JP4882394B2 - Semiconductor device - Google Patents
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- JP4882394B2 JP4882394B2 JP2006019952A JP2006019952A JP4882394B2 JP 4882394 B2 JP4882394 B2 JP 4882394B2 JP 2006019952 A JP2006019952 A JP 2006019952A JP 2006019952 A JP2006019952 A JP 2006019952A JP 4882394 B2 JP4882394 B2 JP 4882394B2
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Description
本発明は、パワー半導体モジュールなどを対象に、発熱量の大きなパワー半導体素子を搭載した半導体装置に関し、詳しくは半導体素子の主面に接合する配線リード,およびその接合構造に係わる。 The present invention relates to a semiconductor device in which a power semiconductor element having a large calorific value is mounted for a power semiconductor module and the like, and more particularly to a wiring lead bonded to a main surface of a semiconductor element and a bonding structure thereof.
近年になり、パワー半導体装置の定格拡大,高密度実装化に伴い、半導体素子の発生熱を効率よく放熱することが重要課題となっている。このような要求からパッケージ内で絶縁基板に半田マウントした半導体素子の配線構造について、ワイヤボンディングに代えて通電,伝熱容量の大きなリードフレームを半導体チップの主面に接合し、該リードフレームを伝熱経路として半導体チップの発生熱を上面側からも放熱させるようにした構成のものが採用されるようになっており(例えば、特許文献1,特許文献2参照)、次にIGBTモジュールを例にその半導体装置の組立構造を図5に示す。 In recent years, it has become an important issue to efficiently dissipate the heat generated by the semiconductor elements as the rating of power semiconductor devices is increased and the mounting density is increased. In view of such demands, a lead frame having a large current and heat transfer capacity is joined to the main surface of the semiconductor chip in place of wire bonding in the wiring structure of the semiconductor element solder-mounted on the insulating substrate in the package, and the lead frame is heated. As a path, a structure in which the heat generated by the semiconductor chip is also dissipated from the upper surface side is adopted (for example, refer to Patent Document 1 and Patent Document 2). Next, an IGBT module is taken as an example. An assembly structure of the semiconductor device is shown in FIG.
図5において、1は放熱用銅ベース、2は絶縁基板(例えば、セラミックス基板2aの表,裏両面に銅箔を直接接合して導体パターン2b,2cを形成したDCB(Direct Copper Bonding)基板)、3は絶縁基板2の上にマウントしたパワー半導体チップ(IGBT)、4は半導体チップ2の上面電極(IGBTのエミッタ電極)と絶縁基板2の導体パターンとの間に配線したリードフレーム(両端にブロック状の接合脚部を形成したの二股状の導体片)、5は銅ベース1に結合したパッケージの外囲樹脂ケース、6は外部導出端子、7は外部導出端子6と絶縁基板2の上面側導体パターン2bとの間に配線したボンディングワイヤ、8は半田(ロウ材)接合層であり、銅ベース1/絶縁基板2,絶縁基板2/半導体チップ3,半導体チップ3/リードフレーム4,リードフレーム4/絶縁基板2の間がリフロー半田付け法によりSnAgCuなどの鉛フリー半田により接合されている。なお、半導体チップ2を湿気,塵などから保護するために、外囲樹脂ケース5の内部にはシリコーンゲルなどを充填して封止している。
In FIG. 5, 1 is a heat-dissipating copper base, 2 is an insulating substrate (for example, a DCB (Direct Copper Bonding) substrate in which
上記のように、配線リード材にリードフレーム4を採用することにより、該リードフレーム4を伝熱経路として半導体チップ3の発生熱を絶縁基板2に効率よく放熱することができるほか、リードフレーム4の端部に形成して半導体チップの主面に面接合した脚部がヒートスプレッダとして機能し、半導体チップ3の発生熱を受容してチップ表面の過渡的な温度上昇を低減させる。これにより、半導体チップ表面の温度勾配が小さくなり、温度サイクルなどの外的ストレスを受けて半田接合部に疲労破壊,クラックなどのダメージ発生を抑えて半導体装置の長期信頼性を向上することができる。
ところで、図5に示した従来構造の半導体装置では、半導体チップに接続する配線リードとして二股形状の導体片をリードフレーム4に採用しているが、このような異形形状の単体部品を製作するには量産加工性の面でコスト高となる。 By the way, in the semiconductor device having the conventional structure shown in FIG. 5, a bifurcated conductor piece is adopted for the lead frame 4 as a wiring lead connected to the semiconductor chip. Is expensive in terms of mass production processability.
