JP2006065325A - Circuit substrate, electro-optical device and electronic appliance - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To stably operate active elements such as transistors and to enable a display device to have a wide screen and to be stably operated for a long period of time. <P>SOLUTION: The electro-optical device (1) comprises an electro-optical element interposed between a cathode (222) and an anode (23) and disposed on the substrate (2), active elements (24) driving the electro-optical element, and insulating films (283 and 284) comprising an insulating material interposed between at least one of the cathode (222) and anode (23) and substrate (2) and having a dielectric constant smaller than a prescribed value. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a circuit board, an electro-optical device, and an electronic apparatus.

  Examples of the display device include a liquid crystal element and an electro-optical device such as a liquid crystal display device including an organic EL (Electro Luminescence) element and an organic EL display device. In particular, the organic EL display device is excellent in display performance because it is self-luminous with high brightness, can be driven by a DC low voltage, and has a high response speed. In addition, the display device can be reduced in thickness, weight, and power consumption.

  The organic EL display device has a structure in which a light emitting layer containing a light emitting substance is sandwiched between electrode layers of an anode and a cathode. Then, a phenomenon is utilized in which holes injected from the anode side and electrons injected from the cathode side are recombined in a light emitting layer having a light emitting ability and light is emitted when the excited state is lost. The luminance of the organic EL display device is controlled by a drive current supplied to the organic EL element in accordance with the data signal (see, for example, Patent Document 1).

International Publication No. WO98 / 36407 Pamphlet

  By the way, it is known that in an electro-optical device, a data rewriting operation or the like is hindered by a parasitic capacitance generated between conductive parts such as wirings and electrodes. The inter-wiring capacitance depends on the wiring length and increases as the wiring length increases. For example, when the electro-optical device is used as a display device, it has been a cause of hindering the enlargement of the screen.

  In recent years, in a semiconductor device such as a memory, there is a problem of a capacitance generated between conductive portions such as wirings under the present situation where high integration and high speed operation are required at the same time.

  The present invention has been made in view of the above problems, and is a circuit board capable of stably operating active elements such as transistors and diodes, an electro-optical device capable of a large screen and stably operating over a long period of time. And it aims at providing the electronic device using these.

A circuit board according to the present invention includes an insulating substrate, an active element disposed above the substrate, an electric signal for driving the active element, or a wiring for supplying driving power for driving the active element, A first insulating film; a second insulating film formed above the first insulating film; and an electrode formed above the second insulating film; the active element and the electrode Are connected through at least a contact hole provided over the first insulating film and the second insulating film, and the dielectric constant of the first insulating film is lower than the dielectric constant of the substrate It is characterized by.
Another circuit board according to the present invention includes an active element disposed above the substrate, an electric signal for driving the active element or a wiring for supplying driving power for driving the active element, and a first insulating film A second insulating film formed above the first insulating film, and an electrode formed above the second insulating film, wherein the active element is a transistor, The included semiconductor film is connected to the electrode through a contact hole provided at least over the first insulating film and the second insulating film, and the dielectric constant of the first insulating film is the substrate. It is characterized by being lower than the dielectric constant.

  The circuit board preferably further includes a third insulating film disposed between the substrate and the first insulating film.

  In the circuit board, it is preferable that the second insulating film functions as a protective layer that suppresses deterioration of the active element.

  In the above circuit board, it is preferable that the active element is a transistor, and the semiconductor film of the transistor is covered with the third insulating film.

  In the above circuit board, the first insulating film preferably has a dielectric constant of 3 or less, and more preferably has a dielectric constant of 2.5 or less.

  The circuit board may further include a fourth insulating film provided between the second insulating film and the electrode.

  In the above circuit board, the insulating material included in the first insulating film may be at least one of a porous body, airgel, porous silica, magnesium fluoride, a fluorine-based polymer, and a porous polymer. .

  In the above circuit board, the insulating material included in the first insulating film is any one of silica glass, alkylsiloxane polymer, alkylsilsesquioxane polymer, hydrogenated alkylsilsesquioxane polymer, and polyaryl ether. It may be at least one of a spin-on glass film, a diamond film, and a fluorinated amorphous carbon film.

  In the circuit board, the first insulating film may include at least one of inorganic fine particles and organic fine particles in a predetermined material.

  In the above circuit board, the first insulating film may include a gel in which fine particles of magnesium fluoride are dispersed.

  In the above circuit board, it is preferable that the second insulating film covers the active element.

  In the circuit board, it is preferable that the second insulating film contains at least one of a desiccant and a chemical adsorbent.

  In the above circuit board, the second insulating film may include at least one of ceramic, silicon nitride, silicon oxynitride, and silicon oxide.

  In the above circuit board, the second insulating film includes boron, carbon, nitrogen, aluminum, phosphorus, silicon, cerium, ytterbium, samarium, erbium, yttrium, lanthanum, gadolinium, dysprosium, neodymium, oxygen, barium oxide, and oxide. At least one of calcium, activated carbon, and zeolite may be included.

In the above circuit board, the fourth insulating film preferably has a dielectric constant of 4 or less.

  In the above circuit board, it is more preferable that the dielectric constant of the fourth insulating film is 3.5 or less.

  An electro-optical device can be configured by combining the circuit board and the electro-optical element.

  The electro-optical device according to the invention includes a substrate, an electro-optical element provided between the first electrode and the second electrode formed above the substrate, the first electrode, and the substrate. A first insulating film provided between the first insulating film, a second insulating film formed between the first insulating film and the first electrode, and the first insulating film and the substrate. And a dielectric constant of the first insulating film is 4 or less.

  Another electro-optical device according to the present invention includes a substrate, an electro-optical element provided between the first electrode and the second electrode formed above the substrate, the first electrode, A first insulating film provided between the substrate, a second insulating film formed between the first insulating film and the first electrode, the first insulating film and the substrate; And a third insulating film disposed between the first insulating film and the dielectric constant of the first insulating film is 3 or less.

  The electro-optical device may further include an active element that drives the electro-optical element.

  In the electro-optical device, it is preferable that the second insulating film protects the active element from mobile ions or moisture.

  In the above electro-optical device, it is preferable that the second insulating film contains at least one of a desiccant and a chemical adsorbent.

  In the above electro-optical device, it is preferable that the second insulating film is made of at least one of ceramic, silicon nitride, silicon oxynitride, and silicon oxide.

  In the electro-optical device, the second insulating film includes boron, carbon, nitrogen, aluminum, phosphorus, silicon, cerium, ytterbium, samarium, erbium, yttrium, lanthanum, gadolinium, dysprosium, neodymium, oxygen, barium oxide, It is preferable to include at least one of calcium oxide, activated carbon, and zeolite.

  In the above electro-optical device, the electro-optical element may be an organic electroluminescence element.

  The electro-optical device further includes a sealing layer formed above the second electrode, and the sealing layer is made of at least one of ceramic, silicon nitride, silicon oxynitride, and silicon oxide. It is preferable to become.

  In the above electro-optical device, it is preferable that a protective film is provided above the second electrode.

  In the above electro-optical device, the protective film may contain at least one of a desiccant and a chemical adsorbent.

  In the above electro-optical device, it is preferable that light emitted from the electro-optical element is extracted from the substrate side to the outside of the electro-optical device.

  An electronic apparatus can be configured from the circuit board or the electro-optical device.

  Another circuit board according to the present invention includes an insulating board, an active element disposed above the board, wiring for supplying an electric signal or driving power for driving the active element, and an insulating material. And a dielectric constant of the insulating material is lower than a dielectric constant of the substrate.

  According to the present invention, the insulating film that insulates between the electrodes of the active element or between the wirings connected to the electrodes includes the insulating film made of an insulating material having a dielectric constant of a predetermined value or less. The parasitic capacitance generated between the wirings or between the wirings can be reduced. Thereby, the isolation between the drive signals supplied to the active elements is ensured, and the active elements can be driven with high accuracy. Further, since the parasitic capacitance is reduced, the active element can be operated by a drive signal having a higher frequency. Examples of the active element include a semiconductor element such as a transistor and a two-terminal element such as MIM.

  The active element of the circuit board may be a transistor.

  In the above circuit board, the dielectric constant of the insulating material is preferably 4 or less, more preferably 3 or less, and even more preferably 2.5 or less.

  In another circuit board of the present invention, in the above invention, the insulating material is a porous body, aerogel, porous silica, magnesium fluoride or a material containing this, a gel in which fine particles of magnesium fluoride are dispersed, a fluoropolymer, or Spin-on glass containing at least one of a material containing the same, a porous polymer having a branched structure, silica glass, alkylsiloxane polymer, alkylsilsesquioxane polymer, hydrogenated alkylsilsesquioxane polymer, polyarylether A film, a material containing a predetermined material containing at least one of inorganic fine particles and organic fine particles.

  According to another aspect of the present invention, there is provided a circuit board including a protective layer formed so as to cover an active element.

