JP4854469B2 - Electronic component storage package, electronic device, and electronic device mounted device - Google Patents

Electronic component storage package, electronic device, and electronic device mounted device Download PDF

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JP4854469B2
JP4854469B2 JP2006291101A JP2006291101A JP4854469B2 JP 4854469 B2 JP4854469 B2 JP 4854469B2 JP 2006291101 A JP2006291101 A JP 2006291101A JP 2006291101 A JP2006291101 A JP 2006291101A JP 4854469 B2 JP4854469 B2 JP 4854469B2
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hole
electronic component
base
electronic device
recess
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JP2008108954A (en
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善友 鬼塚
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Kyocera Corp
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Description

本発明は、圧電振動子や半導体素子等の電子部品を絶縁基体にそれぞれ収納する電子部品収納用パッケージ、電子装置および電子装置搭載機器に関するものである。   The present invention relates to an electronic component storage package for storing electronic components such as piezoelectric vibrators and semiconductor elements in an insulating base, an electronic device, and an electronic device mounting device.

従来より、水晶等の圧電振動子や半導体素子等の電子部品を収容するために電子部品収納用パッケージが用いられている。   2. Description of the Related Art Conventionally, electronic component storage packages have been used to store electronic components such as piezoelectric vibrators such as quartz and semiconductor elements.

図2(a)は従来の電子部品収納用パッケージの平面図、図2(b)は下面図、図2(c)は図2(a)のY−Y´線における断面図である。このような電子部品収納用パッケージは、配線基体201を含んで構成され、配線基体201は、平板状の基部202と、基部202の上面に配置され、且つ上部に蓋体211の蓋体搭載領域214を有する枠状部203とを備え、基部202及び枠状部203により電子部品(半導体素子207や圧電振動子208)を収納する凹部204が形成されている。   2A is a plan view of a conventional electronic component storage package, FIG. 2B is a bottom view, and FIG. 2C is a cross-sectional view taken along line YY ′ of FIG. Such an electronic component storage package includes a wiring base 201, which is arranged on a flat base 202 and an upper surface of the base 202, and a lid mounting area of the lid 211 on the top. The base portion 202 and the frame-shaped portion 203 form a concave portion 204 that houses an electronic component (semiconductor element 207 or piezoelectric vibrator 208).

また、枠状部203は、凹部204側の少なくとも一辺に段差部205を備え、この上面には電子部品(半導体素子207や圧電振動子208)を接続する複数の電極パッド206が形成されている。さらに、基部202には、その上面から下面まで到達する貫通孔209が形成されている。このような貫通孔209は、凹部204内に収納された圧電振動子208、および半導体素子207を真空状態に置くために、凹部204内からガスを排出するための排出口として用いられる。そして、ガスの排出後は、貫通孔209を充填材212で塞ぐことが行われている。   Further, the frame-like portion 203 includes a step portion 205 on at least one side on the concave portion 204 side, and a plurality of electrode pads 206 for connecting electronic components (semiconductor element 207 and piezoelectric vibrator 208) are formed on the upper surface. . Furthermore, a through hole 209 that reaches from the upper surface to the lower surface is formed in the base 202. Such a through hole 209 is used as a discharge port for discharging gas from the recess 204 in order to place the piezoelectric vibrator 208 and the semiconductor element 207 housed in the recess 204 in a vacuum state. Then, after the gas is discharged, the through hole 209 is closed with the filler 212.

このため、貫通孔209は、上面側の開口の径よりも、下面側の開口の径を大きくなしてある。これによって貫通孔209を塞ぐ充填材212が凹部204内に必要以上に入り込むことなく貫通孔209内に保持される。なお、図面の例では、基部202を構成する2層の積層体において、上層の貫通孔209の径を下層の貫通孔209の径よりも小さく成し、これら貫通孔209同士の位置を合せることにより連通する1つの貫通孔209としている。
特開2004−120073号公報
For this reason, the through-hole 209 has a diameter of the opening on the lower surface side larger than the diameter of the opening on the upper surface side. Accordingly, the filler 212 that closes the through hole 209 is held in the through hole 209 without entering the recess 204 more than necessary. In the example of the drawing, in the two-layer laminate constituting the base portion 202, the diameter of the upper through hole 209 is made smaller than the diameter of the lower through hole 209, and the positions of the through holes 209 are aligned. One through hole 209 communicating with each other is formed.
JP 2004-120073 A

しかしながら、上記の電子部品収納用パッケージにおいて、基部の上面側の開口の径よりも、基部の下面側の開口の径を大きくなした貫通孔を形成するためには、基部に或る程度以上の厚みが必要である。特に上述の例のごとく、上層の貫通孔の径を下層の貫通孔の径よりも小さく成すには、基部を形成する絶縁層を2層構造とする必要があることから電子部品収納用パッケージの薄型化が困難であった。   However, in the electronic component storage package described above, in order to form a through hole in which the diameter of the opening on the lower surface side of the base portion is larger than the diameter of the opening on the upper surface side of the base portion, a certain amount or more is formed in the base portion. Thickness is necessary. In particular, as described above, in order to make the diameter of the upper through hole smaller than the diameter of the lower through hole, the insulating layer forming the base must have a two-layer structure. Thinning was difficult.

本発明は、かかる懸念に鑑み案出されたものであり、その目的は、貫通孔を有する電子部品収納用パッケージを薄型化することにある。   The present invention has been devised in view of such concerns, and an object thereof is to reduce the thickness of an electronic component storage package having a through hole.

本発明の電子部品収納用パッケージは、平板状の基部と、該基部の上面に配置され、且つ上部に蓋体搭載領域を有する枠状部とを備え、前記基部及び枠状部により電子部品を収納する凹部が形成されてなる電子部品収容用パッケージであって、前記枠状部は、凹部側の少なくとも一辺に段差部を備え、該段差部及び基部には、前記段差部の上面から前記基部の下面まで到達する貫通孔が形成されていると共に、該貫通孔は、前記段差部における開口の径よりも、前記基部における開口の径が大きく成してあり、前記基部は、該基部の下面側における前記貫通孔の開口から前記基部の外周端にかけて通じる溝を備えることを特徴とする。
The electronic component storage package of the present invention includes a flat base portion and a frame-like portion disposed on the upper surface of the base portion and having a lid mounting area on the upper portion, and the electronic component is placed by the base portion and the frame-like portion. An electronic component housing package in which a recessed portion to be housed is formed, wherein the frame-shaped portion includes a step portion on at least one side on the recessed portion side, and the base portion is provided on the step portion and the base portion from the upper surface of the step portion. the lower surface a through-hole reaching is formed to, through-hole, rather than the diameter of the opening in the step portion, Ri Oh forms diameter of the aperture is greater in the base, the base, the base portion provided with a groove leading from the opening of the through hole at the lower surface side to the outer peripheral edge of said base portion and said Rukoto.

