JP4882394B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP4882394B2
JP4882394B2 JP2006019952A JP2006019952A JP4882394B2 JP 4882394 B2 JP4882394 B2 JP 4882394B2 JP 2006019952 A JP2006019952 A JP 2006019952A JP 2006019952 A JP2006019952 A JP 2006019952A JP 4882394 B2 JP4882394 B2 JP 4882394B2
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semiconductor device
heat conductor
brazing material
semiconductor chip
press
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JP2007201303A (en
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祐二 飯塚
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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  • Engineering & Computer Science (AREA)
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Description

本発明は、パワー半導体モジュールなどを対象に、発熱量の大きなパワー半導体素子を搭載した半導体装置に関し、詳しくは半導体素子の主面に接合する配線リード，およびその接合構造に係わる。   The present invention relates to a semiconductor device in which a power semiconductor element having a large calorific value is mounted for a power semiconductor module and the like, and more particularly to a wiring lead bonded to a main surface of a semiconductor element and a bonding structure thereof.

近年になり、パワー半導体装置の定格拡大，高密度実装化に伴い、半導体素子の発生熱を効率よく放熱することが重要課題となっている。このような要求からパッケージ内で絶縁基板に半田マウントした半導体素子の配線構造について、ワイヤボンディングに代えて通電，伝熱容量の大きなリードフレームを半導体チップの主面に接合し、該リードフレームを伝熱経路として半導体チップの発生熱を上面側からも放熱させるようにした構成のものが採用されるようになっており（例えば、特許文献１，特許文献２参照）、次にＩＧＢＴモジュールを例にその半導体装置の組立構造を図５に示す。   In recent years, it has become an important issue to efficiently dissipate the heat generated by the semiconductor elements as the rating of power semiconductor devices is increased and the mounting density is increased. In view of such demands, a lead frame having a large current and heat transfer capacity is joined to the main surface of the semiconductor chip in place of wire bonding in the wiring structure of the semiconductor element solder-mounted on the insulating substrate in the package, and the lead frame is heated. As a path, a structure in which the heat generated by the semiconductor chip is also dissipated from the upper surface side is adopted (for example, refer to Patent Document 1 and Patent Document 2). Next, an IGBT module is taken as an example. An assembly structure of the semiconductor device is shown in FIG.

図５において、１は放熱用銅ベース、２は絶縁基板（例えば、セラミックス基板２ａの表，裏両面に銅箔を直接接合して導体パターン２ｂ，２ｃを形成したＤＣＢ（Direct Copper Bonding）基板）、３は絶縁基板２の上にマウントしたパワー半導体チップ（ＩＧＢＴ）、４は半導体チップ２の上面電極（ＩＧＢＴのエミッタ電極）と絶縁基板２の導体パターンとの間に配線したリードフレーム（両端にブロック状の接合脚部を形成したの二股状の導体片）、５は銅ベース１に結合したパッケージの外囲樹脂ケース、６は外部導出端子、７は外部導出端子６と絶縁基板２の上面側導体パターン２ｂとの間に配線したボンディングワイヤ、８は半田（ロウ材）接合層であり、銅ベース１／絶縁基板２，絶縁基板２／半導体チップ３，半導体チップ３／リードフレーム４，リードフレーム４／絶縁基板２の間がリフロー半田付け法によりＳｎＡｇＣｕなどの鉛フリー半田により接合されている。なお、半導体チップ２を湿気，塵などから保護するために、外囲樹脂ケース５の内部にはシリコーンゲルなどを充填して封止している。   In FIG. 5, 1 is a heat-dissipating copper base, 2 is an insulating substrate (for example, a DCB (Direct Copper Bonding) substrate in which conductor patterns 2b and 2c are formed by directly bonding a copper foil to the front and back surfaces of the ceramic substrate 2a). 3 is a power semiconductor chip (IGBT) mounted on the insulating substrate 2, and 4 is a lead frame (between both ends) wired between the upper surface electrode (IGBT emitter electrode) of the semiconductor chip 2 and the conductor pattern of the insulating substrate 2. A bifurcated conductor piece in which a block-like joint leg is formed) 5 is an outer resin case of the package coupled to the copper base 1, 6 is an external lead terminal, 7 is an external lead terminal 6 and the top surface of the insulating substrate 2 A bonding wire 8 is wired between the side conductor pattern 2b and a solder (brazing material) bonding layer, which is a copper base 1 / insulating substrate 2, insulating substrate 2 / semiconductor chip 3, semiconductor chip 3 / rein. Lead frame 4, between the lead frame 4 / insulating substrate 2 are joined by lead-free solder such as SnAgCu by reflow soldering method. In order to protect the semiconductor chip 2 from moisture, dust and the like, the outer resin case 5 is filled with silicone gel or the like and sealed.