  According to the present invention, since the protective layer is formed so as to cover the active element, it is possible to prevent the active element from being deteriorated due to intrusion of a metal component, gas in the atmosphere, moisture and the like.

  According to another circuit board of the present invention, in the above invention, the protective layer is at least one of a material containing at least one of a desiccant and a chemical adsorbent, ceramic, silicon nitride, silicon oxynitride, and silicon oxide. A material containing at least one of boron, carbon, nitrogen and at least one of aluminum, phosphorus, silicon, cerium, ytterbium, samarium, erbium, yttrium, lanthanum, gadolinium, dysprosium, neodymium And a material containing at least one of aluminum, silicon, nitrogen, oxygen, barium oxide, calcium oxide, activated carbon, zeolite, and the like.

  Another electro-optical device of the present invention is an electro-optical device including an electro-optical element disposed above a substrate sandwiched between a cathode and an anode, wherein at least one of the cathode and the anode An insulating film made of an insulating material having a dielectric constant of a predetermined value or less is disposed between the substrate and the substrate.

  According to this invention, the insulating film made of an insulating material having a dielectric constant of a predetermined value or less is disposed between at least one of the cathode and the anode that sandwich the electro-optic element and the substrate. The parasitic capacitance generated between the electrodes can be reduced. Thereby, the isolation between the drive signals supplied to the electro-optical element is ensured, and the electro-optical element can be driven with high accuracy. Further, since the parasitic capacitance is reduced, the electro-optical element can be driven by a drive signal having a higher frequency. Note that either a passive driving method or an active driving method can be adopted as a driving method of the electro-optical device. Examples of the electro-optical element include an organic EL element, an inorganic EL element, a liquid crystal element, an electrophoretic element, a laser diode, and an electron emitting element.

  According to another electro-optical device of the present invention, in the above invention, the electro-optical device includes an active element that drives the electro-optical element.

  According to the present invention, an active matrix type electro-optical device using active elements can be configured, and a brighter electro-optical device with excellent responsiveness can be realized. Examples of the active element include a semiconductor element such as a transistor and a two-terminal element such as MIM.

  The substrate of the electro-optical device may be formed of an insulator material.

  The active element of the electro-optical device may be a transistor.

  The dielectric constant of the insulating film of the electro-optical device is preferably 4 or less, more preferably 3 or less, and even more preferably 2.5 or less.

  In the above electro-optical device, the insulating material may be a porous body, aerogel, porous silica, magnesium fluoride or a material containing the same, a gel in which fine particles of magnesium fluoride are dispersed, a fluorine-based polymer or a material containing the same, Porous polymer having a branched structure, silica glass, alkylsiloxane polymer, alkylsilsesquioxane polymer, hydrogenated alkylsilsesquioxane polymer, spin-on glass film containing at least one of polyarylether, predetermined material In addition, a material containing at least one of inorganic fine particles and organic fine particles can be used.

  The electro-optical device according to the invention includes the first protective layer formed so as to cover the active element in the above invention.

  According to the present invention, since the first protective layer is formed so as to cover the active element, the active element is prevented from entering from the outside, such as a metal component, gas in the atmosphere, and moisture, and the active element is deteriorated. Can be prevented.

  The electro-optical device according to the invention includes the second protective layer formed so as to cover the cathode in the above invention.

  According to the present invention, since the second protective layer is formed so as to cover the upper side of the cathode, the entry of the metal component, gas in the atmosphere, moisture and the like from the outside to the electro-optical element is prevented, and the electro-optical element Can be prevented.

  In the electro-optical device according to the aspect of the invention, in the above invention, at least one of the first and second protective layers is a material containing at least one of a desiccant and a chemical adsorbent, ceramic, silicon nitride, Silicon oxynitride, material containing at least one of silicon oxide, material containing at least one of boron, carbon, nitrogen and at least one of aluminum, phosphorus, silicon, cerium, ytterbium, samarium, erbium, yttrium, It is made of at least one of lanthanum, gadolinium, dysprosium, and neodymium and a material containing at least one of aluminum, silicon, nitrogen, and oxygen, barium oxide, calcium oxide, activated carbon, and zeolite.

  In the above electro-optical device, the electro-optical element may be an organic electroluminescence element.

  According to the present invention, it is possible to realize a display device that is not limited to low voltage driving and a viewing angle by using an organic electroluminescence element as an electro-optic element.

  According to another aspect of the invention, there is provided an electronic apparatus including the above circuit board or the above electro-optical device.

  According to the present invention, by reducing the parasitic capacitance, for example, it is possible to realize an electronic device that can perform a stable display operation with good followability with respect to an input signal having a high frequency.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic plan view of a wiring structure of an electro-optical device suitable as a display device according to the present embodiment.

  The electro-optical device according to the present embodiment uses a thin film transistor (TFT) and an organic electroluminescence element (hereinafter referred to as an organic EL element) as an active element and an electro-optical element, respectively. This is an active matrix type organic EL display device.

  In this figure, the electro-optical device 1 includes a plurality of scanning lines 131 (wirings), a plurality of signal lines 132 (wirings) extending in a direction intersecting the scanning lines 131, and a plurality of light emitting elements extending in parallel to the signal lines 132. The power source wiring 133 (wiring) is wired, and a pixel region A is provided corresponding to each intersection of the scanning line 131 and the signal line 132.

  Each signal line 132 is connected to a data line driving circuit 90 including a shift register, a level shifter, a video line, and an analog switch. On the other hand, each scanning line 131 is connected to a scanning line driving circuit 80 having a shift register and a level shifter.

  In each of the pixel regions A, a switching TFT 22 to which a scanning signal is supplied to the gate electrode via the scanning line 131 and a storage capacitor cap for holding an image signal supplied from the signal line 132 via the switching TFT 22 And the current TFT 24 to which the image signal held by the holding capacitor cap is supplied to the gate electrode, and the drive current from the light emission power supply line 133 when electrically connected to the light emission power supply line 133 via the current TFT 24. A pixel electrode 23 (anode) that flows in and an organic EL element 3 that is sandwiched between the pixel electrode 23 and the cathode 222 are provided.

  In the electro-optical device 1 configured as described above, when the TFT 22 is turned on by being driven by the scanning line 131, the potential of the signal line 132 at that time is held in the holding capacitor cap. The conduction state is determined. Then, a drive current is supplied from the light-emitting power supply wiring 133 to the organic EL element 3 through the pixel electrode 23 with a current amount corresponding to the conduction state of the current TFT. The light emission intensity of the organic EL element 3 is determined according to the amount of current supplied to the organic EL element 3.

  FIG. 2 is an enlarged plan view of the pixel region A in a state where the cathode 222 and the organic electroluminescence element 3 are removed. In this figure, each pixel region has an arrangement in which the four sides of a pixel electrode 23 having a rectangular planar shape are surrounded by a scanning line 131, a signal line 132, a light-emitting power supply wiring 133, and other pixel electrode scanning lines 131. It has become. Note that the shape of the pixel electrode 23 is not limited to a rectangle, but may be other shapes. For example, when a charge transport layer such as a light emitting layer or an electron or hole transport layer constituting the organic EL element 3 is formed using a liquid phase process such as an ink jet method, the above layer is uniformly formed above the pixel electrode 23. In order to form, it is preferable to have a rounded or oval shape.

  Next, a cross-sectional structure of the electro-optical device 1 will be described with reference to FIG.

  3 is a cross-sectional view taken along line AA in FIG. In this figure, an electro-optical device 1 includes a substrate 2, a pixel electrode 23 made of a transparent electrode material such as indium tin oxide (ITO), and an organic EL element 3 disposed on the pixel electrode 23. A cathode 222 disposed so as to sandwich the organic EL element 3 between the pixel electrode 23 and a current TFT 24 formed on the substrate 2 as an energization control unit for controlling energization of the pixel electrode 23. ing. Further, a sealing layer 20 (second protective layer) is provided on the upper layer of the cathode 222. The cathode 222 is made of at least one metal selected from aluminum (Al), magnesium (Mg), gold (Au), silver (Ag), and calcium (Ca). The cathode 222 includes alloys of the above-described materials and stacked ones. The current TFT 24 operates based on an operation command signal from the scanning line driving circuit 80 and the data line driving circuit 90, and controls energization to the pixel electrode 23.

  The light-emitting element 3 includes a hole transport layer 70 that can transport holes from the anode 23, a light-emitting layer 60 that includes an organic EL material that is one of electro-optical materials, and electrons provided on the top surface of the light-emitting layer 60. The transport layer 50 is schematically configured. A cathode (counter electrode) 222 is disposed on the upper surface of the electron transport layer 50.

