JP4944200B2 - 少なくとも一つの多層体の製造プロセスと多層体 - Google Patents

少なくとも一つの多層体の製造プロセスと多層体 Download PDF

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JP4944200B2
JP4944200B2 JP2009523184A JP2009523184A JP4944200B2 JP 4944200 B2 JP4944200 B2 JP 4944200B2 JP 2009523184 A JP2009523184 A JP 2009523184A JP 2009523184 A JP2009523184 A JP 2009523184A JP 4944200 B2 JP4944200 B2 JP 4944200B2
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exposure
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JP2010500606A (ja
JP2010500606A5 (enExample
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ゲールノート シュナイデル
ルネ シュタウプ
ウェイン ロバート トンプキン
アヒム ハンセン
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オーファウデー キネグラム アーゲー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009523184A 2006-08-09 2007-08-03 少なくとも一つの多層体の製造プロセスと多層体 Expired - Fee Related JP4944200B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006037433.9 2006-08-09
DE102006037433A DE102006037433B4 (de) 2006-08-09 2006-08-09 Verfahren zur Herstellung eines Mehrschichtkörpers sowie Mehrschichtkörper
PCT/EP2007/006884 WO2008017426A1 (de) 2006-08-09 2007-08-03 Verfahren zur herstellung mindestens eines mehrschichtkörpers sowie mehrschichtkörper

Publications (3)

Publication Number Publication Date
JP2010500606A JP2010500606A (ja) 2010-01-07
JP2010500606A5 JP2010500606A5 (enExample) 2010-09-09
JP4944200B2 true JP4944200B2 (ja) 2012-05-30

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JP2009523184A Expired - Fee Related JP4944200B2 (ja) 2006-08-09 2007-08-03 少なくとも一つの多層体の製造プロセスと多層体

Country Status (6)

Country Link
US (2) US8129217B2 (enExample)
EP (1) EP2050150B1 (enExample)
JP (1) JP4944200B2 (enExample)
DE (1) DE102006037433B4 (enExample)
DK (1) DK2050150T3 (enExample)
WO (1) WO2008017426A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2650907B1 (en) 2004-06-04 2024-10-23 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
WO2008036837A2 (en) * 2006-09-20 2008-03-27 The Board Of Trustees Of The University Of Illinois Release strategies for making transferable semiconductor structures, devices and device components
MY149292A (en) 2007-01-17 2013-08-30 Univ Illinois Optical systems fabricated by printing-based assembly
EP2349440B1 (en) 2008-10-07 2019-08-21 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
WO2010111798A1 (en) 2009-03-30 2010-10-07 Boegli-Gravures S.A. Method and device for structuring a solid body surface with a hard coating with a first laser with pulses in the nanosecond field and a second laser with pulses in the pico- or femtosecond field
ES2541834T3 (es) * 2009-03-30 2015-07-27 Boegli-Gravures S.A. Procedimiento y dispositivo para estructurar una superficie de cuerpo sólido con un revestimiento duro con un láser que utilizan máscara y diafragma
WO2010132552A1 (en) 2009-05-12 2010-11-18 The Board Of Trustees Of The University Of Illinois Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
WO2011041727A1 (en) 2009-10-01 2011-04-07 Mc10, Inc. Protective cases with integrated electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
EP2513953B1 (en) 2009-12-16 2017-10-18 The Board of Trustees of the University of Illionis Electrophysiology using conformal electronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
JP5751728B2 (ja) 2010-03-17 2015-07-22 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 生体吸収性基板上の埋め込み型バイオメディカルデバイス
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
CN103348503A (zh) * 2011-03-03 2013-10-09 正交公司 薄膜器件的材料图案化工艺
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing
KR102000302B1 (ko) 2011-05-27 2019-07-15 엠씨10, 인크 전자, 광학, 및/또는 기계 장치 및 시스템, 그리고 이를 제조하기 위한 방법
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
CN104472023B (zh) 2011-12-01 2018-03-27 伊利诺伊大学评议会 经设计以经历可编程转变的瞬态器件
CN105283122B (zh) 2012-03-30 2020-02-18 伊利诺伊大学评议会 可共形于表面的可安装于附肢的电子器件
DE102012108170B4 (de) * 2012-09-03 2015-01-22 Bundesdruckerei Gmbh Sicherheitselement und Verfahren zur Herstellung eines Sicherheitselements
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
KR20180034342A (ko) 2015-06-01 2018-04-04 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 대안적인 자외선 감지방법
EP3304430A4 (en) 2015-06-01 2019-03-06 The Board of Trustees of the University of Illionis MINIATURIZED ELECTRONIC SYSTEMS WITH WIRELESS AND CLOSE COMMUNICATION CAPABILITIES
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
EP3985715A4 (en) * 2020-06-01 2022-11-09 Changxin Memory Technologies, Inc. Design method for wafer layout and lithography machine exposure system

