JP4936928B2 - 成膜方法および成膜装置、ならびに記憶媒体 - Google Patents

成膜方法および成膜装置、ならびに記憶媒体 Download PDF

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Publication number
JP4936928B2
JP4936928B2 JP2007043910A JP2007043910A JP4936928B2 JP 4936928 B2 JP4936928 B2 JP 4936928B2 JP 2007043910 A JP2007043910 A JP 2007043910A JP 2007043910 A JP2007043910 A JP 2007043910A JP 4936928 B2 JP4936928 B2 JP 4936928B2
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Japan
Prior art keywords
gas
film
substrate
film forming
carboxylate
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JP2007043910A
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English (en)
Japanese (ja)
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JP2007332453A (ja
JP2007332453A5 (enExample
Inventor
秀典 三好
勲男 軍司
仁 伊藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2007043910A priority Critical patent/JP4936928B2/ja
Priority to US11/747,647 priority patent/US8029856B2/en
Publication of JP2007332453A publication Critical patent/JP2007332453A/ja
Publication of JP2007332453A5 publication Critical patent/JP2007332453A5/ja
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Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007043910A 2006-05-16 2007-02-23 成膜方法および成膜装置、ならびに記憶媒体 Expired - Fee Related JP4936928B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007043910A JP4936928B2 (ja) 2006-05-16 2007-02-23 成膜方法および成膜装置、ならびに記憶媒体
US11/747,647 US8029856B2 (en) 2006-05-16 2007-05-11 Film formation method and apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006136657 2006-05-16
JP2006136657 2006-05-16
JP2007043910A JP4936928B2 (ja) 2006-05-16 2007-02-23 成膜方法および成膜装置、ならびに記憶媒体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012019498A Division JP5436589B2 (ja) 2006-05-16 2012-02-01 成膜装置

Publications (3)

Publication Number Publication Date
JP2007332453A JP2007332453A (ja) 2007-12-27
JP2007332453A5 JP2007332453A5 (enExample) 2010-03-18
JP4936928B2 true JP4936928B2 (ja) 2012-05-23

Family

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Family Applications (1)

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JP2007043910A Expired - Fee Related JP4936928B2 (ja) 2006-05-16 2007-02-23 成膜方法および成膜装置、ならびに記憶媒体

Country Status (2)

Country Link
US (1) US8029856B2 (enExample)
JP (1) JP4936928B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4964097B2 (ja) * 2007-11-15 2012-06-27 東京エレクトロン株式会社 成膜方法および成膜装置、ならびに記憶媒体
JP5145052B2 (ja) * 2008-01-07 2013-02-13 東京エレクトロン株式会社 成膜方法および成膜装置、ならびに記憶媒体
US8940173B2 (en) * 2008-05-29 2015-01-27 Lawrence Livermore National Security, Llc Membranes with functionalized carbon nanotube pores for selective transport
JP5281856B2 (ja) * 2008-09-16 2013-09-04 東京エレクトロン株式会社 成膜方法および成膜装置、ならびに記憶媒体
CN101768730B (zh) * 2009-01-05 2013-06-05 鸿富锦精密工业（深圳）有限公司 一种薄膜制备装置
US9457406B2 (en) * 2009-09-16 2016-10-04 Hitachi Chemical Company, Ltd. Copper metal film, method for producing same, copper metal pattern, conductive wiring line using the copper metal pattern, copper metal bump, heat conduction path, bonding material, and liquid composition
KR101651932B1 (ko) * 2009-10-26 2016-08-30 한화케미칼 주식회사 카르복실산을 이용한 전도성 금속 박막의 제조방법
US11439708B2 (en) 2014-10-06 2022-09-13 Lawrence Livermore National Security, Llc Nanotube trans-membrane channels mimicking biological porins
US10541137B2 (en) * 2018-06-01 2020-01-21 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for non line-of-sight doping
KR102138149B1 (ko) * 2019-08-29 2020-07-27 솔브레인 주식회사 박막 형성용 성장 억제제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판
US12311053B2 (en) 2019-12-13 2025-05-27 Lawrence Livermore National Security, Llc Nanotube-vesicle compositions and uses thereof
CN116261606A (zh) * 2020-08-25 2023-06-13 周星工程股份有限公司 基板处理设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2745677B2 (ja) 1989-05-18 1998-04-28 三菱瓦斯化学株式会社 銅張基板の製造法
KR0137370B1 (ko) * 1988-11-07 1998-04-27 니시가와 레이치 구리 도금된 수지 제품의 제조방법
US6232150B1 (en) * 1998-12-03 2001-05-15 The Regents Of The University Of Michigan Process for making microstructures and microstructures made thereby
CA2313155C (en) * 1999-06-30 2003-09-30 Sumitomo Electric Industries, Ltd. Group iii-v nitride semiconductor growth method and vapor phase growth apparatus
US7629017B2 (en) * 2001-10-05 2009-12-08 Cabot Corporation Methods for the deposition of conductive electronic features
JP3771882B2 (ja) 2002-04-30 2006-04-26 三菱重工業株式会社 金属膜作製装置及び金属膜作製方法
US7522822B2 (en) * 2004-01-06 2009-04-21 Robert Trujillo Halogen lamp assembly with integrated heat sink
WO2005106936A1 (ja) * 2004-04-30 2005-11-10 Ebara Corporation 基板の処理装置
JP2007332422A (ja) * 2006-06-15 2007-12-27 Ebara Corp 成膜方法及び成膜装置

Also Published As

Publication number Publication date
US20080000416A1 (en) 2008-01-03
JP2007332453A (ja) 2007-12-27
US8029856B2 (en) 2011-10-04

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