CN101527167B - 显示装置 - Google Patents
显示装置 Download PDFInfo
- Publication number
- CN101527167B CN101527167B CN2009101307904A CN200910130790A CN101527167B CN 101527167 B CN101527167 B CN 101527167B CN 2009101307904 A CN2009101307904 A CN 2009101307904A CN 200910130790 A CN200910130790 A CN 200910130790A CN 101527167 B CN101527167 B CN 101527167B
- Authority
- CN
- China
- Prior art keywords
- tft
- data
- memory element
- thin film
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010408 film Substances 0.000 claims abstract description 106
- 230000015654 memory Effects 0.000 claims abstract description 98
- 239000010409 thin film Substances 0.000 claims abstract description 45
- 230000008859 change Effects 0.000 claims abstract description 5
- 230000003647 oxidation Effects 0.000 claims description 24
- 238000007254 oxidation reaction Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 238000003860 storage Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 85
- 229910052751 metal Inorganic materials 0.000 description 32
- 239000002184 metal Substances 0.000 description 32
- 239000004973 liquid crystal related substance Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 20
- 229920005591 polysilicon Polymers 0.000 description 20
- 210000002858 crystal cell Anatomy 0.000 description 18
- 230000008569 process Effects 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 11
- 230000009471 action Effects 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 229910002531 CuTe Inorganic materials 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- 230000033228 biological regulation Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 238000007599 discharging Methods 0.000 description 6
- 230000006386 memory function Effects 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 101100492689 Arabidopsis thaliana ATE2 gene Proteins 0.000 description 2
- 102100039995 Arginyl-tRNA-protein transferase 1 Human genes 0.000 description 2
- 101000886906 Homo sapiens Arginyl-tRNA-protein transferase 1 Proteins 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 2
- 241001494908 Akihito Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
Landscapes
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008022900 | 2008-02-01 | ||
JP022900/08 | 2008-02-01 | ||
JP2008310441A JP4596070B2 (ja) | 2008-02-01 | 2008-12-05 | メモリ素子及びメモリ素子の製造方法、並びに表示装置及び表示装置の製造方法 |
JP310441/08 | 2008-12-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101527167A CN101527167A (zh) | 2009-09-09 |
CN101527167B true CN101527167B (zh) | 2012-08-15 |
Family
ID=41094992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101307904A Expired - Fee Related CN101527167B (zh) | 2008-02-01 | 2009-02-01 | 显示装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5107395B2 (zh) |
CN (1) | CN101527167B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10892010B2 (en) * | 2019-02-13 | 2021-01-12 | Macronix International Co., Ltd. | Method for controlling accumulated resistance property of ReRAM device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1368763A (zh) * | 2001-02-02 | 2002-09-11 | 索尼公司 | 一次可编程半导体非易失性存储器件及其制造方法 |
CN1551240A (zh) * | 2003-03-06 | 2004-12-01 | ������������ʽ���� | 非易失性半导体存储装置 |
CN1573844A (zh) * | 2003-06-19 | 2005-02-02 | 株式会社日立制作所 | 图像显示装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW522374B (en) * | 2000-08-08 | 2003-03-01 | Semiconductor Energy Lab | Electro-optical device and driving method of the same |
JP4954399B2 (ja) * | 2000-08-18 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP3767737B2 (ja) * | 2001-10-25 | 2006-04-19 | シャープ株式会社 | 表示素子およびその階調駆動方法 |
JP4119198B2 (ja) * | 2002-08-09 | 2008-07-16 | 株式会社日立製作所 | 画像表示装置および画像表示モジュール |
KR100738070B1 (ko) * | 2004-11-06 | 2007-07-12 | 삼성전자주식회사 | 한 개의 저항체와 한 개의 트랜지스터를 지닌 비휘발성메모리 소자 |
JP4552745B2 (ja) * | 2005-05-10 | 2010-09-29 | ソニー株式会社 | 記憶素子及びその製造方法 |
JP2007115956A (ja) * | 2005-10-21 | 2007-05-10 | Toshiba Corp | 半導体記憶装置 |
-
2009
- 2009-02-01 CN CN2009101307904A patent/CN101527167B/zh not_active Expired - Fee Related
-
2010
- 2010-07-02 JP JP2010151832A patent/JP5107395B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1368763A (zh) * | 2001-02-02 | 2002-09-11 | 索尼公司 | 一次可编程半导体非易失性存储器件及其制造方法 |
CN1551240A (zh) * | 2003-03-06 | 2004-12-01 | ������������ʽ���� | 非易失性半导体存储装置 |
CN1573844A (zh) * | 2003-06-19 | 2005-02-02 | 株式会社日立制作所 | 图像显示装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2010277092A (ja) | 2010-12-09 |
CN101527167A (zh) | 2009-09-09 |
JP5107395B2 (ja) | 2012-12-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8115188B2 (en) | Memory element and display device | |
JP4524699B2 (ja) | 表示装置 | |
CN1573844B (zh) | 图像显示装置 | |
CA1248251A (en) | Active display matrix addressable without crossed lines on any one substrate and method of using the same | |
CN100363829C (zh) | 显示装置 | |
JP2011170332A (ja) | 液晶表示装置の駆動方法 | |
JP2011170333A (ja) | 液晶表示装置の駆動方法 | |
JP3982992B2 (ja) | アクティブマトリクス型表示装置 | |
CN101527167B (zh) | 显示装置 | |
JP4644758B2 (ja) | 画素のアレイを有しデータの記憶が可能な表示装置 | |
KR20020081421A (ko) | 능동 매트릭스 일렉트로크로믹 디스플레이 디바이스 | |
US6650465B2 (en) | Light-switching device | |
JP2004045662A (ja) | 表示装置およびその駆動方法 | |
US8665385B2 (en) | Capacitive coupled non-volatile electronic display | |
US6654154B2 (en) | Light switching device with reset |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NIPPON DISPLAY CO., LTD. Free format text: FORMER OWNER: SONY CORPORATION Effective date: 20121122 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121122 Address after: Aichi Prefecture, Japan Patentee after: Japan display West Co.,Ltd. Address before: Tokyo, Japan Patentee before: Sony Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211021 Address after: Tokyo, Japan Patentee after: JAPAN DISPLAY Inc. Address before: Aichi Prefecture, Japan Patentee before: Japan display West Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120815 Termination date: 20220201 |
|
CF01 | Termination of patent right due to non-payment of annual fee |