JP4827313B2 - Method for manufacturing light emitting device - Google Patents

Method for manufacturing light emitting device Download PDF

Info

Publication number
JP4827313B2
JP4827313B2 JP2001121821A JP2001121821A JP4827313B2 JP 4827313 B2 JP4827313 B2 JP 4827313B2 JP 2001121821 A JP2001121821 A JP 2001121821A JP 2001121821 A JP2001121821 A JP 2001121821A JP 4827313 B2 JP4827313 B2 JP 4827313B2
Authority
JP
Japan
Prior art keywords
layer
light
colored layer
light emitting
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2001121821A
Other languages
Japanese (ja)
Other versions
JP2002015861A (en
JP2002015861A5 (en
Inventor
潤 小山
舜平 山崎
和隆 犬飼
健司 福永
Original Assignee
株式会社半導体エネルギー研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2000124019 priority Critical
Priority to JP2000124019 priority
Priority to JP2000-124019 priority
Application filed by 株式会社半導体エネルギー研究所 filed Critical 株式会社半導体エネルギー研究所
Priority to JP2001121821A priority patent/JP4827313B2/en
Publication of JP2002015861A publication Critical patent/JP2002015861A/en
Publication of JP2002015861A5 publication Critical patent/JP2002015861A5/ja
Application granted granted Critical
Publication of JP4827313B2 publication Critical patent/JP4827313B2/en
Application status is Active legal-status Critical
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3206Multi-colour light emission
    • H01L27/322Multi-colour light emission using colour filters or colour changing media [CCM]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a light emitting device having an element in which a luminescent material is sandwiched between electrodes and an electric appliance using the light emitting device for a display unit (display display or display monitor). In particular, the present invention relates to a light-emitting device using a light-emitting material (hereinafter referred to as EL material) from which EL (Electro Luminescence) can be obtained. An organic EL display and an organic light emitting diode (OLED) are included in the light emitting device of the present invention.
[0002]
The luminescent material that can be used in the present invention includes all luminescent materials that emit light (phosphorescence and / or fluorescence) via singlet excitation, triplet excitation, or both excitation.
[0003]
[Prior art]
In recent years, development of a light-emitting device (hereinafter referred to as an EL light-emitting device) using a light-emitting element (hereinafter referred to as an EL element) using the EL phenomenon of a light-emitting material has been advanced. Since EL light-emitting devices are display devices that use self-luminous elements, they do not require a backlight like a liquid crystal display and have a wide viewing angle, so they are attracting attention as display units for portable devices used outdoors. .
[0004]
There is a method of using a color filter as a method of displaying a color image in an EL light emitting device. For example, it is possible to obtain light of each color by forming an EL element that emits white light and passing white light emitted therefrom through a colored layer corresponding to R (red), G (green), or B (blue). it can.
[0005]
In the case of adopting such a method, conventionally, a colored layer is provided in accordance with the position of each pixel on a substrate on which an EL element is formed. Therefore, at least three photolithography processes are required.
[0006]
However, if the photolithography process is performed three times, not only the manufacturing process of the EL light emitting device becomes complicated, but also the yield of individual photolithography processes can be multiplied, which may cause a significant decrease in yield. There was a problem. As a result, there has been a problem of an increase in manufacturing cost due to a decrease in yield and a prolonged manufacturing period.
[0007]
[Problems to be solved by the invention]
The present invention has been made in view of the above problems, and it is an object of the present invention to provide a structure and a manufacturing method of a light-emitting device that is not affected by the yield of a photolithography process for forming a colored layer. Then, it is an object to provide an inexpensive light-emitting device by improving yield and shortening a manufacturing period and reducing manufacturing cost. Another object is to provide an inexpensive electric appliance using an inexpensive light-emitting device as a display portion.
[0008]
[Means for Solving the Problems]
The present invention aims to improve the yield of the light emitting device and shorten the manufacturing period by reducing the photolithography process for forming the colored layer. Specifically, a color filter is manufactured by a manufacturing process different from that for a substrate over which a light-emitting element is formed, and the light-emitting device is completed by bonding the color filters.
[0009]
The color filter refers to an optical filter having individual wavelength sensitivity characteristics. That is, the optical filter including the transparent substrate, the colored layer, and the resin layer (overcoat layer) used in the present invention can be called a color filter.
[0010]
According to the present invention, since the manufacturing process for forming the light emitting element and the manufacturing process for forming the colored layer are performed separately, the yield of the photolithography process for forming the colored layer does not affect the manufacturing process for forming the light emitting element. The advantage is obtained.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention will be described with reference to FIG. In FIG. 1A, reference numeral 11 denotes a substrate on which an element is formed, and any material may be used as long as it is a substrate that transmits visible light. In this specification, in the substrate on which the element is formed, the substrate surface on the side where the TFT or EL element is formed is referred to as a front surface (or front surface side), and the substrate surface on the back side is referred to as a back surface (or back surface side). .
[0012]
Here, a thin film transistor (hereinafter referred to as TFT) 12 is provided as a semiconductor element on the surface side of the substrate 11. The structure of the TFT 12 is not limited, and a top gate TFT (typically a planar TFT) or a bottom gate TFT (typically an inverted staggered TFT) may be used.
[0013]
An anode 13 made of an oxide conductive film is connected to the TFT 12 as a pixel electrode. The oxide conductive film used here is transparent to visible light, and light generated in the light emitting layer passes through the anode 13 and is extracted outside. The TFT 12 and the anode 13 are provided in each of the plurality of pixels.
[0014]
An EL layer 14 is provided in contact with the anode 13, and a cathode 15 is provided thereon. The EL layer 14 is a layer corresponding to the light emitting portion of the EL element, and is formed of a single layer or a laminated structure. Basically, a hole injection layer, a hole transport layer, an electron injection layer, or an electron transport layer are used in combination with the light emitting layer, but any known structure may be used. Further, an organic material or an inorganic material may be used as the material of the EL layer, and in the case of an organic material, a high molecular material or a low molecular material may be used.
[0015]
In addition, a material having a low work function is preferably used for the cathode, and a metal film containing an element belonging to Group 1 or 2 of the periodic table may be used. Of course, any known cathode material may be used.
[0016]
Note that in this specification, an EL element refers to a light-emitting element including an anode, an EL layer, and a cathode. Therefore, the anode 13, the EL layer 14, and the cathode 15 form an EL element 16.
[0017]
The EL element 16 is covered with a sealing material 17, and a cover material 18 is bonded by the sealing material 17. The sealing material 17 is a resin, and typically an ultraviolet curable resin or an epoxy resin is used. The sealing material 17 functions as a protective layer for protecting the EL element 16 from water and oxygen.
[0018]
Further, the cover material 18 functions as a protective layer for protecting the EL element 16 from water and oxygen and at the same time protecting the EL element 16 from mechanical shock. Any material may be used as the cover material 18, but it is preferable to use a plastic substrate because the entire light emitting device can be reduced in weight.
[0019]
All the structures so far are formed on the substrate 11. The substrate 11 provided with the cover material 18 is referred to as an active matrix substrate in this specification.
[0020]
Next, a color filter substrate 19 is prepared separately from the active matrix substrate. As the substrate 19, any material may be used as long as it is a substrate that transmits visible light like the substrate 11. In the present specification, for convenience of explanation, the substrate 19 is referred to as a color filter substrate.
[0021]
The color filter substrate 19 is provided with a colored layer (R) 20a, a colored layer (G) 20b, and a colored layer (B) 20c having a thickness of 0.2 to 1.5 μm. The colored layer is a layer that transmits light of a specific wavelength, and a resin film in which a pigment is dispersed is used. Note that in this specification, the colored layer (R) is a colored layer that transmits red light (light having a peak wavelength near 650 nm), and the colored layer (G) has a peak wavelength near 550 nm. The colored layer (B) refers to a colored layer that transmits blue light (light having a peak wavelength near 450 nm).
[0022]
Further, as the colored layer (R) 20a, the colored layer (G) 20b, and the colored layer (B) 20c, materials used in known color filters may be used. Here, a colored layer (R) 20a that transmits red light, a colored layer (G) 20b that transmits green light, and a colored layer (B) 20c that transmits blue light are provided.
[0023]
Note that the colored layer used in the EL light-emitting device is preferably a low pigment content so that a large amount of light can be secured. It is also possible to increase the amount of light by reducing the thickness of the colored layer. Further, it is not necessary to have a sharp peak wavelength unlike the colored layer used in the liquid crystal display device, but a colored layer having a broad peak wavelength is preferable. In addition, by including a black pigment in the colored layer, it is possible to suppress the inconvenience that external light entering from the outside of the EL light emitting device is absorbed and the observer is reflected on the cathode.
[0024]
The colored layer (R) 20a, the colored layer (G) 20b, and the colored layer (B) 20c thus provided on the color filter substrate 19 are made of the substrate 11 by the resin layer 21 provided as an overcoat layer (or planarization layer). It is glued to the back side. The resin layer 21 is preferably formed with a film thickness of 1 to 3 μm (a film thickness that can flatten a step due to the colored layer). Thus, the state shown in FIG.
[0025]
In FIG. 1A, the color filter substrate 19, the colored layer (R) 20a, the colored layer (G) 20b, the colored layer (B) 20c, and the resin layer 21 are collectively referred to as a color filter.
[0026]
FIG. 1B is an example in which an antireflection film 22 is provided in the color filter in addition to the state of FIG. The antireflection film 22 is a single-layer film or a laminated film that is made to be a condition in which reflected light is hardly generated by adjusting the refractive index and the film thickness, and a known antireflection film may be used. Further, instead of the antireflection film, a circularly polarizing plate (including a circularly polarizing film) may be provided.
[0027]
The light-emitting device described in this embodiment is characterized in that an active matrix substrate and a color filter are formed by separate processes, and both are bonded together after completion. With such a configuration, the yield of the active matrix substrate and the yield of the color filter can be individually managed, and a decrease in the yield of the entire light emitting device can be suppressed.
[0028]
In addition, since the manufacturing process for manufacturing the active matrix substrate and the manufacturing process for manufacturing the color filter can be performed simultaneously, the manufacturing period of the light-emitting device can be shortened.
[0029]
【Example】
[Example 1]
In this embodiment, the case where the present invention is applied to a passive matrix (simple matrix) EL light emitting device will be described. Note that the description of the embodiment may be referred to for the same reference numerals used in FIG.
[0030]
In FIG. 2A, 25 is a glass substrate, and 26 is an anode made of an oxide conductive film. In this embodiment, a compound film of indium oxide and tin oxide is used as the oxide conductive film. The anode 26 is provided with a plurality of rectangular electrodes having a longitudinal direction from the left hand to the right hand on the paper surface in the back direction on the paper surface.
[0031]
A first bank material 27 and a second bank material 28 made of an insulating film are provided on the anode 26. In this embodiment, a silicon oxide film is used as the first bank material 27 and a resin film is used as the second bank material 28. The second bank material 28 can realize the structure shown in FIG. 2A by using a laminated structure of two layers of resin films whose lower layers have a higher etching rate.
[0032]
The first bank material 27 and the second bank material 28 are used as separation walls for insulatingly separating the EL layer 29 and the cathode 30 into a rectangular shape. Therefore, the EL layer 29 and the cathode 30 are rectangular electrodes provided in plural so as to be orthogonal to the anode 26. In this embodiment, as the EL layer 29, a hole injection layer is provided on the anode 26, and a light emitting layer from which white light is obtained is provided thereon. Furthermore, as the cathode 30, an alloy film in which lithium is added to aluminum is used.
[0033]
As described above, the EL element 31 including the anode 26, the EL layer 29, and the cathode 30 is provided on the surface side of the substrate 25. Further, the EL element 31 is protected from external water and oxygen by a sealing material 32 made of an ultraviolet curable resin and a cover material 33 made of glass. In addition, the board | substrate 25 provided to the cover material 33 is called a passive matrix board | substrate in this specification.
[0034]
In this example, the passive matrix light-emitting device illustrated in FIG. 2A is provided by providing the color filter described in the embodiment mode (see FIG. 1A) on the back surface side of the passive matrix substrate described above. can get. The colored layer included in the color filter may contain a black pigment. Further, as shown in FIG. 2B, the color filter may be provided with an antireflection film 22 or a polarizing plate.
[0035]
In the light-emitting device of this example, the passive matrix substrate and the color filter are formed by separate processes, and both are bonded together, thereby suppressing a decrease in yield of the entire light-emitting device. In addition, since a passive matrix substrate and a color filter are manufactured at the same time, a manufacturing period as a light-emitting device is short.
[0036]
[Example 2]
In the light emitting device shown in FIG. 1 or FIG. 2, after the active matrix substrate is completed, the substrate on which the element is formed is polished using a known CMP (Chemical Mechanical Polishing) technique to reduce the thickness of the substrate. Is valid. A light-emitting device of this example is shown in FIGS. In addition, what is necessary is just to refer description of embodiment about the code | symbol same as the code | symbol used in FIG. 1 or FIG.
[0037]
In FIG. 3A, reference numeral 35 denotes a substrate polished by the CMP technique, and other structures are the same as those in FIG. In this embodiment, the thickness of the substrate 35 is set to 300 μm or less (typically 100 to 300 μm) by the CMP technique. Setting the thickness to be equal to or less than the pixel pitch (distance from one pixel to the next pixel) is effective in increasing the directivity of light.
