JP4380124B2 - LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE - Google Patents

Description

（Ｒ１〜Ｒ９２は、それぞれ独立に、水素、炭素数１〜２０のアルキル基、アルコキシ基およびアルキルチオ基；炭素数６〜１８のアリール基およびアリールオキシ基；ならびに炭素数４〜１４の複素環化合物基からなる群から選ばれた基である。）
【００６６】
これらのなかでフェニレン基、置換フェニレン基、ビフェニレン基、置換ビフェニレン基、ナフタレンジイル基、置換ナフタレンジイル基、アントラセン−９，１０−ジイル基、置換アントラセン−９，１０−ジイル基、ピリジン−２，５−ジイル基、置換ピリジン−２，５−ジイル基、チエニレン基および置換チエニレン基が好ましい。さらに好ましくは、フェニレン基、ビフェニレン基、ナフタレンジイル基、ピリジン−２，５−ジイル基、チエニレン基である。
【００６７】
化学式（１）のＲ、Ｒ’が水素またはシアノ基以外の置換基である場合について述べると、炭素数１〜２０のアルキル基としては、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、デシル基、ラウリル基などが挙げられ、メチル基、エチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基が好ましい。アリール基としては、フェニル基、４−Ｃ１〜Ｃ１２アルコキシフェニル基（Ｃ１〜Ｃ１２は炭素数１〜１２であることを示す。以下も同様である。）、４−Ｃ１〜Ｃ１２アルキルフェニル基、１−ナフチル基、２−ナフチル基などが例示される。
【００６８】
溶媒可溶性の観点からは化学式（１）のＡｒが、１つ以上の炭素数４〜２０のアルキル基、アルコキシ基およびアルキルチオ基、炭素数６〜１８のアリール基およびアリールオキシ基ならびに炭素数４〜１４の複素環化合物基から選ばれた基を有していることが好ましい。
【００６９】
これらの置換基としては以下のものが例示される。炭素数４〜２０のアルキル基としては、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、デシル基、ラウリル基などが挙げられ、ペンチル基、ヘキシル基、ヘプチル基、オクチル基が好ましい。また、炭素数４〜２０のアルコキシ基としては、ブトキシ基、ペンチルオキシ基、ヘキシルオキシ基、ヘプチルオキシ基、オクチルオキシ基、デシルオキシ基、ラウリルオキシ基などが挙げられ、ペンチルオキシ基、ヘキシルオキシ基、ヘプチルオキシ基、オクチルオキシ基が好ましい。炭素数４〜２０のアルキルチオ基としては、ブチルチオ基、ペンチルチオ基、ヘキシルチオ基、ヘプチルチオ基、オクチルチオ基、デシルオキシ基、ラウリルチオ基などが挙げられ、ペンチルチオ基、ヘキシルチオ基、ヘプチルチオ基、オクチルチオ基が好ましい。アリール基としては、フェニル基、４−Ｃ１〜Ｃ１２アルコキシフェニル基、４−Ｃ１〜Ｃ１２アルキルフェニル基、１−ナフチル基、２−ナフチル基などが例示される。アリールオキシ基としては、フェノキシ基が例示される。複素環化合物基としては２−チエニル基、２−ピロリル基、２−フリル基、２−、３−または４−ピリジル基などが例示される。これら置換基の数は、該高分子蛍光体の分子量と繰り返し単位の構成によっても異なるが、溶解性の高い高分子蛍光体を得る観点から、これらの置換基が分子量６００当たり１つ以上であることがより好ましい。
【００７０】
なお、前記高分子蛍光体は、ランダム、ブロックまたはグラフト共重合体であってもよいし、それらの中間的な構造を有する高分子、例えばブロック性を帯びたランダム共重合体であってもよい。蛍光の量子収率の高い高分子蛍光体を得る観点からは完全なランダム共重合体よりブロック性を帯びたランダム共重合体やブロックまたはグラフト共重合体が好ましい。また、ここで形成する有機エレクトロルミネッセンス素子は、薄膜からの蛍光を利用することから、該高分子蛍光体は固体状態で蛍光を有するものが用いられる。
【００７１】
該高分子蛍光体に対して溶媒を使用する場合に、好適なものとしては、クロロホルム、塩化メチレン、ジクロロエタン、テトラヒドロフラン、トルエン、キシレンなどが例示される。高分子蛍光体の構造や分子量にもよるが、通常はこれらの溶媒に０．１ｗｔ％以上溶解させることができる。
また、前記高分子蛍光体としては、分子量がポリスチレン換算で１０３〜１０７であることが好ましく、それらの重合度は繰り返し構造やその割合によっても変わる。成膜性の点から一般には繰り返し構造の合計数で好ましくは４〜１００００、さらに好ましくは５〜３０００、特に好ましくは１０〜２０００である。
【００７２】
このような高分子蛍光体の合成法としては、特に限定されないものの、例えばアリーレン基にアルデヒド基が２つ結合したジアルデヒド化合物と、アリーレン基にハロゲン化メチル基が２つ結合した化合物とトリフェニルホスフィンとから得られるジホスホニウム塩からのＷｉｔｔｉｇ反応が例示される。また、他の合成法としては、アリーレン基にハロゲン化メチル基が２つ結合した化合物からの脱ハロゲン化水素法が例示される。さらに、アリーレン基にハロゲン化メチル基が２つ結合した化合物のスルホニウム塩をアルカリで重合して得られる中間体から熱処理により該高分子蛍光体を得るスルホニウム塩分解法が例示される。いずれの合成法においても、モノマーとして、アリーレン基以外の骨格を有する化合物を加え、その存在割合を変えることにより、生成する高分子蛍光体に含まれる繰り返し単位の構造を変えることができるので、化学式（１）で示される繰り返し単位が５０モル％以上となるように加減して仕込み、共重合してもよい。これらのうち、Ｗｉｔｔｉｇ反応による方法が、反応の制御や収率の点で好ましい。
【００７３】
さらに具体的に、前記高分子蛍光体の１つの例であるアリーレンビニレン系共重合体の合成法を説明する。例えば、Ｗｉｔｔｉｇ反応により高分子蛍光体を得る場合には、例えばまず、ビス（ハロゲン化メチル）化合物、より具体的には、例えば２，５−ジオクチルオキシ−ｐ−キシリレンジブロミドをＮ，Ｎ−ジメチルホルムアミド溶媒中、トリフェニルホスフィンと反応させてホスホニウム塩を合成し、これとジアルデヒド化合物、より具体的には、例えば、テレフタルアルデヒドとを、例えばエチルアルコール中、リチウムエトキシドを用いて縮合させるＷｉｔｔｉｇ反応により、フェニレンビニレン基と２，５−ジオクチルオキシ−ｐ−フェニレンビニレン基を含む高分子蛍光体が得られる。このとき、共重合体を得るために２種類以上のジホスホニウム塩および／または２種類以上のジアルデヒド化合物を反応させてもよい。
これらの高分子蛍光体を発光層の形成材料として用いる場合、その純度が発光特性に影響を与えるため、合成後、再沈精製、クロマトグラフによる分別等の純化処理をすることが望ましい。
なお、前記の高分子蛍光体からなる発光層の形成材料としては、フルカラー表示をなすため、赤、緑、青の三色の発光層形成材料が用いられる。
【００７４】
また、上述した発光層を形成する際、その材料をホスト／ゲスト系の発光材料、すなわちホスト材料にゲスト材料が添加分散された発光材料によって形成してもよい。
このような発光材料としては、ホスト材料として例えば高分子有機化合物や低分子材料が、またゲスト材料として得られる発光層の発光特性を変化させるための蛍光色素、あるいは燐光物質を含んでなるものが好適に用いられる。
高分子有機化合物としては、溶解性の低い材料の場合、例えば前駆体が塗布された後、以下の化学式（３）に示すように加熱硬化されることによって共役系高分子有機エレクトロルミネッセンス層となる発光層を生成し得るものがある。例えば、前駆体のスルホニウム塩の場合、加熱処理されることによりスルホニウム基が脱離し、共役系高分子有機化合物となるもの等がある。
また、溶解性の高い材料では、材料をそのまま塗布した後、溶媒を除去して発光層にし得るものもある。
【００７５】
【化２】

【００７６】
前記の高分子有機化合物は固体で強い蛍光を持ち、均質な固体超薄膜を形成することができる。しかも、形成能に富みＩＴＯ電極との密着性も高く、さらに、固化した後は強固な共役系高分子膜を形成する。
【００７７】
このような高分子有機化合物としては、例えばポリアリーレンビニレンが好ましい。ポリアリーレンビニレンは水系溶媒あるいは有機溶媒に可溶で第２の基体１１に塗布する際の塗布液への調製が容易であり、さらに一定条件下でポリマー化することができるため、光学的にも高品質の薄膜を得ることができる。
このようなポリアリーレンビニレンとしては、ＰＰＶ（ポリ（パラ−フェニレンビニレン））、ＭＯ−ＰＰＶ（ポリ（２，５−ジメトキシ−１，４−フェニレンビニレン））、ＣＮ−ＰＰＶ（ポリ（２，５−ビスヘキシルオキシ−１，４−フェニレン−（１−シアノビニレン）））、ＭＥＨ−ＰＰＶ（ポリ［２−メトキシ−５−（２’−エチルヘキシルオキシ）］−パラ−フェニレンビニレン）、等のＰＰＶ誘導体、ＰＴＶ（ポリ（２，５−チエニレンビニレン））等のポリ（アルキルチオフェン）、ＰＦＶ（ポリ（２，５−フリレンビニレン））、ポリ（パラフェニレン）、ポリアルキルフルオレン等が挙げられるが、なかでも化学式（４）に示すようなＰＰＶまたはＰＰＶ誘導体の前駆体からなるものや、化学式（５）に示すようなポリアルキルフルオレン（具体的には化学式（６）に示すようなポリアルキルフルオレン系共重合体）が特に好ましい。
ＰＰＶ等は強い蛍光を持ち、二重結合を形成するπ電子がポリマー鎖上で非極在化している導電性高分子でもあるため、高性能の有機エレクトロルミネッセンス素子を得ることができる。
【００７８】
【化３】

