JP4950201B2 - 移動式金型洗浄装置及び金型洗浄方法 - Google Patents
移動式金型洗浄装置及び金型洗浄方法 Download PDFInfo
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- JP4950201B2 JP4950201B2 JP2008529914A JP2008529914A JP4950201B2 JP 4950201 B2 JP4950201 B2 JP 4950201B2 JP 2008529914 A JP2008529914 A JP 2008529914A JP 2008529914 A JP2008529914 A JP 2008529914A JP 4950201 B2 JP4950201 B2 JP 4950201B2
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- Prior art keywords
- mold
- frame
- plasma
- cleaning
- cleaning apparatus
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- 238000004140 cleaning Methods 0.000 title claims description 58
- 238000000034 method Methods 0.000 title claims description 21
- 238000000465 moulding Methods 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 238000012856 packing Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32348—Dielectric barrier discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Cleaning In General (AREA)
Description
上記実施例の説明では、反応チャンバCを形成するフレームが本体フレームとアタッチフレームとに分離されるものとして説明されたが、これは、1つの実施例であり、ボックス型からなる本体フレームだけが反応チャンバ形成のために用いられることができる。
12 本体フレーム
14 アタッチフレーム
20 活性電極
30 電源
40 真空ポンプ
2 金型
2a キャビティ
Claims (8)
- プラズマ放電を利用して金型の表面を洗浄する装置であって、
下部開放型からなり、前記金型上に載置される時、前記金型表面に対向する反応チャンバを前記金型表面との間に形成するフレームと、
前記金型が電気的に接地された状態でこれと対向する位置に設けられ、外部電源から電力を印加されて前記反応チャンバ内にプラズマを形成する活性電極と、を含み、
前記フレームは、
前記活性電極が設けられるボックス型の本体フレームと、
上部が前記本体フレームに、下部が前記金型表面にそれぞれ密着され、多様な規格の金型に対応して交換装着可能な額縁型のアタッチフレームと、
で構成されることを特徴とするプラズマを利用した移動式金型洗浄装置。 - 前記アタッチフレームは、前記金型表面と当接する部分に密封パッキングを具備することを特徴とする請求項1に記載のプラズマを利用した移動式金型洗浄装置。
- 前記アタッチフレームと前記本体フレームが当接する部分には、密封パッキングが設けられることを特徴とする請求項1に記載のプラズマを利用した移動式金型洗浄装置。
- 前記反応チャンバ内の圧力を制御するための真空ポンプをさらに含むことを特徴とする請求項1に記載の移動式金型洗浄装置。
- 前記活性電極を大気圧プラズマ放電のための誘電体を具備することを特徴とする請求項1に記載の移動式金型洗浄装置。
- 前記金型は、半導体に対する樹脂成形のための多数のキャビティが形成されるものであることを特徴とする請求項1−5のいずれか一項に記載のプラズマを用いた移動式金型洗浄装置。
- 金型表面の洗浄のために、前記金型上に載置され、活性電極が設けられる本体フレームと、上部が前記本体フレームに、下部が前記金型表面にそれぞれ密着され、多様な規格の金型に対応して交換装着可能なアタッチフレームと、を含む移動式金型洗浄装置を利用する金型洗浄方法であって、
前記アタッチフレームを金型上に載置し、その上に前記本体フレームを載置して前記金型の表面上に反応チャンバを形成するチャンバ形成過程と、
前記反応チャンバ内にプラズマを形成し、このプラズマで金型表面を洗浄する洗浄過程と、
を含むことを特徴とする金型洗浄方法。 - 前記洗浄過程では、前記金型を電気的に接地させ、前記反応チャンバ内において前記活性電極に放電用電力を印加することを特徴とする請求項7に記載の金型洗浄方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0082569 | 2005-09-06 | ||
KR1020050082569A KR100729464B1 (ko) | 2005-09-06 | 2005-09-06 | 이동식 금형 세정장치 및 금형 세정방법 |
PCT/KR2006/003505 WO2007029949A1 (en) | 2005-09-06 | 2006-09-05 | Portable die cleaning apparatus and method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009506915A JP2009506915A (ja) | 2009-02-19 |
JP4950201B2 true JP4950201B2 (ja) | 2012-06-13 |
Family
ID=37836032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008529914A Expired - Fee Related JP4950201B2 (ja) | 2005-09-06 | 2006-09-05 | 移動式金型洗浄装置及び金型洗浄方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080308121A1 (ja) |
EP (1) | EP1922744A4 (ja) |
JP (1) | JP4950201B2 (ja) |
KR (1) | KR100729464B1 (ja) |
CN (1) | CN101258579B (ja) |
