JP4927678B2 - パターン形成方法 - Google Patents

パターン形成方法 Download PDF

Info

Publication number
JP4927678B2
JP4927678B2 JP2007261034A JP2007261034A JP4927678B2 JP 4927678 B2 JP4927678 B2 JP 4927678B2 JP 2007261034 A JP2007261034 A JP 2007261034A JP 2007261034 A JP2007261034 A JP 2007261034A JP 4927678 B2 JP4927678 B2 JP 4927678B2
Authority
JP
Japan
Prior art keywords
pattern
resist film
resist
film
intermediate layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007261034A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008257170A5 (https=
JP2008257170A (ja
Inventor
政孝 遠藤
勝 笹子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2007261034A priority Critical patent/JP4927678B2/ja
Priority to US12/029,944 priority patent/US7943285B2/en
Publication of JP2008257170A publication Critical patent/JP2008257170A/ja
Publication of JP2008257170A5 publication Critical patent/JP2008257170A5/ja
Application granted granted Critical
Publication of JP4927678B2 publication Critical patent/JP4927678B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2007261034A 2007-03-13 2007-10-04 パターン形成方法 Expired - Fee Related JP4927678B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007261034A JP4927678B2 (ja) 2007-03-13 2007-10-04 パターン形成方法
US12/029,944 US7943285B2 (en) 2007-03-13 2008-02-12 Pattern formation method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007063171 2007-03-13
JP2007063171 2007-03-13
JP2007261034A JP4927678B2 (ja) 2007-03-13 2007-10-04 パターン形成方法

Publications (3)

Publication Number Publication Date
JP2008257170A JP2008257170A (ja) 2008-10-23
JP2008257170A5 JP2008257170A5 (https=) 2010-09-30
JP4927678B2 true JP4927678B2 (ja) 2012-05-09

Family

ID=39980764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007261034A Expired - Fee Related JP4927678B2 (ja) 2007-03-13 2007-10-04 パターン形成方法

Country Status (1)

Country Link
JP (1) JP4927678B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010135624A (ja) * 2008-12-05 2010-06-17 Tokyo Electron Ltd 半導体装置の製造方法
JP5515459B2 (ja) 2009-07-06 2014-06-11 ソニー株式会社 半導体デバイスの製造方法
JP2011066120A (ja) * 2009-09-16 2011-03-31 Toppan Printing Co Ltd パターン形成方法およびパターン形成体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63170917A (ja) * 1987-01-09 1988-07-14 Nec Corp 微細パタ−ンの形成方法
KR100669862B1 (ko) * 2000-11-13 2007-01-17 삼성전자주식회사 반도체 장치의 미세패턴 형성방법
JP5000250B2 (ja) * 2006-09-29 2012-08-15 東京応化工業株式会社 パターン形成方法
JP5106020B2 (ja) * 2007-02-08 2012-12-26 パナソニック株式会社 パターン形成方法
JP2008227465A (ja) * 2007-02-14 2008-09-25 Renesas Technology Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2008257170A (ja) 2008-10-23

Similar Documents

Publication Publication Date Title
US8084185B2 (en) Substrate planarization with imprint materials and processes
US7862982B2 (en) Chemical trim of photoresist lines by means of a tuned overcoat material
US6939664B2 (en) Low-activation energy silicon-containing resist system
KR101742573B1 (ko) 다중 노광 광리소그래피용 조성물 및 방법
CN103926796A (zh) 用于光刻的涂层材料和方法
JP5520103B2 (ja) 二重露光プロセスにおけるレジスト・パターンの限界寸法変動を緩和する方法
JP5106020B2 (ja) パターン形成方法
KR20130135705A (ko) 감광성 재료 및 리소그래피 방법
JP2008519297A (ja) シリコン含有上面反射防止コーティング材料／障壁層および該層形成方法
JP2008286924A (ja) 化学増幅型レジスト材料、トップコート膜形成用材料及びそれらを用いたパターン形成方法
TW201901303A (zh) 微影圖案化的方法
US7943285B2 (en) Pattern formation method
TW201824349A (zh) 微影圖案化的方法
JP2005148752A (ja) 環状ケタール保護基を有するシリコン含有レジスト系
JP4927678B2 (ja) パターン形成方法
JP5096860B2 (ja) パターン形成方法
KR100745064B1 (ko) 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법
JP6785035B2 (ja) レジストパターン形成方法
JP4485994B2 (ja) パターン形成方法
JP4589809B2 (ja) バリア膜形成用材料及びそれを用いたパターン形成方法
Guerrero et al. Resist double patterning on BARCs and spin-on multilayer materials
CN119439628A (zh) 光阻剂组合物和形成光阻图案及图案化材料层的方法
KR20070071661A (ko) 반도체 소자의 패턴 형성 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100818

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100818

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120123

TRDD Decision of grant or rejection written
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20120126

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120131

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120209

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150217

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4927678

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

LAPS Cancellation because of no payment of annual fees
R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350