JP4841836B2 - フリップチップ式発光ダイオードの発光装置製造方法 - Google Patents

フリップチップ式発光ダイオードの発光装置製造方法

Info

Publication number
JP4841836B2
JP4841836B2 JP2004378605A JP2004378605A JP4841836B2 JP 4841836 B2 JP4841836 B2 JP 4841836B2 JP 2004378605 A JP2004378605 A JP 2004378605A JP 2004378605 A JP2004378605 A JP 2004378605A JP 4841836 B2 JP4841836 B2 JP 4841836B2
Authority
JP
Japan
Prior art keywords
light emitting
strip
emitting diode
light
base material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004378605A
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English (en)
Japanese (ja)
Other versions
JP2005101665A (ja
JP2005101665A5 (https=
Inventor
陳振賢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NeoBulb Technologies Inc
Original Assignee
NeoBulb Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NeoBulb Technologies Inc filed Critical NeoBulb Technologies Inc
Publication of JP2005101665A publication Critical patent/JP2005101665A/ja
Publication of JP2005101665A5 publication Critical patent/JP2005101665A5/ja
Application granted granted Critical
Publication of JP4841836B2 publication Critical patent/JP4841836B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Led Device Packages (AREA)
JP2004378605A 2004-11-05 2004-12-28 フリップチップ式発光ダイオードの発光装置製造方法 Expired - Fee Related JP4841836B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW093133779 2004-11-05
TW093133779A TWI244226B (en) 2004-11-05 2004-11-05 Manufacturing method of flip-chip light-emitting device

Publications (3)

Publication Number Publication Date
JP2005101665A JP2005101665A (ja) 2005-04-14
JP2005101665A5 JP2005101665A5 (https=) 2007-06-28
JP4841836B2 true JP4841836B2 (ja) 2011-12-21

Family

ID=34465029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004378605A Expired - Fee Related JP4841836B2 (ja) 2004-11-05 2004-12-28 フリップチップ式発光ダイオードの発光装置製造方法

Country Status (4)

Country Link
US (5) US7629188B2 (https=)
JP (1) JP4841836B2 (https=)
KR (1) KR100843884B1 (https=)
TW (1) TWI244226B (https=)

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TWI241042B (en) * 2004-03-11 2005-10-01 Chen-Lun Hsingchen A low thermal resistance LED device
TWI244226B (en) * 2004-11-05 2005-11-21 Chen Jen Shian Manufacturing method of flip-chip light-emitting device
WO2006050607A1 (en) * 2004-11-10 2006-05-18 Microbridge Technologies Inc. Etching technique for creation of thermally-isolated microstructures
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
EP2280430B1 (en) * 2005-03-11 2020-01-01 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series
TWI274430B (en) * 2005-09-28 2007-02-21 Ind Tech Res Inst Light emitting device
CN100499188C (zh) * 2005-10-10 2009-06-10 财团法人工业技术研究院 发光装置
US9640737B2 (en) 2011-01-31 2017-05-02 Cree, Inc. Horizontal light emitting diodes including phosphor particles
US9754926B2 (en) 2011-01-31 2017-09-05 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9660153B2 (en) 2007-11-14 2017-05-23 Cree, Inc. Gap engineering for flip-chip mounted horizontal LEDs
US8138027B2 (en) 2008-03-07 2012-03-20 Stats Chippac, Ltd. Optical semiconductor device having pre-molded leadframe with window and method therefor
TWI419357B (zh) * 2008-03-12 2013-12-11 Bright Led Electronics Corp Manufacturing method of light emitting module
TWI423421B (zh) * 2009-01-17 2014-01-11 佰鴻工業股份有限公司 A light emitting device and a manufacturing method thereof
KR101047603B1 (ko) * 2009-03-10 2011-07-07 엘지이노텍 주식회사 발광 소자 패키지 및 그 제조방법
US8610156B2 (en) 2009-03-10 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
US9385285B2 (en) * 2009-09-17 2016-07-05 Koninklijke Philips N.V. LED module with high index lens
US9502612B2 (en) * 2009-09-20 2016-11-22 Viagan Ltd. Light emitting diode package with enhanced heat conduction
US9631782B2 (en) * 2010-02-04 2017-04-25 Xicato, Inc. LED-based rectangular illumination device
KR101766719B1 (ko) * 2010-03-25 2017-08-09 엘지이노텍 주식회사 발광 다이오드 및 이를 포함하는 발광 소자 패키지
US9240526B2 (en) * 2010-04-23 2016-01-19 Cree, Inc. Solid state light emitting diode packages with leadframes and ceramic material
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US9673363B2 (en) * 2011-01-31 2017-06-06 Cree, Inc. Reflective mounting substrates for flip-chip mounted horizontal LEDs
US9401103B2 (en) 2011-02-04 2016-07-26 Cree, Inc. LED-array light source with aspect ratio greater than 1
CN103137833A (zh) * 2013-03-15 2013-06-05 深圳市瑞丰光电子股份有限公司 一种led封装方法及结构
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
JP7231809B2 (ja) * 2018-06-05 2023-03-02 日亜化学工業株式会社 発光装置
TWI662724B (zh) * 2018-06-06 2019-06-11 海華科技股份有限公司 覆晶式發光模組

