JP4927884B2 - Glass substrate etching apparatus and glass thin plate produced by the etching apparatus - Google Patents

Description

  The present invention relates to a glass substrate etching apparatus that etches a glass substrate to reduce the thickness of the glass substrate. More specifically, at least one of the glass substrates is arranged, and a lower portion of the glass substrate is disposed at the bottom of the glass substrate. A fixing member is provided for fixing and removing the glass substrate so that the glass substrate and the ground form an inclination, and an etching solution is sprayed downward on the glass substrate. The present invention relates to a glass substrate etching apparatus including an injection member and a glass thin plate manufactured by the apparatus.

  As modern society becomes highly information-oriented, photoelectronics-related parts and devices have been remarkably advanced and spread. Among them, research on display devices for displaying images was accelerated for television devices and personal computer monitor devices. As a result, the research on the glass thin plate used for the substrate essential for the display apparatus and the method for producing the thin plate has been accelerated.

  Conventionally, techniques for thinning a display panel in light weight include a mechanical polishing method and a chemical wet etching method (wet-etching). In the early stages of display development, a very thin slim panel was not required, and many mechanical polishing methods were used. Recently, however, the chemical wet etching method (wet-etching), which has excellent productivity while requiring an ultra slim product, has begun. It was.

  Among the above-mentioned chemical wet etching methods (wet-etching), the dipping method was the first to be applied to the TFT-LCD panel slim manufacturing method, and the spray method and the jet flow were further advanced. But the similar principle of the above dapping method was applied. The only difference is the supply of macroscopic etching solution and the diffusion and removal of reaction products.

The chemical wet etching method will be briefly described. In the wet etching method, after the stirring of the etching solution is completed, [H ⁺ ], [HF] and [HF2 ⁻ ] which are main components of the etching solution. The above chemical reaction formula is as follows by using a chemical reaction between O—Si—O (SiO ₂ ) which is a main component of the glass substrate.

  The step of etching the glass substrate using the etchant containing fluoric acid (HF) can be divided into the following five steps. The above five steps are etching characteristics. Influences. The five stages are i) diffusion of the etching solution in the diffusion layer near the glass substrate, ii) the component of the etching solution is adsorbed on the surface of the glass substrate, iii) the chemical reaction between the component of the etching solution and the glass substrate, iv) The reaction product produced after the chemical reaction is detached from the glass substrate, and v) The reaction product is removed out of the diffusion floor near the glass substrate.

  The technologies for the dipping method, the spray method, and the jet flow method, which are wet etching methods using the above chemical principle, are as follows. In the dipping method, an etching bath is filled with an etching solution, a glass substrate is attached to the etching solution, and then an air bubble is generated at the bottom of the etching bath. The air bubble causes the etching liquid to flow on the surface of the glass substrate. Here, the air bubbles relate to the kinetics of the etching solution or product such as the diffusion of the etching solution, the separation of the reaction product, and the removal from the diffusion layer. The air bubbles increase the kinetic energy of the etching solution and the reaction product, thereby helping to quickly generate contact, diffusion and separation.

  That is, the new liquid is quickly supplied to the glass substrate and the product is quickly extracted from the substrate surface. The advantage of the dipping method that operates on the principle as described above is that the etching solution is fully filled in the etching tank, so that the substrate can be inserted into the cassette and several sheets can be put in at once and the productivity is high. It is. The disadvantage of the dipping method is that the reaction product continues to remain in the etching tank and the reaction product adheres to the surface of the substrate, which adversely affects the surface quality. Due to the above reasons, it is difficult to reduce the thickness of the glass substrate by increasing the etching amount of the glass substrate, and there is a disadvantage that a large amount of etching solution is used to etch the glass substrate. There is.

  The spray method has been developed to compensate for the disadvantages of the dipping method as described above. The above-mentioned spray method is an advanced method from the dipping method in terms of quality. Referring to FIG. 1, in the spray method, the etching liquid 12 is sprayed from the nozzle 11 and removed from the glass substrate 13. The stage of etching through the principle of etching is equivalent to that mentioned in the dipping method above. However, in the above spray method, the etching solution is injected perpendicularly onto the glass substrate using a tool called spray, so the kinetic energy of the etching solution is very large, and the supply of the new solution and the removal of the product are more rapid and uniform. Can be. In addition, the above-mentioned spray method can realize surface quality superior to the dipping method, and the etch rate is slightly higher at the same temperature.