[0038]
FIG. 3B illustrates an example in which this embodiment is applied to a passive matrix light-emitting device. In this case, the structure is the same as that of FIG. 2B except that the substrate on which the EL element 31 is formed is polished by the CMP technique to form the substrate 36.
[0039]
When this embodiment is implemented, in addition to the effects of the present invention, the light-emitting device can be made thinner and lighter by thinning the substrate on which the element is formed.
[0040]
Example 3
In this embodiment, an example in which a plastic film (a film made of a polymer material) is used as a color filter substrate in the light emitting device shown in FIG. 1 or FIG. The light-emitting device of this example is shown in FIGS. In addition, what is necessary is just to refer description of embodiment about the code | symbol same as the code | symbol used in FIG. 1 or FIG.
[0041]
In FIG. 4A, the color filter film 40 is a film made of a polymer material (plastic film), and protective films 41a and 41b are provided on both surfaces (front and back surfaces). In this embodiment, a plastic film is taken as an example, but a hard plastic substrate may be used.
[0042]
In addition, as the protective films 41a and 41b, it is preferable to provide an insulating film that does not or does not easily transmit water or oxygen. Typically, a carbon film, preferably a diamond-like carbon (DLC) film is used. Since the DLC film can be formed in a temperature range from room temperature to 100 ° C., it can be easily formed even on a plastic film having low heat resistance. In addition, when a film is formed on a flexible plastic film, the film may be formed by a roll-to-roll method.
[0043]
FIG. 4B shows an example in which this embodiment is applied to a passive matrix light-emitting device. In this case, the structure is the same as that shown in FIG. 2B except that a color filter using a color filter film 40 provided with protective films 41a and 41b is bonded to the substrate on which the EL element 31 is formed.
[0044]
When this embodiment is implemented, in addition to the effects of the present invention, the weight of the color filter can be reduced, so that the light emitting device as a whole can be reduced in weight. Further, by using a plastic film provided with a protective film on both sides as the cover member 18, a flexible light-emitting device can be manufactured.
[0045]
Example 4
In this example, a specific method for manufacturing a light-emitting device will be described with reference to FIGS. Here, a method for simultaneously manufacturing a pixel portion and a TFT of a driver circuit provided around the pixel portion will be described. However, in order to simplify the explanation, a CMOS circuit which is a basic unit with respect to the drive circuit is illustrated.
[0046]
First, as shown in FIG. 5A, a base film 302 is formed to a thickness of 300 nm over a glass substrate 301. In this embodiment, a silicon nitride oxide film is stacked as the base film 302. At this time, the nitrogen concentration in contact with the glass substrate 301 is preferably set to 10 to 25 wt%.
[0047]
In addition, it is effective to provide the base film 302 with a heat dissipation effect, and it is effective to provide a carbon film, particularly a DLC (diamond-like carbon) film, on both surfaces or one surface of the substrate 301. The DLC film can be formed by a CVD method or a sputtering method, and has an advantage that it can be formed in a temperature range from room temperature to 100 ° C. or less.
[0048]
Next, an amorphous silicon film (not shown) having a thickness of 50 nm is formed on the base film 302 by a known film formation method. Note that the semiconductor film is not limited to an amorphous silicon film, and any semiconductor film including an amorphous structure (including a microcrystalline semiconductor film) may be used. Further, a compound semiconductor film including an amorphous structure such as an amorphous silicon germanium film may be used. The film thickness may be 20 to 100 nm.
[0049]
Then, the amorphous silicon film is crystallized by the technique described in Japanese Patent Laid-Open No. 7-130652 to form a crystalline silicon film (also referred to as a polycrystalline silicon film or a polysilicon film) 303. In this embodiment, nickel is used as an element that promotes crystallization. Of course, as another crystallization method, a laser annealing crystallization method using laser light or a lamp annealing crystallization method using infrared light may be used.
[0050]
Next, as illustrated in FIG. 5B, the crystalline silicon film 303 is etched by a first photolithography process to form island-shaped semiconductor films 304 to 307. These are semiconductor films that later become active layers of the TFT.
[0051]
Here, in this embodiment, a protective film (not shown) made of a silicon oxide film is formed on the semiconductor films 304 to 307 to a thickness of 130 nm, and the semiconductor element is an impurity element (hereinafter referred to as a p-type impurity). Element) is added to the semiconductor films 304 to 307. As the p-type impurity element, an element belonging to Group 13 of the periodic table (typically boron or gallium) can be used. This protective film is provided in order to prevent the crystalline silicon film from being directly exposed to plasma when impurities are added and to enable fine concentration control.
[0052]
The concentration of the p-type impurity element added at this time is 1 × 10 15 ~ 5x10 17 atoms / cm Three (Typically 1x10 16 ~ 1x10 17 atoms / cm Three ). The p-type impurity element added at this concentration is used to adjust the threshold voltage of the n-channel TFT.
[0053]
Next, a gate insulating film 308 is formed so as to cover the semiconductor films 304 to 307. As the gate insulating film 308, an insulating film containing silicon with a thickness of 10 to 200 nm, preferably 50 to 150 nm may be used. This may be a single layer structure or a laminated structure. In this embodiment, a silicon nitride oxide film having a thickness of 115 nm is used.
[0054]
Next, a tantalum nitride film with a thickness of 30 nm is formed as the first conductive film 309, and a tungsten film with a thickness of 370 nm is formed as the second conductive film 310. These metal films may be formed by sputtering. Further, when an inert gas such as Xe or Ne is added as a sputtering gas, peeling of the film due to stress can be prevented. Further, by setting the purity of the tungsten target to 99.9999%, a low resistance tungsten film having a resistivity of 20 mΩcm or less can be formed.
[0055]
Next, resist masks 311a to 311g are formed, and the first conductive film 309 and the second conductive film 310 are etched. Note that in this specification, the etching process performed here is referred to as a first etching process.
[0056]
In this embodiment, an etching method using ICP (Inductively Coupled Plasma) is employed. Etching gas is carbon tetrafluoride (CF Four ) Gas and chlorine (Cl 2 ) A gas mixed gas is used and a film forming pressure is set to 1 Pa. In this state, 500 W RF power (13.56 MHz) is applied to the coil-type electrode to generate plasma. Further, 150 W RF power (13.56 MHz) is applied as a self-bias voltage to the stage on which the substrate is placed, so that a negative self-bias is applied to the substrate.
[0057]
When the etching process is performed under such conditions, the selectivity between the tantalum nitride film and the tungsten film is close to 1: 1, and etching can be performed in a lump. Further, by using the receding of the resist masks 311a to 311e, a tapered shape having a taper angle of 15 to 45 ° can be obtained. Under the etching conditions of this embodiment, a taper angle of about 25 ° can be obtained.
[0058]
Thus, the gate electrodes 312 to 316 made of a laminated film of the first conductive film and the second conductive film, and the source wiring 317 and the drain wiring 318 of the switching TFT are formed. The drain wiring 318 also serves as the gate electrode of the current control TFT.
[0059]
Next, an n-type impurity element (phosphorus in this embodiment) is added in a self-aligning manner using the gate electrodes 312 to 316, the source wiring 317, and the drain wiring 318 as masks. In the impurity regions 319 to 327 thus formed, an n-type impurity element is 1 × 10 20 ~ 1x10 twenty one atoms / cm Three (Typically 2 × 10 20 ~ 5x10 twenty one atoms / cm Three ). These impurity regions 319 to 327 form the source region and drain region of the n-channel TFT. (Fig. 5 (C))
[0060]
Next, the gate electrode is etched using the resist masks 311a to 311g as they are. The etching conditions at this time may be the same as the first etching process. Here, the tapered portion of the gate electrode is retracted to form gate electrodes 328 to 332, a source wiring 333, and a drain wiring 334, which are thinner than those in FIG. (Fig. 5 (D))
[0061]
Further, as shown in FIG. 5E, the second conductive film (tungsten film) is selectively etched using the resist masks 311a to 311g as they are. The etching condition may be that oxygen gas is mixed as an etching gas with respect to the first etching process. In this specification, the etching process performed here is referred to as a second etching process. This is because the progress of etching of the first conductive film (tantalum nitride film) is extremely slowed by adding oxygen to the etching gas.
[0062]
At this time, gate electrodes 335 to 339 having a stacked structure of the first gate electrodes 335a to 339a and the second gate electrodes 335b to 339b are formed, and the first source wiring 340a and the second source wiring 340b are further formed. A source wiring 340 having a laminated structure and a drain wiring 341 having a laminated structure of a first drain wiring 341a and a second drain wiring 341b are formed.
[0063]
Next, the resist masks 311a to 311g are removed, and an n-type impurity element (phosphorus in this embodiment) is added as shown in FIG. In this step, n-type impurity elements are 2 × 10 2 in the n-type impurity regions 342 to 351. 16 ~ 5x10 19 atoms / cm Three (Typically 5 × 10 17 ~ 5x10 18 atoms / cm Three ) To be included at a concentration of In this specification, an impurity region to which an n-type impurity element is added at this concentration is referred to as an n-type impurity region (b).
[0064]
At the same time, n-type impurity regions 352 to 361 are also formed. Since these impurity regions are formed of an n-type impurity element penetrating the first gate electrodes 335a to 339a, 1/2 to 1/10 of the n-type impurity regions 342 to 351 (typically 1/3). Phosphorus is added at a concentration of ~ 1/4). Specifically, 1 × 10 16 ~ 5x10 18 atoms / cm Three (Typically 3x10 17 ~ 3x10 18 atoms / cm Three ) Containing an n-type impurity element. In this specification, an impurity region to which an n-type impurity element is added at this concentration is referred to as an n-type impurity region (c).
[0065]
Further, since the n-type impurity element needs to be added through the first gate electrodes 335a to 339a and the gate insulating film 308, the acceleration voltage is set to a high value of 70 to 120 kV (90 kV in this embodiment).
[0066]
Next, as illustrated in FIG. 6B, a resist mask 362 is formed. Then, a p-type impurity element (boron in this embodiment) is added to form impurity regions 363 to 366 containing boron at a high concentration. Here, diborane (B 2 H 6 3 × 10 by ion doping method using 20 ~ 3x10 twenty one atoms / cm Three (Typically 5 × 10 20 ~ 1x10 twenty one atoms / cm Three Boron is added so that the concentration of The acceleration voltage may be 20-30 kV. In this specification, an impurity region to which a p-type impurity element is added at this concentration is referred to as a p-type impurity region (a).
[0067]
The p-type impurity regions (a) 363 to 366 are already 1 × 10 20 ~ 1x10 twenty one atoms / cm Three In this case, the boron added here is added at a concentration at least three times that of phosphorus. Therefore, the n-type impurity region formed in advance is completely inverted to the P-type and functions as a P-type impurity region.
[0068]
Next, after removing the resist mask 362, the n-type or p-type impurity element added at each concentration is activated. As an activation means, a furnace annealing method is used. In this embodiment, heat treatment is performed in an electric furnace in a nitrogen atmosphere at 550 ° C. for 4 hours. At this time, it is desirable to keep the oxygen concentration in the nitrogen atmosphere as low as possible. This is to prevent oxidation of the gate electrode, and preferably the oxygen concentration is 1 ppm or less.
[0069]
At this time, nickel used for crystallization of the amorphous silicon film is in the direction of the arrow in the region to which the n-type impurity element is added, that is, in the n-type impurity region or the p-type impurity region containing the n-type impurity element. Move and gettered. That is, the nickel concentration in the TFT channel formation regions 367 to 371 is greatly reduced, and at least 1 × 10 16 atoms / cm Three The following (however, this value is the measurement lower limit of mass secondary ion analysis).
[0070]
Further, as shown in FIG. 6D, a protective film 372 made of a silicon nitride film or a silicon nitride oxide film is formed. Thereafter, heat treatment is performed in a temperature range of 300 to 450 ° C. in a nitrogen atmosphere to perform hydrogenation. This step is a step in which dangling bonds of the semiconductor are hydrogen-terminated by thermally excited hydrogen. In this process, hydrogen contained in the protective film 372 is diffused to perform a hydrogenation process. As another method, a known plasma hydrogenation treatment may be performed.
[0071]
Moreover, it is also possible to perform a hydrogenation treatment by performing a heat treatment at 300 to 450 ° C. for 1 to 12 hours in an atmosphere containing 3 to 100% hydrogen.
[0072]
When the hydrogenation process is completed, a resin film is formed to a thickness of 1 to 2 μm as the interlayer insulating film 373. As the resin material, polyimide, polyamide, acrylic resin, or BCB (benzocyclobutene) may be used. It is also possible to use a photosensitive resin.
[0073]
Note that the CF with respect to the surface of the interlayer insulating film 373 Four It is effective to perform plasma treatment using a gas. By this treatment, the adhesion of the wiring to be formed next can be improved.
[0074]
Next, as shown in FIG. 7A, contact holes are formed in the interlayer insulating film 373, and wirings 374 to 380 are formed. In this embodiment, the wiring is a laminated film having a three-layer structure in which a 50 nm titanium film, an aluminum film containing 400 nm titanium, and a 100 nm titanium film are continuously formed by sputtering. Of course, other conductive films may be used.
[0075]
At this time, the wirings 374 and 376 function as source wirings of the CMOS circuit, and 375 functions as a drain wiring. The wiring 377 functions as a wiring that electrically connects the source wiring 340 and the source region of the switching TFT, and the wiring 378 functions as a wiring that electrically connects the drain wiring 341 and the drain region of the switching TFT.
[0076]
Next, a pixel electrode 381 made of an oxide conductive film that is transparent to visible light is formed. In this embodiment, an oxide conductive film obtained by adding gallium oxide to zinc oxide is used as the pixel electrode 381, and the film thickness is 120 nm. In addition, an oxide conductive film formed using indium oxide, zinc oxide, tin oxide, or a combination thereof can be used.
[0077]
Next, a bank 382 is formed as shown in FIG. The bank 382 may be formed by patterning an insulating film or organic resin film containing silicon of 100 to 400 nm. The bank 382 is formed so as to fill a space between the pixels (between the pixel electrode and the pixel electrode). Another purpose is to prevent an organic EL material such as a light emitting layer to be formed next from directly touching an end portion of the pixel electrode 381. In other words, it can be said that the insulating film has an opening on the flat surface of the pixel electrode 383.
[0078]
