JP4877095B2 - 電流センサおよびその製造方法 - Google Patents

電流センサおよびその製造方法 Download PDF

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Publication number
JP4877095B2
JP4877095B2 JP2007166576A JP2007166576A JP4877095B2 JP 4877095 B2 JP4877095 B2 JP 4877095B2 JP 2007166576 A JP2007166576 A JP 2007166576A JP 2007166576 A JP2007166576 A JP 2007166576A JP 4877095 B2 JP4877095 B2 JP 4877095B2
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Japan
Prior art keywords
magnetic field
magnetoresistive
elements
current sensor
layer
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JP2007166576A
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English (en)
Japanese (ja)
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JP2009002911A (ja
JP2009002911A5 (https=
Inventor
茂 庄司
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TDK Corp
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TDK Corp
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Priority to JP2007166576A priority Critical patent/JP4877095B2/ja
Priority to US12/213,352 priority patent/US7646196B2/en
Publication of JP2009002911A publication Critical patent/JP2009002911A/ja
Publication of JP2009002911A5 publication Critical patent/JP2009002911A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0033—Printed inductances with the coil helically wound around a magnetic core

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
JP2007166576A 2007-06-25 2007-06-25 電流センサおよびその製造方法 Active JP4877095B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007166576A JP4877095B2 (ja) 2007-06-25 2007-06-25 電流センサおよびその製造方法
US12/213,352 US7646196B2 (en) 2007-06-25 2008-06-18 Current sensor and method of manufacturing current sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007166576A JP4877095B2 (ja) 2007-06-25 2007-06-25 電流センサおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2009002911A JP2009002911A (ja) 2009-01-08
JP2009002911A5 JP2009002911A5 (https=) 2010-03-11
JP4877095B2 true JP4877095B2 (ja) 2012-02-15

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Family Applications (1)

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JP2007166576A Active JP4877095B2 (ja) 2007-06-25 2007-06-25 電流センサおよびその製造方法

Country Status (2)

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US (1) US7646196B2 (https=)
JP (1) JP4877095B2 (https=)