また、本発明の電子部品収納用パッケージは、好ましくは、前記貫通孔の前記段差部側の開口は、該段差部上面に形成された電極パッド上に位置することを特徴とする。   In the electronic component storage package according to the present invention, preferably, the opening on the stepped portion side of the through hole is located on an electrode pad formed on an upper surface of the stepped portion.

また、本発明の電子部品収納用パッケージは、好ましくは、前記貫通孔は貫通導体を兼ねると共に、該貫通導体は、グランド電位に保持される外部回路に電気的に接続されることを特徴とする。   In the electronic component storage package according to the present invention, preferably, the through hole also serves as a through conductor, and the through conductor is electrically connected to an external circuit held at a ground potential. .

本発明の電子装置は、上述の電子部品収納用パッケージと、前記凹部に収納される電子部品と、前記枠状部の蓋体搭載領域に搭載される蓋体と、前記貫通孔を塞ぐ充填材と、を備えることを特徴とする。   The electronic device according to the present invention includes the electronic component storage package described above, the electronic component stored in the recess, a lid mounted in the lid mounting region of the frame-shaped portion, and a filler that closes the through hole. And.

また、本発明の電子装置は、好ましくは、前記凹部に収納される前記電子部品が圧電振動子であり、前記貫通孔は、平面視で前記圧電振動子と重ならない位置に形成されていることを特徴とする。   In the electronic device of the present invention, preferably, the electronic component housed in the recess is a piezoelectric vibrator, and the through hole is formed at a position that does not overlap the piezoelectric vibrator in plan view. It is characterized by.

また、本発明の電子装置は、好ましくは、前記凹部に収納される前記電子部品が圧電振動子であり、前記段差部上面の貫通孔の開口が、前記圧電振動子の上面よりも低い位置にあることを特徴とする。   In the electronic device of the present invention, it is preferable that the electronic component housed in the recess is a piezoelectric vibrator, and the opening of the through hole in the upper surface of the stepped portion is positioned lower than the upper surface of the piezoelectric vibrator. It is characterized by being.

本発明の電子装置搭載機器は、上述の電子装置と、該電子装置の接続端子に接続される外部回路を有する外部配線基板と、前記接続端子と前記外部回路とを接続するロウ材とを備え、該ロウ材は、前記貫通孔を塞ぐ充填材よりも、融点が低いことを特徴とする。   An electronic device-equipped device according to the present invention includes the above-described electronic device, an external wiring board having an external circuit connected to the connection terminal of the electronic device, and a brazing material that connects the connection terminal and the external circuit. The brazing material has a lower melting point than the filler that closes the through hole.

本発明の電子部品収納用パッケージは、基部の上面に貫通孔の開口がある場合に比較して基部の厚みを薄くしたとしても、下面側の開口径と上面側の開口径との大きさに差をつけるのに十分な厚みを、基部及び枠状部の段差部により確保できる。   The electronic component storage package according to the present invention has a size of the opening diameter on the lower surface side and the opening diameter on the upper surface side even if the thickness of the base portion is reduced compared to the case where the opening of the through hole is formed on the upper surface of the base portion. A thickness sufficient to make a difference can be secured by the step portions of the base portion and the frame-like portion.

また、本発明の電子部品収納用パッケージは、電子部品収納用パッケージの凹部内の面積に対する複数の電極パッド、および貫通孔の占める面積の割合を低減することができる。   Moreover, the electronic component storage package of the present invention can reduce the ratio of the area occupied by the plurality of electrode pads and the through holes to the area in the recess of the electronic component storage package.

また、本発明の電子部品収納用パッケージは、貫通孔をグランド電位に接続するための貫通導体として用いることができる。   In addition, the electronic component storage package of the present invention can be used as a through conductor for connecting the through hole to the ground potential.

また、電子部品収納用パッケージの下面に形成された接続端子を外部回路にロウ材を介して接続する際に、溶融した半田等のロウ材から発生するガスを、溝を通して逃がすことができる。   Further, when the connection terminal formed on the lower surface of the electronic component storage package is connected to the external circuit via the brazing material, the gas generated from the brazing material such as molten solder can be released through the groove.

本発明の電子装置は、下面側の開口径が上面側の開口径よりも大きな貫通孔を電子装置全体の厚みを増すことなく形成できるとともに、小型・薄型であり信頼性の高い封止構造の電子装置を実現できる。   The electronic device of the present invention can form a through-hole having an opening diameter on the lower surface side larger than the opening diameter on the upper surface side without increasing the thickness of the entire electronic device, and has a small, thin and highly reliable sealing structure. An electronic device can be realized.

また、本発明の電子装置は、貫通孔を塞ぐための充填材が誤って凹部に収納される圧電振動子に付着して発振不良となることを抑制することができる。   In addition, the electronic device according to the present invention can prevent the filler for closing the through hole from being erroneously attached to the piezoelectric vibrator housed in the recess and causing oscillation failure.

さらに、本発明の電子装置は、貫通孔の開口上部に広い隙間を確保でき、電子部品を収納したあとに、この隙間を介して効率良く凹部内のガスを真空引きすることができる。   Furthermore, the electronic device according to the present invention can secure a wide gap above the opening of the through-hole, and can efficiently evacuate the gas in the recess through the gap after the electronic component is stored.

本発明の電子装置搭載機器は、電子装置を外部配線基板の外部回路に接続するときの熱処理により貫通孔を塞いだ充填材が溶融して封止不良になることを防止することができる。   The electronic device-equipped device of the present invention can prevent the sealing material from being melted due to the heat treatment when the electronic device is connected to the external circuit of the external wiring board, resulting in a poor sealing.

次に、本発明の電子部品収納用パッケージ、及び電子装置を添付の図面を基に説明する。図1(a)、(b)、(c)は本発明の電子部品収納用パッケージ及び電子装置の実施の形態の一例を示した平面図、下面図、および図1(a)のX−X´における断面図である。なお、図1(c)は、4枚の絶縁層が積層されて図1の電子部品収納用パッケージとなることをわかり易く示した断面透視図としている。   Next, an electronic component storage package and an electronic device according to the present invention will be described with reference to the accompanying drawings. 1A, 1B, and 1C are a plan view, a bottom view, and an XX in FIG. 1A showing an example of an embodiment of an electronic component storage package and an electronic device according to the present invention. It is sectional drawing in '. FIG. 1C is a cross-sectional perspective view that clearly shows that four insulating layers are stacked to form the electronic component storage package of FIG.

