JP5929694B2 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- JP5929694B2 JP5929694B2 JP2012228209A JP2012228209A JP5929694B2 JP 5929694 B2 JP5929694 B2 JP 5929694B2 JP 2012228209 A JP2012228209 A JP 2012228209A JP 2012228209 A JP2012228209 A JP 2012228209A JP 5929694 B2 JP5929694 B2 JP 5929694B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
本発明は、半導体装置に関する。 The present invention relates to a semiconductor device.
半導体スイッチング素子の両主面にそれぞれ電気的かつ熱的に接続された一対の放熱部材を備えてなり、当該両主面から放熱を行う半導体装置が提案されている（特許文献１）。図７に示すように、この半導体装置は、半導体スイッチング素子５１、一対の放熱部材５２，５３、モールド樹脂部５４、制御信号入力用リード５５が一体化されたものである。放熱部材５２，５３は、半田５６を介して半導体スイッチング素子５１に接続されている。放熱部材５３は、受熱面がモールド樹脂部５４内で半導体スイッチング素子５１のエミッタ電極に接続される第一部材５３ａと、放熱面を有し、モールド樹脂部５４の外にある第二部材５３ｂとの２種類の部材からなる。第一部材５３ａと第二部材５３ｂとは半田５６により接合されている。制御信号入力用リード５５はボンディングワイヤ５７により半導体スイッチング素子５１のゲート電極に接続されている。なお、モールド樹脂部５４の外側に延出する大電流用のリード端子（図示しない）は、第二部材５３ｂ側に形成される。 There has been proposed a semiconductor device that includes a pair of heat dissipating members electrically and thermally connected to both main surfaces of a semiconductor switching element and radiates heat from both main surfaces (Patent Document 1). As shown in FIG. 7, this semiconductor device includes a semiconductor switching element 51, a pair of heat dissipation members 52 and 53, a mold resin portion 54, and a control signal input lead 55. The heat radiating members 52 and 53 are connected to the semiconductor switching element 51 via the solder 56. The heat radiating member 53 has a heat receiving surface connected to the emitter electrode of the semiconductor switching element 51 in the mold resin portion 54, a second member 53b having a heat radiating surface and outside the mold resin portion 54, It consists of two types of members. The first member 53 a and the second member 53 b are joined by solder 56. The control signal input lead 55 is connected to the gate electrode of the semiconductor switching element 51 by a bonding wire 57. A lead terminal (not shown) for large current extending outside the mold resin portion 54 is formed on the second member 53b side.
この半導体装置を製造する場合は、先ず、放熱部材５２上に半導体スイッチング素子５１を半田５６で接合し、その上に放熱部材５３の第一部材５３ａを半田５６で接合し、半導体スイッチング素子５１のゲート電極にボンディングワイヤ５７により制御信号入力用リード５５を接続した積層体を形成する。そして、得られた積層体を金型のキャビティ内にセットして、キャビティ内に樹脂を注入することで、積層体の周辺部にモールド樹脂部５４を形成する。その後、金型から樹脂モールドされた積層体を取り出し、第一部材５３ａのモールド樹脂部５４からの突出部に第二部材５３ｂを半田５６で接合する。そして、最後に大電流用のリード端子（バスバー）を第二部材５３ｂに接合する。 When manufacturing this semiconductor device, first, the semiconductor switching element 51 is joined to the heat radiating member 52 with the solder 56, and the first member 53 a of the heat radiating member 53 is joined thereto with the solder 56. A laminated body in which the control signal input lead 55 is connected to the gate electrode by the bonding wire 57 is formed. And the mold resin part 54 is formed in the peripheral part of a laminated body by setting the obtained laminated body in the cavity of a metal mold | die, and injecting resin in a cavity. Thereafter, the resin-molded laminate is taken out of the mold, and the second member 53b is joined to the projecting portion from the mold resin portion 54 of the first member 53a with the solder 56. Finally, a lead terminal (bus bar) for large current is joined to the second member 53b.
また、電力変換装置に使用される半導体装置において、過負荷によって起こる半導体素子の急激な温度上昇を抑制することのできる半導体装置として、ヒートシンクの他に、半導体素子の熱を一時的に吸収して、その後、放熱するヒートマス（蓄熱体）を有するものがある。この場合、半導体素子で発生した熱は、通常はヒートシンクへ伝導され、過負荷状態において、ヒートシンクの冷却能力が対応できないときに、余分な熱がヒートマスに一時的に蓄えられた後、ヒートシンクへ伝導される。 Moreover, in a semiconductor device used in a power converter, as a semiconductor device capable of suppressing a rapid temperature rise of a semiconductor element caused by an overload, in addition to a heat sink, the heat of the semiconductor element is temporarily absorbed. Then, there is one having a heat mass (heat storage body) for radiating heat. In this case, the heat generated in the semiconductor element is normally conducted to the heat sink, and when the cooling capacity of the heat sink cannot be accommodated in an overload condition, the excess heat is temporarily stored in the heat mass and then conducted to the heat sink. Is done.
特許文献１の半導体装置では、半導体スイッチング素子５１に電気的に接続される上部電極は、半導体スイッチング素子５１の上側に接合された放熱部材５３の上に接続されている。そのため、半導体装置が大型化するとともに大電流が半導体スイッチング素子５１から放熱部材に流れるため、放熱部材５３の分、電気抵抗が大きくなり好ましくない。また、半導体スイッチング素子５１に放熱部材５３を半田で接合する際、放熱部材５３の一部が半導体スイッチング素子５１に接触すると、半導体スイッチング素子５１の上面に傷が付く虞がある。放熱部材５３の一部が半導体スイッチング素子５１に接触しないように半田接合するためには、放熱部材５３の位置を規制する位置規制部材（治具）で半導体スイッチング素子５１を所定の位置に保持した状態で接合する必要があり、接合に手間が掛かるという問題もある。 In the semiconductor device of Patent Document 1, the upper electrode that is electrically connected to the semiconductor switching element 51 is connected to a heat dissipation member 53 that is joined to the upper side of the semiconductor switching element 51. For this reason, the semiconductor device is increased in size and a large current flows from the semiconductor switching element 51 to the heat dissipation member. Further, when the heat radiating member 53 is joined to the semiconductor switching element 51 with solder, if a part of the heat radiating member 53 comes into contact with the semiconductor switching element 51, the upper surface of the semiconductor switching element 51 may be damaged. In order to perform solder bonding so that a part of the heat radiating member 53 does not contact the semiconductor switching element 51, the semiconductor switching element 51 is held at a predetermined position by a position restricting member (jig) that restricts the position of the heat radiating member 53. There is also a problem that it is necessary to join in a state, and it takes time and effort to join.
