JP5953790B2 - Semiconductor device and manufacturing method of semiconductor device - Google Patents
Semiconductor device and manufacturing method of semiconductor device Download PDFInfo
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- JP5953790B2 JP5953790B2 JP2012028239A JP2012028239A JP5953790B2 JP 5953790 B2 JP5953790 B2 JP 5953790B2 JP 2012028239 A JP2012028239 A JP 2012028239A JP 2012028239 A JP2012028239 A JP 2012028239A JP 5953790 B2 JP5953790 B2 JP 5953790B2
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48111—Disposition the wire connector extending above another semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Description
本発明は、絶縁基板上に形成された回路パターンを構成する金属層に、外部端子が接続された半導体装置及びその製造方法に関する。 The present invention relates to a semiconductor device in which external terminals are connected to a metal layer constituting a circuit pattern formed on an insulating substrate, and a method for manufacturing the same.
ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）等のパワー半導体素子等をモジュール化した半導体装置は、例えば図１８に示すパッケージ構造をなしている。 A semiconductor device in which a power semiconductor element or the like such as an IGBT (Insulated Gate Bipolar Transistor) is modularized has a package structure shown in FIG. 18, for example.
図１８に示す半導体装置は、樹脂ケース５２の底部に、冷却板５１が配設されている。冷却板５１上には、絶縁基板５３の両面に金属層５４，５５が接合した絶縁配線基板５６が配設され、はんだ層５７ａを介して、絶縁配線基板５６の金属層５５と、冷却板５１とが接合している。絶縁配線基板５６上には、半導体素子５８が配設され、はんだ層５７ｂを介して、絶縁配線基板５６の金属層５４と、半導体素子５８とが接合している。また、絶縁配線基板５６上には外部端子５９が配設され、はんだ層５７ｃを介して絶縁配線基板５６の金属層５４と、外部端子５９とが接合している。各半導体素子５８は、ボンディングワイヤ６０により、外部端子５９と電気的に接続している。そして、樹脂ケース５２の内部には、封止樹脂６１が充填されて封止されている。 In the semiconductor device shown in FIG. 18, a cooling plate 51 is disposed at the bottom of the resin case 52. On the cooling plate 51, an insulating wiring substrate 56 in which metal layers 54 and 55 are bonded to both surfaces of the insulating substrate 53 is disposed, and the metal layer 55 of the insulating wiring substrate 56 and the cooling plate 51 are interposed via a solder layer 57a. And are joined. A semiconductor element 58 is disposed on the insulated wiring board 56, and the metal layer 54 of the insulated wiring board 56 and the semiconductor element 58 are joined via a solder layer 57b. Further, external terminals 59 are disposed on the insulating wiring board 56, and the metal layer 54 of the insulating wiring board 56 and the external terminals 59 are joined via the solder layer 57c. Each semiconductor element 58 is electrically connected to the external terminal 59 by a bonding wire 60. The inside of the resin case 52 is filled with a sealing resin 61 and sealed.
図１８に記載されるように、従来の半導体装置においては、はんだ等の接続材を用いて、絶縁配線基板の金属層上に外部端子を接合している。そして、図１８や特許文献１等に記載されるように、はんだ接合の際に外部端子を固定保持してはんだ付けし易くするため、樹脂ケースと外部端子とを予め一体化したものを用いて、絶縁配線基板の金属層上に外部端子を接合している。 As shown in FIG. 18, in a conventional semiconductor device, an external terminal is joined on a metal layer of an insulated wiring board using a connecting material such as solder. Then, as described in FIG. 18, Patent Document 1 and the like, in order to facilitate the soldering by fixing and holding the external terminal at the time of soldering, a resin case and an external terminal integrated in advance are used. The external terminals are bonded on the metal layer of the insulated wiring board.
また、特許文献２には、絶縁配線基板に筒状外部端子連結部を接合し、該外部端子連結部に外部端子を挿入して、絶縁配線基板と外部端子とを接続することが記載されている。 Patent Document 2 describes that a cylindrical external terminal connecting portion is joined to an insulated wiring board, an external terminal is inserted into the external terminal connecting portion, and the insulated wiring board and the external terminal are connected. Yes.
しかしながら、はんだ等の接続材を用いて絶縁配線基板の金属層上に外部端子を接合する場合、回路基板に、半導体素子をはんだ付けする工程と、外部端子をはんだ付けする工程とをそれぞれ別々に行う必要があり、はんだ付け工程が煩雑となるという問題があった。 However, when joining external terminals onto the metal layer of the insulated wiring board using a connecting material such as solder, the process of soldering the semiconductor element to the circuit board and the process of soldering the external terminals are separately performed. There is a problem that the soldering process becomes complicated.
また、絶縁配線基板の金属層上に外部端子を接合する際に、外部端子が固定保持されていないと、位置ずれ等が生じ易く外部端子の接合精度に問題があった。樹脂ケースと外部端子とを予め一体化したものを用いることで、外部端子が固定保持された状態ではんだ接合でき、接合時における位置ずれを抑えることができるものの、この場合、樹脂ケースと外部端子とを一体化させる工程が増えるので、製造工程が煩雑化し、製造コストが嵩む問題があった。 Further, when the external terminal is joined to the metal layer of the insulated wiring board, if the external terminal is not fixed and held, there is a problem in the joining accuracy of the external terminal that is likely to cause a positional shift or the like. By using a resin case and external terminal integrated in advance, soldering can be performed with the external terminal fixed and held, and displacement during bonding can be suppressed. In this case, however, the resin case and external terminal As the number of steps for integrating them increases, the manufacturing process becomes complicated and the manufacturing cost increases.
また、特許文献２においても、はんだ等の接続材を用いて絶縁配線基板と筒状外部端子連結部とを接合しているので、半導体装置の製造時におけるはんだ付け工程の簡略化を図ることはできなかった。また、筒状外部端子を絶縁配線基板上に接合する際に、筒状外部端子が固定保持されていないと位置ずれ等が生じる恐れがあり、外部端子の接合精度が損なわれるおそれがあった。更には、特許文献２に開示された方法では、筒状外部端子連結部を別途用意する必要があるので、部品点数が嵩み、材料コストが嵩む問題があった。 Also in Patent Document 2, since the insulating wiring board and the cylindrical external terminal connecting portion are joined using a connecting material such as solder, it is possible to simplify the soldering process in manufacturing the semiconductor device. could not. Further, when the cylindrical external terminal is bonded onto the insulated wiring board, there is a possibility that a positional shift or the like may occur if the cylindrical external terminal is not fixed and held, and the bonding accuracy of the external terminal may be impaired. Furthermore, in the method disclosed in Patent Document 2, since it is necessary to prepare a cylindrical external terminal connecting portion separately, there is a problem that the number of parts increases and the material cost increases.
よって、本発明の目的は、製造時におけるはんだ付け工程を簡略化でき、外部端子の接合精度に優れた半導体装置及び半導体装置の製造方法を提供することにある。 Therefore, an object of the present invention is to provide a semiconductor device and a method for manufacturing the semiconductor device that can simplify the soldering process at the time of manufacturing and have excellent joining accuracy of external terminals.
上記目的を達成するため、本発明の半導体装置は、絶縁基板上に形成された回路パターンを構成する金属層に穴を形成し、この穴に外部端子を圧入することによって、前記外部端子が前記金属層に接続されており、前記外部端子と前記穴との接触部における、前記外部端子と直交する方向の断面において、前記外部端子が、前記穴の内周に対し４０％以上接触していることを特徴とする。 In order to achieve the above object, in the semiconductor device of the present invention, a hole is formed in a metal layer constituting a circuit pattern formed on an insulating substrate, and an external terminal is press-fitted into the hole, whereby the external terminal is The external terminal is in contact with the inner periphery of the hole at 40% or more in a cross section in a direction orthogonal to the external terminal at a contact portion between the external terminal and the hole. It is characterized by that.
本発明の半導体装置によれば、絶縁基板上に形成された回路パターンを構成する金属層に穴を形成し、この穴に外部端子を圧入して両者が接合されているので、接合時における位置ずれが生じ難く、外部端子の位置精度が良好で、かつ、金属層と外部端子とのはんだ付け工程を省略することもできる。また、外部端子と穴との接触部における、外部端子と直交する方向の断面において、外部端子が、穴の内周に対し４０％以上接触しているので、導電性や、外部端子と金属層との接合強度が良好である。 According to the semiconductor device of the present invention, the hole is formed in the metal layer constituting the circuit pattern formed on the insulating substrate, and the external terminal is press-fitted into the hole so that the both are bonded. Misalignment hardly occurs, the positional accuracy of the external terminal is good, and the soldering process between the metal layer and the external terminal can be omitted. In addition, in the cross section in the direction perpendicular to the external terminal at the contact portion between the external terminal and the hole, the external terminal is in contact with the inner periphery of the hole by 40% or more. Bonding strength with is good.