同図において、101は絶縁基体、102は基部、103は枠状部、104は凹部、105は段差部、106は電極パッド、109は貫通孔、110は接続端子である。そして、主として基部102と枠状部103から成る絶縁基体101と、電極パッド106、貫通孔109、接続端子110で構成されている。   In the figure, 101 is an insulating substrate, 102 is a base, 103 is a frame-shaped portion, 104 is a recess, 105 is a stepped portion, 106 is an electrode pad, 109 is a through hole, and 110 is a connection terminal. The insulating base 101 mainly includes a base 102 and a frame-like portion 103, an electrode pad 106, a through hole 109, and a connection terminal 110.

絶縁基体101は、酸化アルミニウム質焼結体(アルミナセラミックス)や窒化アルミニウム質焼結体、ムライト質焼結体、ガラスセラミックス等のセラミックスや樹脂から成り、例えば一辺の長さが3〜20mm程度で厚みが1〜5mm程度の直方体状である。   The insulating base 101 is made of a ceramic or a resin such as an aluminum oxide sintered body (alumina ceramic), an aluminum nitride sintered body, a mullite sintered body, or a glass ceramic, and has a side length of about 3 to 20 mm. It has a rectangular parallelepiped shape with a thickness of about 1 to 5 mm.

また、絶縁基体101は、中央部に凹部104を有しており、凹部104の深さは、収納する電子部品(この例では、半導体素子107、圧電振動子108)の配置の状態を考慮して、電子部品同士が干渉しないような深さで形成されている。 The insulating base 101 has a recess 104 at the center, and the depth of the recess 104 takes into account the state of arrangement of electronic components (in this example, the semiconductor element 107 and the piezoelectric vibrator 108) to be stored. Thus, the depth is such that the electronic components do not interfere with each other.

このような絶縁基体101は、酸化アルミニウム質焼結体から成る場合であれば、以下のようにして作製される。まず、酸化アルミニウム、酸化珪素、酸化マグネシウム、酸化カルシウム等の原料粉末に適当な有機バインダ、溶剤、可塑剤等を添加混合して泥漿状となし、これを従来周知のドクタブレード法やカレンダーロール法等によりシート状に成形し、複数枚のセラミックグリーンシートを得る。しかる後、セラミックグリーンシートに適当な打ち抜き加工を施して、平板状の基部102と、四角形の枠状部103とを形成・積層して絶縁基体101の基となる母基板を得る。具体的には、平板状の基部102の上面に、半導体素子107が収納される凹部104を形成するための打ち抜き加工により形成された枠状部103を積層しておき、さらに、その上面に圧電振動子108が収納される凹部104を形成するために、下側の枠状部103よりも開口面積の広い枠状部103を積層して、その積層体を高温(約1600℃)で焼成することにより作製される。このように下側の枠状部と上側の枠状部との開口部がずれるようになすことにより、枠状部103は、凹部104側の少なくとも一辺に少なくとも一段からなる段差部105を備えることとなる。   If such an insulating substrate 101 is made of an aluminum oxide sintered body, it is manufactured as follows. First, a suitable organic binder, solvent, plasticizer, etc. are added to and mixed with raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide to form a mud, which is conventionally known as a doctor blade method or calendar roll method. Etc. to form a plurality of ceramic green sheets. Thereafter, the ceramic green sheet is appropriately punched to form and laminate a flat base portion 102 and a square frame portion 103 to obtain a base substrate that is the base of the insulating base 101. Specifically, a frame-like portion 103 formed by punching to form the recess 104 in which the semiconductor element 107 is accommodated is laminated on the upper surface of the flat base portion 102, and further, a piezoelectric element is formed on the upper surface. In order to form the concave portion 104 in which the vibrator 108 is accommodated, the frame-like portion 103 having a larger opening area than the lower frame-like portion 103 is laminated, and the laminated body is fired at a high temperature (about 1600 ° C.). It is produced by this. As described above, the opening of the lower frame-shaped portion and the upper frame-shaped portion is shifted so that the frame-shaped portion 103 includes a stepped portion 105 having at least one step on at least one side on the concave portion 104 side. It becomes.

また、凹部104の上面や段差部105の上面には、半導体素子107や圧電振動子108の電極が接続される複数の電極パッド106が形成されている。これら電極パッド106は、図1(c)の例であれば、凹部104内に収納される半導体素子107と半導体素子107の上側に収納される圧電振動子108を電気的に接続するための導通路として機能する。   A plurality of electrode pads 106 to which the electrodes of the semiconductor element 107 and the piezoelectric vibrator 108 are connected are formed on the upper surface of the concave portion 104 and the upper surface of the stepped portion 105. In the example shown in FIG. 1C, these electrode pads 106 are conductors for electrically connecting the semiconductor element 107 housed in the recess 104 and the piezoelectric vibrator 108 housed above the semiconductor element 107. Functions as a passage.

また、凹部104の内面から絶縁基体101の下面や側面等の外面にかけて形成された配線導体は、半導体素子107や圧電振動子108に電気的に接続され、外部に導出されて外部電気回路に接続するための導電路として機能する。   In addition, the wiring conductor formed from the inner surface of the recess 104 to the outer surface such as the lower surface and the side surface of the insulating base 101 is electrically connected to the semiconductor element 107 and the piezoelectric vibrator 108 and is led out to be connected to an external electric circuit. It functions as a conductive path for this purpose.

この電子部品収納用パッケージにおいて、凹部104の底面に半導体素子107を搭載して、圧電振動子108搭載用の段差部105xの上面に形成された電極パッド106xに圧電振動子108を搭載し、凹部104の外周上面に形成される蓋体搭載領域114を蓋体111で塞いだ後に、半導体素子107、および圧電振動子108が収納された凹部104内を真空状態にするために、凹部104内から貫通孔109を介してガスを排出し、さらに貫通孔109を充填材112で塞ぐことにより、凹部104内に収納された半導体素子107、圧電振動子108が凹部104内に気密に封止される。   In this electronic component storage package, the semiconductor element 107 is mounted on the bottom surface of the recess 104, and the piezoelectric vibrator 108 is mounted on the electrode pad 106x formed on the upper surface of the step portion 105x for mounting the piezoelectric vibrator 108. After the lid mounting area 114 formed on the outer peripheral upper surface of the 104 is closed with the lid 111, the inside of the recess 104 is placed in a vacuum state in order to place the semiconductor element 107 and the recess 104 containing the piezoelectric vibrator 108 in a vacuum state. The semiconductor element 107 and the piezoelectric vibrator 108 housed in the recess 104 are hermetically sealed in the recess 104 by discharging the gas through the through hole 109 and closing the through hole 109 with the filler 112. .