【００７９】
【化４】

【００８０】
【化５】

【００８１】
なお、前記ＰＰＶ薄膜の他に発光層を形成し得る高分子有機化合物や低分子材料、すなわち本例においてホスト材料として用いられるものは、例えばアルミキノリノール錯体（Ａｌｑ_３）やジスチリルビフェニル、さらに化学式（７）に示すＢｅＢｑ_２やＺｎ（ＯＸＺ）_２、そしてＴＰＤ、ＡＬＯ、ＤＰＶＢｉ等の従来より一般的に用いられているものに加え、ピラゾリンダイマー、キノリジンカルボン酸、ベンゾピリリウムパークロレート、ベンゾピラノキノリジン、ルブレン、フェナントロリンユウロピウム錯体等が挙げられ、これらの１種または２種以上を含む有機エレクトロルミネッセンス素子用組成物を用いることができる。
【００８２】
【化６】

【００８３】
一方、このようなホスト材料に添加されるゲスト材料としては、前記したように蛍光色素や燐光物質が挙げられる。特に蛍光色素は、発光層の発光特性を変化させることができ、例えば、発光層の発光効率の向上、または光吸収極大波長（発光色）を変えるための手段としても有効である。すなわち、蛍光色素は単に発光層材料としてではなく、発光機能そのものを担う色素材料として利用することができる。例えば、共役系高分子有機化合物分子上のキャリア再結合で生成したエキシトンのエネルギーを蛍光色素分子上に移すことができる。この場合、発光は蛍光量子効率が高い蛍光色素分子からのみ起こるため、発光層の電流量子効率も増加する。したがって、発光層の形成材料中に蛍光色素を加えることにより、同時に発光層の発光スペクトルも蛍光分子のものとなるので、発光色を変えるための手段としても有効となる。
【００８４】
なお、ここでいう電流量子効率とは、発光機能に基づいて発光性能を考察するための尺度であって、下記式により定義される。
ηE ＝放出されるフォトンのエネルギー／入力電気エネルギー
そして、蛍光色素のドープによる光吸収極大波長の変換によって、例えば赤、青、緑の３原色を発光させることができ、その結果フルカラー表示体を得ることが可能となる。
さらに蛍光色素をドーピングすることにより、エレクトロルミネッセンス素子の発光効率を大幅に向上させることができる。
【００８５】
蛍光色素としては、赤色の発色光を発光する発光層を形成する場合、レーザー色素のＤＣＭ−１、あるいはローダミンまたはローダミン誘導体、ペニレン等を用いるのが好ましい。これらの蛍光色素をＰＰＶなどホスト材料にドープすることにより、発光層を形成することができるが、これらの蛍光色素は水溶性のものが多いので、水溶性を有するＰＰＶ前駆体であるスルホニウム塩にドープし、その後、加熱処理すれば、より均一な発光層の形成が可能になる。このような蛍光色素として具体的には、ローダミンＢ、ローダミンＢベース、ローダミン６Ｇ、ローダミン１０１過塩素酸塩等が挙げられ、これらを２種以上混合したものであってもよい。
【００８６】
また、緑色の発色光を発光する発光層を形成する場合、キナクリドン、ルブレン、ＤＣＪＴおよびその誘導体を用いるのが好ましい。これらの蛍光色素についても、前記の蛍光色素と同様、ＰＰＶなどホスト材料にドープすることにより、発光層を形成することができるが、これらの蛍光色素は水溶性のものが多いので、水溶性を有するＰＰＶ前駆体であるスルホニウム塩にドープし、その後、加熱処理すれば、より均一な発光層の形成が可能になる。
【００８７】
さらに、青色の発色光を発光する発光層を形成する場合、ジスチリルビフェニルおよびその誘導体を用いるのが好ましい。これらの蛍光色素についても、前記の蛍光色素と同様、ＰＰＶなどホスト材料にドープすることにより、発光層を形成することができるが、これらの蛍光色素は水溶性のものが多いので、水溶性を有するＰＰＶ前駆体であるスルホニウム塩にドープし、その後、加熱処理すれば、より均一な発光層の形成が可能になる。
【００８８】
また、青色の発色光を有する他の蛍光色素としては、クマリンおよびその誘導体を挙げることができる。これらの蛍光色素は、ＰＰＶと相溶性がよく発光層の形成が容易である。また、これらのうち特にクマリンは、それ自体は溶媒に不溶であるものの、置換基を適宜に選択することによって溶解性を増し、溶媒に可溶となるものもある。このような蛍光色素として具体的には、クマリン−１、クマリン−６、クマリン−７、クマリン１２０、クマリン１３８、クマリン１５２、クマリン１５３、クマリン３１１、クマリン３１４、クマリン３３４、クマリン３３７、クマリン３４３等が挙げられる。
【００８９】
さらに、別の青色の発色光を有する蛍光色素としては、テトラフェニルブタジエン（ＴＰＢ）またはＴＰＢ誘導体、ＤＰＶＢｉ等を挙げることができる。これらの蛍光色素は、前記赤色蛍光色素等と同様に水溶液に可溶であり、またＰＰＶと相溶性がよく発光層の形成が容易である。
以上の蛍光色素については、各色ともに１種のみを用いてもよく、また２種以上を混合して用いてもよい。
なお、このような蛍光色素としては、化学式（８）に示すようなものや、化学式（９）に示すようなもの、さらに化学式（１０）に示すようなものが用いられる。
【００９０】
【化７】

【００９１】
【化８】

【００９２】
【化９】

【００９３】
これらの蛍光色素については、前記共役系高分子有機化合物等からなるホスト材料に対し、後述する方法によって０．５〜１０ｗｔ％添加するのが好ましく、１．０〜５．０ｗｔ％添加するのがより好ましい。蛍光色素の添加量が多過ぎると得られる発光層の耐候性および耐久性の維持が困難となり、一方、添加量が少な過ぎると、前述したような蛍光色素を加えることによる効果が十分に得られないからである。
【００９４】
また、ホスト材料に添加されるゲスト材料としての燐光物質としては、化学式（１１）に示すＩｒ（ｐｐｙ）_３、Ｐｔ（ｔｈｐｙ）_２、ＰｔＯＥＰなどが好適に用いられる。
【００９５】
【化１０】

【００９６】
なお、前記の化学式（１１）に示した燐光物質をゲスト材料とした場合、ホスト材料としては、特に化学式（１２）に示すＣＢＰ、ＤＣＴＡ、ＴＣＰＢや、前記したＤＰＶＢｉ、Ａｌｑ_３が好適に用いられる。
また、前記蛍光色素と燐光物質については、これらを共にゲスト材料としてホスト材料に添加するようにしてもよい。
【００９７】
【化１１】

【００９８】
なお、このようなホスト／ゲスト系の発光物質によって上述した発光層を形成する場合、ホスト材料とゲスト材料とを予め設定した量比で同時に吐出することにより、ホスト材料に所望する量のゲスト材料が添加された発光物質による発光層を形成することができる。
【００９９】
また、上述した例では、発光層の下層として正孔輸送層を形成し、上層として電子輸送層を形成したが、本発明はこれに限定されることなく、例えば正孔輸送層と電子輸送層とのうちの一方のみを形成するようにしてもよく、また、正孔輸送層に代えて正孔注入層を形成するようにしてもよく、さらに発光層のみを単独で形成するようにしてもよい。
【０１００】
さらに、正孔注入層、正孔輸送層、発光層、電子輸送層に加えて、ホールブロッキング層を例えば発光層の対向電極側に形成して、発光層の長寿命化を図ってもよい。このようなホールブロッキング層の形成材料としては、例えば化学式（１３）に示すＢＣＰや化学式（１４）で示すＢＡｌｑが用いられるが、長寿命化の点ではＢＡｌｑの方が好ましい。
【０１０１】
【化１２】