  In the spray method, the reaction product is easily removed and the etching solution is circulated between the solution tank and the etching space, so that a large-capacity tank can be used. In addition, the spray method can be used continuously through treatment of reaction products, etc., so that the surface quality can be maintained in an excellent state, and the amount of etching solution used can be reduced. is there. However, in the case of the spray method described above, the glass substrates must be processed one by one.

  In order to solve the above-mentioned problems of the prior art, a jet flow method has been developed, and the jet flow method seems to be a mixture of a dipping method and a spray method. In the jet flow method, after an etching bath is filled with an etching solution and a glass substrate is deposited, a flow of the etching solution is generated strongly to serve as an air bubble by a dipping method. Further, the etching solution was continuously supplied to the etching tank, and the etching solution exceeding the etching tank was recovered and used. However, the above-described jet flow method has a problem in that it can increase productivity and requires a lot of initial investment costs.

  The present invention has been proposed in order to solve the above-described problems. In the glass substrate etching apparatus according to the present invention, at least one glass substrate is arranged, and the glass substrate is disposed below the glass substrate. The glass substrate and the ground are inclined so that the glass substrate can be fixed and removed, and an etching solution is sprayed downward on the glass substrate. A glass substrate etching apparatus capable of easily manufacturing a glass substrate with a thinner thin plate and a glass thin plate with improved quality produced by the above apparatus, characterized in that the injection member is provided. There is a purpose to do.

  In an apparatus for etching a glass substrate according to the present invention for achieving the above-described object, at least one of the glass substrates is arranged, and the glass substrate and the ground form an inclination below the glass substrate. In this manner, the glass substrate is provided with a fixing member that allows the glass substrate to be fixed and removed, and an upper portion of the glass substrate is provided with an injection member for injecting an etching solution downward. .

  Preferably, the spray member includes at least one nozzle and a nozzle head, and the etchant is sprayed by the nozzle.

  Preferably, the distance between the glass substrate and the nozzle end is determined by an arrangement interval of the nozzles and an injection angle of the nozzle etching liquid.

  Preferably, the inclination formed between the glass substrate and the vertically penetrating vertical surface of the nozzle is between 0 ° and 45 °.

  Preferably, a pitch between a plurality of glass substrates arranged on the fixing member is 5 mm to 300 mm.

  Preferably, an etching solution storage tank connected to the spray member is additionally provided, and a reactant storage tank in which a reaction product of the etchant sprayed from the nozzle and the glass substrate is collected at a lower end of the fixing member. In addition, an unreacted etchant is introduced into the etchant storage tank and circulated in the reactant storage tank.

  Preferably, the reactant storage tank includes a filter member for separating the reactant and the unreacted etching solution.

  Preferably, the etching solution is fluoric acid, and the etching rate of the glass substrate varies depending on the concentration of hydrogen ions, fluoric acid, and difluoric acid in the etching solution.

  Preferably, the fixing member forms a glass substrate contact member for fixing the glass substrate so that the reactants can easily escape to the reactant storage tank.

A glass substrate according to the present invention for achieving the above-mentioned object is manufactured by a glass substrate etching apparatus and has a thickness of 0.3 to 1 mm, and has a TFT area of 1000 × 1200 mm ² to 1100 × 1300 mm ^2. It is a glass thin plate of LCD.

As described above, according to the glass substrate etching apparatus of the present invention as described above, the glass substrate can be more easily manufactured with a thin plate, thereby improving the productivity. The substrate etching apparatus allows the etching solution to flow along the glass substrate to improve the surface quality, enable ultra-slim etching of 0.3 mm or less, and large-area ultra-slim etching of 1000 × 1200 mm ² or more. Has all the advantages such as making it more economical.