半導体素子107は、例えば、演算素子やメモリを有するICチップ等であり、通常、その外形が略四角形を成す平板状であり、その上面側には電極(図示せず)が形成されている。この場合、半導体素子107の上面に電極が形成される場合は、例えばワイヤボンディング等により半導体素子107との接続のための電極パッド106y形成用の段差部105yの上面に形成された複数の接続パッド106に接続される。   The semiconductor element 107 is, for example, an IC chip or the like having an arithmetic element or a memory. The semiconductor element 107 is generally a flat plate whose outer shape is a substantially square shape, and an electrode (not shown) is formed on the upper surface side. In this case, when an electrode is formed on the upper surface of the semiconductor element 107, for example, a plurality of connection pads formed on the upper surface of the step portion 105y for forming the electrode pad 106y for connection to the semiconductor element 107 by wire bonding or the like. 106.

なお、上述した圧電振動子108搭載用の段差部105x、半導体素子107との接続のための電極パッド106y形成用の段差部105y以外にも、段差部を形成してもよく、またすべての段差部106には、他の目的の電極パッドが形成されてもよい。   In addition to the above-described step portion 105x for mounting the piezoelectric vibrator 108 and the step portion 105y for forming the electrode pad 106y for connection to the semiconductor element 107, step portions may be formed, or all steps The part 106 may be formed with an electrode pad for other purposes.

また、圧電振動子108は、例えば、水晶振動子や弾性表面波素子等であり、通常、その外形が四角形状の平板状であり、その端部には電極(図示せず)が形成されている。また、振動が妨げず正確に振動させるために、収納後の蓋体111の下面と圧電振動子108の下面との間、及び、半導体素子107の上面と圧電振動子108の下面との間は、20〜50μm程度の隙間を空けて凹部104内に搭載するとよい。   The piezoelectric vibrator 108 is, for example, a quartz crystal vibrator or a surface acoustic wave element. The outer shape of the piezoelectric vibrator 108 is usually a rectangular flat plate, and an electrode (not shown) is formed at the end thereof. Yes. Further, in order to vibrate accurately without hindering vibration, the space between the lower surface of the lid body 111 after storage and the lower surface of the piezoelectric vibrator 108 and between the upper surface of the semiconductor element 107 and the lower surface of the piezoelectric vibrator 108 are It is good to mount in the recessed part 104 with a clearance gap of about 20-50 micrometers.

そして、このような本発明の電子部品収納用パッケージにおいては、図1に示すように、
枠状部103が、凹部104側の少なくとも一辺に、半導体素子107との接続のための電極パッド106y形成用の段差部105yを備え、段差部105y及び基部102には、段差部105yの上面から基部102下面まで到達する貫通孔109が形成されている。そして貫通孔109は、段差部105yにおける開口の径よりも、基部102における開口の径が大きく成してあることを特徴とする。
And in such an electronic component storage package of the present invention, as shown in FIG.
The frame-like portion 103 is provided with a step portion 105y for forming an electrode pad 106y for connection to the semiconductor element 107 on at least one side on the concave portion 104 side, and the step portion 105y and the base portion 102 are provided from the upper surface of the step portion 105y. A through hole 109 reaching the lower surface of the base 102 is formed. The through hole 109 is characterized in that the diameter of the opening in the base 102 is larger than the diameter of the opening in the stepped portion 105y.

この構造により、基部102の上面、すなわち凹部104の底面に貫通孔109の開口がある場合に比較して基部102の厚みを薄くしたとしても、貫通孔109を塞ぐ充填材112を貫通孔109内に保持して凹部104内に必要以上に入り込むことのないように、下面側の開口径と上面側の開口径との大きさに差をつけるのに十分な厚みを、基部102及び枠状部103の段差部105yにより確保できる。従って、従来のように基部102を2層以上の絶縁層で構成して、貫通孔109を形成するために基部102の厚みを増しておく必要がない。   With this structure, even if the thickness of the base portion 102 is reduced compared to the case where the opening of the through hole 109 is formed on the upper surface of the base portion 102, that is, the bottom surface of the concave portion 104, the filler 112 that closes the through hole 109 The base 102 and the frame-shaped portion have a thickness sufficient to make a difference between the opening diameter on the lower surface side and the opening diameter on the upper surface side. This can be ensured by the 103 stepped portion 105y. Therefore, it is not necessary to increase the thickness of the base portion 102 in order to form the through hole 109 by forming the base portion 102 with two or more insulating layers as in the prior art.

なお、貫通孔109の下面側の開口径と上面側の開口径との差のつけ方及び充填材112の大きさを種々変更することにより、貫通孔109内の所望の高さに充填材112を保持できる。   Note that the filler 112 can be adjusted to a desired height in the through-hole 109 by variously changing the difference between the opening diameter on the lower surface side and the opening diameter on the upper surface side of the through-hole 109 and the size of the filler 112. Can be held.

例えば、貫通孔109の基部102における径が150μmであり、段差部105における径が100μmであれば、充填材112の径を120〜130μm程度とすることにより、充填材112を貫通孔109内に容易に挿入・位置決めすることができる。この場合、貫通孔109に充填材112を挿入するためは、半田ボール搭載機や振り込み治具等を用いて基部102の下面側から挿入すればよい。また、貫通孔109を下から上に漸次狭くするようにしてもよく、また段階的に狭くするようにしてもよい。   For example, if the diameter of the base portion 102 of the through hole 109 is 150 μm and the diameter of the stepped portion 105 is 100 μm, the filler material 112 is put into the through hole 109 by setting the diameter of the filler material 112 to about 120 to 130 μm. Can be easily inserted and positioned. In this case, in order to insert the filler 112 into the through-hole 109, it may be inserted from the lower surface side of the base 102 using a solder ball mounting machine, a transfer jig, or the like. Further, the through hole 109 may be gradually narrowed from the bottom to the top, or may be narrowed in stages.

そして、本発明に用いられる充填材112としては、例えば、後述するAu−Sn半田系またはPb−Sn半田系材料等が好適に使用される。   And as the filler 112 used for this invention, the Au-Sn solder type | system | group or Pb-Sn solder type | system | group material etc. which are mentioned later are used suitably, for example.

また、本発明の電子部品収納用パッケージにおいては、好ましくは、貫通孔109の段差部105側の開口は、段差部105上面に形成された電極パッド106上に位置することを特徴とする。   In the electronic component housing package of the present invention, preferably, the opening on the stepped portion 105 side of the through hole 109 is located on the electrode pad 106 formed on the upper surface of the stepped portion 105.