Note that since the bank 382 is an insulating film, attention must be paid to electrostatic breakdown of elements during film formation. In this embodiment, carbon particles or pigments are added to the insulating film that is the material of the bank 382 to lower the resistivity and suppress the generation of static electricity. At this time, the resistivity is 1 × 10 6 ~ 1x10 12 Ωm (preferably 1 × 10 8 ~ 1x10 Ten The added amount of carbon particles and pigment may be adjusted so that the resistance becomes Ωm.
[0079]
Here, pretreatment is performed on the surface of the pixel electrode 381. In this embodiment, the entire substrate is heated to 100 to 120 ° C., and ultraviolet light irradiation is performed while forming oxygen plasma. Thereby, ozone plasma treatment can be performed on the anode surface. By this pretreatment, adsorbed oxygen and adsorbed water are removed from the surface of the anode 381, and the work function of the surface is increased. Furthermore, the flatness of the anode surface is improved. The flatness of the anode surface may be such that the mean square roughness (Rms) of the surface is 5 nm or less (preferably 3 nm or less).
[0080]
Note that plasma treatment using a rare gas such as argon, neon, or helium may be used instead of the ozone plasma treatment.
[0081]
Next, the EL layer 383 is formed by a spin coating method. In this embodiment, the stacked body of the hole injection layer and the light emitting layer is called an EL layer. That is, a laminate in which a hole injection layer, a hole transport layer, a hole blocking layer, an electron transport layer, an electron injection layer, or an electron blocking layer are combined with the light emitting layer is defined as an EL layer. Note that these may be organic materials or inorganic materials, and may be polymers or low molecules.
[0082]
In this embodiment, first, polythiophene (PEDOT) is formed to a thickness of 20 nm as a hole injection layer, and polyvinylcarbazole (PVK) is formed to a thickness of 80 nm as a light emitting layer that emits white light. Polythiophene may be applied by dissolving in water, and polyvinylcarbazole may be applied by dissolving in 1,2-dichloromethane. In addition, after the hole injection layer and the light emitting layer are applied, heat treatment is performed in a temperature range (typically 80 to 120 ° C.) that does not break the EL layer, and the solvent is volatilized to obtain a thin film.
[0083]
For example, 1,2-dichloromethane, PVK, Bu-PBD (2- (4′-tert-butylphenyl) -5- (4 ″ -biphenyl) -1,3,4-oxadiazole), coumarin 6 , DCM1 (4-dicyanomethylene-2-methyl-6-p-dimethylaminostyryl-4H-pyran), TPB (tetraphenylbutadiene) and Nile Red may be used.
[0084]
In addition, as a polymer material that can be used as a light-emitting layer that emits white light, other materials described in JP-A-8-96959 or JP-A-9-63770 can be used.
[0085]
Next, after the EL layer 383 is formed, a cathode 384 made of a conductive film having a low work function is formed to a thickness of 400 nm. In this embodiment, aluminum and lithium are alloyed by co-evaporation. Thus, an EL element 385 including the pixel electrode (anode) 381, the EL layer 383, and the cathode 384 is formed.
[0086]
Note that it is effective to provide the passivation film 386 so as to completely cover the EL element 385 after the cathode 384 is formed. At this time, a film with good coverage is preferably used as the passivation film 386, and it is effective to use a carbon film, particularly a DLC film. Since the DLC film can be formed in a temperature range from room temperature to 100 ° C., it can be easily formed over the EL layer 383 having low heat resistance. In addition, the blocking effect against oxygen is high, and the oxidation of the EL layer 383 and the cathode 384 can be suppressed.
[0087]
Further, a sealing material 387 is provided over the passivation film 386 and a cover material 388 is attached thereto. As the sealing material 387, an ultraviolet curable resin may be used, and it is effective to provide a substance having a moisture absorption effect or a substance having an antioxidant effect inside. Further, the ultraviolet curable resin can be used as an adhesive.
[0088]
As the cover material 388, a glass substrate, a metal substrate, a ceramic substrate, or a plastic substrate (including a plastic film) can be used. It is effective to provide a carbon film, particularly a DLC film, on both sides or one side of the cover material 388. In addition, what is necessary is just to form a DLC film on both surfaces by a roll to roll system, when using a plastic film as a cover material.
[0089]
In this way, the state of FIG. Note that it is effective to continuously process the steps from the formation of the bank 382 to the formation of the passivation film 386 using a multi-chamber type (or in-line type) film formation apparatus without releasing to the atmosphere. . However, when the EL layer is formed by a spin coating method, the treatment may be performed in a nitrogen atmosphere or a rare gas atmosphere subjected to deoxidation treatment.
[0090]
Next, a glass substrate 390 is prepared for a color filter, and a colored layer (R) 391a, a colored layer (B) 391b, and a colored layer (G) (not shown) are formed thereon. At this time, the colored layer (R) 391a and the colored layer (B) 391b are overlapped at a portion indicated by 392. This overlapping portion 392 functions as a light shielding portion and is effective in clarifying the contour between pixels.
[0091]
Then, a resin layer 393 for flattening a step due to the colored layer (R) 391a, the colored layer (B) 391b, and the colored layer (G) (not shown) is provided to complete the color filter. Further, a color filter is bonded to the back side of the substrate 301 using the resin layer 393. Thus, the EL light emitting device shown in FIG. 8 is completed.
[0092]
Here, each TFT will be described. The drive circuit is formed with a CMOS circuit in which a p-channel TFT 401 and an n-channel TFT 402 are combined in a complementary manner as a basic unit. Note that the driving circuit here includes a shift register, a buffer, a level shifter, a latch, a sampling circuit (including a transfer gate), a D / A converter, or the like.
[0093]
The active layer of the p-channel TFT 401 includes a source region 411, a drain region 412, and a channel formation region 413. At this time, the source region 411 and the drain region 412 overlap with the first gate electrode 335a with the gate insulating film 308 interposed therebetween.
[0094]
The active layer of the n-channel TFT 402 includes a source region 414, a drain region 415, n-type impurity regions (b) 416 and 417, n-type impurity regions (c) 418 and 419, and a channel formation region 420. At this time, the n-type impurity regions (b) 416 and 417 are provided so as not to overlap with the first gate electrode 336a with the gate insulating film 308 interposed therebetween, and the n-type impurity regions (c) 418 and 419 are provided. The gate insulating film 308 is provided so as to overlap the first gate electrode 336a. Note that the n-type impurity regions (c) 418 and 419 provided so as to overlap with the first gate electrode 336a have an effect of suppressing hot carrier injection, and effectively suppress a deterioration phenomenon caused by hot carrier injection. can do.
[0095]
A switching TFT 403 and a current control TFT 404 are formed in the pixel portion. Note that the drain of the switching TFT 403 is electrically connected to the gate of the current control TFT 404, and the switching operation of the current control TFT 404 is controlled via the switching TFT 403. The amount of current flowing through the EL element is controlled by the current control TFT 404.
[0096]
The active layer of the switching TFT 403 includes a source region 421, a drain region 422, n-type impurity regions (b) 423 to 426, n-type impurity regions (c) 427 to 430, an isolation region 431, and channel formation regions 432 and 433. The source region 421 is connected to the source wiring 340 through the wiring 379. Further, the drain region 422 is connected to the drain wiring 341 through the wiring 380. The drain wiring 341 is connected to the gate electrode 339 of the current control TFT 404.
[0097]
The structure of the switching TFT 403 is basically the same as that of the n-channel TFT 402 so that the n-type impurity regions (b) 423 to 426 do not overlap the first gate electrodes 337a and 338a with the gate insulating film 308 interposed therebetween. The n-type impurity regions (c) 427 to 430 are provided so as to overlap the first gate electrodes 337a and 338a with the gate insulating film 308 interposed therebetween. That is, the structure is strong against hot carrier deterioration.
[0098]
Note that although an example in which an n-channel TFT is used as the switching TFT 403 is described in this embodiment, a p-channel TFT may be used.
[0099]
The active layer of the current control TFT 404 includes a source region 434, a drain region 435, and a channel formation region 436. The structure of the current control TFT 404 is basically the same as that of the p-channel TFT 401, and the source region 434 and the drain region 435 overlap with the first gate electrode 339a with the gate insulating film 308 interposed therebetween. In this embodiment, an example in which a p-channel TFT is used as the current control TFT 404 is shown, but an n-channel TFT may be used.
[0100]
FIG. 9 shows a view of the pixel portion from above. Further, in FIG. 9, a cross-sectional view cut along AA ′ is shown in FIG. 10 (A), a cross-sectional view cut along BB ′ is shown in FIG. 10 (B), and a cross-sectional view cut along CC ′ is shown. As shown in FIG. 10A shows a cross-sectional structure of the switching TFT 403, FIG. 10B shows a cross-sectional structure of the current control TFT 404, and FIG. 10C shows a cross-sectional structure of the storage capacitor. The pixel portion shown here can be formed by the manufacturing steps shown in FIGS. 5 to 8, and the reference numerals used in FIGS. 5 to 8 are referred to as necessary.
[0101]
First, the switching TFT 403 will be described with reference to FIGS. 9 and 10A. 9 and 10A, reference numeral 601 denotes an active layer. The details of the active layer 601 are as described with reference to FIG. The source wiring 340 is electrically connected to the active layer 601 via the wiring 377 and further electrically connected to the drain wiring 341 via the wiring 378.
[0102]
A gate electrode 602 is provided on the active layer 601. Note that portions of the gate electrode 602 that overlap with the active layer 601 correspond to the gate electrodes 337 and 338 in FIG. The gate electrode 602 is electrically connected to the gate wiring 604 through a contact portion 603.
[0103]
Next, the current control TFT 404 will be described with reference to FIGS. 9 and 10B. 9 and 10B, reference numeral 605 denotes an active layer. The details of the active layer 605 are as described with reference to FIG. A source region of the active layer 605 is electrically connected to a wiring (current supply line) 379 and a drain region is electrically connected to the wiring 380 and a pixel electrode (EL element anode) 381.
[0104]
A gate electrode 339 is provided over the active layer 605. The gate electrode 339 corresponds to a portion where the drain wiring 341 overlaps with the active layer 605. Further, the drain wiring 341 is extended as it is and also serves as the upper electrode 606 of the storage capacitor shown in FIG. A wiring (current supply line) 379 is electrically connected to the semiconductor film 608 through a contact portion 607, and the semiconductor film 608 functions as a lower electrode of a storage capacitor.
[0105]
FIG. 11 shows a circuit configuration example of the EL light emitting device of this embodiment. In this embodiment, a circuit configuration for performing digital driving is shown. In this embodiment, a source side driver circuit 801, a pixel portion 808, and a gate side driver circuit 809 are provided. Note that in this specification, a drive circuit portion is a generic name including a source side drive circuit and a gate side drive circuit.
[0106]
In this embodiment, an n-channel TFT having the structure shown in FIG. 7B is provided as a switching TFT in the pixel portion 808, and the switching TFT includes a gate wiring connected to a gate side driver circuit 809 and a source side driver circuit 801. It is arranged at the intersection with the source wiring connected to. The drain of the switching TFT is electrically connected to the gate of the p-channel type current control TFT.
[0107]
The source side driver circuit 801 includes a shift register 802, a buffer 803, a latch (A) 804, a buffer 805, a latch (B) 806, and a buffer 807. In the case of analog driving, a sampling circuit (transfer gate) may be provided instead of the latches (A) and (B). The gate driver circuit 809 includes a shift register 810 and a buffer 811.
[0108]
Although not shown, a gate side driver circuit may be further provided on the opposite side of the gate side driver circuit 809 with the pixel portion 808 interposed therebetween. In this case, both have the same structure and share the gate wiring, and even if one of them breaks, the gate signal is sent from the remaining one so that the pixel portion operates normally.
[0109]
Note that the above configuration can be easily realized by manufacturing a TFT in accordance with the manufacturing steps shown in FIGS. In addition, in this embodiment, only the configuration of the pixel portion and the drive circuit portion is shown. However, according to the manufacturing process of this embodiment, other logic such as a signal dividing circuit, a D / A converter, an operational amplifier, and a γ correction circuit are provided. It is considered that a circuit can be formed on the same substrate, and further, a memory, a microprocessor, and the like can be formed.
[0110]
Further, the EL light-emitting device of this example after performing the sealing (or sealing) process for protecting the EL element will be described with reference to 12 (A) and (B). In addition, the code | symbol used in FIG. 11 is quoted as needed.
[0111]
FIG. 12A is a top view illustrating a state where the EL element is sealed. Reference numeral 801 indicated by a dotted line denotes a source side driver circuit, 808 denotes a pixel portion, and 809 denotes a gate side driver circuit. Further, reference numeral 901 is a cover material, 902 is a first seal material, 903 is a second seal material, and the inner cover material 901 surrounded by the first seal material 902 is disposed between the EL element and the substrate. A sealing material (not shown) is provided.
[0112]
Note that reference numeral 904 denotes a connection wiring for transmitting a signal input to the source side driver circuit 801 and the gate side driver circuit 809, and receives a video signal and a clock signal from the FPC 905 serving as an external input terminal.
[0113]
Here, FIG. 12B shows a cross-sectional view corresponding to a cross section of FIG. 12A taken along line AA ′. In FIGS. 12A and 12B, the same reference numerals are used for the same parts.
[0114]
As shown in FIG. 12B, a pixel portion 808 and a gate side driver circuit 809 are formed over a glass substrate 906, and the pixel portion 808 is a pixel electrode electrically connected to the current control TFT 404 and its drain. 381 including a plurality of pixels. The gate side driver circuit 809 is formed using a CMOS circuit in which a p-channel TFT 401 and an n-channel TFT 402 are complementarily combined.
[0115]
The pixel electrode 381 functions as an anode of the EL element. A bank 382 is formed at both ends of the pixel electrode 381, and an EL layer 383 and a cathode 384 of the EL element are formed on the pixel electrode 381. The cathode 384 also functions as a wiring common to all pixels, and is electrically connected to the FPC 905 through the connection wiring 904. Further, all elements included in the pixel portion 808 and the gate side driver circuit 809 are covered with a cathode 384.
[0116]
Further, a cover material 901 is bonded to the first seal material 902. At this time, a spacer made of a resin film may be provided in order to secure a space between the cover material 901 and the EL element. A sealing material 907 is filled inside the first sealing material 902. Note that a photocurable resin is preferably used as the first sealant 902 and the sealant 907. The first sealing material 902 is desirably a material that does not transmit moisture and oxygen as much as possible. Further, a substance having a hygroscopic effect or a substance having an antioxidant effect may be contained in the sealing material 907.
