JP4954399B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
- Publication number
- JP4954399B2 JP4954399B2 JP2001242319A JP2001242319A JP4954399B2 JP 4954399 B2 JP4954399 B2 JP 4954399B2 JP 2001242319 A JP2001242319 A JP 2001242319A JP 2001242319 A JP2001242319 A JP 2001242319A JP 4954399 B2 JP4954399 B2 JP 4954399B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- memory circuit
- digital video
- liquid crystal
- video signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 61
- 238000003860 storage Methods 0.000 claims description 65
- 230000003068 static effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 103
- 238000000034 method Methods 0.000 description 58
- 239000000758 substrate Substances 0.000 description 49
- 239000010410 layer Substances 0.000 description 46
- 239000012535 impurity Substances 0.000 description 29
- 239000011159 matrix material Substances 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 26
- 238000005530 etching Methods 0.000 description 22
- 238000010586 diagram Methods 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 238000005070 sampling Methods 0.000 description 12
- 239000000565 sealant Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0857—Static memory circuit, e.g. flip-flop
Landscapes
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001242319A JP4954399B2 (ja) | 2000-08-18 | 2001-08-09 | 液晶表示装置 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000249083 | 2000-08-18 | ||
| JP2000-249083 | 2000-08-18 | ||
| JP2000249083 | 2000-08-18 | ||
| JP2001242319A JP4954399B2 (ja) | 2000-08-18 | 2001-08-09 | 液晶表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002132234A JP2002132234A (ja) | 2002-05-09 |
| JP2002132234A5 JP2002132234A5 (enExample) | 2008-09-25 |
| JP4954399B2 true JP4954399B2 (ja) | 2012-06-13 |
Family
ID=26598124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001242319A Expired - Fee Related JP4954399B2 (ja) | 2000-08-18 | 2001-08-09 | 液晶表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4954399B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI277057B (en) | 2000-10-23 | 2007-03-21 | Semiconductor Energy Lab | Display device |
| US6927753B2 (en) | 2000-11-07 | 2005-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP4503250B2 (ja) * | 2002-08-09 | 2010-07-14 | 株式会社半導体エネルギー研究所 | マルチウィンドウ表示装置 |
| EP1388842B1 (en) | 2002-08-09 | 2013-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Multi-window display device and method of driving the same |
| JP2004220021A (ja) * | 2002-12-27 | 2004-08-05 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP5190206B2 (ja) * | 2007-02-08 | 2013-04-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
| CN101527167B (zh) * | 2008-02-01 | 2012-08-15 | 索尼株式会社 | 显示装置 |
| US20120038597A1 (en) * | 2010-08-10 | 2012-02-16 | Coulson Michael P | Pre-programming of in-pixel non-volatile memory |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5912179B2 (ja) * | 1978-06-16 | 1984-03-21 | セイコーエプソン株式会社 | 液晶表示装置 |
| US4996523A (en) * | 1988-10-20 | 1991-02-26 | Eastman Kodak Company | Electroluminescent storage display with improved intensity driver circuits |
| JPH09101761A (ja) * | 1995-10-03 | 1997-04-15 | Casio Comput Co Ltd | El表示装置 |
| JP3485229B2 (ja) * | 1995-11-30 | 2004-01-13 | 株式会社東芝 | 表示装置 |
| JP3980178B2 (ja) * | 1997-08-29 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 不揮発性メモリおよび半導体装置 |
| JP2000200838A (ja) * | 1998-10-30 | 2000-07-18 | Seiko Epson Corp | 半導体記憶装置およびその製造方法 |
| JP2000183187A (ja) * | 1998-12-18 | 2000-06-30 | Sony Corp | 半導体記憶装置およびその製造方法 |
| TW522374B (en) * | 2000-08-08 | 2003-03-01 | Semiconductor Energy Lab | Electro-optical device and driving method of the same |
-
2001
- 2001-08-09 JP JP2001242319A patent/JP4954399B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002132234A (ja) | 2002-05-09 |
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