【０１０２】
【化１３】

【０１０３】
図１０〜１５は、本発明の電子機器の実施例を示している。
本例の電子機器は、上述した有機ＥＬ表示装置等の本発明の発光装置を表示手段として備えている。
図１０は、テレビ画像やコンピュータ送られる文字や画像を表示する表示装置の一例を示している。図１０において、符号１０００は本発明の発光装置を用いた表示装置本体を示している。なお、表示装置本体１０００は、上述した有機ＥＬ表示装置を用いることにより、大画面にも対応できる。
また、図１１は、車載用のナビゲーション装置の一例を示している。図１１において、符号１０１０はナビゲーション装置本体を示し、符号１０１１は本発明の発光装置を用いた表示部（表示手段）を示している。
また、図１２は、携帯型の画像記録装置（ビデオカメラ）の一例を示している。図１２において、符号１０２０は記録装置本体を示し、符号１０２１は本発明の発光装置を用いた表示部を示している。
また、図１３は、携帯電話の一例を示している。図１３において、符号１０３０は携帯電話本体を示し、符号１０３１は本発明の発光装置を用いた表示部（表示手段）を示している。
また、図１４は、ワープロ、パソコンなどの情報処理装置の一例を示している。図１４において、符号１０４０は情報処理装置を示し、符号１０４１は情報処理装置本体、符号１０４２はキーボードなどの入力部、符号１０４３は本発明の発光装置を用いた表示部を示している。
また、図１５は、腕時計型電子機器の一例を示している。図１５において、符号１０５０は時計本体を示し、符号１０５１は本発明の発光装置を用いた表示部を示している。
図１０〜１５に示す電子機器は、本発明の発光装置を表示手段として備えているので、観察される光の色度の最適化が図られ、良好な表示性能が得られる。
【０１０４】
以上、添付図面を参照しながら本発明に係る好適な実施例について説明したが、本発明は係る例に限定されないことは言うまでもない。上述した例において示した各構成部材の諸形状や組み合わせ等は一例であって、本発明の主旨から逸脱しない範囲において設計要求等に基づき種々変更可能である。
【０１０５】
【発明の効果】
本発明の発光装置によれば、光の取り出し側とは反対側に配置された光学機能膜によって、発光層の発光光の色度が補正されることにより、光の色度の最適化が図られる。また、発光層から発せられた光の一部の光に対してのみ、色度の補正を行うことにより、光の色度補正を行う場合であっても、輝度低下を抑制することができる。これにより、光の取り出し効率を高めることができる。
【０１０６】
また、本発明の発光装置の製造方法によれば、輝度の低下が抑制されかつ、光の色度が最適化された発光装置を製造することができる。
【０１０７】
また、本発明の電子機器によれば、光の色度が最適化された発光装置を備えることから、表示性能の向上を図ることができる。
【図面の簡単な説明】
【図１】 本発明の発光装置の一実施形態に係る有機ＥＬ表示装置を概念的に示す図である。
【図２】 本発明の発光装置を有機ＥＬ表示装置に適用した他の形態例を概念的に示す図である。
【図３】 有機ＥＬ表示装置の回路構造の一例を示す回路図である。
【図４】 有機ＥＬ表示装置における画素部の平面構造の一例を示す平面図である。
【図５】 画素部（有機ＥＬ素子）の断面構造を拡大して示す図である。
【図６】 本発明の電気光学装置の製造方法を有機ＥＬ素子を備える表示装置を製造するプロセスに適用した実施例を説明するための図である。
【図７】 本発明の電気光学装置の製造方法を有機ＥＬ素子を備える表示装置を製造するプロセスに適用した実施例を説明するための図である。
【図８】 本発明の電気光学装置の製造方法を有機ＥＬ素子を備える表示装置を製造するプロセスに適用した実施例を説明するための図である。
【図９】 本発明の電気光学装置の製造方法を有機ＥＬ素子を備える表示装置を製造するプロセスに適用した実施例を説明するための図である。
【図１０】 本発明の電子機器の実施例を示す図である。
【図１１】 本発明の電子機器の他の実施例を示す図である。
【図１２】 本発明の電子機器の他の実施例を示す図である。
【図１３】 本発明の電子機器の他の実施例を示す図である。
【図１４】 本発明の電子機器の他の実施例を示す図である。
【図１５】 本発明の電子機器の他の実施例を示す図である。
【符号の説明】
１０…有機ＥＬ表示装置（発光装置）、１１…基板、１３…陽極（画素電極、電極層）、１４…発光層、１６…陰極（対向電極、電極層）、２０…色度補正膜（光学機能膜）、２１…反射層。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a light emitting device including a light emitting layer, a manufacturing method thereof, and an electronic apparatus.
[0002]
[Prior art]
As a light emitting device including a light emitting layer, for example, there is an organic EL display device including an organic electroluminescence (hereinafter referred to as organic EL) element. In general, an organic EL element has an organic functional layer including a light emitting layer disposed between two opposing electrodes.
[0003]
When performing color display, the organic EL display device has a light emitting layer that emits light of a predetermined chromaticity for each of R (red), G (green), and B (blue) colors. On the substrate, light emitting layers corresponding to the respective colors are arranged in a predetermined arrangement.
[0004]
[Problems to be solved by the invention]
The chromaticity of light emitted from the light emitting layer can be obtained, for example, by appropriately selecting a material for forming the light emitting layer. However, when the chromaticity of the emitted light of the light emitting layer is far from the target value, it is necessary to correct the chromaticity of the emitted light.
However, when the chromaticity of the emitted light is corrected, there is a possibility that the luminance is lowered and the light extraction efficiency is lowered.
[0005]
The present invention has been made in view of the above-described circumstances, and an object thereof is to provide a light-emitting device that can optimize the chromaticity of light and has high light extraction efficiency, and a method for manufacturing the same. .
Another object of the present invention is to provide an electronic device with improved display performance.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, the light-emitting device of the present invention includes: Includes three types of light-emitting layers corresponding to red, green, and blue, respectively Luminescent layer And a reflective layer that is disposed on the side opposite to the side from which the emitted light of the light emitting layer is extracted and reflects light from the light emitting layer, Above At least one of the three light emitting layers For the light emitting layer, the light emitting layer And between the reflective layer and Of the emitted light wavelength Change Light absorption type With optical functional film , It is characterized by having.
According to the above light emitting device, light of a predetermined chromaticity is emitted by the light emitting layer, and the emitted light is extracted from a predetermined extraction side. The emitted light emitted toward the side opposite to the light extraction side passes through the optical function film, is reflected by the reflective layer, and is extracted from the extraction side. The extracted light includes light reflected by the reflection layer described above and light emitted from the beginning toward the extraction side. Of the above, the former light changes its chromaticity by entering the optical functional film. This optimizes the chromaticity of the light extracted from the light emitting device. The latter light among the above is extracted without entering the optical function film. As described above, in the above light emitting device, the optical characteristics are changed only for a part of the light emitted from the light emitting layer, so that a decrease in luminance is suppressed.
[0007]
In the above light emitting device, The optical functional film is arranged separately for each of red, green, and blue colors. Is preferred.
By arranging the optical functional film for the light emitting layer that emits light of a color that needs to be corrected, the chromaticity of the light is reliably optimized.
[0008]
In the above light emitting device, for example, an electrode that transmits the light emitted from the light emitting layer is disposed on the side opposite to the light emitting light extraction side with respect to the light emitting layer. The electrode is disposed between the light emitting layer.
In this case, the emitted light is reflected by the reflective layer after passing through the electrode and the optical function film on the side opposite to the predetermined emission light extraction side. Further, when emitted light is incident on the optical functional film, the chromaticity of the light changes.
[0009]
In the light emitting device, the optical function film may protect the light emitting layer from a predetermined substance. Examples of the predetermined substance include water, oxygen, and a metal substance.
Since the light emitting layer is protected from a predetermined substance by the optical functional film, the light emitting layer is prevented from being deteriorated.
[0010]
In the above light emitting device, in addition to the optical function film, another optical function film disposed on the light extraction side may be provided.
In this case, since the chromaticity of the light emitted from the light emitting layer changes on both the light extraction side and the opposite side with respect to the light emitting layer, the light chromaticity can be further optimized.
[0011]
Examples of the light emitting layer include an organic EL layer.
As the optical function film, for example, a chromaticity correction film for correcting the chromaticity of light is used.
An example of the chromaticity correction film is a color filter.
[0012]
An electronic apparatus according to the present invention includes the light-emitting device described above.
According to the above electronic device, since the above-described light emitting device is provided, the chromaticity of light is optimized and good display performance is obtained.
[0013]
The manufacturing method of the light emitting device of the present invention is as follows: Includes three types of light-emitting layers corresponding to red, green, and blue, respectively Luminescent layer Forming a reflective layer that is disposed on the side opposite to the side from which the emitted light of the light emitting layer is extracted and reflects light from the light emitting layer; Above At least one of the three light emitting layers For the light emitting layer Disposed between the light emitting layer and the reflective layer; Of the emitted light wavelength Forming an optical functional film that changes , With For each of red, green, and blue, the observed light is the light emitted from the light emitting layer toward the extraction side from the beginning, and the light emitted from the light emitting layer and reflected by the reflective layer. Include It is characterized by that.
According to the above manufacturing method, it is possible to manufacture a light emitting device in which a decrease in luminance is suppressed and the chromaticity of light is optimized.
[0014]
In the above method for manufacturing a light emitting device, at least one of the optical functional film and the reflective layer may be formed by a droplet discharge method.
According to the above manufacturing method, the optical functional film can be easily formed at a desired position by using the droplet discharge method.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
The present invention will be described below with reference to the drawings. Note that in each drawing to be referred to, the scale may be different from the actual one in order to make the size recognizable on the drawing.
FIG. 1 is a diagram conceptually showing an organic EL display device according to an embodiment of a light emitting device of the present invention. In FIG. 1, an organic EL display device 10 has a circuit element portion 12, a pixel electrode (anode) 13, an organic functional layer 15 including a light emitting layer 14, a counter electrode (cathode) 16, an optical function on a substrate 11 as a base. It has a structure in which a chromaticity correction film 20 as a film, a reflective layer 21, and a sealing portion 17 are sequentially laminated. Among these, an organic EL device (organic EL element) as an electro-optical element is configured including the anode 13, the functional layer 15, the cathode 16, the chromaticity correction film 20, the reflective layer 21, and the like.
In addition, the code | symbol 29 shown in FIG. 1 is a bank layer as a partition member provided in the boundary of a pixel. The bank layer 29 has a role of preventing mixing of adjacent materials when forming the organic EL element.
[0016]
In the organic EL display device, the holes injected from the anode side and the electrons injected from the cathode side recombine in the light emitting layer, and light is emitted via the excited state (light emission when the excited state is lost). Wake up. In addition, by appropriately selecting a material for forming the light emitting layer, emitted light having a predetermined chromaticity can be obtained. As a material for forming the light emitting layer, for example, a low molecular weight organic light emitting dye or a polymer light emitting material, that is, a light emitting material composed of various fluorescent materials or phosphorescent materials is used.
Note that layers having specific functions such as a hole injection layer, a hole transport layer, and an electron transport layer are appropriately formed between the anode and the light-emitting layer and between the cathode and the light-emitting layer, respectively. In addition, electrical control for light emission is performed through a circuit element unit including an active element or the like.
[0017]
The organic EL display device 10 shown in FIG. 1 is compatible with color display and emits three types of light emitting layers that emit light of chromaticity corresponding to three colors of red (R), green (G), and blue (B). 14 is included. In an organic EL display device, when performing color display, light emitting layers corresponding to R, G, and B colors are arranged on a substrate in a predetermined arrangement such as a stripe shape, a matrix shape (mosaic shape), or a delta shape. The The display device 10 is of a so-called back emission type in which the light emitted from the organic EL element is extracted from the substrate 11 side.
[0018]
In the back emission type organic EL display device 10, the light emitted from the light emitting layer 14 toward the substrate 11 is extracted through the substrate 11 as it is. On the other hand, the light emitted toward the side opposite to the substrate 11 side is reflected on the cathode 16 side and then extracted from the substrate 11 side. That is, the light (observed light) extracted from the display device 10 includes light emitted from the beginning toward the substrate 11 and light reflected from the cathode 16 side. In the display device 10, the light emitted from the light emitting layer 14 is reflected by the reflective layer 21 disposed outside the chromaticity correction film 20 on the cathode 16 side.
[0019]
Here, since the display device 10 is configured to extract light from the substrate 11 side, a transparent or translucent material is used as the substrate 11.
Similarly, materials for forming the anode 13 and the cathode 16 are transparent.
[0020]
The chromaticity correction film 20 controls the wavelength of incident light and corrects the chromaticity of the light. For example, a color filter is used. As a material for the color filter, for example, a material containing a light absorbing pigment is used. As an example, the color filter material is prepared by dispersing inorganic pigments of R, G, and B colors in a polyurethane oligomer or polymethyl methacrylate oligomer, and then using cyclohexanone and butyl acetate as low boiling solvents and butyl carbitol as high boiling solvents. It can be obtained by adding acetate and further adding a nonionic surfactant as a dispersant as necessary to adjust the viscosity to a predetermined range.
Further, the chromaticity correction film 20 is arranged separately for each color of the light emitting layer 14 of each color of R, G, and B. Note that it is not necessary to dispose all the chromaticity correction films 20 for all three types of light emitting layers 14 of R, G, and B. For example, when the chromaticity of the emitted light of the light emitting layer is close to the target value, the arrangement of the chromaticity correction film for the light emitting layer may be omitted.
Furthermore, the chromaticity correction film 20 is preferably provided so as to protect the light emitting layer 14 from a predetermined substance such as water, oxygen, or a metal substance. That is, the chromaticity correction film 20 may have a function of protecting the light emitting layer from a predetermined substance in addition to the function of correcting the chromaticity of light. Since the light emitting layer 14 is protected from a predetermined substance by the chromaticity correction film 20, the light emitting layer 14 is prevented from being deteriorated.
The chromaticity correction film 20 is preferably formed by, for example, a vapor deposition method, a sputtering method, a CVD method, or the like. In particular, the chromaticity correction film 20 is preferably formed by a vapor deposition method in terms of preventing damage to the light emitting layer due to heat. Further, the chromaticity correction film 20 may be formed using a photolithography method or a droplet discharge method.
[0021]
Moreover, as a forming material of the reflective layer 21, for example, a metal such as Al or Ag is used. The reflective layer 21 may be a single layer of a single material, a single layer of an alloy material, or a metal (including alloy) layer of two or three layers. The material for forming the reflective layer is not limited to the metal described above, as long as it reflects light from the light emitting layer.
The reflective layer 21 is preferably formed by, for example, a vapor deposition method, a sputtering method, a CVD method, or the like. In particular, the reflective layer 21 is preferably formed by a vapor deposition method in terms of preventing damage to the light emitting layer due to heat.
[0022]
Note that the chromaticity correction film 20 or the reflective layer 21 may be formed using a droplet discharge method (inkjet method). That is, the material for forming the chromaticity correction film 20 or the reflective layer 21 is in a liquid state, and the liquid is discharged as a droplet onto a desired position on the substrate.
[0023]
Examples of the discharge technology of the droplet discharge method include a charge control method, a pressure vibration method, an electromechanical conversion method, an electrothermal conversion method, and an electrostatic suction method. In the charge control method, a charge is applied to a material by a charging electrode, and the flight direction of the material is controlled by a deflection electrode and discharged from a nozzle. Moreover, the pressure vibration system is 30 kg / cm for the material. ² When a control voltage is not applied, the material moves straight and is ejected from the nozzle. When a control voltage is applied, the material is electrostatically discharged between the materials. Repulsion occurs and the material is scattered and not discharged from the nozzle. The electromechanical conversion method utilizes the property that a piezoelectric element (piezoelectric element) is deformed by receiving a pulse-like electric signal. The piezoelectric element is deformed through a flexible substance in a space where material is stored. Pressure is applied, and the material is extruded from this space and discharged from the nozzle. In the electrothermal conversion method, a material is rapidly vaporized by a heater provided in a space in which the material is stored to generate bubbles, and the material in the space is discharged by the pressure of the bubbles. In the electrostatic attraction method, a minute pressure is applied in a space in which the material is stored, a meniscus of the material is formed on the nozzle, and an electrostatic attractive force is applied in this state before the material is drawn out. In addition to this, techniques such as a system that uses a change in the viscosity of a fluid due to an electric field and a system that uses a discharge spark are also applicable.
[0024]
The droplet discharge method has an advantage that a material is less wasted and a desired amount of material can be accurately disposed at a desired position.
[0025]
The sealing portion 17 prevents water and oxygen from entering and prevents the cathode 16 or the functional layer 15 from being oxidized. The sealing portion 17 is a sealing resin applied to the substrate 11 and a sealing substrate bonded to the substrate 11 ( Sealing cans). As the material of the sealing resin, for example, a thermosetting resin or an ultraviolet curable resin is used, and in particular, an epoxy resin that is one kind of thermosetting resin is preferably used. The sealing resin is annularly applied to the periphery of the substrate 11 and is applied by, for example, a microdispenser. The sealing substrate is made of glass, metal, or the like, and the substrate 11 and the sealing substrate are bonded to each other via a sealing resin.
[0026]
In the display device 10 configured as described above, light emitted from the light emitting layer 14 toward the side opposite to the substrate 11 is incident on the chromaticity correction film 20 to correct its chromaticity. . Thereby, the chromaticity of the light extracted from the display device 10 is optimized. Further, light emitted from the light emitting layer 14 toward the substrate 11 side from the beginning is extracted from the substrate 11 side without entering the chromaticity correction film 20. In this way, since chromaticity correction is performed only for a part of the light emitted from the light emitting layer 14, the chromaticity correction film is disposed on the substrate side with respect to the light emitting layer. Thus, a decrease in luminance of the observed light is suppressed.
[0027]
FIG. 2 shows another embodiment in which the light emitting device of the present invention is applied to an organic EL display device. The display device 50 emits light from the light emitting layer 14 from the side opposite to the substrate 11 on which the circuit element portion is provided. It consists of a so-called top emission type that extracts light. 2, components having the same functions as those of the display device 10 shown in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted or simplified.
[0028]
In the top emission type organic EL display device 50, the light emitted from the light emitting layer 14 toward the substrate 11 is reflected on the anode 13 side, and then passes through the light emitting layer 14 to pass through the substrate. It is taken out from the side opposite to the 11 side. On the other hand, the light emitted toward the side opposite to the substrate 11 side passes through the cathode 16 and the like and is extracted. That is, the light extracted from the display device 50 includes light reflected on the anode 13 side and light emitted from the beginning toward the side opposite to the substrate 11 side.
[0029]
In the display device 50, on the anode 13 side, the chromaticity correction film 53 is disposed outside the anode 13 with respect to the light emitting layer 14, and the reflective layer 54 is disposed outside the chromaticity correction film 53. The light emitted from the light emitting layer 14 is reflected by the reflective layer 21 after passing through the chromaticity correction film 20 on the anode 13 side.
Of the light emitted from the light emitting layer 14, the light emitted toward the substrate 11 is incident on the chromaticity correction film 53, so that the chromaticity is corrected. This optimizes the chromaticity of the observed light. Of the light emitted from the light emitting layer 14, the light emitted from the beginning toward the opposite side of the substrate is extracted without entering the chromaticity correction film 53. In this way, since the chromaticity is corrected only for a part of the light emitted from the light emitting layer 14, a decrease in luminance of the observed light is suppressed.
In the case of the top emission type, since light is extracted from the opposite side of the substrate, there is an advantage that the aperture ratio of the pixel can be increased.
[0030]
Next, the display device 10 shown in FIG. 1 will be described in more detail.
FIG. 3 shows an example of the circuit structure of the display device 10 described above, and FIG. 4 shows an example of the planar structure of the pixel portion in the display device 10.
[0031]
As shown in FIG. 3, the display device 10 includes a plurality of scanning lines 131, a plurality of signal lines 132 extending in a direction intersecting the scanning lines 131, and the signal lines 132 on a substrate as a base. A plurality of common power supply lines 133 extending in parallel are respectively wired, and a pixel (pixel area element) 102 is provided at each intersection of the scanning line 131 and the signal line 132.
[0032]
For the signal line 132, for example, a data side driving circuit 103 including a shift register, a level shifter, a video line, and an analog switch is provided. On the other hand, a scanning side drive circuit 104 including a shift register and a level shifter is provided for the scanning line 131. In each of the pixel regions 102, a first thin film transistor 142 to which a scanning signal is supplied to the gate electrode via the scanning line 131 and an image signal supplied from the signal line 132 via the first thin film transistor 142. , A second thin film transistor 143 to which an image signal held by the storage capacitor cap is supplied to the gate electrode, and the second thin film transistor 143 and the common power supply line 133 are electrically connected to each other. A pixel electrode (anode) 13 into which a driving current sometimes flows from the common power supply line 133 and a light emitting unit 140 (light emitting layer) disposed between the pixel electrode 13 and the counter electrode (cathode) 16 are provided. It has been.