[0117]
The sealing material 907 provided so as to cover the EL element also functions as an adhesive for bonding the cover material 901. As the sealing material 907, polyimide, acrylic, PVC (polyvinyl chloride), epoxy resin, silicone resin, PVB (polyvinyl butyral), or EVA (ethylene vinyl acetate) can be used.
[0118]
In this embodiment, as the cover material 901, a glass plate, quartz plate, plastic plate, ceramic plate, FRP (Fiberglass-Reinforced Plastics) plate, PVF (polyvinyl fluoride) film, mylar film, polyester film or acrylic film is used. Can be used.
[0119]
Furthermore, in this embodiment, carbon films (specifically, DLC films) 908a and 908b are provided on both surfaces of the cover material 901 in a thickness of 2 to 30 nm. Such a carbon film has a role of preventing oxygen and water from entering and mechanically protecting the surface of the cover material 901. Of course, a polarizing plate (typically a circularly polarizing plate) can be attached to the outer carbon film 908a.
[0120]
In addition, after the cover material 901 is bonded using the sealing material 907, the second sealing material 903 is provided so as to cover the side surface (exposed surface) of the sealing material 907. The second sealing material 903 can use the same material as the first sealing material 902.
[0121]
By encapsulating the EL element in the sealing material 907 with the above structure, the EL element can be completely shut off from the outside, and a substance that promotes deterioration due to oxidation of the EL layer such as moisture or oxygen enters from the outside. Can be prevented. Therefore, a highly reliable EL light-emitting device can be manufactured.
[0122]
Example 5
In this embodiment, an example of the arrangement of the colored layers will be described with reference to FIG. FIG. 14 shows a top view of the pixel portion, and the structure of each pixel is the same as that described with reference to FIGS. 9 and 10A to 10C.
[0123]
In FIG. 14, 1101 is a colored layer (R), 1102 is a colored layer (G), and 1103 is a colored layer (B). Reference numeral 1104 denotes a pixel that develops red, 1105 denotes a pixel that develops green, and 1106 denotes a pixel that develops blue. In this embodiment, a colored layer (R) 1101 is provided for the pixel 1104 that develops red, a colored layer (G) 1102 is provided for the pixel 1105 that develops green, and a colored layer (G) is provided for the pixel 1106 that develops blue. B) 1103 is provided.
[0124]
In addition, the colored layer (R) 1101, the colored layer (G) 1102, and the colored layer (B) 1103 overlap above the source wiring 1107 and the current supply line 1108, respectively, to form light shielding portions 1109a to 1109d and 1110. Thus, each pixel has a structure surrounded by the light shielding portions 1109a to 1109d and 1110, and light reaching the light shielding portions 1109a to 1109d and 1110 among the light emission generated by each pixel is absorbed. That is, it is possible to effectively suppress color mixing between adjacent pixels.
[0125]
In addition, it is effective that each colored layer contains a black pigment or carbon particles. As a result, light from the outside is absorbed, so that a problem that a person who observes an image is reflected on the cathode made of the metal film can be reduced. However, if the content is too large, the amount of luminescence itself is also lowered, so it is desirable to add 1 to 10%.
[0126]
Note that this embodiment may be combined with the EL light-emitting device described in the embodiment of the present invention, and can be implemented by freely combining with any structure of Embodiments 1 to 4.
[0127]
Example 6
In the embodiment of the invention and Example 4, an EL material capable of obtaining white light emission is used as the light emitting layer included in the EL layer, and the white light emitted therefrom is used as a colored layer (R), a colored layer (G) or An example in which red light, green light, or blue light is obtained by passing through the colored layer (B) is shown.
[0128]
In this embodiment, a light emitting layer capable of obtaining red light emission is formed for a pixel that develops red color, a light emitting layer that obtains green light emission is formed for a pixel that develops green color, and blue light emission is provided for a pixel that develops blue color. Is formed. And color purity is improved by letting red light, green light, or blue light radiated | emitted from each light emitting layer pass through a colored layer (R), a colored layer (G), or a colored layer (B), respectively.
[0129]
In the case of this embodiment, it is necessary to form three types of EL materials capable of obtaining red, green, or blue light emission, but known materials can be used. In addition, since it is necessary to form a film separately for each pixel, if a low molecular EL material is formed by an evaporation method using a shadow mask, or a high molecular EL material is formed by an inkjet method or a printing method, good.
[0130]
Note that the configuration of this example can be implemented by freely combining with any of the configurations of the embodiment of the invention and Examples 1 to 5. In addition, as shown in Example 5, it is effective that each colored layer contains a black pigment or carbon particles.
[0131]
Example 7
In this embodiment, an example is shown in which an EL material that can emit blue or blue-green light is used as a light-emitting layer, and the light is passed through a color conversion layer to obtain red light, green light, or blue light.
[0132]
In the case of this embodiment, a color conversion layer that converts blue light into red light is formed for pixels that develop red, and a color conversion layer that converts blue light into green light is formed for pixels that develop green. A known layer may be used for this color conversion layer. Blue light emitted from the light emitting layer excites the color conversion layer to generate red light or green light.
[0133]
The color purity is obtained by passing the red light, green light and blue light emitted from the light emitting layer through the colored layer (R), colored layer (G) or colored layer (B), respectively. Improve.
[0134]
In this embodiment, since only a light emitting layer capable of obtaining blue or blue-green light emission may be formed as a light emitting layer, it is preferable to form a film by a simple technique such as a spin coating method or a printing method. Of course, it is also possible to form a film by an evaporation method.
[0135]
Note that the configuration of this example can be implemented by freely combining with any of the configurations of the embodiment of the invention and Examples 1 to 5. In addition, as shown in Example 5, it is effective that each colored layer contains a black pigment or carbon particles.
[0136]
Example 8
In this embodiment, an EL light-emitting device having a pixel portion having a structure different from that in Embodiment 4 is shown. The TFT structure and the EL element structure are substantially the same as those in Example 4 except that layers in which various wirings (gate wiring, source wiring, drain wiring, current supply line, etc.) are formed are different. Therefore, for the same parts as those in the fourth embodiment, the reference numerals used in FIGS. 9 and 10A to 10C are cited.
[0137]
Here, FIG. 15 shows a view of the pixel portion from above. Further, in FIG. 15, a cross-sectional view cut along AA ′ is shown in FIG. 16A, a cross-sectional view cut along BB ′ is shown in FIG. 16B, and a cross-sectional view cut along CC ′ is shown. As shown in FIG. 16A shows the cross-sectional structure of the switching TFT, FIG. 16B shows the cross-sectional structure of the current control TFT, and FIG. 16C shows the cross-sectional structure of the storage capacitor. The pixel portion shown here can be formed with reference to the manufacturing steps shown in FIGS.
[0138]
First, the switching TFT will be described with reference to FIGS. 15 and 16A. In FIGS. 15 and 16A, reference numeral 1201 denotes an active layer. The details of the active layer 1201 are the same as those of the switching TFT described with reference to FIG. A gate wiring 1202 overlaps on the active layer 1201 and functions as a gate electrode. A source wiring 1203 and a drain wiring 1204 are connected to the active layer 1201, and the drain wiring 1203 is connected to the gate wiring 1205 of the current control TFT.
[0139]
Next, the current control TFT will be described with reference to FIGS. 15 and 16B. Although the current control TFT has a structure in which two TFTs are connected in parallel, only one of them will be described here. 15 and 16B, reference numeral 1206 denotes an active layer. The details of the active layer 1206 are the same as those of the current control TFT described with reference to FIG. The source region of the active layer 1206 is connected to the current supply line 1207, and the drain region is electrically connected to the pixel electrode (anode of the EL element) 1209 through the drain wiring 1208.
[0140]
Further, the gate wiring 1205 of the current control TFT also serves as the upper electrode 1211 of the storage capacitor 1210 shown in FIG. 16C immediately below the current supply line 1207. At this time, the current supply line 1207 is electrically connected to the semiconductor film 1212, and the semiconductor film 1212 functions as a lower electrode of the storage capacitor 1210. With the structure of this embodiment, since the storage capacitor 1210 is completely hidden under the current supply line 1207, the effective light emission area of the pixel is not reduced.
[0141]
Next, the erase TFT will be described. In the pixel of this embodiment, an erasing TFT 1213 having the same structure as the switching TFT is provided. The active layer 1214 of the erase TFT 1213 has a source region connected to the current supply line 1207 and a drain region electrically connected to the gate wiring 1205 of the current control TFT via the drain wiring 1215. Note that since the structure of the active layer 1214 is the same as that of the switching TFT, description thereof is omitted here.
[0142]
An erase TFT gate wiring (hereinafter referred to as erase gate wiring) 1216 is provided in parallel with the switching TFT gate wiring 1202.
[0143]
When a signal for turning on the erase TFT 1213 is input to the erase gate wiring 1216, the gate wiring 1205 of the current control TFT is forcibly set to the same potential as the current supply line 1207. That is, since the current control TFT is turned off, no current is supplied to the EL element 385, light emission stops, and the pixel is turned off.
[0144]
Thus, by providing the erasing TFT 1213, the pixel can be forcibly turned off, and the controllability of the pixel lighting time is improved. That is, the number of gradations can be easily increased in the time gradation type image display. Note that Japanese Patent Application No. 11-338786 may be cited for an EL light emitting device using such an erasing TFT.
[0145]
In addition, the configuration of this example can be implemented by freely combining with any of the configurations of the embodiment of the invention, Example 2, Example 3, or Examples 5 to 7.
[0146]
Example 9
In this example, an example of manufacturing an EL light-emitting device in a manufacturing process different from that of Example 4 will be described with reference to FIGS. In addition, since Example 4 is different from Example 4 in the middle, the reference numerals used in Example 4 are referred to as necessary.
[0147]
First, according to the manufacturing process of Example 4, the process up to the process of FIG. However, in this embodiment, the step of adding the n-type impurity element shown in FIG. 5C is omitted. In this way, the state of FIG.
[0148]
Next, as shown in FIG. 17B, after removing the resist masks 311a to 311e, an n-type impurity element (phosphorus in this embodiment) is added to the semiconductor film. Note that the n-type impurity element addition step performed here may be performed under the same conditions as the addition step shown in FIG.
[0149]
Thus, n-type impurity regions (b) 501 to 509 and n-type impurity regions (c) 510 to 519 are formed. Note that the concentration of the n-type impurity element contained in the n-type impurity regions (b) 501 to 509 and the n-type impurity regions (c) 510 to 519 may be referred to the fourth embodiment.
[0150]
Next, resist masks 520a to 520e are formed, and an n-type impurity element (phosphorus in this embodiment) is added in the same manner as the adding step shown in FIG. Thus, n-type impurity regions (a) 521 to 529 are formed. Note that the concentration of the n-type impurity element contained in the n-type impurity regions (a) 521 to 529 may be referred to Example 4. (Fig. 17 (C))
[0151]
At this time, portions of the n-type impurity regions (b) 501 to 509 hidden by the resist masks 520a to 520e later function as LDD (lightly doped drain) regions. This embodiment is characterized in that the controllability of the LDD length is excellent because the length (LDD length) of the n-type impurity region (b) that functions as the LDD region later can be freely adjusted by the resist masks 520a to 520e. .
[0152]
Next, the resist masks 520a to 520e are removed, and a resist mask 530 is formed. Then, a p-type impurity element (boron in this embodiment) is added in the same manner as the adding step shown in FIG. Thus, p-type impurity regions (a) 531 to 534 are formed. Note that the concentration of the p-type impurity element contained in the p-type impurity regions (a) 531 to 534 may be referred to Example 4. (Fig. 17 (D))
[0153]
Thereafter, an EL light-emitting device may be manufactured according to the steps after the activation step shown in FIG. Further, since the completed TFT structure is almost the same as that of the fourth embodiment, the description of the fourth embodiment may be referred to. Note that this embodiment can be implemented in combination with any of the configurations of the embodiment of the invention and Examples 2 to 8.
[0154]
Example 10
In this example, an example of manufacturing an EL light-emitting device in a manufacturing process different from that of Example 4 will be described with reference to FIGS. In addition, since Example 4 is different from Example 4 in the middle, the reference numerals used in Example 4 are referred to as necessary.
[0155]
First, according to the manufacturing process of Example 4, the process up to the process of FIG. However, in this embodiment, the step of adding the n-type impurity element shown in FIG. 5C is omitted. In this way, the state of FIG.
[0156]
Next, as shown in FIG. 18B, after removing the resist masks 311a to 311e, an n-type impurity element (phosphorus in this embodiment) is added. Note that the n-type impurity element addition step performed here may be performed under the same conditions as the addition step shown in FIG.
[0157]
Thus, n-type impurity regions (b) 501 to 509 and n-type impurity regions (c) 510 to 519 are formed. Note that the concentration of the n-type impurity element contained in the n-type impurity regions (b) 501 to 509 and the n-type impurity regions (c) 510 to 519 may be referred to the fourth embodiment.
[0158]
Next, using the gate electrodes 335 to 339 as masks, an n-type impurity element (phosphorus in this embodiment) is added to the semiconductor film in the same manner as the adding step shown in FIG. Thus, n-type impurity regions (a) 541 to 549 are formed. Note that the concentration of the n-type impurity element contained in the n-type impurity regions (a) 541 to 549 may be referred to Example 4. (Figure 18 (C))
[0159]
Next, a resist mask 550 is formed, and a p-type impurity element (boron in this embodiment) is added in the same manner as the addition step shown in FIG. Thus, p-type impurity regions (a) 551 to 554 are formed. Note that the concentration of the p-type impurity element contained in the p-type impurity regions (a) 551 to 554 may be referred to Example 4. (Fig. 18D)
[0160]
Thereafter, an EL light-emitting device may be manufactured according to the steps after the activation step shown in FIG. Further, since the completed TFT structure is almost the same as that of the fourth embodiment, the description of the fourth embodiment may be referred to. Note that this embodiment can be implemented in combination with any of the configurations of the embodiment of the invention and Examples 2 to 8.
