JP4892650B2 - 電流制御素子、記憶素子、記憶装置および電流制御素子の製造方法 - Google Patents
電流制御素子、記憶素子、記憶装置および電流制御素子の製造方法 Download PDFInfo
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 26
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019794 NbN Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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Description
(ln(1000(Cexp(αd)exp(βx))-1)/γ)2
−(ln(10000(Cexp(αd)exp(βx))-1)/γ)2/2≧0・・・・(2)
(ln(Joff(Cexp(αd)exp(βx))-1)/γ)2
−(ln(Jmin(Cexp(αd)exp(βx))-1)/γ)2/2≧0 ・・・・(4)
C=k1×D0 k2、α=−6.25×10-1、β=−11.7、γ=9.76、k1およびk2は定数である。
但し、C、α、β、γは定数
(ln(30000(Cexp(αd)exp(βx))-1)/γ)2≦V0 ・・(9)
(ln(50000(Cexp(αd)exp(βx))-1)/γ)2≦V0 ・・(10)
−(ln(10000(Cexp(αd)exp(βx))-1)/γ)2/2≧0 ・・(11)
(ln(1000(Cexp(αd)exp(βx))-1)/γ)2
−(ln(30000(Cexp(αd)exp(βx))-1)/γ)2/2≧0 ・・(12)
(ln(1000(Cexp(αd)exp(βx))-1)/γ)2
−(ln(50000(Cexp(αd)exp(βx))-1)/γ)2/2≧0 ・・(13)
C=5.23×10-4×D0 -5.26・・・・(14)
ただし、D=D0×1022atoms/cm3
の関係が得られる。
(ln(Joff(Cexp(αd)exp(βx))-1)/γ) 2
−(ln(Jmin(Cexp(αd)exp(βx))-1)/γ)2/2≧0 ・・(16)
但し、
C=k1×D0 k2、α=−6.25×10-1、β=−11.7、γ=9.76
2 電流制御素子
3 記憶素子
3a 記憶素子(選択記憶素子)
4 ビット線デコーダ
5 読み出し回路
6、7 ワード線デコーダ
11 立体交差部
20 記憶素子アレイ
21 記憶装置
30 基板
31 第2の電極
32 第1の電極
33 電流制御層
BL0〜BL3 ビット線
WL0〜WL3 ワード線
Claims (8)
- 極性が正および負の電気パルスが印加された時に流れる電流を制御する電流制御素子であって、
第1の電極と、第2の電極と、前記第1の電極および前記第2の電極間に挟まれた電流制御層とを備え、
前記電流制御層は、
SiNx(0<x≦0.85)により構成され、
水素を含有し、
前記水素の濃度をD(=D0×1022atoms/cm3)、前記電流制御層の膜厚をd(nm)、前記第1の電極と前記第2の電極との間に印加し得る電圧の最大値をV0(V)としたとき、xとDとdとV0とが下式(1)、(2)を満足する
電流制御素子。
(ln(10000(Cexp(αd)exp(βx))-1)/γ)2≦V0 ・・・・(1)
(ln(1000(Cexp(αd)exp(βx))-1)/γ)2
−(ln(10000(Cexp(αd)exp(βx))-1)/γ)2/2≧0 ・・・・(2)
但し、C=k1×D0 k2、α=−6.25×10-1、β=−11.7、γ=9.76、k1=5.23×10 -4 、k2=−5.26 - 前記水素の濃度Dは、0.75×1022(atoms/cm3)≦D≦2.0×1022(atoms/cm3)を満たす
請求項1に記載の電流制御素子。 - 前記膜厚dは、5nm以上である
請求項1または2に記載の電流制御素子。 - 前記膜厚dは、5nm以上、かつ、30nm以下である
請求項3に記載の電流制御素子。 - 前記第1の電極と前記第2の電極との間に印加し得る電圧の最大値V0は、5V以下である
請求項1から4のいずれか1項に記載の電流制御素子。 - 極性が正または負の電気パルスが印加されることによりその電気抵抗値が変化する不揮発性の抵抗変化素子と、
前記抵抗変化素子と直列に接続され、前記抵抗変化素子に前記電気パルスを印加した時に流れる電流を制御する請求項1から5のいずれか1項に記載の電流制御素子と
を備える記憶素子。 - 複数のビット線と、
前記複数のビット線に各々と立体交差する複数のワード線と、
複数の請求項6に記載の記憶素子とを備え、
前記複数の記憶素子は、前記ビット線と前記ワード線とが立体交差する各々の交点に配設され、該各々の交点において、前記記憶素子の一端がその対応する前記ビット線に、前記記憶素子の他端がその対応する前記ワード線に、各々接続されている