上記のように、配線リード材にリードフレーム４を採用することにより、該リードフレーム４を伝熱経路として半導体チップ３の発生熱を絶縁基板２に効率よく放熱することができるほか、リードフレーム４の端部に形成して半導体チップの主面に面接合した脚部がヒートスプレッダとして機能し、半導体チップ３の発生熱を受容してチップ表面の過渡的な温度上昇を低減させる。これにより、半導体チップ表面の温度勾配が小さくなり、温度サイクルなどの外的ストレスを受けて半田接合部に疲労破壊，クラックなどのダメージ発生を抑えて半導体装置の長期信頼性を向上することができる。
特開２００５−６４４４１号公報（図１） 特開２００５−１１６７０２公報（図５） As described above, by using the lead frame 4 as the wiring lead material, the heat generated by the semiconductor chip 3 can be efficiently radiated to the insulating substrate 2 using the lead frame 4 as a heat transfer path. A leg portion formed at the end of the semiconductor chip and surface-bonded to the main surface of the semiconductor chip functions as a heat spreader, receives heat generated by the semiconductor chip 3 and reduces a transient temperature rise on the chip surface. As a result, the temperature gradient on the surface of the semiconductor chip is reduced, and the long-term reliability of the semiconductor device can be improved by suppressing the occurrence of damage such as fatigue breakdown and cracks in the solder joints due to external stress such as temperature cycling. .
Japanese Patent Laying-Open No. 2005-64441 (FIG. 1) Japanese Patent Laying-Open No. 2005-116702 (FIG. 5)

ところで、図５に示した従来構造の半導体装置では、半導体チップに接続する配線リードとして二股形状の導体片をリードフレーム４に採用しているが、このような異形形状の単体部品を製作するには量産加工性の面でコスト高となる。   By the way, in the semiconductor device having the conventional structure shown in FIG. 5, a bifurcated conductor piece is adopted for the lead frame 4 as a wiring lead connected to the semiconductor chip. Is expensive in terms of mass production processability.

かかる点、リードフレームを、一様な厚さの導体箔とその端部に接合してヒートスプレッダとして機能させるブロック形状の熱伝導体との２部品に分けて製作すれば前記の単体部品と比べて部品製造コストの大幅な低減が可能である。   In this respect, if the lead frame is manufactured in two parts, a conductor foil having a uniform thickness and a block-shaped heat conductor that functions as a heat spreader by joining to the end thereof, compared to the above-mentioned single part Parts manufacturing costs can be significantly reduced.

しかしながら、一方では前記のように配線リードを２部品に分けると、半導体装置のモジュール組立工程で半導体チップに接合する配線リードの半田接合箇所が図５に示した単品部品の場合に比べて多くなり、この配線リードの各部品を個別に接合すると半田付け（ロウ付け）工程が２回に増えることになる。また、この半田付け工程を１回で済ますように半導体チップの上に配線リードの２部品を重ねてリフローすると、このままでは部品間にずれが生じるなどの問題が生じて安定した品質確保が技術的にも困難である。   However, on the other hand, if the wiring lead is divided into two parts as described above, the number of solder joints of the wiring lead to be joined to the semiconductor chip in the module assembly process of the semiconductor device is larger than that in the case of the single part shown in FIG. When each component of the wiring lead is joined individually, the soldering (brazing) process is increased twice. In addition, if two parts of wiring leads are stacked on a semiconductor chip and reflowed so that this soldering process can be completed once, problems such as deviation between the parts will occur and technically ensure stable quality. It is also difficult.

本発明は上記の点に鑑みなされたものであり、量産加工性，製造コストの面で前記課題を解決して、高い放熱性能と信頼性が確保できるように配線リードおよびその接合構造を改良した半導体装置を提供することを目的とする。   The present invention has been made in view of the above points, and has solved the above problems in terms of mass production processability and manufacturing cost, and has improved the wiring lead and its joining structure so as to ensure high heat dissipation performance and reliability. An object is to provide a semiconductor device.