[0161]
Example 11
In the fourth embodiment, a resin film is used as the interlayer insulating film 373. In this embodiment, an insulating film containing silicon, specifically, a silicon oxide film is used. In the case of this embodiment, after the process of FIG. 6B is completed, a protective film (silicon nitride oxide film in this embodiment) having a thickness of 100 to 200 nm is formed so as to cover the gate electrode.
[0162]
Next, an activation step is performed in the same manner as in FIG. 6C, and then an interlayer insulating film (a silicon oxide film in this embodiment) having a thickness of 800 nm to 1 μm is provided. In this embodiment, before the interlayer insulating film is formed, heat treatment is performed at 350 to 500 ° C. in an atmosphere containing 3 to 100% hydrogen, and the dangling bonds of the active layer are terminated with excited hydrogen. .
[0163]
After these steps, a source wiring or a drain wiring is formed on the interlayer insulating film, and the source wiring and the drain wiring are covered with a passivation film. In this embodiment, a silicon nitride film or a silicon nitride oxide film is used as a passivation film.
[0164]
Note that the configuration of this example can be implemented by freely combining with any of the configurations of the embodiment of the invention and Examples 2 to 10.
[0165]
Example 12
In this embodiment, an example in which an EL element is sealed with a structure different from that of the EL display device described in Embodiment 4 will be described with reference to FIGS. In addition, the same code | symbol is used about the same part as FIG.
[0166]
In this embodiment, a plastic film having DLC films 1002a and 1002b formed on both sides is used as the cover material 1001. When the DLC film is formed on both surfaces of the plastic film, a roll-to-roll system in which the film is formed by winding the plastic film on a roll may be used.
[0167]
In this embodiment, a cover material 1001 is attached to a substrate manufactured up to an EL element according to Embodiment 4 using a sealing material 1003. Then, the end portion of the cover material 1001 is sealed with a seal material 1004. For the sealing material 1003 and the sealing material 1004 used in this embodiment, the materials shown in Embodiment 4 can be used.
[0168]
The configuration of this example can be implemented by freely combining with any of the configurations of the embodiment of the invention and Examples 1 to 11.
[0169]
Example 13
In this embodiment, a pixel structure shown in FIG. 9 in Embodiment 4 and a circuit diagram of the pixel structure shown in FIG. 15 in Embodiment 8 will be described. Here, FIG. 19A shows a circuit diagram corresponding to FIG. 9, and FIG. 19B shows a circuit diagram corresponding to FIG.
[0170]
In FIG. 19A, 340 is a source wiring, 379 is a current supply line, and 604 is a gate wiring. These symbols correspond to those in FIG. Reference numeral 1601 denotes a switching TFT shown in FIG. 10A, 1602 denotes a current control TFT shown in FIG. 10B, 1603 denotes a storage capacitor shown in FIG. 10C, and 1604 denotes an EL element.
[0171]
When the pixels shown in this embodiment are digitally driven, the driving method described in Japanese Patent Application No. 2000-114592 may be cited.
[0172]
Next, in FIG. 19B, reference numeral 1203 denotes a source wiring, 1207 denotes a current supply line, and 1202 denotes a gate wiring. These symbols correspond to FIG. 1605 is a switching TFT shown in FIG. 16A, 1606 is a current control TFT shown in FIG. 16B, 1607 is a storage capacitor shown in FIG. 16C, 1608 is an EL element, and 1609 is an eraser. TFT.
[0173]
When the pixels shown in this embodiment are digitally driven, the driving method described in Japanese Patent Application No. 11-338786 may be cited.
[0174]
The configuration of this example can be implemented by freely combining with any of the configurations of the embodiment of the invention and Examples 2-12.
[0175]
Example 14
In this embodiment, an example in which a color filter is bonded by peeling off a substrate after an active matrix substrate is completed will be described. Note that the steps of this embodiment are effective in realizing the structure of the third embodiment.
[0176]
First, an active matrix substrate having the structure shown in FIG. However, a peeling layer 1701 is provided between the substrate 301 and the base film 302 in this embodiment. In this embodiment, an amorphous silicon film (a polycrystalline silicon film may be used) is used as the peeling layer 1701. In addition, a plastic film 1702 is used as the cover material 388, and DLC films 1703 a and 1703 b are provided on both surfaces of the plastic film 1702. (FIG. 20 (A))
[0177]
Next, the entire active matrix substrate is exposed to a gas containing halogen fluoride to remove the peeling layer 1701. In this embodiment, chlorine trifluoride (ClF) is used as halogen fluoride. Three ) And nitrogen as the diluent gas. Argon, helium, or neon may be used as the dilution gas. Both flow rates were 500 sccm (8.35 × 10 -6 m Three / S), and the reaction pressure is 1 to 10 Torr (1.3 × 10 6). 2 ~ 1.3 × 10 Three Pa). The processing temperature may be room temperature (typically 20 to 27 ° C.).
[0178]
Note that halogen fluoride is a substance represented by the chemical formula XFn (where X is a halogen other than fluorine and n is an integer), and is chlorine monofluoride (ClF), chlorine trifluoride (ClF). Three ), Bromine monofluoride (BrF), bromine trifluoride (BrF) Three ), Iodine monofluoride (IF) or iodine trifluoride (IF Three ) Can be used. Halogen fluoride has a large selection ratio at the time of etching between the silicon film and the silicon oxide film, and the silicon film can be selectively etched.
[0179]
In this case, the silicon film which is the release layer is etched, but other portions exposed to the gas (the portions where the carbon film, the plastic film, the glass substrate, the resin film, and the silicon oxide film are exposed) are not etched. That is, the peeling layer 1701 is selectively etched by being exposed to chlorine trifluoride gas and finally completely removed.
[0180]
In this embodiment, the peeling layer 1701 is gradually etched from the exposed end portion, and the substrate 301 and the base film 302 are separated when completely removed. At this time, the TFT and the EL element are formed by laminating thin films, but remain in a form transferred to the plastic film 1702. (Fig. 20 (B))
[0181]
For this peeling technique, the technique described in Japanese Patent Application No. 2000-008403 by the present applicant may be cited. Moreover, the technique described in Japanese Patent Application No. 2000-071673 can also be cited.
[0182]
Next, as shown in FIG. 21, DLC films 1705a and 1705b are provided on both surfaces of the plastic film 1704, and a colored layer (R) 391a and a colored layer (B) 391b are formed thereon, and a resin layer 393 is formed. To produce a color filter. Then, the color filter is bonded to the base film 302.
[0183]
In this embodiment, since the TFT and the EL element are sandwiched between plastic films, the entire light emitting device becomes flexible. In addition, since all the substrates are formed of a plastic film, a thin and lightweight EL light emitting device can be obtained.
[0184]
Example 15
FIG. 22 shows an example of a film forming apparatus used for forming an EL element in carrying out the present invention. In this embodiment, a case where an in-line film forming apparatus is used will be described. In FIG. 22, reference numeral 201 denotes a load chamber from which the substrate 40 is transferred. The load chamber 201 is provided with an exhaust system 200a, and the exhaust system 200a includes a first valve 41, a turbo molecular pump 42, a second valve 43, and a rotary pump (oil rotary pump) 44.
[0185]
The first valve 41 is a main valve, sometimes serving as a conductance valve, and sometimes using a butterfly valve. The second valve 43 is a fore valve. First, the second valve 43 is opened, the load chamber 201 is roughly decompressed by the rotary pump 44, and then the first valve 41 is opened and the turbo molecular pump 42 is decompressed to a high vacuum. Although a mechanical booster pump or a cryopump can be used instead of the turbo molecular pump, the cryopump is particularly effective for removing moisture.
[0186]
Reference numeral 202 denotes a pretreatment chamber for treating the surface of the anode or cathode (an anode in this embodiment) of the EL element, and the pretreatment chamber 202 includes an exhaust system 200b. The load chamber 201 is hermetically sealed by a gate (not shown). The pretreatment chamber 202 can be variously changed depending on the manufacturing process of the EL element.
[0187]
As the pretreatment, ozone plasma treatment, oxygen plasma treatment, argon plasma treatment, neon plasma treatment, helium plasma treatment, or hydrogen plasma treatment can be performed. Moreover, it is also possible to heat simultaneously with plasma processing by providing a heater. Furthermore, it is also effective to enable ultraviolet light irradiation by providing an ultraviolet light lamp.
[0188]
In this embodiment, ozone plasma treatment is performed on the surface of the anode made of an oxide conductive film while heating the substrate to 100 ° C., and pretreatment for increasing the work function of the anode surface is performed simultaneously with the removal of moisture.
[0189]
Next, 203 is a vapor deposition chamber for depositing an organic material by a vapor deposition method, and is called a vapor deposition chamber (A). The vapor deposition chamber (A) 203 includes an exhaust system 200c. The pretreatment chamber 202 is hermetically sealed by a gate (not shown). In this embodiment, a hole injection layer is formed in the vapor deposition chamber (A) 203.
[0190]
Next, reference numeral 204 denotes a vapor deposition chamber for depositing an organic material by vapor deposition, and is referred to as a vapor deposition chamber (B). The vapor deposition chamber (B) 204 includes an exhaust system 200d. Further, the deposition chamber (A) 203 is hermetically shut off by a gate (not shown). In this embodiment, a hole transport layer is formed in the vapor deposition chamber (B) 204.
[0191]
Next, reference numeral 205 denotes a vapor deposition chamber for depositing an organic EL material by vapor deposition, and is referred to as a vapor deposition chamber (C). The vapor deposition chamber (C) 205 includes an exhaust system 200e. Further, the deposition chamber (B) 204 is hermetically shut off by a gate (not shown). In this embodiment, a light emitting layer that develops red color is formed in the vapor deposition chamber (C) 205.
[0192]
Next, reference numeral 206 denotes a vapor deposition chamber for depositing an organic EL material by a vapor deposition method and is referred to as a vapor deposition chamber (D). The vapor deposition chamber (D) 206 includes an exhaust system 200f. The vapor deposition chamber (C) 205 is hermetically shut off by a gate (not shown). In this embodiment, in the vapor deposition chamber (D) 206, a light emitting layer that emits green color is formed.
[0193]
Next, reference numeral 207 denotes a vapor deposition chamber for depositing an organic EL material by a vapor deposition method, and is referred to as a vapor deposition chamber (E). The vapor deposition chamber (E) 207 includes an exhaust system 200g. Further, the deposition chamber (D) 206 is hermetically shut off by a gate (not shown). In this embodiment, a light emitting layer that develops blue color is formed in the vapor deposition chamber (E) 207.
[0194]
Next, 208 is a vapor deposition chamber for depositing an organic material by a vapor deposition method, and is called a vapor deposition chamber (F). The vapor deposition chamber (F) 208 includes an exhaust system 200h. The vapor deposition chamber (E) 207 is hermetically shut off by a gate (not shown). In this embodiment, the electron transport layer is formed in the vapor deposition chamber (F) 208.
[0195]
Next, reference numeral 209 denotes an evaporation chamber for forming an organic material film by an evaporation method, and is referred to as an evaporation chamber (G). The vapor deposition chamber (G) 209 includes an exhaust system 200i. Further, the deposition chamber (F) 208 is hermetically sealed by a gate (not shown). In this embodiment, an electron injection layer is formed in the vapor deposition chamber (G) 209.
[0196]
Next, reference numeral 210 denotes a vapor deposition chamber for depositing a conductive film (a metal film serving as a cathode in this embodiment) that serves as an anode or a cathode of an EL element by a vapor deposition method, and is referred to as a vapor deposition chamber (H). The vapor deposition chamber (H) 210 includes an exhaust system 200j. The deposition chamber (G) 209 is hermetically shut off by a gate (not shown).
[0197]
In this example, an Al-Li alloy film (alloy film of aluminum and lithium) or an Al-Cs alloy film (alloy of aluminum and cesium) is used as a conductive film serving as a cathode of the EL element in the vapor deposition chamber (H) 210. Film). Note that it is possible to co-evaporate an element belonging to Group 1 or Group 2 of the periodic table and aluminum.
[0198]
Next, reference numeral 211 denotes a sealing chamber, which includes an exhaust system 200k. Further, the deposition chamber (H) 210 is hermetically shut off by a gate (not shown). In the sealing chamber 211, a DLC (diamond-like carbon) film is formed as a passivation film in order to protect the EL element from oxygen and moisture.
[0199]
A sputtering method or a plasma CVD method may be used to form the DLC film. Since the DLC film can be formed in a temperature range from room temperature to 100 ° C., it is suitable as a passivation film for protecting an EL element having low heat resistance. Moreover, since the thermal conductivity is high and the heat dissipation effect is good, the effect of suppressing the thermal deterioration of the EL element can be expected. Note that it is also effective to use the DLC film formed in this embodiment by being stacked with a silicon nitride film or a silicon carbide film.
[0200]
Further, fluorine or hydrogen may be added to the DLC film. Further, the oxygen concentration in the DLC film is set to 1 × 10. 18 atoms / cm Three The oxygen transmission rate can be reduced by the following.
[0201]
Finally, reference numeral 212 denotes an unload chamber, which has an exhaust system 200l. The substrate on which the EL element is formed is taken out from here.
[0202]
As described above, by using the film formation apparatus illustrated in FIG. 22, it is not necessary to expose to the outside air until the EL element is completely enclosed in a sealed space, so that a highly reliable EL display device can be manufactured. Become. In addition, an EL display device can be manufactured with high throughput by an inline method.
[0203]
Further, it is effective to operate each processing chamber, exhaust system, and transfer system of the film forming apparatus shown in this embodiment by computer control. In the case of this embodiment, a series of processes are continuously performed to complete the EL element, and therefore, from the substrate loading to the substrate removal can be managed by computer control.
[0204]
Note that an EL display device having any structure described in Embodiment Modes and Examples 1 to 14 may be manufactured using the film formation apparatus described in this example.
[0205]
Example 16
In the present invention, by using an EL material that can use phosphorescence from triplet excitons for light emission, the external light emission quantum efficiency can be dramatically improved. This makes it possible to reduce the power consumption, extend the life, and reduce the weight of the EL element.
Here, a report of using triplet excitons to improve the external emission quantum efficiency is shown.
(T. Tsutsui, C. Adachi, S. Saito, Photochemical Processes in Organized Molecular Systems, ed. K. Honda, (Elsevier Sci. Pub., Tokyo, 1991) p.437.)
The molecular formula of the EL material (coumarin dye) reported in the above paper is shown below.
[0206]
[Chemical 1]
[0207]
(MABaldo, DFO'Brien, Y.You, A.Shoustikov, S.Sibley, METhompson, SRForrest, Nature 395 (1998) p.151.)
The molecular formula of the EL material (Pt complex) reported in the above paper is shown below.