この構造により、電子部品収納用パッケージの凹部104内の面積に対する複数の電極パッド106、および貫通孔109の占める面積の割合を低減することができる。このような構造として、例えば、図1(a)に示したように、凹部104側の一辺に形成された段差部105の上面に半導体素子107の電極を接続するための複数の電極パッド106を形成しておき、このうち1つの電極パッド106y(この例では、右上の最も面積の広い半導体素子107接続用の電極パッド106y)に貫通孔109が露出するように形成すればよい。これにより、段差部105の上面に形成される電極パッド106と貫通孔109とを同一平面上で重なるように形成することが可能となり、凹部104内の面積に対する複数の電極パッド106、および貫通孔109の占める面積の割合を低減することができる。   With this structure, the ratio of the area occupied by the plurality of electrode pads 106 and the through holes 109 to the area in the recess 104 of the electronic component storage package can be reduced. As such a structure, for example, as shown in FIG. 1A, a plurality of electrode pads 106 for connecting the electrodes of the semiconductor element 107 to the upper surface of the stepped portion 105 formed on one side of the concave portion 104 are provided. One of the electrode pads 106y (in this example, the electrode pad 106y for connecting the semiconductor element 107 having the largest area in the upper right) may be formed so that the through hole 109 is exposed. As a result, the electrode pad 106 and the through hole 109 formed on the upper surface of the stepped portion 105 can be formed so as to overlap on the same plane, and the plurality of electrode pads 106 and the through holes with respect to the area in the recess 104 can be formed. The ratio of the area occupied by 109 can be reduced.

また、本発明の電子部品収納用パッケージにおいては、好ましくは、貫通孔109は貫通導体を兼ねると共に、貫通導体は、グランド電位に保持される外部回路に電気的に接続されることを特徴とする。   In the electronic component storage package according to the present invention, preferably, the through hole 109 also serves as a through conductor, and the through conductor is electrically connected to an external circuit held at a ground potential. .

この構造により、貫通孔109を凹部104内から絶縁基体101の外部に導出させる貫通導体として用いることができる。このような構造として、例えば図1(a)に示したように、凹部104側の一辺に形成された段差部105の上面に半導体素子107の電極を接続するための複数の電極パッド106yを形成しておき、このうち1つの電極パッド106y(この例では、右上の最も面積の広い半導体素子107接続用の電極パッド106y)に貫通孔109が露出するように形成しておき、貫通孔109の内側面をメタライズ層で覆っておき、段差部105の上面に形成されている電極パッド106yと絶縁基体101の下面に形成されている接続端子110とが電気的に導通するように形成すればよい。これにより、半導体素子107の電極から電極パッド106y、およびこの貫通孔109の内側面に形成されたメタライズ層を経由して、絶縁基体101の下面に形成される接続端子110がグランド電位として導通される。さらに、充填材112を導体により形成した場合は、この充填材112に電気的導通の一翼を担わせることが可能となり、電気抵抗の低減が可能となる。   With this structure, the through hole 109 can be used as a through conductor that leads out of the recess 104 to the outside of the insulating base 101. As such a structure, for example, as shown in FIG. 1A, a plurality of electrode pads 106y for connecting the electrodes of the semiconductor element 107 are formed on the upper surface of the step portion 105 formed on one side of the recess 104 side. One of the electrode pads 106 y (in this example, the electrode pad 106 y for connecting the semiconductor element 107 having the largest area in the upper right) is formed so that the through hole 109 is exposed. The inner surface may be covered with a metallized layer so that the electrode pad 106y formed on the upper surface of the stepped portion 105 and the connection terminal 110 formed on the lower surface of the insulating base 101 are electrically connected. . As a result, the connection terminal 110 formed on the lower surface of the insulating base 101 is made conductive as a ground potential from the electrode of the semiconductor element 107 through the electrode pad 106y and the metallized layer formed on the inner surface of the through hole 109. The Further, when the filler 112 is formed of a conductor, the filler 112 can bear one blade of electrical conduction, and the electrical resistance can be reduced.

また、本発明の電子部品収納用パッケージにおいては、好ましくは、基部102は、基部102の下面側における貫通孔109の開口から基部102の外周端にかけて通じる溝113を備えることを特徴とする。   In the electronic component storage package of the present invention, preferably, the base portion 102 is provided with a groove 113 communicating from the opening of the through hole 109 on the lower surface side of the base portion 102 to the outer peripheral end of the base portion 102.

この構造により、電子部品の下面に形成された接続端子110を外部回路にロウ材を介して接続する際に、加熱により溶融した半田等のロウ材から発生するガスを、溝113を通して逃がすことができる。ここで、貫通孔109を塞いでいる充填材112は、絶縁基体101の下面よりも奥側に保持されて貫通孔109の下側に空隙が形成される。リフローでの熱処理により半田等のロウ材が溶融して半田中のフラックスからガスが発生し、貫通孔109の空隙に溜まる場合があるが、貫通孔109の開口から基部102の外周端にかけて溝113が形成されていることから、このガスを外部に逃がすことができる。   With this structure, when the connection terminal 110 formed on the lower surface of the electronic component is connected to the external circuit via the brazing material, the gas generated from the brazing material such as solder melted by heating can be released through the groove 113. it can. Here, the filler 112 closing the through hole 109 is held deeper than the lower surface of the insulating base 101, and a gap is formed below the through hole 109. The brazing material such as solder is melted by heat treatment in reflow and gas is generated from the flux in the solder, and may accumulate in the gap of the through hole 109. However, the groove 113 extends from the opening of the through hole 109 to the outer peripheral end of the base 102. Since this is formed, this gas can be released to the outside.

また、溝113を形成する方法としては、基部102となる絶縁層(セラミックスからなる場合は、焼成前のもの)に、貫通孔109の開口から基部102の外周端にかけて通じて溝113が形成されるように、凸型のパンチを押し当てたり、カッター刃を挿入することにより形成することができる。溝113の幅は、溶融した半田等のロウ材から発生するガスを逃がすのに十分な幅、深さがあればよく、その幅は30〜100μm程度、さらにはその深さが20〜50μm程度がより好ましい。なお、焼成後にレーザーやウォータージェット法等により溝を形成してもよい。   In addition, as a method of forming the groove 113, the groove 113 is formed by passing from the opening of the through hole 109 to the outer peripheral end of the base portion 102 through the insulating layer to be the base portion 102 (in the case of ceramics, before firing). Thus, it can be formed by pressing a convex punch or inserting a cutter blade. The groove 113 only needs to have a width and a depth sufficient to allow gas generated from the solder material such as molten solder to escape. The width is about 30 to 100 μm, and further, the depth is about 20 to 50 μm. Is more preferable. In addition, you may form a groove | channel by laser, a water jet method, etc. after baking.