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829213A (en) * 1972-06-02 1974-08-13 Mos Technology Inc Artproof method for semiconductor devices
US4374911A (en) * 1978-04-28 1983-02-22 International Business Machines Corporation Photo method of making tri-level density photomask
GB9404675D0 (en) * 1994-03-11 1994-04-27 Dow Corning Sa Foils
US5932397A (en) * 1996-05-28 1999-08-03 Rvm Scientific, Inc. Multicolor lithography for control of three dimensional refractive index gradient processing
US6133933A (en) * 1997-01-13 2000-10-17 Xerox Corporation Color Xerographic printing system with multicolor printbar
US6255130B1 (en) * 1998-11-19 2001-07-03 Samsung Electronics Co., Ltd. Thin film transistor array panel and a method for manufacturing the same
CA2389347A1 (en) * 1999-12-02 2001-06-07 Tony C. Kowalczyk Photodefinition of optical devices
US6569580B2 (en) * 2001-03-13 2003-05-27 Diverging Technologies, Inc. Binary and phase-shift photomasks
US20020195928A1 (en) * 2001-06-25 2002-12-26 Grace Anthony J. Electroluminescent display device and method of making
US7160649B2 (en) * 2002-07-11 2007-01-09 Hitachi Via Mechanics, Ltd. Gray level imaging masks, optical imaging apparatus for gray level imaging masks and methods for encoding mask and use of the masks
ATE358895T1 (de) * 2003-03-07 2007-04-15 Koninkl Philips Electronics Nv Verfahren zur herstellung einer elektronischen anordung
JP3746497B2 (ja) * 2003-06-24 2006-02-15 松下電器産業株式会社 フォトマスク
DE10349963A1 (de) * 2003-10-24 2005-06-02 Leonhard Kurz Gmbh & Co. Kg Verfahren zur Herstellung einer Folie
DE102004059467A1 (de) * 2004-12-10 2006-07-20 Polyic Gmbh & Co. Kg Gatter aus organischen Feldeffekttransistoren
DE102004059798A1 (de) * 2004-12-10 2006-06-29 Ovd Kinegram Ag Optisch variables Element mit elektrisch aktiver Schicht
JP4769544B2 (ja) * 2005-10-28 2011-09-07 Ｈｏｙａ株式会社 二次鋳型の製造方法
US8906490B2 (en) * 2006-05-19 2014-12-09 Eastman Kodak Company Multicolor mask

Also Published As

Publication number Publication date
US8502213B2 (en) 2013-08-06
US20090289246A1 (en) 2009-11-26
EP2050150B1 (de) 2013-04-24
JP2010500606A (ja) 2010-01-07
DE102006037433A1 (de) 2008-02-28
US8129217B2 (en) 2012-03-06
US20120164391A1 (en) 2012-06-28
WO2008017426A1 (de) 2008-02-14
DE102006037433B4 (de) 2010-08-19
DK2050150T3 (da) 2013-07-22
EP2050150A1 (de) 2009-04-22

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