[0208]
[Chemical 2]
[0209]
(MABaldo, S. Lamansky, PEBurrrows, METhompson, SRForrest, Appl.Phys.Lett., 75 (1999) p.4.)
(T.Tsutsui, M.-J.Yang, M.Yahiro, K.Nakamura, T.Watanabe, T.tsuji, Y.Fukuda, T.Wakimoto, S.Mayaguchi, Jpn.Appl.Phys., 38 (12B (1999) L1502.)
The molecular formula of the EL material (Ir complex) reported in the above paper is shown below.
[0210]
[Chemical 3]
[0211]
As described above, if phosphorescence emission from triplet excitons can be used, in principle, it is possible to realize an external emission quantum efficiency that is 3 to 4 times higher than that in the case of using fluorescence emission from singlet excitons. Note that the configuration of this example can be implemented in combination with any of the configurations of the embodiment of the invention and Examples 1 to 15.
[0212]
Example 17
In this embodiment, a specific example of the EL element 385 shown in FIG. 7B in Embodiment 4 will be described with reference to FIGS. Note that the structural example of the EL element shown in this embodiment corresponds to an example in which the portion of the EL element 385 in FIG. 7B is enlarged. In addition, an example in which the EL element of this example is manufactured using the apparatus shown in FIG.
[0213]
Note that a known organic material or inorganic material can be used as a material for forming the EL layer in this embodiment. Further, it may be a high molecular material or a low molecular material.
[0214]
First, FIG. 23A shows a structure in which a hole injection layer 52, a hole transport layer 53, a light emitting layer 54, an electron transport layer 55, an electron injection layer 56, and a cathode 57 are stacked on an anode (pixel electrode) 51. It is an EL element. The light emitting layer 54 may be formed of three types of light emitting layers corresponding to red, green, and blue.
[0215]
In this embodiment, the surface of the anode 51 is improved in the pretreatment chamber 202, the hole injection layer 52 is formed in the vapor deposition chamber (A) 203, the hole transport layer 53 is formed in the vapor deposition chamber (B) 204, The light emitting layer 54 is formed in the vapor deposition chamber (C) 205 to the vapor deposition chamber (E) 207, the electron transport layer 55 is formed in the vapor deposition chamber (F) 208, and the electron injection layer 56 is formed in the vapor deposition chamber (G) 209. The cathode 57 is formed in the vapor deposition chamber (H) 210.
[0216]
Next, FIG. 23B shows an EL element having a structure in which a hole injection layer 52, a hole transport layer 53, a light emitting layer 54, an electron injection layer 56 and a cathode 57 are stacked on an anode (pixel electrode) 51. . The light emitting layer 54 may be formed of three types of light emitting layers corresponding to red, green, and blue.
[0217]
In this embodiment, the surface of the anode 51 is improved in the pretreatment chamber 202, the hole injection layer 52 is formed in the vapor deposition chamber (A) 203, the hole transport layer 53 is formed in the vapor deposition chamber (B) 204, The light emitting layer 54 is formed in the vapor deposition chamber (C) 205 to the vapor deposition chamber (E) 207, and the electron injection layer 56 is formed in the vapor deposition chamber (G) 209 through the vapor deposition chamber (F) 208. H) The cathode 57 is formed at 210.
[0218]
Next, FIG. 23C shows an EL element having a structure in which a hole injection layer 52, a light emitting layer 54, an electron transport layer 55, an electron injection layer 56 and a cathode 57 are stacked on an anode (pixel electrode) 51. The light emitting layer 54 may be formed of three types of light emitting layers corresponding to red, green, and blue.
[0219]
In this embodiment, the surface of the anode 51 is improved in the pretreatment chamber 202, the hole injection layer 52 is formed in the vapor deposition chamber (A) 203, and the vapor deposition chamber (C) passes through the vapor deposition chamber (B) 204. The light emitting layer 54 is formed in the vapor deposition chamber (E) 207, the electron transport layer 55 is formed in the vapor deposition chamber (F) 208, the electron injection layer 56 is formed in the vapor deposition chamber (G) 209, and the vapor deposition chamber (H ) 210 to form the cathode 57.
[0220]
Next, FIG. 23D shows an EL element having a structure in which a hole injection layer 52, a light emitting layer 54, an electron injection layer 56, and a cathode 57 are stacked on an anode (pixel electrode) 51. The light emitting layer 54 may be formed of three types of light emitting layers corresponding to red, green, and blue.
[0221]
In this embodiment, the surface of the anode 51 is improved in the pretreatment chamber 202, the hole injection layer 52 is formed in the vapor deposition chamber (A) 203, and the vapor deposition chamber (C) passes through the vapor deposition chamber (B) 204. The light emitting layer 54 is formed in the vapor deposition chamber (E) 207, passed through the vapor deposition chamber (F) 208, the electron injection layer 56 is formed in the vapor deposition chamber (G) 209, and the cathode is formed in the vapor deposition chamber (H) 210. 57 is formed.
[0222]
Next, FIG. 23E shows an EL element having a structure in which a cluster 58, a hole injection layer 52, a light emitting layer 54, an electron transport layer 55, an electron injection layer 56, and a cathode 57 are stacked on an anode (pixel electrode) 51. It is. The light emitting layer 54 may be formed of three types of light emitting layers corresponding to red, green, and blue. Further, the cluster 58 is provided in order to increase the work function of the anode 51. In this embodiment, iridium, nickel, or platinum is provided in a cluster shape (block shape). The cluster 18 preferably has a diameter or major axis of 10 to 100 nm and a height of 5 to 50 nm.
[0223]
In this embodiment, the surface of the anode 51 is improved in the pretreatment chamber 202, the cluster 58 is formed in the vapor deposition chamber (A), the hole injection layer 52 is formed in the vapor deposition chamber (B) 204, and the vapor deposition chamber (C ) The light emitting layer 54 is formed in the vapor deposition chamber (E) 207, the electron transport layer 55 is formed in the vapor deposition chamber (F) 208, the electron injection layer 56 is formed in the vapor deposition chamber (G) 209, and the vapor deposition chamber ( H) The cathode 57 is formed at 210.
[0224]
Next, FIG. 23F shows an EL element having a structure in which a cluster 58, a hole injection layer 52, a light emitting layer 54, an electron injection layer 56, and a cathode 57 are stacked on an anode (pixel electrode) 51. The light emitting layer 54 may be formed of three types of light emitting layers corresponding to red, green, and blue.
[0225]
In this embodiment, the surface of the anode 51 is improved in the pretreatment chamber 202, the cluster 58 is formed in the vapor deposition chamber (A), the hole injection layer 52 is formed in the vapor deposition chamber (B) 204, and the vapor deposition chamber (C ) The light emitting layer 54 is formed in the vapor deposition chamber (E) 207, passed through the vapor deposition chamber (F) 208, the electron injection layer 56 is formed in the vapor deposition chamber (G) 209, and in the vapor deposition chamber (H) 210. A cathode 57 is formed.
[0226]
As described above, even when EL elements having various structures are formed, they can be easily manufactured by using a film formation apparatus as shown in FIG. Note that the structure shown in this example can be implemented by freely combining with any of the structures of the embodiment of the invention and Examples 1 to 15.
[0227]
Example 18
A light-emitting device formed by implementing the present invention is a self-luminous type, so that it has excellent visibility in a bright place as compared with a liquid crystal display device and has a wide viewing angle. Therefore, it can be used as a display unit of various electric appliances.
[0228]
As an electric appliance of the present invention, a video camera, a digital camera, a goggle type display (head mounted display), a car navigation system, a car audio, a notebook personal computer, a game machine, a portable information terminal (mobile computer, cellular phone, portable type) A game machine or electronic book), an image playback device equipped with a recording medium (specifically, a compact disk (CD), laser disk (LD), digital versatile disk (DVD), etc.) And a device equipped with a display that can be used. Specific examples of these electric appliances are shown in FIGS.
[0229]
FIG. 24A illustrates an EL display, which includes a housing 2001, a support base 2002, and a display portion 2003. The light emitting device of the present invention can be used for the display portion 2003. Since the EL display is a self-luminous type, a backlight is not necessary, and a display portion thinner than a liquid crystal display can be obtained.
[0230]
FIG. 24B illustrates a video camera, which includes a main body 2101, a display portion 2102, an audio input portion 2103, operation switches 2104, a battery 2105, and an image receiving portion 2106. The light emitting device of the present invention can be used for the display portion 2102.
[0231]
FIG. 24C illustrates a digital camera, which includes a main body 2201, a display portion 2202, an eyepiece portion 2203, and operation switches 2204. The light emitting device of the present invention can be used for the display portion 2202.
[0232]
FIG. 24D shows an image reproducing apparatus (specifically, a DVD reproducing apparatus) provided with a recording medium, which includes a main body 2301, a recording medium (CD, LD, DVD, etc.) 2302, an operation switch 2303, and a display unit (a). 2304 and a display unit (b) 2305. The display unit (a) mainly displays image information, and the display unit (b) mainly displays character information. The light emitting device of the present invention can be used for these display units (a) and (b). Note that the image reproducing device provided with the recording medium may include a CD reproducing device, a game machine, and the like.
[0233]
FIG. 24E illustrates a portable (mobile) computer, which includes a main body 2401, a display portion 2402, an image receiving portion 2403, operation switches 2404, and a memory slot 2405. The electro-optical device of the present invention can be used for the display portion 2402. This portable computer can record information on a recording medium in which a flash memory or a non-volatile memory is integrated, and can reproduce the information.
[0234]
FIG. 24F illustrates a personal computer, which includes a main body 2501, a housing 2502, a display portion 2503, and a keyboard 2504. The light emitting device of the present invention can be used for the display portion 2503.
[0235]
If the light emission luminance of the EL material is increased in the future, the light including the output image information can be enlarged and projected by a lens or the like and used for a front type or rear type projector.
[0236]
In addition, the electronic devices often display information distributed through electronic communication lines such as the Internet and CATV (cable television), and in particular, opportunities for displaying moving image information are increasing. Since the response speed of the EL material is very high, it is suitable for displaying such a moving image.
[0237]
In addition, since the light emitting device consumes power in the light emitting portion, it is desirable to display information so that the light emitting portion is minimized. Therefore, when a light emitting device is used for a display unit mainly including character information such as a portable information terminal, particularly a mobile phone or a car audio, it is driven so that character information is formed by the light emitting part with a non-light emitting part as a background. It is desirable.
[0238]
Here, FIG. 25A illustrates a mobile phone, which includes a main body 2601, an audio output portion 2602, an audio input portion 2603, a display portion 2604, operation switches 2605, and an antenna 2606. The light-emitting device of the present invention can be used for the display portion 2604. Note that the display portion 2604 can suppress power consumption of the mobile phone by displaying white characters on a black background.
[0239]
FIG. 25B shows car audio (vehicle audio), which includes a main body 2701, a display portion 2702, and operation switches 2703 and 2704. The light emitting device of the present invention can be used for the display portion 2702. Moreover, although the vehicle-mounted audio is shown in this embodiment, it may be used for stationary (home) audio. Note that the display portion 2704 can suppress power consumption by displaying white characters on a black background.
[0240]
Furthermore, it is effective to provide a function of modulating the light emission luminance in accordance with the brightness of the usage environment by incorporating a photosensor and providing means for detecting the brightness of the usage environment. The user can recognize the image or the character information without any problem if the brightness of 100 to 150 can be secured in the contrast ratio as compared with the brightness of the usage environment. That is, when the usage environment is bright, it is possible to increase the brightness of the image for easy viewing, and when the usage environment is dark, the brightness of the image can be suppressed to reduce power consumption.
[0241]
As described above, the application range of the present invention is extremely wide and can be used for electric appliances in various fields. In addition, the electric appliance of this example can be obtained by using an EL light emitting device in which the configurations of the embodiment of the invention and Examples 1 to 17 are freely combined.
[0242]
【The invention's effect】
By implementing the present invention, the active matrix substrate or the passive matrix substrate and the color filter are manufactured in separate manufacturing steps, so that the yield of the entire light emitting device can be improved, and the manufacturing period of the light emitting device can be improved. Shortening can be achieved. As a result, an inexpensive light-emitting device can be provided by reducing manufacturing costs. Furthermore, an inexpensive electric appliance can be provided by using an inexpensive light emitting device.
[Brief description of the drawings]
FIG. 1 shows a cross-sectional structure of a pixel portion.
FIG. 2 illustrates a cross-sectional structure of a pixel portion.
FIG. 3 illustrates a cross-sectional structure of a pixel portion.
FIG. 4 illustrates a cross-sectional structure of a pixel portion.
FIGS. 5A and 5B illustrate a manufacturing process of a pixel portion and a driver circuit. FIGS.
6A and 6B illustrate a manufacturing process of a pixel portion and a driver circuit.
FIGS. 7A and 7B illustrate a manufacturing process of a pixel portion and a driver circuit. FIGS.
FIGS. 8A and 8B illustrate a manufacturing process of a pixel portion and a driver circuit. FIGS.
FIG. 9 is a diagram showing a top structure of a pixel portion.
FIG. 10 is a diagram showing a cross-sectional structure of a pixel portion.
FIG. 11 illustrates a circuit configuration of an EL light emitting device.
12A and 12B are a top view and a cross-sectional view of an EL light-emitting device.
FIGS. 13A and 13B illustrate a top structure and a cross-sectional structure of an EL light emitting device. FIGS.
FIG. 14 illustrates a top structure of a pixel portion.
FIG. 15 is a diagram showing a top structure of a pixel portion.
FIG 16 illustrates a cross-sectional structure of a pixel portion.
FIGS. 17A to 17C are diagrams illustrating manufacturing steps of a pixel portion and a driver circuit. FIGS.
FIGS. 18A to 18C are diagrams illustrating manufacturing steps of a pixel portion and a driver circuit. FIGS.
FIG. 19 is a diagram showing a circuit configuration of a pixel.
20 is a diagram showing a manufacturing process of a pixel portion. FIG.
FIG. 21 illustrates a cross-sectional structure of a pixel portion.
FIG. 22 shows a structure of an in-line film deposition apparatus.
FIG 23 illustrates a structure of an EL element.
FIG. 24 is a diagram showing a specific example of an electric appliance.
FIG. 25 is a diagram showing a specific example of an electric appliance.