本発明の半導体装置は、前記外部端子の前記穴への圧入部に、絞り加工により外周に突出した突起部が設けられ、この突起部が前記穴の内周面に接触していることが好ましい。この態様においては、前記圧入前の状態で、前記外部端子の圧入部の最大径から、前記穴の内径を引いた値が、０〜０．２５ｍｍであることが好ましい。 In the semiconductor device of the present invention, it is preferable that a protrusion protruding to the outer periphery by drawing is provided at a press-fitting portion of the external terminal into the hole, and the protrusion is in contact with the inner peripheral surface of the hole. . In this aspect, it is preferable that a value obtained by subtracting the inner diameter of the hole from the maximum diameter of the press-fitted portion of the external terminal in a state before the press-fitting is 0 to 0.25 mm.
本発明の半導体装置は、前記外部端子の前記穴への圧入部に、絞り加工のないストレートな柱状部が設けられ、この柱状部の少なくとも一部が前記穴の内周面に接触していることが好ましい。この態様においては、前記圧入前の状態で、前記外部端子の圧入部の最大径から、前記穴の内径を引いた値が、０〜０．１５ｍｍであることが好ましい。 In the semiconductor device of the present invention, a straight columnar portion without drawing is provided in the press-fitting portion of the external terminal into the hole, and at least a part of the columnar portion is in contact with the inner peripheral surface of the hole. It is preferable. In this aspect, it is preferable that the value obtained by subtracting the inner diameter of the hole from the maximum diameter of the press-fitted portion of the external terminal in a state before the press-fitting is 0 to 0.15 mm.
上記各態様によれば、外部端子と金属層との接合強度をより向上でき、金属層からの外部端子の抜けをより確実に防止できる。 According to each said aspect, the joint strength of an external terminal and a metal layer can be improved more, and the disconnection of the external terminal from a metal layer can be prevented more reliably.
本発明の半導体装置は、前記穴の内周が、前記外部端子の圧入部に適合する穴形状をなしていることが好ましい。この態様によれば、外部端子の、穴の内周に対する接触面積を大きくできるので、導電性や、外部端子と金属層との接合強度が良好である。 In the semiconductor device of the present invention, it is preferable that the inner periphery of the hole has a hole shape that matches the press-fit portion of the external terminal. According to this aspect, since the contact area of the external terminal with respect to the inner periphery of the hole can be increased, the electrical conductivity and the bonding strength between the external terminal and the metal layer are good.
本発明の半導体装置は、前記外部端子の前記穴側の先端は、先端に向かってテーパ状に縮径していることが好ましい。この態様によれば、外部端子の圧入時における中心位置の調整が容易となり、外部端子を金属層に圧入し易くできる。 In the semiconductor device of the present invention, it is preferable that a tip of the external terminal on the hole side is tapered toward the tip. According to this aspect, it is easy to adjust the center position when the external terminal is press-fitted, and the external terminal can be easily press-fitted into the metal layer.
本発明の半導体装置は、前記外部端子の前記穴への圧入部表面及び／又は前記穴の内周面に、メッキ層が設けられ、前記外部端子を前記穴に圧入した状態で加熱して前記メッキ層を溶融させて、該メッキ層により前記外部端子と前記穴とが接合されているか、あるいは、前記外部端子の前記穴への圧入部表面及び／又は前記穴の内周面に、焼結材が塗布されており、前記外部端子を前記穴に圧入した状態で加熱して前記焼結材を焼結させて、前記外部端子と前記穴とが接合されていることが好ましい。この態様によれば、外部端子と金属層との接合強度をより向上でき、金属層からの外部端子の抜けをより確実に防止できる。 In the semiconductor device of the present invention, a plating layer is provided on the surface of the press-fitting portion of the external terminal into the hole and / or the inner peripheral surface of the hole, and the external terminal is heated while being press-fitted into the hole. The plating layer is melted, and the external terminal and the hole are joined by the plating layer, or sintered on the surface of the press-fitted portion of the external terminal into the hole and / or the inner peripheral surface of the hole. Preferably, a material is applied, and the external terminal and the hole are joined by heating the external terminal in a state of being press-fitted into the hole to sinter the sintered material. According to this aspect, the bonding strength between the external terminal and the metal layer can be further improved, and the disconnection of the external terminal from the metal layer can be more reliably prevented.
本発明の半導体装置の前記外部端子は、その軸方向途中に絞り加工が施されて凹み部が設けられており、この凹み部が封止樹脂で覆われて、前記半導体装置が封止樹脂で封入されていることが好ましい。この態様によれば、外部端子の凹み部が封止樹脂で覆われるので、外部端子の金属層に対する引き抜き強度を向上させることができ、金属層からの外部端子の抜けを一層確実に防止することができる。 The external terminal of the semiconductor device of the present invention is drawn in the middle in the axial direction to be provided with a recess, the recess is covered with a sealing resin, and the semiconductor device is made of a sealing resin. It is preferable that it is enclosed. According to this aspect, since the recessed portion of the external terminal is covered with the sealing resin, it is possible to improve the pull-out strength of the external terminal with respect to the metal layer, and more reliably prevent the external terminal from coming off from the metal layer. Can do.
また、本発明の半導体装置の製造方法は、絶縁基板上に形成された回路パターンを構成する金属層に、外部端子が接続された半導体装置の製造方法であって、
絶縁基板上に形成された回路パターンを構成する金属層に穴を形成し、この穴に外部端子を圧入して、前記外部端子と前記穴との接触部における、前記外部端子と直交する方向の断面において、前記外部端子を前記穴の内周に対し４０％以上接触させることを特徴とする。
The semiconductor device manufacturing method of the present invention is a method for manufacturing a semiconductor device in which an external terminal is connected to a metal layer constituting a circuit pattern formed on an insulating substrate,
A hole is formed in the metal layer constituting the circuit pattern formed on the insulating substrate, the external terminal is press-fitted into the hole, and the contact portion between the external terminal and the hole is in a direction perpendicular to the external terminal. In the cross section, the external terminal is brought into contact with the inner periphery of the hole by 40% or more.
本発明の半導体装置の製造方法によれば、絶縁基板上に形成された回路パターンを構成する金属層に穴を形成し、この穴に外部端子を圧入して両者を接合するので、接合時における位置ずれが生じ難く、外部端子を金属層の所望の位置に精度よく接合できる。また、外部端子と穴との接触部における、外部端子と直交する方向の断面において、外部端子が、穴の内周に対し４０％以上接触させるので、外部端子を金属層にはんだ付けしなくても、導電性や、外部端子と金属層との接合強度が良好である。 According to the method for manufacturing a semiconductor device of the present invention, a hole is formed in a metal layer constituting a circuit pattern formed on an insulating substrate, and an external terminal is press-fitted into the hole to join both. Misalignment hardly occurs, and the external terminal can be accurately joined to a desired position of the metal layer. In addition, in the cross section in the direction perpendicular to the external terminal at the contact portion between the external terminal and the hole, the external terminal is brought into contact with the inner periphery of the hole by 40% or more. However, the electrical conductivity and the bonding strength between the external terminal and the metal layer are good.
本発明の半導体装置の製造方法は、前記外部端子の前記穴への圧入部表面及び／又は前記穴の内周面に、メッキ層を形成しておき、前記外部端子を前記穴に圧入すると共に、前記金属層上に半導体素子を配置し、その状態でリフロー炉に入れて加熱することにより、前記半導体素子と前記金属層とを接合させると共に、前記メッキ層を溶融させて該メッキ層により前記外部端子と前記穴とを接合させることが好ましい。この態様によれば、外部端子と金属層とをより強固に接合できる。 In the method for manufacturing a semiconductor device of the present invention, a plating layer is formed on the surface of the press-fitting portion of the external terminal into the hole and / or the inner peripheral surface of the hole, and the external terminal is press-fitted into the hole. The semiconductor element is disposed on the metal layer, and in that state, the semiconductor element is placed in a reflow furnace and heated to join the semiconductor element and the metal layer, and the plating layer is melted to allow the plating layer to It is preferable to join the external terminal and the hole. According to this aspect, the external terminal and the metal layer can be joined more firmly.
本発明の半導体装置の製造方法は、前記外部端子の前記穴への圧入部表面及び／又は前記穴の内周面に、焼結材を塗布しておき、前記外部端子を前記穴に圧入すると共に、前記金属層上に半導体素子を配置し、その状態でリフロー炉に入れて加熱することにより、前記半導体素子と前記金属層とを接合させると共に、前記焼結材を焼結させて前記外部端子と前記穴とを接合させることが好ましい。この態様によれば、外部端子と金属層とをより強固に接合できる。 In the method for manufacturing a semiconductor device of the present invention, a sintered material is applied to the surface of the press-fitting portion of the external terminal into the hole and / or the inner peripheral surface of the hole, and the external terminal is press-fitted into the hole. In addition, a semiconductor element is disposed on the metal layer, and in that state, the semiconductor element is placed in a reflow furnace and heated to join the semiconductor element and the metal layer, and to sinter the sintered material, thereby It is preferable to join the terminal and the hole. According to this aspect, the external terminal and the metal layer can be joined more firmly.
