KR100843884B1 - 플립 칩 유형의 ｌｅｄ 조명 장치 및 그의 제조 방법 - Google Patents

플립 칩 유형의 ｌｅｄ 조명 장치 및 그의 제조 방법 Download PDF

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Publication number
KR100843884B1
KR100843884B1 KR1020050093319A KR20050093319A KR100843884B1 KR 100843884 B1 KR100843884 B1 KR 100843884B1 KR 1020050093319 A KR1020050093319 A KR 1020050093319A KR 20050093319 A KR20050093319 A KR 20050093319A KR 100843884 B1 KR100843884 B1 KR 100843884B1
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South Korea
Prior art keywords
submount
flip chip
lighting device
led lighting
strip
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Expired - Fee Related
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KR1020050093319A
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English (en)
Korean (ko)
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KR20050115829A (ko
Inventor
첸 제프리
젠 린 충
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네오벌브 테크놀러지스 인크
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Led Device Packages (AREA)
KR1020050093319A 2004-11-05 2005-10-05 플립 칩 유형의 ｌｅｄ 조명 장치 및 그의 제조 방법 Expired - Fee Related KR100843884B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW093133779 2004-11-05
TW093133779A TWI244226B (en) 2004-11-05 2004-11-05 Manufacturing method of flip-chip light-emitting device

Publications (2)

Publication Number Publication Date
KR20050115829A KR20050115829A (ko) 2005-12-08
KR100843884B1 true KR100843884B1 (ko) 2008-07-03

Family

ID=34465029

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050093319A Expired - Fee Related KR100843884B1 (ko) 2004-11-05 2005-10-05 플립 칩 유형의 ｌｅｄ 조명 장치 및 그의 제조 방법

Country Status (4)

Country Link
US (5) US7629188B2 (https=)
JP (1) JP4841836B2 (https=)
KR (1) KR100843884B1 (https=)
TW (1) TWI244226B (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI241042B (en) * 2004-03-11 2005-10-01 Chen-Lun Hsingchen A low thermal resistance LED device
TWI244226B (en) * 2004-11-05 2005-11-21 Chen Jen Shian Manufacturing method of flip-chip light-emitting device
WO2006050607A1 (en) * 2004-11-10 2006-05-18 Microbridge Technologies Inc. Etching technique for creation of thermally-isolated microstructures
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
EP2280430B1 (en) * 2005-03-11 2020-01-01 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series
TWI274430B (en) * 2005-09-28 2007-02-21 Ind Tech Res Inst Light emitting device
CN100499188C (zh) * 2005-10-10 2009-06-10 财团法人工业技术研究院 发光装置
US9640737B2 (en) 2011-01-31 2017-05-02 Cree, Inc. Horizontal light emitting diodes including phosphor particles
US9754926B2 (en) 2011-01-31 2017-09-05 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9660153B2 (en) 2007-11-14 2017-05-23 Cree, Inc. Gap engineering for flip-chip mounted horizontal LEDs
US8138027B2 (en) 2008-03-07 2012-03-20 Stats Chippac, Ltd. Optical semiconductor device having pre-molded leadframe with window and method therefor
TWI419357B (zh) * 2008-03-12 2013-12-11 Bright Led Electronics Corp Manufacturing method of light emitting module
TWI423421B (zh) * 2009-01-17 2014-01-11 佰鴻工業股份有限公司 A light emitting device and a manufacturing method thereof
KR101047603B1 (ko) * 2009-03-10 2011-07-07 엘지이노텍 주식회사 발광 소자 패키지 및 그 제조방법
US8610156B2 (en) 2009-03-10 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
US9385285B2 (en) * 2009-09-17 2016-07-05 Koninklijke Philips N.V. LED module with high index lens
US9502612B2 (en) * 2009-09-20 2016-11-22 Viagan Ltd. Light emitting diode package with enhanced heat conduction
US9631782B2 (en) * 2010-02-04 2017-04-25 Xicato, Inc. LED-based rectangular illumination device
KR101766719B1 (ko) * 2010-03-25 2017-08-09 엘지이노텍 주식회사 발광 다이오드 및 이를 포함하는 발광 소자 패키지
US9240526B2 (en) * 2010-04-23 2016-01-19 Cree, Inc. Solid state light emitting diode packages with leadframes and ceramic material
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US9673363B2 (en) * 2011-01-31 2017-06-06 Cree, Inc. Reflective mounting substrates for flip-chip mounted horizontal LEDs
US9401103B2 (en) 2011-02-04 2016-07-26 Cree, Inc. LED-array light source with aspect ratio greater than 1
CN103137833A (zh) * 2013-03-15 2013-06-05 深圳市瑞丰光电子股份有限公司 一种led封装方法及结构
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
JP7231809B2 (ja) * 2018-06-05 2023-03-02 日亜化学工業株式会社 発光装置
TWI662724B (zh) * 2018-06-06 2019-06-11 海華科技股份有限公司 覆晶式發光模組