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JP4361077B2 (ja) * 2006-10-31 2009-11-11 Ｔｄｋ株式会社 磁気センサおよびその製造方法
FR2941534B1 (fr) * 2009-01-26 2011-12-23 Commissariat Energie Atomique Capteur de champ magnetique a jauge de contrainte suspendue
WO2010143718A1 (ja) * 2009-06-12 2010-12-16 アルプス・グリーンデバイス株式会社 磁気平衡式電流センサ
EP2442117B1 (en) * 2009-06-12 2021-11-17 Alps Alpine Co., Ltd. Magnetic balance current sensor
JP5248421B2 (ja) 2009-06-22 2013-07-31 ブラザー工業株式会社 液体吐出装置
WO2011013412A1 (ja) 2009-07-27 2011-02-03 富士電機ホールディングス株式会社 非接触電流センサ
US9086444B2 (en) * 2009-12-28 2015-07-21 Tdk Corporation Magnetic field detection device and current sensor
JP5012939B2 (ja) * 2010-03-18 2012-08-29 Ｔｄｋ株式会社 電流センサ
US8975889B2 (en) * 2011-01-24 2015-03-10 Infineon Technologies Ag Current difference sensors, systems and methods
FR2979790B1 (fr) * 2011-09-07 2013-10-11 Commissariat Energie Atomique Capteur de courant
WO2013129276A1 (ja) * 2012-03-02 2013-09-06 Tdk株式会社 磁気センサ素子
US9817078B2 (en) 2012-05-10 2017-11-14 Allegro Microsystems Llc Methods and apparatus for magnetic sensor having integrated coil
US9372242B2 (en) * 2012-05-11 2016-06-21 Memsic, Inc. Magnetometer with angled set/reset coil
US10145908B2 (en) 2013-07-19 2018-12-04 Allegro Microsystems, Llc Method and apparatus for magnetic sensor producing a changing magnetic field
US10495699B2 (en) 2013-07-19 2019-12-03 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
US9823092B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor providing a movement detector
JP6763887B2 (ja) 2015-06-05 2020-09-30 アレグロ・マイクロシステムズ・エルエルシー 磁界に対する応答が改善されたスピンバルブ磁気抵抗効果素子
US10012518B2 (en) 2016-06-08 2018-07-03 Allegro Microsystems, Llc Magnetic field sensor for sensing a proximity of an object
KR101891414B1 (ko) * 2016-12-23 2018-08-23 전자부품연구원 센서의 외란 및 옵셋을 동시 보정할 수 있는 측정 방법 및 장치
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US10996289B2 (en) 2017-05-26 2021-05-04 Allegro Microsystems, Llc Coil actuated position sensor with reflected magnetic field
US10837943B2 (en) 2017-05-26 2020-11-17 Allegro Microsystems, Llc Magnetic field sensor with error calculation
US11428755B2 (en) 2017-05-26 2022-08-30 Allegro Microsystems, Llc Coil actuated sensor with sensitivity detection
JP6471779B2 (ja) * 2017-07-24 2019-02-20 Tdk株式会社 送受信装置
JP7020176B2 (ja) * 2018-02-27 2022-02-16 Tdk株式会社 磁気センサ
JP6597820B2 (ja) * 2018-03-12 2019-10-30 Ｔｄｋ株式会社 磁気センサおよび位置検出装置
US10823586B2 (en) 2018-12-26 2020-11-03 Allegro Microsystems, Llc Magnetic field sensor having unequally spaced magnetic field sensing elements
US11237020B2 (en) 2019-11-14 2022-02-01 Allegro Microsystems, Llc Magnetic field sensor having two rows of magnetic field sensing elements for measuring an angle of rotation of a magnet
US11280637B2 (en) 2019-11-14 2022-03-22 Allegro Microsystems, Llc High performance magnetic angle sensor
US11372029B2 (en) * 2019-12-11 2022-06-28 Tdk Corporation Magnetic field detection apparatus and current detection apparatus
US11262422B2 (en) 2020-05-08 2022-03-01 Allegro Microsystems, Llc Stray-field-immune coil-activated position sensor
US11493361B2 (en) 2021-02-26 2022-11-08 Allegro Microsystems, Llc Stray field immune coil-activated sensor
US20240369600A1 (en) * 2021-08-20 2024-11-07 Suzhou Littelfuse Ovs Co., Ltd. Battery system and hybrid current sensor therefor
US11578997B1 (en) 2021-08-24 2023-02-14 Allegro Microsystems, Llc Angle sensor using eddy currents
KR20230079985A (ko) * 2021-11-29 2023-06-07 한국전자기술연구원 자기 결합형 자가 진단 장치
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression
US12320870B2 (en) 2022-07-19 2025-06-03 Allegro Microsystems, Llc Controlling out-of-plane anisotropy in an MR sensor with free layer dusting
US12359904B2 (en) 2023-01-26 2025-07-15 Allegro Microsystems, Llc Method of manufacturing angle sensors including magnetoresistance elements including different types of antiferromagnetic materials
US12352832B2 (en) 2023-01-30 2025-07-08 Allegro Microsystems, Llc Reducing angle error in angle sensor due to orthogonality drift over magnetic-field
US12523717B2 (en) 2024-02-15 2026-01-13 Allegro Microsystems, Llc Closed loop magnetic field sensor with current control
CN119626738A (zh) * 2024-11-14 2025-03-14 西安交通大学 贴片阻尼电阻式宽频自积分罗氏线圈电流互感器及方法

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US5561368A (en) * 1994-11-04 1996-10-01 International Business Machines Corporation Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate
US6064552A (en) * 1997-03-18 2000-05-16 Kabushiki Kaisha Toshiba Magnetoresistive head having magnetic yoke and giant magnetoresistive element such that a first electrode is formed on the giant magnetoresistive element which in turn is formed on the magnetic yoke which acts as a second electrode
JP4028971B2 (ja) * 2001-08-28 2008-01-09 アルプス電気株式会社 磁気センサの組立方法
JP4433820B2 (ja) * 2004-02-20 2010-03-17 Ｔｄｋ株式会社 磁気検出素子およびその形成方法ならびに磁気センサ、電流計
JP4360998B2 (ja) * 2004-10-01 2009-11-11 Ｔｄｋ株式会社 電流センサ
JP4298691B2 (ja) * 2005-09-30 2009-07-22 Ｔｄｋ株式会社 電流センサおよびその製造方法
JP4361077B2 (ja) * 2006-10-31 2009-11-11 Ｔｄｋ株式会社 磁気センサおよびその製造方法

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Publication number Publication date
US7646196B2 (en) 2010-01-12
JP2009002911A (ja) 2009-01-08
US20080316655A1 (en) 2008-12-25

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