The TFT 24 is provided on the surface of the substrate 2 via a base protective layer 281 mainly composed of SiO ₂ . The TFT 24 includes a silicon layer 241 formed on the base protective layer 281, a gate insulating layer 282 provided on the base protective layer 281 so as to cover the silicon layer 241, and an upper surface of the gate insulating layer 282. A gate electrode 242 provided in a portion facing the silicon layer 241, a first interlayer insulating layer 283 (insulating film) provided on the gate insulating layer 282 so as to cover the gate electrode 242, a gate insulating layer 282, A source electrode 243 connected to the silicon layer 241 through a contact hole opened over the first interlayer insulating layer 283 and a position facing the source electrode 243 across the gate electrode 242 are provided. Drain electrode 2 connected to silicon layer 241 through a contact hole opened over interlayer insulating layer 283 4, a barrier layer 285 (protective layer, first protective layer) provided above the first interlayer insulating layer 283 so as to cover the source electrode 243 and the drain electrode 244, and a second layer provided further thereon. And an interlayer insulating layer 284 (insulating film).

  The pixel electrode 23 is disposed on the upper surface of the second interlayer insulating layer 284, and the pixel electrode 23 and the drain electrode 244 are connected to each other through a contact hole 23a that is opened over the second interlayer insulating layer 284 and the barrier layer 285. Has been. In addition, a third insulating layer 221 made of a synthetic resin or the like is provided between a portion of the surface of the second interlayer insulating layer 284 other than the portion where the organic EL element is provided and the cathode 222.

  Note that a region of the silicon layer 241 that overlaps with the gate electrode 242 with the gate insulating layer 282 interposed therebetween is a channel region. In the silicon layer 241, a source region is provided on the source side of the channel region, and a drain region is provided on the drain side of the channel region. Among these, the source region is connected to the source electrode 243 through a contact hole that opens over the gate insulating layer 282 and the first interlayer insulating layer 283. On the other hand, the drain region is connected to the drain electrode 244 made of the same layer as the source electrode 243 through a contact hole that extends through the gate insulating layer 282 and the first interlayer insulating layer 283. The pixel electrode 23 is connected to the drain region of the silicon layer 241 through the drain electrode 244.

  The material used for the substrate 2 is not particularly limited, but in this example, since the light emitted from the light emitting layer 60 is extracted from the substrate 2 side where the TFT 24 is provided (back emission type), it is transparent to transmit light. Alternatively, a translucent material such as transparent glass, quartz, sapphire, or a transparent synthetic resin such as polyester, polyacrylate, polycarbonate, polyether ketone, or the like is used. In particular, as a material for forming the substrate 2, inexpensive soda glass is preferably used. When soda glass is used, it is preferable to apply silica coating to the soda glass because it has the effect of protecting the soda glass that is weak against acid-alkali, and further improves the flatness of the substrate 2.

  In addition, a color filter film, a color conversion film containing a luminescent substance, or a dielectric reflection film may be disposed on the substrate 2 to control the emission color.

  On the other hand, when the configuration is such that the emitted light is extracted from the side opposite to the substrate 2 on which the TFT 22 is provided (top emission type), the substrate 2 may be opaque, in which case ceramic such as alumina, stainless steel, etc. A metal sheet such as surface oxidized or the like, a thermosetting resin, a thermoplastic resin, or the like can be used.

  When forming the base protective layer 281, the base protective layer 281 has a thickness of about 200 to 500 nm by forming a film on the substrate 2 by plasma CVD using TEOS (tetraethoxysilane) or oxygen gas as a raw material. A silicon oxide film is formed.

When forming the silicon layer 241, first, the temperature of the substrate 2 is set to about 350 ° C., and an amorphous silicon layer having a thickness of about 30 to 70 nm is formed on the surface of the base protective film 281 by plasma CVD or ICVD. Form. Next, a crystallization process is performed on the amorphous silicon layer by a laser annealing method, a rapid heating method, a solid phase growth method, or the like to crystallize the amorphous silicon layer into a polysilicon layer. In the laser annealing method, for example, a line beam having a beam length of 400 mm is used with an excimer laser, and the output intensity is set to 200 mJ / cm ² , for example. For the line beam, the line beam is scanned so that a portion corresponding to 90% of the peak value of the laser intensity in the short dimension direction overlaps each region. Next, the polysilicon layer is patterned by a photolithography method to form an island-shaped silicon layer 241.

  The silicon layer 241 serves as the channel region and the source / drain region of the current TFT 24 shown in FIG. 1. However, a semiconductor film serving as the channel region and the source / drain region of the switching TFT 22 is also formed at different cross-sectional positions. Has been. That is, the two types of TFTs 22 and 24 are formed at the same time, but are manufactured in the same procedure. Therefore, in the following description, only the current TFT 24 is described with respect to the TFT, and the description of the switching TFT 22 is omitted.

  When forming the gate insulating layer 282, a silicon oxide film having a thickness of about 60 to 150 nm is formed on the surface of the silicon layer 241 by using a plasma CVD method using TEOS or oxygen gas as a raw material. Alternatively, a gate insulating layer 282 made of a nitride film is formed. As a material of the gate insulating layer 282, a high dielectric material having a large dielectric constant is preferable.

  The gate electrode 242 is formed by forming a conductive film containing a metal such as aluminum, tantalum, molybdenum, titanium, or tungsten over the gate insulating layer 282 by sputtering and then patterning the conductive film.

  In order to form the source region and the drain region in the silicon layer 241, after forming the gate electrode 242, the gate electrode 242 is used as a patterning mask, and phosphorus ions are implanted in this state. As a result, high-concentration impurities are introduced in a self-aligned manner with respect to the gate electrode 242, so that a source region and a drain region are formed in the silicon layer 241. Note that a portion where no impurity is introduced becomes a channel region.

The first interlayer insulating layer 283 is a low dielectric constant layer made of a low dielectric constant material having a dielectric constant smaller than that of a general silicon oxide film (SiO ₂ film: dielectric constant = about 4), and is formed above the gate insulating layer 282. It is formed.

Examples of the material for forming the first interlayer insulating layer 283 include a porous body, airgel, porous silica, magnesium fluoride, a fluorine-based polymer, and a porous polymer. For example, the first interlayer insulating layer 283 made of a porous SiO ₂ film is formed by CVD (chemical vapor deposition) using Si ₂ H ₆ and O ₃ as reaction gases. When these reaction gases are used, SiO ₂ having large particles is formed in the gas phase, and is deposited on the gate insulating layer 282. Therefore, the first interlayer insulating layer 283 has many voids in the layer and becomes a porous body. And the 1st interlayer insulation layer 283 turns into a low dielectric constant layer by becoming a porous body.

Note that the surface of the first interlayer insulating layer 283 may be subjected to H (hydrogen) plasma treatment. Thereby, dangling bonds in Si—O bonds on the surface of the voids are replaced with Si—H bonds, and the moisture absorption resistance of the film is improved. Then, another SiO ₂ layer may be provided on the surface of the plasma-treated first insulating layer 283.

Further, the reaction gas for forming the first interlayer insulating layer 283 by the CVD _method, in addition to the Si ₂ H 6 + _O3, as _{Si 2 H 6 + O 2,} Si 3 H 8 + O 3, Si 3 H 8 + O 2 Also good. Furthermore, in addition to the above reaction gas, a reaction gas containing B (boron) or a reaction gas containing F (fluorine) may be used.

When forming the first interlayer insulating layer 283 as a porous material, and the SiO ₂ film having a porosity, by laminating a SiO ₂ film formed by normal pressure chemical vapor deposition, quality stability The first interlayer insulating layer 283 as a porous body can also be formed. These films can be laminated by generating plasma intermittently or periodically in an atmosphere of SiH ₄ and O 2 under reduced pressure. Specifically, the first interlayer insulating layer 283 accommodates the substrate 2 in a predetermined chamber and uses, for example, SiH ₄ and O ₂ as reaction gases while maintaining the temperature at 400 ° C., and applies an RF voltage (high frequency voltage). It is formed by applying to the chamber. During film formation, the SiH ₄ flow rate and the O ₂ flow rate are constant, whereas the RF voltage is applied to the chamber at a cycle of 10 seconds. As a result, plasma is generated and extinguished at a cycle of 10 seconds. In this way, by using time-varying plasma, a process using low-pressure CVD and a process using plasma CVD under reduced pressure can be repeatedly performed in one chamber. Then, by repeatedly performing low pressure CVD and plasma CVD under reduced pressure, a SiO ₂ film having a large number of voids in the film is formed. That is, the first interlayer insulating layer 283 has porosity.

The first interlayer insulating layer 283 can also be composed of airgel. The airgel is a light-transmitting porous body having a uniform ultrafine structure obtained by supercritical drying of a wet gel formed by a sol-gel reaction of a metal alkoxide. Aerogels include silica airgel and airgel based on alumina. Among these, silica aerogel is a material composed of fine SiO ₂ particles of several tens of nanometers in which voids occupy 90% or more of the volume, and the rest aggregates in a dendritic shape. Thus, silica airgel with a high porosity is effective as a low dielectric constant material.

  Silica airgel is manufactured through a step of producing a wet gel by a sol-gel method, a step of aging the wet gel, and a supercritical drying step of drying the wet gel by a supercritical drying method to obtain an airgel. The supercritical drying method is a method suitable for drying a gel material without contracting the gel by replacing and removing the liquid in the jelly-like gel material consisting of a solid phase and a liquid phase with a supercritical fluid. Thus, an airgel having a high porosity can be obtained.