また、特許文献１の半導体装置において、放熱部材５３に代えてヒートマスを設けると、大電流がヒートマスを流れるため過熱時以外でもヒートマスが加熱される状態となり、好ましくない。 In addition, in the semiconductor device of Patent Document 1, if a heat mass is provided instead of the heat radiating member 53, a large current flows through the heat mass, so that the heat mass is heated even when it is not overheated.
本発明は、前記の問題に鑑みてなされたものであって、その目的は、半導体素子の過熱を抑制、防止する過熱抑制防止部材を半導体装置の製造時に、位置規制部材を必要とせずに半導体素子に非接触で接合することができ、しかも、半導体素子の過熱抑制防止を効果的に行うことができる半導体装置を提供することにある。 The present invention has been made in view of the above problems, and an object of the present invention is to provide an overheat suppression preventing member that suppresses and prevents overheating of a semiconductor element without using a position restricting member when manufacturing a semiconductor device. An object of the present invention is to provide a semiconductor device that can be bonded to an element in a non-contact manner and can effectively prevent overheating of the semiconductor element.
前記の目的を達成するため、請求項１に記載の発明は、半導体素子と、前記半導体素子の上面電極に対向する貫通部を有し、かつ前記半導体素子に対して導電性接合材を介して接合されたバスバーと、一部が前記貫通部を貫通し、かつ上面が前記バスバーの上面より上側に位置する状態で、前記バスバーに一部が接触するとともに前記半導体素子に対して離間した状態で前記導電性接合材を介して接合された過熱抑制防止部材とを有する。ここで、「過熱抑制防止部材」とは、熱を一時的に蓄えた後、放熱する蓄熱体（ヒートマス）又は半導体素子の熱を半導体素子より低温部に伝達（放熱）する放熱体を意味する。 In order to achieve the above object, the invention according to claim 1 includes a semiconductor element and a through portion facing the upper surface electrode of the semiconductor element, and a conductive bonding material is provided to the semiconductor element. In a state where a part of the bus bar is joined to the bus bar and the upper surface is located above the upper surface of the bus bar, the bus bar is partly in contact with the bus bar and separated from the semiconductor element. And an overheat suppression preventing member bonded through the conductive bonding material. Here, the “overheat suppression preventing member” means a heat storage body (heat mass) that radiates heat after temporarily storing heat, or a heat radiating body that transfers (heatsinks) the heat of the semiconductor element to a lower temperature part than the semiconductor element. .
この発明では、過熱抑制防止部材は上面がバスバーの上面より上側に位置し、かつ一部がバスバーを貫通して配置されているため、使用する過熱抑制防止部材及びバスバーの厚さを従来と同様にした場合、半導体装置が小型化される。また、過熱抑制防止部材は一部がバスバーの貫通部を貫通し、かつバスバーに接触して配置されるため、バスバーが過熱抑制防止部材の位置決め機能を果たし、一部を半導体素子に近づけた状態で配置するのが容易になる。したがって、半導体素子の過熱を抑制、防止する過熱抑制防止部材を半導体装置の製造時に、位置規制部材を必要とせずに半導体素子に非接触で接合することができ、しかも、半導体素子の過熱抑制防止を効果的に行うことができる。 In this invention, since the upper surface of the overheat suppression prevention member is located above the upper surface of the bus bar and a part thereof is disposed through the bus bar, the thickness of the overheat suppression prevention member and the bus bar to be used is the same as the conventional one. In this case, the semiconductor device is downsized. In addition, the overheat suppression prevention member is partly penetrating the through part of the bus bar and is disposed in contact with the bus bar, so that the bus bar performs the positioning function of the overheat suppression prevention member and part of the overheat suppression prevention member is close to the semiconductor element. It becomes easy to arrange with. Accordingly, an overheat suppression preventing member that suppresses or prevents overheating of the semiconductor element can be joined to the semiconductor element in a non-contact manner without using a position regulating member during the manufacture of the semiconductor device, and further, overheating suppression of the semiconductor element can be prevented. Can be carried out effectively.
請求項２に記載の発明は、請求項１に記載の発明において、前記過熱抑制防止部材は前記貫通部内に位置する凸部を有し、前記凸部は前記半導体素子に非接触で接合されている。この発明では、過熱抑制防止部材は凸部を有し、その凸部がバスバーに形成された貫通部内に位置するため、凸部を有さない過熱抑制防止部材に比べて、過熱抑制防止部材の一部を半導体素子に近付けて配置することが容易になり、半導体素子で発生した熱が必要に応じて効率良く過熱抑制防止部材に伝導される。そして、過熱抑制防止部材がヒートマスであれば、過負荷時に効率良く半導体素子の熱の一部を蓄熱することができ、過熱抑制防止部材が放熱体であれば半導体素子の熱が効率良く放熱される。 According to a second aspect of the present invention, in the first aspect of the invention, the overheat suppression preventing member has a convex portion located in the through portion, and the convex portion is joined to the semiconductor element in a non-contact manner. Yes. In this invention, since the overheat suppression prevention member has a convex part and the convex part is located in the penetration part formed in the bus bar, the overheat suppression prevention member of the overheat suppression prevention member does not have the convex part. It becomes easy to dispose a part close to the semiconductor element, and heat generated in the semiconductor element is efficiently conducted to the overheat suppression preventing member as necessary. If the overheat suppression preventing member is a heat mass, a part of the heat of the semiconductor element can be stored efficiently during an overload, and if the overheat suppression preventing member is a heat radiator, the heat of the semiconductor element is efficiently dissipated. The
請求項３に記載の発明は、請求項１又は請求項２に記載の発明において、前記半導体装置は車載用である。車両は乗員や荷物などの収容スペースをなるべく広く確保するため、車両に搭載されて使用される電子機器は小型で収容スペースの自由度が高いものが好ましい。請求項１又は請求項２に記載の発明は、この要求を満たしているため、車載用として好ましい。 According to a third aspect of the present invention, in the first or second aspect of the present invention, the semiconductor device is for vehicle use. In order for the vehicle to secure as much space as possible for passengers and luggage, it is preferable that the electronic device mounted on the vehicle is small and has a high degree of freedom in the space. The invention described in claim 1 or 2 satisfies this requirement and is therefore preferable for in-vehicle use.