かかる点、リードフレームを、一様な厚さの導体箔とその端部に接合してヒートスプレッダとして機能させるブロック形状の熱伝導体との2部品に分けて製作すれば前記の単体部品と比べて部品製造コストの大幅な低減が可能である。 In this respect, if the lead frame is manufactured in two parts, a conductor foil having a uniform thickness and a block-shaped heat conductor that functions as a heat spreader by joining to the end thereof, compared to the above-mentioned single part Parts manufacturing costs can be significantly reduced.
しかしながら、一方では前記のように配線リードを2部品に分けると、半導体装置のモジュール組立工程で半導体チップに接合する配線リードの半田接合箇所が図5に示した単品部品の場合に比べて多くなり、この配線リードの各部品を個別に接合すると半田付け(ロウ付け)工程が2回に増えることになる。また、この半田付け工程を1回で済ますように半導体チップの上に配線リードの2部品を重ねてリフローすると、このままでは部品間にずれが生じるなどの問題が生じて安定した品質確保が技術的にも困難である。 However, on the other hand, if the wiring lead is divided into two parts as described above, the number of solder joints of the wiring lead to be joined to the semiconductor chip in the module assembly process of the semiconductor device is larger than that in the case of the single part shown in FIG. When each component of the wiring lead is joined individually, the soldering (brazing) process is increased twice. In addition, if two parts of wiring leads are stacked on a semiconductor chip and reflowed so that this soldering process can be completed once, problems such as deviation between the parts will occur and technically ensure stable quality. It is also difficult.
本発明は上記の点に鑑みなされたものであり、量産加工性,製造コストの面で前記課題を解決して、高い放熱性能と信頼性が確保できるように配線リードおよびその接合構造を改良した半導体装置を提供することを目的とする。 The present invention has been made in view of the above points, and has solved the above problems in terms of mass production processability and manufacturing cost, and has improved the wiring lead and its joining structure so as to ensure high heat dissipation performance and reliability. An object is to provide a semiconductor device.
上記目的を達成するために、本発明によれば、絶縁基板にマウントした半導体チップの主面に配線リードを接合した半導体装置において、
前記配線リードを、前記半導体チップの主面に面接合するブロック状の熱伝導体と該熱伝導体に接続するリードフレームとの2部品に分け、かつリードフレームの端部に起立形成した突起片を熱伝導体に穿孔した貫通孔に嵌挿,固定した上で、該熱伝導体を前記半導体チップの主面に重ね合わせて載置し、この状態で前記半導体チップの主面と前記熱伝導体および突起片との間を一括してロウ接合するものとし(請求項1)、その配線リードは次記のような具体的態様で構成することができる。
(1)前記の熱伝導体を、金属、もしくは表面および貫通孔内面にメタライズを施した黒鉛系炭素材,金属フィラーを添加したエンジニアリングプラスチックの成形品で構成する(請求項2)。
(2)前記熱伝導体の貫通孔に少なくとも周面がロウ材である栓状の圧入部材をインサートして前記突起片を貫通孔内に固定した上で、該圧入部材と共に半導体チップの主面と熱伝導体および前記突起片との間を一括してロウ接合する(請求項3)。(3)前項(2)における圧入部材が、第1のロウ材の外層と前記第1のロウ材より融点の高い第2のロウ材の内層との複合構造になる(請求項4)。
(4)前項(2)における圧入部材が、第1のロウ材の外層と、前記第1のロウ材より融点の高い第2のロウ材の内層と、前記第1のロウ材および第2のロウ材よりもヤング率が低い樹脂製芯材との三層構造になる(請求項5)。
(5)前記の圧入部材は、熱伝導体の貫通孔に挿入して前記突起片を固定した状態で圧入部材の先端が熱伝導体の接合面からさらに半導体チップの主面に向けて突き出すような長さに設定する(請求項6)。
In order to achieve the above object, according to the present invention, in a semiconductor device in which a wiring lead is bonded to the main surface of a semiconductor chip mounted on an insulating substrate,
The wiring lead is divided into two parts, a block-shaped heat conductor that is surface-bonded to the main surface of the semiconductor chip and a lead frame that is connected to the heat conductor, and a protruding piece that is erected at the end of the lead frame. Is inserted into and fixed to a through-hole drilled in a heat conductor, and the heat conductor is placed on the main surface of the semiconductor chip so as to overlap with the main surface of the semiconductor chip in this state. It is assumed that the body and the projecting piece are collectively joined by brazing (Claim 1), and the wiring lead can be configured in a specific manner as described below.