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US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5482896A (en) * 1993-11-18 1996-01-09 Eastman Kodak Company Light emitting device comprising an organic LED array on an ultra thin substrate and process for forming same
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JP2000006467A (ja) * 1998-06-24 2000-01-11 Matsushita Electron Corp 画像書込みデバイス
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EP1387412B1 (en) * 2001-04-12 2009-03-11 Matsushita Electric Works, Ltd. Light source device using led, and method of producing same
US6936855B1 (en) * 2002-01-16 2005-08-30 Shane Harrah Bendable high flux LED array
TW518775B (en) * 2002-01-29 2003-01-21 Chi-Hsing Hsu Immersion cooling type light emitting diode and its packaging method
JP4280050B2 (ja) 2002-10-07 2009-06-17 シチズン電子株式会社 白色発光装置
TW561636B (en) * 2002-10-11 2003-11-11 Highlink Technology Corp Optoelectronic device
US7170151B2 (en) * 2003-01-16 2007-01-30 Philips Lumileds Lighting Company, Llc Accurate alignment of an LED assembly
JP4201609B2 (ja) * 2003-01-24 2008-12-24 三洋電機株式会社 半導体発光素子および半導体素子
US7495322B2 (en) * 2003-05-26 2009-02-24 Panasonic Electric Works Co., Ltd. Light-emitting device
DE102004034166B4 (de) * 2003-07-17 2015-08-20 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung
WO2005043637A1 (ja) * 2003-10-31 2005-05-12 Toyoda Gosei Co., Ltd. 発光装置
TWI244226B (en) * 2004-11-05 2005-11-21 Chen Jen Shian Manufacturing method of flip-chip light-emitting device
EP2280430B1 (en) * 2005-03-11 2020-01-01 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series

Also Published As

Publication number Publication date
US7795626B2 (en) 2010-09-14
US7652298B2 (en) 2010-01-26
US7629188B2 (en) 2009-12-08
JP2005101665A (ja) 2005-04-14
TW200616250A (en) 2006-05-16
KR100843884B1 (ko) 2008-07-03
US20100133558A1 (en) 2010-06-03
US7646030B2 (en) 2010-01-12
US20070257344A1 (en) 2007-11-08
US8120052B2 (en) 2012-02-21
US20080142818A1 (en) 2008-06-19
US20060097276A1 (en) 2006-05-11
US20080001164A1 (en) 2008-01-03
TWI244226B (en) 2005-11-21
KR20050115829A (ko) 2005-12-08

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