本発明によれば、半導体素子の過熱を抑制、防止する過熱抑制防止部材を半導体装置の製造時に、位置規制部材を必要とせずに半導体素子に非接触で接合することができ、しかも、半導体素子の過熱抑制防止を効果的に行うことができる半導体装置を提供することができる。 According to the present invention, an overheat suppression preventing member that suppresses or prevents overheating of a semiconductor element can be joined to the semiconductor element in a non-contact manner without using a position regulating member during the manufacture of the semiconductor device. It is possible to provide a semiconductor device capable of effectively preventing overheating of the semiconductor device.
（第１の実施形態）
以下、本発明を車両に搭載されて使用される半導体装置（半導体モジュール）に具体化した第１の実施形態を図１〜図３にしたがって説明する。
(First embodiment)
Hereinafter, a first embodiment in which the present invention is embodied in a semiconductor device (semiconductor module) mounted on a vehicle and used will be described with reference to FIGS.
図１（ａ），（ｂ）に示すように、半導体装置１０は、下部電極を兼ねたヒートスプレッダ１１上に半導体素子１２が導電性接合材としての半田１３を介して接合されている。この実施形態では半導体素子１２としてＩＧＢＴが使用されており、半導体素子１２はコレクタ電極（図示せず）が下面に位置する状態でヒートスプレッダ１１に接合されている。半導体素子１２の上面には半田１３を介して上部電極としてのバスバー１４が接合されている。半導体素子１２は上面に上面電極としてエミッタ電極（図示せず）及びゲート電極１５（図１（ａ）に図示）を有し、図１（ａ）に示すように、バスバー１４はゲート電極１５が露出した状態で、エミッタ電極に接続されて半導体素子１２の上面に接合されている。図２（ｂ）に示すように、バスバー１４は、平面矩形状に形成されるとともに、長手方向の一端寄りに貫通部としての貫通孔１６を複数個（この実施形態では２個）有する。 As shown in FIGS. 1A and 1B, in a semiconductor device 10, a semiconductor element 12 is bonded to a heat spreader 11 that also serves as a lower electrode via a solder 13 as a conductive bonding material. In this embodiment, an IGBT is used as the semiconductor element 12, and the semiconductor element 12 is joined to the heat spreader 11 with a collector electrode (not shown) positioned on the lower surface. A bus bar 14 as an upper electrode is joined to the upper surface of the semiconductor element 12 via a solder 13. The semiconductor element 12 has an emitter electrode (not shown) and a gate electrode 15 (shown in FIG. 1 (a)) as upper surface electrodes on the upper surface, and as shown in FIG. In an exposed state, it is connected to the emitter electrode and joined to the upper surface of the semiconductor element 12. As shown in FIG. 2B, the bus bar 14 is formed in a planar rectangular shape, and has a plurality of through holes 16 (two in this embodiment) as penetrating portions near one end in the longitudinal direction.
半導体装置１０は、上部に過熱抑制防止部材としてのヒートマス１７を有する。図２（ａ）に示すように、ヒートマス１７は直方体状の本体１７ａの下面から２個の凸部（脚部）１７ｂが突出した構造である。そして、図１（ｂ）に示すように、２個の凸部１７ｂが貫通孔１６を貫通し、かつその先端（下端）が半導体素子１２に対して非接触の状態で、本体１７ａの下面がバスバー１４の上面に接触した状態で半田１３を介して半導体素子１２に接合されている。 The semiconductor device 10 has a heat mass 17 as an overheat suppression preventing member at the top. As shown in FIG. 2A, the heat mass 17 has a structure in which two convex portions (leg portions) 17b protrude from the lower surface of a rectangular parallelepiped main body 17a. As shown in FIG. 1B, the two convex portions 17b pass through the through hole 16, and the tip (lower end) thereof is not in contact with the semiconductor element 12, and the lower surface of the main body 17a is In contact with the upper surface of the bus bar 14, it is joined to the semiconductor element 12 via the solder 13.
即ち、半導体装置１０は、半導体素子１２と、半導体素子１２の上面電極に対向する貫通孔１６を有し、かつ半導体素子１２に対して半田１３を介して接合されたバスバー１４を有する。また、半導体装置１０は、一部が貫通孔１６を貫通し、かつ上面がバスバー１４の上面より上側に位置する状態でバスバー１４に一部が接触するとともに半導体素子１２に対して離間した状態で半田１３を介して接合されたヒートマス１７を有する。 That is, the semiconductor device 10 includes a semiconductor element 12 and a bus bar 14 having a through hole 16 facing the upper surface electrode of the semiconductor element 12 and joined to the semiconductor element 12 via the solder 13. In addition, the semiconductor device 10 is in a state where a part of the semiconductor device 10 penetrates the through hole 16 and a part of the semiconductor device 10 is in contact with the bus bar 14 and is separated from the semiconductor element 12 in a state where the upper surface is located above the upper surface of the bus bar 14. It has a heat mass 17 joined through solder 13.
次に半導体装置１０の製造方法を説明する。
先ず、ヒートスプレッダ１１の一方の面に半導体素子１２をその下面において半田接合する。次に半導体素子１２の上面のエミッタ電極にバスバー１４を半田接合する。そして、半田１３の溶融状態において、ヒートマス１７を２個の凸部１７ｂがバスバー１４の貫通孔１６に挿通される状態にバスバー１４上に配置する。ヒートマス１７は銅製で半田１３より比重が大きいため、図１（ｂ）に示すように、ヒートマス１７は、本体１７ａの下面がバスバー１４の上面に２個の貫通孔１６の間において接触した状態になるまで２個の凸部１７ｂが半田１３内に浸入し、その状態で半田１３が固化する。そして、バスバー１４及びヒートマス１７は半田１３を介して半導体素子１２に接合される。
Next, a method for manufacturing the semiconductor device 10 will be described.