上記目的を達成するために、本発明によれば、絶縁基板にマウントした半導体チップの主面に配線リードを接合した半導体装置において、
前記配線リードを、前記半導体チップの主面に面接合するブロック状の熱伝導体と該熱伝導体に接続するリードフレームとの２部品に分け、かつリードフレームの端部に起立形成した突起片を熱伝導体に穿孔した貫通孔に嵌挿，固定した上で、該熱伝導体を前記半導体チップの主面に重ね合わせて載置し、この状態で前記半導体チップの主面と前記熱伝導体および突起片との間を一括してロウ接合するものとし（請求項１）、その配線リードは次記のような具体的態様で構成することができる。
（１）前記の熱伝導体を、金属、もしくは表面および貫通孔内面にメタライズを施した黒鉛系炭素材，金属フィラーを添加したエンジニアリングプラスチックの成形品で構成する（請求項２）。
（２）前記熱伝導体の貫通孔に少なくとも周面がロウ材である栓状の圧入部材をインサートして前記突起片を貫通孔内に固定した上で、該圧入部材と共に半導体チップの主面と熱伝導体および前記突起片との間を一括してロウ接合する（請求項３）。（３）前項（２）における圧入部材が、第１のロウ材の外層と前記第１のロウ材より融点の高い第２のロウ材の内層との複合構造になる（請求項４）。
（４）前項（２）における圧入部材が、第１のロウ材の外層と、前記第１のロウ材より融点の高い第２のロウ材の内層と、前記第１のロウ材および第２のロウ材よりもヤング率が低い樹脂製芯材との三層構造になる（請求項５）。
（５）前記の圧入部材は、熱伝導体の貫通孔に挿入して前記突起片を固定した状態で圧入部材の先端が熱伝導体の接合面からさらに半導体チップの主面に向けて突き出すような長さに設定する（請求項６）。 In order to achieve the above object, according to the present invention, in a semiconductor device in which a wiring lead is bonded to the main surface of a semiconductor chip mounted on an insulating substrate,
The wiring lead is divided into two parts, a block-shaped heat conductor that is surface-bonded to the main surface of the semiconductor chip and a lead frame that is connected to the heat conductor, and a protruding piece that is erected at the end of the lead frame. Is inserted into and fixed to a through-hole drilled in a heat conductor, and the heat conductor is placed on the main surface of the semiconductor chip so as to overlap with the main surface of the semiconductor chip in this state. It is assumed that the body and the projecting piece are collectively joined by brazing (Claim 1), and the wiring lead can be configured in a specific manner as described below.
(1) The heat conductor is made of a metal, or a graphite-based carbon material whose surface and through-hole inner surface are metallized, and an engineering plastic molded product to which a metal filler is added (Claim 2).
(2) A plug-like press-fitting member having at least a peripheral surface made of a brazing material is inserted into the through-hole of the heat conductor to fix the protruding piece in the through-hole, and together with the press-fitting member, the main surface of the semiconductor chip And the thermal conductor and the protruding piece are collectively brazed (Claim 3). (3) The press-fitting member in the preceding item (2) has a composite structure of an outer layer of the first brazing material and an inner layer of the second brazing material having a melting point higher than that of the first brazing material .
(4) The press-fitting member in the preceding item (2) includes an outer layer of the first brazing material, an inner layer of the second brazing material having a melting point higher than that of the first brazing material, the first brazing material and the second brazing material It has a three-layer structure with a resin core material having a Young's modulus lower than that of the brazing material .
(5) The press-fitting member is inserted into the through hole of the heat conductor and the protruding piece is fixed so that the tip of the press-fitting member protrudes further from the bonding surface of the heat conductor toward the main surface of the semiconductor chip. A long length is set (claim 6).

上記の構成によれば、次記の効果を奏する。   According to said structure, there exists the following effect.

まず、配線リードを、ヒートスプレッダとして機能するブロック状の熱伝導体と、該熱伝導体に接続するリードフレームとの２部品に分けたことで、単体部品になる従来構造の配線リード（図５参照）と比べて量産加工性が向上し、製造コストを低減できる。また、リードフレームの端部に起立形成した突起片を熱伝導体に穿孔した貫通孔に嵌挿して所定位置に固定した上で、この熱伝導体を半導体チップの主面に載置してリフロー法によりロウ接合（共晶半田，および半田以外のロウ材による接合を含む）することにより、１回のロウ付け工程で配線リードの２部品を位置ずれなしに一括して半導体チップの主面に適正に接合できる。これにより、配線リードに単体部品のリードフレームを採用した従来構成と同等な放熱性能と、品質面でも高い信頼性が得られる。   First, the wiring lead is divided into two parts, a block-shaped heat conductor functioning as a heat spreader and a lead frame connected to the heat conductor, so that a wiring lead having a conventional structure that becomes a single part (see FIG. 5). ) And mass production processability are improved, and manufacturing costs can be reduced. In addition, a protruding piece formed upright at the end of the lead frame is inserted into a through-hole drilled in the heat conductor and fixed at a predetermined position, and then the heat conductor is placed on the main surface of the semiconductor chip and reflowed. By soldering (including joining with eutectic solder and soldering material other than solder) by the soldering method, the two parts of the wiring lead can be collectively bonded to the main surface of the semiconductor chip in one brazing process without misalignment. Can be properly joined. As a result, it is possible to obtain a heat radiation performance equivalent to that of a conventional configuration in which a lead frame of a single component is adopted as the wiring lead and high reliability in terms of quality.

また、配線リードを２部品に分けて一体化したことで、熱伝導体の材質には金属のほかに低剛性の黒鉛系炭素材，樹脂の採用が可能となり、これによりロウ材の凝固収縮による残留応力，およびその後の熱サイクルに伴いロウ材接合層に加わる熱応力を低減して長期信頼性が向上する。   In addition, since the wiring lead is divided into two parts and integrated, it is possible to adopt a low-rigidity graphite-based carbon material and resin in addition to metal as the material of the heat conductor, which is due to the solidification shrinkage of the brazing material. The long-term reliability is improved by reducing the residual stress and the thermal stress applied to the brazing joint layer with the subsequent thermal cycle.