次に本発明の電子装置について説明する。本発明の電子装置は、上述の電子部品収納用パッケージと、凹部104に収納される電子部品(半導体素子107、圧電振動子108)と、枠状部103の蓋体搭載領域114に搭載される蓋体111と、貫通孔109を塞ぐ充填材112と、を備えている。   Next, the electronic device of the present invention will be described. The electronic device of the present invention is mounted on the electronic component storage package described above, the electronic components (semiconductor element 107 and piezoelectric vibrator 108) stored in the recess 104, and the lid mounting region 114 of the frame-shaped portion 103. A lid 111 and a filler 112 that closes the through hole 109 are provided.

この構造により、下面側の開口径が上面側の開口径よりも大きな貫通孔109を電子装置全体の厚みを増すことなく形成できるとともに、従来品に比べ小型・薄型であり信頼性の高い封止構造の電子装置を実現できる。このとき、圧電振動子108を支持固定するための導電性接着剤が完全に硬化してから蓋体111および充填材112により凹部104内を気密封止しなくとも、導電性接着剤から発生するガスを、貫通孔109を介して外部に排出して電子装置の長期信頼性をより確かなものとすることができる。   With this structure, the through hole 109 having an opening diameter on the lower surface side larger than the opening diameter on the upper surface side can be formed without increasing the thickness of the entire electronic device, and it is smaller, thinner and more reliable than conventional products. An electronic device having a structure can be realized. At this time, even if the conductive adhesive for supporting and fixing the piezoelectric vibrator 108 is completely cured and the inside of the recess 104 is not hermetically sealed by the lid 111 and the filler 112, the conductive adhesive is generated from the conductive adhesive. The gas can be discharged to the outside through the through-hole 109 to further ensure the long-term reliability of the electronic device.

このような電子部品収納用パッケージには、凹部104側の一辺に形成された段差部105の上面から絶縁基体101の裏面にかけて貫通孔109が設けてあり、半導体素子107や圧電振動子108が凹部104内に収納、接続される。   In such an electronic component storage package, a through hole 109 is provided from the upper surface of the stepped portion 105 formed on one side of the concave portion 104 to the back surface of the insulating base 101, and the semiconductor element 107 and the piezoelectric vibrator 108 are formed in the concave portion. It is housed and connected in 104.

蓋体111を凹部104上面の蓋体搭載領域114に取着するロウ材は、例えば銀ロウなどが使用可能であり、蓋体111の下面に一体的にロウ材が形成された板体を圧延したクラッドタイプのロウ材を、蓋体搭載領域114に位置決めしておき、一対のローラー電極により蓋体111の上面に大電流を流してシーム溶接を行うことにより、蓋体111が蓋体搭載領域114上に溶接される。   As the brazing material for attaching the lid 111 to the lid mounting area 114 on the upper surface of the recess 104, for example, silver brazing can be used, and a plate body in which the brazing material is integrally formed on the lower surface of the lid 111 is rolled. The clad type brazing material is positioned in the lid mounting area 114, and a large current is applied to the upper surface of the lid 111 by a pair of roller electrodes to perform seam welding, so that the lid 111 is in the lid mounting area. 114 is welded.

そして、蓋体111が搭載された後に、貫通孔109から凹部104内を真空状態にするために、真空容器を用いて電子装置の周囲を真空雰囲気中とし、貫通孔109から凹部104中のガスを真空引きする。その後に、貫通孔109内で充填材112を加熱して塞ぐことにより凹部104内を真空に封止することができる。ここで、充填材112としては、例えば、Au−Sn半田系またはPb−Sn半田系材料等で形成された球状の充填材112が使用可能である。この充填材112を図1(c)で示した貫通孔109内に載置して、密閉式の真空封止装置やレーザー装置等を用いて貫通孔109が塞がれる。   Then, after the lid 111 is mounted, in order to make the inside of the concave portion 104 from the through hole 109 into a vacuum state, the surroundings of the electronic device are placed in a vacuum atmosphere using a vacuum vessel, and the gas in the concave portion 104 from the through hole 109 is placed. Evacuate. Thereafter, the inside of the recess 104 can be sealed in a vacuum by heating and closing the filler 112 in the through hole 109. Here, as the filler 112, for example, a spherical filler 112 made of Au—Sn solder or Pb—Sn solder can be used. The filler 112 is placed in the through hole 109 shown in FIG. 1C, and the through hole 109 is closed using a hermetic vacuum sealing device, a laser device, or the like.

そして、充填材112と貫通孔109の内側面がしっかり溶着されるように、貫通孔109の表面にはメタライズ層を形成するとよく、他の配線導体と同様にニッケルや金のめっき層が被着されていることが望ましい。このメタライズ層を貫通孔109の上下方向における内面全体に形成した場合は、貫通孔109の内部の上下方向の全域にわたって充填材112を充填することができ、充填材112を電気的或いは熱的な導通手段として用いた場合に電気的抵抗の低減や熱の伝達効率の向上を図ることができる。   Then, a metallized layer may be formed on the surface of the through hole 109 so that the filler 112 and the inner surface of the through hole 109 are firmly welded, and a nickel or gold plating layer is deposited like other wiring conductors. It is desirable that When this metallized layer is formed on the entire inner surface in the vertical direction of the through-hole 109, the filler 112 can be filled over the entire area in the vertical direction inside the through-hole 109, and the filler 112 can be electrically or thermally charged. When used as a conduction means, it is possible to reduce electrical resistance and improve heat transfer efficiency.

また、貫通孔109の上下方向における上部領域と下部領域のうち、下部領域のみにメタライズ層を形成してもよい。この場合、充填材112は、メタライズ層が形成された濡れ性のよい領域に留まり易くなるため、凹部104内まで充填材112が進入することを抑制できる。   Further, the metallized layer may be formed only in the lower region among the upper region and the lower region in the vertical direction of the through hole 109. In this case, since the filler 112 easily stays in the wettable region where the metallized layer is formed, the filler 112 can be prevented from entering the recess 104.

さらには、貫通孔109を上下方向において上部領域、中央部領域、下部領域に分けたときに、中央部領域のみにメタライズ層を形成していてもよい。この場合は、充填材112を貫通孔109の中央部領域にとどめ、充填材112を上下双方の開口からそれぞれ離間させることを可能としやすい。   Furthermore, when the through hole 109 is divided into an upper region, a central region, and a lower region in the vertical direction, a metallized layer may be formed only in the central region. In this case, it is easy to allow the filler 112 to stay in the central region of the through hole 109 and to separate the filler 112 from both the upper and lower openings.