First, the semiconductor element 12 is solder-bonded to the one surface of the heat spreader 11 on its lower surface. Next, the bus bar 14 is soldered to the emitter electrode on the upper surface of the semiconductor element 12. Then, in the molten state of the solder 13, the heat mass 17 is arranged on the bus bar 14 so that the two convex portions 17 b are inserted into the through holes 16 of the bus bar 14. Since the heat mass 17 is made of copper and has a specific gravity greater than that of the solder 13, the heat mass 17 is in a state where the lower surface of the main body 17a is in contact with the upper surface of the bus bar 14 between the two through holes 16 as shown in FIG. Until then, the two protrusions 17b enter the solder 13, and the solder 13 is solidified in this state. The bus bar 14 and the heat mass 17 are joined to the semiconductor element 12 via the solder 13.
ヒートマス１７の材質としては、半導体素子１２とヒートマス１７とを接合する半田１３より高融点の金属が好ましい。
ヒートマス１７のサイズとしては、ヒートマス１７を図１（ｂ）の上から見た大きさが、半導体素子１２の発熱箇所と同等〜半導体素子１２全体のサイズにするのがスペースと熱抵抗の両観点から好ましく、厚みを適宜変更して必要な熱容量を確保すればよい。
The material of the heat mass 17 is preferably a metal having a melting point higher than that of the solder 13 that joins the semiconductor element 12 and the heat mass 17.
As for the size of the heat mass 17, the size when the heat mass 17 is viewed from above in FIG. 1B is the same as the heat generation portion of the semiconductor element 12 to the size of the entire semiconductor element 12 in terms of both space and thermal resistance. Preferably, the necessary heat capacity can be ensured by changing the thickness as appropriate.
ヒートマス１７を半導体素子１２に半田接合する際、ヒートマス１７の一部が半導体素子１２と接触した状態で半導体素子１２に接合されるのを規制する規制部材の役割をバスバー１４が果たす。そのため、規制部材の役割を果たす治具を用いずに、ヒートマス１７の一部、この実施形態では凸部１７ｂの先端が半導体素子１２に接触せず、かつ半導体素子１２の上面近くに位置する状態でヒートマス１７を半導体素子１２に接合することができる。 When soldering the heat mass 17 to the semiconductor element 12, the bus bar 14 serves as a regulating member that regulates that a part of the heat mass 17 is bonded to the semiconductor element 12 in contact with the semiconductor element 12. Therefore, a state in which a part of the heat mass 17, in this embodiment, the tip of the convex portion 17 b does not contact the semiconductor element 12 and is located near the upper surface of the semiconductor element 12 without using a jig serving as a regulating member. The heat mass 17 can be bonded to the semiconductor element 12.
前記のように構成された半導体装置１０は、例えば、車載用のインバータの部品として使用される。インバータは、例えば、６個の半導体装置１０と、半導体素子１２としてダイオードが使用された６個の半導体装置を備える。 The semiconductor device 10 configured as described above is used, for example, as a component of an in-vehicle inverter. The inverter includes, for example, six semiconductor devices 10 and six semiconductor devices using diodes as the semiconductor elements 12.
図３に示すように、インバータ２０は、冷却媒体が流れる冷媒流路２１ａを備えた冷却器２１上に絶縁層２２を介して形成された配線層２３に対して、半導体装置１０や他の半導体装置がヒートスプレッダ１１において半田接合される。図３には２個の半導体装置１０のみが図示されているが、冷却器２１上には合計６個のＩＧＢＴ用の半導体装置と、６個のダイオード用の半導体装置が同様に接合され、さらに必要な部品の接合や配線が行われてインバータ２０が構成される。 As shown in FIG. 3, the inverter 20 has a semiconductor device 10 and other semiconductors with respect to the wiring layer 23 formed via the insulating layer 22 on the cooler 21 having the refrigerant flow path 21 a through which the cooling medium flows. The apparatus is soldered at the heat spreader 11. Although only two semiconductor devices 10 are illustrated in FIG. 3, a total of six semiconductor devices for IGBT and six semiconductor devices for diode are similarly joined on the cooler 21. Necessary parts are joined and wired to constitute the inverter 20.
ヒートマス１７の熱容量は、過負荷等によって半導体素子１２から定常発熱状態より大きな熱が発生して、冷却器２１による冷却機能が足りなくなった際、半導体素子１２で発生した熱の一部を一時的に吸収して半導体素子１２が過熱状態になることを抑制するのに必要な値に設定されている。例えば、ハイブリッド車の走行用モータの制御に使用されるインバータの場合、定常運転状態から急な加速あるいは急停止の場合、１秒未満の短時間で半導体素子１２からの発熱で定格の３〜５倍もの損失熱量が発生する。この実施形態においては、その際に、半導体素子１２の温度が動作温度の上限を超えないように設定される。なお、急停止の場合に過大な損失熱量が発生するのは、回生動作が行われるために大きな電流が流れるからである。 When the heat capacity of the heat mass 17 is larger than that of the steady heat generation state from the semiconductor element 12 due to overload or the like, and the cooling function by the cooler 21 is insufficient, a part of the heat generated in the semiconductor element 12 is temporarily stored. The value is set to a value necessary to suppress the semiconductor element 12 from being overheated and absorbed. For example, in the case of an inverter used for controlling a driving motor of a hybrid vehicle, when sudden acceleration or sudden stop is caused from a steady operation state, the heat generated from the semiconductor element 12 is rated 3-5 in a short time of less than 1 second. Double heat loss is generated. In this embodiment, the temperature of the semiconductor element 12 is set so as not to exceed the upper limit of the operating temperature. The excessive heat loss is generated in the case of a sudden stop because a large current flows because the regenerative operation is performed.
