JP4838476B2 - マイクロマシーニング構造素子の製造法および該方法により製造された構造素子 - Google Patents

マイクロマシーニング構造素子の製造法および該方法により製造された構造素子 Download PDF

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Publication number
JP4838476B2
JP4838476B2 JP2001558361A JP2001558361A JP4838476B2 JP 4838476 B2 JP4838476 B2 JP 4838476B2 JP 2001558361 A JP2001558361 A JP 2001558361A JP 2001558361 A JP2001558361 A JP 2001558361A JP 4838476 B2 JP4838476 B2 JP 4838476B2
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layer
sacrificial layer
protective layer
sacrificial
etched
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Japanese (ja)
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JP2003531017A5 (cg-RX-API-DMAC7.html
JP2003531017A (ja
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フィッシャー フランク
ハイン ペーター
グラフ エックハルト
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
    • B81C1/00801—Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0136—Comb structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/05—Temporary protection of devices or parts of the devices during manufacturing
    • B81C2201/053—Depositing a protective layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
JP2001558361A 2000-02-10 2000-12-28 マイクロマシーニング構造素子の製造法および該方法により製造された構造素子 Expired - Fee Related JP4838476B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10006035.8 2000-02-10
DE10006035A DE10006035A1 (de) 2000-02-10 2000-02-10 Verfahren zur Herstellung eines mikromechanischen Bauelements sowie ein nach dem Verfahren hergestelltes Bauelement
PCT/DE2000/004673 WO2001058803A2 (de) 2000-02-10 2000-12-28 Verfahren zur herstellung eines mikromechanischen bauelements sowie ein nach dem verfahren hergestelltes bauelement

Publications (3)

Publication Number Publication Date
JP2003531017A JP2003531017A (ja) 2003-10-21
JP2003531017A5 JP2003531017A5 (cg-RX-API-DMAC7.html) 2011-09-08
JP4838476B2 true JP4838476B2 (ja) 2011-12-14

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JP2001558361A Expired - Fee Related JP4838476B2 (ja) 2000-02-10 2000-12-28 マイクロマシーニング構造素子の製造法および該方法により製造された構造素子

Country Status (5)

Country Link
US (1) US6951824B2 (cg-RX-API-DMAC7.html)
EP (1) EP1257496A2 (cg-RX-API-DMAC7.html)
JP (1) JP4838476B2 (cg-RX-API-DMAC7.html)
DE (1) DE10006035A1 (cg-RX-API-DMAC7.html)
WO (1) WO2001058803A2 (cg-RX-API-DMAC7.html)