[0033]
As shown in FIG. 4, the planar structure of each pixel 102 is such that the four sides of the pixel electrode 13 having a rectangular planar shape are used for the signal line 132, the common power supply line 133, the scanning line 131, and other pixel electrodes not shown. The arrangement is surrounded by scanning lines. As the planar shape of the pixel region 102, an arbitrary shape such as a circle or an oval is applied in addition to the rectangle shown in the figure.
[0034]
Under such a configuration, when the scanning line 131 is driven and the first thin film transistor 142 is turned on, the potential of the signal line 132 at that time is held in the holding capacitor cap, and the state depends on the state of the holding capacitor cap. Thus, the conduction state of the second thin film transistor 143 is determined. Then, a current flows from the common power supply line 133 to the pixel electrode 13 through the channel of the second thin film transistor 143, and further, a current flows to the counter electrode 16 through the light emitting unit 140, whereby the light emitting unit 140 has an amount of current flowing therethrough. In response to the light emission.
[0035]
FIG. 5 shows an enlarged cross-sectional structure of the pixel portion 102 (organic EL element).
In FIG. 5, the organic EL element includes a substrate, an anode 13 (pixel electrode) made of a transparent electrode material, a hole injection layer (hole transport layer) 285 capable of injecting or transporting holes, and an electro-optical material. A light emitting layer 14 (organic EL layer) containing one organic EL material, a cathode 16 (counter electrode) provided on the upper surface of the light emitting layer 14, and a data signal to the anode 13 are formed on the substrate 11. Thin film transistors 142 and 143 are provided as energization control units for controlling whether to write data. An electron transport layer may be provided between the light emitting layer 14 and the cathode 16.
In addition, a chromaticity correction film 20 and a reflective layer 21 are sequentially arranged outside the cathode 16 with respect to the light emitting layer 14.
[0036]
In this example, the thin film transistors 142 and 143 are both formed in an n-channel type. Note that the thin film transistors 142 and 143 are not limited to n-channel TFTs, and p-channel thin film transistors may be used for both or one of them.
[0037]
The thin film transistors 142 and 143 are made of, for example, SiO. ₂ Is provided on the surface of the substrate 11 through the base protective film 201 mainly composed of the semiconductor film 204 and 205 made of silicon or the like and formed on the base protective film 201 so as to cover the semiconductor films 204 and 205. In addition, a gate insulating film 220 provided in an upper layer of the base protective film 201, gate electrodes 229 and 230 provided in a portion of the upper surface of the gate insulating film 220 facing the semiconductor films 204 and 205, a gate electrode 229, 230 is connected to the semiconductor films 204 and 205 through a first interlayer insulating film 250 provided on the gate insulating film 220 so as to cover 230, and a contact hole opened through the gate insulating film 220 and the first interlayer insulating film 250. Source electrodes 262, 263 and the source electrodes 262, 263 across the gate electrodes 229, 230, The drain electrodes 265 and 266 connected to the semiconductor films 204 and 205 through the contact holes opened through the gate insulating film 220 and the first interlayer insulating film 250, the source electrodes 262 and 263, and the drain electrodes 265 and 266 are covered. And a second interlayer insulating film 270 provided on the upper layer of the first interlayer insulating film 250.
[0038]
The pixel electrode (anode) 13 is disposed on the upper surface of the second interlayer insulating film 270, and the pixel electrode 13 and the drain electrode 266 are connected through a contact hole provided in the second interlayer insulating film 270. . Further, a third insulating layer (bank layer) 281 made of synthetic resin or the like is provided between a portion of the surface of the second interlayer insulating film 270 other than the portion where the organic EL element is provided and the cathode 16. Yes.
In FIG. 5, the bank layer 281 has a taper structure in which the length of the top side is smaller than the length of the bottom side. Conversely, the length of the top side is equal to or larger than the length of the bottom side. It may be a simple structure.
Further, when the materials of the first interlayer insulating film 250 and the second interlayer insulating film 270 are different from each other, as shown in the figure, the contact holes provided in the first interlayer insulating film 250 and the second interlayer insulating film 270 are provided. The contact hole 275 is preferably formed so as not to overlap.
[0039]
In addition, regions of the semiconductor films 204 and 205 that overlap with the gate electrodes 229 and 230 with the gate insulating film 220 interposed therebetween are channel regions 246 and 247. Further, in the semiconductor films 204 and 205, source regions 233 and 236 are provided on the source side of the channel regions 246 and 247, while drain regions 234 and 235 are provided on the drain side of the channel regions 246 and 247. ing. Among these, the source regions 233 and 236 are connected to the source electrodes 262 and 263 through contact holes that open through the gate insulating film 220 and the first interlayer insulating film 250. On the other hand, the drain regions 234 and 235 are connected to drain electrodes 265 and 266 that are formed in the same layer as the source electrodes 262 and 263 through contact holes that open through the gate insulating film 220 and the first interlayer insulating film 250. Yes. The pixel electrode 13 is electrically connected to the drain region 235 of the semiconductor film 205 through the drain electrode 266.
[0040]
Next, an embodiment in which the method for manufacturing a light emitting device of the present invention is applied to the above-described process for manufacturing the organic EL display device will be described with reference to FIGS. In this example, a process for simultaneously manufacturing an organic EL element including the above-described thin film transistors 142 and 143 and a thin film transistor for N-type and P-type driving circuits will be described.
[0041]
First, as shown in FIG. 6A, a substrate 11 is made of a silicon oxide film having a thickness of about 200 to 500 nm by plasma CVD using TEOS (tetraethoxysilane) or oxygen gas as a raw material as necessary. A base protective film 201 is formed. In addition to the silicon oxide film, a silicon nitride film or a silicon oxynitride film may be provided as the base protective film. By providing such an insulating film, heat dissipation can be improved.
[0042]
Next, the temperature of the substrate 11 is set to about 350 ° C., and a semiconductor film 200 made of an amorphous silicon film having a thickness of about 30 to 70 nm is formed on the surface of the base protective film using an ICVD method, a plasma CVD method, or the like. To do. The semiconductor film 200 is not limited to an amorphous silicon film, and may be a semiconductor film including an amorphous structure such as a microcrystalline semiconductor film. Alternatively, a compound semiconductor film including an amorphous structure such as an amorphous silicon germanium film may be used.
Subsequently, a crystallization process such as a laser annealing method or a rapid heating method (such as a lamp annealing method or a thermal annealing method) is performed on the semiconductor film 200 to crystallize the semiconductor film 200 into a polysilicon film. In the laser annealing method, for example, a line beam having a beam length of 400 mm is used with an excimer laser, and the output intensity thereof is, for example, 200 mJ / cm. ₂ And Note that the second harmonic or the third harmonic of the YAG laser may be used. As for the line beam, it is preferable to scan the line beam so that a portion corresponding to 90% of the peak value of the laser intensity in the short dimension direction overlaps each region.
[0043]
Next, as shown in FIG. 6B, unnecessary portions of the semiconductor film (polysilicon film) 200 are removed by patterning using a photolithography method or the like, and corresponding to each formation region of the thin film transistor, Island-shaped semiconductor films 202, 203, 204, and 205 are formed.
Subsequently, a gate insulating film 220 made of a silicon oxide film or a nitride film (silicon oxynitride film or the like) having a thickness of about 60 to 150 nm is formed so as to cover the semiconductor film 200 by plasma CVD using TEOS or oxygen gas as a raw material. To do. The gate insulating film 220 may have a single layer structure or a stacked structure. In addition, you may use other methods, such as not only a plasma CVD method but a thermal oxidation method. In addition, when the gate insulating film 220 is formed using a thermal oxidation method, the semiconductor film 200 is also crystallized, and these semiconductor films can be formed into a polysilicon film.
[0044]
Next, as shown in FIG. 6C, a gate electrode forming conductive film containing doped silicon, a silicide film, or a metal such as aluminum, tantalum, molybdenum, titanium, or tungsten on the entire surface of the gate insulating film 220. 221 is formed. The thickness of the conductive film 221 is, for example, about 200 nm.
Subsequently, a patterning mask 222 is formed on the surface of the gate electrode forming conductive film 221, and patterning is performed in this state. As shown in FIG. 6D, the P-type driver circuit transistor is formed. Then, a gate electrode 223 is formed. At this time, since the gate electrode forming conductive film 221 is covered with the patterning mask 222 on the side of the N-type pixel electrode transistor and the N-type driver circuit transistor, the gate electrode forming conductive film 221 is patterned. It will never be done. In addition, the gate electrode may be formed using a single-layer conductive film or a stacked structure.
[0045]
Next, as shown in FIG. 6E, the gate electrode 223 of the P-type driving circuit transistor, the region where the N-type pixel electrode transistor is formed, and the N-type driving circuit transistor are formed. Using the gate electrode forming conductive film 221 left in the region as a mask, a p-type impurity element (boron in this example) is ion-implanted. For example, the dose is about 1 × 1015 cm ^-2 It is. As a result, the impurity concentration is, for example, 1 × 1020 cm. ^-3 High-concentration source / drain regions 224 and 225 are formed in a self-aligned manner with respect to the gate electrode 223. Here, a portion which is covered with the gate electrode 223 and no impurity is introduced becomes a channel region 226.
[0046]
Next, as shown in FIG. 7A, the P-type driving circuit transistor side is completely covered, and the N-type pixel electrode TFT 10 and the N-type driving circuit transistor side gate electrode formation are formed. A patterning mask 227 made of a resist mask or the like covering the region is formed.
[0047]
Next, as shown in FIG. 7B, the patterning mask 227 is used to pattern the gate electrode forming conductive film 221 so that an N-type pixel electrode transistor and an N-type driver circuit transistor gate electrode are formed. 228, 229, 230 are formed.
Subsequently, an n-type impurity element (phosphorus in this example) is ion-implanted while the patterning mask 227 remains. For example, the dose is 1 × 1015 cm ^-2 It is. As a result, impurities are introduced in a self-aligned manner with respect to the patterning mask 227, and high concentration source / drain regions 231, 232, 233, 234, 235, 236 are formed in the semiconductor films 203, 204, 205. . Here, in the semiconductor films 203, 204, and 205, a region where high concentration phosphorus is not introduced is wider than a region covered with the gate electrodes 228, 229, and 230. That is, in the semiconductor films 203, 204, and 205, high concentration between the high concentration source / drain regions 231, 232, 233, 234, 235, and 236 is on both sides of the region facing the gate electrodes 228, 229, and 230. A region where low phosphorus is not introduced (low concentration source / drain regions described later) is formed.
[0048]
Next, the patterning mask 227 is removed, and an n-type impurity element (phosphorus in this example) is ion-implanted in this state. For example, the dose is 1 × 1013 cm ^-2 It is. As a result, as shown in FIG. 7C, low concentration impurities are introduced into the semiconductor films 203, 204, and 205 in a self-aligned manner with respect to the gate electrodes 228, 229, and 230. 237, 238, 239, 240, 241, 242 are formed. Note that impurities are not introduced into regions overlapping with the gate electrodes 228, 229, and 230, and channel regions 245, 246, and 247 are formed.
[0049]
Next, as shown in FIG. 7D, a first interlayer insulating film 250 is formed on the surface side of the gate electrodes 228, 229, 230, and is patterned by a photolithography method or the like to form predetermined source electrode positions and drain electrodes. A contact hole is formed at the position. As the first interlayer insulating film 250, for example, an insulating film containing silicon such as a silicon oxynitride film or a silicon oxide film may be used. Further, it may be a single layer or a laminated film. Further, heat treatment is performed in an atmosphere containing hydrogen to terminate the dangling bonds of the semiconductor film with hydrogen (hydrogenation). Note that hydrogenation may be performed using hydrogen excited by plasma.
Subsequently, a conductive film 251 to be a source electrode and a drain electrode is formed from above using a metal film such as an aluminum film, a chromium film, or a tantalum film. The thickness of the conductive film 251 is, for example, about 200 nm to 300 nm. The conductive film may be a single layer or a laminated film.
Subsequently, a patterning mask 252 is formed at the positions of the source electrode and the drain electrode, and patterning is performed, so that the source electrodes 260, 261, 262, and 263 and the drain electrodes 264, 265, and 266 shown in FIG. Are formed at the same time.
[0050]
Next, as shown in FIG. 8A, a second interlayer insulating film 270 made of silicon nitride or the like is formed. The thickness of the second interlayer insulating film 270 is, for example, about 1 to 2 μm. As a material for forming the second interlayer insulating film 270, a material capable of transmitting light, such as a silicon oxide film, an organic resin, or silica airgel, is used. As the organic resin, acrylic, polyimide, polyamide, BCB (benzocyclobutene), or the like can be used.
[0051]
Next, as shown in FIG. 8B, the second interlayer insulating film 270 is removed by etching, and a contact hole 275 reaching the drain electrode 266 is formed.
[0052]
Next, as shown in FIG. 8C, a film made of, for example, SnO2 doped with ITO or fluorine, and a transparent electrode material such as ZnO or polyaniline is formed so as to be embedded in the contact hole 275. The pixel electrode 13 electrically connected to the source / drain regions 235 and 236 is formed. The pixel electrode 13 serves as an anode of the EL element.
[0053]
Next, as shown in FIG. 9A, a third insulating layer (bank layer) 29 is formed so as to sandwich the pixel electrode 13. Specifically, for example, a resist such as acrylic resin or polyimide resin melted in a solvent is applied by spin coating, dip coating or the like to form an insulating layer, and the insulating layer is simultaneously etched by photolithography technology or the like. To do. As the third insulating layer 29, a synthetic resin such as an acrylic resin or a polyimide resin is used. Note that a bank layer including wiring such as signal lines, common power supply lines, and scanning lines may be formed.
[0054]
Subsequently, a hole injection layer 285 is formed so as to cover the pixel electrode 13.
In this example, the hole transport layer 285 is formed using a droplet discharge device that discharges the forming material as droplets. That is, the material for forming the hole injection layer 285 is discharged from the nozzle 114 toward the substrate 11. By placing a predetermined amount of material on the substrate 11, the hole injection layer 285 is formed on the substrate 11.
[0055]
In addition, when the material becomes liquid on the substrate 11, it spreads in the horizontal direction due to its fluidity, but the spread is prevented by the partition walls of the third insulating layer (bank layer). Note that in the case where inconvenience due to material flow does not occur due to processing conditions, material characteristics, or the like, the height of the third insulating layer may be reduced, or a structure without a partition may be employed. Further, after discharging the material from the nozzle 114 onto the substrate 11, the material may be solidified or cured by performing a treatment such as heating or light irradiation on the substrate 11 as necessary.
[0056]
As a material for forming the hole injection layer, for example, PEDT / PSS which is a mixture of polyethylene dioxythiophene and polystyrene sulfonic acid is desirably used. Other examples include a mixture of polyaniline and polystyrene sulfonic acid and copper phthalocyanine (CuPc). In the case of forming both a hole injection layer and a hole transport layer in a low molecular weight organic EL device or the like, for example, the hole injection layer is formed on the pixel electrode side prior to the formation of the hole transport layer, A hole transport layer is preferably formed thereon. By forming the hole injection layer together with the hole transport layer in this manner, it is possible to control the increase in driving voltage and to increase the driving life (half life).
[0057]
Next, as shown in FIG. 9B, the light emitting layer 14 is formed on the hole injection layer 285.
In this example, the light emitting layer 14 is formed by using the above-described droplet discharge device, similarly to the previous hole injection layer. That is, the material for forming the light emitting layer 14 is discharged as droplets from the nozzle 114 toward the substrate 11.
[0058]
As the material for forming the light-emitting layer 14, a polymer light emitter can be used, and a polymer having a light-emitting group in the side chain can be used, but preferably contains a conjugated structure in the main chain, Polyfluorene, poly-p-phenylene vinylene, polythiophene, polyarylene vinylene, and derivatives thereof are preferred. Of these, polyarylene vinylene and its derivatives are preferred. The polyarylene vinylene and its derivatives are polymers containing 50 mol% or more of the repeating units represented by the following chemical formula (1) based on the total repeating units. Although it depends on the structure of the repeating unit, it is more preferable that the repeating unit represented by the chemical formula (1) is 70% or more of the entire repeating unit.
-Ar-CR = CR'- (1)
[Wherein Ar is an arylene group or heterocyclic compound group having 4 to 20 carbon atoms involved in the conjugated bond, R and R ′ are each independently hydrogen, an alkyl group having 1 to 20 carbon atoms. , A group selected from the group consisting of an aryl group having 6 to 20 carbon atoms, a heterocyclic compound having 4 to 20 carbon atoms, and a cyano group. ]
[0059]
The polymeric fluorescent substance includes an aromatic compound group or a derivative thereof, a heterocyclic compound group or a derivative thereof, and a group obtained by combining them as a repeating unit other than the repeating unit represented by the chemical formula (1). May be. In addition, the repeating unit represented by the chemical formula (1) and other repeating units may be linked by a non-conjugated unit having an ether group, an ester group, an amide group, an imide group, or the like, Non-conjugated moieties may be included.
[0060]
In the polymer fluorescent substance, Ar in the chemical formula (1) is an arylene group or a heterocyclic compound group having 4 to 20 carbon atoms involved in the conjugated bond, and is represented by the following chemical formula (2). Examples include an aromatic compound group or a derivative group thereof, a heterocyclic compound group or a derivative group thereof, and a group obtained by combining them. In the low molecular organic EL device, low molecular phosphors such as naphthalene derivatives, anthracene derivatives, perylene derivatives, polymethine-based, xanthene-based, coumarin-based, cyanine-based dyes, 8-hydroquinoline and metal complexes of derivatives thereof. , Aromatic amines, tetraphenylcyclopentadiene derivatives and the like, or known ones described in JP-A-57-51781 and 59-194393 can be used.
[0061]
In addition, an electron carrying layer can be provided on a light emitting layer as needed.
The material for forming the electron transport layer is not particularly limited, but is an oxadiazole derivative, anthraquinodimethane and its derivative, benzoquinone and its derivative, naphthoquinone and its derivative, anthraquinone and its derivative, tetracyanoanthraquinodimethane And derivatives thereof, fluorenone derivatives, diphenyldicyanoethylene and derivatives thereof, diphenoquinone derivatives, metal complexes of 8-hydroxyquinoline and derivatives thereof, and the like. Specifically, as with the material for forming the hole transport layer, JP-A-63-70257, JP-A-63-175860, JP-A-2-135359, JP-A-2-135361, and JP-A-2-209888 are disclosed. And the like described in JP-A-3-379992 and 3-152184, particularly 2- (4-biphenylyl) -5- (4-t-butylphenyl) -1,3,4. -Oxadiazole, benzoquinone, anthraquinone, tris (8-quinolinol) aluminum are preferred.
[0062]
Note that a material for forming the hole injection layer (hole transport layer) 285 or a material for forming the electron transport layer 287 may be mixed with the material for forming the light emitting layer 14 and used as the light emitting layer forming material. In that case, although the amount of the hole transport layer forming material or electron transport layer forming material used varies depending on the type of compound used, etc., it should be considered within an amount range that does not impair sufficient film formability and light emission characteristics. To be determined as appropriate. Usually, it is 1 to 40 weight% with respect to the light emitting layer forming material, More preferably, it is 2 to 30 weight%.
[0063]
Next, as shown in FIG. 9C, the counter electrode 16 as a cathode is formed on the entire surface of the substrate 11 or in a stripe shape. Further, the chromaticity correction film 20 and the reflective layer 21 are formed outside the counter electrode 16.
In this example, the chromaticity correction film 20 is formed using the above-described droplet discharge device by using the step formed by the bank layer 29. That is, the material for forming the chromaticity correction film 20 is discharged as droplets and discharged to the recesses of the counter electrode 16. At this time, for each of R, G, and B colors, a material is arranged corresponding to the position of the corresponding light emitting layer. By using the droplet discharge method, various materials such as a high molecular material and a low molecular material can be arranged on the substrate. Further, by using the droplet discharge method, the chromaticity correction film can be easily formed at a desired position.
[0064]
Through the above process, an organic EL element and a thin film transistor for N-type and P-type drive circuits are completed.
[0065]
Here, the above chemical formula (2) is shown.
[Chemical 1]