次に前記のように構成されたインバータ２０の作用を説明する。インバータ２０は、例えば、車両としてのハイブリッド車に搭載されて走行用モータの駆動制御に使用される。冷却器２１は、車両に装備された冷媒循環路に連結される。 Next, the operation of the inverter 20 configured as described above will be described. The inverter 20 is mounted on, for example, a hybrid vehicle as a vehicle and is used for driving control of a traveling motor. The cooler 21 is connected to a refrigerant circulation path equipped in the vehicle.
半導体装置１０等に搭載された半導体素子１２が駆動されると、半導体素子１２から熱が発生する。定常運転状態（定常発熱状態）では、半導体素子１２から発生した熱は、半田１３、ヒートスプレッダ１１等を介して冷却器２１に伝導される。冷却器２１に伝導された熱は、冷媒流路２１ａを流れる冷却媒体に伝導されるとともに持ち去られる。即ち、冷却器２１は、冷媒流路２１ａを流れる冷却媒体によって強制冷却されるため、半導体素子１２等から冷却器２１に至る熱の伝導経路における温度勾配が大きくなり、半導体素子１２で発生した熱がヒートスプレッダ１１を介して効率良く除去される。 When the semiconductor element 12 mounted on the semiconductor device 10 or the like is driven, heat is generated from the semiconductor element 12. In a steady operation state (steady heat generation state), heat generated from the semiconductor element 12 is conducted to the cooler 21 via the solder 13, the heat spreader 11, and the like. The heat conducted to the cooler 21 is conducted to the cooling medium flowing through the refrigerant flow path 21a and taken away. That is, since the cooler 21 is forcibly cooled by the cooling medium flowing through the refrigerant flow path 21a, the temperature gradient in the heat conduction path from the semiconductor element 12 or the like to the cooler 21 is increased, and the heat generated in the semiconductor element 12 is increased. Is efficiently removed through the heat spreader 11.
定常運転状態から急な加速あるいは急な停止が行われると、半導体素子１２からの発熱が急増し、１秒以下の短時間で定格の３〜５倍もの損失熱量が発生する。この非定常時の高発熱に対しては、冷却器２１による強制冷却だけでは対処できない。しかし、半導体素子１２にはヒートマス１７が半田付けされているため、冷却器２１で除去できない熱がヒートマス１７に一時的に吸収される。そして、定常運転状態に戻ると、ヒートマス１７の熱が半導体素子１２及びヒートスプレッダ１１等を介して冷却器２１へ伝導され、ヒートマス１７は元の状態に戻る。 When sudden acceleration or sudden stop is performed from the steady operation state, the heat generation from the semiconductor element 12 rapidly increases, and a heat loss of 3 to 5 times the rating is generated in a short time of 1 second or less. This unsteady high heat generation cannot be dealt with only by forced cooling by the cooler 21. However, since the heat mass 17 is soldered to the semiconductor element 12, heat that cannot be removed by the cooler 21 is temporarily absorbed by the heat mass 17. When returning to the steady operation state, the heat of the heat mass 17 is conducted to the cooler 21 via the semiconductor element 12 and the heat spreader 11 and the heat mass 17 returns to the original state.
したがって、この実施形態によれば、以下に示す効果を得ることができる。
（１）半導体装置１０は、半導体素子１２と、半導体素子１２の上面電極に対向する貫通孔１６を有し、かつ半導体素子１２に対して半田１３を介して接合されたバスバー１４とを有する。また半導体装置１０は、一部が貫通孔１６を貫通し、かつ上面がバスバー１４の上面より上側に位置する状態で、バスバー１４に一部が接触するとともに半導体素子１２に対して離間した状態で半田１３を介して接合されたヒートマス１７を有する。したがって、半導体素子１２の過熱を抑制、防止するヒートマス１７を半導体装置１０の製造時に、位置規制部材を必要とせずに半導体素子１２に非接触で接合することができ、しかも、半導体素子１２の過熱抑制防止を効果的に行うことができる。
Therefore, according to this embodiment, the following effects can be obtained.
(1) The semiconductor device 10 includes a semiconductor element 12 and a bus bar 14 having a through hole 16 facing the upper surface electrode of the semiconductor element 12 and joined to the semiconductor element 12 via a solder 13. Further, the semiconductor device 10 is in a state in which a part thereof penetrates the through-hole 16 and the upper surface is located above the upper surface of the bus bar 14, and a part of the semiconductor device 10 is in contact with the bus bar 14 and separated from the semiconductor element 12. It has a heat mass 17 joined through solder 13. Therefore, the heat mass 17 that suppresses and prevents overheating of the semiconductor element 12 can be joined to the semiconductor element 12 in a non-contact manner without the need for a position regulating member when the semiconductor device 10 is manufactured. It is possible to effectively prevent the suppression.
（２）ヒートマス１７は貫通孔１６内に位置する凸部１７ｂを有し、凸部１７ｂは半導体素子１２に非接触で接合されている。したがって、凸部を有さないヒートマス１７に比べて、ヒートマス１７の一部を半導体素子１２に近付けて配置することが容易になり、半導体素子１２で発生した熱が必要に応じて効率良くヒートマス１７に伝導される。 (2) The heat mass 17 has a convex portion 17 b located in the through hole 16, and the convex portion 17 b is joined to the semiconductor element 12 in a non-contact manner. Therefore, as compared with the heat mass 17 having no convex portion, it becomes easy to dispose a part of the heat mass 17 close to the semiconductor element 12, and the heat generated in the semiconductor element 12 can be efficiently performed as needed. Conducted by
（３）ヒートマス１７は、本体１７ａの下面に形成された複数の凸部１７ｂがバスバー１４に形成された複数の貫通孔１６に、貫通孔１６の間のバスバー１４の上面を跨ぐように挿入された状態で半田１３を介して半導体素子１２に接合され、ヒートマス１７の比重が半田１３の比重より大きい。したがって、半導体装置１０の製造時に、バスバー１４を半田１３で半導体素子１２に接合する際、半田１３の溶融状態のときに、複数の凸部１７ｂを貫通孔１６に挿入する状態で、ヒートマス１７をバスバー１４上に載置（配置）することにより、簡単にヒートマス１７を適切な状態で半導体素子１２に接合することができる。 (3) The heat mass 17 is inserted into the plurality of through holes 16 formed in the bus bar 14 so that the plurality of convex portions 17b formed on the lower surface of the main body 17a straddles the upper surface of the bus bar 14 between the through holes 16. In this state, the heat mass 17 is bonded to the semiconductor element 12 via the solder 13, and the specific gravity of the heat mass 17 is larger than that of the solder 13. Accordingly, when the bus bar 14 is joined to the semiconductor element 12 with the solder 13 when the semiconductor device 10 is manufactured, the heat mass 17 is inserted in the state in which the plurality of protrusions 17b are inserted into the through holes 16 when the solder 13 is in a molten state. By placing (arranging) on the bus bar 14, the heat mass 17 can be easily joined to the semiconductor element 12 in an appropriate state.