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DE10047189C1 (de) * 2000-09-23 2002-02-21 Bosch Gmbh Robert Verfahren zur Insassenklassifikation mit einer Sitzmatte im Fahrzeugsitz
DE10117257A1 (de) * 2001-04-06 2002-10-17 Eads Deutschland Gmbh Mikromechanischer kapazitiver Beschleunigungssensor
AU2003222525C1 (en) * 2002-04-10 2010-04-08 Fisher & Paykel Appliances Limited A laundry appliance
DE10231729B4 (de) * 2002-07-13 2011-08-11 Robert Bosch GmbH, 70469 Bauelement mit einer oberflächenmikromechanischen Struktur
US7781850B2 (en) 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
DE10246283B3 (de) * 2002-10-02 2004-03-25 Infineon Technologies Ag Verfahren zur Herstellung von Kanälen und Kavitäten in Halbleitergehäusen und elektronisches Bauteil mit derartigen Kanälen und Kavitäten
US6939809B2 (en) * 2002-12-30 2005-09-06 Robert Bosch Gmbh Method for release of surface micromachined structures in an epitaxial reactor
US20040166606A1 (en) * 2003-02-26 2004-08-26 David Forehand Low temperature wafer-level micro-encapsulation
US7514283B2 (en) * 2003-03-20 2009-04-07 Robert Bosch Gmbh Method of fabricating electromechanical device having a controlled atmosphere
US7075160B2 (en) 2003-06-04 2006-07-11 Robert Bosch Gmbh Microelectromechanical systems and devices having thin film encapsulated mechanical structures
US6936491B2 (en) 2003-06-04 2005-08-30 Robert Bosch Gmbh Method of fabricating microelectromechanical systems and devices having trench isolated contacts
US6952041B2 (en) 2003-07-25 2005-10-04 Robert Bosch Gmbh Anchors for microelectromechanical systems having an SOI substrate, and method of fabricating same
DE10348908B4 (de) * 2003-10-21 2014-03-20 Robert Bosch Gmbh Verfahren zur Herstellung eines Mikrosystems mit integrierter Schaltung und mikromechanischem Bauteil
EP1855142A3 (en) 2004-07-29 2008-07-30 Idc, Llc System and method for micro-electromechanical operating of an interferometric modulator
DE102004036803A1 (de) 2004-07-29 2006-03-23 Robert Bosch Gmbh Verfahren zum Ätzen einer Schicht auf einem Substrat
JP4552783B2 (ja) * 2005-07-06 2010-09-29 株式会社デンソー 半導体センサ
EP2495212A3 (en) 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
WO2007013992A1 (en) 2005-07-22 2007-02-01 Qualcomm Incorporated Support structure for mems device and methods therefor
CN101228093B (zh) 2005-07-22 2012-11-28 高通Mems科技公司 具有支撑结构的mems装置及其制造方法
JP4479006B2 (ja) * 2005-07-28 2010-06-09 セイコーエプソン株式会社 半導体装置の製造方法
US7956428B2 (en) 2005-08-16 2011-06-07 Robert Bosch Gmbh Microelectromechanical devices and fabrication methods
US7630114B2 (en) * 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US20070170528A1 (en) 2006-01-20 2007-07-26 Aaron Partridge Wafer encapsulated microelectromechanical structure and method of manufacturing same
US7450295B2 (en) 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
DE102006024668A1 (de) * 2006-05-26 2007-11-29 Robert Bosch Gmbh Mikromechanisches Bauelement und Verfahren zu dessen Herstellung
DE102006033176B4 (de) 2006-07-18 2023-05-25 Robert Bosch Gmbh Mikromechanisches Bauelement mit einem Anschlagelement
DE102006052630A1 (de) * 2006-10-19 2008-04-24 Robert Bosch Gmbh Mikromechanisches Bauelement mit monolithisch integrierter Schaltung und Verfahren zur Herstellung eines Bauelements
DE102006049259A1 (de) 2006-10-19 2008-04-30 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelementes mit einer Dünnschicht-Verkappung
US20080119003A1 (en) * 2006-11-17 2008-05-22 Charles Grosjean Substrate contact for a MEMS device
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
DE102007025880A1 (de) 2007-06-01 2008-12-04 Robert Bosch Gmbh Mikromechanisches Bauelement und Verfahren zur Herstellung eines mikromechanischen Bauelements mit einer Dünnschichtkappe
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CN101925983A (zh) * 2007-12-21 2010-12-22 苏威氟有限公司 用于生产微机电系统的方法
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US8648432B2 (en) * 2011-11-28 2014-02-11 Texas Instruments Deutschland Gmbh Fully embedded micromechanical device, system on chip and method for manufacturing the same
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CN108538835B (zh) * 2018-05-16 2024-02-06 长鑫存储技术有限公司 电容器阵列结构及其制备方法
CN112661105B (zh) * 2020-12-29 2023-08-29 无锡微视传感科技有限公司 基于梳齿局部氧化的mems高低梳齿结构的制作方法
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JPS6055655A (ja) * 1983-09-07 1985-03-30 Nissan Motor Co Ltd 梁構造体を有する半導体装置
JPH05332852A (ja) * 1990-04-11 1993-12-17 Wisconsin Alumni Res Found 多結晶シリコン共振ビーム変換器およびその製造方法
US5285131A (en) * 1990-12-03 1994-02-08 University Of California - Berkeley Vacuum-sealed silicon incandescent light
JPH06123628A (ja) * 1992-10-12 1994-05-06 Nippondenso Co Ltd 半導体力学センサ及びその製造方法
US5846849A (en) * 1993-02-04 1998-12-08 Cornell Research Foundation, Inc. Microstructure and single mask, single-crystal process for fabrication thereof
JPH11150278A (ja) * 1997-07-10 1999-06-02 St Microelectron Srl 集成センサー及びその製造方法

Also Published As

Publication number Publication date
WO2001058803A2 (de) 2001-08-16
US6951824B2 (en) 2005-10-04
EP1257496A2 (de) 2002-11-20
DE10006035A1 (de) 2001-08-16
WO2001058803A3 (de) 2002-03-14
US20030141561A1 (en) 2003-07-31
JP2003531017A (ja) 2003-10-21

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