JP4863124B2 - 発光ダイオードモジュール及びその製造方法 - Google Patents
発光ダイオードモジュール及びその製造方法 Download PDFInfo
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- JP4863124B2 JP4863124B2 JP2007159256A JP2007159256A JP4863124B2 JP 4863124 B2 JP4863124 B2 JP 4863124B2 JP 2007159256 A JP2007159256 A JP 2007159256A JP 2007159256 A JP2007159256 A JP 2007159256A JP 4863124 B2 JP4863124 B2 JP 4863124B2
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- emitting diode
- light emitting
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000007789 sealing Methods 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 25
- 229920003023 plastic Polymers 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
Claims (4)
- 基板上に所定間隔で複数の発光ダイオード封止構造を配置する工程であって、前記発光ダイオード封止構造の各々は、封止支持ベースと、前記封止支持ベースの凹部の底に配置された発光ダイオードと、前記発光ダイオードを覆い前記封止支持ベースの凹部を取り囲む壁部の上面より高く前記封止支持ベースの凹部に充填された透明プラスチック材と、を有しており、隣りあう封止支持ベースの間に前記所定間隔の隙間が形成される、工程と、
前記発光ダイオード封止構造の上に、複数のレンズと前記発光ダイオード封止構造に対向した面に設けられた複数の凸点とを有するレンズ層板を接合し、前記レンズの各々を前記発光ダイオード封止構造の各々の発光ダイオード上に対応させて配置する工程であって、前記封止支持ベースの凹部に充填された透明プラスチック材は前記封止支持ベースの前記上面と前記レンズ層板との界面にオーバーフローされ、前記複数の凸点の各々は前記封止支持ベースの凹部を取り囲む壁部の前記上面に接触する工程と、
前記形成された隙間の位置で前記レンズ層板及び前記基板の切断を行い、複数の発光ダイオードモジュールを形成する工程と、
を含む発光ダイオードモジュールの製造方法。 - 前記発光ダイオード封止構造を配置する工程は、
前記封止支持ベースの凹部の底に前記発光ダイオードを配置する工程と、
前記封止支持ベースの凹部に前記透明プラスチック材を充填することにより、前記発光ダイオードを覆う工程と、
を含む請求項1記載の発光ダイオードモジュールの製造方法。 - 前記レンズ層板を接合した後に、前記透明プラスチック材を固化し、前記透明プラスチック材と前記レンズ層板とを接着させる工程をさらに含む請求項2記載の発光ダイオードモジュールの製造方法。
- 発光ダイオード封止構造及びレンズを備える発光ダイオードモジュールであって、
前記発光ダイオード封止構造は、基板上に配置され、封止支持ベースと、該封止支持ベースの凹部の底に配置された発光ダイオードと、該発光ダイオードを覆い前記封止支持ベースの凹部を取り囲む壁部の上面より高く前記封止支持ベースの凹部に充填された透明プラスチック材と、を有し、
前記レンズは、前記透明プラスチック材の表面に接着され、前記発光ダイオード封止構造に対向した面に複数の凸点を有しており、前記透明プラスチック材は前記封止支持ベースの上面と前記対向した面との界面にオーバーフローされており、前記複数の凸点の各々は前記封止支持ベースの凹部を取り囲む壁部の前記上面に接触していることを特徴とする発光ダイオードモジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096117895A TWI351115B (en) | 2007-05-18 | 2007-05-18 | Light-emitting diode module and the manufacturing method thereof |
TW096117895 | 2007-05-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008288540A JP2008288540A (ja) | 2008-11-27 |
JP4863124B2 true JP4863124B2 (ja) | 2012-01-25 |
Family
ID=40026602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007159256A Expired - Fee Related JP4863124B2 (ja) | 2007-05-18 | 2007-06-15 | 発光ダイオードモジュール及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8110842B2 (ja) |
JP (1) | JP4863124B2 (ja) |
TW (1) | TWI351115B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI351115B (en) | 2007-05-18 | 2011-10-21 | Everlight Electronics Co Ltd | Light-emitting diode module and the manufacturing method thereof |
US8455888B2 (en) | 2010-05-20 | 2013-06-04 | Industrial Technology Research Institute | Light emitting diode module, and light emitting diode lamp |
US8232574B2 (en) | 2010-10-28 | 2012-07-31 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting package with a mechanical latch |