本発明の半導体装置の製造方法は、前記外部端子の軸方向途中に絞り加工を施して、凹み部を形成しておき、前記半導体素子と前記金属層とを接合させ且つ前記外部端子を前記穴に圧入して接合した後、前記外部端子の凹み部が封止樹脂で覆われるように、封止樹脂を充填して前記半導体装置を封入することが好ましい。この態様によれば、外部端子の凹み部が封止樹脂で覆われるので、外部端子の金属層に対する引き抜き強度を向上させることができ、金属層からの外部端子の抜けを一層確実に防止することができる。 In the method of manufacturing a semiconductor device according to the present invention, a drawing process is performed in the axial direction of the external terminal to form a recess, the semiconductor element and the metal layer are joined, and the external terminal is connected to the hole. It is preferable to encapsulate the semiconductor device by filling it with sealing resin so that the recesses of the external terminals are covered with the sealing resin after being press-fitted into and joined. According to this aspect, since the recessed portion of the external terminal is covered with the sealing resin, it is possible to improve the pull-out strength of the external terminal with respect to the metal layer, and more reliably prevent the external terminal from coming off from the metal layer. Can do.
本発明によれば、製造時におけるはんだ付け工程を簡略化でき、外部端子の接合精度、接合強度に優れ、かつ、導電性に優れた半導体装置を生産性よく製造できる。 ADVANTAGE OF THE INVENTION According to this invention, the soldering process at the time of manufacture can be simplified, the semiconductor device excellent in the joining precision and joining strength of the external terminal, and excellent in electroconductivity can be manufactured with high productivity.
本発明の半導体装置について図面を参照して説明する。図１には、本発明の半導体装置の第１実施形態が示されている。 A semiconductor device of the present invention will be described with reference to the drawings. FIG. 1 shows a first embodiment of a semiconductor device of the present invention.
この半導体装置は、樹脂ケース２の底部に、冷却板１が配設されている。冷却板１は、放熱性の高い材料で構成される。例えば、銅、アルミニウム、銅合金、アルミニウム合金などが挙げられる。 In this semiconductor device, a cooling plate 1 is disposed at the bottom of a resin case 2. The cooling plate 1 is made of a material with high heat dissipation. For example, copper, aluminum, a copper alloy, an aluminum alloy, etc. are mentioned.
冷却板１上には、絶縁配線基板３が配設されている。絶縁配線基板３は、絶縁基板４の両面に金属層５，６が接合してなるものであって、金属層５によって、絶縁基板４上に所定の回路パターンが形成されている。そして、絶縁配線基板３の金属層６と、冷却板１とが、はんだ層７ａを介して接合している。 An insulated wiring board 3 is disposed on the cooling plate 1. The insulating wiring board 3 is formed by bonding metal layers 5 and 6 to both surfaces of the insulating substrate 4, and a predetermined circuit pattern is formed on the insulating substrate 4 by the metal layer 5. And the metal layer 6 of the insulated wiring board 3 and the cooling plate 1 are joined via the solder layer 7a.
絶縁配線基板３としては、特に限定は無いが、例えば、セラミック基板上に銅板を直接接合させたＤｉｒｅｃｔ Ｂｏｎｄｉｎｇ Ｃｏｐｐｅｒ基板や、セラミックスと銅板とをろう材を介して接合したＡｃｔｉｖｅ Ｍｅｔａｌ Ｂｒａｚｅｄ Ｃｏｐｐｅｒ基板等が挙げられる。 The insulating wiring substrate 3 is not particularly limited, and examples thereof include a Direct Bonding Copper substrate in which a copper plate is directly bonded on a ceramic substrate, and an Active Metal Brazed Copper substrate in which ceramic and a copper plate are bonded via a brazing material. Can be mentioned.
絶縁配線基板３の回路パターンを構成する金属層５の所定箇所には、外部端子２０が接合している。また、同金属層５には、半導体素子８が、はんだ層７ｂを介して接合している。半導体素子８は、用途により異なるが、例えば、ＩＧＢＴ等のパワー半導体素子、ＦＷＤ等の整流素子等が挙げられる。この実施形態では、各半導体素子８は、ボンディングワイヤ９を介して、外部端子２０と電気的に接続している。そして、樹脂ケース２の内部には、ゲル、エポキシ樹脂などの封止樹脂１０が充填されて、封止樹脂１０で封止されている。 An external terminal 20 is bonded to a predetermined portion of the metal layer 5 constituting the circuit pattern of the insulated wiring board 3. Further, the semiconductor element 8 is joined to the metal layer 5 via the solder layer 7b. Although the semiconductor element 8 changes with uses, for example, power semiconductor elements, such as IGBT, rectifier elements, such as FWD, etc. are mentioned. In this embodiment, each semiconductor element 8 is electrically connected to the external terminal 20 via the bonding wire 9. The inside of the resin case 2 is filled with a sealing resin 10 such as gel or epoxy resin and sealed with the sealing resin 10.
絶縁配線基板３の金属層５と、外部端子２０との接合部分について、図２を用いて更に詳細に説明する。 The joint portion between the metal layer 5 of the insulated wiring board 3 and the external terminal 20 will be described in more detail with reference to FIG.
図２に示されるように、絶縁配線基板３の金属層５には、外部端子２０が圧入される外部端子接続穴５ａが形成されており、該外部端子接続穴５ａに外部端子２０が圧入されて、絶縁配線基板３の金属層５と、外部端子２０とが接合している。すなわち、本発明の半導体装置においては、外部端子２０と金属層５とが、はんだ付け工程を経ずに接合されている。 As shown in FIG. 2, an external terminal connection hole 5a into which the external terminal 20 is press-fitted is formed in the metal layer 5 of the insulated wiring board 3, and the external terminal 20 is press-fitted into the external terminal connection hole 5a. Thus, the metal layer 5 of the insulated wiring board 3 and the external terminal 20 are joined. That is, in the semiconductor device of the present invention, the external terminal 20 and the metal layer 5 are joined without undergoing a soldering process.
外部端子２０と外部端子接続穴５ａとの接触部５ｂにおける、外部端子２０と直交する方向の断面、すなわち、図２の接触部５ｂにおけるＢ−Ｂ断面において、外部端子２０は、外部端子接続穴５ａの内周に対し４０％以上接触していることが必要である。外部端子の接触面積が４０％未満であると、接合強度や導電性が不十分である。接触面積が４０％以上であれば、十分な接合強度と導電性が得られる。 In the cross section in the direction orthogonal to the external terminal 20 in the contact portion 5b between the external terminal 20 and the external terminal connection hole 5a, that is, in the BB cross section in the contact portion 5b in FIG. It is necessary to contact 40% or more with respect to the inner periphery of 5a. When the contact area of the external terminal is less than 40%, the bonding strength and conductivity are insufficient. If the contact area is 40% or more, sufficient bonding strength and conductivity can be obtained.
外部端子２０の形状は、特に限定は無い。円柱状、角柱状等いずれの形状のものを用いることができる。また、外部端子２０の外部端子接続穴５ａへの圧入部の形状は、例えば、図３〜６に示す形状をなすものなどを好ましく用いることができる。 The shape of the external terminal 20 is not particularly limited. Any shape such as a columnar shape or a prismatic shape can be used. Further, as the shape of the press-fitting portion of the external terminal 20 into the external terminal connection hole 5a, for example, the shape shown in FIGS. 3 to 6 can be preferably used.
図３に示される外部端子２０ａは、絞り加工のないストレートな柱状部２１からなる圧入部と、該圧入部から先端に向かってテーパ状に縮径している縮径部２３とを備えている。この外部端子２０ａを、外部端子接続穴５ａに圧入すると、柱状部２１が、外部端子接続穴５ａの内周面に接触して両者が接合する。また、先端がテーパ状に縮径しているので、外部端子２０ａを外部端子接続穴５ａに圧入する際に中心位置の調整が容易となり、圧入し易い。 The external terminal 20a shown in FIG. 3 includes a press-fit portion composed of a straight columnar portion 21 that is not drawn and a diameter-reduced portion 23 that is tapered from the press-fit portion toward the tip. . When the external terminal 20a is press-fitted into the external terminal connection hole 5a, the columnar portion 21 comes into contact with the inner peripheral surface of the external terminal connection hole 5a and joins both. Further, since the tip has a tapered diameter, when the external terminal 20a is press-fitted into the external terminal connection hole 5a, the adjustment of the center position is facilitated and the press-fitting is easy.
