JP4945704B2 - 磁気トンネル接合素子 - Google Patents
磁気トンネル接合素子 Download PDFInfo
- Publication number
- JP4945704B2 JP4945704B2 JP2011552644A JP2011552644A JP4945704B2 JP 4945704 B2 JP4945704 B2 JP 4945704B2 JP 2011552644 A JP2011552644 A JP 2011552644A JP 2011552644 A JP2011552644 A JP 2011552644A JP 4945704 B2 JP4945704 B2 JP 4945704B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- fluorine
- insulator layer
- ferromagnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Measuring Magnetic Variables (AREA)
Description
図2に、実施例において作製した本発明の磁気トンネル接合素子2の構成を示す。図2には、さらに、当該素子2の電気抵抗値(磁気抵抗)を測定するための機構であるデジタルボルトメーター11および定電流源12が示されている。
磁気トンネル接合素子2は、以下のように作製した。
基板101は、以下の手順に従って準備した。
次に、基板101上に、配線電極404/反強磁性体層405/第1の強磁性体層401として、金属多層膜Ta/Cu/Ta/PtMn/Co90Fe10/Ru/Co40Fe40B20を以下の手順で形成した。
Ta膜:圧力0.8PaのAr雰囲気、金属Taターゲット、RFコイル出力5W、RFカソード出力65W;
PtMn膜:圧力1.01PaのAr雰囲気、PtMnターゲット、DCカソード電圧450V;
Co90Fe10膜:圧力0.8PaのAr雰囲気、Co90Fe10ターゲット、DCカソード電圧400V;
Ru膜:圧力0.8PaのAr雰囲気、DCカソード電圧380V;
Co40Fe40B20膜:圧力0.8PaのAr雰囲気、Co40Fe40B20ターゲット、RFコイル出力50W、DCカソード電圧400V。
次に、Co40Fe40B20膜を形成したチャンバーと同じチャンバーを用いて、当該膜上に、絶縁体層402を形成した。以下、図3を参照しながら、フッ素量を制御したMgO絶縁体層(トンネルバリア)402の形成を説明する。
次に、絶縁体層402を形成したチャンバーと同じチャンバーを用いて、当該層上に、第2の強磁性体層403(厚さ5nmのCo40Fe40B20膜)および配線電極406の一部である厚さ5nmのTa膜を、順に形成した。
上述した磁気トンネル接合素子2の作製と同じ手法を用いて、別途、絶縁体層402を形成し、絶縁体層402を形成する成膜条件と、絶縁体層に添加されるフッ素量との関係を評価した。
上記のように作製した磁気トンネル接合素子2に対して、磁気抵抗変化率(MR比)を評価する前に、圧力10-5Paの真空下、5kOe(エルステッド)の磁場中で1時間の熱処理(磁場中熱処理)を行い、当該素子が備える反強磁性体層405に磁気異方性を付与した。熱処理は、280℃、300〜305℃および323〜327℃の3つの温度条件で、それぞれ実施した。
磁気トンネル接合素子をセンサー素子として使用する際には、当該素子に対してバイアス電圧が印加される。このため、バイアス電圧を変化させたときに素子が示す磁気抵抗変化特性の評価が重要である。図10に、参照試料ならびにMR試料A,C,Dに対して、バイアス電圧(測定バイアス電圧)を±100mVの範囲で変化させたときの、各素子が示すMR比の変化を示す。図10の縦軸は、バイアス電圧を変化させたときに素子が示す規格化されたMR比を示し、横軸は、素子に印加したバイアス電圧を示す。MR比の規格化は、バイアス電圧を変化させたときに素子が示す最大のMR比を1として行った。規格化により、バイアス電圧の影響について素子間の比較が容易となる。
J. H. Kwon et al., “Effect of F-inclusion in nm-thick MgO tunnel barrier”, Current Applied Physics, vol. 9 (2009), pp. 788-791には、改質(modified)MgOトンネルバリアに対するフッ素の添加量が開示されていない。これに加えて、当該文献には、改質MgOトンネルバリアを磁気トンネル接合素子に適用した場合に、当該素子が示す磁気抵抗変化率への改質の効果が開示されていない。そこで、Kwon et alの技術と、本発明との差異を明確にするために、本発明の磁気トンネル接合素子における絶縁体層のバリア高さを、以下の手順で評価した。
Claims (5)
- 第1の強磁性体層と、
第2の強磁性体層と、
前記第1の強磁性体層および前記第2の強磁性体層の間に形成された絶縁体層と、を備え、
前記絶縁体層は、フッ素が添加されたMgOにより構成され、
前記絶縁体層におけるフッ素の添加量が、0.00487atm%以上0.15080atm%以下である、磁気トンネル接合素子。 - 前記フッ素の添加量が、0.00487atm%以上0.05256atm%以下である請求項1に記載の磁気トンネル接合素子。
- 前記第1の強磁性体層および前記第2の強磁性体層から選ばれる少なくとも1つの層が、Co−Fe−B合金により構成される請求項1に記載の磁気トンネル接合素子。
- 前記第1の強磁性体層が、式{Co(1-x)Fex}0.8B0.2で示されるCo−Fe−B合金により構成される請求項3に記載の磁気トンネル接合素子。ここで、xは、式0.25≦x≦0.5を満たす数値である。