（４）半導体装置１０は、同様な構成の他の半導体装置と共に冷却器２１上に実装されて車載用のインバータ２０を構成する。そして、定常運転状態から急な加速あるいは急な停止が行われると、冷却器２１のみでは除去できない熱が半導体素子１２から発生するが、その熱がヒートマス１７に一時的に吸収されることにより、過渡的に半導体素子１２の発熱量が多くなっても、半導体素子１２の過熱の抑制防止の対処ができる。 (4) The semiconductor device 10 is mounted on the cooler 21 together with another semiconductor device having the same configuration to constitute the in-vehicle inverter 20. When sudden acceleration or sudden stop is performed from the steady operation state, heat that cannot be removed only by the cooler 21 is generated from the semiconductor element 12, but the heat is temporarily absorbed by the heat mass 17, Even if the heat generation amount of the semiconductor element 12 increases transiently, it is possible to prevent the semiconductor element 12 from being overheated.
（第２の実施形態）
次に第２の実施形態を図４にしたがって説明する。この実施形態では、インバータ２０は、ヒートスプレッダ１１上に半導体素子１２が半田１３を介して接合された半導体装置１０を形成せずに、冷却器２１上に絶縁基板を介して、トランジスタやダイオードとしての半導体素子１２が直接半田接合されて構成されている点が第１の実施形態と異なる。第１の実施形態と同一部分は同一符号を付して詳しい説明を省略する。
(Second Embodiment)
Next, a second embodiment will be described with reference to FIG. In this embodiment, the inverter 20 does not form the semiconductor device 10 in which the semiconductor element 12 is joined via the solder 13 on the heat spreader 11, but serves as a transistor or a diode via the insulating substrate on the cooler 21. The semiconductor device 12 is different from the first embodiment in that the semiconductor device 12 is configured by direct solder bonding. The same parts as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.
図４に示すように、インバータ２０は、冷却器２１上に接合された絶縁基板２４上に複数の半導体素子１２が実装されている。絶縁基板２４として、ＤＢＡ基板（ダイレクト・ブレージング・アルミニウム基板）を用いており、図４に示すように、セラミック基板２５の一方の面（下面）に形成されたアルミニウム層２６が冷却器２１に接合され、他方の面（上面）に形成されたアルミニウム層が配線層２７を構成している。そして、半導体素子１２は、配線層２７上に半田１３を介して接合されている。 As shown in FIG. 4, the inverter 20 has a plurality of semiconductor elements 12 mounted on an insulating substrate 24 bonded on a cooler 21. A DBA substrate (direct brazing aluminum substrate) is used as the insulating substrate 24, and an aluminum layer 26 formed on one surface (lower surface) of the ceramic substrate 25 is bonded to the cooler 21 as shown in FIG. The aluminum layer formed on the other surface (upper surface) constitutes the wiring layer 27. The semiconductor element 12 is bonded to the wiring layer 27 via the solder 13.
半導体素子１２としては、三相用のインバータ２０を構成する６個のトランジスタ（ＩＧＢＴ）及び６個のダイオードが接合されている。
この実施形態では、第１の実施形態の（１）〜（４）と基本的に同様の効果を有する他に、次の効果を有する。
As the semiconductor element 12, six transistors (IGBTs) and six diodes constituting the three-phase inverter 20 are joined.
This embodiment has the following effects in addition to basically the same effects as (1) to (4) of the first embodiment.
（５）半導体素子１２は、ヒートスプレッダ１１を介さずに冷却器２１に対して絶縁基板２４を介して接続されている。そのため、製造工数が少なくなる。
実施形態は前記に限定されるものではなく、例えば、次のように具体化してもよい。
(5) The semiconductor element 12 is connected to the cooler 21 via the insulating substrate 24 without passing through the heat spreader 11. As a result, the number of manufacturing steps is reduced.
The embodiment is not limited to the above, and may be embodied as follows, for example.
○ ヒートマス１７の大きさは、過負荷等によって半導体素子１２から定常発熱状態より大きな熱が発生した場合に、その熱を一時的に吸収可能な熱容量を有していれば、どのような大きさでもよい。 ○ When the heat mass 17 has a heat capacity capable of temporarily absorbing heat when the semiconductor element 12 generates heat larger than the steady heat generation state due to overload or the like, any size is possible. But you can.
○ ヒートマス１７の凸部（脚部）１７ｂの長さは、半導体素子１２に触れない範囲であればよい。また、凸部１７ｂが複数の場合、凸部１７ｂの長さが異なってもよい。しかし、凸部１７ｂの先端が半導体素子１２に近い方が過渡熱を効果的に吸収し易い。 The length of the convex portion (leg portion) 17 b of the heat mass 17 may be in a range that does not touch the semiconductor element 12. Moreover, when there are a plurality of convex portions 17b, the lengths of the convex portions 17b may be different. However, it is easier to effectively absorb the transient heat when the tip of the convex portion 17b is closer to the semiconductor element 12.
○ バスバー１４が有する貫通孔１６の数は、２個に限らず、３個以上でもあるいは１個でもよい。
○ 貫通孔１６が１個の場合、例えば、図５（ａ）に示すように、貫通孔１６の幅をバスバー１４の幅の半分より大きな幅にして、凸部１７ｂの幅もバスバー１４の幅の半分より大きな幅にした方が、同じ熱容量のヒートマス１７として高さを低くすることができ、小型化に寄与する。
The number of through holes 16 included in the bus bar 14 is not limited to two, and may be three or more or one.