FIG. 1 is a view showing a manufacturing process showing that a glass substrate is etched and etched through a conventional technique. FIG. 2 is a perspective view of the glass substrate etching apparatus according to the first embodiment of the present invention. FIG. 3 is a view showing a manufacturing process of etching etching of glass according to the first embodiment of the present invention. 4A and 4B are a side view and a front view showing the geometrical arrangement of the vertical surface and substrate of the nozzle according to the present invention. FIG. 5 is a comparative diagram comparing the glass etching method of the prior art and the present invention. FIG. 6 is a graph showing the relationship between the amount of the etchant supplied to the surface of the glass substrate, the etch rate, and the surface quality. FIG. 7 is a graph showing the difference between the amount of etching solution supplied to the surface of the substrate and the thickness above and below the substrate. FIG. 8 is a view showing an example of the distribution of the difference in etching thickness depending on the distance between the glass substrates. FIG. 9 is a view showing the geometric relationship between the glass substrate and the nozzle according to the first embodiment of the present invention. FIG. 10 is a view illustrating a geometric relationship between a glass substrate and a fixing member according to a second embodiment of the present invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

  In the accompanying drawings, FIG. 1 shows a manufacturing process showing that a glass substrate is etched and etched through the prior art, and FIG. 2 is a perspective view of the glass substrate etching apparatus according to the first embodiment of the present invention. FIG. 3 is a view showing a glass etching etching manufacturing process according to the first embodiment of the present invention.

  4 is a side view and a front view showing the geometric arrangement of the nozzle and the substrate according to the present invention, and FIG. 5 is a comparative view comparing the glass etching method between the prior art and the present invention. 6 is a graph showing the relationship between the amount of the etching solution supplied to the surface of the glass substrate, the etch rate, and the surface quality.

  FIG. 7 is a graph showing the difference between the amount of the etching solution supplied to the surface of the substrate and the thickness above and below the substrate. FIG. 8 shows an example of the distribution of the difference in etching thickness depending on the distance between the glass substrates. FIG. 9 is a view showing a geometrical relationship between the glass substrate and a vertical plane penetrating the nozzle vertically according to the first embodiment of the present invention.

  FIG. 10 is a view showing a geometrical relationship between the glass substrate and the fixing member according to the second embodiment of the present invention.

  Referring to FIGS. 2 and 3, the present invention relates to a glass substrate etching apparatus 100 that etches the surface of the glass substrate 300 to reduce the thickness of the glass substrate 300. The etching apparatus 100 includes a glass substrate 300, an injection member 101 that injects an etching solution downward, and a fixing member 200 that fixes the glass substrate 300.

At least one glass substrate 300 must be arranged. It is possible to manufacture several thin glass substrates at a time by putting several glass substrates 300 into the etching apparatus. Further, the glass substrate 300 contains silicon (Si) or silicon oxide (SiO ₂ ) and should be etched by fluoric acid (HF) as an etchant. However, the glass substrate 300 can be arranged differently by the etching solution 104, and the present invention is not limited to this.

  Then, a fixing member 200 that can fix the glass substrate 300 is formed below the glass substrate 300 so that the glass substrate 300 and the ground form an inclination. At this time, the substrate does not have to be exactly 90 ° with the etching solution supply device. The fixing member 200 is made of a polymer resin, an organic substance or the like, so that the glass substrate 300 is fixed and at the same time the contact surface with the glass substrate 300 must be minimized. This is because the etching solution must be sprayed onto the glass substrate 300 to respond without any gaps. However, the fixing member 200 is not limited to the polymer resin and the like as long as the glass substrate 300 can be fixed.

  In addition, the fixing member 200 can be formed with a gap so that several glass substrates 300 can be fixed. The width of the glass substrate 300 and the fixing member 200 Can be fixed so as to be sandwiched equally, and the fixing member 200 is fixed with a minimum area.

  The fixing member 200 can fix several glass substrates 300, and the fixing member 200 is integrated into the etching zone with the glass substrate 300 interposed therebetween. In this method, the glass substrate 300 is removed after the glass substrate 300 is etched. As described above, the glass substrate 300 can be etched at a time because it can be easily put into and discharged from the etching zone of the fixing member 200. As described above, the present invention is effective because one glass substrate 300 or a plurality of glass substrates 300 can be etched according to circumstances. Further, the present invention can etch more glass substrates 300 than the dipping method while applying the spray method, and is very productive and economical.