さらに、前記熱伝導体の貫通孔に、少なくとも周面がロウ材である栓状の圧入部材をインサートし、該圧入部材を介してリードフレームの突起片を貫通孔内に固定することで、リードフレームの位置決め，固定支持が一層確実となり、またロウ付けリフロー工程では圧入部材が半導体チップとのロウ接合層と一体化して確実な接合を確保できる。   Furthermore, a plug-like press-fitting member having at least a peripheral surface made of a brazing material is inserted into the through-hole of the heat conductor, and the lead frame protrusion is fixed in the through-hole through the press-fitting member. The positioning and fixing support of the frame is further ensured, and in the brazing reflow process, the press-fitting member is integrated with the brazing bonding layer with the semiconductor chip to ensure reliable bonding.

加えて、前記圧入部材を低融点ロウ材の外層と高融点ロウ材の内層との複合構造、あるいは低融点ロウ材の外層，高融点ロウ材の内層，低剛性の樹脂製芯材からなる三層構造とすることにより、ロウ付け工程では高融点ロウ材の内層が半溶融状態となって形状を保ちつつ異種材の密着度を高めることができ、さらに三層構造では低剛性の樹脂芯材が応力緩和層として働き、接合層に加わる熱応力を低減できる。   In addition, the press-fitting member is composed of a composite structure of an outer layer of a low melting point brazing material and an inner layer of a high melting point brazing material, or an outer layer of a low melting point brazing material, an inner layer of a high melting point brazing material, and a low-rigidity resin core material. By adopting a layer structure, the inner layer of the high melting point brazing material is in a semi-molten state in the brazing process, maintaining the shape and increasing the adhesion of dissimilar materials, and in the three layer structure, a low-rigidity resin core material Works as a stress relaxation layer and can reduce the thermal stress applied to the bonding layer.

また、この圧入部材を熱伝導体の貫通孔に挿入してリードフレームを固定支持した状態で、圧入部材の先端が熱伝導体の接合面からさらに半導体チップの主面に向けて突き出すような長さに設定しておくことにより、圧入部材の突き出し部分が次のロウ付けリフロー工程でスペーサの役目を果たして、半導体チップの主面と熱伝導体との間に所要厚さのロウ接合層を確保することができる。   Further, in a state where the press-fitting member is inserted into the through hole of the heat conductor and the lead frame is fixedly supported, the length of the press-fitting member protrudes from the bonding surface of the heat conductor further toward the main surface of the semiconductor chip. By setting the thickness, the protruding part of the press-fitting member will act as a spacer in the next brazing reflow process, ensuring a brazing layer with the required thickness between the main surface of the semiconductor chip and the thermal conductor. can do.

以下、本発明の実施の形態を図１〜図４に示す実施例に基づいて説明する。なお、各実施例の図中で図５に対応する部材には同じ符号を付してその説明は省略する。   Embodiments of the present invention will be described below based on the examples shown in FIGS. In the drawings of the respective embodiments, members corresponding to those in FIG.

図１（ａ），（ｂ）において、（ａ）図は本発明による配線リード９を半導体チップ３の主面に半田接合した状態での縦断面図、（ｂ）図は（ａ）における配線リード９の平面図であり、前記配線リード９は、良導電性のＣｕ，Ａｌなどの金属箔を図示のような網目パターンにプレス加工して形成したリードフレーム１０と、該リードフレーム１０の端部と後記のように結合するブロック形状の熱伝導体１１との２部品で構成している。   1A and 1B, FIG. 1A is a longitudinal sectional view of a wiring lead 9 according to the present invention solder-bonded to the main surface of the semiconductor chip 3, and FIG. 1B is a wiring in FIG. FIG. 2 is a plan view of the lead 9, and the wiring lead 9 is formed by pressing a metal foil such as a highly conductive Cu, Al or the like into a mesh pattern as illustrated, and an end of the lead frame 10. And a block-shaped heat conductor 11 to be coupled as described later.

ここで、リードフレーム１０の端部には、複数箇所に分散して下向きに突起片１０ａが起立形成されている。一方、熱伝導体１１には、前記の突起片１０ａに対応して複数箇所に貫通孔１１ａが分散して穿孔されている。また、この貫通孔１１ａは中間から下側領域の孔１１ａ−１が断面拡大するようにしている。   Here, at the end portion of the lead frame 10, protruding pieces 10 a are vertically formed in a distributed manner at a plurality of locations. On the other hand, in the heat conductor 11, through holes 11a are dispersed and perforated at a plurality of locations corresponding to the protruding pieces 10a. Further, the through hole 11a is configured such that the hole 11a-1 in the lower region from the middle is enlarged in cross section.