記憶装置。 - 第1の電極と、第2の電極と、前記第1の電極および前記第2の電極間に挟まれたSiNxにより構成される電流制御層とを備え、極性が正および負の電気パルスが印加された時に流れる電流を制御する電流制御素子の製造方法であって、
前記電流制御層の膜厚d(nm)、前記窒素組成比x、および、前記電流制御層に含有される水素の濃度D(=D0×1022atoms/cm3)を決定する設計ステップと、
前記設計ステップで決定された膜厚d、窒素組成比x、および水素の濃度Dに従って前記電流制御素子を製造する製造ステップとを含み、
前記設計ステップは、
前記電流制御素子に流すべき電流の最低の電流密度Jmin(A/cm2)、前記電流制御素子が遮断状態にあるときに前記電流制御素子に流れる電流として許容できる最大の電流密度Joff(A/cm2)、および、前記第1の電極と前記第2の電極との間に印加し得る電圧の最大値V0(V)を取得する取得ステップと、
前記取得ステップで取得された前記電流密度Jmin、前記電流密度Joff、および、前記電圧の最大値V0を用いて、下記の式(3)および式(4)を満足する範囲にある膜厚d、窒素組成比x、および水素の濃度D(=D0×1022)を決定する決定ステップとを含む
電流制御素子の製造方法。
(ln(Jmin(Cexp(αd)exp(βx))-1)/γ)2≦V0 ・・・・(3)
(ln(Joff(Cexp(αd)exp(βx))-1)/γ)2
−(ln(Jmin(Cexp(αd)exp(βx))-1)/γ)2/2≧0 ・・・・(4)
但し、
C=k1×D0 k2、α=−6.25×10-1、β=−11.7、γ=9.76、k1=5.23×10 -4 、k2=−5.26
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US20060171200A1 (en) | 2004-02-06 | 2006-08-03 | Unity Semiconductor Corporation | Memory using mixed valence conductive oxides |
US7082052B2 (en) | 2004-02-06 | 2006-07-25 | Unity Semiconductor Corporation | Multi-resistive state element with reactive metal |
US20130082232A1 (en) | 2011-09-30 | 2013-04-04 | Unity Semiconductor Corporation | Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells |
WO2010026654A1 (ja) * | 2008-09-05 | 2010-03-11 | 株式会社 東芝 | 記憶装置 |
WO2012032775A1 (ja) * | 2010-09-07 | 2012-03-15 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置の検査方法および抵抗変化型不揮発性記憶装置 |
WO2012108185A1 (ja) * | 2011-02-10 | 2012-08-16 | パナソニック株式会社 | 不揮発性記憶素子の駆動方法及び初期化方法、並びに不揮発性記憶装置 |
US20130128654A1 (en) * | 2011-06-10 | 2013-05-23 | Shinichi Yoneda | Nonvolatile memory element, method of manufacturing nonvolatile memory element, method of initial breakdown of nonvolatile memory element, and nonvolatile memory device |
EP2858118B1 (en) * | 2013-10-07 | 2016-09-14 | IMEC vzw | Selector for RRAM |
US9263675B2 (en) * | 2014-02-19 | 2016-02-16 | Micron Technology, Inc. | Switching components and memory units |
US11081396B2 (en) * | 2019-09-12 | 2021-08-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
CN113200635B (zh) * | 2021-06-17 | 2022-05-10 | 徐鸿顺 | 一种电路板蚀刻废水处理装置及方法 |
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