JP4827313B2 - 発光装置の作製方法 - Google Patents
発光装置の作製方法 Download PDFInfo
- Publication number
- JP4827313B2 JP4827313B2 JP2001121821A JP2001121821A JP4827313B2 JP 4827313 B2 JP4827313 B2 JP 4827313B2 JP 2001121821 A JP2001121821 A JP 2001121821A JP 2001121821 A JP2001121821 A JP 2001121821A JP 4827313 B2 JP4827313 B2 JP 4827313B2
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- Prior art keywords
- layer
- light
- colored layer
- film
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001121821A JP4827313B2 (ja) | 2000-04-25 | 2001-04-19 | 発光装置の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000124019 | 2000-04-25 | ||
| JP2000124019 | 2000-04-25 | ||
| JP2000-124019 | 2000-04-25 | ||
| JP2001121821A JP4827313B2 (ja) | 2000-04-25 | 2001-04-19 | 発光装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002015861A JP2002015861A (ja) | 2002-01-18 |
| JP2002015861A5 JP2002015861A5 (enExample) | 2008-04-24 |
| JP4827313B2 true JP4827313B2 (ja) | 2011-11-30 |
Family
ID=26590730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001121821A Expired - Fee Related JP4827313B2 (ja) | 2000-04-25 | 2001-04-19 | 発光装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4827313B2 (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4490403B2 (ja) * | 2002-01-18 | 2010-06-23 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US6909240B2 (en) | 2002-01-18 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US7098069B2 (en) | 2002-01-24 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of preparing the same and device for fabricating the same |
| SG126714A1 (en) * | 2002-01-24 | 2006-11-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| JP2003217843A (ja) * | 2002-01-24 | 2003-07-31 | Seiko Epson Corp | 表示装置の製造方法、電子機器の製造方法、表示装置および電子機器 |
| JP2003217855A (ja) * | 2002-01-28 | 2003-07-31 | Matsushita Electric Ind Co Ltd | エレクトロルミネッセンス表示装置及びその製造方法 |
| JP2003257616A (ja) * | 2002-02-27 | 2003-09-12 | Ricoh Co Ltd | 機能性素子基板および該機能性素子基板を用いた画像表示装置 |
| JP4651916B2 (ja) * | 2002-03-07 | 2011-03-16 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| EP1343206B1 (en) | 2002-03-07 | 2016-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus |
| TWI362128B (en) | 2002-03-26 | 2012-04-11 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| JP4545385B2 (ja) * | 2002-03-26 | 2010-09-15 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| KR20030086166A (ko) * | 2002-05-03 | 2003-11-07 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자와 그 제조방법 |
| KR100915616B1 (ko) | 2002-05-23 | 2009-09-07 | 후지 덴키 홀딩스 가부시키가이샤 | 유기 el 디스플레이 |
| JP2004039371A (ja) * | 2002-07-02 | 2004-02-05 | Korai Kagi Kofun Yugenkoshi | 白色光有機エレクトロルミネッセント装置及びその製造方法 |
| JP4380124B2 (ja) * | 2002-08-21 | 2009-12-09 | セイコーエプソン株式会社 | 発光装置並びに電子機器 |
| JP4251874B2 (ja) * | 2003-01-21 | 2009-04-08 | 三洋電機株式会社 | エレクトロルミネッセンス表示装置 |
| JP4266648B2 (ja) | 2003-01-21 | 2009-05-20 | 三洋電機株式会社 | エレクトロルミネッセンス表示装置 |
| US20070275181A1 (en) | 2003-05-16 | 2007-11-29 | Carcia Peter F | Barrier films for plastic substrates fabricated by atomic layer deposition |
| TWI238449B (en) | 2003-06-06 | 2005-08-21 | Pioneer Corp | Organic semiconductor device and method of manufacture of same |
| JP4595955B2 (ja) * | 2003-10-23 | 2010-12-08 | セイコーエプソン株式会社 | 有機el装置の製造方法、有機el装置、電子機器 |
| JP4689249B2 (ja) * | 2003-11-28 | 2011-05-25 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| KR101061730B1 (ko) | 2003-11-28 | 2011-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 그 제조 방법 |
| JP4606767B2 (ja) * | 2004-04-14 | 2011-01-05 | 共同印刷株式会社 | 表示装置用素子基板の製造方法 |
| US7268498B2 (en) | 2004-04-28 | 2007-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP2005331796A (ja) * | 2004-05-21 | 2005-12-02 | Toppan Printing Co Ltd | カラーフィルタ及びカラーディスプレイ装置 |
| US8772783B2 (en) | 2004-10-14 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP4954527B2 (ja) * | 2004-10-14 | 2012-06-20 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP2006252775A (ja) * | 2005-03-07 | 2006-09-21 | Ricoh Co Ltd | ディスプレイ装置 |
| KR100742372B1 (ko) | 2005-11-29 | 2007-07-24 | 삼성에스디아이 주식회사 | 유기전계발광소자의 제조방법 |
| JP5076994B2 (ja) * | 2007-03-30 | 2012-11-21 | 大日本印刷株式会社 | 発光型有機el表示パネル |
| JP2008277270A (ja) * | 2007-03-30 | 2008-11-13 | Dainippon Printing Co Ltd | 発光型有機el表示パネル |
| JP5703569B2 (ja) * | 2010-02-23 | 2015-04-22 | 大日本印刷株式会社 | 有機el素子パネル及びその製造方法 |
| KR102161078B1 (ko) * | 2012-08-28 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제작 방법 |
| JP6070026B2 (ja) * | 2012-10-02 | 2017-02-01 | 大日本印刷株式会社 | 有機el表示装置 |
| JP6308543B2 (ja) * | 2013-05-27 | 2018-04-11 | 新日鉄住金化学株式会社 | 有機el表示装置の製造方法 |
| US9766517B2 (en) * | 2014-09-05 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and display module |
| EP3679422B1 (en) * | 2017-09-04 | 2024-02-21 | BOE Technology Group Co., Ltd. | Display substrate and display apparatus |
Family Cites Families (7)
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| JP3407451B2 (ja) * | 1994-01-18 | 2003-05-19 | セイコーエプソン株式会社 | 液晶表示装置の製造方法 |
| JP3578828B2 (ja) * | 1995-03-21 | 2004-10-20 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JPH11191487A (ja) * | 1997-12-26 | 1999-07-13 | Chisso Corp | 有機el素子の作製方法 |
| JP3408133B2 (ja) * | 1998-01-28 | 2003-05-19 | シャープ株式会社 | カラーエレクトロルミネセント表示装置の製造方法およびカラーエレクトロルミネセント表示装置 |
| JP3799882B2 (ja) * | 1998-07-24 | 2006-07-19 | セイコーエプソン株式会社 | 表示装置 |
| JP3660831B2 (ja) * | 1999-07-05 | 2005-06-15 | 株式会社日立製作所 | 薄膜型電子源および表示装置 |
| JP4712198B2 (ja) * | 2000-02-01 | 2011-06-29 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
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