Claims (7)

  1. A manufacturing method of a light emitting device having a base film, a light emitting layer, a colored layer provided on a plastic film, and a resin layer,
    The colored layer includes a colored layer that transmits red light, a colored layer that transmits green light, and a colored layer that transmits blue light,
    The colored layer that transmits red light has a portion that overlaps with the colored layer that transmits green light,
    The colored layer that transmits green light has a portion that overlaps the colored layer that transmits blue light,
    The colored layer that transmits blue light has a portion that overlaps with the colored layer that transmits red light,
    Forming a release layer on the surface of the substrate,
    Forming the base film on the release layer;
    Forming the light emitting layer on the base film,
    The substrate is peeled off by etching the release layer,
    A method for manufacturing a light-emitting device, wherein the colored layer is bonded to the back surface of the base film with the resin layer.
  2. A manufacturing method of a light emitting device having a base film, a light emitting layer, a colored layer provided on a plastic film, and a resin layer,
    The light emitting layer includes a light emitting layer from which red light emission can be obtained, a light emitting layer from which green light emission can be obtained, and a light emitting layer from which blue light emission can be obtained,
    The colored layer includes a colored layer that transmits red light, a colored layer that transmits green light, and a colored layer that transmits blue light,
    The colored layer that transmits the red light is disposed at a position corresponding to the light emitting layer from which the red light emission is obtained,
    The colored layer that transmits green light is disposed at a position corresponding to the light emitting layer from which the green light emission is obtained,
    The colored layer that transmits blue light is disposed at a position corresponding to the light emitting layer from which the blue light emission is obtained,
    The colored layer that transmits red light has a portion that overlaps with the colored layer that transmits green light,
    The colored layer that transmits green light has a portion that overlaps the colored layer that transmits blue light,
    The colored layer that transmits blue light has a portion that overlaps with the colored layer that transmits red light,
    Forming a release layer on the surface of the substrate,
    Forming the base film on the release layer;
    Forming the light emitting layer on the base film,
    The substrate is peeled off by etching the release layer,
    A method for manufacturing a light-emitting device, wherein the colored layer is bonded to the back surface of the base film with the resin layer.
  3. A manufacturing method of a light emitting device having a base film, a light emitting layer, a colored layer provided on a plastic film, and a resin layer,
    The colored layer includes a colored layer that transmits red light, a colored layer that transmits green light, and a colored layer that transmits blue light,
    The colored layer includes a black pigment or carbon particles,
    Forming a release layer on the surface of the substrate,
    Forming the base film on the release layer;
    Forming the light emitting layer on the base film,
    The substrate is peeled off by etching the release layer,
    A method for manufacturing a light-emitting device, wherein the colored layer is bonded to the back surface of the base film with the resin layer.
  4. A manufacturing method of a light emitting device having a base film, a light emitting layer, a colored layer provided on a plastic film, and a resin layer,
    The light emitting layer includes a light emitting layer from which red light emission can be obtained, a light emitting layer from which green light emission can be obtained, and a light emitting layer from which blue light emission can be obtained,
    The colored layer includes a colored layer that transmits red light, a colored layer that transmits green light, and a colored layer that transmits blue light,
    The colored layer that transmits the red light is disposed at a position corresponding to the light emitting layer from which the red light emission is obtained,
    The colored layer that transmits green light is disposed at a position corresponding to the light emitting layer from which the green light emission is obtained,
    The colored layer that transmits blue light is disposed at a position corresponding to the light emitting layer from which the blue light emission is obtained,
    The colored layer includes a black pigment or carbon particles,
    Forming a release layer on the surface of the substrate,
    Forming the base film on the release layer;
    Forming the light emitting layer on the base film,
    The substrate is peeled off by etching the release layer,
    A method for manufacturing a light-emitting device, wherein the colored layer is bonded to the back surface of the base film with the resin layer.
  5. In claim 1 or 2,
    The method for manufacturing a light-emitting device, wherein the colored layer contains a black pigment or carbon particles.
  6. In any one of Claims 1 thru | or 5 ,
    The method for manufacturing a light-emitting device, wherein the release layer is formed of a silicon film.
  7. In any one of Claims 1 thru | or 6 ,
    A method for manufacturing a light-emitting device, wherein the release layer is etched with a gas containing a halogen fluoride gas.
JP2001121821A 2000-04-25 2001-04-19 Method for manufacturing light emitting device Active JP4827313B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000124019 2000-04-25
JP2000124019 2000-04-25
JP2000-124019 2000-04-25
JP2001121821A JP4827313B2 (en) 2000-04-25 2001-04-19 Method for manufacturing light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001121821A JP4827313B2 (en) 2000-04-25 2001-04-19 Method for manufacturing light emitting device