なお、熱伝導体１１は半導体チップ３に対するヒートスプレッダを兼ね、その材質は良導電性，良伝熱性に加えて半導体チップ３との熱膨張係数差を低く抑えるように、例えばＷ，Ｍｏ，Ｃｕ−Ｗ，Ｃｕ−Ｍｏなどの低膨張係数金属とし、さらに半田濡れ性を確保するために表面および貫通孔にＮｉめっきを施しておくのがよい。   The heat conductor 11 also serves as a heat spreader for the semiconductor chip 3, and the material thereof is, for example, W, Mo, Cu− so as to suppress a difference in thermal expansion coefficient from the semiconductor chip 3 in addition to good conductivity and good heat transfer. It is preferable to use a metal having a low expansion coefficient such as W or Cu—Mo, and to further apply Ni plating to the surface and the through hole in order to ensure solder wettability.

次に、前記配線リード９の組立，および半導体チップ３との接合工程について説明する。まず、リードフレーム１０の突起片１０ａを熱伝導体１１の貫通孔１１ａに押し込んで配線リード９を一体に組み立てる。なお、この場合に導電性接着剤（例えば、エポキシ樹脂にＡｇフィラーを添加した接着剤）を用いて突起片１０ａを貫通孔１１ａに固着してもよい。   Next, the assembly process of the wiring lead 9 and the bonding process with the semiconductor chip 3 will be described. First, the projecting piece 10a of the lead frame 10 is pushed into the through hole 11a of the heat conductor 11 to assemble the wiring lead 9 integrally. In this case, the protruding piece 10a may be fixed to the through hole 11a using a conductive adhesive (for example, an adhesive in which an Ag filler is added to an epoxy resin).

次に、半導体チップ３（図示してないが、半導体チップ３は絶縁基板２（図５参照）にマウントされている）の上面側主面に適量の半田ペーストを塗布した上で、ここに前記のように組み立てた配線リード９の熱伝導体１を載置して重ね合わせ、この仮組立状態でリフロー炉に通炉する。これにより、溶融した半田材が図１（ａ）で表すように熱伝導体１０の貫通孔１１ａおよびリードフレーム１０の突起片１０ａとの間の隙間に隅々まで浸透し、半導体チップ３の主面とこれに接続する配線リード９のリードフレーム１０，熱伝導体１１との間が一括して半田接合されることになる。   Next, an appropriate amount of solder paste is applied to the upper main surface of the semiconductor chip 3 (not shown, but the semiconductor chip 3 is mounted on the insulating substrate 2 (see FIG. 5)). The heat conductors 1 of the wiring leads 9 assembled as described above are placed and overlapped, and passed through the reflow furnace in this temporarily assembled state. As a result, the melted solder material penetrates into the gap between the through hole 11a of the heat conductor 10 and the protruding piece 10a of the lead frame 10 as shown in FIG. The surface and the lead frame 10 of the wiring lead 9 connected to the surface and the heat conductor 11 are soldered together.

これにより、リードフレーム１０は配線経路として、また熱伝導体１１はリードフレーム１０の固定，位置決め部材のほかにヒートスプレッダとして有効に機能し、半導体チップ３の放熱，温度勾配低減化に寄与することになる。   As a result, the lead frame 10 effectively functions as a wiring path, and the heat conductor 11 functions effectively as a heat spreader in addition to fixing and positioning members of the lead frame 10 and contributes to heat dissipation of the semiconductor chip 3 and reduction in temperature gradient. Become.

また、前記のように配線リード９をリードフレーム１０と熱伝導体１１との２部品に分けたことで、熱伝導体１１の材質は金属に限定されることなく、黒鉛系炭素材あるいは樹脂（高耐熱性のフッ素樹脂，ポリエーテル・スルフォン(ＰＥＳ)，ポリエーテルイミド(ＰＥＩ)，ポリイミド（ＰＩ），ポリエーテルケトン(ＰＥＫ)，ポリエーテル・エーテルケトン(ＰＥＥＫ)などの高耐熱性，低剛性のエンジニアリングプラスチックを採用することが可能となり、これら低剛性材質の熱伝導体１１を採用することにより熱伝導体が応力緩和層として働き、周囲半田の凝固収縮時に発生する残留応力を吸収緩和することができる。なお、樹脂製の熱伝導体については、導電性を付与するために導電性の金属粒子（Ｃｕ，Ａｌ，Ａｇ，Ａｕ，Ｐｔなど）をフィラーとして添加し、また半田との濡れ性を確保するために熱伝導体１１の表面，貫通孔１１ａにはＮｉメッキを施しておくのがよい。   Further, as described above, the wiring lead 9 is divided into two parts, that is, the lead frame 10 and the heat conductor 11, so that the material of the heat conductor 11 is not limited to a metal, but a graphite carbon material or resin ( High heat resistance, low rigidity, such as high heat-resistant fluororesin, polyether sulfone (PES), polyetherimide (PEI), polyimide (PI), polyetherketone (PEK), polyetheretherketone (PEEK) The use of these low-rigidity heat conductors 11 makes it possible for the heat conductors to act as a stress relaxation layer and absorb and relieve residual stress generated during solidification shrinkage of the surrounding solder. For resin thermal conductors, conductive metal particles (Cu, Al, Ag, Au, Pt, etc.) are used to provide conductivity. It was added as filler, and the surface of the thermal conductor 11 in order to secure the wettability with the solder, good idea subjected to Ni plating in the through hole 11a.