或いは、図1(c)に示すように、貫通孔109に断面が階段形状をなす階段部を形成した場合、貫通孔109のうち、階段部の平坦な箇所にメタライズ層を形成することが望ましい。これにより、充填材112が階段部の平坦な箇所に留まりやすく、凹部104内まで充填材112が進入することを抑制できる。   Alternatively, as shown in FIG. 1C, when a stepped portion having a stepped cross section is formed in the through hole 109, it is desirable to form a metallized layer at a flat portion of the stepped portion of the through hole 109. . Thereby, the filler 112 tends to stay at a flat portion of the staircase portion, and the filler 112 can be prevented from entering the recess 104.

また、本発明の電子装置においては、好ましくは、凹部104に収納される電子部品が圧電振動子108であり、貫通孔109は、平面視で圧電振動子108と重ならない位置に形成されていることを特徴とする。   In the electronic device of the present invention, the electronic component housed in the recess 104 is preferably the piezoelectric vibrator 108, and the through hole 109 is formed at a position that does not overlap the piezoelectric vibrator 108 in plan view. It is characterized by that.

この構造により、貫通孔109を塞ぐための充填材112が、誤って凹部104に収納される圧電振動子108に付着して発振不良となることを抑制することができる。   With this structure, it is possible to prevent the filler 112 for closing the through-hole 109 from erroneously adhering to the piezoelectric vibrator 108 housed in the recess 104 and causing oscillation failure.

また、本発明の電子装置においては、好ましくは、凹部104に収納される電子部品が圧電振動子108であり、段差部105上面の貫通孔109の開口が、圧電振動子108の上面よりも低い位置にあることを特徴とする。   In the electronic device of the present invention, preferably, the electronic component housed in the recess 104 is the piezoelectric vibrator 108, and the opening of the through hole 109 on the upper surface of the stepped portion 105 is lower than the upper surface of the piezoelectric vibrator 108. It is in position.

この構造により、凹部104内の開口周辺に広い隙間を形成することができることから、電子部品を収納したあとに、この隙間を介して効率良く凹部104内のガスを真空引きすることができる。   With this structure, since a wide gap can be formed around the opening in the recess 104, the gas in the recess 104 can be efficiently evacuated through the gap after the electronic component is stored.

本発明の電子装置搭載機器によれば、上記に記載の電子装置と、電子装置の接続端子に接続される外部回路を有する外部配線基板と、接続端子と外部回路とを接続するロウ材とを備え、ロウ材は、貫通孔109を塞ぐ充填材112よりも融点が低いことを特徴とする。   According to the electronic device-equipped device of the present invention, the electronic device described above, an external wiring board having an external circuit connected to the connection terminal of the electronic device, and a brazing material that connects the connection terminal and the external circuit. The brazing material has a lower melting point than the filler 112 that closes the through hole 109.

このような構造により、電子装置を外部配線基板の外部回路に接続するときの熱処理により、貫通孔109を塞いだ充填材112が再溶融して封止不良になることを防止することができる。   With such a structure, it is possible to prevent the filler 112 closing the through-hole 109 from being remelted and causing a sealing failure due to heat treatment when the electronic device is connected to the external circuit of the external wiring board.

具体的には、ロウ材としては低融点Pb−Sn半田系や導電性接着剤等が使用可能であり、また充填材としては、Au−Sn半田系や高融点Pb−Sn半田等が使用可能である。   Specifically, a low melting point Pb—Sn solder system or a conductive adhesive can be used as the brazing material, and an Au—Sn solder system or a high melting point Pb—Sn solder can be used as the filler. It is.

そして、接続端子と外部回路とを接続するロウ材として、例えば、Sn:Pbが6:4である低融点Pb−Sn半田系を使用する場合、ロウ材を溶融させるために、リフロー炉により、最高温度260℃程度、キープ時間10〜20秒程度とすることにより、外部回路に塗布された半田ペーストが溶融して接続端子110と外部回路(図示せず)が接合される。一方、充填材112として、例えば、Au:Snが8:2であるAu−Sn半田系を使用する場合、充填材112を溶融させるために、密閉式の真空封止装置により最高温度を300℃程度に保持したり、レーザー装置等を用いて充填材112にレーザーを照射することにより、貫通孔109内において充填材112が溶融し、その後貫通孔109内に固着される。   Then, as a brazing material for connecting the connection terminal and the external circuit, for example, when using a low melting point Pb-Sn solder system in which Sn: Pb is 6: 4, in order to melt the brazing material, By setting the maximum temperature to about 260 ° C. and the keeping time to about 10 to 20 seconds, the solder paste applied to the external circuit is melted and the connection terminal 110 and the external circuit (not shown) are joined. On the other hand, when using, for example, an Au—Sn solder system in which Au: Sn is 8: 2 as the filler 112, the maximum temperature is set to 300 ° C. by a hermetic vacuum sealing device in order to melt the filler 112. The filler 112 is melted in the through hole 109 by being irradiated with a laser using a laser device or the like, and then fixed in the through hole 109.

なお、充填材112の再溶融による封止不良をより確実に防止するために、充填材112をロウ材から離間させることにより、直接充填材112とロウ材が接することを防止でき、充填材112とロウ材との相互拡散による充填材112の融点の低下を防止することができる。これは、上述した貫通孔109の上下方向における中央部領域や上部領域のみにメタライズ層を形成することにより達成できる。   In order to prevent sealing failure due to remelting of the filler 112 more reliably, the filler 112 can be prevented from coming into direct contact with the filler 112 by separating the filler 112 from the brazing filler metal. It is possible to prevent the melting point of the filler 112 from being lowered due to mutual diffusion between the solder and the brazing material. This can be achieved by forming a metallized layer only in the central region and the upper region in the vertical direction of the through hole 109 described above.

なお、本発明は、上述の実施の形態の例に限定されるものではなく、種々の変形は可能である。例えば、本発明の他の実施形態にかかる電子部品収納用パッケージによれば、絶縁基体101の下面に形成される接続端子110の形状を長方形状とし、長辺側にそれぞれ4つ形成した構成の電子部品収納用パッケージとしたが、接続端子110の絶縁基体101の下面の中央側の先端の形状を半円状として、さらに複数の接続端子110を形成しても良い。   In addition, this invention is not limited to the example of the above-mentioned embodiment, A various deformation | transformation is possible. For example, according to the electronic component storage package according to another embodiment of the present invention, the connection terminal 110 formed on the lower surface of the insulating base 101 has a rectangular shape, and four are formed on the long side. Although the electronic component storage package is described, a plurality of connection terminals 110 may be formed by making the shape of the front end of the connection terminal 110 on the lower surface of the insulating base 101 into a semicircular shape.