- 前記第2の強磁性体層が、式{Co(1-y)Fey}0.8B0.2で示されるCo−Fe−B合金により構成される請求項3に記載の磁気トンネル接合素子。ここで、yは、式0.25≦x≦0.5を満たす数値である。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011552644A JP4945704B2 (ja) | 2010-08-17 | 2011-08-04 | 磁気トンネル接合素子 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010182028 | 2010-08-17 | ||
JP2010182028 | 2010-08-17 | ||
JP2011552644A JP4945704B2 (ja) | 2010-08-17 | 2011-08-04 | 磁気トンネル接合素子 |
PCT/JP2011/004435 WO2012023252A1 (ja) | 2010-08-17 | 2011-08-04 | 磁気トンネル接合素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4945704B2 true JP4945704B2 (ja) | 2012-06-06 |
JPWO2012023252A1 JPWO2012023252A1 (ja) | 2013-10-28 |
Family
ID=45604923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011552644A Expired - Fee Related JP4945704B2 (ja) | 2010-08-17 | 2011-08-04 | 磁気トンネル接合素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8330241B2 (ja) |
JP (1) | JP4945704B2 (ja) |
CN (1) | CN102792478B (ja) |
WO (1) | WO2012023252A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103650120A (zh) * | 2011-07-11 | 2014-03-19 | 松下电器产业株式会社 | 膜结构体及其制造方法 |
US9136464B1 (en) * | 2012-09-25 | 2015-09-15 | Everspin Technologies, Inc. | Apparatus and process for manufacturing ST-MRAM having a metal oxide tunnel barrier |
US9070868B2 (en) * | 2013-06-04 | 2015-06-30 | International Business Machines Corporation | Thermally assisted MRAM with a multilayer encapsulant for low thermal conductivity |
CN103792501B (zh) * | 2014-01-22 | 2016-03-30 | 中国人民解放军国防科学技术大学 | 一种桥接式石墨烯基磁传感器 |
DE112017000726B4 (de) * | 2017-09-21 | 2023-06-29 | Hitachi High-Tech Corporation | Verfahren zur Herstellung eines magnetischen Tunnelübergangselements und induktiv gekoppelte Plasmabearbeitungsvorrichtung |
US11997931B2 (en) | 2018-10-31 | 2024-05-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bar-type magnetoresistive random access memory cell |
JP2020155565A (ja) * | 2019-03-20 | 2020-09-24 | キオクシア株式会社 | 磁気記憶装置 |
US20220013579A1 (en) * | 2019-03-20 | 2022-01-13 | Kioxia Corporation | Magnetic memory device |
JP7107330B2 (ja) * | 2020-03-27 | 2022-07-27 | Tdk株式会社 | 磁気センサおよびその製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002057381A (ja) * | 2000-08-08 | 2002-02-22 | Res Inst Electric Magnetic Alloys | トンネル接合膜 |
JP2004079632A (ja) * | 2002-08-12 | 2004-03-11 | Toshiba Corp | 半導体集積回路装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6611405B1 (en) * | 1999-09-16 | 2003-08-26 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory device |
JP2001156357A (ja) | 1999-09-16 | 2001-06-08 | Toshiba Corp | 磁気抵抗効果素子および磁気記録素子 |
JP5096702B2 (ja) * | 2005-07-28 | 2012-12-12 | 株式会社日立製作所 | 磁気抵抗効果素子及びそれを搭載した不揮発性磁気メモリ |
-
2011