For example, when the first interlayer insulating layer 283 is formed of silica aerogel, it is formed by coating the gate insulating layer 282 with wet gel, which is a raw material of airgel, using a spin coat method or the like, and performing supercritical drying. The By replacing the solvent in the wet gel with the supercritical fluid by the supercritical drying method using the supercritical fluid, the solvent in the wet gel is removed. The supercritical fluid includes carbon dioxide (CO ₂ ), alcohols such as methanol and ethanol, NH ₃ , H ₂ O, N ₂ O, methane, ethane, ethylene, propane, pentane, isopropanol, and isobutanol. , Cyclotrifluoromethane, monofluoromethane, cyclohexanol, and the like can be used.

When the low dielectric constant layer is formed of silica aerogel, a wet gel is applied on a substrate by spin coating or the like and then supercritical drying is performed. However, a synthetic resin (organic substance) may be mixed in the wet gel. The synthetic resin in this case is preferably a synthetic resin having a heat denaturation temperature higher than the critical temperature of the supercritical fluid and capable of transmitting light. For example, when alcohol is used as a supercritical fluid, the heat denaturation temperature is higher than the critical temperature of alcohol, and synthetic resins capable of transmitting light include hydroxylpropyl cellulose (HPC), polyvinyl butyral (PVB), and ethyl cellulose (EC). (In addition, PVB and EC are soluble in alcohol and insoluble in water). When ether is used as the solvent, chlorine-based polyethylene or the like is preferably selected as the resin, and when CO ₂ is used as the solvent, HPC or the like is preferably selected.

The low dielectric constant layer may be an airgel based on alumina in addition to silica aerogel, and may be a porous body having a dielectric constant lower than that of a general silicon oxide film (SiO ₂ film: dielectric constant = 4).

  The low dielectric constant layer may be porous silica, magnesium fluoride or a material containing the same. The low dielectric constant layer made of magnesium fluoride can be formed by sputtering. Alternatively, a gel in which fine particles of magnesium fluoride are dispersed may be used. Alternatively, it may be a fluorine-based polymer or a material containing the same, for example, a perfluoroalkyl-polyether, a perfluoroalkylamine, or a perfluoroalkyl-polyether-perfluoroalkylamine mixed film.

  The low dielectric constant layer may be a spin-on glass film (SOG) such as silica glass, alkylsiloxane polymer, alkylsilsesquioxane polymer, or hydrogenated alkylsilsesquioxane polymer. Alternatively, an organic polymer such as polyaryl ether, a diamond film, or a fluorinated amorphous carbon film may be used. The low dielectric constant layer made of the spin-on glass film can be formed by coating the material of the spin-on glass film using alcohol as a solvent on the gate insulating layer 282 using a spin coating method or the like, and evaporating the solvent by heat treatment or the like. is there. The above supercritical drying method can also be used when forming the spin-on glass film. Coverage and film quality can be further improved by using the supercritical drying method.

  Further, the low dielectric constant layer may be a mixture of a soluble or dispersible fluorocarbon compound in a predetermined polymer binder.

  As the polymer binder, polyvinyl alcohol, polyacrylic acid, polyvinyl pyrrolidone, polyvinyl sulfonic acid sodium salt, polyvinyl methyl ether, polyethylene glycol, poly α-trifluoromethyl acrylic acid, polyvinyl methyl ether-co-maleic anhydride, polyethylene glycol- Examples include co-propylene glycol and polymethacrylic acid.

  Examples of the fluorocarbon compound include perfluorooctanoic acid-ammonium salt, perfluorooctanoic acid-tetramethylammonium salt, perfluoroalkylsulfonic acid ammonium salt of C-7 and C-10, and perfluorooctanoic acid ammonium salt of C-7 and C-10. Examples include tetramethylammonium fluoroalkylsulfonic acid salts, fluorinated alkyl quaternary ammonium iodides, perfluoroadipic acid, and quaternary ammonium salts of perfluoroadipic acid.

  Furthermore, since a method of introducing voids as the low dielectric constant layer is effective, in addition to the airgel, fine particles may be used to form voids as microvoids between or within the fine particles. As the fine particles, inorganic fine particles or organic fine particles can be used for the low dielectric constant layer.

  The inorganic fine particles are preferably amorphous. The inorganic fine particles are preferably made of a metal oxide, nitride, sulfide or halide, more preferably a metal oxide or metal halide, and most preferably a metal oxide or metal fluoride. . As metal atoms, Na, K, Mg, Ca, Ba, Al, Zn, Fe, Cu, Ti, Sn, In, W, Y, Sb, Mn, Ga, V, Nb, Ta, Ag, Si, B Bi, Mo, Ce, Cd, Be, Pb and Ni are preferred, and Mg, Ca, B and Si are more preferred. An inorganic compound containing two kinds of metals may be used. A particularly preferred inorganic compound is silicon dioxide, ie silica.

  The microvoids in the inorganic fine particles can be formed, for example, by cross-linking silica molecules forming the particles. Crosslinking silica molecules reduces the volume and makes the particles porous. (Porous) inorganic fine particles having microvoids are described in the sol-gel method (described in JP-A Nos. 53-112732 and 57-9051) or the precipitation method (APPLIED OPTICS, 27, page 3356 (1988)). ) Can be directly synthesized as a dispersion. Further, the powder obtained by the drying / precipitation method can be mechanically pulverized to obtain a dispersion. Commercially available porous inorganic fine particles (for example, silicon dioxide sol) may be used.

  The organic fine particles are also preferably amorphous. The organic fine particles are preferably polymer fine particles synthesized by polymerization reaction of monomers (for example, emulsion polymerization method). The organic fine particle polymer preferably contains a fluorine atom. Examples of the monomer containing a fluorine atom used for synthesizing the fluorine-containing polymer include fluoroolefins (eg, fluoroethylene, vinylidene fluoride, tetrafluoroethylene, hexafluoropropylene, perfluoro-2,2-dimethyl-1 , 3-dioxole), fluorinated alkyl esters of acrylic acid or methacrylic acid and fluorinated vinyl ethers. A copolymer of a monomer containing a fluorine atom and a monomer not containing a fluorine atom may be used. Examples of monomers that do not contain fluorine atoms include olefins (eg, ethylene, propylene, isoprene, vinyl chloride, vinylidene chloride), acrylic esters (eg, methyl acrylate, ethyl acrylate, 2-ethylhexyl acrylate). , Methacrylates (eg, methyl methacrylate, ethyl methacrylate, butyl methacrylate), styrenes (eg, styrene, vinyl toluene, α-methyl styrene), vinyl ethers (eg, methyl vinyl ether), vinyl esters ( Examples include vinyl acetate, vinyl propionate), acrylamides (eg, N-tert-butylacrylamide, N-cyclohexylacrylamide), methacrylamides and acrylonitriles.

  The microvoids in the organic fine particles can be formed, for example, by crosslinking a polymer that forms the particles. Crosslinking the polymer reduces the volume and makes the particles porous. In order to crosslink the polymer forming the particles, it is preferable to use 20 mol% or more of the monomer for synthesizing the polymer as a polyfunctional monomer. The ratio of the polyfunctional monomer is more preferably 30 to 80 mol%, and most preferably 35 to 50 mol%. Examples of polyfunctional monomers include dienes (eg, butadiene, pentadiene), esters of polyhydric alcohols and acrylic acid (eg, ethylene glycol diacrylate, 1,4-cyclohexane diacrylate, dipentaerythritol hexaacrylate), Esters of polyhydric alcohol and methacrylic acid (eg, ethylene glycol dimethacrylate, 1,2,4-cyclohexanetetramethacrylate, pentaerythritol tetramethacrylate), divinyl compounds (eg, divinylcyclohexane, 1,4-divinylbenzene), divinyl Sulfones, bisacrylamides (eg, methylene bisacrylamide) and bismethacrylamides are included. Microvoids between particles can be formed by stacking at least two fine particles.

The low dielectric constant layer may be made of a material having fine pores and fine inorganic particles. In this case, the low dielectric constant layer is formed by coating, and the fine vacancies are formed by performing an activated gas treatment after applying the layer, and the gas is released from the layer. Alternatively, the low dielectric constant layer may be formed by mixing two or more kinds of ultrafine particles (for example, MgF ₂ and SiO ₂ ) and changing the mixing ratio in the film thickness direction. The dielectric constant is changed by changing the mixing ratio. The ultrafine particles are bonded by SiO ₂ generated by the thermal decomposition of ethyl silicate. In the thermal decomposition of ethyl silicate, carbon dioxide and water vapor are also generated by combustion of the ethyl portion. Since carbon dioxide and water vapor are separated from the layer, a gap is formed between the ultrafine particles. Alternatively, an inorganic fine powder made of porous silica and a binder may be included to form a low dielectric constant layer, or two or more fine particles made of a fluoropolymer may be stacked to form a void between the fine particles. A dielectric layer may be formed.