次に、本発明の請求項３に対応する実施例を図２に示す。この実施例では、先記実施例１の構成に加えて、配線リード９の組立時に熱伝導体１１の貫通孔１１ａへ栓状の圧入部材１２をインサートしてリードフレーム１０の突起片１０ａを貫通孔内に挟持固定し、配線リード９の取扱い時にリードフレーム１０が脱落することのないよう所定位置に位置決め支持するようにしている。   Next, an embodiment corresponding to claim 3 of the present invention is shown in FIG. In this embodiment, in addition to the configuration of the first embodiment, the plug-like press-fitting member 12 is inserted into the through hole 11a of the heat conductor 11 when the wiring lead 9 is assembled, and penetrates the protruding piece 10a of the lead frame 10. The lead frame 10 is positioned and supported at a predetermined position so that the lead frame 10 is not dropped when the wiring lead 9 is handled.

ここで、圧入部材１２は半田材を成形加工したものであり、続く半田接合工程で配線リード９の組立体を半導体チップ３の主面に搭載してリフロー通炉することにより、半田半田材で作られた圧入部材１２が溶融して半田接合層８と一体に融合する。これにより、リードフレーム１０の位置ずれ発生のおそれなしに、配線リード９を半導体チップ３の主面に的確に半田接合できる。   Here, the press-fitting member 12 is obtained by molding a solder material, and the assembly of the wiring leads 9 is mounted on the main surface of the semiconductor chip 3 in a subsequent solder bonding process, and then reflow furnace is used. The produced press-fitting member 12 is melted and united with the solder joint layer 8. As a result, the wiring lead 9 can be accurately soldered to the main surface of the semiconductor chip 3 without the possibility of displacement of the lead frame 10.

図３は、先記実施例２の応用例として本発明の請求項４に対応する実施例を示すものである。この実施例においては、圧入部材１２が半導体チップ３に接合する半田材と同質な低融点ロウ材の外層１２ａと、芯材となる高融点ロウ材の内層１２ｂとの複合構造になる。なお、前記外層１２ａ，内層１２ｂの材質としては、外層１２ａがＳｎＡｇＣｕなどの標準的な鉛フリー半田（例えば、Ｓｎ3.０Ａｇ0.５Ｃｕ）、内層１２ｂがＳｎＳｂ，ＳｎＰｂ（Ｓｎ：０〜１０ｗｔ％），ＳｎＡｇＰｂ（Ｓｎ：０〜１０ｗｔ％、Ａｇ：1.０〜３.０ｗｔ％）の高温半田であり、芯材となる内層１２ｂを棒状に成形した後、その周面に低融点半田材を半田メッキして外層１２ａを形成する。   FIG. 3 shows an embodiment corresponding to claim 4 of the present invention as an application example of the second embodiment. In this embodiment, the press-fitting member 12 has a composite structure of an outer layer 12a of a low melting point brazing material that is the same as the solder material to be joined to the semiconductor chip 3 and an inner layer 12b of a high melting point brazing material that becomes the core material. As the material of the outer layer 12a and the inner layer 12b, the outer layer 12a is a standard lead-free solder such as SnAgCu (for example, Sn3.0Ag0.5Cu), and the inner layer 12b is SnSb, SnPb (Sn: 0 to 10 wt%), SnAgPb (Sn: 0-10 wt%, Ag: 1.0-3.0 wt%) high-temperature solder, after the inner layer 12b as a core material is formed into a rod shape, a low melting point solder material is solder plated on the peripheral surface Thus, the outer layer 12a is formed.

これにより、圧入部材１２を熱伝導体１１の貫通孔１１ａにインサートして組み立てた配線リード９を半導体チップ３の主面に半田接合するリフロー工程では、圧入部材１２の外層１２ａが半田接合層８と一体に融合してリードフレーム１０の突起片１０ａに接合するのに対して、高融点ロウ材の内層１２ｂは殆ど元の形状を保った半溶融状態のまま低融点の半田層と接する界面に固相拡散と固−液混相拡散が共存した形態で界面反応して一体化して高い一体化強度を確保できる。なお、前記内層１２ｂは中空構造として多少の撓み性を持たせるようにしてもよい。   Thus, in the reflow process of soldering the wiring lead 9 assembled by inserting the press-fitting member 12 into the through hole 11a of the heat conductor 11 to the main surface of the semiconductor chip 3, the outer layer 12a of the press-fitting member 12 is the solder joint layer 8 The inner layer 12b of the high melting point brazing material is in a semi-molten state maintaining the original shape and in contact with the low melting point solder layer. High integration strength can be ensured by interfacial reaction and integration in a form in which solid phase diffusion and solid-liquid mixed phase diffusion coexist. Note that the inner layer 12b may have a hollow structure and have some flexibility.