  In addition, since the fixing member 200 has almost no external force applied to the glass substrate 300, the fixing member 200 can be implemented flexibly. Referring to FIG. 10, the glass substrate 300 can be fixed by providing a nipper 202 as the fixing member 200. This is because if the fixing member 200 is in continuous contact with the glass substrate 300, the reaction product accumulates on the fixing member 200 and a surface quality defect such as a stain occurs. The present invention has an advantage that the fixing member 200 can be provided according to the type and process of the substrate of the fixing member 200 and the design freedom is very large. The reason is that the etching liquid 104 is sprayed along the surface of the substrate above the glass substrate 300, so that the influence of external force can be reduced to the minimum.

An injection member 101 for injecting an etching solution 104 is provided on the glass substrate 300. Since the etching solution 104 is supplied from the top to the bottom provided on the glass substrate 300, almost no external force is received by the glass substrate 300. This is because the external force received by the glass substrate 300 is small, so that it is very easy to design a support structure against gravity. For the above reasons, it is very advantageous to make the glass substrate 300 very thin at 0.1 mm or less and to etch a large area of 1100 × 1250 mm ² or more for 4 generations or more.

  The spray member 101 includes at least one nozzle 103 and a nozzle head 102, and the etching liquid is sprayed by the nozzle 103 in a spray form. One or more nozzle heads 102 are formed, and at least one nozzle 103 is formed on one nozzle head 102.

  Referring to FIG. 5, the reason why the spraying is performed is that a large area can be etched even with a small amount, and the thickness of the etching can be adjusted to be constant. By forming the spray member 101 on the glass substrate 300, the pressure applied to the glass substrate 300 when the etching solution 104 is sprayed is minimized. Further, the etching liquid 104 that falls due to gravity at the upper part contacts the upper part, the center, or the lower part of the glass substrate 300 and then attaches to the glass substrate 300 by the tension of the surface, and naturally etches the surface of the glass substrate 300 while flowing downward. Compared with this, in the spray method of the prior art, the pressure received by the glass substrate 13 at the time of spraying is large while the etching solution 12 is sprayed directly onto the glass substrate 13.

  Referring to FIG. 4, the interval between the glass substrate 300 and the end of the nozzle 103 is determined by the arrangement interval of the nozzle 103 and the spray angle of the etching solution 104 of the nozzle 103. The distance between the glass substrate 300 and the end of the nozzle 103 is determined as described above so that a portion not exposed to the etching solution 104 does not occur. The distance h between the glass substrate 300 of the present invention and the end of the nozzle 103 is represented by the following parameter (parameter) if the distance between the nozzles is represented by Np, the distance between the nozzle heads by Hp and the nozzle injection angle by θ. ) Can be defined.

[Mathematical formula 1]

  The distance between the nozzle 103 and the glass substrate 300 must have a geometric characteristic that satisfies all the conditions of Equation 1. When the distance between the outermost branch of the glass substrate 300 and the outermost nozzle 103 is d when viewed from the upper side of FIG. 4, a portion that is not exposed to the etching solution 104 does not occur if the following mathematical formula 2 is satisfied. .

[Mathematical formula 2]

  When the distance between one surface of the glass substrate 300 and the outermost nozzle 103 when viewed from the upper side of FIG. 4 is d, d ′ can be expressed by the following mathematical formula 3, and Must satisfy the formula.

[Mathematical formula 3]

  The inclination between the glass substrate 300 and the vertical plane through which the nozzle passes is formed between 0 ° and 45 °. Referring to FIG. 9, it is most preferable that the glass substrate 300 is 0 ° each of which forms a vertical plane that penetrates the nozzle 103 vertically. However, in the above-described manner, since the vapor is generated due to the injection of the nozzle and the collision of the liquid with the solid in the etching space, the etching etching is generated even by the gas that is not liquid. When each of 300 and the vertical plane that penetrates through the nozzle 103 is inclined at 30 °, there is almost no difference in thickness between the upper and lower sides. However, when the tilt is 47 °, the reaction product cannot be removed smoothly, and the thickness of the lower portion of the glass substrate 300 may increase. Therefore, it is preferable that the inclination is formed within the range of the inclination as described above.