外部端子２０ａの圧入部の最大外径Ｒｍａｘは、圧入前の状態で、該最大外径Ｒｍａｘと、外部端子接続穴５ａの内径Ｒとの差分（Ｒｍａｘ−Ｒ）が、０〜０．１５ｍｍであることが好ましく、０．０５〜０．１５ｍｍがより好ましく、０．０５〜０．１０ｍｍがより好ましい。上記差分が、上記範囲内となるように最大外径Ｒｍａｘを設定することで、外部端子の破損や、絶縁配線基板３の破損等を生じることなく、外部端子２０ａを外部端子接続穴５ａに圧入して両者を強固に接合でき、外部端子接続穴５ａからの外部端子２０ａの抜けを防止できる。 Maximum outer diameter R max of the press-fitting portion of the external terminal 20a is in a state before press-fitting, the said maximum outer diameter R max, the difference between the inner diameter R of the external terminal connection hole 5a (R max -R) is 0-0 .15 mm is preferable, 0.05 to 0.15 mm is more preferable, and 0.05 to 0.10 mm is more preferable. By setting the maximum outer diameter Rmax so that the difference falls within the above range, the external terminal 20a can be connected to the external terminal connection hole 5a without causing damage to the external terminal or the insulating wiring board 3. The two can be firmly joined by press fitting, and the external terminal 20a can be prevented from coming off from the external terminal connection hole 5a.
図４〜６に示される外部端子２０ｂ〜２０ｄは、絞り加工により外周に突出した突起部２２を有する圧入部と、該圧入部から先端に向かってテーパ状に縮径している縮径部２３とを備えている。この外部端子を、外部端子接続穴５ａに圧入すると、突起部２２ｂが、外部端子接続穴５ａの内周面に接触して両者が接合する。また、先端がテーパ状に縮径しているので、外部端子を外部端子接続穴５ａに圧入する際に中心位置の調整が容易となり、圧入し易い。なお、絞り加工によって形成される突起部の形状は、図４〜６に示す形状に限定されない。 The external terminals 20b to 20d shown in FIGS. 4 to 6 include a press-fit portion having a protrusion 22 protruding to the outer periphery by drawing and a diameter-reduced portion 23 that is tapered from the press-fit portion toward the tip. And. When this external terminal is press-fitted into the external terminal connection hole 5a, the projecting portion 22b comes into contact with the inner peripheral surface of the external terminal connection hole 5a to join them together. In addition, since the tip is tapered, the center position can be easily adjusted when the external terminal is press-fitted into the external terminal connection hole 5a, and the press-fit is easy. In addition, the shape of the protrusion formed by drawing is not limited to the shape shown in FIGS.
外部端子２０ｂ〜２０ｄにおいて、圧入部の最大外径Ｒｍａｘは、圧入前の状態で、該最大外径Ｒｍａｘと、外部端子接続穴５ａの内径Ｒとの差分（Ｒｍａｘ−Ｒ）が、０〜０．２５ｍｍであることが好ましく、０．０５〜０．２５ｍｍがより好ましく、０．１０〜０．２０ｍｍがより好ましい。上記差分が、上記範囲内となるように最大外径Ｒｍａｘを設定することで、外部端子の破損や、金属層５の破損等を生じることなく、外部端子を外部端子接続穴５ａに圧入して両者を強固に接合でき、外部端子接続穴５ａからの外部端子の抜けを防止できる。 In the external terminals 20b to 20d, the maximum outer diameter R max of the press section, in a state before press-fitting, the said maximum outer diameter R max, the difference between the inner diameter R of the external terminal connection hole 5a (R max -R) is, It is preferably 0 to 0.25 mm, more preferably 0.05 to 0.25 mm, and more preferably 0.10 to 0.20 mm. By setting the maximum outer diameter Rmax so that the difference falls within the above range, the external terminal is press-fitted into the external terminal connection hole 5a without causing damage to the external terminal or the metal layer 5. Thus, both can be firmly joined, and the external terminal can be prevented from coming off from the external terminal connection hole 5a.
外部端子接続穴５ａは、その内周が、外部端子の圧入部に適合する穴形状をなしていることが好ましい。外部端子接続穴５ａの内周が、外部端子の圧入部に適合する穴形状をなしていることにより、外部端子の、穴の内周に対する接触面積を大きくできる。 It is preferable that the outer periphery of the external terminal connection hole 5a has a hole shape that matches the press-fit portion of the external terminal. Since the inner periphery of the external terminal connection hole 5a has a hole shape that matches the press-fit portion of the external terminal, the contact area of the external terminal with respect to the inner periphery of the hole can be increased.
次に、上記半導体装置の製造方法となる、本発明の半導体装置の製造方法の第１実施形態について説明する。 Next, a semiconductor device manufacturing method according to a first embodiment of the present invention, which is the semiconductor device manufacturing method, will be described.
絶縁配線基板３に金属層５で内周を覆われた外部端子接続穴５ａを形成し、該外部端子接続穴５ａに外部端子２０を圧入する（圧入工程）。 An external terminal connection hole 5a whose inner periphery is covered with the metal layer 5 is formed in the insulated wiring board 3, and the external terminal 20 is press-fitted into the external terminal connection hole 5a (press-in process).
その際、外部端子２０と外部端子接続穴５ａとの接触部５ｂにおける、外部端子２０と直交する方向の断面、すなわち、図２の接触部５ｂにおけるＢ−Ｂ断面において、外部端子２０は、外部端子接続穴５ａの内周に対し４０％以上接触させる。両者の接触面積は、外部端子２０の圧入部の形状、外部端子接続穴５ａの穴形状により容易に調整できる。例えば、図３に示すように、外部端子の圧入部が絞り加工のないストレートな柱状部からなり、かつ、外部端子接続穴５ａの穴形状がそれに適合する形状をなしている場合は、両者の接触面積をほぼ１００％とすることができる。また、図４〜６に示すように、外部端子の圧入部が、絞り加工により外周に突出した突起部を有するものを用いた場合、突起部の形状や、最大外径Ｒｍａｘを調整することにより両者の接触面積を調整できる。 At that time, in the cross section in the direction orthogonal to the external terminal 20 in the contact portion 5b between the external terminal 20 and the external terminal connection hole 5a, that is, in the BB cross section in the contact portion 5b in FIG. 40% or more is brought into contact with the inner periphery of the terminal connection hole 5a. The contact area between them can be easily adjusted by the shape of the press-fit portion of the external terminal 20 and the shape of the external terminal connection hole 5a. For example, as shown in FIG. 3, when the press-fit portion of the external terminal is formed of a straight columnar portion without drawing processing and the hole shape of the external terminal connection hole 5a is a shape adapted thereto, The contact area can be almost 100%. Also, as shown in FIGS. 4 to 6, when the press-fit portion of the external terminal has a protrusion protruding to the outer periphery by drawing, the shape of the protrusion and the maximum outer diameter R max should be adjusted. Thus, the contact area between them can be adjusted.
次に、冷却板１上に、はんだ層７ａを介して、絶縁配線基板３の金属層６側が接触するように配置し、絶縁配線基板３の金属層５の所定の回路パターン上にはんだ層７ｂを介して半導体素子８を配置する。そして、この状態でリフロー炉に導入し、はんだ層７ａ、７ｂをそれぞれ融解させて、冷却板１と絶縁配線基板３の金属層６とを接合すると共に、半導体素子８と絶縁配線基板３の金属層５とを接合する（リフロー工程）。 Next, it arrange | positions so that the metal layer 6 side of the insulated wiring board 3 may contact via the solder layer 7a on the cooling plate 1, and the solder layer 7b on the predetermined circuit pattern of the metal layer 5 of the insulated wiring board 3 The semiconductor element 8 is arranged via And it introduce | transduces into a reflow furnace in this state, melts solder layer 7a, 7b, respectively, while joining the cooling plate 1 and the metal layer 6 of the insulated wiring board 3, and the metal of the semiconductor element 8 and the insulated wiring board 3 The layer 5 is joined (reflow process).
次に、絶縁配線基板３の金属層５上に配設された各半導体素子８と、外部端子２０とをボンディングワイヤ９を介して電気的に接続する。 Next, each semiconductor element 8 disposed on the metal layer 5 of the insulated wiring board 3 and the external terminal 20 are electrically connected through the bonding wires 9.
そして、冷却板１の周囲を樹脂ケース２で囲い、樹脂ケース２で囲われた内部に封止樹脂１０を充填し、封止樹脂を硬化することで本発明の半導体装置が製造される。 Then, the periphery of the cooling plate 1 is surrounded by the resin case 2, the sealing resin 10 is filled inside the resin case 2, and the sealing resin is cured, whereby the semiconductor device of the present invention is manufactured.
なお、この実施形態では、圧入工程を行った後にリフロー工程を行ったが、リフロー工程後に圧入工程を行ってもよい。 In this embodiment, the reflow process is performed after the press-in process, but the press-in process may be performed after the reflow process.