(R1 to R92 are each independently hydrogen, an alkyl group having 1 to 20 carbon atoms, an alkoxy group and an alkylthio group; an aryl group and aryloxy group having 6 to 18 carbon atoms; and a heterocyclic compound having 4 to 14 carbon atoms. A group selected from the group consisting of groups.)
[0066]
Among these, phenylene group, substituted phenylene group, biphenylene group, substituted biphenylene group, naphthalenediyl group, substituted naphthalenediyl group, anthracene-9,10-diyl group, substituted anthracene-9,10-diyl group, pyridine-2, 5-diyl group, substituted pyridine-2,5-diyl group, thienylene group and substituted thienylene group are preferred. More preferred are a phenylene group, a biphenylene group, a naphthalenediyl group, a pyridine-2,5-diyl group, and a thienylene group.
[0067]
When R and R ′ in the chemical formula (1) are hydrogen or a substituent other than a cyano group, the alkyl group having 1 to 20 carbon atoms includes a methyl group, an ethyl group, a propyl group, a butyl group, and a pentyl group. Hexyl group, heptyl group, octyl group, decyl group, lauryl group and the like, and methyl group, ethyl group, pentyl group, hexyl group, heptyl group and octyl group are preferable. Examples of the aryl group include a phenyl group, a 4-C1-C12 alkoxyphenyl group (C1-C12 indicates that the number of carbon atoms is 1-12, and the same shall apply hereinafter), a 4-C1-C12 alkylphenyl group, 1 -A naphthyl group, 2-naphthyl group, etc. are illustrated.
[0068]
From the viewpoint of solvent solubility, Ar in the chemical formula (1) is one or more alkyl groups having 4 to 20 carbon atoms, alkoxy groups and alkylthio groups, aryl groups and aryloxy groups having 6 to 18 carbon atoms, and 4 to 4 carbon atoms. It preferably has a group selected from 14 heterocyclic compound groups.
[0069]
Examples of these substituents are as follows. Examples of the alkyl group having 4 to 20 carbon atoms include a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, and a lauryl group, and a pentyl group, a hexyl group, a heptyl group, and an octyl group are preferable. Examples of the alkoxy group having 4 to 20 carbon atoms include a butoxy group, a pentyloxy group, a hexyloxy group, a heptyloxy group, an octyloxy group, a decyloxy group, a lauryloxy group, and the like, such as a pentyloxy group and a hexyloxy group. , A heptyloxy group and an octyloxy group are preferable. Examples of the alkylthio group having 4 to 20 carbon atoms include a butylthio group, a pentylthio group, a hexylthio group, a heptylthio group, an octylthio group, a decyloxy group, and a laurylthio group, and a pentylthio group, a hexylthio group, a heptylthio group, and an octylthio group are preferable. Examples of the aryl group include a phenyl group, a 4-C1-C12 alkoxyphenyl group, a 4-C1-C12 alkylphenyl group, a 1-naphthyl group, and a 2-naphthyl group. A phenoxy group is illustrated as an aryloxy group. Examples of the heterocyclic compound group include a 2-thienyl group, 2-pyrrolyl group, 2-furyl group, 2-, 3- or 4-pyridyl group. The number of these substituents varies depending on the molecular weight of the polymeric fluorescent substance and the constitution of the repeating unit, but from the viewpoint of obtaining a highly soluble polymeric fluorescent substance, these substituents are one or more per 600 molecular weight. It is more preferable.
[0070]
The polymeric fluorescent substance may be a random, block or graft copolymer, or may be a polymer having an intermediate structure thereof, for example, a random copolymer having a block property. . From the viewpoint of obtaining a polymer fluorescent substance having a high fluorescence quantum yield, a random copolymer having a block property and a block or graft copolymer are preferable to a complete random copolymer. Moreover, since the organic electroluminescent element formed here utilizes fluorescence from a thin film, the polymer fluorescent substance having fluorescence in a solid state is used.
[0071]
When a solvent is used for the polymeric fluorescent substance, preferred examples include chloroform, methylene chloride, dichloroethane, tetrahydrofuran, toluene, xylene and the like. Although depending on the structure and molecular weight of the polymeric fluorescent substance, it can usually be dissolved in these solvents in an amount of 0.1 wt% or more.
Moreover, as said polymeric fluorescent substance, it is preferable that molecular weight is 103-107 in polystyrene conversion, Their polymerization degree changes also with a repeating structure and its ratio. In general, the total number of repeating structures is preferably 4 to 10000, more preferably 5 to 3000, and particularly preferably 10 to 2000 from the viewpoint of film formability.
[0072]
The method for synthesizing such a polymeric fluorescent substance is not particularly limited. For example, a dialdehyde compound in which two aldehyde groups are bonded to an arylene group, a compound in which two halogenated methyl groups are bonded to an arylene group, and triphenyl A Wittig reaction from a diphosphonium salt obtained from phosphine is exemplified. As another synthesis method, a dehydrohalogenation method from a compound in which two halogenated methyl groups are bonded to an arylene group is exemplified. Further, a sulfonium salt decomposition method for obtaining the polymeric fluorescent substance by heat treatment from an intermediate obtained by polymerizing a sulfonium salt of a compound having two halogenated methyl groups bonded to an arylene group with an alkali is exemplified. In any of the synthesis methods, a compound having a skeleton other than an arylene group is added as a monomer, and by changing the abundance ratio, the structure of the repeating unit contained in the generated polymeric fluorescent substance can be changed. The repeating unit represented by (1) may be added and adjusted so as to be 50 mol% or more and copolymerized. Among these, the method by Wittig reaction is preferable in terms of reaction control and yield.
[0073]
More specifically, a method for synthesizing an arylene vinylene copolymer, which is one example of the polymeric fluorescent substance, will be described. For example, when obtaining a polymeric fluorescent substance by Wittig reaction, for example, first, a bis (halogenated methyl) compound, more specifically, for example, 2,5-dioctyloxy-p-xylylene dibromide is converted to N, N- A phosphonium salt is synthesized by reacting with triphenylphosphine in a dimethylformamide solvent, and this is condensed with a dialdehyde compound, more specifically, for example, terephthalaldehyde using, for example, lithium ethoxide in ethyl alcohol. By the Wittig reaction, a polymeric fluorescent substance containing a phenylene vinylene group and a 2,5-dioctyloxy-p-phenylene vinylene group is obtained. At this time, in order to obtain a copolymer, two or more kinds of diphosphonium salts and / or two or more kinds of dialdehyde compounds may be reacted.
When these polymeric fluorescent substances are used as a material for forming a light emitting layer, the purity affects the light emission characteristics. Therefore, it is desirable to carry out a purification treatment such as reprecipitation purification and fractionation by chromatography after synthesis.
As the material for forming the light emitting layer made of the above-described polymeric fluorescent material, light emitting layer forming materials of three colors of red, green, and blue are used for full color display.
[0074]
Further, when the light emitting layer described above is formed, the material may be formed of a host / guest light emitting material, that is, a light emitting material in which a guest material is added and dispersed in the host material.
As such a light emitting material, for example, a high molecular organic compound or a low molecular weight material as a host material, or a fluorescent dye or a phosphorescent material for changing the light emitting characteristics of a light emitting layer obtained as a guest material is used. Preferably used.
As the polymer organic compound, in the case of a material having low solubility, for example, after a precursor is applied, the polymer organic compound becomes a conjugated polymer organic electroluminescence layer by being heated and cured as shown in the following chemical formula (3). Some can produce a light emitting layer. For example, in the case of a sulfonium salt as a precursor, there are those in which a sulfonium group is eliminated by heat treatment to become a conjugated polymer organic compound.
In addition, some highly soluble materials can be used as a light emitting layer by applying the material as it is and then removing the solvent.
[0075]
[Chemical formula 2]