  Porosity can also be improved at the molecular structure level. For example, a low dielectric constant can be obtained by using a polymer having a branched structure such as a dendrimer.

  In order to form the source electrode 243 and the drain electrode 244, first, contact holes corresponding to the source electrode and the drain electrode are formed by patterning the first interlayer insulating layer 283 using a photolithography method. Next, after forming a conductive layer made of a metal such as aluminum, chromium, or tantalum so as to cover the first interlayer insulating layer 283, a region in which the source electrode and the drain electrode are to be formed is covered. The source electrode 243 and the drain electrode 244 are formed by providing a patterning mask and patterning the conductive layer.

  The barrier layer 285 prevents the metal ions from diffusing from the side included in the organic EL element constituting the light emitting layer 60 to the TFT 24 side, and covers the source electrode 243 and the drain electrode 244 so as to cover the first interlayer insulating layer. It is formed by the same means as 283. The material of the barrier layer 285 was selected from at least one element selected from B (boron), C (carbon), and N (nitrogen), and from Al (aluminum), Si (silicon), and P (phosphorus). An insulating layer containing at least one element can be given.

For example, aluminum nitride represented by aluminum nitride (AlxNy), silicon carbide represented by silicon carbide (SixCy), silicon nitride represented by silicon nitride (SixNy), and boron nitride (BxNy) Boron phosphide represented by boron nitride and boron phosphide (BxPy) can be used. In addition, an aluminum oxide typified by aluminum oxide (AlxOy) has a thermal conductivity of 20 Wm ⁻¹ K ⁻¹ , has an excellent heat dissipation effect, and can prevent thermal deterioration of the light emitting element. One can say. These materials not only have the above effects, but also have an effect of preventing moisture from entering.

  Other elements can be combined with the above compound. For example, it is possible to use aluminum nitride oxide represented by AlNxOy by adding nitrogen to aluminum oxide. This material has not only a heat dissipation effect but also an effect of preventing moisture and mobile ions from entering.

  An insulating film containing Si, Al, N, O, and M (where M is at least one rare earth element, preferably Ce (cerium), Yb (ytterbium), Sm (samarium), Er (erbium), Y ( Yttrium), La (lanthanum), Gd (gadolinium), Dy (dysprosium), and Nd (neodymium). These materials have not only a heat dissipation effect but also an effect of preventing intrusion of moisture and mobile ions.

  In addition, a carbon film including at least a diamond thin film or an amorphous carbon film (in particular, a material having characteristics close to diamond, called diamond-like carbon) can be used. These have very high thermal conductivity and are extremely effective as a heat dissipation layer. However, as the film thickness increases, the film becomes brownish and the transmittance decreases. Therefore, it is preferable to use the film as thin as possible (preferably 5 to 100 nm).

  Since the purpose of the protective layer is to protect the TFT from mobile ions and moisture, it is preferable not to impair the effect. Therefore, a thin film made of a material having the above heat dissipation effect can be used alone, but these thin films and an insulating film (typically a silicon nitride film (SixNy) or a nitridation oxide) that can prevent the transmission of mobile ions and moisture. It is effective to stack a silicon film (SiOxNy).

  Like the first interlayer insulating layer 283, the second interlayer insulating layer 284 is made of a porous body, airgel, porous silica, magnesium fluoride, a fluorine-based polymer, a porous polymer, or the like, and the first interlayer insulating layer 283 is formed. It is formed on the upper layer of the barrier layer 285 by the same procedure as the method.

  Note that after the formation of the barrier layer 285 and after the formation of the second interlayer insulating layer 284, contact holes 23a are formed in portions corresponding to the drain electrodes 244, respectively.

  The dielectric constants of the first interlayer insulating layer 283 and the second interlayer insulating layer 284 are preferably set to 3 or less, more preferably 2.5 or less.

The anode 23 connected to the organic EL element 3 is made of a transparent electrode material such as SnO ₂ doped with ITO or fluorine, ZnO or polyamine, and is connected to the drain electrode 244 of the TFT 24 through a contact hole 23a. . The anode 23 is formed by forming a film made of the transparent electrode material on the upper surface of the second interlayer insulating layer 284 and patterning this film.

  The third insulating layer 221 is made of a synthetic resin such as an acrylic resin or a polyimide resin. The third insulating layer 221 is formed after the anode 23 is formed. As a specific method for forming the third insulating layer 221, for example, an insulating layer is formed by applying a resist such as acrylic resin or polyimide resin melted in a solvent by spin coating, dip coating, or the like. The constituent material of the insulating layer may be any material as long as it does not dissolve in the ink solvent described below and can be easily patterned by etching or the like. Further, the insulating layer is simultaneously etched by a photolithography technique or the like to form the opening 221a, whereby the third insulating layer 221 having the opening 221a is formed.

  Here, on the surface of the third insulating layer 221, a region showing lyophilicity (for example, ink repellency) and a region showing liquid repellency (for example, ink repellency) are formed. In the present embodiment, each region is formed by a plasma treatment process. Specifically, the plasma treatment process includes a preliminary heating process, an ink repellency process for making the wall surface of the opening 221a and the electrode surface of the pixel electrode 23 ink-philic, and an upper surface of the third insulating layer 221 having ink repellency. It has an ink repellent process and a cooling process.

That is, the substrate (here, the substrate 2 including the third insulating layer and the like) is heated to a predetermined temperature (for example, about 70 to 80 soil), and then plasma treatment using oxygen as a reactive gas in an atmospheric atmosphere as an ink-philic step (For example, O ₂ plasma processing) is performed. Subsequently, as an ink repellent process, plasma treatment (for example, CF ₄ plasma treatment) using methane tetrafluoride as a reaction gas is performed in an air atmosphere, and the substrate heated for plasma treatment is cooled to room temperature. Thus, ink affinity and ink repellency are imparted to predetermined locations. The electrode surface of the pixel electrode 23 is also somewhat affected by this CF ₄ plasma treatment. However, since ITO or the like, which is the material of the pixel electrode 23, has a poor affinity for fluorine, the hydroxyl group imparted in the ink-philic step is used. Is not substituted with a fluorine group, and ink affinity is maintained.

  The hole transport layer 70 is formed on the upper surface of the anode 23. Here, the material for forming the hole transport layer 70 is not particularly limited, and known materials can be used, and examples thereof include pyrazoline derivatives, arylamine derivatives, stilbene derivatives, and triphenyldiamine derivatives. Specifically, JP-A-63-70257, JP-A-63-175860, JP-A-2-135359, JP-A-2-135361, JP-A-2-209998, JP-A-3-37992, and JP-A-3-152184. Examples described in the publication are exemplified, but a triphenyldiamine derivative is preferable, and 4,4′-bis (N (3-methylphenyl) -N-phenylamino) biphenyl is particularly preferable.

  Note that a hole injection layer may be formed instead of the hole transport layer, and both the hole injection layer and the hole transport layer may be formed. In this case, as a material for forming the hole injection layer, for example, copper phthalocyanine (CuPc), polytetravinylthiophene polyphenylene vinylene, 1,1-bis- (4-N, N-ditolylaminophenyl) cyclohexane , Tris (8-hydroxyquinolinol) aluminum and the like, and copper phthalocyanine (CuPc) is particularly preferable.

  When the hole injection / transport layer 70 is formed, an ink jet method is used. That is, after discharging the composition ink containing the hole injection / transport layer material described above onto the electrode surface of the anode 23, the hole injection / transport layer 70 is formed on the electrode 23 by performing a drying process and a heat treatment. Is done. In addition, it is preferable to carry out after this hole injection / transport layer formation process in inert gas atmospheres, such as nitrogen atmosphere and argon atmosphere, in order to prevent the oxidation of the hole injection / transport layer 70 and the light emitting layer 60. FIG. For example, an ink jet head (not shown) is filled with a composition ink containing a hole injection / transport layer material, and the discharge nozzle of the ink jet head is made to face the electrode surface of the anode 23, so that the ink jet head and the substrate (here, the substrate 2). ) Are relatively moved, and ink droplets whose liquid amount per droplet is controlled are discharged from the discharge nozzle onto the electrode surface. Next, the hole injection / transport layer 70 is formed by drying the ejected ink droplets to evaporate the polar solvent contained in the composition ink.

  In addition, as a composition ink, what melt | dissolved the mixture of polythiophene derivatives, such as polyethylene dioxythiophene, polystyrene sulfonic acid, etc. in polar solvents, such as isopropyl alcohol, can be used, for example. Here, the ejected ink droplet spreads on the electrode surface of the anode 23 that has been subjected to the affinity ink treatment, and fills the vicinity of the bottom of the opening 221a. On the other hand, ink droplets are repelled and do not adhere to the upper surface of the third insulating layer 221 that has been subjected to the ink repellent treatment. Therefore, even if the ink droplet is deviated from the predetermined ejection position and ejected onto the upper surface of the third insulating layer 221, the upper surface does not get wet with the ink droplet, and the repelled ink droplet is opened to the third insulating layer 221. It is supposed to roll into the portion 221a.