(1) The heat conductor is made of a metal, or a graphite-based carbon material whose surface and through-hole inner surface are metallized, and an engineering plastic molded product to which a metal filler is added (Claim 2).
(2) A plug-like press-fitting member having at least a peripheral surface made of a brazing material is inserted into the through-hole of the heat conductor to fix the protruding piece in the through-hole, and together with the press-fitting member, the main surface of the semiconductor chip And the thermal conductor and the protruding piece are collectively brazed (Claim 3). (3) The press-fitting member in the preceding item (2) has a composite structure of an outer layer of the first brazing material and an inner layer of the second brazing material having a melting point higher than that of the first brazing material .
(4) The press-fitting member in the preceding item (2) includes an outer layer of the first brazing material, an inner layer of the second brazing material having a melting point higher than that of the first brazing material, the first brazing material and the second brazing material It has a three-layer structure with a resin core material having a Young's modulus lower than that of the brazing material .
(5) The press-fitting member is inserted into the through hole of the heat conductor and the protruding piece is fixed so that the tip of the press-fitting member protrudes further from the bonding surface of the heat conductor toward the main surface of the semiconductor chip. A long length is set (claim 6).
上記の構成によれば、次記の効果を奏する。 According to said structure, there exists the following effect.
まず、配線リードを、ヒートスプレッダとして機能するブロック状の熱伝導体と、該熱伝導体に接続するリードフレームとの2部品に分けたことで、単体部品になる従来構造の配線リード(図5参照)と比べて量産加工性が向上し、製造コストを低減できる。また、リードフレームの端部に起立形成した突起片を熱伝導体に穿孔した貫通孔に嵌挿して所定位置に固定した上で、この熱伝導体を半導体チップの主面に載置してリフロー法によりロウ接合(共晶半田,および半田以外のロウ材による接合を含む)することにより、1回のロウ付け工程で配線リードの2部品を位置ずれなしに一括して半導体チップの主面に適正に接合できる。これにより、配線リードに単体部品のリードフレームを採用した従来構成と同等な放熱性能と、品質面でも高い信頼性が得られる。 First, the wiring lead is divided into two parts, a block-shaped heat conductor functioning as a heat spreader and a lead frame connected to the heat conductor, so that a wiring lead having a conventional structure that becomes a single part (see FIG. 5). ) And mass production processability are improved, and manufacturing costs can be reduced. In addition, a protruding piece formed upright at the end of the lead frame is inserted into a through-hole drilled in the heat conductor and fixed at a predetermined position, and then the heat conductor is placed on the main surface of the semiconductor chip and reflowed. By soldering (including joining with eutectic solder and soldering material other than solder) by the soldering method, the two parts of the wiring lead can be collectively bonded to the main surface of the semiconductor chip in one brazing process without misalignment. Can be properly joined. As a result, it is possible to obtain a heat radiation performance equivalent to that of a conventional configuration in which a lead frame of a single component is adopted as the wiring lead and high reliability in terms of quality.
また、配線リードを2部品に分けて一体化したことで、熱伝導体の材質には金属のほかに低剛性の黒鉛系炭素材,樹脂の採用が可能となり、これによりロウ材の凝固収縮による残留応力,およびその後の熱サイクルに伴いロウ材接合層に加わる熱応力を低減して長期信頼性が向上する。 In addition, since the wiring lead is divided into two parts and integrated, it is possible to adopt a low-rigidity graphite-based carbon material and resin in addition to metal as the material of the heat conductor, which is due to the solidification shrinkage of the brazing material. The long-term reliability is improved by reducing the residual stress and the thermal stress applied to the brazing joint layer with the subsequent thermal cycle.