図７には、本発明の半導体装置の第２実施形態が示されている。この半導体装置は、絶縁配線基板３の金属層５に、外部端子接続穴５ａが形成されており、該外部端子接続穴５ａに外部端子２０が圧入されている。また、外部端子２０の圧入部表面には、メッキ層２５が設けられており、該メッキ層２５が融解して、外部端子２０の圧入部と、外部端子接続穴５ａの内周面とが接合している。なお、この実施形態では、メッキ層は外部端子の圧入部表面に形成されているが、外部端子接続穴５ａの内周面に形成されてもよく、外部端子の圧入部表面と外部端子接続穴５ａの内周面との双方に形成されていてもよい。 FIG. 7 shows a second embodiment of the semiconductor device of the present invention. In this semiconductor device, an external terminal connection hole 5a is formed in the metal layer 5 of the insulated wiring board 3, and the external terminal 20 is press-fitted into the external terminal connection hole 5a. Further, a plated layer 25 is provided on the surface of the press-fitted portion of the external terminal 20, and the plated layer 25 is melted to join the press-fitted portion of the external terminal 20 and the inner peripheral surface of the external terminal connection hole 5a. doing. In this embodiment, the plating layer is formed on the surface of the press-fit portion of the external terminal. However, it may be formed on the inner peripheral surface of the external terminal connection hole 5a, and the surface of the press-fit portion of the external terminal and the external terminal connection hole. It may be formed on both the inner peripheral surface of 5a.
メッキ層２８の厚みは、圧入前の状態で５μｍ以下が好ましい。 The thickness of the plating layer 28 is preferably 5 μm or less before being pressed.
メッキ層２８は、単層であってもよく、複数のメッキ層が積層したものであってもよいが、少なくとも最表層が３５０℃以下の温度で溶融するものが好ましく用いられる。溶融温度が３５０℃以下のメッキ材料としては、Ｓｎメッキ、ＳｎＡｇ系はんだメッキ、ＳｎＢｉ系はんだメッキ、ＳｎＳｂ系はんだメッキ、ＳｎＣｕ系はんだメッキ、ＳｎＩｎ系はんだメッキ等が挙げられる。溶融温度が３５０℃以下であれば、半導体素子等をはんだ付けする際のリフロー工程時に溶融できる。 The plating layer 28 may be a single layer or may be a laminate of a plurality of plating layers, but at least the outermost layer melts at a temperature of 350 ° C. or less is preferably used. Examples of the plating material having a melting temperature of 350 ° C. or lower include Sn plating, SnAg solder plating, SnBi solder plating, SnSb solder plating, SnCu solder plating, and SnIn solder plating. If the melting temperature is 350 ° C. or lower, it can be melted during a reflow process when soldering a semiconductor element or the like.
次に、上記半導体装置の製造方法となる、本発明の半導体装置の製造方法の第２実施形態について説明する。 Next, a semiconductor device manufacturing method according to a second embodiment of the present invention, which is the semiconductor device manufacturing method, will be described.
絶縁配線基板３の金属層５に外部端子接続穴５ａを形成し、この外部端子接続穴５ａに、圧入部表面にメッキ層２５が形成された外部端子２０を圧入する（圧入工程）。外部端子２０の圧入部に形成されるメッキ層２５の厚みは、圧入前の状態で５μｍ以下が好ましい。 An external terminal connection hole 5a is formed in the metal layer 5 of the insulated wiring board 3, and the external terminal 20 having the plated layer 25 formed on the surface of the press-fit portion is press-fitted into the external terminal connection hole 5a (press-in process). The thickness of the plating layer 25 formed in the press-fitted portion of the external terminal 20 is preferably 5 μm or less in a state before press-fitting.
次に、冷却板１上に、はんだ層７ａを介して、絶縁配線基板３の金属層６側が接触するように配置し、絶縁配線基板３の金属層５の所定の回路パターン上にはんだ層７ｂを介して半導体素子８を配置する。そして、この状態でリフロー炉に導入し、はんだ層７ａ、７ｂをそれぞれ融解させると共に、メッキ層２５を溶融させて、冷却板１と絶縁配線基板３の金属層６との接合、半導体素子８と絶縁配線基板３の金属層５との接合、溶融したメッキ層２５により外部端子２０と外部端子接続穴５ａの内周面との接合を行う（リフロー工程）。リフロー時における加熱温度は、３５０℃以下が好ましく、２５０〜３３０℃がより好ましい。加熱温度が３５０℃を超えると、半導体素子等が熱的損傷する恐れがある。 Next, it arrange | positions so that the metal layer 6 side of the insulated wiring board 3 may contact via the solder layer 7a on the cooling plate 1, and the solder layer 7b on the predetermined circuit pattern of the metal layer 5 of the insulated wiring board 3 The semiconductor element 8 is arranged via In this state, it is introduced into a reflow furnace to melt the solder layers 7a and 7b, and to melt the plating layer 25, to join the cooling plate 1 and the metal layer 6 of the insulated wiring board 3, the semiconductor element 8 and Bonding of the insulating wiring board 3 to the metal layer 5 and bonding of the external terminal 20 and the inner peripheral surface of the external terminal connection hole 5a are performed by the molten plating layer 25 (reflow process). The heating temperature during reflow is preferably 350 ° C. or less, and more preferably 250 to 330 ° C. If the heating temperature exceeds 350 ° C., the semiconductor element or the like may be thermally damaged.
次に、絶縁配線基板３の金属層５上に配設された各半導体素子８と、外部端子２０とをボンディングワイヤ９を介して電気的に接続する。 Next, each semiconductor element 8 disposed on the metal layer 5 of the insulated wiring board 3 and the external terminal 20 are electrically connected through the bonding wires 9.
そして、冷却板１の周囲を樹脂ケース２で囲い、樹脂ケース２で囲われた内部に封止樹脂１０を充填し、封止樹脂を硬化することで上記半導体装置が製造される。 Then, the semiconductor device is manufactured by surrounding the cooling plate 1 with a resin case 2, filling the inside enclosed with the resin case 2 with the sealing resin 10, and curing the sealing resin.
図８には、本発明の半導体装置の第３実施形態が示されている。この半導体装置は、絶縁配線基板３の金属層５に、外部端子接続穴５ａが形成されており、該外部端子接続穴５ａに外部端子２０が圧入されている。また、外部端子２０の圧入部表面及び／又は外部端子接続穴５ａの内周面には、焼結材２６が塗布されており、該焼結材２６が焼結して、外部端子２０の圧入部と、外部端子接続穴５ａの内周面とが接合している。 FIG. 8 shows a third embodiment of the semiconductor device of the present invention. In this semiconductor device, an external terminal connection hole 5a is formed in the metal layer 5 of the insulated wiring board 3, and the external terminal 20 is press-fitted into the external terminal connection hole 5a. A sintered material 26 is applied to the surface of the press-fit portion of the external terminal 20 and / or the inner peripheral surface of the external terminal connection hole 5a, and the sintered material 26 is sintered to press-fit the external terminal 20. And the inner peripheral surface of the external terminal connection hole 5a are joined.
焼結材２６としては、３５０℃以下の温度で焼結するものが好ましく用いられる。例えばＡｇ系やＣｕ系の焼結材料等が挙げられる。焼結温度が３５０℃以下であれば、半導体素子等をはんだ付けする際のリフロー工程時に焼結できる。 As the sintered material 26, a material that is sintered at a temperature of 350 ° C. or lower is preferably used. For example, an Ag-based or Cu-based sintered material can be used. If sintering temperature is 350 degrees C or less, it can sinter at the time of the reflow process at the time of soldering a semiconductor element etc.
次に、上記半導体装置の製造方法となる、本発明の半導体装置の製造方法の第３実施形態について説明する。 Next, a semiconductor device manufacturing method according to a third embodiment of the present invention, which is the semiconductor device manufacturing method, will be described.
絶縁配線基板３の金属層５に外部端子接続穴５ａを形成する。この外部端子接続穴５ａの内周面及び／又は外部端子２０の圧入部に焼結材を塗布した後、外部端子接続穴５ａに外部端子２０を圧入する（圧入工程）。 External terminal connection holes 5 a are formed in the metal layer 5 of the insulating wiring board 3. After the sintered material is applied to the inner peripheral surface of the external terminal connection hole 5a and / or the press-fitted portion of the external terminal 20, the external terminal 20 is press-fitted into the external terminal connection hole 5a (press-fit process).
次に、冷却板１上に、はんだ層７ａを介して、絶縁配線基板３の金属層６側が接触するように配置し、絶縁配線基板３の金属層５の所定の回路パターン上にはんだ層７ｂを介して半導体素子８を配置する。そして、この状態でリフロー炉に導入し、はんだ層７ａ、７ｂをそれぞれ融解させて、冷却板１と絶縁配線基板３の金属層６とを接合し、更に半導体素子８と絶縁配線基板３の金属層５とを接合すると共に、焼結材２６を焼結させて外部端子２０と外部端子接続穴５ａの内周面とを接合させる（リフロー工程）。リフロー時における加熱温度は、３５０℃以下が好ましく、２５０〜３３０℃がより好ましい。加熱温度が３５０℃を超えると、半導体素子等が熱的損傷する恐れがある。 Next, it arrange | positions so that the metal layer 6 side of the insulated wiring board 3 may contact via the solder layer 7a on the cooling plate 1, and the solder layer 7b on the predetermined circuit pattern of the metal layer 5 of the insulated wiring board 3 The semiconductor element 8 is arranged via And in this state, it introduce | transduces into a reflow furnace, melt | dissolves the solder layers 7a and 7b, respectively, joins the cooling plate 1 and the metal layer 6 of the insulated wiring board 3, and also the semiconductor element 8 and the metal of the insulated wiring board 3 While joining the layer 5, the sintered material 26 is sintered and the external terminal 20 and the internal peripheral surface of the external terminal connection hole 5a are joined (reflow process). The heating temperature during reflow is preferably 350 ° C. or less, and more preferably 250 to 330 ° C. If the heating temperature exceeds 350 ° C., the semiconductor element or the like may be thermally damaged.
