JP4850558B2 - 光源装置、及びそれを用いた露光装置、デバイス製造方法 - Google Patents

光源装置、及びそれを用いた露光装置、デバイス製造方法 Download PDF

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Publication number
JP4850558B2
JP4850558B2 JP2006098000A JP2006098000A JP4850558B2 JP 4850558 B2 JP4850558 B2 JP 4850558B2 JP 2006098000 A JP2006098000 A JP 2006098000A JP 2006098000 A JP2006098000 A JP 2006098000A JP 4850558 B2 JP4850558 B2 JP 4850558B2
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JP
Japan
Prior art keywords
magnetic field
debris
mirror
plasma
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006098000A
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English (en)
Japanese (ja)
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JP2007273749A5 (enExample
JP2007273749A (ja
Inventor
一城 藤本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006098000A priority Critical patent/JP4850558B2/ja
Priority to TW096107547A priority patent/TWI373775B/zh
Priority to KR1020070027484A priority patent/KR100821948B1/ko
Priority to US11/691,852 priority patent/US7619233B2/en
Publication of JP2007273749A publication Critical patent/JP2007273749A/ja
Publication of JP2007273749A5 publication Critical patent/JP2007273749A5/ja
Application granted granted Critical
Publication of JP4850558B2 publication Critical patent/JP4850558B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Epidemiology (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Radiation-Therapy Devices (AREA)
JP2006098000A 2006-03-31 2006-03-31 光源装置、及びそれを用いた露光装置、デバイス製造方法 Expired - Fee Related JP4850558B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006098000A JP4850558B2 (ja) 2006-03-31 2006-03-31 光源装置、及びそれを用いた露光装置、デバイス製造方法
TW096107547A TWI373775B (en) 2006-03-31 2007-03-05 Light source
KR1020070027484A KR100821948B1 (ko) 2006-03-31 2007-03-21 광원
US11/691,852 US7619233B2 (en) 2006-03-31 2007-03-27 Light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006098000A JP4850558B2 (ja) 2006-03-31 2006-03-31 光源装置、及びそれを用いた露光装置、デバイス製造方法

Publications (3)

Publication Number Publication Date
JP2007273749A JP2007273749A (ja) 2007-10-18
JP2007273749A5 JP2007273749A5 (enExample) 2009-05-14
JP4850558B2 true JP4850558B2 (ja) 2012-01-11

Family

ID=38557448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006098000A Expired - Fee Related JP4850558B2 (ja) 2006-03-31 2006-03-31 光源装置、及びそれを用いた露光装置、デバイス製造方法

Country Status (4)

Country Link
US (1) US7619233B2 (enExample)
JP (1) JP4850558B2 (enExample)
KR (1) KR100821948B1 (enExample)
TW (1) TWI373775B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7696492B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
JP5098019B2 (ja) * 2007-04-27 2012-12-12 ギガフォトン株式会社 極端紫外光源装置
NL1036768A1 (nl) * 2008-04-29 2009-10-30 Asml Netherlands Bv Radiation source.
EP2113813B1 (en) * 2008-04-29 2012-06-27 ASML Netherlands B.V. Radiation source and lithographic apparatus
JP5061069B2 (ja) * 2008-05-20 2012-10-31 ギガフォトン株式会社 極端紫外光を用いる半導体露光装置
JP5061063B2 (ja) * 2008-05-20 2012-10-31 ギガフォトン株式会社 極端紫外光用ミラーおよび極端紫外光源装置
KR101470528B1 (ko) * 2008-06-09 2014-12-15 삼성전자주식회사 적응 빔포밍을 위한 사용자 방향의 소리 검출 기반의 적응모드 제어 장치 및 방법
NL1036803A (nl) * 2008-09-09 2010-03-15 Asml Netherlands Bv Radiation system and lithographic apparatus.
WO2010043288A1 (en) * 2008-10-17 2010-04-22 Asml Netherlands B.V. Collector assembly, radiation source, lithographic appparatus and device manufacturing method
NL2010274C2 (en) * 2012-02-11 2015-02-26 Media Lario Srl Source-collector modules for euv lithography employing a gic mirror and a lpp source.

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW411527B (en) * 1996-11-14 2000-11-11 Tokyo Electron Ltd Cleaning method for plasma processing system and plasma processing method
JP3582287B2 (ja) * 1997-03-26 2004-10-27 株式会社日立製作所 エッチング装置
TW530189B (en) * 1998-07-01 2003-05-01 Asml Netherlands Bv Lithographic projection apparatus for imaging of a mask pattern and method of manufacturing a device using a lithographic projection apparatus
JP4329177B2 (ja) * 1999-08-18 2009-09-09 株式会社ニコン Ｘ線発生装置及びこれを備えた投影露光装置及び露光方法
TWI255394B (en) * 2002-12-23 2006-05-21 Asml Netherlands Bv Lithographic apparatus with debris suppression means and device manufacturing method
US7217941B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Systems and methods for deflecting plasma-generated ions to prevent the ions from reaching an internal component of an EUV light source
SG118268A1 (en) * 2003-06-27 2006-01-27 Asml Netherlands Bv Laser produced plasma radiation system with foil trap
DE10337667B4 (de) * 2003-08-12 2012-03-22 Xtreme Technologies Gmbh Plasma-Strahlungsquelle und Anordnung zur Erzeugung eines Gasvorhangs für Plasma-Strahlungsquellen
JP4458330B2 (ja) * 2003-12-26 2010-04-28 キヤノン株式会社 光源ユニットの多層膜ミラーを交換する方法
US7251012B2 (en) * 2003-12-31 2007-07-31 Asml Netherlands B.V. Lithographic apparatus having a debris-mitigation system, a source for producing EUV radiation having a debris mitigation system and a method for mitigating debris
JP4535732B2 (ja) * 2004-01-07 2010-09-01 株式会社小松製作所 光源装置及びそれを用いた露光装置
JP4578901B2 (ja) * 2004-09-09 2010-11-10 株式会社小松製作所 極端紫外光源装置
JP4937643B2 (ja) * 2006-05-29 2012-05-23 株式会社小松製作所 極端紫外光源装置
US8071963B2 (en) * 2006-12-27 2011-12-06 Asml Netherlands B.V. Debris mitigation system and lithographic apparatus
JP5277496B2 (ja) * 2007-04-27 2013-08-28 ギガフォトン株式会社 極端紫外光源装置および極端紫外光源装置の光学素子汚染防止装置

Also Published As

Publication number Publication date
KR100821948B1 (ko) 2008-04-15
JP2007273749A (ja) 2007-10-18
US7619233B2 (en) 2009-11-17
US20070228303A1 (en) 2007-10-04
KR20070098533A (ko) 2007-10-05
TWI373775B (en) 2012-10-01
TW200802410A (en) 2008-01-01

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