JP4916680B2 - 半導体装置の作製方法、剥離方法 - Google Patents
半導体装置の作製方法、剥離方法 Download PDFInfo
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- JP4916680B2 JP4916680B2 JP2005192520A JP2005192520A JP4916680B2 JP 4916680 B2 JP4916680 B2 JP 4916680B2 JP 2005192520 A JP2005192520 A JP 2005192520A JP 2005192520 A JP2005192520 A JP 2005192520A JP 4916680 B2 JP4916680 B2 JP 4916680B2
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/94—Laser ablative material removal
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- Thin Film Transistor (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005192520A JP4916680B2 (ja) | 2005-06-30 | 2005-06-30 | 半導体装置の作製方法、剥離方法 |
| US11/425,559 US7521383B2 (en) | 2005-06-30 | 2006-06-21 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005192520A JP4916680B2 (ja) | 2005-06-30 | 2005-06-30 | 半導体装置の作製方法、剥離方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007012917A JP2007012917A (ja) | 2007-01-18 |
| JP2007012917A5 JP2007012917A5 (enExample) | 2008-05-29 |
| JP4916680B2 true JP4916680B2 (ja) | 2012-04-18 |
Family
ID=37590185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005192520A Expired - Fee Related JP4916680B2 (ja) | 2005-06-30 | 2005-06-30 | 半導体装置の作製方法、剥離方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7521383B2 (enExample) |
| JP (1) | JP4916680B2 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1455394B1 (en) * | 2001-07-24 | 2018-04-11 | Samsung Electronics Co., Ltd. | Transfer method |
| US8030132B2 (en) * | 2005-05-31 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including peeling step |
| US7727773B2 (en) | 2006-10-31 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd | Method of manufacturing an analytical sample and method of analyzing an analytical sample |
| US7897482B2 (en) * | 2007-05-31 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8731706B2 (en) | 2008-09-12 | 2014-05-20 | Hitachi High-Technologies Corporation | Vacuum processing apparatus |
| KR102309244B1 (ko) * | 2013-02-20 | 2021-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI685026B (zh) | 2013-08-06 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 剝離方法 |
| TWI794098B (zh) | 2013-09-06 | 2023-02-21 | 日商半導體能源研究所股份有限公司 | 發光裝置以及發光裝置的製造方法 |
| US9981457B2 (en) * | 2013-09-18 | 2018-05-29 | Semiconductor Emergy Laboratory Co., Ltd. | Manufacturing apparatus of stack |
| JP6513929B2 (ja) * | 2013-11-06 | 2019-05-15 | 株式会社半導体エネルギー研究所 | 剥離方法 |
| KR102334815B1 (ko) | 2014-02-19 | 2021-12-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 박리 방법 |
| TWI679560B (zh) | 2014-03-13 | 2019-12-11 | 日商半導體能源研究所股份有限公司 | 觸控面板 |
| DE112015001780B4 (de) | 2014-04-11 | 2022-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Lichtemittierende Vorrichtung |
| US10259207B2 (en) | 2016-01-26 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming separation starting point and separation method |
| WO2018042284A1 (en) | 2016-08-31 | 2018-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP6981812B2 (ja) * | 2016-08-31 | 2021-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR102554691B1 (ko) * | 2016-10-07 | 2023-07-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판 |
| KR102561983B1 (ko) * | 2017-03-16 | 2023-08-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 및 반도체 장치 |
| DE112022002460T5 (de) | 2021-05-07 | 2024-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
| WO2025198034A1 (ja) * | 2024-03-22 | 2025-09-25 | 日産化学株式会社 | 加工された半導体基板の製造方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258236A (en) * | 1991-05-03 | 1993-11-02 | Ibm Corporation | Multi-layer thin film structure and parallel processing method for fabricating same |
| US5272104A (en) * | 1993-03-11 | 1993-12-21 | Harris Corporation | Bonded wafer process incorporating diamond insulator |
| JPH09318849A (ja) * | 1996-05-24 | 1997-12-12 | Fujitsu Ltd | 光伝送モジュールおよびその製造方法 |
| EP1655633A3 (en) | 1996-08-27 | 2006-06-21 | Seiko Epson Corporation | Exfoliating method, transferring method of thin film device, thin film integrated circuit device, and liquid crystal display device |
| JP4619462B2 (ja) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
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-
2005
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| US20070004233A1 (en) | 2007-01-04 |
| US7521383B2 (en) | 2009-04-21 |
| JP2007012917A (ja) | 2007-01-18 |
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