次に、絶縁配線基板３の金属層５上に配設された各半導体素子８と、外部端子２０とをボンディングワイヤ９を介して電気的に接続する。 Next, each semiconductor element 8 disposed on the metal layer 5 of the insulated wiring board 3 and the external terminal 20 are electrically connected through the bonding wires 9.
そして、冷却板１の周囲を樹脂ケース２で囲い、樹脂ケース２で囲われた内部に封止樹脂１０を充填し、封止樹脂を硬化することで上記半導体装置が製造される。 Then, the semiconductor device is manufactured by surrounding the cooling plate 1 with a resin case 2, filling the inside enclosed with the resin case 2 with the sealing resin 10, and curing the sealing resin.
図９及び図１０には、本発明の半導体装置の第４実施形態が示されている。上記した第１の実施形態と実質的に同一部分には同符号を付して、その説明を省略する。 9 and 10 show a fourth embodiment of the semiconductor device of the present invention. Portions that are substantially the same as those of the first embodiment described above are denoted by the same reference numerals, and description thereof is omitted.
この実施形態に係る半導体装置は、外部端子２０の軸方向途中に絞り加工が施されて、凹み部２８が形成されている。また、この実施形態における外部端子２０ｅは、図１０に示すように円柱状の柱状部２１を有しており、その軸方向両端に先細テーパ状の縮径部２３，２３が形成されていると共に、柱状部２１の軸方向中央に円形断面となるように絞り加工が施されて、環状の凹み部２８が設けられている。 In the semiconductor device according to this embodiment, a drawing process is performed in the axial direction of the external terminal 20 to form a recess 28. Further, the external terminal 20e in this embodiment has a columnar columnar portion 21 as shown in FIG. 10, and tapered diameter-reduced portions 23, 23 are formed at both axial ends thereof. The columnar portion 21 is drawn at the center in the axial direction so as to have a circular cross section, and an annular recess 28 is provided.
そして、図９に示すように、樹脂ケース２の内部に配置された絶縁基板３、半導体素子８、外部端子２０の一部が封止樹脂１０で覆われると共に、外部端子２０に設けられた凹み部２８が封止樹脂１０で覆われている。 As shown in FIG. 9, the insulating substrate 3, the semiconductor element 8, and the external terminal 20 disposed inside the resin case 2 are partially covered with the sealing resin 10, and the recess provided in the external terminal 20. The part 28 is covered with the sealing resin 10.
この実施形態では、外部端子２０の凹み部２８が封止樹脂１０で覆われるため、外部端子２０に引き抜き力が作用しても、封止樹脂１０が凹み部２８に引っ掛かって抵抗となり、外部端子２０の金属層５に対する引き抜き強度を向上させることができ、金属層５から外部端子２０が抜け外れることを一層確実に防止することができる。 In this embodiment, since the recessed portion 28 of the external terminal 20 is covered with the sealing resin 10, even if a pulling force acts on the external terminal 20, the sealing resin 10 is hooked on the recessed portion 28 and becomes a resistance. The pull-out strength of the metal layer 20 with respect to the metal layer 5 can be improved, and the external terminal 20 can be more reliably prevented from coming off from the metal layer 5.
また、凹み部２８を有する外部端子２０としては、図１１〜１３に示す形状のものであってもよい。図１１に示す外部端子２０ｆは、柱状部２１の軸方向途中に断面十字形状となるように絞り加工が施され、その周方向に均等な間隔で４つの凹み部２８が設けられている。図１２に示す外部端子２０ｇは、柱状部２１の軸方向途中において、断面がＹ字形状となるように絞り加工が施され、その周方向に均等な間隔で３つの凹み部２８が設けられている。図１３に示す外部端子２０ｈは、柱状部２１の軸方向途中に略長方形断面となるように絞り加工が施され、その両側に一対の凹み部２８が設けられている。 Moreover, as the external terminal 20 which has the recessed part 28, the thing of the shape shown to FIGS. The external terminal 20f shown in FIG. 11 is drawn so as to have a cross-shaped cross section in the middle of the columnar portion 21 in the axial direction, and four recessed portions 28 are provided at equal intervals in the circumferential direction. The external terminal 20g shown in FIG. 12 is drawn in the middle of the columnar portion 21 in the axial direction so that the cross section is Y-shaped, and three recessed portions 28 are provided at equal intervals in the circumferential direction. Yes. The external terminal 20h shown in FIG. 13 is drawn so as to have a substantially rectangular cross section in the middle of the columnar portion 21 in the axial direction, and a pair of recesses 28 are provided on both sides thereof.
また、凹み部２８は、外部端子２０の軸方向途中の任意の箇所に単独で設けたり、所定間隔をあけて複数設けることもでき、特に限定されない。 Moreover, the recessed part 28 can also be provided independently in the arbitrary locations in the middle of the external terminal 20 in the axial direction, or a plurality of the recessed parts 28 can be provided at predetermined intervals, and is not particularly limited.
また、凹み部２８の形状としては、図１０〜１３に示す外部端子２０ｅ、２０ｆ、２０ｇ、２０ｈに形成されたものに限定されない。 Moreover, as a shape of the recessed part 28, it is not limited to what was formed in the external terminals 20e, 20f, 20g, and 20h shown to FIGS.
次に、上記半導体装置の製造方法となる、本発明の半導体装置の製造方法の第４実施形態について説明する。 Next, a fourth embodiment of the method for manufacturing a semiconductor device of the present invention, which is a method for manufacturing the semiconductor device, will be described.
始めに外部端子２０の軸方向途中に所定の絞り加工を施して、凹み部２８を形成しておおく（凹み部形成工程）。次いで、絶縁配線基板３の金属層５に外部端子接続穴５ａを形成し、これに外部端子２０を圧入する（圧入工程）。その後、冷却板１上にはんだ層７ａを介して絶縁配線基板３を配置すると共に、絶縁配線基板３にはんだ層７ｂを介して半導体素子８を配置した後、リフロー炉に導入して冷却板１と絶縁配線基板３の金属層６とを接合して、半導体素子８と絶縁配線基板３の金属層５とを接合する（リフロー工程）。次に、各半導体素子８と外部端子２０とをボンディングワイヤ９を介して電気的に接続する。そして、冷却板１の周囲を樹脂ケース２で囲い、外部端子２０の凹み部２８が、封止樹脂１０で覆われるように、樹脂ケース２で囲われた内部に封止樹脂１０を充填し、封止樹脂１０を硬化することで上記半導体装置が製造される（図９参照）。 First, a predetermined drawing process is performed in the middle of the external terminal 20 in the axial direction to form the recessed portion 28 (a recessed portion forming step). Subsequently, the external terminal connection hole 5a is formed in the metal layer 5 of the insulated wiring board 3, and the external terminal 20 is press-fitted into this (press-fit process). Thereafter, the insulating wiring substrate 3 is disposed on the cooling plate 1 via the solder layer 7a, and the semiconductor element 8 is disposed on the insulating wiring substrate 3 via the solder layer 7b. And the metal layer 6 of the insulated wiring board 3 are joined, and the semiconductor element 8 and the metal layer 5 of the insulated wiring board 3 are joined (reflow process). Next, each semiconductor element 8 and the external terminal 20 are electrically connected via a bonding wire 9. Then, the periphery of the cooling plate 1 is surrounded by the resin case 2, and the inside of the resin case 2 is filled with the sealing resin 10 so that the recessed portion 28 of the external terminal 20 is covered with the sealing resin 10. The semiconductor device is manufactured by curing the sealing resin 10 (see FIG. 9).
これにより外部端子２０の凹み部２８が封止樹脂１０で覆われるので、外部端子２０に引き抜き力が作用しても、凹み部２８内に充填された封止樹脂１０に引っ掛かって抵抗となり、外部端子２０の金属層５に対する引き抜き強度を向上させることができる。 As a result, the recessed portion 28 of the external terminal 20 is covered with the sealing resin 10, so that even if a pulling force acts on the external terminal 20, it is caught by the sealing resin 10 filled in the recessed portion 28 and becomes a resistance. The pull-out strength with respect to the metal layer 5 of the terminal 20 can be improved.