  The pitch between the glass substrates 300 arranged on the fixing member 200 must be 5 mm to 300 mm. By setting the pitch between the glass substrates 300 as described above, a large number of substrates are etched so that productivity is improved when the glass substrate 300 is etched. Actually, arranging the substrates in the same space at a pitch of 40 mm and arranging them at a pitch of 8 mm is a very important factor that affects the productivity because the productivity is five times different. Reducing the pitch of the glass substrate 300 may improve productivity, but in order to reduce the pitch of the nozzle array, the pitch of the nozzle head 102 with the nozzles must also be reduced. Don't be. If the pitch of the nozzle head 102 is reduced, the pipe diameter must be reduced, but in such a case, it is difficult to supply a sufficient amount of liquid to the nozzle 103. Therefore, it is necessary to use non-standard parts, resulting in a large investment cost. Necessary problems will occur. In addition, there is a disadvantage that it is very difficult to maintain and repair the nozzle 103.

  Therefore, it is preferable that the pitch between the glass substrates 300 is established within the distance range. Also, since the number of substrates that are put in at one time means the total etching amount of the etching process, the etching apparatus, in particular, the piping amount and the pumping amount that can maintain the tank dose and the injection pressure injected by the nozzle uniformly. The spec must be taken into account.

  The spray member 101 includes an etching solution storage tank, and the etching solution storage tank and the reactant storage tank are connected to each other. The etching solution storage tank contains fluoric acid, and the concentration and amount of the fluoric acid ions are adjusted by the process of the present invention.

  The lower end of the fixing member 200 is provided with a reactant storage tank in which the reactants of the etching solution 104 and the glass substrate 300 sprayed from the nozzle 103 are collected, and the reactant storage tank serves as an etchant storage tank. Unreacted etchant is introduced and circulated. The reactants reacting with the etching solution 104 and the glass substrate 300 are quickly discharged into the reactant storage tank. The reactant storage tank and the etchant storage tank are connected or the same space is used to circulate the unreacted etchant. The unreacted etchant among the reactants is also formed so as to flow into the etchant storage tank, so that a new solution can be supplied and a product can be quickly removed to promote surface quality characteristics. The reactant storage tank may include a filter member for separating the reactant and the unreacted etchant 104.

The etching solution 104 is fluoric acid (HF), and the etching rate of the glass substrate varies depending on the concentration of hydrogen ions (H ⁺ ), fluoric acid (HF) and difluoric acid (HF ₂ ) in the etching solution 104. Is done. This means that the etch rate changes depending on the concentration of the hydrogen ions (H ⁺ ), fluoric acid (HF) and difluoric acid (HF ₂ ), and the liquid supplied to the surface of the glass substrate 300. It has no proportional relationship with the amount of.

  Referring to FIG. 6, the etch rate and the surface quality can be ensured as long as the amount of the etchant 104 above a certain level is supplied. Since the amount of the etchant 104 is not proportional to the etch rate and the surface quality, the etchant 104 may be supplied in an amount greater than necessary. 6 and 7, even if the liquid is supplied to the upper portion of the glass substrate 300, the upper portion 302 and the lower portion of the glass substrate 300 may be included if the etching solution contains a necessary amount or more in the lower portion of the substrate. No difference in thickness and quality in 303 occurs. That is, if the etching solution more than necessary is always in contact with the surface of the glass substrate 300, it is possible to secure not only the etch rate but also the excellent surface quality.

  Referring to FIG. 10, the fixing member 200 of the present invention forms the glass substrate contact member 201 for fixing the glass substrate 300 so that the reactants can easily escape into the reactant storage tank. . The glass substrate contact member 201 is made of a non-acid-resistant material, PVC, PEEK (poly ether ether), Teflon (registered trademark), or the like as a circular structure. The glass substrate contact member 201 is not limited to the above-described material and form, but is not limited to this as long as the glass substrate 300 can be fixed better and the etching solution 104 and the reactant can flow out well. Further, the glass substrate contact member 201 is in point contact with the glass substrate 300 so that the reaction product flows most maximally, and the side surface has a larger interval than the thickness of the substrate.