次に、実施例３をさらに改良した本発明の請求項５，６に対応する実施例を図４に示す。この実施例では、先記実施例３の複合圧入部材１２に対して、その中心部に低剛性（半田材よりもヤング率が低い）の樹脂製芯材１２ｃを追加した三層構造になる。これにより半田リフロー工程では樹脂製の芯材１２ｃが応力緩和層として機能し、半田の凝固収縮時に発生する残留応力を吸収緩和することができる。   Next, FIG. 4 shows an embodiment corresponding to claims 5 and 6 of the present invention in which the embodiment 3 is further improved. This embodiment has a three-layer structure in which a resin core material 12c having a low rigidity (lower Young's modulus than the solder material) is added to the center portion of the composite press-fitting member 12 of the third embodiment. Thus, in the solder reflow process, the resin core 12c functions as a stress relaxation layer, and can absorb and relax the residual stress generated during the solidification shrinkage of the solder.

なお、前記の樹脂製芯材１２ｃは、例えばフッ素樹脂，ポリエーテル・スルフォン(ＰＥＳ)，ポリエーテルイミド(ＰＥＩ)，ポリイミド（ＰＩ），ポリエーテルケトン(ＰＥＫ)，ポリエーテル・エーテルケトン(ＰＥＥＫ)などの高耐熱性のエンジニアリングプラスチックであり、この圧入部材を製造するには、芯材１２ｃとなる樹脂成型品の表面にＮｉコートを施した上で、その周面に高融点および低融点の半田材を順にメッキして内層１２ｂおよび外層１２ａを形成する。   The resin core 12c is made of, for example, fluororesin, polyether sulfone (PES), polyetherimide (PEI), polyimide (PI), polyetherketone (PEK), polyetheretherketone (PEEK). In order to manufacture this press-fitting member, the surface of the resin molded product that becomes the core material 12c is coated with Ni, and the peripheral surface thereof has a high melting point and a low melting point solder. The materials are sequentially plated to form the inner layer 12b and the outer layer 12a.

さらに、この実施例では圧入部材１２を熱伝導体１１の貫通孔１１ａにインサートした配線リード９の組立状態で、圧入部材１２の先端が熱伝導体１１の下面からさらに寸法ｈだけ突き出すように全長長さを延長している。これにより、配線リード９の組立体を半導体チップ３に載置してリフロー半田接合を行う際に、前記圧入部材１２を高さ方向の位置部材として、半導体チップ３の主面と熱伝導体１１の接合面との間に所要厚さｈの半田接合層８を確保することができ、これにより半田接合部の品質が安定する。   Further, in this embodiment, in the assembled state of the wiring lead 9 in which the press-fitting member 12 is inserted into the through hole 11a of the heat conductor 11, the entire length is such that the tip of the press-fitting member 12 protrudes further from the lower surface of the heat conductor 11 by the dimension h. The length is extended. Thus, when the assembly of the wiring leads 9 is placed on the semiconductor chip 3 and reflow soldering is performed, the press-fitting member 12 is used as a position member in the height direction and the main surface of the semiconductor chip 3 and the heat conductor 11. The solder joint layer 8 having a required thickness h can be secured between the joint surface and the quality of the solder joint portion.

なお、以上の各実施例では、配線リード９を図５の絶縁基板２にマウントした半導体チップ３の上面側主面（第一主面：ＩＧＢＴのエミッタ電極面）にロウ接合する構成について述べたが、配線リードを半導体チップの第二主面（ＩＧＢＴのコレクタ電極面），あるいは絶縁基板の導体パターンに接合する場合にも同様に実施適用することができる。   In each of the above-described embodiments, the configuration in which the wiring lead 9 is connected to the upper surface side main surface (first main surface: the emitter electrode surface of the IGBT) of the semiconductor chip 3 mounted on the insulating substrate 2 in FIG. 5 has been described. However, the present invention can be similarly applied to the case where the wiring lead is bonded to the second main surface (IGBT collector electrode surface) of the semiconductor chip or the conductor pattern of the insulating substrate.