[0076]
The polymer organic compound is solid and has strong fluorescence, and can form a uniform solid ultrathin film. In addition, it has high forming ability and high adhesion to the ITO electrode, and further, after solidification, forms a strong conjugated polymer film.
[0077]
As such a high molecular organic compound, for example, polyarylene vinylene is preferable. Since polyarylene vinylene is soluble in an aqueous solvent or an organic solvent, it can be easily prepared into a coating solution when applied to the second substrate 11, and can be polymerized under certain conditions. A high-quality thin film can be obtained.
Examples of such polyarylene vinylene include PPV (poly (para-phenylene vinylene)), MO-PPV (poly (2,5-dimethoxy-1,4-phenylene vinylene)), CN-PPV (poly (2,5 -Bishexyloxy-1,4-phenylene- (1-cyanovinylene))), MEH-PPV (poly [2-methoxy-5- (2′-ethylhexyloxy)]-para-phenylenevinylene), etc. , Poly (alkylthiophene) such as PTV (poly (2,5-thienylene vinylene)), PFV (poly (2,5-furylene vinylene)), poly (paraphenylene), polyalkylfluorene, and the like. Among them, those composed of precursors of PPV or PPV derivatives as shown in chemical formula (4), and polymers as shown in chemical formula (5) Rukirufluorene (specifically, a polyalkylfluorene copolymer as shown in chemical formula (6)) is particularly preferred.
Since PPV or the like is a conductive polymer having strong fluorescence and π electrons forming a double bond being nonpolarized on the polymer chain, a high-performance organic electroluminescence device can be obtained.
[0078]
[Chemical 3]