- 2011-08-04 WO PCT/JP2011/004435 patent/WO2012023252A1/ja active Application Filing
- 2011-08-04 CN CN201180011721.7A patent/CN102792478B/zh not_active Expired - Fee Related
- 2011-08-04 JP JP2011552644A patent/JP4945704B2/ja not_active Expired - Fee Related
-
2012
- 2012-04-24 US US13/454,696 patent/US8330241B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002057381A (ja) * | 2000-08-08 | 2002-02-22 | Res Inst Electric Magnetic Alloys | トンネル接合膜 |
JP2004079632A (ja) * | 2002-08-12 | 2004-03-11 | Toshiba Corp | 半導体集積回路装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2012023252A1 (ja) | 2012-02-23 |
US20120205762A1 (en) | 2012-08-16 |
US8330241B2 (en) | 2012-12-11 |
CN102792478B (zh) | 2014-09-03 |
CN102792478A (zh) | 2012-11-21 |
JPWO2012023252A1 (ja) | 2013-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4945704B2 (ja) | 磁気トンネル接合素子 | |
US10230044B2 (en) | Fully compensated synthetic ferromagnet for spintronics applications | |
US7672088B2 (en) | Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications | |
EP3382767A1 (en) | Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory | |
TW556233B (en) | Magnetoresistive element | |
WO2018186971A1 (en) | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | |
JPWO2003090290A1 (ja) | 磁気抵抗効果素子とこれを用いた磁気ヘッドおよび磁気メモリならびに磁気記録装置 | |
US20040032318A1 (en) | Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film | |
JP2004200245A (ja) | 磁気抵抗素子及び磁気抵抗素子の製造方法 | |
EP2673807A2 (en) | Magnetic element with improved out-of-plane anisotropy for spintronic applications | |
WO2018213223A1 (en) | Multilayer structure for reducing film roughness in magnetic devices | |
JP6857421B2 (ja) | 強磁性トンネル接合体、それを用いたスピントロニクスデバイス、及び強磁性トンネル接合体の製造方法 | |
US11121310B2 (en) | Spin electronics element and method of manufacturing thereof | |
JP3954615B2 (ja) | 磁気抵抗素子 | |
JP2004179668A (ja) | 磁気抵抗素子 | |
JP2008034784A (ja) | トンネル型磁気検出素子及びその製造方法 | |
JP4909327B2 (ja) | 磁気抵抗膜ならびに磁気抵抗膜を用いた磁気記録用磁気ヘッド、磁気センサ及び磁気メモリー | |
JP3496215B2 (ja) | 強磁性トンネル接合素子の製造方法 | |
JP2002289947A (ja) | 交換結合素子及び交換結合素子の製造方法 | |
US20040229082A1 (en) | Magnetoresistance device | |
WO2004109820A1 (en) | MAGNETIC TUNNEL JUNCTIONS INCORPORATING AMORPHOUS CoNbZr ALLOYS AND NANO-OXIDE LAYERS | |
JP2002171011A (ja) | 磁気抵抗効果素子及びその製造方法並びに磁気抵抗効果センサ | |
JP2003069112A (ja) | 強磁性トンネル接合素子の製造方法 | |
KR100440530B1 (ko) | 이중 산화 절연층 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120214 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120305 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4945704 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150309 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |