JP4901669B2 - Semiconductor package and semiconductor package manufacturing method - Google Patents

Description

  The present invention relates to a semiconductor package and a method for manufacturing the semiconductor package, and more particularly, to an apparatus capable of simplifying and facilitating an assembly process.

  Currently, semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors), IEGTs (Injection Enhanced Gate Transistors), and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are widely used as power semiconductor elements. These semiconductor elements are formed in a plate shape, and include a surface-side power terminal and a control terminal on the surface of the semiconductor element. Moreover, the back surface side power terminal is provided in the back surface of the semiconductor element.

  When the semiconductor element is an IGBT element, the front-side power terminal is an emitter electrode, the back-side power terminal is a collector electrode, and the control terminal is a gate electrode.

  In order to mount such a semiconductor element on a substrate to form a semiconductor package, the power terminal on the back surface side of the semiconductor element is connected to the electrode on the surface side of the substrate by solder bonding. Moreover, the surface side power terminal and the control terminal of the semiconductor element are connected to the electrode on the substrate surface side by wire bonding using an aluminum wire (see, for example, Patent Documents 1 and 2).

  However, when wire bonding is used, since the wires are bonded one by one, the bonding process takes time, and the manufacturing cost may increase. Further, since the wire is looped, the wire length is increased, the wiring inductance is increased, and the outer shape is increased. Further, when vibration is applied to the semiconductor element, there is a possibility that the wire breaks or a short circuit occurs due to contact with an adjacent wire.

  For this reason, a method of bonding an aluminum thin plate or the like without using a wire bonding method on the surface-side power terminal of the semiconductor element, a method of soldering a flat plate or a lead, and pulling it out as an electrode are used.

In a semiconductor module including a plurality of such semiconductor packages, the plurality of semiconductor packages are arranged in a line on a base substrate which is a heat sink. At this time, the back surface of the substrate of the semiconductor package is bonded onto the base substrate. This semiconductor module is mounted on a power control device such as an inverter or a converter.
JP 2002-164485 A JP 2003-110064 A

  In the above-described semiconductor module, since only one surface of each semiconductor package is in contact with the base substrate, heat radiation cannot be sufficiently performed. In addition, since the back surface of each semiconductor package is bonded to the base substrate, the installation area of the semiconductor package with respect to the base substrate is increased. That is, there is a risk of increasing the size of the semiconductor module.

  In order to prevent these problems, it is also known that each semiconductor package is arranged in a line, and these semiconductor packages are sandwiched between a pair of conductive members such as bus bars from the front and back surfaces and provided on a base substrate. Yes.

  However, the pair of conductive members has thermal conductivity and functions as a heat radiating member, so that it expands and contracts in response to current supply. In addition, the end of the conductive member on the base substrate side is a fixed end, and the opposite end is a free end. For this reason, the behavior of the thermal expansion and contraction of the conductive member differs between the free end and the fixed end, and this behavior becomes relatively large at the free end. Due to this behavior, an external force is applied to the semiconductor package, and the semiconductor package may be damaged.

  Further, when the semiconductor package is miniaturized, the connection portion of each terminal of the semiconductor element is also reduced. Therefore, in the semiconductor package manufacturing method, sufficient bonding may not be possible, and this may cause damage to the bonded portion.

  In order to prevent such breakage, it is sufficient to use a method in which the bonding area is widened or a method in which only the one surface is joined, but the side surfaces are continuously joined with solder (or adhesive, etc.). There is also a method of joining. However, in these methods, the number of solder welds increases, and the assembly process such as solder installation, spacer installation process, and welding process may increase. Such an increase in assembly process leads to an increase in mass production costs.

  Accordingly, an object of the present invention is to provide a semiconductor package and a method for manufacturing a semiconductor package that can reduce the manufacturing process even when mechanically bonding without reducing the bonding strength.

  In order to solve the problems and achieve the object, a semiconductor package and a method for manufacturing the semiconductor package of the present invention are configured as follows.

As one aspect of the present invention, a gate electrode formed in a plate shape and provided at the center of the first main surface, an emitter electrode provided around the gate electrode on the first main surface, and a second A semiconductor element having a collector electrode provided on the main surface, and a protrusion formed in a plate shape and provided on one surface facing the first main surface and contacting at least a part of the emitter electrode, A through hole provided in the center of the protrusion, a pedestal part provided on the other surface side of the inner peripheral surface of the through hole, and provided outside the protrusion from the through hole provided in the protrusion. The communication path formed up to the side surface and the first electrode plate having a plurality of openings provided on the outer surface of the protrusion, and the semiconductor element and the first electrode plate are stacked and narrowed. A penetrating port that is formed in a plate shape that can be held and into which the protrusion is inserted, An end is provided on the inner peripheral surface of the penetrating inlet, and a tip thereof is located inside the through hole and is held by the pedestal portion, and extends through the communication path, provided at the tip of the projection. A plurality of control electrodes electrically connected to the gate electrode, and a plurality of control electrodes provided on the inner peripheral surface of the penetrating opening and engaging with the plurality of openings, respectively, and tips of the control electrodes are located inside the outer surface of the protrusion a wiring board having an engagement portion positioned, is formed in a plate shape, characterized in that it comprises a second electrode plate having a main surface of one of which is connected before SL to the collector electrode electrically, the.

As one embodiment of the present invention, a gate electrode formed in the shape of a plate and provided on the center side of the first main surface, an emitter electrode provided around the gate electrode of the first main surface, and a second A semiconductor element having a collector electrode provided on a main surface; a protrusion formed in a plate shape and in contact with at least a portion of the emitter electrode on an opposing surface facing the first main surface; and a center of the protrusion A through hole provided in the base, a pedestal part provided on a side of the inner peripheral surface of the through hole opposite to the opposing surface, and provided on the protrusion and outside the protrusion from the through hole. A communication path formed up to a side surface; an opening provided on an outer surface of the protrusion; and at least one opening partially opening on the outer surface of the protrusion; and an outer surface of the protrusion and the opposing surface A first electrode plate having a hooking portion provided on and projecting, and the semiconductor While being laminated between the the element first electrode plate is formed sandwiched possible plate, the protrusions and the penetration opening the hook portion is penetrated, the peripheral surface of the base end thereof the penetration opening A protrusion that is located inside the through-hole and that is held by the pedestal portion and extends through the communication path, and is provided at the tip of the protrusion and is electrically connected to the gate electrode. Connected to the control electrode, and a wiring board that is provided on the inner peripheral surface of the penetrating opening and engages with the opening, and has an engaging portion positioned on the inner side of the outer surface of the protrusion. When formed in a plate shape, characterized in that it comprises a second electrode plate main surface of one of which is connected before SL to the collector electrode electrically, the.

  As one aspect of the present invention, a first electrode plate that is formed in a square shape and has a protrusion provided on one main surface, and a plurality of openings on the side surface of the protrusion, and the protrusion penetrates. And a wiring board having an engaging portion that is provided on an inner surface of the penetrating hole and that engages with the plurality of openings and has a distal end positioned on the inner side of the outer surface of the protrusion. The step of disposing the opening and the engagement portion at positions where the engagement portion can be engaged, and engaging the plurality of engagement portions of the wiring board with the plurality of openings of the first electrode plate, respectively. A step of assembling the wiring substrate and the first electrode plate; and a step of joining the assembled wiring substrate and the first electrode plate and a semiconductor element having an electrode with a conductive member.

  As one aspect of the present invention, the projection is formed in a square shape and provided on one main surface, and a plurality of openings are provided on at least one side surface of the projection, and the openings are provided. A first electrode plate having a hooking portion provided on a side surface opposite to the side surface of the protrusion, a penetrating opening through which the protrusion and the hooking part penetrate, and the plurality of openings on the inner side surface of the penetrating hole; A wiring board having an engaging portion whose front end is positioned on the inner side of the outer surface of the protruding portion, at a position where the opening and the engaging portion can be engaged, and A step of covering a side surface of the projecting portion with an inner side surface of the penetrating opening, and causing the plurality of openings and the plurality of engaging portions to face each other; and the plurality of opening portions and the plurality of engaging portions facing each other. Is moved in a direction in which the opening and the engagement portion engage with each other. A step of engaging the opening and the engaging portion, and a step of assembling the wiring board and the first electrode plate by covering side surfaces of the hooking portion and the protruding portion with an inner side surface of the penetrating opening. And a step of joining the semiconductor substrate having the wiring board and the first electrode plate and electrodes assembled together with a conductive member.

  As one aspect of the present invention, the protrusion has a protrusion formed on one main surface and having a plurality of openings on at least one side surface of the protrusion, and the protrusion having the openings. A hook portion provided on a side surface of the hook portion, a first electrode plate having an opening provided on a side surface of the hook portion, a penetrating opening through which the protrusion and the hook portion are inserted, and A wiring board that engages with each of the plurality of openings on the inner side surface of the penetrating opening and has an engaging portion whose tip is located inside the outer side surface of the protrusion and the hooking portion. A step of disposing the engaging portion at a position where the engaging portion can be engaged; and a step of covering the side surface of the protrusion with the inner side surface of the penetrating opening and causing the plurality of openings and the plurality of engaging portions to face each other. And a plurality of openings provided in the opposing protrusions Moving the plurality of engaging portions in a direction in which the opening of the protruding portion and the engaging portion engage with each other, thereby engaging the opening of the protruding portion and the engaging portion, respectively. The side surfaces of the hooking portion and the protrusion portion are covered with the inner side surface of the penetrating entrance, and the engaging portion is engaged with the opening portion of the hooking portion, whereby the wiring board and the first electrode plate are connected. A step of assembling, and a step of joining the semiconductor substrate having the assembled wiring board, the first electrode plate, and the electrode with a conductive member.

  According to the present invention, it is possible to reduce the manufacturing process even when mechanically joining without reducing the joining strength.

  A semiconductor package 1 according to a first embodiment of the present invention will be described with reference to FIGS. 1 is a perspective view showing a semiconductor package 1 according to a first embodiment of the present invention, FIG. 2 is an exploded perspective view showing the configuration of the semiconductor package 1, and FIG. 3 is an exploded perspective view showing the configuration of the semiconductor package 1. FIG. In FIGS. 1 to 3, F represents a wiring.

  As shown in FIGS. 1 to 3, the semiconductor package 1 includes a semiconductor element 10 formed in a rectangular plate shape having a first main surface 11 and a second main surface 12, and a first main surface 11 provided on the first main surface 11 side. The first electrode plate 20, the second electrode plate 30 provided on the second main surface 12 side, and the wiring substrate 40 provided between the semiconductor element 10 and the first electrode plate 20 are laminated. .

  The semiconductor element 10 is formed of a rectangular plate-shaped small semiconductor chip, for example, an IGBT element. In addition, the outer peripheral edge of the semiconductor element 10 is formed in a shape that is located inside the outer peripheral edges of the first electrode plate 20, the second electrode plate 30, and the wiring substrate 40.

  The first main surface 11 of the semiconductor element 10 includes an emitter electrode 13 formed in a range from the outer peripheral edge side to the center side periphery, and a gate electrode provided inside the emitter electrode 13 (center side of the first main surface 11). 14. A solder resistance film 15 formed so as to prevent solder flow (short circuit) between the emitter electrode 13 and the gate electrode 14 is printed on the inner peripheral edge of the emitter electrode 13 and the outer peripheral edge of the gate electrode 14. Has been. A solder resistance film 16 is formed on the outer periphery of the emitter electrode 13. Moreover, the collector electrode 17 is formed in the 2nd main surface 12 (refer FIG. 3).

  The first electrode plate 20 is provided on a first substrate body 21 formed in a rectangular plate shape with a conductive material such as copper, and one surface 21 a of the first substrate body 21, and is joined to the emitter electrode 13. And a protrusion 22 having a joint surface 22a.

  The protruding portion 22 has a substantially rectangular through hole 23 at a substantially central position, a pedestal portion 24 provided on the inner surface of the through hole 23 on the other surface 21 b side, and a through hole 23 provided on the protruding portion 22. To the outer surface of the protrusion 22 and a plurality of openings 26 provided on the side of the protrusion 22. Note that the protrusion 22 has a through hole 23 and a communication path 25, and the bonding surface 22 a bonded to the emitter electrode 13 is formed in a concave shape. The pedestal portion 24 is provided on the inner surface of the through hole 23 that faces the inner surface where the communication path 25 is provided.

  The opening 26 is, for example, the first substrate body 21 and is formed by forming a hole 27 in a cylindrical shape from the other surface 21b side of the first substrate body 21 by, for example, pressing with a mold or the like. Yes. The hole 27 is formed so as not to penetrate the protrusion 22, and is provided so that the center of the hole 27 is located on the side surface of the protrusion 22. Further, a plurality of openings 26 are provided on the outer surface where the communication passage 25 of the protrusion 22 is provided and the outer surface facing each other through the through-hole 23 (two in the present embodiment).

  The second electrode plate 30 is formed by a second substrate body 31 formed in a square plate shape with a conductive material such as copper. The second substrate body 31 is printed on the connection surface 32 facing the second main surface 12 and connected to the collector electrode 17 and on the outer peripheral side of the connection surface 32 to prevent solder flow (short circuit). And a solder resistance film 33 formed thereon.

  The wiring substrate 40 is formed of an insulating substrate 41 formed in a substantially square plate shape using glass epoxy resin, polyimide resin, or the like. The insulating substrate 41 includes a convex portion 42 provided on a part of the outer periphery of the insulating substrate 41, an inlet 43 through which the protruding portion 22 penetrates, and an inner peripheral surface of the inlet 43 so as to be continuous with the convex portion 42. And a plurality of engaging portions 45 provided at positions corresponding to the opening 26 on the inner peripheral surface of the through-hole 43.

Further, the insulating substrate 41 has a notch 46 on the outer periphery corresponding to the inner peripheral surface having the engaging portion 45 of the penetrating port 43 other than the outer peripheral portion where the convex portion 42 is provided.
The convex part 42 has an external connection terminal 47 on the semiconductor element 10 side of the convex part 42.

  The protrusion 44 has a circular tip 48 on the tip side, and the tip 48 is formed on the protrusion 22 when the first electrode plate 20 and the wiring board 40 are engaged. It is formed in a shape located in the provided through hole 23. A control electrode 49 that is electrically joined to the gate electrode 14 by a conductive member such as solder (hereinafter referred to as “solder member”) B is provided on the surface of the tip 48 that faces the semiconductor element 10. The control electrode 49 is connected to the external connection terminal 47 and a wiring F formed on the insulating substrate 41 by printing, for example.

  The engaging portion 45 is semicircular and is formed so as to be elastically deformable. The engaging portion 45 is formed so as to be engageable with the opening 26 by elastically deforming. Further, at least the tip of the engaging portion 45 is formed in a shape that is located inside the outer surface of the protrusion 22.

  The first electrode plate 20, the second electrode plate 30, and the insulating substrate 41 of the wiring substrate 40 are molded with a single mold (sequential feeding mold) by, for example, pressing.

Next, the manufacturing process of such a semiconductor package 1 will be described with reference to FIGS.
4 is a perspective view showing an example of the assembly of the first electrode plate 20 and the wiring board 40 used in the semiconductor package 1, and FIG. 5 is a diagram of the first electrode plate 20 and the wiring board 40 used in the semiconductor package 1. FIG. 6 is a cross-sectional view showing a configuration of the semiconductor package 1.

  First, as shown in FIGS. 4 and 5, the first electrode plate 20 and the wiring substrate 40 are assembled. The solder member B is welded to the control electrode 49 of the wiring board 40. Here, the solder member B may be provided by adhesion or arrangement without welding the solder member B. Further, instead of providing the solder member B at the present stage, it may be provided at the time of joining a control electrode 49 and a gate electrode 14 described later.

  Next, the first electrode plate 20 and the wiring substrate 40 are arranged so that the communication passage 25 and the through hole 23, the protruding portion 44, and the distal end portion 48 are in corresponding positions. In this state, for example, the opening 26 on the side where the communication path 25 is provided (one side) and the engaging portion 45 on the side where the protrusion 44 is provided (one side) are engaged. As a result of this engagement, as shown in FIG. 4, the other engagement portion 45 is stacked above the other (other) opening 26 (joining surface 22 a of the protrusion 22).

  In this state, the periphery of the other engaging portion 45 is pressed, or the periphery (wiring board 40) of the other engaging portion 45 is bent so that the engaging portion 45 faces the first substrate body 21. Thereby, the other engaging part 45 or the periphery of the engaging part 45 is elastically deformed, and the other engaging part 45 is engaged with the corresponding other opening part 26, respectively. Note that it is also possible to cause the engaging portion 45 to engage with the opening 26 by elastically deforming by simultaneously pressing the periphery of all the engaging portions 45.

  When pressure is applied to the periphery of the engaging portion 45, the wiring board 40 tends to move in the proximity direction substantially parallel to the one surface 21 a of the first board body 21. However, the surface of the engaging portion 45 that faces the first substrate body 21 is in contact with the joint surface 22 a of the protrusion 22. For this reason, the engaging part 45 will be in the state pressed by the joint surface 22a, and the engaging part 45 will curve by this press (interference).

  In this state, when the wiring board 40 is further pressed in the direction approaching the one surface 21a, the engaging portion 45 slides on the side surface of the protruding portion 22 in a curved state. This sliding is performed until the engaging portion 45 is positioned at the opening 26, that is, the wiring substrate 40 moves until the wiring substrate 40 substantially contacts the one surface 21a. When the wiring board 40 comes into contact with the one surface 21a, the engaging portion 45 is positioned in the opening portion 26. Therefore, when the engaging portion 45 enters the inside of the opening portion 26, the engaging portion 45 is not interfered. The shape of the joint portion 45 is restored. In this way, the engaging portion 45 is engaged with the opening portion 26.

  When the periphery of the engaging portion 45 is curved so that the engaging portion 45 faces the first substrate body 21, the engaging portion 45 does not interfere with the protruding portion 22 and the engaging portion 45 It abuts against one surface 21a. In this state, when the curve around the engaging portion 45 is released, the engaging portion 45 is restored substantially parallel to the one surface 21a, and the restored engaging portion 45 enters the opening 26. Will be engaged.

  Thus, when the engaging part 45 and the opening part 26 are engaged, the outer surface of the engaging part 45 is covered with the opening part 26. Therefore, when the first electrode plate 20 and the wiring board 40 are about to move away from each other, the outer surfaces of the engaging portions 45 and the inner surfaces of the openings 26, the outer surfaces of the protrusions 22, and the entrance 43. Interfere with each other at one location at least at any point with the inner surface. Due to this interference, for example, the horizontal direction with respect to the bonding surface 22a is locked by the side surfaces, and the engagement portion 45 and the opening portion 26 are locked in the direction orthogonal to the bonding surface 22a. There is no separation from the first electrode plate 20.

  Thus, after engaging (assembling) the first electrode plate 20 and the wiring board 40, the solder member B is disposed on the joint surface 22a and the side surface of the protrusion 22 as shown in FIG. For example, the solder member B may have a dish-like member shape that covers the joint surface 22a and the side surface of the protrusion 22 or may be a paste.

  The assembled first electrode plate 20 and wiring substrate 40 and the semiconductor element 10 are arranged so that the protrusion 22 and the control electrode 49 on which the solder member B is arranged are opposed to the emitter electrode 13 and the gate electrode 14, respectively. The first electrode plate 20 and the wiring substrate 40 opposed to each other and the semiconductor element 10 are electrically joined by melting the solder member B while applying a predetermined pressure.

  Next, the semiconductor element 10 and the second electrode plate 30 are arranged so that the collector electrode 17 and the connection surface 32 face each other. In this state, the solder member B is disposed in the solder resistance film 33 and is electrically joined by melting the solder member B while applying a predetermined pressure to the semiconductor element 10 and the second electrode plate 30.

  As described above, the semiconductor element 10, the first electrode plate 20, the second electrode plate 30, and the wiring board 40 are electrically joined by the solder member B and mechanically engaged by the engaging portion 45 and the opening portion 26. As a result, the semiconductor package 1 is formed as shown in FIG.

  According to the semiconductor package 1 configured as described above, the wiring substrate 40 includes the protruding portion 42 protruding from the outside of the other components, and the external connection terminal 47 connected to the control electrode 49 and the wiring F on the protruding portion 42. By providing the wiring, the wiring of the control electrode 49 can be drawn out of the package without using wire bonding. That is, it is possible to obtain a semiconductor package 1 whose outer shape is small and in which wiring can be drawn to the outside.

  Further, by engaging the first electrode plate 20 and the wiring board 40 with the engaging portion 45 in the opening 26, the opening 26 and the engaging portion 45, and the penetrating port 43 and the side surface of the protruding portion 22. Even if the first electrode plate 20 and the wiring substrate 40 move in the direction of separating from each other, they are locked at each position. Thus, the first electrode plate 20 and the wiring board 40 are surely engaged (assembled) without being detached.

  In addition, by providing the cutout portion 46 in the wiring board 40 (insulating substrate 41), the location where the cutout portion 46 is provided can be easily elastically deformed. As a result, when the engaging portion 45 is engaged with the opening portion 26, the periphery of the engaging portion 45 is easily deformed by finally engaging the engaging portion 45 on the side where the notch portion 46 is provided. To do. For this reason, the first electrode plate 20 and the wiring board 40 can be easily assembled.

  Furthermore, the first electrode plate 20 and the wiring board 40 can be engaged with each other only by engaging the engaging portion 45 with the opening portion 26 without performing welding. For example, there is no need to perform welding or bonding. Can be easily assembled. For example, when the first electrode plate 20 and the wiring substrate 40 are assembled by welding, the first electrode plate 20 and the wiring substrate 40 are first assembled after being aligned, and then welded. At least two steps are required. However, in the semiconductor package 1, it is only necessary to engage the engaging portion 45 and the opening 26 at the time of assembly, that is, the first electrode plate 20 and the wiring substrate 40 can be assembled in one process only of assembly. . For this reason, the manufacturing (assembly) process is reduced, and the manufacturing cost of the semiconductor package 1 is also reduced.

  Further, the first electrode plate 20 and the wiring board 40 are structured such that each of the first electrode plate 20 and the wiring board 40 can be assembled at a predetermined position by being guided by the corresponding member shapes such as the pedestal portion 24 and the distal end portion 48, the protruding portion 22 and the penetration opening 43. Thus, it is possible to prevent an assembly error or a position shift. As a result, the bonding surface 22a of the protrusion 22 and the control electrode 49 are securely and electrically connected to the emitter electrode 13 and the gate electrode 14 of the semiconductor element 10 by the solder member B or the like.

  As described above, according to the semiconductor package 1 according to the first embodiment, the first electrode plate 20 and the wiring board 40 are inserted into the protrusion 22 penetration port 43, and the engaging portion 45 is connected to the opening 26. By engaging with each other, it is possible to reliably assemble them without detaching from each other. Further, as described above, the engaging portion 45 and the opening portion 26 can be assembled simply by engaging the engaging portion 45 and the opening portion 26, and the manufacturing (assembly) man-hours can be reduced. In addition, the manufacturing cost of the semiconductor package can be reduced. Further, the configuration of the semiconductor package 1 can reduce the size.

  Furthermore, since the front end portion 48 is securely held by the pedestal portion 24 and is fixed to the gate electrode 14 by the solder member B, it can be reliably held at a predetermined position, and reliability is improved.

Next, a semiconductor package 1A according to a second embodiment of the present invention will be described with reference to FIGS.
7 is a perspective view showing a semiconductor package 1A according to a second embodiment of the present invention, FIG. 8 is an exploded perspective view showing the configuration of the semiconductor package 1A, and FIG. 9 is an exploded perspective view showing the configuration of the semiconductor package 1A. FIG. 7 to 12, the same functional parts as those in FIGS. 1 to 6 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The semiconductor package 1A includes a semiconductor element 10, a first electrode plate 50 provided on the first main surface 11 side, a second electrode plate 30 provided on the second main surface 12 side, the semiconductor element 10 and the first And a wiring board 60 provided between the electrode plates 50.

  The first electrode plate 50 includes a first substrate body 51 formed in a square plate shape with a conductive material such as copper, and a protrusion having a bonding surface 52a provided on one surface 51a of the first substrate body 51. 52.

  The projecting portion 52 is provided in the projecting portion 52, a substantially rectangular through hole 23 at a substantially central position, two pedestal portions 53 provided on the inner surface of the through hole 23 on the other surface 51 b side, and facing each other. The communication passage 25 is formed from the through hole 23 to the outer surface of the projection 52, and is provided between the pedestal 53 and the pedestal 53, and provided on the side surface of the projection 52 where the communication passage 25 is provided. In addition, a plurality of (two in the figure) openings 26 and a hooking portion 54 provided on the outer surface of the protrusion 52 facing the communication path 25 are provided.

  The hook portion 54 is formed so that its height is lower than that of the protrusion portion 52. The distance from the side surface of the protrusion portion 52 to the end surface of the hook portion 54 is the length of the hook portion 54 and the protrusion portion 52, which will be described later. It is formed so as to be equivalent to the length between corresponding inner surfaces of the penetrating inlet 62.

  The wiring substrate 60 is provided on the insulating substrate 61, and has a through-hole 62 formed so that the inner surfaces of the inner surfaces facing each other are equal to the corresponding outer surfaces of the hooking portion 54 and the protruding portion 52, and a protrusion at the tip. The protrusion part 63 which has the character-shaped front-end | tip part 64, and the two engaging parts 45 provided in the corresponding position of the opening part 26 are provided in the inner surface of the penetration port 62 in which the protrusion part 63 was provided. . The tip 64 has a control electrode 49.

Next, a method for manufacturing such a semiconductor package 1A will be described with reference to FIGS.
10 is a perspective view showing an example of the assembly of the first electrode plate 50 and the wiring board 600 used in the semiconductor package 1A, and FIG. 11 shows the first electrode plate 50 and the wiring board 60 used in the semiconductor package 1A. FIG. 12 is a cross-sectional view showing a configuration of the semiconductor package 1A.

  As shown in FIG. 10, the first electrode plate 50 and the wiring board 60 are assembled (assembled). First, the orientation of the first electrode plate 50 and the wiring board 60 is arranged such that the communication path 25 and the through hole 23, the protruding portion 63, and the distal end portion 64 are in corresponding positions. Next, in this state, the outer surface on which the hook portion 54 of the protrusion 52 is provided and the corresponding inner surface of the through-hole 62 are brought close to each other, and the wiring substrate 60 is loaded on the first electrode plate 50. . Since the penetrating port 62 has a longer length in the hooking portion 54 direction than the protruding portion 52, the engaging portion 45 is placed on the one surface 51 a of the first substrate body 51.

  In this state, the wiring board 60 is slid in a direction in which the wiring board 60 is separated from the outer surface on which the hook portion 54 of the protrusion 52 is provided, that is, in a direction in which the engaging portion 45 and the opening portion 26 are engaged. When this sliding is performed, the wiring substrate 60 (insulating substrate 61) is curved (elastically deformed) by the thickness of the hook portion 54. Further, the length of the penetrating port 62 in the sliding direction is substantially the same as the length of the protrusion 52 and the hooking portion 54, and when the engaging portion 45 and the opening 26 are engaged, the penetrating portion 54 penetrates from the hooking portion 54. The inner surface of the inlet 62 is removed. For this reason, as shown in FIG. 11, the curved wiring board 60 comes into contact with the one surface 51 a of the first electrode plate 50 by the restoring force.

  When the engaging portion 45 and the opening portion 26 are engaged and the lower surface of the wiring board 60 is in contact with the upper surface of the first electrode plate 50, the outer surface of the engaging portion 45 is covered with the opening portion 26 and the protruding portion 52. The side surface and the side surface of the hook portion 54 are covered with the inner peripheral surface of the through-hole 62. For this reason, when the first electrode plate 50 and the wiring board 60 move in a direction away from each other, each engaging portion 45 and each opening portion 26 and the outer surface of the projection portion 52 or the hooking portion 54 and the penetration port Interfere with each other on either of the inner surfaces of 62. Due to this interference, the joint surface 52a is locked by the side surfaces in the horizontal direction and by the engaging portion 45 and the opening portion 26 in the direction orthogonal to the joint surface 52a. There is no detachment from the electrode plate 50.

  The semiconductor element 10, the first electrode plate 50, the second electrode plate 30, and the wiring board 60 are joined and engaged by the solder member B, similarly to the semiconductor package 1 according to the first embodiment described above. By engaging with the portion 45 and the opening 26, the semiconductor package 1A is formed as shown in FIG.

  In such a semiconductor package 1A, the assembly of the wiring substrate 60 to the first electrode plate 50 does not require any particular pressing, and the engagement portion 45 and the opening 26 are engaged by sliding the wiring substrate 60. In addition, it is automatically assembled by the restoring force of the wiring board 60 that is further elastically deformed. For this reason, the first electrode plate 50 and the wiring substrate 60 can be easily assembled.

  In addition, since a plurality of pedestal portions 53 are provided in a direction orthogonal to the sliding direction, even when the wiring board 60 is slid, the distal end portion 64 of the protruding portion 63 is always reliably loaded on the pedestal portion 53. Become. That is, when the pedestal is provided in the sliding direction of the wiring board 60, the tip 64 is not stacked on the pedestal before the slide, and may be bent downward by its own weight. If the wiring board 60 is slid in this state, the tip surface of the tip portion 64 may come into contact with the side surface of the pedestal portion.

  If the wiring board 60 is further slid in this state, a load in the sliding direction is applied to the protruding portion 63, the protruding portion 63 is elastically deformed or plastically deformed, and the control electrode 49 may not be positioned at a predetermined position. . This misalignment of the control electrode 49 causes a bonding failure or a contact failure during the assembly of the semiconductor package 1A. For this reason, in the semiconductor package 1A, by providing a plurality of the pedestal portions 53 in the direction orthogonal to the sliding direction, it is possible to reliably hold and guide the distal end portion 64 at all times and to prevent poor bonding.

  As described above, the semiconductor package 1A according to the second embodiment has the same effect as that of the semiconductor package 1. Furthermore, the first electrode plate 50 can be more easily obtained by simply sliding the wiring board 60. And the wiring board 60 can be assembled, and the manufacturing (assembly) process and the manufacturing cost can be reduced.

Next, a semiconductor package 1B according to a modification of the present invention will be described with reference to FIG.
FIG. 13 is a perspective view showing an example of assembly of the first electrode plate 50A and the wiring board 60A of the semiconductor package 1B according to the modification of the present invention. In FIG. 13, the same functional parts as those in FIGS. 1 to 12 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The semiconductor package 1B includes the semiconductor element 10, the first electrode plate 50A provided on the first main surface 11 side, the second electrode plate 30 provided on the second main surface 12 side, the semiconductor element 10 and the first element. And a wiring board 60A provided between the electrode plates 50A.

  The hook portion 54 includes at least one opening 55 on a side surface covered with the penetrating opening 62. Further, the penetrating inlet 62 includes an engaging portion 65 that is engaged with the opening 55.

Next, a method for manufacturing such a semiconductor package 1B will be described with reference to FIG.
As shown in FIG. 13, first, similarly to the semiconductor package 1A described above, the direction in which the inner side surface of the through-hole 62 of the wiring board 60A is separated from the outer side surface where the hooking portion 54 of the protruding portion 52 is provided, that is, The engaging portion 45 and the opening 26 are slid in the engaging direction, and the engaging portion 45 and the opening 26 are engaged.

  When this sliding is performed, the lower surface of the engaging portion 65 is in contact with the upper surface of the hook portion 54, and the wiring board 60 </ b> A (insulating substrate 61) is curved (elastically deformed) by the thickness of the hook portion 54.

  In this state, the wiring board 60A around the engaging portion 65 is pressed to elastically deform the engaging portion 65, or the engaging portion 65 faces the first substrate body 51 around the engaging portion 65. Curve. That is, the engaging portion 65 is engaged with the opening 55 by elastically deforming the engaging portion 65 or the periphery of the engaging portion 65.

  The length of the through-hole 62 in the sliding direction is substantially the same as the length of the protrusion 52 and the hooking portion 54. When the engaging portions 45 and 65 are engaged with the openings 26 and 55, the hooking portion 52 is hooked. The side surface of the portion 54 and the inner side surface of the penetrating entrance 62 abut. In addition, the lower surface of the wiring board 60A comes into contact with one surface 51a of the first electrode plate 50A.

  When the engaging portions 45 and 65 are engaged with the openings 26 and 55 and the lower surface of the wiring board 60A is in contact with the upper surface of the first electrode plate 50A, the outer surfaces of the engaging portions 45 and 65 are the openings 26 and 55. And the side surface of the protrusion 52 and the side surface of the hook portion 54 are covered by the inner peripheral surface of the penetrating entrance 62. For this reason, when the first electrode plate 50 and the wiring board 60 move in a direction away from each other, the engagement portions 45 and 65, the openings 26 and 55, and the outer surface or hooking portion of the projection 52 54 and the inner surface of the penetration 62 interfere with each other. Due to this interference, the joint surface 52a is locked by the side surfaces in the horizontal direction and by the engaging portions 45, 65 and the openings 26, 55 in the direction orthogonal to the joint surface 52a. 60A does not leave the first electrode plate 50A.

  The semiconductor element 10, the first electrode plate 50, the second electrode plate 30, and the wiring board 60 are joined and engaged by the solder member B, similarly to the semiconductor package 1 according to the first embodiment described above. By engaging with the portion 45 and the opening 26, the semiconductor package 1A is formed as shown in FIG.