さらに、前記熱伝導体の貫通孔に、少なくとも周面がロウ材である栓状の圧入部材をインサートし、該圧入部材を介してリードフレームの突起片を貫通孔内に固定することで、リードフレームの位置決め,固定支持が一層確実となり、またロウ付けリフロー工程では圧入部材が半導体チップとのロウ接合層と一体化して確実な接合を確保できる。 Furthermore, a plug-like press-fitting member having at least a peripheral surface made of a brazing material is inserted into the through-hole of the heat conductor, and the lead frame protrusion is fixed in the through-hole through the press-fitting member. The positioning and fixing support of the frame is further ensured, and in the brazing reflow process, the press-fitting member is integrated with the brazing bonding layer with the semiconductor chip to ensure reliable bonding.
加えて、前記圧入部材を低融点ロウ材の外層と高融点ロウ材の内層との複合構造、あるいは低融点ロウ材の外層,高融点ロウ材の内層,低剛性の樹脂製芯材からなる三層構造とすることにより、ロウ付け工程では高融点ロウ材の内層が半溶融状態となって形状を保ちつつ異種材の密着度を高めることができ、さらに三層構造では低剛性の樹脂芯材が応力緩和層として働き、接合層に加わる熱応力を低減できる。 In addition, the press-fitting member is composed of a composite structure of an outer layer of a low melting point brazing material and an inner layer of a high melting point brazing material, or an outer layer of a low melting point brazing material, an inner layer of a high melting point brazing material, and a low-rigidity resin core material. By adopting a layer structure, the inner layer of the high melting point brazing material is in a semi-molten state in the brazing process, maintaining the shape and increasing the adhesion of dissimilar materials, and in the three layer structure, a low-rigidity resin core material Works as a stress relaxation layer and can reduce the thermal stress applied to the bonding layer.
また、この圧入部材を熱伝導体の貫通孔に挿入してリードフレームを固定支持した状態で、圧入部材の先端が熱伝導体の接合面からさらに半導体チップの主面に向けて突き出すような長さに設定しておくことにより、圧入部材の突き出し部分が次のロウ付けリフロー工程でスペーサの役目を果たして、半導体チップの主面と熱伝導体との間に所要厚さのロウ接合層を確保することができる。 Further, in a state where the press-fitting member is inserted into the through hole of the heat conductor and the lead frame is fixedly supported, the length of the press-fitting member protrudes from the bonding surface of the heat conductor further toward the main surface of the semiconductor chip. By setting the thickness, the protruding part of the press-fitting member will act as a spacer in the next brazing reflow process, ensuring a brazing layer with the required thickness between the main surface of the semiconductor chip and the thermal conductor. can do.
以下、本発明の実施の形態を図1〜図4に示す実施例に基づいて説明する。なお、各実施例の図中で図5に対応する部材には同じ符号を付してその説明は省略する。 Embodiments of the present invention will be described below based on the examples shown in FIGS. In the drawings of the respective embodiments, members corresponding to those in FIG.
図1(a),(b)において、(a)図は本発明による配線リード9を半導体チップ3の主面に半田接合した状態での縦断面図、(b)図は(a)における配線リード9の平面図であり、前記配線リード9は、良導電性のCu,Alなどの金属箔を図示のような網目パターンにプレス加工して形成したリードフレーム10と、該リードフレーム10の端部と後記のように結合するブロック形状の熱伝導体11との2部品で構成している。
1A and 1B, FIG. 1A is a longitudinal sectional view of a wiring lead 9 according to the present invention solder-bonded to the main surface of the