なお、以上説明した各実施形態においては、樹脂ケース２で囲まれた内部空間に封止樹脂１０が充填されるようになっているが、樹脂ケース２を用いずに半導体装置を封止樹脂１０で封止した構造としてもよい。例えば、所定形状をなした金型のキャビティ内に各半導体装置を配置しておき、その状態で金型のキャビティ内に封止樹脂１０を充填して硬化させた後、金型から各半導体装置を取り出すことで、樹脂ケース２を用いずに半導体装置を封止樹脂１０で封止した構造とすることができる。図１４〜１７には、このような樹脂ケース２を用いない半導体装置の例が示されている。 In each of the embodiments described above, the sealing resin 10 is filled in the internal space surrounded by the resin case 2. However, the semiconductor device is sealed without using the resin case 2. It is good also as a structure sealed with. For example, each semiconductor device is placed in a cavity of a mold having a predetermined shape, and in that state, the sealing resin 10 is filled in the cavity of the mold and cured, and then each semiconductor device is removed from the mold. As a result, the semiconductor device can be sealed with the sealing resin 10 without using the resin case 2. 14 to 17 show examples of semiconductor devices that do not use such a resin case 2.
図１４に示す半導体装置は、樹脂ケース２を使用せずに、その外周全体が封止樹脂１０で覆われた形状をなしている。その他の形状は前記各実施形態と同様である。 The semiconductor device shown in FIG. 14 has a shape in which the entire outer periphery thereof is covered with the sealing resin 10 without using the resin case 2. Other shapes are the same as those in the above embodiments.
図１５に示す半導体装置は、冷却板１が設けられていない以外は、図１４に示す半導体装置と同様の構造をなしている。 The semiconductor device shown in FIG. 15 has the same structure as the semiconductor device shown in FIG. 14 except that the cooling plate 1 is not provided.
図１６に示す半導体装置は、ワイヤボンディング９を用いる代わりに、各半導体素子８と外部端子２０とを、リードフレーム１２を介して電気的に接続した構造をなしている。リードフレーム１２の一端は、はんだ層７ｃを介して各半導体素子８に接続され、他端は、はんだ層７ｃを介して絶縁配線基板３の金属層５に接続されている。 The semiconductor device shown in FIG. 16 has a structure in which each semiconductor element 8 and the external terminal 20 are electrically connected via the lead frame 12 instead of using the wire bonding 9. One end of the lead frame 12 is connected to each semiconductor element 8 via the solder layer 7c, and the other end is connected to the metal layer 5 of the insulating wiring board 3 via the solder layer 7c.
図１７に示す半導体装置は、所定の回路パターンが形成されたプリント基板１４を介して、各半導体素子８と外部端子２０とが電気的に接続された構造をなしている。プリント基板１４には接続孔１４ａが形成されており、外部端子２０が挿通されていると共に、はんだ層７ｃを介して、各半導体素子８がプリント基板１４の図示しない配線パターンに接続されている。なお、図１７の部分拡大図に示すように、外部端子２０に凹み部２８が設けられている場合、同凹み部２８は、プリント基板１４の上方又は下方の位置（図１７では、プリント基板１４の上方に位置している）となるように形成されている。 The semiconductor device shown in FIG. 17 has a structure in which each semiconductor element 8 and the external terminal 20 are electrically connected via a printed circuit board 14 on which a predetermined circuit pattern is formed. A connection hole 14a is formed in the printed circuit board 14, the external terminal 20 is inserted, and each semiconductor element 8 is connected to a wiring pattern (not shown) of the printed circuit board 14 through the solder layer 7c. As shown in the partially enlarged view of FIG. 17, when the recess 28 is provided in the external terminal 20, the recess 28 is located above or below the printed circuit board 14 (in FIG. 17, in the printed circuit board 14). It is formed so that it may be located above.
以下、実施例を用いて本発明を具体的に説明する。なお、以下の実施例において、絶縁配線基板として、厚さ１ｍｍの絶縁基板の両面に、厚さ１．２ｍｍの銅板が接合されたものを用いた。 Hereinafter, the present invention will be specifically described with reference to examples. In the following examples, an insulating wiring board in which a copper plate having a thickness of 1.2 mm was bonded to both surfaces of an insulating substrate having a thickness of 1 mm was used.
（試験例１）
絶縁配線基板の一方の面に形成された銅板に、図２に示すように、円柱状の外部端子接続穴５ａを形成した。この穴に、図３に示す形状の外部端子２０ａを圧入した。
外部端子２０ａと外部端子接続穴５ａとの接触部５ｂにおける、外部端子２０ａと直交する方向の断面（図２の接触部５ｂにおけるＢ−Ｂ断面）において、外部端子２０ａは、外部端子接続穴５ａの内周に対し１００％接触していた。
そして、外部端子接続穴５ａの内径Ｒを調整して、外部端子２０ａの圧入部の最大外径Ｒｍａｘと、外部端子接続穴５ａの内径Ｒとの差分（Ｒｍａｘ−Ｒ）を、０．０５〜０．２５ｍｍの範囲で変化させた。
(Test Example 1)
As shown in FIG. 2, a columnar external terminal connection hole 5a was formed on a copper plate formed on one surface of the insulated wiring board. An external terminal 20a having the shape shown in FIG. 3 was press-fitted into this hole.
In the cross section in the direction orthogonal to the external terminal 20a in the contact portion 5b between the external terminal 20a and the external terminal connection hole 5a (BB cross section in the contact portion 5b in FIG. 2), the external terminal 20a is connected to the external terminal connection hole 5a. It was 100% in contact with the inner circumference.
Then, by adjusting the inner diameter R of the external terminal connection hole 5a, and the maximum outer diameter R max of the press-fitting portion of the external terminal 20a, the difference (R max -R) of the inner diameter R of the external terminal connection hole 5a, 0. It was changed in the range of 05 to 0.25 mm.
（試験例２）
試験例１において、図４に示す形状の外部端子２０ｂを用いた以外は、試験例１と同様にして、外部端子２０ｂを外部端子接続穴５ａに圧入した。
外部端子２０ｂと外部端子接続穴５ａとの接触部５ｂにおける、外部端子２０ｂと直交する方向の断面（図２の接触部５ｂにおけるＢ−Ｂ断面）において、外部端子２０ｂは、外部端子接続穴５ａの内周に対し５０％接触していた。
そして、外部端子接続穴５ａの内径Ｒを調整して、外部端子２０ｂの圧入部の最大外径Ｒｍａｘと、外部端子接続穴５ａの内径Ｒとの差分（Ｒｍａｘ−Ｒ）を、０．０５〜０．２５ｍｍの範囲で変化させた。
(Test Example 2)
In Test Example 1, the external terminal 20b was press-fitted into the external terminal connection hole 5a in the same manner as in Test Example 1 except that the external terminal 20b having the shape shown in FIG. 4 was used.
In the cross section in the direction orthogonal to the external terminal 20b at the contact portion 5b between the external terminal 20b and the external terminal connection hole 5a (BB cross section in the contact portion 5b in FIG. 2), the external terminal 20b is connected to the external terminal connection hole 5a. 50% contact with the inner circumference of the.
Then, by adjusting the inner diameter R of the external terminal connection hole 5a, and the maximum outer diameter R max of the press-fitting portion of the external terminal 20b, and the difference (R max -R) of the inner diameter R of the external terminal connection hole 5a, 0. It was changed in the range of 05 to 0.25 mm.
（試験例３）
試験例１において、図４に示す形状の外部端子２０ｂの最大外径Ｒｍａｘを変えた以外は、試験例１と同様にして、外部端子２０ｂを外部端子接続穴５ａに圧入した。
外部端子２０ｂと外部端子接続穴５ａとの接触部５ｂにおける、外部端子２０ｂと直交する方向の断面（図２の接触部５ｂにおけるＢ−Ｂ断面）において、外部端子２０ｂは、外部端子接続穴５ａの内周に対し４０％接触していた。
そして、外部端子接続穴５ａの内径Ｒを調整して、外部端子２０ｂの圧入部の最大外径Ｒｍａｘと、外部端子接続穴５ａの内径Ｒとの差分（Ｒｍａｘ−Ｒ）を、０．０５〜０．２５ｍｍの範囲で変化させた。
(Test Example 3)
In Test Example 1, except for changing the maximum outer diameter R max of the external terminals 20b of the shape shown in FIG. 4, in the same manner as in Test Example 1, it was injected external terminal 20b to the external terminal connection hole 5a.
In the cross section in the direction orthogonal to the external terminal 20b at the contact portion 5b between the external terminal 20b and the external terminal connection hole 5a (BB cross section in the contact portion 5b in FIG. 2), the external terminal 20b is connected to the external terminal connection hole 5a. 40% of the inner circumference of the
Then, by adjusting the inner diameter R of the external terminal connection hole 5a, and the maximum outer diameter R max of the press-fitting portion of the external terminal 20b, and the difference (R max -R) of the inner diameter R of the external terminal connection hole 5a, 0. It was changed in the range of 05 to 0.25 mm.