  The light emitting layer 60 is formed on the upper surface of the hole injection / transport layer 70. The material for forming the light emitting layer 60 is not particularly limited, and low molecular organic light emitting dyes and polymer light emitting materials, that is, light emitting materials composed of various fluorescent materials and phosphorescent materials can be used. Among conjugated polymers that serve as luminescent materials, those containing an arylene vinylene structure are particularly preferred. Examples of the low-molecular phosphors include naphthalene derivatives, anthracene derivatives, perylene derivatives, polymethine series, xanthene series, coumarin series, cyanine series pigments, 8-hydroquinoline and its metal complexes, aromatic amines, tetraphenylcyclo Pentadiene derivatives and the like, or known ones described in JP-A-57-51781 and 59-194393 can be used.

  In the case of using a polymeric fluorescent substance as a material for forming the light emitting layer 60, a polymer having a fluorescent group in the side chain can be used, but preferably includes a conjugated structure in the main chain, and in particular, polythiophene, Poly-p-phenylene, polyarylene vinylene, polyfluorene and derivatives thereof are preferred. Of these, polyarylene vinylene and its derivatives are preferred. The polyarylene vinylene and its derivatives are polymers containing 50 mol% or more of the repeating units represented by the following chemical formula (1) based on the total repeating units. Although it depends on the structure of the repeating unit, the repeating unit represented by the chemical formula (1) is more preferably 70% or more of the entire repeating unit.

-Ar-CR = CR'- (1)
[Wherein Ar is an arylene group or heterocyclic compound group having 4 to 20 carbon atoms involved in the conjugated bond, R and R ′ are each independently hydrogen, an alkyl group having 1 to 20 carbon atoms. , A group selected from the group consisting of an aryl group having 6 to 20 carbon atoms, a heterocyclic compound having 4 to 20 carbon atoms, and a cyano group. ]
The polymeric fluorescent substance includes an aromatic compound group or a derivative thereof, a heterocyclic compound group or a derivative thereof, and a group obtained by combining them as a repeating unit other than the repeating unit represented by the chemical formula (1). May be. In addition, the repeating unit represented by the chemical formula (1) and other repeating units may be linked by a non-conjugated unit having an ether group, an ester group, an amide group, an imide group, or the like, Non-conjugated moieties may be included.

  In the polymer fluorescent substance, Ar in the chemical formula (1) is an arylene group or a heterocyclic compound group having 4 to 20 carbon atoms involved in the conjugated bond, and is represented by the following chemical formula (2). Examples include an aromatic compound group or a derivative group thereof, a heterocyclic compound group or a derivative group thereof, and a group obtained by combining them.

(R1 to R92 are each independently hydrogen, an alkyl group having 1 to 20 carbon atoms, an alkoxy group and an alkylthio group; an aryl group and aryloxy group having 6 to 18 carbon atoms; and a heterocyclic compound having 4 to 14 carbon atoms. A group selected from the group consisting of groups.)
Among these, phenylene group, substituted phenylene group, biphenylene group, substituted biphenylene group, naphthalenediyl group, substituted naphthalenediyl group, anthracene-9,10-diyl group, substituted anthracene-9,10-diyl group, pyridine-2, 5-diyl group, substituted pyridine-2,5-diyl group, thienylene group and substituted thienylene group are preferred. More preferred are a phenylene group, a biphenylene group, a naphthalenediyl group, a pyridine-2,5-diyl group, and a thienylene group.

  When R and R ′ in the chemical formula (1) are hydrogen or a substituent other than a cyano group, the alkyl group having 1 to 20 carbon atoms includes a methyl group, an ethyl group, a propyl group, a butyl group, and a pentyl group. Hexyl group, heptyl group, octyl group, decyl group, lauryl group and the like, and methyl group, ethyl group, pentyl group, hexyl group, heptyl group and octyl group are preferable. Examples of the aryl group include a phenyl group, a 4-C1-C12 alkoxyphenyl group (C1-C12 indicates that the number of carbon atoms is 1-12, and the same shall apply hereinafter), a 4-C1-C12 alkylphenyl group, 1 -A naphthyl group, 2-naphthyl group, etc. are illustrated.

  From the viewpoint of solvent solubility, Ar in the chemical formula (1) is one or more alkyl groups having 4 to 20 carbon atoms, alkoxy groups and alkylthio groups, aryl groups and aryloxy groups having 6 to 18 carbon atoms, and 4 to 4 carbon atoms. It preferably has a group selected from 14 heterocyclic compound groups.

  Examples of these substituents are as follows. Examples of the alkyl group having 4 to 20 carbon atoms include a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, and a lauryl group, and a pentyl group, a hexyl group, a heptyl group, and an octyl group are preferable. Examples of the alkoxy group having 4 to 20 carbon atoms include a butoxy group, a pentyloxy group, a hexyloxy group, a heptyloxy group, an octyloxy group, a decyloxy group, a lauryloxy group, and the like, such as a pentyloxy group and a hexyloxy group. , A heptyloxy group and an octyloxy group are preferable. Examples of the alkylthio group having 4 to 20 carbon atoms include a butylthio group, a pentylthio group, a hexylthio group, a heptylthio group, an octylthio group, a decyloxy group, and a laurylthio group, and a pentylthio group, a hexylthio group, a heptylthio group, and an octylthio group are preferable. Examples of the aryl group include a phenyl group, a 4-C1-C12 alkoxyphenyl group, a 4-C1-C12 alkylphenyl group, a 1-naphthyl group, and a 2-naphthyl group. A phenoxy group is illustrated as an aryloxy group. Examples of the heterocyclic compound group include a 2-thienyl group, 2-pyrrolyl group, 2-furyl group, 2-, 3- or 4-pyridyl group. The number of these substituents varies depending on the molecular weight of the polymeric fluorescent substance and the constitution of the repeating unit, but from the viewpoint of obtaining a highly soluble polymeric fluorescent substance, these substituents are one or more per 600 molecular weight. It is more preferable.

  The polymeric fluorescent substance may be a random, block or graft copolymer, or may be a polymer having an intermediate structure thereof, for example, a random copolymer having a block property. . From the viewpoint of obtaining a polymer fluorescent substance having a high fluorescence quantum yield, a random copolymer having a block property and a block or graft copolymer are preferable to a complete random copolymer. In addition, since the organic EL element formed here utilizes fluorescence from a thin film, the polymer fluorescent substance having fluorescence in a solid state is used.

  When a solvent is used for the polymeric fluorescent substance, preferred examples include chloroform, methylene chloride, dichloroethane, tetrahydrofuran, toluene, xylene and the like. Although depending on the structure and molecular weight of the polymeric fluorescent substance, it can usually be dissolved in these solvents in an amount of 0.1 wt% or more.

Moreover, as said polymeric fluorescent substance, it is preferable that molecular weight is 10 < ³ > -10 < ⁷ > in polystyrene conversion, Their polymerization degree changes also with a repeating structure and its ratio. In general, the total number of repeating structures is preferably 4 to 10,000, more preferably 5 to 3,000, and particularly preferably 10 to 2,000 in terms of film formability.

  The method for synthesizing such a polymeric fluorescent substance is not particularly limited. For example, a dialdehyde compound in which two aldehyde groups are bonded to an arylene group, a compound in which two halogenated methyl groups are bonded to an arylene group, and triphenyl A Wittig reaction from a diphosphonium salt obtained from phosphine is exemplified. As another synthesis method, a dehydrohalogenation method from a compound in which two halogenated methyl groups are bonded to an arylene group is exemplified. Furthermore, a sulfonium salt decomposition method for obtaining the polymeric fluorescent substance by heat treatment from an intermediate obtained by polymerizing a sulfonium salt of a compound having two halogenated methyl groups bonded to an arylene group with an alkali is exemplified. In any of the synthesis methods, a compound having a skeleton other than an arylene group is added as a monomer, and by changing the abundance ratio, the structure of the repeating unit contained in the generated polymeric fluorescent substance can be changed. The repeating unit represented by (1) may be added and adjusted so as to be 50 mol% or more and copolymerized. Among these, the method by Wittig reaction is preferable in terms of reaction control and yield.

  More specifically, a method for synthesizing an arylene vinylene copolymer, which is one example of the polymeric fluorescent substance, will be described. For example, when obtaining a polymeric fluorescent substance by Wittig reaction, for example, first, a bis (halogenated methyl) compound, more specifically, for example, 2,5-dioctyloxy-p-xylylene dibromide is converted to N, N- A phosphonium salt is synthesized by reacting with triphenylphosphine in a dimethylformamide solvent, and this is condensed with a dialdehyde compound, more specifically, for example, terephthalaldehyde using, for example, lithium ethoxide in ethyl alcohol. By the Wittig reaction, a polymeric fluorescent substance containing a phenylene vinylene group and a 2,5-dioctyloxy-p-phenylene vinylene group is obtained. At this time, in order to obtain a copolymer, two or more kinds of diphosphonium salts and / or two or more kinds of dialdehyde compounds may be reacted.