[0079]
[Formula 4]

[0080]
[Chemical formula 5]

[0081]
In addition to the PPV thin film, a high molecular organic compound or a low molecular material capable of forming a light emitting layer, that is, a material used as a host material in this example is, for example, an aluminum quinolinol complex (Alq ₃ ), Distyrylbiphenyl, and BeBq represented by chemical formula (7) ₂ And Zn (OXZ) ₂ In addition to conventionally used ones such as TPD, ALO, and DPVBi, pyrazoline dimer, quinolidinecarboxylic acid, benzopyrylium perchlorate, benzopyranoquinolidine, rubrene, phenanthroline europium complex, etc. The composition for organic electroluminescent elements which is mentioned and contains these 1 type (s) or 2 or more types can be used.
[0082]
[Chemical 6]

[0083]
On the other hand, examples of the guest material added to such a host material include fluorescent dyes and phosphorescent substances as described above. In particular, the fluorescent dye can change the light emission characteristics of the light emitting layer, and is effective, for example, as a means for improving the light emission efficiency of the light emitting layer or changing the light absorption maximum wavelength (light emission color). That is, the fluorescent dye can be used not only as a light emitting layer material but also as a dye material having a light emitting function itself. For example, the energy of exciton generated by carrier recombination on a conjugated polymer organic compound molecule can be transferred onto the fluorescent dye molecule. In this case, since light emission occurs only from fluorescent dye molecules having high fluorescence quantum efficiency, the current quantum efficiency of the light emitting layer is also increased. Therefore, by adding a fluorescent dye to the material for forming the light emitting layer, the emission spectrum of the light emitting layer simultaneously becomes that of the fluorescent molecule, which is effective as a means for changing the emission color.
[0084]
The current quantum efficiency here is a scale for considering the light emission performance based on the light emission function, and is defined by the following equation.
ηE = emitted photon energy / input electric energy
Then, by converting the light absorption maximum wavelength by doping the fluorescent dye, for example, three primary colors of red, blue, and green can be emitted, and as a result, a full color display can be obtained.
Furthermore, the luminous efficiency of the electroluminescence element can be significantly improved by doping with a fluorescent dye.
[0085]
As the fluorescent dye, in the case of forming a light emitting layer that emits red colored light, it is preferable to use the laser dye DCM-1, rhodamine or rhodamine derivative, penylene, or the like. A light emitting layer can be formed by doping a host material such as PPV with these fluorescent dyes. However, since many of these fluorescent dyes are water-soluble, they are added to a sulfonium salt that is a water-soluble PPV precursor. Doping and then heat treatment makes it possible to form a more uniform light emitting layer. Specific examples of such fluorescent dyes include rhodamine B, rhodamine B base, rhodamine 6G, rhodamine 101 perchlorate and the like, and a mixture of two or more thereof may be used.
[0086]
Moreover, when forming the light emitting layer which emits green colored light, it is preferable to use quinacridone, rubrene, DCJT and derivatives thereof. For these fluorescent dyes, a light emitting layer can be formed by doping a host material such as PPV as in the case of the above fluorescent dyes. However, since these fluorescent dyes are often water-soluble, they are water-soluble. If a sulfonium salt, which is a PPV precursor, is doped and then heat-treated, a more uniform light emitting layer can be formed.
[0087]
Furthermore, when forming a light emitting layer that emits blue colored light, it is preferable to use distyrylbiphenyl and its derivatives. For these fluorescent dyes, a light emitting layer can be formed by doping a host material such as PPV as in the case of the above fluorescent dyes. However, since these fluorescent dyes are often water-soluble, they are water-soluble. If a sulfonium salt, which is a PPV precursor, is doped and then heat-treated, a more uniform light emitting layer can be formed.
[0088]
In addition, examples of other fluorescent dyes having blue colored light include coumarin and derivatives thereof. These fluorescent dyes are compatible with PPV and can easily form a light emitting layer. Among these, particularly, coumarin is insoluble in a solvent itself, but there are some which become soluble in a solvent by increasing the solubility by appropriately selecting a substituent. Specific examples of such fluorescent dyes include coumarin-1, coumarin-6, coumarin-7, coumarin 120, coumarin 138, coumarin 152, coumarin 153, coumarin 311, coumarin 314, coumarin 334, coumarin 337, coumarin 343 and the like. Is mentioned.
[0089]
Furthermore, examples of the fluorescent dye having another blue colored light include tetraphenylbutadiene (TPB) or a TPB derivative, DPVBi, and the like. These fluorescent dyes are soluble in an aqueous solution in the same manner as the red fluorescent dye and the like, have good compatibility with PPV, and can easily form a light emitting layer.
About the above fluorescent dye, only 1 type may be used for each color, and 2 or more types may be mixed and used for it.
In addition, as such a fluorescent dye, those shown in chemical formula (8), those shown in chemical formula (9), and those shown in chemical formula (10) are used.
[0090]
[Chemical 7]

