JP4954387B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4954387B2 JP4954387B2 JP2001160197A JP2001160197A JP4954387B2 JP 4954387 B2 JP4954387 B2 JP 4954387B2 JP 2001160197 A JP2001160197 A JP 2001160197A JP 2001160197 A JP2001160197 A JP 2001160197A JP 4954387 B2 JP4954387 B2 JP 4954387B2
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- conductive layer
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- 239000011159 matrix material Substances 0.000 description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
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- 239000011810 insulating material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001160197A JP4954387B2 (ja) | 2000-05-29 | 2001-05-29 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000159251 | 2000-05-29 | ||
| JP2000159251 | 2000-05-29 | ||
| JP2000-159251 | 2000-05-29 | ||
| JP2001160197A JP4954387B2 (ja) | 2000-05-29 | 2001-05-29 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002057165A JP2002057165A (ja) | 2002-02-22 |
| JP2002057165A5 JP2002057165A5 (enrdf_load_stackoverflow) | 2008-07-10 |
| JP4954387B2 true JP4954387B2 (ja) | 2012-06-13 |
Family
ID=26592845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001160197A Expired - Lifetime JP4954387B2 (ja) | 2000-05-29 | 2001-05-29 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4954387B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4869509B2 (ja) | 2001-07-17 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4537029B2 (ja) * | 2003-09-30 | 2010-09-01 | シャープ株式会社 | 薄膜トランジスタ装置及びその製造方法、並びにそれを備えた薄膜トランジスタ基板及び表示装置 |
| TWI685116B (zh) * | 2014-02-07 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3645100B2 (ja) * | 1992-06-24 | 2005-05-11 | セイコーエプソン株式会社 | 相補型回路、周辺回路、アクティブマトリックス基板及び電子機器 |
| JPH0955508A (ja) * | 1995-08-10 | 1997-02-25 | Sanyo Electric Co Ltd | 薄膜トランジスタ及びその製造方法 |
| JPH1145999A (ja) * | 1997-07-24 | 1999-02-16 | Hitachi Ltd | 半導体装置およびその製造方法ならびに画像表示装置 |
| JPH11261075A (ja) * | 1998-03-13 | 1999-09-24 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
-
2001
- 2001-05-29 JP JP2001160197A patent/JP4954387B2/ja not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| JP2002057165A (ja) | 2002-02-22 |
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