JP4916680B2 - 半導体装置の作製方法、剥離方法 - Google Patents

半導体装置の作製方法、剥離方法 Download PDF

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Publication number
JP4916680B2
JP4916680B2 JP2005192520A JP2005192520A JP4916680B2 JP 4916680 B2 JP4916680 B2 JP 4916680B2 JP 2005192520 A JP2005192520 A JP 2005192520A JP 2005192520 A JP2005192520 A JP 2005192520A JP 4916680 B2 JP4916680 B2 JP 4916680B2
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JP
Japan
Prior art keywords
layer
circuits
substrate
region
thin film
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Expired - Fee Related
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JP2005192520A
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English (en)
Japanese (ja)
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JP2007012917A (ja
JP2007012917A5 (enExample
Inventor
将文 森末
了介 渡邊
純矢 丸山
大幹 山田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005192520A priority Critical patent/JP4916680B2/ja
Priority to US11/425,559 priority patent/US7521383B2/en
Publication of JP2007012917A publication Critical patent/JP2007012917A/ja
Publication of JP2007012917A5 publication Critical patent/JP2007012917A5/ja
Application granted granted Critical
Publication of JP4916680B2 publication Critical patent/JP4916680B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/94—Laser ablative material removal

Landscapes

  • Thin Film Transistor (AREA)
JP2005192520A 2005-06-30 2005-06-30 半導体装置の作製方法、剥離方法 Expired - Fee Related JP4916680B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005192520A JP4916680B2 (ja) 2005-06-30 2005-06-30 半導体装置の作製方法、剥離方法
US11/425,559 US7521383B2 (en) 2005-06-30 2006-06-21 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005192520A JP4916680B2 (ja) 2005-06-30 2005-06-30 半導体装置の作製方法、剥離方法

Publications (3)

Publication Number Publication Date
JP2007012917A JP2007012917A (ja) 2007-01-18
JP2007012917A5 JP2007012917A5 (enExample) 2008-05-29
JP4916680B2 true JP4916680B2 (ja) 2012-04-18

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Family Applications (1)

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JP2005192520A Expired - Fee Related JP4916680B2 (ja) 2005-06-30 2005-06-30 半導体装置の作製方法、剥離方法

Country Status (2)

Country Link
US (1) US7521383B2 (enExample)
JP (1) JP4916680B2 (enExample)

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US7897482B2 (en) * 2007-05-31 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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TWI685026B (zh) 2013-08-06 2020-02-11 日商半導體能源研究所股份有限公司 剝離方法
TW201943069A (zh) 2013-09-06 2019-11-01 日商半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
US9981457B2 (en) * 2013-09-18 2018-05-29 Semiconductor Emergy Laboratory Co., Ltd. Manufacturing apparatus of stack
JP6513929B2 (ja) * 2013-11-06 2019-05-15 株式会社半導体エネルギー研究所 剥離方法
KR102334815B1 (ko) 2014-02-19 2021-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 박리 방법
TWI679560B (zh) 2014-03-13 2019-12-11 日商半導體能源研究所股份有限公司 觸控面板
DE112015001780B4 (de) 2014-04-11 2022-02-03 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierende Vorrichtung
JP6822858B2 (ja) * 2016-01-26 2021-01-27 株式会社半導体エネルギー研究所 剥離の起点の形成方法及び剥離方法
CN109564851A (zh) 2016-08-31 2019-04-02 株式会社半导体能源研究所 半导体装置的制造方法
JP6981812B2 (ja) * 2016-08-31 2021-12-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102882107B1 (ko) * 2016-10-07 2025-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판
CN110520962B (zh) * 2017-03-16 2023-11-21 株式会社半导体能源研究所 半导体装置的制造方法及半导体装置
US12453275B2 (en) 2021-05-07 2025-10-21 Semiconductor Energy Laboratory Co., Ltd. Display apparatus
WO2025198034A1 (ja) * 2024-03-22 2025-09-25 日産化学株式会社 加工された半導体基板の製造方法

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Also Published As

Publication number Publication date
JP2007012917A (ja) 2007-01-18
US20070004233A1 (en) 2007-01-04
US7521383B2 (en) 2009-04-21

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