[0091]
[Chemical 8]

[0092]
[Chemical 9]

[0093]
About these fluorescent dyes, it is preferable to add 0.5-10 wt% by the method mentioned later with respect to the host material consisting of the said conjugated polymer organic compound etc., and adding 1.0-5.0 wt%. More preferred. If the amount of fluorescent dye added is too large, it will be difficult to maintain the weather resistance and durability of the light-emitting layer obtained. On the other hand, if the amount added is too small, the effects of adding the fluorescent dye as described above will be sufficiently obtained. Because there is no.
[0094]
Further, as a phosphor as a guest material added to the host material, Ir (ppy) represented by the chemical formula (11) ₃ , Pt (thpy) ₂ , PtOEP and the like are preferably used.
[0095]
[Chemical Formula 10]

[0096]
Note that in the case where the phosphor represented by the chemical formula (11) is used as a guest material, as the host material, CBP, DCTA, TCPB represented by the chemical formula (12), or the above-described DPVBi, Alq ₃ Are preferably used.
Further, both the fluorescent dye and the phosphor may be added to the host material as a guest material.
[0097]
Embedded image

[0098]
When the above-described light emitting layer is formed using such a host / guest luminescent material, the host material and the guest material are simultaneously ejected at a preset ratio so that a desired amount of guest material is applied to the host material. A light emitting layer can be formed using a light emitting material to which is added.
[0099]
In the above-described example, the hole transport layer is formed as the lower layer of the light emitting layer, and the electron transport layer is formed as the upper layer. However, the present invention is not limited to this, for example, the hole transport layer and the electron transport layer. May be formed, or a hole injection layer may be formed instead of the hole transport layer, and only the light emitting layer may be formed alone. Good.
[0100]
Furthermore, in addition to the hole injection layer, the hole transport layer, the light emitting layer, and the electron transport layer, a hole blocking layer may be formed, for example, on the counter electrode side of the light emitting layer to extend the life of the light emitting layer. As a material for forming such a hole blocking layer, for example, BCP represented by the chemical formula (13) and BAlq represented by the chemical formula (14) are used, but BAlq is preferable in terms of extending the life.
[0101]
Embedded image

[0102]
Embedded image

[0103]
10 to 15 show examples of the electronic apparatus of the present invention.
The electronic apparatus of this example includes the light emitting device of the present invention such as the organic EL display device described above as a display unit.
FIG. 10 shows an example of a display device that displays television images and characters and images sent by a computer. In FIG. 10, reference numeral 1000 denotes a display device body using the light emitting device of the present invention. In addition, the display apparatus main body 1000 can respond also to a large screen by using the organic EL display apparatus mentioned above.
FIG. 11 shows an example of a vehicle-mounted navigation device. In FIG. 11, reference numeral 1010 indicates a navigation apparatus body, and reference numeral 1011 indicates a display unit (display means) using the light emitting device of the present invention.
FIG. 12 shows an example of a portable image recording apparatus (video camera). In FIG. 12, reference numeral 1020 denotes a recording apparatus main body, and reference numeral 1021 denotes a display unit using the light emitting device of the present invention.
FIG. 13 shows an example of a mobile phone. In FIG. 13, reference numeral 1030 denotes a mobile phone body, and reference numeral 1031 denotes a display unit (display means) using the light emitting device of the present invention.
FIG. 14 shows an example of an information processing apparatus such as a word processor or a personal computer. In FIG. 14, reference numeral 1040 denotes an information processing apparatus, reference numeral 1041 denotes an information processing apparatus body, reference numeral 1042 denotes an input unit such as a keyboard, and reference numeral 1043 denotes a display unit using the light emitting device of the present invention.
FIG. 15 shows an example of a wristwatch type electronic device. In FIG. 15, reference numeral 1050 denotes a watch body, and reference numeral 1051 denotes a display unit using the light emitting device of the present invention.
Since the electronic devices shown in FIGS. 10 to 15 include the light emitting device of the present invention as display means, the chromaticity of light to be observed is optimized and good display performance can be obtained.
[0104]
As mentioned above, although the suitable Example concerning this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.
[0105]
【The invention's effect】
According to the light emitting device of the present invention, the chromaticity of the light emitted from the light emitting layer is corrected by the optical functional film disposed on the side opposite to the light extraction side, thereby optimizing the chromaticity of the light. It is done. Moreover, even if it is a case where chromaticity correction | amendment of light is performed by performing chromaticity correction | amendment only with respect to the one part light of the light emitted from the light emitting layer, a luminance fall can be suppressed. Thereby, the light extraction efficiency can be increased.
[0106]
Furthermore, according to the method for manufacturing a light emitting device of the present invention, it is possible to manufacture a light emitting device in which a decrease in luminance is suppressed and the chromaticity of light is optimized.
[0107]
In addition, according to the electronic apparatus of the present invention, since the light emitting device with optimized light chromaticity is provided, display performance can be improved.
[Brief description of the drawings]
FIG. 1 is a diagram conceptually showing an organic EL display device according to an embodiment of a light emitting device of the present invention.
FIG. 2 is a diagram conceptually illustrating another embodiment in which the light-emitting device of the present invention is applied to an organic EL display device.
FIG. 3 is a circuit diagram illustrating an example of a circuit structure of an organic EL display device.
FIG. 4 is a plan view illustrating an example of a planar structure of a pixel portion in an organic EL display device.
FIG. 5 is an enlarged view showing a cross-sectional structure of a pixel portion (organic EL element).
FIG. 6 is a diagram for explaining an example in which the method for manufacturing an electro-optical device according to the invention is applied to a process for manufacturing a display device including an organic EL element.
FIG. 7 is a diagram for explaining an example in which the method for manufacturing an electro-optical device according to the invention is applied to a process for manufacturing a display device including an organic EL element.
FIG. 8 is a diagram for explaining an example in which the method for manufacturing an electro-optical device according to the invention is applied to a process for manufacturing a display device including an organic EL element.
FIG. 9 is a diagram for explaining an example in which the method for manufacturing an electro-optical device according to the invention is applied to a process for manufacturing a display device including an organic EL element.
FIG. 10 is a diagram illustrating an example of an electronic apparatus according to the invention.
FIG. 11 is a diagram showing another embodiment of the electronic apparatus of the invention.
FIG. 12 is a diagram showing another embodiment of the electronic apparatus of the invention.
FIG. 13 is a diagram showing another embodiment of the electronic apparatus of the invention.
FIG. 14 is a diagram showing another embodiment of the electronic apparatus of the invention.
FIG. 15 is a diagram showing another embodiment of the electronic apparatus of the invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Organic EL display device (light emitting device), 11 ... Substrate, 13 ... Anode (pixel electrode, electrode layer), 14 ... Light emitting layer, 16 ... Cathode (counter electrode, electrode layer), 20 ... Chromaticity correction film (optical) Functional film), 21 ... reflective layer.

Claims (14)

A light emitting layer including three types of light emitting layers corresponding to red, green and blue,
A reflective layer that is disposed on the side opposite to the side from which the emitted light of the light emitting layer is extracted and reflects light from the light emitting layer;
A light-absorbing optical function film that is disposed between the light-emitting layer and the reflective layer with respect to at least one light-emitting layer of the three types of light-emitting layers, and changes a wavelength of the emitted light;
Equipped with a,
With respect to the light emitting layer, an electrode that transmits the light emitted from the light emitting layer is disposed on the side opposite to the light emitting light extraction side,
The light emitting layer is formed so as to be surrounded by a bank layer,
The optical functional film is disposed with the electrode sandwiched between the light emitting layer and disposed in a recess formed following a step between the light emitting layer and the bank layer. A light emitting device. The light-emitting device according to claim 1.
The optical function film is disposed separately for each of red, green, and blue colors. The light-emitting device according to claim 2 .
The optical functional film is formed on a part of the electrode,
The light-emitting device, wherein the reflective layer has conductivity and is in contact with the electrode in a region where the optical functional film is not formed. The light emitting device according to any one of claims 1 to 3 ,
The light emitting device, wherein the optical functional film protects the light emitting layer from a predetermined substance. The light emitting device according to any one of claims 1 to 4 ,
The light emitting device, wherein the optical functional film includes a color filter including a light absorbing pigment. The light emitting device according to any one of claims 1 to 5 ,
The light emitting device, wherein the light emitting layer is an organic EL layer. A light emitting layer including three types of light emitting layers corresponding to red, green and blue,
A reflective layer that is disposed on the side opposite to the side from which the emitted light of the light emitting layer is extracted and reflects light from the light emitting layer;
A light absorption chromaticity correction film that is disposed between the light emitting layer and the reflective layer and corrects the chromaticity of the emitted light with respect to at least one of the three types of light emitting layers. When,
Equipped with a,
With respect to the light emitting layer, an electrode that transmits the light emitted from the light emitting layer is disposed on the side opposite to the light emitting light extraction side,
The light emitting layer is formed so as to be surrounded by a bank layer,
The chromaticity correction film is disposed with the electrode sandwiched between the light emitting layer and disposed in a recess formed following a step between the light emitting layer and the bank layer. A light emitting device characterized. The light-emitting device according to claim 7 .
The optical function film is disposed separately for each of red, green, and blue colors. The light-emitting device according to claim 8 .
The chromaticity correction film is formed on a part of the electrode,
The light-emitting device, wherein the reflective layer has conductivity and is in contact with the electrode in a region where the chromaticity correction film is not formed. The light emitting device according to any one of claims 7 to 9 ,
The light emitting device, wherein the chromaticity correction film protects the light emitting layer from a predetermined substance. The light emitting device according to any one of claims 7 to 10 ,
The optical functional film has three types of optical functional films corresponding to red, green, and blue, respectively, or an optical functional film corresponding to one of red, green, and blue is omitted. A light emitting device characterized. The light emitting device according to any one of claims 7 to 11 ,
The light emitting device, wherein the light emitting layer is an organic EL layer. The light emitting device according to any one of claims 7 to 12 ,
The light emitting device, wherein the chromaticity correction film is a color filter. An electronic apparatus comprising the light emitting device according to claim 1 .

Images