ここで、リードフレーム10の端部には、複数箇所に分散して下向きに突起片10aが起立形成されている。一方、熱伝導体11には、前記の突起片10aに対応して複数箇所に貫通孔11aが分散して穿孔されている。また、この貫通孔11aは中間から下側領域の孔11a−1が断面拡大するようにしている。
Here, at the end portion of the
なお、熱伝導体11は半導体チップ3に対するヒートスプレッダを兼ね、その材質は良導電性,良伝熱性に加えて半導体チップ3との熱膨張係数差を低く抑えるように、例えばW,Mo,Cu−W,Cu−Moなどの低膨張係数金属とし、さらに半田濡れ性を確保するために表面および貫通孔にNiめっきを施しておくのがよい。
The
次に、前記配線リード9の組立,および半導体チップ3との接合工程について説明する。まず、リードフレーム10の突起片10aを熱伝導体11の貫通孔11aに押し込んで配線リード9を一体に組み立てる。なお、この場合に導電性接着剤(例えば、エポキシ樹脂にAgフィラーを添加した接着剤)を用いて突起片10aを貫通孔11aに固着してもよい。
Next, the assembly process of the wiring lead 9 and the bonding process with the
次に、半導体チップ3(図示してないが、半導体チップ3は絶縁基板2(図5参照)にマウントされている)の上面側主面に適量の半田ペーストを塗布した上で、ここに前記のように組み立てた配線リード9の熱伝導体1を載置して重ね合わせ、この仮組立状態でリフロー炉に通炉する。これにより、溶融した半田材が図1(a)で表すように熱伝導体10の貫通孔11aおよびリードフレーム10の突起片10aとの間の隙間に隅々まで浸透し、半導体チップ3の主面とこれに接続する配線リード9のリードフレーム10,熱伝導体11との間が一括して半田接合されることになる。
Next, an appropriate amount of solder paste is applied to the upper main surface of the semiconductor chip 3 (not shown, but the
これにより、リードフレーム10は配線経路として、また熱伝導体11はリードフレーム10の固定,位置決め部材のほかにヒートスプレッダとして有効に機能し、半導体チップ3の放熱,温度勾配低減化に寄与することになる。
As a result, the
また、前記のように配線リード9をリードフレーム10と熱伝導体11との2部品に分けたことで、熱伝導体11の材質は金属に限定されることなく、黒鉛系炭素材あるいは樹脂(高耐熱性のフッ素樹脂,ポリエーテル・スルフォン(PES),ポリエーテルイミド(PEI),ポリイミド(PI),ポリエーテルケトン(PEK),ポリエーテル・エーテルケトン(PEEK)などの高耐熱性,低剛性のエンジニアリングプラスチックを採用することが可能となり、これら低剛性材質の熱伝導体11を採用することにより熱伝導体が応力緩和層として働き、周囲半田の凝固収縮時に発生する残留応力を吸収緩和することができる。なお、樹脂製の熱伝導体については、導電性を付与するために導電性の金属粒子(Cu,Al,Ag,Au,Ptなど)をフィラーとして添加し、また半田との濡れ性を確保するために熱伝導体11の表面,貫通孔11aにはNiメッキを施しておくのがよい。
Further, as described above, the wiring lead 9 is divided into two parts, that is, the
次に、本発明の請求項3に対応する実施例を図2に示す。この実施例では、先記実施例1の構成に加えて、配線リード9の組立時に熱伝導体11の貫通孔11aへ栓状の圧入部材12をインサートしてリードフレーム10の突起片10aを貫通孔内に挟持固定し、配線リード9の取扱い時にリードフレーム10が脱落することのないよう所定位置に位置決め支持するようにしている。
Next, an embodiment corresponding to claim 3 of the present invention is shown in FIG. In this embodiment, in addition to the configuration of the first embodiment, the plug-like press-fitting
ここで、圧入部材12は半田材を成形加工したものであり、続く半田接合工程で配線リード9の組立体を半導体チップ3の主面に搭載してリフロー通炉することにより、半田半田材で作られた圧入部材12が溶融して半田接合層8と一体に融合する。これにより、リードフレーム10の位置ずれ発生のおそれなしに、配線リード9を半導体チップ3の主面に的確に半田接合できる。
Here, the press-fitting
図3は、先記実施例2の応用例として本発明の請求項4に対応する実施例を示すものである。この実施例においては、圧入部材12が半導体チップ3に接合する半田材と同質な低融点ロウ材の外層12aと、芯材となる高融点ロウ材の内層12bとの複合構造になる。なお、前記外層12a,内層12bの材質としては、外層12aがSnAgCuなどの標準的な鉛フリー半田(例えば、Sn3.0Ag0.5Cu)、内層12bがSnSb,SnPb(Sn:0〜10wt%),SnAgPb(Sn:0〜10wt%、Ag:1.0〜3.0wt%)の高温半田であり、芯材となる内層12bを棒状に成形した後、その周面に低融点半田材を半田メッキして外層12aを形成する。
FIG. 3 shows an embodiment corresponding to claim 4 of the present invention as an application example of the second embodiment. In this embodiment, the press-fitting
これにより、圧入部材12を熱伝導体11の貫通孔11aにインサートして組み立てた配線リード9を半導体チップ3の主面に半田接合するリフロー工程では、圧入部材12の外層12aが半田接合層8と一体に融合してリードフレーム10の突起片10aに接合するのに対して、高融点ロウ材の内層12bは殆ど元の形状を保った半溶融状態のまま低融点の半田層と接する界面に固相拡散と固−液混相拡散が共存した形態で界面反応して一体化して高い一体化強度を確保できる。なお、前記内層12bは中空構造として多少の撓み性を持たせるようにしてもよい。