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1138244A (ja) 1997-07-24 1999-02-12 Toshiba Corp 光モジュール
KR20010108939A (ko) * 2000-06-01 2001-12-08 유무친 발광다이오드 및 블랭크를 지닌 발광다이오드 제조방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5482896A (en) * 1993-11-18 1996-01-09 Eastman Kodak Company Light emitting device comprising an organic LED array on an ultra thin substrate and process for forming same
JP2000006467A (ja) * 1998-06-24 2000-01-11 Matsushita Electron Corp 画像書込みデバイス
EP1387412B1 (en) * 2001-04-12 2009-03-11 Matsushita Electric Works, Ltd. Light source device using led, and method of producing same
US6936855B1 (en) * 2002-01-16 2005-08-30 Shane Harrah Bendable high flux LED array
TW518775B (en) * 2002-01-29 2003-01-21 Chi-Hsing Hsu Immersion cooling type light emitting diode and its packaging method
JP4280050B2 (ja) 2002-10-07 2009-06-17 シチズン電子株式会社 白色発光装置
TW561636B (en) * 2002-10-11 2003-11-11 Highlink Technology Corp Optoelectronic device
US7170151B2 (en) * 2003-01-16 2007-01-30 Philips Lumileds Lighting Company, Llc Accurate alignment of an LED assembly
JP4201609B2 (ja) * 2003-01-24 2008-12-24 三洋電機株式会社 半導体発光素子および半導体素子
US7495322B2 (en) * 2003-05-26 2009-02-24 Panasonic Electric Works Co., Ltd. Light-emitting device
DE102004034166B4 (de) * 2003-07-17 2015-08-20 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung
WO2005043637A1 (ja) * 2003-10-31 2005-05-12 Toyoda Gosei Co., Ltd. 発光装置
TWI244226B (en) * 2004-11-05 2005-11-21 Chen Jen Shian Manufacturing method of flip-chip light-emitting device
EP2280430B1 (en) * 2005-03-11 2020-01-01 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1138244A (ja) 1997-07-24 1999-02-12 Toshiba Corp 光モジュール
KR20010108939A (ko) * 2000-06-01 2001-12-08 유무친 발광다이오드 및 블랭크를 지닌 발광다이오드 제조방법

Also Published As

Publication number Publication date
US7795626B2 (en) 2010-09-14
US7652298B2 (en) 2010-01-26
US7629188B2 (en) 2009-12-08
JP2005101665A (ja) 2005-04-14
TW200616250A (en) 2006-05-16
US20100133558A1 (en) 2010-06-03
US7646030B2 (en) 2010-01-12
US20070257344A1 (en) 2007-11-08
US8120052B2 (en) 2012-02-21
US20080142818A1 (en) 2008-06-19
US20060097276A1 (en) 2006-05-11
US20080001164A1 (en) 2008-01-03
TWI244226B (en) 2005-11-21
JP4841836B2 (ja) 2011-12-21
KR20050115829A (ko) 2005-12-08

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