WO (1) | WO2007029949A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100863317B1 (ko) * | 2007-03-26 | 2008-10-15 | 미크론정공 주식회사 | 플라즈마 세정 장치 |
KR100945894B1 (ko) * | 2008-01-09 | 2010-03-05 | 주식회사 피에스엠 | 수지 몰딩 장비의 인라인 금형 장치 |
KR100984842B1 (ko) * | 2008-05-13 | 2010-10-01 | 미크론정공 주식회사 | 자동 몰딩 및 세정 장치 |
KR100945895B1 (ko) * | 2008-05-21 | 2010-03-05 | 주식회사 피에스엠 | 반도체 몰딩 장비의 인라인 금형 세정장치 및 방법 |
KR100907700B1 (ko) | 2008-05-21 | 2009-07-14 | 주식회사 피에스엠 | 플라즈마를 이용하는 양방향 세정모듈 및 양방향 금형세정방법 |
KR101024612B1 (ko) * | 2008-12-31 | 2011-03-25 | 미크론정공 주식회사 | 플라즈마 몰드 세정장치 |
JP5970416B2 (ja) * | 2013-05-21 | 2016-08-17 | Towa株式会社 | 成形型用の大気圧プラズマ処理装置及び処理方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4657616A (en) * | 1985-05-17 | 1987-04-14 | Benzing Technologies, Inc. | In-situ CVD chamber cleaner |
JP3279305B2 (ja) * | 1995-11-02 | 2002-04-30 | 松下電器産業株式会社 | 型締装置のクリーニング装置およびクリーニング方法 |
JPH10202669A (ja) | 1997-01-21 | 1998-08-04 | Nec Kansai Ltd | 樹脂モールド装置 |
JPH11286023A (ja) * | 1998-04-03 | 1999-10-19 | Ulvac Corp | プラズマクリーニング方法及びプラズマクリーニング装置 |
JP3674339B2 (ja) | 1998-10-12 | 2005-07-20 | 松下電器産業株式会社 | 樹脂成型用金型のクリーニング装置およびクリーニング方法 |
JP2000117750A (ja) | 1998-10-12 | 2000-04-25 | Matsushita Electric Ind Co Ltd | 樹脂成型用金型のクリーニング装置およびクリーニング方法 |
JP3562354B2 (ja) | 1998-12-09 | 2004-09-08 | 松下電器産業株式会社 | 樹脂成型用金型のクリーニング装置およびクリーニング方法 |
JP2001293729A (ja) * | 2000-04-17 | 2001-10-23 | Yokohama Rubber Co Ltd:The | タイヤ加硫成形用金型の洗浄方法 |
JP3498693B2 (ja) * | 2000-09-08 | 2004-02-16 | 松下電器産業株式会社 | チップの実装方法及びチップの実装体 |
GB0025307D0 (en) * | 2000-10-16 | 2000-11-29 | Celltech Chiroscience Ltd | Biological products |
JP4273382B2 (ja) * | 2000-12-18 | 2009-06-03 | 富士電機システムズ株式会社 | プラズマ処理装置と薄膜形成方法 |
JP4090005B2 (ja) * | 2001-04-18 | 2008-05-28 | Towa株式会社 | クリーニング方法 |
JP2003168596A (ja) * | 2001-11-29 | 2003-06-13 | Sekisui Chem Co Ltd | 放電プラズマ電極及びそれを用いた放電プラズマ処理装置 |
DE10211976A1 (de) * | 2002-03-19 | 2003-10-02 | Bosch Gmbh Robert | Verfahren und Vorrichtung zumindest zur Sterilisation von Behältnissen und/oder deren Verschließelementen |
JP2003334436A (ja) * | 2002-05-17 | 2003-11-25 | Konica Minolta Holdings Inc | 多孔性プラズマ放電用電極、大気圧プラズマ放電処理装置、薄膜形成方法及び高機能性フィルム |
-
2005
- 2005-09-06 KR KR1020050082569A patent/KR100729464B1/ko not_active IP Right Cessation
-
2006
- 2006-09-05 US US12/064,015 patent/US20080308121A1/en not_active Abandoned
- 2006-09-05 JP JP2008529914A patent/JP4950201B2/ja not_active Expired - Fee Related
- 2006-09-05 CN CN2006800323251A patent/CN101258579B/zh not_active Expired - Fee Related
- 2006-09-05 EP EP06798650A patent/EP1922744A4/en not_active Withdrawn
- 2006-09-05 WO PCT/KR2006/003505 patent/WO2007029949A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN101258579B (zh) | 2011-08-31 |
EP1922744A4 (en) | 2010-10-20 |
KR100729464B1 (ko) | 2007-06-15 |
JP2009506915A (ja) | 2009-02-19 |
EP1922744A1 (en) | 2008-05-21 |
WO2007029949A1 (en) | 2007-03-15 |
US20080308121A1 (en) | 2008-12-18 |
CN101258579A (zh) | 2008-09-03 |
KR20070027192A (ko) | 2007-03-09 |
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