JP4934344B2 - 半導体光集積素子及び半導体光集積デバイス - Google Patents

半導体光集積素子及び半導体光集積デバイス Download PDF

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JP4934344B2
JP4934344B2 JP2006105932A JP2006105932A JP4934344B2 JP 4934344 B2 JP4934344 B2 JP 4934344B2 JP 2006105932 A JP2006105932 A JP 2006105932A JP 2006105932 A JP2006105932 A JP 2006105932A JP 4934344 B2 JP4934344 B2 JP 4934344B2
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signal
wavelength
laser
semiconductor
quantum well
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JP2007279406A5 (enExample
JP2007279406A (ja
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茂樹 牧野
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日本オプネクスト株式会社
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Priority to US11/481,918 priority patent/US7809038B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
JP2006105932A 2006-04-07 2006-04-07 半導体光集積素子及び半導体光集積デバイス Active JP4934344B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006105932A JP4934344B2 (ja) 2006-04-07 2006-04-07 半導体光集積素子及び半導体光集積デバイス
US11/481,918 US7809038B2 (en) 2006-04-07 2006-07-07 Electro-absorption optical modulator integrated with a laser to produce high speed, uncooled, long distance, low power, 1550 nm optical communication device with optimized parameters

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006105932A JP4934344B2 (ja) 2006-04-07 2006-04-07 半導体光集積素子及び半導体光集積デバイス

Publications (3)

Publication Number Publication Date
JP2007279406A JP2007279406A (ja) 2007-10-25
JP2007279406A5 JP2007279406A5 (enExample) 2009-03-12
JP4934344B2 true JP4934344B2 (ja) 2012-05-16

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US (1) US7809038B2 (enExample)
JP (1) JP4934344B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009054226A1 (ja) 2007-10-26 2009-04-30 Asahi Kasei Chemicals Corporation たんぱく質の精製方法
JP4842983B2 (ja) * 2008-02-14 2011-12-21 日本電信電話株式会社 半導体光集積素子及びその作製方法
JP4971235B2 (ja) * 2008-04-08 2012-07-11 日本電信電話株式会社 半導体光集積素子
JP5043880B2 (ja) * 2009-03-31 2012-10-10 日本オクラロ株式会社 半導体素子及びその製造方法
JP2010283104A (ja) * 2009-06-04 2010-12-16 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
JP5597029B2 (ja) * 2010-05-27 2014-10-01 住友電気工業株式会社 波長可変半導体レーザ
JP2012002929A (ja) * 2010-06-15 2012-01-05 Opnext Japan Inc 半導体光素子の製造方法、レーザモジュール、光伝送装置
JP5545847B2 (ja) * 2010-06-16 2014-07-09 日本電信電話株式会社 光半導体装置
EP2420882A1 (en) * 2010-08-16 2012-02-22 Alcatel Lucent Active photonic device with flattened photo-generated carrier distribution
JP2012141335A (ja) 2010-12-28 2012-07-26 Mitsubishi Electric Corp 非冷却光半導体装置
JP5622239B2 (ja) * 2011-02-21 2014-11-12 日本電信電話株式会社 光送信器及び光送信器の駆動条件設定装置
JP2012209286A (ja) * 2011-03-29 2012-10-25 Hitachi Ltd 光モジュール
JP2012256770A (ja) * 2011-06-10 2012-12-27 Furukawa Electric Co Ltd:The レーザモジュール
JP2012209583A (ja) * 2012-07-12 2012-10-25 Japan Oclaro Inc レーザ素子及び光送信モジュール
JP6180213B2 (ja) * 2012-09-19 2017-08-16 日本オクラロ株式会社 光モジュール及び光モジュールの制御方法
JP2013165288A (ja) * 2013-04-19 2013-08-22 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
JP6213103B2 (ja) * 2013-09-27 2017-10-18 三菱電機株式会社 半導体光素子および光モジュール
US9762025B2 (en) * 2016-02-17 2017-09-12 TeraMod LLC Temperature insensitive integrated electro-absorption modulator and laser
JP6866976B2 (ja) * 2016-10-27 2021-04-28 住友電工デバイス・イノベーション株式会社 半導体レーザ装置の動作条件決定方法
US10923879B2 (en) 2016-11-17 2021-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for fabricating an elctro-absorption modulated laser and electro-absorption modulated laser
JP6920851B2 (ja) * 2017-03-29 2021-08-18 日本ルメンタム株式会社 半導体光素子、光送信モジュール、光モジュール、及び光伝送装置、並びにそれらの製造方法
CN111418120B (zh) * 2017-12-04 2022-10-21 三菱电机株式会社 电场吸收型调制器、光半导体装置及光模块
WO2021097560A1 (en) 2019-11-18 2021-05-27 Electrophotonic-Ic Inc. Vertically integrated electro-absorption modulated lasers and methods of fabrication
EP4481962A1 (en) * 2022-02-14 2024-12-25 Nippon Telegraph And Telephone Corporation Optical transmitter

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US5771256A (en) * 1996-06-03 1998-06-23 Bell Communications Research, Inc. InP-based lasers with reduced blue shifts
JP2001013472A (ja) * 1999-06-28 2001-01-19 Nec Corp 光半導体素子および光通信装置
JP2001127377A (ja) * 1999-10-28 2001-05-11 Hitachi Ltd 光送信装置および光伝送装置
JP2002134842A (ja) * 2000-10-26 2002-05-10 Hitachi Ltd 半導体レーザ装置
US7120183B2 (en) 2001-07-11 2006-10-10 Optium Corporation Electro-absorption modulated laser with high operating temperature tolerance
JP4108400B2 (ja) * 2002-07-24 2008-06-25 富士通株式会社 電界吸収型光変調器を備えた半導体レーザモジュールの駆動回路および駆動方法
JP2004273993A (ja) * 2003-03-12 2004-09-30 Hitachi Ltd 波長可変分布反射型半導体レーザ装置
CN1823456A (zh) * 2003-06-10 2006-08-23 福托纳米公司 在二阶或高阶分布反馈激光器中抑制空间烧孔的方法和设备
JPWO2005053124A1 (ja) * 2003-11-28 2010-02-04 日本電気株式会社 分布帰還型半導体レーザ、分布帰還型半導体レーザアレイ及び光モジュール
JPWO2005081050A1 (ja) * 2004-02-20 2008-01-10 日本電気株式会社 変調器集積化光源およびその製造方法
JP5059601B2 (ja) * 2004-04-15 2012-10-24 インフィネラ コーポレイション Ｗｄｍ送信ネットワーク用クーラーレス集積回路および浮動波長グリッドフォトニック集積回路（ｐｉｃ）
JP4421951B2 (ja) * 2004-06-11 2010-02-24 日本オプネクスト株式会社 光送信モジュール
JP4934271B2 (ja) 2004-06-11 2012-05-16 日本オプネクスト株式会社 単一電源駆動光集積装置

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JP2007279406A (ja) 2007-10-25
US7809038B2 (en) 2010-10-05

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