○ When there is one through hole 16, for example, as shown in FIG. 5A, the width of the through hole 16 is larger than half the width of the bus bar 14, and the width of the convex portion 17 b is also the width of the bus bar 14. If the width is larger than half, the height of the heat mass 17 having the same heat capacity can be reduced, which contributes to downsizing.
○ ヒートマス１７は本体１７ａの下面に凸部１７ｂを有する形状に限らず、図５（ｂ）に示すように、上面側から下面側に向かってその幅が次第に狭くなる形状であってもよい。この場合、ヒートマス１７の側面がバスバー１４の貫通孔１６の上端に線接触した状態で位置決めされて、半導体素子１２に半田１３を介して接合される。 The heat mass 17 is not limited to the shape having the convex portion 17b on the lower surface of the main body 17a, but may have a shape in which the width gradually decreases from the upper surface side toward the lower surface side as shown in FIG. In this case, the side surface of the heat mass 17 is positioned in line contact with the upper end of the through hole 16 of the bus bar 14, and is bonded to the semiconductor element 12 via the solder 13.
○ ヒートマス１７の形状は、凸部１７ｂを有する形状や上面側から下面側に向かって幅が狭くなる形状に限らず、上面側から下面側まで一定幅、即ち直方体であってもよい。例えば、直方体のヒートマス１７であっても、その幅と貫通孔１６の幅が近ければ、図６（ａ）に示すように、ヒートマス１７は傾いた状態で、一方の側面がバスバー１４の貫通孔１６の上端に線接触し、他方の側面の下端が貫通孔１６に線接触した状態で、半導体素子１２に対して半田１３を介して接合される。 The shape of the heat mass 17 is not limited to the shape having the convex portion 17b or the shape in which the width becomes narrower from the upper surface side to the lower surface side, but may be a constant width from the upper surface side to the lower surface side, that is, a rectangular parallelepiped. For example, even if it is a rectangular parallelepiped heat mass 17, if the width and the width of the through hole 16 are close, as shown in FIG. 6A, the heat mass 17 is inclined and one side surface is the through hole of the bus bar 14. It is joined to the semiconductor element 12 via the solder 13 in a state where it is in line contact with the upper end of 16 and the lower end of the other side surface is in line contact with the through hole 16.
○ 図６（ｂ）に示すように、ヒートマス１７の形状は直方体とし、バスバー１４の貫通孔１６の形状は下方に向かって断面積が次第に小さくなる四角錐台状とし、ヒートマス１７は、その下端が貫通孔１６の壁面と線接触する状態で半田１３に接合されるようにしてもよい。 As shown in FIG. 6B, the shape of the heat mass 17 is a rectangular parallelepiped, the shape of the through hole 16 of the bus bar 14 is a quadrangular frustum shape whose cross-sectional area gradually decreases downward, and the heat mass 17 has a lower end. May be joined to the solder 13 in line contact with the wall surface of the through hole 16.
○ バスバー１４が有する貫通孔１６の数と、ヒートマス１７が有する凸部１７ｂの数とは同じでなくてもよい。例えば、１個の貫通孔１６に複数の凸部１７ｂが挿入されてもよいし、凸部１７ｂの挿通されていない貫通孔１６が存在してもよい。 The number of through holes 16 included in the bus bar 14 and the number of convex portions 17b included in the heat mass 17 may not be the same. For example, a plurality of convex portions 17b may be inserted into one through hole 16, or a through hole 16 in which the convex portion 17b is not inserted may exist.
○ ヒートマス１７は１個のバスバー１４に対して１個に限らず、複数あってもよい。
○ 貫通孔１６に代えて切り欠きを貫通部としてバスバー１４に形成してもよい。
○ 貫通部として貫通孔１６及び切り欠きが混在してもよい。
The heat mass 17 is not limited to one for each bus bar 14 and may be plural.
In place of the through hole 16, a notch may be formed in the bus bar 14 as a through portion.
O The through-hole 16 and a notch may be mixed as a penetration part.
○ ヒートマス１７はバスバー１４に接していなくてもよい。ヒートマス１７及び半田１３の比重とヒートマス１７の形状によっては、溶融状態の半田１３上にヒートマス１７を載置した場合、ヒートマス１７が半田１３からの浮力によりバスバー１４と接触しない状態で半田１３が固化し、ヒートマス１７は半導体素子１２及びバスバー１４の両者に接触せずに、半導体素子１２に接合される。 ○ The heat mass 17 may not be in contact with the bus bar 14. Depending on the specific gravity of the heat mass 17 and the solder 13 and the shape of the heat mass 17, when the heat mass 17 is placed on the molten solder 13, the solder 13 is solidified without the heat mass 17 coming into contact with the bus bar 14 due to buoyancy from the solder 13. The heat mass 17 is bonded to the semiconductor element 12 without contacting both the semiconductor element 12 and the bus bar 14.
○ 導電性接合材は半田１３に限らず、溶融（液）状態から固化（硬化）することによりバスバー１４及びヒートマス１７を半導体素子１２に対して接合可能なものであればよい。例えば、エポキシ樹脂に導電性フィラーとして銀が含有されたものでもよい。 The conductive bonding material is not limited to the solder 13 and may be any material that can bond the bus bar 14 and the heat mass 17 to the semiconductor element 12 by solidifying (curing) from a molten (liquid) state. For example, the epoxy resin may contain silver as a conductive filler.
○ ヒートマス１７の材料は導電性接合材により接合可能な表面を持ち、必要な熱容量を確保可能なものなら何の材料でもよい。
○ ヒートマス１７は、凸部１７ｂの一部が導電性接合材と接合している状態でも、全部が接合している状態でもよい。
The material of the heat mass 17 may be any material as long as it has a surface that can be bonded by a conductive bonding material and can secure a necessary heat capacity.
The heat mass 17 may be in a state in which a part of the convex portion 17b is bonded to the conductive bonding material or in a state in which all are bonded.
○ ヒートマス１７は、凸部１７ｂ以外に導電性接合材と接触していてもいなくてもよい。
○ ヒートマス１７は、凸部１７ｂが横方向の位置決めを行ってもよいし、凸部１７ｂ以外に位置決め部分を持ってもよい。
The heat mass 17 may or may not be in contact with the conductive bonding material other than the convex portion 17b.