  In such a semiconductor package 1B, the wiring board 60A is assembled to the first electrode plate 50A by sliding the wiring board 60 so that the engaging portion 45 and the opening 26 are engaged, and further elastically deformed. It will be assembled to the opening 55 around the part 65 or the engaging part 65. Therefore, the first electrode plate 50A and the wiring board 60A can be easily assembled and can be engaged at the two opposing positions of the engaging portions 45 and 65 and the openings 26 and 55. Therefore, the first electrode plate 50A and the wiring board 60A are not separated from each other.

  Further, the inner side surface of the penetrating port 62 covers the side surfaces of the protrusion 52 and the hooking portion 54, and is further engaged by the engaging portions 45, 65 and the openings 26, 55. The wiring board 60A interferes. Therefore, the first electrode plate 50A and the wiring board 60A can be reliably assembled.

  As described above, according to the semiconductor package 1B according to the modification, the semiconductor package 1 and the semiconductor package 2A have substantially the same effects, and the first electrode plate 50A and the wiring board 60A are reliably provided in each direction. By setting it as the structure which interferes, it becomes possible to assemble | attach the 1st electrode board 50A and the wiring board 60A reliably.

  Modifications other than the above-described embodiments will be described. In the above-described example, for example, in the semiconductor packages 1 and 1A, the material of the first electrode plates 20 and 50 and the second electrode plate 30 is a copper material. However, if the material is a conductive material, for example, aluminum, molybdenum, copper-molybdenum alloy Also applicable to copper tungsten alloy and the like. Moreover, it is good also as a structure which has electroconductivity in a required location by the clad or plating of various materials different from the material of the 1st electrode plates 20 and 50, and the 2nd electrode plate 30. FIG.

  Also, the solder member B may be any solder member such as Sn—Pb eutectic solder, lead-free solder, or Pb location high temperature solder. Furthermore, a spacer may be provided between the second electrode plate 30 and the insulating substrates 40 and 60 and outside the outer peripheral edge of the semiconductor element 10. By providing the spacer, the distance between the second electrode plate 30 and the insulating substrates 40 and 60 can be kept constant, and damage to the semiconductor element 10 due to external force can be prevented.

  In addition, the protrusions 22 and 52 are provided with a through hole 23, which is the inner surface of the through hole 23, and one or a plurality of pedestal parts 24 on the other surfaces 21 b and 51 b side of the first electrode plates 20 and 50. , 53 are provided, but this may not be the pedestals 24, 53. Further, the through hole 23 may not be provided. That is, the present invention can also be applied by providing the protrusions 22 and 52 with communication paths and depressions in which the protrusions 44 and 63 and the tip portions 48 and 64 can be arranged. Furthermore, the lengths of the protrusions 44 and 63 and the positions (arrangements) of the various electrodes 13 and 14 can be set as appropriate.

  Furthermore, although the two opening portions 26 and the engaging portions 45 of the semiconductor packages 1 and 1A described above are provided on each side surface of the protruding portions 22 and 52, the number is not limited to two. Further, the shape of the opening 26 and the engaging portion 45 is not limited to a semicircular shape, but can be applied as long as it can be engaged.

  Further, in the semiconductor package 1 described above, the opening 26 is provided on the outer surface facing the through hole 23 of the protrusion 22, but it may be provided on the other side surface or on the other side surface. You may form in. Similarly, in the semiconductor package 1 </ b> A, the opening 26 may be provided on the other outer surface of the protrusion 52, or may be formed on the other side surface. At this time, the engaging portions 45 are provided on the inner surfaces of the through holes 43 and 62 corresponding to the respective openings 26.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. In addition, various inventions can be formed by appropriately combining a plurality of components disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, constituent elements over different embodiments may be appropriately combined.

1 is a perspective view showing a semiconductor package according to a first embodiment of the present invention. The disassembled perspective view which shows the structure of the semiconductor package. The disassembled perspective view which shows the structure of the semiconductor package. The perspective view which shows an example of the assembly of the 1st electrode board and wiring board which are used for the same semiconductor package. The perspective view which shows an example of the assembly of the 1st electrode board and wiring board which are used for the same semiconductor package. Sectional drawing which shows the structure of the semiconductor package. The perspective view which shows the semiconductor package which concerns on the 2nd Embodiment of this invention. The disassembled perspective view which shows the structure of the semiconductor package. The disassembled perspective view which shows the structure of the semiconductor package. The perspective view which shows an example of the assembly of the 1st electrode board and wiring board which are used for the same semiconductor package. The perspective view which shows an example of the assembly of the 1st electrode board and wiring board which are used for the same semiconductor package. Sectional drawing which shows the structure of the semiconductor package. The perspective view which shows an example of the assembly of the 1st electrode board and wiring board of the semiconductor package which concern on the modification of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor package, 10 ... Semiconductor element, 11 ... 1st main surface, 12 ... 2nd main surface, 13 ... Emitter electrode, 14 ... Gate electrode, 15, 16 ... Solder resistance film, 17 ... Collector electrode, 20 DESCRIPTION OF SYMBOLS 1st electrode plate, 21 ... 1st board | substrate body, 22 ... Protrusion part, 22a ... Joining surface, 23 ... Through-hole, 24 ... Base part, 25 ... Communication path, 26 ... Opening part, 27 ... Hole part, 30 ... 2nd electrode plate 31 ... 2nd board | substrate body, 32 ... Connection surface, 33 ... Solder resistance film, 40 ... Wiring board, 41 ... Insulating substrate, 42 ... Projection, 43 ... Penetrating entrance, 44 ... Projection, 45 ... Engagement part 46 ... notch part 47 ... external connection terminal 48 ... tip part 49 ... control electrode B ... conduction member (solder member), F ... wiring.

