JP4855757B2 - カーボンナノチューブパッド及び電子デバイス - Google Patents

カーボンナノチューブパッド及び電子デバイス Download PDF

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Publication number
JP4855757B2
JP4855757B2 JP2005303944A JP2005303944A JP4855757B2 JP 4855757 B2 JP4855757 B2 JP 4855757B2 JP 2005303944 A JP2005303944 A JP 2005303944A JP 2005303944 A JP2005303944 A JP 2005303944A JP 4855757 B2 JP4855757 B2 JP 4855757B2
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Japan
Prior art keywords
carbon nanotube
pad
layer
probe
film
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Expired - Fee Related
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JP2005303944A
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English (en)
Japanese (ja)
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JP2007115798A (ja
JP2007115798A5 (enExample
Inventor
孝浩 木村
友二 中村
祐二 粟野
瑞久 二瓶
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Fujitsu Ltd
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Fujitsu Ltd
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Priority to JP2005303944A priority Critical patent/JP4855757B2/ja
Publication of JP2007115798A publication Critical patent/JP2007115798A/ja
Publication of JP2007115798A5 publication Critical patent/JP2007115798A5/ja
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Publication of JP4855757B2 publication Critical patent/JP4855757B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2005303944A 2005-10-19 2005-10-19 カーボンナノチューブパッド及び電子デバイス Expired - Fee Related JP4855757B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005303944A JP4855757B2 (ja) 2005-10-19 2005-10-19 カーボンナノチューブパッド及び電子デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005303944A JP4855757B2 (ja) 2005-10-19 2005-10-19 カーボンナノチューブパッド及び電子デバイス

Publications (3)

Publication Number Publication Date
JP2007115798A JP2007115798A (ja) 2007-05-10
JP2007115798A5 JP2007115798A5 (enExample) 2008-09-11
JP4855757B2 true JP4855757B2 (ja) 2012-01-18

Family

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Family Applications (1)

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JP2005303944A Expired - Fee Related JP4855757B2 (ja) 2005-10-19 2005-10-19 カーボンナノチューブパッド及び電子デバイス

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JP (1) JP4855757B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7713858B2 (en) * 2006-03-31 2010-05-11 Intel Corporation Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same
JP4635030B2 (ja) * 2007-07-30 2011-02-16 株式会社東芝 構造体、電子装置及び構造体の形成方法
JP4896840B2 (ja) * 2007-09-03 2012-03-14 Ｓｍｋ株式会社 微細コネクタコンタクトの製造方法
EP2197782B1 (en) * 2007-09-12 2020-03-04 Smoltek AB Connecting and bonding adjacent layers with nanostructures
US8350160B2 (en) 2008-08-25 2013-01-08 Kabushiki Kaisha Toshiba Structure, electronic device, and method for fabricating a structure
JP5649494B2 (ja) * 2011-03-24 2015-01-07 株式会社東芝 半導体基板、その製造方法、および電子装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002082130A (ja) * 2000-09-06 2002-03-22 Hitachi Ltd 半導体素子検査装置及びその製造方法
JP4212258B2 (ja) * 2001-05-02 2009-01-21 富士通株式会社 集積回路装置及び集積回路装置製造方法
JP3948377B2 (ja) * 2002-09-12 2007-07-25 株式会社豊田中央研究所 圧接型半導体装置
US7518247B2 (en) * 2002-11-29 2009-04-14 Nec Corporation Semiconductor device and its manufacturing method
JP4689218B2 (ja) * 2003-09-12 2011-05-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4723195B2 (ja) * 2004-03-05 2011-07-13 株式会社オクテック プローブの製造方法
JP2005272271A (ja) * 2004-03-26 2005-10-06 Nippon Telegr & Teleph Corp <Ntt> カーボンナノチューブの製造方法及び半導体装置の製造方法

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Publication number Publication date
JP2007115798A (ja) 2007-05-10

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