  When these polymeric fluorescent substances are used as a material for forming a light emitting layer, the purity affects the light emission characteristics. Therefore, it is desirable to carry out a purification treatment such as reprecipitation purification and fractionation by chromatography after synthesis.

  Further, as the material for forming the light emitting layer made of the above-described polymeric fluorescent material, light emitting layer forming materials of three colors of red, green, and blue are used for full color display, each of which is a predetermined patterning device (inkjet device). ) To the pixel AR at a preset position and patterned.

  Note that as the light-emitting substance, a host material added with a guest material can be used.

  As such a light emitting material, for example, a high molecular organic compound or a low molecular weight material as a host material, or a fluorescent dye or a phosphorescent material for changing the light emitting characteristics of a light emitting layer obtained as a guest material is used. Preferably used.

  As a high molecular organic compound, in the case of a material with low solubility, for example, after a precursor is applied, light emission that becomes a conjugated high molecular organic EL layer by being heated and cured as shown in the following chemical formula (3) Some can produce layers. For example, in the case of a sulfonium salt as a precursor, there are those in which a sulfonium group is eliminated by heat treatment to become a conjugated polymer organic compound.

  In addition, some highly soluble materials can be used as a light emitting layer by applying the material as it is and then removing the solvent.

  The polymer organic compound is solid and has strong fluorescence, and can form a uniform solid ultrathin film. In addition, it has high forming ability and high adhesion to the ITO electrode, and after solidification, forms a strong conjugated polymer film.

  As such a high molecular organic compound, for example, polyarylene vinylene is preferable. Polyarylene vinylene is soluble in an aqueous solvent or an organic solvent and can be easily prepared into a coating solution when applied to the second substrate 11, and can be polymerized under certain conditions. A high-quality thin film can be obtained.

  Examples of such polyarylene vinylene include PPV (poly (para-phenylene vinylene)), MO-PPV (poly (2,5-dimethoxy-1,4-phenylene vinylene)), CN-PPV (poly (2,5 -Bishexyloxy-1,4-phenylene- (1-cyanovinylene))), MEH-PPV (poly [2-methoxy-5- (2′-ethylhexyloxy)]-para-phenylenevinylene), etc. , Poly (alkylthiophene) such as PTV (poly (2,5-thienylenevinylene)), PFV (poly (2,5-furylenevinylene)), poly (paraphenylene), polyalkylfluorene, and the like. Among them, those composed of precursors of PPV or PPV derivatives as shown in the chemical formula (4), and polymers as shown in the chemical formula (5) Le Kill fluorene (specifically, the formula (6) shown above polyalkylfluorene copolymer) is particularly preferred.

  Since PPV or the like is a conductive polymer having strong fluorescence and π electrons forming a double bond being non-polarized on the polymer chain, a high-performance organic EL device can be obtained.

In addition to the PPV thin film, a high molecular organic compound or a low molecular material capable of forming a light emitting layer, that is, a material used as a host material in this example is, for example, an aluminum quinolinol complex (Alq3), distyryl biphenyl, a chemical formula ( 7) BeBq ₂ and Zn (OXZ) ₂ shown in FIG. 7), and those generally used conventionally such as TPD, ALO, and DPVBi, pyrazoline dimer, quinolidinecarboxylic acid, benzopyrylium perchlorate, benzo Examples include pyranoquinolidine, rubrene, phenanthroline europium complex, and the like, and a composition for an organic EL device containing one or more of these can be used.

  On the other hand, examples of the guest material added to such a host material include fluorescent dyes and phosphorescent substances as described above. In particular, the fluorescent dye can change the light emission characteristics of the light emitting layer, and is effective, for example, as a means for improving the light emission efficiency of the light emitting layer or changing the light absorption maximum wavelength (light emission color). That is, the fluorescent dye can be used not only as a light emitting layer material but also as a dye material having a light emitting function itself. For example, the energy of exciton generated by carrier recombination on a conjugated polymer organic compound molecule can be transferred onto the fluorescent dye molecule. In this case, since light emission occurs only from fluorescent dye molecules having high fluorescence quantum efficiency, the current quantum efficiency of the light emitting layer is also increased. Therefore, by adding a fluorescent dye to the material for forming the light emitting layer, the emission spectrum of the light emitting layer simultaneously becomes that of the fluorescent molecule, which is effective as a means for changing the emission color.

  The current quantum efficiency here is a scale for considering the light emission performance based on the light emission function, and is defined by the following equation.

ηE = energy of emitted photons / input electric energy And, by converting the light absorption maximum wavelength by doping with a fluorescent dye, it is possible to emit, for example, three primary colors of red, blue and green, resulting in a full color display It becomes possible.

  Furthermore, the luminous efficiency of the organic EL element can be significantly improved by doping with a fluorescent dye.

  As the fluorescent dye, in the case of forming a light emitting layer that emits red colored light, it is preferable to use the laser dye DCM-1, rhodamine or rhodamine derivative, penylene, or the like. A light emitting layer can be formed by doping a host material such as PPV with these fluorescent dyes. However, since many of these fluorescent dyes are water-soluble, they are added to a sulfonium salt that is a water-soluble PPV precursor. Doping and then heat treatment makes it possible to form a more uniform light emitting layer. Specific examples of such fluorescent dyes include rhodamine B, rhodamine B base, rhodamine 6G, rhodamine 101 perchlorate and the like, and a mixture of two or more thereof may be used.

  Moreover, when forming the light emitting layer which emits green colored light, it is preferable to use quinacridone, rubrene, DCJT and derivatives thereof. For these fluorescent dyes, a light emitting layer can be formed by doping a host material such as PPV as in the case of the above fluorescent dyes. However, since these fluorescent dyes are often water-soluble, they are water-soluble. If a sulfonium salt, which is a PPV precursor, is doped and then heat-treated, a more uniform light emitting layer can be formed.

  Furthermore, when forming a light emitting layer that emits blue colored light, it is preferable to use distyrylbiphenyl and its derivatives. For these fluorescent dyes, a light emitting layer can be formed by doping a host material such as PPV as in the case of the above fluorescent dyes. However, since these fluorescent dyes are often water-soluble, they are water-soluble. If a sulfonium salt, which is a PPV precursor, is doped and then heat-treated, a more uniform light emitting layer can be formed.

  In addition, examples of other fluorescent dyes having blue colored light include coumarin and derivatives thereof. These fluorescent dyes are compatible with PPV and can easily form a light emitting layer. Among these, particularly, coumarin is insoluble in a solvent itself, but there are some which become soluble in a solvent by increasing the solubility by appropriately selecting a substituent. Specific examples of such fluorescent dyes include coumarin-1, coumarin-6, coumarin-7, coumarin 120, coumarin 138, coumarin 152, coumarin 153, coumarin 311, coumarin 314, coumarin 334, coumarin 337, coumarin 343 and the like. Is mentioned.

  Furthermore, examples of the fluorescent dye having another blue colored light include tetraphenylbutadiene (TPB) or a TPB derivative, DPVBi, and the like. These fluorescent dyes are soluble in an aqueous solution in the same manner as the red fluorescent dye and the like, have good compatibility with PPV, and can easily form a light emitting layer.

  About the above fluorescent dye, only 1 type may be used for each color, and 2 or more types may be mixed and used for it.

  In addition, as such a fluorescent dye, those shown in chemical formula (8), those shown in chemical formula (9), and those shown in chemical formula (10) are used.

  About these fluorescent dyes, it is preferable to add 0.5-10 wt% by the method mentioned later with respect to the host material consisting of the said conjugated polymer organic compound etc., and adding 1.0-5.0 wt%. More preferred. If the amount of fluorescent dye added is too large, it will be difficult to maintain the weather resistance and durability of the light-emitting layer obtained. On the other hand, if the amount added is too small, the effects of adding the fluorescent dye as described above will be sufficiently obtained. Because there is no.

In addition, Ir (ppy) ₃ , Pt (thpy) ₂ , PtOEP, or the like represented by the chemical formula (11) is preferably used as a phosphorescent material as a guest material added to the host material.

  Note that when the phosphor represented by the chemical formula (11) is used as a guest material, CBP, DCTA, TCPB, or the above-described DPVBi, Alq3 shown in the chemical formula (12) is particularly preferably used as the host material.

  Further, both the fluorescent dye and the phosphor may be added to the host material as a guest material.

  When the light emitting layer 60 is formed of such a host / guest luminescent material, for example, a plurality of material supply systems such as nozzles are formed in advance in a patterning device (inkjet device), and the host material and guest are formed from these nozzles. By simultaneously discharging the materials at a preset amount ratio, the light emitting layer 60 can be formed of a light emitting material in which a desired amount of guest material is added to the host material.