JP5563440B2 (ja) * | 2010-12-24 | 2014-07-30 | 株式会社朝日ラバー | 樹脂レンズ、レンズ付led装置及びレンズ付led装置の製造方法 |
US9029887B2 (en) | 2011-04-22 | 2015-05-12 | Micron Technology, Inc. | Solid state lighting devices having improved color uniformity and associated methods |
KR20120131955A (ko) | 2011-05-27 | 2012-12-05 | 삼성전자주식회사 | 발광장치 |
CN105276382A (zh) * | 2015-08-17 | 2016-01-27 | 苏州艾莱科光电科技有限公司 | 一种双合透镜中功率led模组及系统 |
JP6668022B2 (ja) * | 2015-09-17 | 2020-03-18 | 日機装株式会社 | 発光モジュールおよび発光モジュールの製造方法 |
US11408589B2 (en) * | 2019-12-05 | 2022-08-09 | Optiz, Inc. | Monolithic multi-focus light source device |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56135984A (en) * | 1980-03-27 | 1981-10-23 | Matsushita Electric Ind Co Ltd | Manufacture of leadless light emitting diode chip |
JP3153711B2 (ja) | 1994-07-27 | 2001-04-09 | シャープ株式会社 | アップダウンチューナ |
TW408497B (en) * | 1997-11-25 | 2000-10-11 | Matsushita Electric Works Ltd | LED illuminating apparatus |
JP2000208822A (ja) * | 1999-01-11 | 2000-07-28 | Matsushita Electronics Industry Corp | 半導体発光装置 |
JP3349111B2 (ja) * | 1999-03-15 | 2002-11-20 | 株式会社シチズン電子 | 表面実装型発光ダイオード及びその製造方法 |
JP2002324917A (ja) | 2001-04-26 | 2002-11-08 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
JP2003008065A (ja) | 2001-06-21 | 2003-01-10 | Citizen Electronics Co Ltd | Smd型光素子モジュールの製造方法 |
TW567619B (en) * | 2001-08-09 | 2003-12-21 | Matsushita Electric Ind Co Ltd | LED lighting apparatus and card-type LED light source |
CN1241253C (zh) | 2002-06-24 | 2006-02-08 | 丰田合成株式会社 | 半导体元件的制造方法 |
TW563263B (en) | 2002-09-27 | 2003-11-21 | United Epitaxy Co Ltd | Surface mounting method for high power light emitting diode |
CN101740560B (zh) * | 2003-04-01 | 2012-11-21 | 夏普株式会社 | 发光装置、背侧光照射装置、显示装置 |
JP3963460B2 (ja) * | 2003-10-08 | 2007-08-22 | スタンレー電気株式会社 | Ledランプ用パッケージおよび該ledランプ用パッケージを具備するledランプ |
JP5128047B2 (ja) * | 2004-10-07 | 2013-01-23 | Towa株式会社 | 光デバイス及び光デバイスの生産方法 |
KR101197046B1 (ko) * | 2005-01-26 | 2012-11-06 | 삼성디스플레이 주식회사 | 발광다이오드를 사용하는 2차원 광원 및 이를 이용한 액정표시 장치 |
KR100662844B1 (ko) | 2005-06-10 | 2007-01-02 | 삼성전자주식회사 | Led 패키지 및 그 제조방법과 이를 이용한 led어레이 모듈 |
JP4945106B2 (ja) * | 2005-09-08 | 2012-06-06 | スタンレー電気株式会社 | 半導体発光装置 |
JP2007159256A (ja) | 2005-12-05 | 2007-06-21 | Toshiba Corp | 回転電機 |
TWI351115B (en) | 2007-05-18 | 2011-10-21 | Everlight Electronics Co Ltd | Light-emitting diode module and the manufacturing method thereof |
-
2007
- 2007-05-18 TW TW096117895A patent/TWI351115B/zh not_active IP Right Cessation
- 2007-06-15 JP JP2007159256A patent/JP4863124B2/ja not_active Expired - Fee Related
- 2007-07-12 US US11/827,475 patent/US8110842B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI351115B (en) | 2011-10-21 |
TW200847465A (en) | 2008-12-01 |
US8110842B2 (en) | 2012-02-07 |
US20080283856A1 (en) | 2008-11-20 |
JP2008288540A (ja) | 2008-11-27 |
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