The glass substrate manufactured by the glass etching apparatus described above has a thickness of 0.3 to 1 mm, and can be manufactured to a thickness of 0.1 mm or less. The etching apparatus of the glass can be produced a TFT-LCD glass substrate 1100 × 1300 mm ² area to 1000 × 1200 mm ² not become a thickness of the.

  Hereinafter, as one of the preferred embodiments of the present invention, the difference in thickness between the upper and lower portions of the glass substrate 300 due to the change in the arrangement interval of the glass substrates 300 will be closely observed. In another embodiment, the difference between the upper and lower thicknesses of the glass substrate 300 due to the distance between the nozzles 103 and the glass substrate 300 will be often observed.

[First embodiment]
In order to investigate that the difference in thickness between the top and bottom of the glass substrate hardly occurs when the etching solution exceeds a certain amount, the upper nozzles are arranged with a horizontal and vertical pitch of 50 mm, and the glass pitch is infinite, 90 mm, and 30 mm. The amount of the etching solution supplied to the surface of the substrate was changed. The nozzle ejection amount used at this time is 0.1 to 2 liters per minute, and the etching substrate is 370 × 470 (mm) × 0.63 mm (thickness) and 300 μm is etched.

  Referring to Table 1 and FIG. 8, the required specifications can be obtained by supplying more etching liquid than necessary to the substrate. If you want to obtain a uniform thickness distribution, increase the amount of etching solution supplied at the top, and increase the amount of etching solution supplied at the top to increase productivity, reduce the glass array pitch. It can be seen that a large number of glass substrates can be etched out in the same space.

[Second Embodiment]
At present, the uniformity specification of the thickness of the LCD substrate is ± 20 μm, and in order to satisfy this specification, the distance between the nozzle and the substrate arrangement is changed, and the thickness of the upper portion 302 and the lower portion 303 of the glass substrate is thereby changed. I investigated the difference. In the embodiment when a 590 × 670 size bonding panel (1.26 mm thickness) of low density glass such as TFT-LCD non-alkali glass (NEG OA-21 or SCP E2K) is etched to 0.6 mm. is there.

The ejection amount of the nozzle used in the second embodiment of the present invention is 0.3 liter per minute. Actually, arranging the substrates in the same space at a pitch of 40 mm and arranging them at a pitch of 8 mm is a very important factor that affects the productivity because the productivity is five times different. Reducing the pitch of the substrate arrangement brings an improvement in productivity, but in order to reduce the pitch of the nozzle arrangement, the pitch of the nozzle head with the nozzle must also be reduced. If the head pitch is reduced, the pipe diameter must be reduced, but in this case, it is difficult to supply sufficient liquid to the nozzle, so it is necessary to use non-standard parts, resulting in a disadvantage that requires a lot of investment costs. As a result, there are disadvantages that make maintenance and repair very difficult. Since the number of substrates that are loaded at one time means the total etching amount of the etching process, the specifications of the etching apparatus, particularly the piping and pump dosage that can maintain the tank dosage and the jetting pressure jetted by the nozzle uniformly. And so on. According to this experiment, we had to supply a certain amount of liquid to the surface to satisfy the quality of the display.
Nozzle ejection volume per nozzle = Nozzle [m ³ / min]; ejection volume per minute pitch of substrate array = Gpitch [m]; array dimension of substrate,
Horizontal pitch of nozzle array = Nhitch [m]; horizontal pitch dimension of nozzle array,
Vertical pitch of nozzle array = Nvpitch [m]; Vertical pitch of nozzle array The price of C _f is expressed by Equation 4 below.

[Formula 4]

In the present invention, an arbitrary variable C _f is a critical factor, which is a dimension of m ² / min without considering the length in the modification development only considering the pitch of the substrate. However, the actual meaning is m ³ / min. This is because the length of the substrate is not an important factor.

In this experiment, the nozzle ejected about 0.3 liters per minute. Table 3 below shows the price of C _f depending on the distance between the nozzle and the glass substrate.