本発明の実施例１に係わる半導体装置の要部構成図であり、（ａ）は配線リードを半導体チップの主面に半田接合した状態での縦断面図、（ｂ）は（ａ）における配線リードの平面図BRIEF DESCRIPTION OF THE DRAWINGS It is a principal part block diagram of the semiconductor device concerning Example 1 of this invention, (a) is a longitudinal cross-sectional view in the state which soldered the wiring lead to the main surface of the semiconductor chip, (b) is the wiring in (a) Lead top view 本発明の実施例２に係わる配線リードの構造断面図Cross-sectional view of the structure of the wiring lead according to the second embodiment of the present invention 本発明の実施例３に係わる配線リードの構造断面図Cross-sectional view of the structure of the wiring lead according to the third embodiment of the present invention 本発明の実施例４に係わる配線リードの構造断面図Cross-sectional view of the structure of the wiring lead according to the fourth embodiment of the present invention ＩＧＢＴモジュールを例にした半導体装置の従来における組立構造図Conventional assembly structure diagram of semiconductor device taking IGBT module as example

符号の説明Explanation of symbols

２ 絶縁基板
３ 半導体チップ
８ 半田接合層
９ 配線リード
１０ リードフレーム
１０ａ 突起片
１１ 熱伝導体
１１ａ 貫通孔
１２ 圧入部材
１２ａ 外層
１２ｂ 内層
１２ｃ 芯材（樹脂） 2 Insulating substrate 3 Semiconductor chip 8 Solder bonding layer 9 Wiring lead 10 Lead frame 10a Projection piece 11 Thermal conductor 11a Through hole 12 Press-fit member 12a Outer layer 12b Inner layer 12c Core material (resin)

Claims (6)

絶縁基板にマウントした半導体チップの主面に配線リードを接合した半導体装置において、
前記配線リードを、前記半導体チップの主面に面接合するブロック状の熱伝導体と該熱伝導体に接続するリードフレームとの２部品に分け、かつリードフレームの端部に起立形成した突起片を熱伝導体に穿孔した貫通孔に嵌挿，固定した上で、該熱伝導体を前記半導体チップの主面に重ね合わせて載置し、この状態で前記半導体チップの主面と前記熱伝導体および突起片との間を一括してロウ接合したことを特徴とする半導体装置。 In a semiconductor device in which wiring leads are joined to the main surface of a semiconductor chip mounted on an insulating substrate,
The wiring lead is divided into two parts, a block-shaped heat conductor that is surface-bonded to the main surface of the semiconductor chip and a lead frame that is connected to the heat conductor, and a protruding piece that is erected at the end of the lead frame. Is inserted into and fixed to a through-hole drilled in a heat conductor, and the heat conductor is placed on the main surface of the semiconductor chip so as to overlap with the main surface of the semiconductor chip in this state. A semiconductor device characterized in that a body and a projecting piece are collectively soldered together. 請求項１に記載の半導体装置において、熱伝導体が金属、もしくは表面および貫通孔内面にメタライズを施した黒鉛系炭素材，もしくは金属フィラーを添加したエンジニアリングプラスチックの成形品であることを特徴とする半導体装置。 2. The semiconductor device according to claim 1, wherein the heat conductor is a metal, or a graphite-based carbon material having a metallized surface and an inner surface of a through hole, or an engineering plastic molded product to which a metal filler is added. Semiconductor device. 請求項１または２に記載の半導体装置において、熱伝導体の貫通孔に少なくとも周面がロウ材である栓状の圧入部材をインサートして前記突起片を貫通孔内に固定した上で、該圧入部材と共に半導体チップの主面と熱伝導体および前記突起片との間を一括してロウ接合したことを特徴とする半導体装置。 3. The semiconductor device according to claim 1, wherein a plug-like press-fitting member having at least a peripheral surface made of a brazing material is inserted into the through hole of the heat conductor and the protruding piece is fixed in the through hole. A semiconductor device characterized in that a main surface of a semiconductor chip, a heat conductor, and the protruding piece are collectively soldered together with a press-fitting member. 請求項３に記載の半導体装置において、圧入部材が、第１のロウ材の外層と前記第１のロウ材より融点の高い第２のロウ材の内層との複合構造になることを特徴とする半導体装置。 4. The semiconductor device according to claim 3, wherein the press-fitting member has a composite structure of an outer layer of the first brazing material and an inner layer of the second brazing material having a melting point higher than that of the first brazing material. Semiconductor device. 請求項３に記載の半導体装置において、圧入部材が、第１のロウ材の外層と、前記第１のロウ材より融点の高い第２のロウ材の内層と、前記第１のロウ材および第２のロウ材よりもヤング率が低い樹脂製芯材との三層構造になることを特徴とする半導体装置。 4. The semiconductor device according to claim 3, wherein the press-fitting member includes an outer layer of a first brazing material, an inner layer of a second brazing material having a melting point higher than that of the first brazing material, the first brazing material and the first brazing material. A semiconductor device having a three-layer structure with a resin core material having a Young's modulus lower than that of No. 2 brazing material . 請求項３ないし５のいずれかの項に記載の半導体装置において、圧入部材は、熱伝導体の貫通孔に挿入して前記突起片を固定した状態で圧入部材の先端が熱伝導体の接合面からさらに半導体チップの主面に向けて突き出すような長さに設定したことを特徴とする半導体装置。 6. The semiconductor device according to claim 3, wherein the press-fitting member is inserted into the through hole of the heat conductor and the protruding piece is fixed, and the tip of the press-fitting member is a bonding surface of the heat conductor. Further, the semiconductor device is set to a length that protrudes toward the main surface of the semiconductor chip.
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