Publications (3)

Publication Number Publication Date
JP2002015861A JP2002015861A (en) 2002-01-18
JP2002015861A5 JP2002015861A5 (en) 2008-04-24
JP4827313B2 true JP4827313B2 (en) 2011-11-30

Family

ID=26590730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001121821A Active JP4827313B2 (en) 2000-04-25 2001-04-19 Method for manufacturing light emitting device

Country Status (1)

Country Link
JP (1) JP4827313B2 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6909240B2 (en) * 2002-01-18 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP4490403B2 (en) * 2002-01-18 2010-06-23 株式会社半導体エネルギー研究所 The light-emitting device
SG126714A1 (en) * 2002-01-24 2006-11-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US7098069B2 (en) * 2002-01-24 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of preparing the same and device for fabricating the same
JP4651916B2 (en) * 2002-03-07 2011-03-16 株式会社半導体エネルギー研究所 The method for manufacturing a light emitting device
EP1343206B1 (en) 2002-03-07 2016-10-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus
JP4545385B2 (en) * 2002-03-26 2010-09-15 株式会社半導体エネルギー研究所 The method for manufacturing a light emitting device
US7190335B2 (en) 2002-03-26 2007-03-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
KR20030086166A (en) * 2002-05-03 2003-11-07 엘지.필립스 엘시디 주식회사 The organic electro-luminescence device and method for fabricating of the same
CN1656852A (en) 2002-05-23 2005-08-17 富士电机控股株式会社 Organic EL display
JP4266648B2 (en) 2003-01-21 2009-05-20 三洋電機株式会社 Electroluminescent display device
KR20120061906A (en) * 2003-05-16 2012-06-13 이 아이 듀폰 디 네모아 앤드 캄파니 Barrier films for plastic substrates fabricated by atomic layer deposition
TWI238449B (en) * 2003-06-06 2005-08-21 Pioneer Corp Organic semiconductor device and method of manufacture of same
JP4595955B2 (en) * 2003-10-23 2010-12-08 セイコーエプソン株式会社 The method of manufacturing an organic el device, organic el device, the electronic device
JP4689249B2 (en) * 2003-11-28 2011-05-25 株式会社半導体エネルギー研究所 Method for manufacturing display device
CN101635263B (en) 2003-11-28 2013-03-13 株式会社半导体能源研究所 Method of manufacturing display device
JP4606767B2 (en) * 2004-04-14 2011-01-05 共同印刷株式会社 Manufacturing method of the element substrate for a display device
US7268498B2 (en) 2004-04-28 2007-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2005331796A (en) * 2004-05-21 2005-12-02 Toppan Printing Co Ltd Color filter and color display device
JP4954527B2 (en) * 2004-10-14 2012-06-20 株式会社半導体エネルギー研究所 Method for manufacturing display device
US8772783B2 (en) 2004-10-14 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2006252775A (en) * 2005-03-07 2006-09-21 Ricoh Co Ltd Display device
KR100742372B1 (en) * 2005-11-29 2007-07-24 삼성에스디아이 주식회사 fabrication method of Organic light-emitting device
JP5076994B2 (en) * 2007-03-30 2012-11-21 大日本印刷株式会社 Light-emitting organic EL display panel
JP2008277270A (en) * 2007-03-30 2008-11-13 Dainippon Printing Co Ltd Light-emitting organic el display panel
JP5703569B2 (en) * 2010-02-23 2015-04-22 大日本印刷株式会社 Organic EL element panel and method for manufacturing the same
KR20140029181A (en) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
JP6070026B2 (en) * 2012-10-02 2017-02-01 大日本印刷株式会社 Organic el display device
JP6308543B2 (en) * 2013-05-27 2018-04-11 新日鉄住金化学株式会社 Manufacturing method of organic EL display device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3407451B2 (en) * 1994-01-18 2003-05-19 セイコーエプソン株式会社 A method of manufacturing a liquid crystal display device
JP3578828B2 (en) * 1995-03-21 2004-10-20 株式会社半導体エネルギー研究所 The method for manufacturing a display device
JPH11191487A (en) * 1997-12-26 1999-07-13 Chisso Corp Manufacture of organic el element
JP3408133B2 (en) * 1998-01-28 2003-05-19 シャープ株式会社 Production methods and color electroluminescent display device of a color electroluminescent display device
JP3799882B2 (en) * 1998-07-24 2006-07-19 セイコーエプソン株式会社 Display device
JP4712198B2 (en) * 2000-02-01 2011-06-29 株式会社半導体エネルギー研究所 The method for manufacturing a display device

Also Published As

Publication number Publication date
JP2002015861A (en) 2002-01-18

Similar Documents

Publication Publication Date Title
US7710028B2 (en) EL display device having pixel electrode with projecting portions and manufacturing method thereof
US6809343B2 (en) Electro luminescence display device
US6555968B2 (en) Light emitting device and a method of manufacturing the same
EP1096303B1 (en) Electronic device
US7633471B2 (en) Light-emitting device and electric appliance
US6611108B2 (en) Electronic device and driving method thereof
CN100470830C (en) Electroluminescence device and manufacturing method thereof
US8624235B2 (en) Semiconductor device and method of manufacturing same
EP2259322B1 (en) Electroluminescence display device
JP5256364B2 (en) Light emitting device
JP4101511B2 (en) Emitting device and a manufacturing method thereof
US7619258B2 (en) Display device
US7042151B2 (en) Electrical equipment having light-emitting device with triplet and singlet compounds in the light-emitting layer
US7579774B2 (en) Light emitting device and method for fabricating light emitting device
US10312468B2 (en) Light emitting device, electronic appliance, and method for manufacturing light emitting device
CN1263163C (en) Photoelectric apparatus and electronic apparatus
US9178168B2 (en) White light emitting device
US9391128B2 (en) Light emitting device and electronic device
US7274349B2 (en) Electronic device and electronic apparatus
CN1227739C (en) Electroluminescent display and electronic device having same
US7592193B2 (en) Light emitting device
JP5957512B2 (en) Electric appliance
US7935967B2 (en) Light-emitting device, liquid-crystal display device and method for manufacturing same
KR100764185B1 (en) A method of forming a thin film and method of manufacturing an EL display device
TWI587741B (en) Semiconductor device and method for manufacturing the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080310

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080310

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100830

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100907

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101029

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A132

Effective date: 20110621

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110815

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110906

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110913

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140922

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4827313

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140922

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250