また、段差部105yを凹部104内の対向する長辺側に設け、貫通孔109を凹部104の隅部に設けたが、凹部104内の対向する長辺側、および圧電振動子108の端部に近い短辺側にも設けて、短辺側の中央付近に貫通孔109を形成してもよい。この場合、絶縁基体101の下面に形成される接続端子110の1つを長く形成することにより、平面視で絶縁基体101の下面の中央側に貫通孔109を形成すればよい。   Further, although the step portion 105y is provided on the opposite long side in the recess 104 and the through hole 109 is provided in the corner of the recess 104, the opposite long side in the recess 104 and the end of the piezoelectric vibrator 108 are provided. Alternatively, the through hole 109 may be formed near the center of the short side. In this case, by forming one of the connection terminals 110 formed on the lower surface of the insulating base 101 long, the through hole 109 may be formed on the center side of the lower surface of the insulating base 101 in plan view.

さらに、上述の実施の形態の例では、溝113は、基部102の下面側における貫通孔109の開口から基部102の外周端にかけて通じるように、平面視で長方形状に形成したが、その他の形状で形成しても良く、例えば、貫通孔109内のガスをより効率良く排出できるように、平面視で基部102の外周端側に向かって広がるように台形状に形成してもよい。   Furthermore, in the example of the above-described embodiment, the groove 113 is formed in a rectangular shape in plan view so as to extend from the opening of the through hole 109 on the lower surface side of the base 102 to the outer peripheral end of the base 102. For example, it may be formed in a trapezoidal shape so as to spread toward the outer peripheral end of the base 102 in plan view so that the gas in the through hole 109 can be discharged more efficiently.

(a)は、本発明の電子部品収納用パッケージの実施の形態の一例を示す平面図、(b)は下面図、(c)は、(a)のX−X´線における断面透視図である。(A) is a top view which shows an example of embodiment of the electronic component storage package of this invention, (b) is a bottom view, (c) is sectional sectional drawing in the XX 'line of (a). is there. (a)は、従来の電子部品収納用パッケージの実施の形態の一例を示す平面図、(b)は下面図、(c)は、(a)のY−Y´線における断面透視図である。(A) is a top view which shows an example of embodiment of the conventional electronic component storage package, (b) is a bottom view, (c) is a cross-sectional perspective view in the YY 'line of (a). .

符号の説明Explanation of symbols

101・・・・・絶縁基体
102・・・・・基部
103・・・・・枠状部
104・・・・・凹部
105x,105y・・・・・段差部
106x,106y・・・・・電極パッド
107・・・・・半導体素子
108・・・・・圧電振動子
109・・・・・貫通孔
110・・・・・接続端子
111・・・・・蓋体
112・・・・・充填材
113・・・・・溝
114・・・・・蓋体搭載領域
101... Insulating substrate 102... Base 103... Frame-shaped portion 104. Pad 107 Semiconductor element 108 Piezoelectric vibrator 109 Through hole 110 Connection terminal 111 Lid 112 Filler 113... Groove 114... Lid mounting area

Claims (7)

平板状の基部と、該基部の上面に配置され、且つ上部に蓋体搭載領域を有する枠状部とを備え、前記基部及び枠状部により電子部品を収納する凹部が形成されてなる電子部品収容用パッケージであって、
前記枠状部は、凹部側の少なくとも一辺に段差部を備え、該段差部及び基部には、前記段差部の上面から前記基部の下面まで到達する貫通孔が形成されていると共に、該貫通孔は、前記段差部における開口の径よりも、前記基部における開口の径が大きく成してあり、前記基部は、該基部の下面側における前記貫通孔の開口から前記基部の外周端にかけて通じる溝を備えることを特徴とする電子部品収容用パッケージ。
An electronic component comprising a flat base portion and a frame-like portion disposed on the upper surface of the base portion and having a lid mounting area on the upper portion, and a recess for housing the electronic component is formed by the base portion and the frame-like portion. A containment package,
The frame-shaped portion includes a step portion on at least one side on the concave portion side, and the step portion and the base portion are formed with through holes that reach from the upper surface of the step portion to the lower surface of the base portion. groove, than the diameter of the opening in the step portion, Ri Oh forms diameter of the aperture is greater in the base, the base, which leads from the opening of the through hole at the lower surface of the base portion to the outer edge of the base electronic component housing package, wherein Rukoto equipped with.
前記貫通孔の前記段差部側の開口は、該段差部上面に形成された電極パッド上に位置することを特徴とする請求項1に記載の電子部品収納用パッケージ。   2. The electronic component storage package according to claim 1, wherein the opening on the side of the step portion of the through hole is located on an electrode pad formed on an upper surface of the step portion. 前記貫通孔は貫通導体を兼ねると共に、該貫通導体は、グランド電位に保持される外部回路に電気的に接続されることを特徴とする請求項1または2に記載の電子部品収納用パッケージ。   3. The electronic component storage package according to claim 1, wherein the through hole serves as a through conductor, and the through conductor is electrically connected to an external circuit held at a ground potential. 請求項1乃至のいずれかに記載の電子部品収納用パッケージと、前記凹部に収納され
る電子部品と、前記枠状部の蓋体搭載領域に搭載される蓋体と、前記貫通孔を塞ぐ充填材と、を備えることを特徴とする電子装置。
The electronic component storage package according to any one of claims 1 to 3 , an electronic component stored in the recess, a lid mounted in a lid mounting region of the frame-shaped portion, and the through hole being blocked. And an electronic device.
前記凹部に収納される前記電子部品が圧電振動子であり、前記貫通孔は、平面視で前記圧電振動子と重ならない位置に形成されていることを特徴とする請求項に記載の電子装置。 The electronic device according to claim 4 , wherein the electronic component housed in the recess is a piezoelectric vibrator, and the through hole is formed at a position that does not overlap the piezoelectric vibrator in a plan view. . 前記凹部に収納される前記電子部品が圧電振動子であり、前記段差部上面の貫通孔の開口が、前記圧電振動子の上面よりも低い位置にあることを特徴とすることを特徴とする請求項に記載の電子装置。 The electronic component housed in the recess is a piezoelectric vibrator, and the opening of the through hole on the upper surface of the stepped portion is at a position lower than the upper surface of the piezoelectric vibrator. Item 5. The electronic device according to Item 4 . 請求項乃至のいずれかに記載の電子装置と、該電子装置の接続端子に接続される外部回路を有する外部配線基板と、前記接続端子と前記外部回路とを接続するロウ材とを備え、該ロウ材は、前記貫通孔を塞ぐ充填材よりも、融点が低いことを特徴とする電子装置搭載機器。 Comprising an electronic device according to any one of claims 4 to 6, and the external circuit board having an external circuit connected to the connection terminals of the electronic device, and a brazing material connecting the said connection terminal and said external circuit The brazing material has a melting point lower than that of the filler that closes the through hole.
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