Thus, in the reflow process of soldering the wiring lead 9 assembled by inserting the press-fitting
次に、実施例3をさらに改良した本発明の請求項5,6に対応する実施例を図4に示す。この実施例では、先記実施例3の複合圧入部材12に対して、その中心部に低剛性(半田材よりもヤング率が低い)の樹脂製芯材12cを追加した三層構造になる。これにより半田リフロー工程では樹脂製の芯材12cが応力緩和層として機能し、半田の凝固収縮時に発生する残留応力を吸収緩和することができる。
Next, FIG. 4 shows an embodiment corresponding to
なお、前記の樹脂製芯材12cは、例えばフッ素樹脂,ポリエーテル・スルフォン(PES),ポリエーテルイミド(PEI),ポリイミド(PI),ポリエーテルケトン(PEK),ポリエーテル・エーテルケトン(PEEK)などの高耐熱性のエンジニアリングプラスチックであり、この圧入部材を製造するには、芯材12cとなる樹脂成型品の表面にNiコートを施した上で、その周面に高融点および低融点の半田材を順にメッキして内層12bおよび外層12aを形成する。
The resin core 12c is made of, for example, fluororesin, polyether sulfone (PES), polyetherimide (PEI), polyimide (PI), polyetherketone (PEK), polyetheretherketone (PEEK). In order to manufacture this press-fitting member, the surface of the resin molded product that becomes the core material 12c is coated with Ni, and the peripheral surface thereof has a high melting point and a low melting point solder. The materials are sequentially plated to form the
さらに、この実施例では圧入部材12を熱伝導体11の貫通孔11aにインサートした配線リード9の組立状態で、圧入部材12の先端が熱伝導体11の下面からさらに寸法hだけ突き出すように全長長さを延長している。これにより、配線リード9の組立体を半導体チップ3に載置してリフロー半田接合を行う際に、前記圧入部材12を高さ方向の位置部材として、半導体チップ3の主面と熱伝導体11の接合面との間に所要厚さhの半田接合層8を確保することができ、これにより半田接合部の品質が安定する。
Further, in this embodiment, in the assembled state of the wiring lead 9 in which the press-fitting
なお、以上の各実施例では、配線リード9を図5の絶縁基板2にマウントした半導体チップ3の上面側主面(第一主面:IGBTのエミッタ電極面)にロウ接合する構成について述べたが、配線リードを半導体チップの第二主面(IGBTのコレクタ電極面),あるいは絶縁基板の導体パターンに接合する場合にも同様に実施適用することができる。
In each of the above-described embodiments, the configuration in which the wiring lead 9 is connected to the upper surface side main surface (first main surface: the emitter electrode surface of the IGBT) of the
2 絶縁基板
3 半導体チップ
8 半田接合層
9 配線リード
10 リードフレーム
10a 突起片
11 熱伝導体
11a 貫通孔
12 圧入部材
12a 外層
12b 内層
12c 芯材(樹脂)
2 Insulating
Claims (6)
前記配線リードを、前記半導体チップの主面に面接合するブロック状の熱伝導体と該熱伝導体に接続するリードフレームとの2部品に分け、かつリードフレームの端部に起立形成した突起片を熱伝導体に穿孔した貫通孔に嵌挿,固定した上で、該熱伝導体を前記半導体チップの主面に重ね合わせて載置し、この状態で前記半導体チップの主面と前記熱伝導体および突起片との間を一括してロウ接合したことを特徴とする半導体装置。 In a semiconductor device in which wiring leads are joined to the main surface of a semiconductor chip mounted on an insulating substrate,
The wiring lead is divided into two parts, a block-shaped heat conductor that is surface-bonded to the main surface of the semiconductor chip and a lead frame that is connected to the heat conductor, and a protruding piece that is erected at the end of the lead frame. Is inserted into and fixed to a through-hole drilled in a heat conductor, and the heat conductor is placed on the main surface of the semiconductor chip so as to overlap with the main surface of the semiconductor chip in this state. A semiconductor device characterized in that a body and a projecting piece are collectively soldered together.
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