（試験例４）
試験例１において、図４に示す形状の外部端子２０ｂの最大外径Ｒｍａｘを変えた以外は、試験例１と同様にして、外部端子２０ｂを外部端子接続穴５ａに圧入した。
外部端子２０ｂと外部端子接続穴５ａとの接触部５ｂにおける、外部端子２０ｂと直交する方向の断面（図２の接触部５ｂにおけるＢ−Ｂ断面）において、外部端子２０ｂは、外部端子接続穴５ａの内周に対し３０％接触していた。
そして、外部端子接続穴５ａの内径Ｒを調整して、外部端子２０ｂの圧入部の最大外径Ｒｍａｘと、外部端子接続穴５ａの内径Ｒとの差分（Ｒｍａｘ−Ｒ）を、０．０５〜０．１５ｍｍの範囲で変化させた。
(Test Example 4)
In Test Example 1, except for changing the maximum outer diameter R max of the external terminals 20b of the shape shown in FIG. 4, in the same manner as in Test Example 1, it was injected external terminal 20b to the external terminal connection hole 5a.
In the cross section in the direction orthogonal to the external terminal 20b at the contact portion 5b between the external terminal 20b and the external terminal connection hole 5a (BB cross section in the contact portion 5b in FIG. 2), the external terminal 20b is connected to the external terminal connection hole 5a. 30% of the inner circumference of the
Then, by adjusting the inner diameter R of the external terminal connection hole 5a, and the maximum outer diameter R max of the press-fitting portion of the external terminal 20b, and the difference (R max -R) of the inner diameter R of the external terminal connection hole 5a, 0. It was changed in the range of 05 to 0.15 mm.
（試験例５）
絶縁配線基板の銅板に、円柱状の外部端子をはんだ付けして両者を接合した。
(Test Example 5)
A cylindrical external terminal was soldered to the copper plate of the insulated wiring board to join them together.
上記各試験例により得られた外部端子と絶縁配線基板との接合体について、接合強度及び電気抵抗を測定した。結果を表１にまとめて記す。 The bonding strength and electric resistance of the bonded body of the external terminal and the insulated wiring board obtained by the above test examples were measured. The results are summarized in Table 1.
なお、電気抵抗は、外部端子と絶縁配線基板との接合体に電流を流し、圧入部の電圧を測定して抵抗値を求めた。そして、試験例５の抵抗値を１００として、各試験例の抵抗値を相対値で算出した。 The electrical resistance was determined by applying a current to the joined body of the external terminal and the insulated wiring board and measuring the voltage at the press-fitting portion. Then, assuming that the resistance value of Test Example 5 was 100, the resistance value of each Test Example was calculated as a relative value.
また、接合強度は、絶縁配線基板を固定した状態で外部端子を引張り、外部端子が絶縁配線基板から引き抜かれる際の引張強度の最大値を接合強度として記録した。そして、試験例５の接合強度を１００として、各試験例の接合強度を相対値で算出した。 Further, the bonding strength was recorded as the bonding strength by pulling the external terminal with the insulated wiring board fixed, and recording the maximum value of the tensile strength when the external terminal was pulled out from the insulated wiring board. Then, assuming that the bonding strength of Test Example 5 was 100, the bonding strength of each Test Example was calculated as a relative value.
表１に示されるように、試験例１〜３と、試験例４との比較から、外部端子の穴内周への接触面積が４０％以上であれば、十分な導電性及び接合強度を確保できた。そして、試験例１〜３は、外部端子と絶縁配線基板とをはんだ付けして接合した試験例５よりも導電性が良好であった。 As shown in Table 1, from the comparison between Test Examples 1 to 3 and Test Example 4, if the contact area to the inner periphery of the hole of the external terminal is 40% or more, sufficient conductivity and bonding strength can be secured. It was. The test examples 1 to 3 were more conductive than the test example 5 in which the external terminal and the insulated wiring board were soldered and joined.
また、外部端子として、絞り加工のない円柱状のものを用いた試験例１においては、外部端子の最大外径と、該外部端子を圧入する穴の直径との差が０．０５〜０．１５ｍｍであれば、絶縁配線基板の銅板に形成した穴に外部端子を容易に圧入できた。 Further, in Test Example 1 in which the cylindrical terminal without drawing is used as the external terminal, the difference between the maximum outer diameter of the external terminal and the diameter of the hole into which the external terminal is press-fitted is 0.05-0. If it was 15 mm, the external terminal could be easily press-fitted into the hole formed in the copper plate of the insulated wiring board.
また、外部端子として、絞り加工がされたものを用いた試験例２〜３においては、外部端子の最大外径と、該外部端子を圧入する穴の直径との差が０．０５〜０．２５ｍｍであれば、絶縁配線基板の銅板に形成した穴に外部端子を容易に圧入できた。 Further, in Test Examples 2 to 3 using the drawn external terminals, the difference between the maximum outer diameter of the external terminal and the diameter of the hole into which the external terminal is press-fitted is 0.05-0. If it was 25 mm, the external terminal could be easily press-fitted into the hole formed in the copper plate of the insulated wiring board.
１、５１：冷却板
２、５２：樹脂ケース
３、５６：絶縁配線基板
４、５３：絶縁基板
５、６、５４、５５：金属層
５ａ：外部端子接続穴
５ｂ：接触部
７ａ、７ｂ、７ｃ、５７ａ、５７ｂ、５７ｃ：はんだ層
８、５８：半導体素子
９、６０：ボンディングワイヤ
１０、６１：封止樹脂
１２：リードフレーム
１４：プリント基板
２０、２０ａ、２０ｂ、２０ｃ、２０ｄ、２０ｅ、２０ｆ、２０ｇ、２０ｈ、５９：外部端子
２１：柱状部
２２：突起部
２３：縮径部
２５：メッキ層
２６：焼結材
２８：凹み部
DESCRIPTION OF SYMBOLS 1, 51: Cooling plate 2, 52: Resin case 3, 56: Insulated wiring board 4, 53: Insulating board 5, 6, 54, 55: Metal layer 5a: External terminal connection hole 5b: Contact part 7a, 7b, 7c 57a, 57b, 57c: solder layer 8, 58: semiconductor element 9, 60: bonding wire 10, 61: sealing resin 12: lead frame 14: printed circuit board 20, 20a, 20b, 20c, 20d, 20e, 20f, 20g, 20h, 59: External terminal 21: Columnar portion 22: Protruding portion 23: Reduced diameter portion 25: Plating layer 26: Sintered material 28: Recessed portion
Claims (11)
前記外部端子は、前記穴への圧入部に、外周に突出した突起部を有し、この突起部が前記穴の内周面に接触しており、
前記外部端子と前記穴との接触部における、前記外部端子と直交する方向の断面において、前記外部端子が、前記穴の内周に対し４０％以上接触していることを特徴とする半導体装置。 An insulating substrate ; a metal layer constituting a circuit pattern formed on the insulating substrate ; a hole formed in the metal layer; and an external terminal press-fitted into the hole and connected to the metal layer. ,
The external terminal has a protrusion protruding to the outer periphery at the press-fitting portion into the hole, and the protrusion is in contact with the inner peripheral surface of the hole.
A semiconductor device, wherein the external terminal is in contact with the inner periphery of the hole by 40% or more in a cross section in a direction orthogonal to the external terminal at a contact portion between the external terminal and the hole.
前記外部端子の前記穴側の先端は、先端に向かってテーパ状に縮径しており、 The hole-side tip of the external terminal is tapered toward the tip, and the diameter is reduced.
前記外部端子と前記穴との接触部における、前記外部端子と直交する方向の断面において、前記外部端子が、前記穴の内周に対し４０％以上接触していることを特徴とする半導体装置。 A semiconductor device, wherein the external terminal is in contact with the inner periphery of the hole by 40% or more in a cross section in a direction orthogonal to the external terminal at a contact portion between the external terminal and the hole.
絶縁基板上に形成された回路パターンを構成する金属層に穴を形成し、この穴に外部端子を圧入して、前記外部端子と前記穴との接触部における、前記外部端子と直交する方向の断面において、前記外部端子を前記穴の内周に対し４０％以上接触させることを特徴とする半導体装置の製造方法。 A method for manufacturing a semiconductor device in which an external terminal is connected to a metal layer constituting a circuit pattern formed on an insulating substrate,
A hole is formed in the metal layer constituting the circuit pattern formed on the insulating substrate, the external terminal is press-fitted into the hole, and the contact portion between the external terminal and the hole is in a direction perpendicular to the external terminal. In a cross section, the external terminal is brought into contact with the inner periphery of the hole by 40% or more.
前記半導体素子と前記金属層とを接合させ且つ前記外部端子を前記穴に圧入して接合した後、前記外部端子の凹み部が封止樹脂で覆われるように、封止樹脂を充填して前記半導体装置を封入する、請求項９又は１０に記載の半導体装置の製造方法。 Applying a drawing process in the axial direction of the external terminal to form a recess,
After bonding the semiconductor element and the metal layer and press-fitting the external terminal into the hole, filling the sealing resin with the sealing resin so that the recess of the external terminal is covered with the sealing resin The method for manufacturing a semiconductor device according to claim 9 , wherein the semiconductor device is encapsulated.
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