Claims (8)

A gate electrode provided in the center of the first main surface, an emitter electrode provided around the gate electrode on the first main surface, and a second main surface formed in a plate shape A semiconductor element having a collector electrode;
A protrusion formed on one surface opposite to the first main surface and in contact with at least a part of the emitter electrode, a through hole provided in the center of the protrusion, A pedestal portion that is a part of the inner peripheral surface and is provided on the other surface side, a communication path that is provided in the protrusion and is formed from the through hole to the outer surface of the protrusion, and an outside of the protrusion A first electrode plate having a plurality of openings provided on a side surface;
Stacked between the semiconductor element and the first electrode plate and formed in a sandwichable plate shape, a through-hole through which the protrusion penetrates, and a base end thereof provided on the inner peripheral surface of the through-hole A protrusion that is located inside the through-hole and is held by the pedestal, and extends through the communication path, and is provided at the tip of the protrusion and is electrically connected to the gate electrode. A wiring board provided with a plurality of control electrodes and an inner peripheral surface of the penetrating opening and engaging with the plurality of openings, each of which has an engaging portion positioned on the inner side of the outer surface of the protruding portion; ,
It is formed in a plate shape, a semiconductor package of the second electrode plate main surface of one of which is connected before SL to the collector electrode and the electrically, comprising: a.   2. The semiconductor package according to claim 1, wherein at least a part of the plurality of openings is provided on the outer surface facing each other with the protrusion interposed therebetween. A gate electrode formed on the center side of the first main surface, an emitter electrode provided around the gate electrode of the first main surface, and a collector provided on the second main surface A semiconductor element having an electrode;
A projecting portion that is formed in a plate shape and abuts at least a part of the emitter electrode on an opposing surface that faces the first main surface, a through hole provided in the center of the projecting portion, and an inner peripheral surface of the through hole A pedestal portion provided on a surface side opposite to the facing surface, a communication path formed in the protrusion from the through hole to the outer surface of the protrusion, and an outer surface of the protrusion A first electrode plate having at least one opening partly opened on an outer side surface of the projection part, and a hooking part provided on the outer side surface of the projection part and projecting on the opposing surface; ,
It is laminated between the semiconductor element and the first electrode plate and is formed in a sandwichable plate shape. The through- hole through which the protrusion and the hook are penetrated, and the base end of the through- hole Protruding part provided at a part of the peripheral surface, the tip of which is located inside the through hole and held by the pedestal part and extending through the communication path, the gate electrode provided at the tip of the protruding part A control electrode that is electrically connected to the opening, and an engagement portion that is provided on the inner peripheral surface of the penetrating opening and engages with the opening, the tip of which is located inside the outer surface of the protrusion. A wiring board;
It is formed in a plate shape, a semiconductor package of the second electrode plate main surface of one of which is connected before SL to the collector electrode and the electrically, comprising: a.   4. The semiconductor package according to claim 3, wherein the opening is provided on the outer surface facing the outer surface of the protrusion provided with the hook portion with the protrusion interposed therebetween. The first electrode plate further includes an opening provided on a side surface of the hook portion,
The semiconductor package according to claim 3, wherein the wiring board further includes an engaging portion that engages with an opening provided in the hook portion on an inner surface of the penetrating opening. A first electrode plate which is formed in a square shape and has a protrusion provided on one main surface, and a plurality of openings on a side surface of the protrusion; a penetration opening through which the protrusion penetrates; and A wiring board provided on an inner side surface of the penetrating hole, which engages with the plurality of openings, and has an engagement portion whose tip is located inside the outer side surface of the protrusion; And a step of disposing at a position that can be engaged,
Assembling the wiring board and the first electrode plate by engaging the plurality of engaging portions of the wiring board respectively with the plurality of openings of the first electrode plate;
A step of joining the wiring board, the first electrode plate, and the semiconductor element having electrodes to each other by a conductive member. The projection is formed in a square shape and has one main surface, and has a plurality of openings on at least one side of the projection and the side of the projection provided with the opening. A first electrode plate having a hooking portion provided on a side surface; a penetrating opening through which the protrusion and the hooking portion are inserted; and the plurality of openings on the inner side surface of the penetrating hole; Arranging a wiring board having an engaging portion located inside the outer surface of the protruding portion at a position where the opening and the engaging portion can be engaged;
Covering the side surface of the protrusion with the inner surface of the penetrating entrance, and making the plurality of openings and the plurality of engaging portions face each other;
The step of engaging the openings and the engagement portions by moving the plurality of openings and the engagement portions facing each other in a direction in which the openings and the engagement portions are engaged. When,
A step of assembling the wiring board and the first electrode plate by covering side surfaces of the hooking portion and the protrusion portion with an inner side surface of the penetrating port;
A step of joining the wiring board, the first electrode plate, and the semiconductor element having electrodes to each other by a conductive member. A protrusion formed on one main surface is formed in a square shape, and a plurality of openings are provided on at least one side of the protrusion, and a side opposite to the side of the protrusion provided with the opening. A hooking portion provided, a first electrode plate having an opening provided on a side surface of the hooking portion, a penetrating opening through which the protrusion and the hooking portion penetrate, and an inner side surface of the penetrating inlet The openings and the engaging portions engage with the plurality of openings, respectively, and the wiring board having an engaging portion whose tip is located inside the outer surface of the protrusion and the hooking portion. A step of arranging in a possible position;
Covering the side surface of the protrusion with the inner surface of the penetrating entrance, and making the plurality of openings and the plurality of engaging portions face each other;
By moving the plurality of openings and the plurality of engaging portions provided in the projecting portions facing each other in a direction in which the openings of the projecting portions and the engaging portions are engaged, Engaging each of the opening and the engaging portion;
The wiring board and the first electrode plate are assembled by covering the side surfaces of the hooking portion and the projection portion with the inner side surface of the penetrating entrance and engaging the engaging portion with the opening portion of the hooking portion. Process,
A step of joining the wiring board, the first electrode plate, and the semiconductor element having electrodes to each other by a conductive member.

Images