The heat mass 17 may be positioned in the horizontal direction by the convex portion 17b, or may have a positioning portion other than the convex portion 17b.
○ バスバー１４がヒートマス１７の位置決め部分を持ってもよい。
○ 半導体装置１０は、ヒートスプレッダ１１に複数の半導体素子１２が接合され、バスバー１４も１個のバスバー１４が複数の半導体素子１２に対して接合されてもよい。例えば、インバータを構成するスイッチング素子としてのトランジスタ（ＩＧＢＴ）と、そのトランジスタに逆並列に接続されるダイオードとが、半導体素子１２としてヒートスプレッダ１１に接合された構成としてもよい。
The bus bar 14 may have a positioning portion for the heat mass 17.
In the semiconductor device 10, the plurality of semiconductor elements 12 may be bonded to the heat spreader 11, and the bus bar 14 may be bonded to the plurality of semiconductor elements 12. For example, a transistor (IGBT) as a switching element constituting an inverter and a diode connected in antiparallel to the transistor may be joined to the heat spreader 11 as the semiconductor element 12.
○ トランジスタとしての半導体素子１２は、ＩＧＢＴに限らずパワーＭＯＳＦＥＴのようなトランジスタであってもよい。また、トランジスタに限らず、サイリスタであってもよい。 The semiconductor element 12 as a transistor is not limited to an IGBT but may be a transistor such as a power MOSFET. The transistor is not limited to a thyristor.
○ 冷却器２１を流れる冷却媒体は液体に限らず、例えば、空気などの気体であってもよい。
○ 冷却器２１は強制冷却式の冷却器に限らず、放熱板であってもよい。
(Circle) the cooling medium which flows through the cooler 21 is not restricted to a liquid, For example, gas, such as air, may be sufficient.
The cooler 21 is not limited to a forced cooling type cooler, and may be a heat sink.
○ 冷却器２１上に各半導体素子１２に対応して絶縁基板２４を接合せず、複数の半導体素子１２に対して１つの絶縁基板２４を接合した構成や、１つの絶縁基板２４上に全ての半導体素子１２を接合した構成としてもよい。 A structure in which one insulating substrate 24 is bonded to a plurality of semiconductor elements 12 without bonding the insulating substrate 24 corresponding to each semiconductor element 12 on the cooler 21, or all the elements on one insulating substrate 24 The semiconductor element 12 may be joined.
以下の技術的思想（発明）は前記実施形態から把握できる。
（１）請求項２又は請求項３に記載の発明において、前記バスバーは複数の前記貫通部を有し、前記過熱抑制防止部材は本体の下面に複数の前記凸部を有し、複数の前記凸部がそれぞれ異なる前記貫通部に挿通され、前記本体の下面が前記バスバーの上面と面接触している。
The following technical idea (invention) can be understood from the embodiment.
(1) In invention of Claim 2 or Claim 3, the said bus-bar has several said penetration part, the said overheat suppression prevention member has several said convex part in the lower surface of a main body, and several said said The convex portions are inserted through the different through portions, and the lower surface of the main body is in surface contact with the upper surface of the bus bar.
（２）請求項１〜請求項３及び前記技術的思想（１）のいずれか一項に記載の発明において、前記過熱抑制防止部材はヒートマスである。
（３）下面電極が冷却器に接合され、上面電極がバスバーに接合された半導体素子を有し、一部が前記バスバーに形成された貫通部を貫通し、かつ上面が前記バスバーの上面より上側に位置するように導電性接合材を介して前記半導体素子に対して接合された過熱抑制防止部材を有する半導体装置の製造方法であって、前記バスバーを前記半導体素子に前記導電性接合材を介して接合する際、前記導電性接合材の溶融状態において、前記過熱抑制防止部材を、その一部が前記貫通部を挿通する状態で前記バスバー上に配置して、前記過熱抑制防止部材を前記半導体素子に接合することを特徴とする半導体装置の製造方法。
(2) In the invention according to any one of claims 1 to 3 and the technical idea (1), the overheat suppression preventing member is a heat mass.
(3) A semiconductor element having a lower surface electrode bonded to a cooler and an upper surface electrode bonded to a bus bar, part of which penetrates a through portion formed in the bus bar, and the upper surface is above the upper surface of the bus bar. A method of manufacturing a semiconductor device having an overheat suppression preventing member bonded to the semiconductor element via a conductive bonding material so as to be located in the bus bar, wherein the bus bar is connected to the semiconductor element via the conductive bonding material. In the molten state of the conductive bonding material, the overheat suppression preventing member is disposed on the bus bar in a state where a part of the overheating suppression preventing member is inserted through the through portion, and the overheat suppression preventing member is disposed on the semiconductor. A method for manufacturing a semiconductor device, comprising bonding to an element.
１２…半導体素子、１３…導電性接合材としての半田、１４…バスバー、１６…貫通部としての貫通孔、１７…過熱抑制防止部材としてのヒートマス、１７ｂ…凸部。 DESCRIPTION OF SYMBOLS 12 ... Semiconductor element, 13 ... Solder as electroconductive joining material, 14 ... Bus bar, 16 ... Through-hole as penetration part, 17 ... Heat mass as overheat suppression prevention member, 17b ... Convex part.
Claims (3)
前記半導体素子の上面電極に対向する貫通部を有し、かつ前記半導体素子に対して導電性接合材を介して接合されたバスバーと、
一部が前記貫通部を貫通し、かつ上面が前記バスバーの上面より上側に位置する状態で、前記バスバーに一部が接触するとともに前記半導体素子に対して離間した状態で前記導電性接合材を介して接合された過熱抑制防止部材と
を有する半導体装置。 A semiconductor element;
A bus bar having a penetrating portion facing the upper surface electrode of the semiconductor element and bonded to the semiconductor element via a conductive bonding material;
In a state where a part passes through the penetration part and an upper surface is located above the upper surface of the bus bar, the conductive bonding material is partially in contact with the bus bar and separated from the semiconductor element. A semiconductor device having an overheat suppression preventing member joined thereto.
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