  Looking at Table 3 above, when the nozzle pitch is 50 mm (0.05 m) and the substrate pitch is 8 mm (0.008 m), the difference in thickness between the top and bottom of the substrate is partially at a level of 35 to 50 μm. Although it comes into the specifications of the film, since several sheets are etched at the same time, the difference in the thickness of the substrate before etching must be 10-15 μm, so that a margin as much as the difference in thickness before etching must be secured. A nozzle arrangement pitch of 50 mm and a substrate arrangement pitch of 8 mm is a difficult geometric arrangement for practical application.

  On the other hand, the present invention is related to the chemical etching method among the methods for thinning the glass substrate. The existing dipping method has a problem that uniform etching and accurate thickness control are difficult on the entire surface of a large area. In addition, since the spray method of the prior art supplies both liquids by spraying, it is structurally very difficult to support a large area substrate against gravity by causing gas flow along with the liquid injection pressure. There was a problem.

  In order to solve the above problems, the present invention minimizes external force by spraying an etching solution on the glass substrate. Further, the glass substrate is etched by etching a 1.26 mm or 1.0 mm thick TFT-LCD bonding panel, for example, 1.0 mm or less (0.9 mm, 0.8 mm, 0.6 mm, etc.) The thin film can be manufactured. The etching apparatus of the present invention can perform slim etching on a glass substrate, a silicon wafer, and the like before bonding, as well as a display bonding panel such as TFT-LCD and OLED. Furthermore, the etching apparatus of the present invention is a process technology that promotes surface quality and has excellent productivity and low investment cost relative to productivity.

As described above, according to the glass substrate etching apparatus of the present invention as described above, the glass substrate can be more easily manufactured with a thin plate, thereby improving the productivity. The substrate etching apparatus allows the etching solution to flow along the glass substrate to improve the surface quality, enable ultra-slim etching of 0.3 mm or less, and large-area ultra-slim etching of 1000 × 1200 mm ² or more. Has all the advantages such as making it more economical.

Although the present invention has been described with reference to one embodiment illustrated in the drawings, this is merely illustrative, and various modifications and equivalents will occur to those skilled in the art in the future. It is understood that other embodiments are possible. Therefore, the true technical protection scope of the present invention must be determined by the technical concept of the attached claims.

Claims (8)

In a glass substrate etching apparatus that reduces the thickness of the glass substrate by etching the glass substrate,
At least one glass substrate is arranged, and a fixing member is provided at a lower portion of the glass substrate so that the glass substrate and the ground form an inclination so that the glass substrate can be fixed and removed. Further, the upper part of the glass substrate is provided with at least one nozzle and a nozzle head which are directed to the substrate surface of the glass substrate at a predetermined spray angle and sprayed downward by a spray. An apparatus for etching a glass substrate comprising a member.   2. The glass substrate etching apparatus according to claim 1, wherein an interval between the glass substrate and a nozzle end is determined by an arrangement interval of nozzles and an injection angle of an etching solution of the nozzle.   2. The glass substrate etching apparatus according to claim 1, wherein an inclination formed between the glass substrate and a vertically penetrating vertical surface of the nozzle is between 0 ° and 45 °.   2. The glass substrate etching apparatus according to claim 1, wherein a pitch between a plurality of glass substrates arranged on the fixing member is 5 mm to 300 mm. 3.   An etching solution storage tank connected to the spray member is additionally provided, and a reaction product storage tank for collecting a reaction product of the etchant sprayed from the nozzle and the glass substrate is collected at a lower end of the fixing member, and the reaction is performed. 2. The glass substrate etching apparatus according to claim 1, wherein an unreacted etching solution is introduced into the etching solution storage tank and circulated in the material storage tank.   6. The glass substrate etching apparatus according to claim 5, wherein the reactant storage tank includes a filter member for separating the reactant and the unreacted etching solution.   2. The glass substrate etching apparatus according to claim 1, wherein the etching solution is fluoric acid, and the etching rate of the glass substrate varies depending on the concentration of hydrogen ions, fluoric acid and difluoric acid in the etching solution.   2. The glass substrate etching apparatus according to claim 1, wherein the fixing member forms a glass substrate contact member for fixing the glass substrate and allowing reactants to easily escape into the reactant storage tank. 3.

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