JP4881396B2 - 反射防止膜材料 - Google Patents

反射防止膜材料 Download PDF

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Publication number
JP4881396B2
JP4881396B2 JP2008555229A JP2008555229A JP4881396B2 JP 4881396 B2 JP4881396 B2 JP 4881396B2 JP 2008555229 A JP2008555229 A JP 2008555229A JP 2008555229 A JP2008555229 A JP 2008555229A JP 4881396 B2 JP4881396 B2 JP 4881396B2
Authority
JP
Japan
Prior art keywords
value
antireflection film
electronic device
solvent
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008555229A
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English (en)
Japanese (ja)
Other versions
JP2009527021A (ja
JP2009527021A5 (enExample
Inventor
フゥ、プオン−フェイ
モイヤー、エリック・スコット
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Dow Silicones Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp, Dow Silicones Corp filed Critical Dow Corning Corp
Publication of JP2009527021A publication Critical patent/JP2009527021A/ja
Publication of JP2009527021A5 publication Critical patent/JP2009527021A5/ja
Application granted granted Critical
Publication of JP4881396B2 publication Critical patent/JP4881396B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/02—Polysilicates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Formation Of Insulating Films (AREA)
JP2008555229A 2006-02-13 2006-12-07 反射防止膜材料 Expired - Fee Related JP4881396B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US77261906P 2006-02-13 2006-02-13
US60/772,619 2006-02-13
PCT/US2006/046810 WO2007094848A2 (en) 2006-02-13 2006-12-07 Antireflective coating material

Publications (3)

Publication Number Publication Date
JP2009527021A JP2009527021A (ja) 2009-07-23
JP2009527021A5 JP2009527021A5 (enExample) 2011-06-23
JP4881396B2 true JP4881396B2 (ja) 2012-02-22

Family

ID=38371944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008555229A Expired - Fee Related JP4881396B2 (ja) 2006-02-13 2006-12-07 反射防止膜材料

Country Status (7)

Country Link
US (1) US8263312B2 (enExample)
EP (1) EP1989593A2 (enExample)
JP (1) JP4881396B2 (enExample)
KR (1) KR101324052B1 (enExample)
CN (1) CN101371196B (enExample)
TW (1) TWI406099B (enExample)
WO (1) WO2007094848A2 (enExample)

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JP4945460B2 (ja) * 2008-01-04 2012-06-06 株式会社東芝 反射防止構造の形成方法および反射防止構造
CN101910255B (zh) * 2008-01-08 2013-07-10 道康宁东丽株式会社 倍半硅氧烷树脂
US9023433B2 (en) * 2008-01-15 2015-05-05 Dow Corning Corporation Silsesquioxane resins and method of using them to form an antireflective coating
JP5581225B2 (ja) * 2008-03-04 2014-08-27 ダウ・コーニング・コーポレイション シルセスキオキサン樹脂
CN101970540B (zh) * 2008-03-05 2014-07-23 陶氏康宁公司 倍半硅氧烷树脂
US8293354B2 (en) * 2008-04-09 2012-10-23 The Regents Of The University Of Michigan UV curable silsesquioxane resins for nanoprint lithography
WO2010068336A1 (en) 2008-12-10 2010-06-17 Dow Corning Corporation Silsesquioxane resins
US20110236835A1 (en) * 2008-12-10 2011-09-29 Peng-Fei Fu Silsesquioxane Resins
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US9376593B2 (en) * 2009-04-30 2016-06-28 Enki Technology, Inc. Multi-layer coatings
US9353268B2 (en) 2009-04-30 2016-05-31 Enki Technology, Inc. Anti-reflective and anti-soiling coatings for self-cleaning properties
JPWO2011155582A1 (ja) * 2010-06-11 2013-08-15 株式会社日立ハイテクノロジーズ 微細構造転写用スタンパ及び微細構造転写装置
EP2588287A4 (en) * 2010-07-01 2018-01-17 Inmold Biosystems A/S Method and apparatus for producing a nanostructured or smooth polymer article
US9598586B2 (en) 2014-07-14 2017-03-21 Enki Technology, Inc. Coating materials and methods for enhanced reliability
US9399720B2 (en) 2014-07-14 2016-07-26 Enki Technology, Inc. High gain durable anti-reflective coating
TWI592760B (zh) * 2014-12-30 2017-07-21 羅門哈斯電子材料韓國有限公司 與經外塗佈之光致抗蝕劑一起使用之塗層組合物
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Also Published As

Publication number Publication date
WO2007094848A2 (en) 2007-08-23
CN101371196B (zh) 2012-07-04
WO2007094848A3 (en) 2007-12-06
TW200739270A (en) 2007-10-16
KR101324052B1 (ko) 2013-11-01
CN101371196A (zh) 2009-02-18
KR20080094686A (ko) 2008-10-23
US8263312B2 (en) 2012-09-11
TWI406099B (zh) 2013-08-21
EP1989593A2 (en) 2008-11-12
JP2009527021A (ja) 2009-07-23
US20080318436A1 (en) 2008-12-25

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