  The light emitting layer 60 is formed by the same procedure as the method for forming the hole injection / transport layer 70. That is, after the composition ink containing the light emitting layer material is ejected onto the upper surface of the hole injection / transport layer 70 by an ink jet method, the inside of the opening 221a formed in the third insulating layer 221 is performed by performing a drying process and a heat treatment. The light emitting layer 60 is formed on the hole injection / transport layer 70. This light emitting layer forming step is also performed in an inert gas atmosphere as described above. Since the ejected composition ink is repelled in the ink-repellent treated region, the repelled ink droplet rolls into the opening 221a of the third insulating layer 221 even if the ink droplet deviates from a predetermined ejection position.

  The electron transport layer 50 is formed on the upper surface of the light emitting layer 60. The electron transport layer 50 is also formed by the ink jet method in the same manner as the method for forming the light emitting layer 60. The material for forming the electron transport layer 50 is not particularly limited, and is an oxadiazole derivative, anthraquinodimethane and its derivative, benzoquinone and its derivative, naphthoquinone and its derivative, anthraquinone and its derivative, tetracyanoanthraquinodi. Examples include methane and its derivatives, fluorenone derivatives, diphenyldicyanoethylene and its derivatives, diphenoquinone derivatives, metal complexes of 8-hydroxyquinoline and its derivatives, and the like. Specifically, as with the material for forming the hole transport layer, JP-A-63-70257, JP-A-63-175860, JP-A-2-135359, JP-A-2-135361, and JP-A-2-209888 are disclosed. And the like described in JP-A-3-379992 and 3-152184, particularly 2- (4-biphenylyl) -5- (4-t-butylphenyl) -1,3,4. -Oxadiazole, benzoquinone, anthraquinone, tris (8-quinolinol) aluminum are preferred.

  In addition, the hole injection / transport layer 70 forming material and the electron transport layer 50 forming material described above may be mixed with the light emitting layer 60 forming material and used as the light emitting layer forming material. Although the amount of the injection / transport layer forming material and the electron transport layer forming material used varies depending on the type of compound used, etc., it is appropriately determined in consideration of the amount within a range that does not impair sufficient film formability and light emission characteristics. Is done. Usually, it is 1 to 40 weight% with respect to the light emitting layer forming material, More preferably, it is 2 to 30 weight%.

  Note that the hole injection / transport layer 70, the electron transport layer 50, and the like can be formed not only by the inkjet method but also by using a mask vapor deposition method.

  The cathode 222 is formed in the whole surface of the electron carrying layer 50 and the 3rd insulating layer 221, or stripe form. Of course, the cathode 222 may be formed of a single layer made of a single material such as Al, Mg, Li, or Ca, or an alloy material of Mg: Ag (10: 1 alloy). It may be formed as a layer (including an alloy). Specifically, a layered structure such as Li 2 O (about 0.5 nm) / Al, LiF (about 0.5 nm) / Al, or MgF 2 / Al can be used. The cathode 222 is a thin film made of the above-described metal and can transmit light.

  The sealing layer 20 blocks air from entering the organic EL element from the outside, and is formed so as to cover the surfaces of the barrier layer 285 and the cathode 222. As a material constituting the sealing layer 20, ceramic, silicon nitride, silicon oxynitride, silicon oxide, or the like is used, and the sealing layer 20 is formed by the same means as the first interlayer insulating layer 283. It is also effective to form the sealing layer 20 using the same material as the barrier layer 285.

  As described above, the insulation made of the low dielectric constant material between the electrodes of the TFTs 22 and 24 and between the wirings connected to these electrodes (for example, the scanning line 131, the signal line 132, the light-emitting power supply wiring 133, etc.) Since the film is provided, the parasitic capacitance generated between the electrodes or between the wirings can be reduced. Thereby, the isolation of the drive signal supplied to the TFTs 22 and 24 is ensured, and the light emitting layer 60 can be driven with high accuracy. Further, since the parasitic capacitance is reduced, the TFTs 22 and 24 can be operated by a drive signal having a higher frequency.

  In particular, an electrode or wiring fixed at a predetermined potential such as a common electrode (cathode 222 in the above example) facing the pixel electrode, and a signal wiring for supplying a changing electric signal such as a signal line or a scanning line By disposing a low dielectric constant layer between the two, the contribution of capacitance to the signal wiring is reduced, and problems such as signal bluntness or delay of electrical signals can be overcome.

  Therefore, the electro-optical device 1 can realize a stable display operation and a large display area (large screen).

  In addition, since the barrier layer 285 is formed so as to cover the TFTs 22 and 24, the active element can be prevented from deteriorating due to the intrusion of metal components, gas in the atmosphere, moisture, and the like. A stable display operation can be realized.

  In particular, since the low dielectric constant layer is generally porous, elements such as metal components, atmospheric gases, and moisture are likely to enter the element deterioration factor. For example, in the above example, by disposing a barrier layer and a low dielectric constant layer between the cathode 222) and the active element, the effect of reducing the dullness or delay of the electric signal, and the length of the electro-optical device can be obtained. The effect of period stability can be achieved.

  In addition, since the sealing layer 20 is formed so as to cover the upper side of the cathode 222, intrusion of a metal component, gas in the atmosphere, moisture, and the like from the outside into the light emitting layer 60 is prevented, and the cathode 222 and the light emitting layer 60 are deteriorated. The electro-optical device 1 can realize a stable display operation over a long period of time.

  In the above embodiment, each of the first interlayer insulating layer 283 and the second interlayer insulating layer 284 is formed of a low dielectric material such as a porous body. However, all these layers are formed of a low dielectric material. There is no need, and at least one of the layers may be formed of a low dielectric material.

  In this embodiment, the barrier layer 285 is formed above the first interlayer insulating layer 283, but the same effect can be obtained even if it is formed above the second interlayer insulating layer 284.

  Furthermore, the electro-optical device 1 can be configured by appropriately combining the arrangement of the barrier layer 285 and the types of materials for forming the first interlayer insulating layer 283 and the second interlayer insulating layer 284.

  In addition to the hole injection / transport layer 70, the light emitting layer 60, and the electron transport layer 50, a hole blocking layer is formed, for example, on the counter electrode 222 side of the light emitting layer 60, thereby extending the life of the light emitting layer 60. You may plan. As a material for forming such a hole blocking layer, for example, BCP represented by the chemical formula (13) and BAlq represented by the chemical formula (14) are used, but BAlq is preferable in terms of extending the life.

  Next, an example of an electronic apparatus including the electro-optical device according to the above embodiment will be described.

  FIG. 4 is a perspective view showing an example of a mobile phone. In this figure, reference numeral 1000 denotes a mobile phone body, and reference numeral 1001 denotes a display unit using the electro-optical device.

  FIG. 5 is a perspective view showing an example of a wristwatch type electronic apparatus. In this figure, reference numeral 1100 indicates a watch body, and reference numeral 1101 indicates a display unit using the electro-optical device.

  FIG. 6 is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer. In this figure, reference numeral 1200 denotes an information processing apparatus, reference numeral 1202 denotes an input unit such as a keyboard, reference numeral 1204 denotes an information processing apparatus body, and reference numeral 1206 denotes a display unit using the above electro-optical device.

  Since the electronic apparatus shown in FIGS. 4 to 6 includes the electro-optical device according to the above-described embodiment, it is possible to realize an electronic apparatus capable of stable display operation with reduced parasitic capacitance between wirings and electrodes.

  The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in the above-described embodiment, an example in which a light emitting layer and a hole transport layer are sandwiched between a pair of electrodes is given as a configuration of the organic EL element. An organic layer having various functions such as an injection layer and an electron injection layer may be inserted. In addition, the specific materials described in the embodiment are merely examples, and can be changed as appropriate.

  In the configuration of the display device 1 according to the present embodiment, the light emitting layer 60 can be replaced with other optical display materials such as a liquid crystal layer.

In the present embodiment, a so-called back emission type in which the display device 1 extracts light from the substrate 2 side on which the TFTs 22 and 24 are disposed has been described. However, the present invention is not limited to this, and the substrate 2 on which the TFTs 22 and 24 are disposed. It may be a so-called top emission type display device that extracts light from the opposite side.
〔The invention's effect〕

  According to the present invention, the insulating film that insulates between the electrodes of the active elements or between the wirings connected to the electrodes includes the insulating film made of an insulating material having a dielectric constant of a predetermined value or less. The parasitic capacitance generated between the wirings or between the wirings can be reduced. Thereby, the isolation between the drive signals supplied to each active element is ensured, and the electro-optic element can be driven with high accuracy by each active element. Further, since the parasitic capacitance is reduced, each active element can be operated by a drive signal having a higher frequency. Therefore, it is possible to realize an electro-optical device capable of stable display operation and having a large display area.

  Further, if the protective layer (first protective layer) is formed so as to cover the active element, the active element can be prevented from deteriorating due to intrusion of a metal component, gas in the atmosphere, moisture, etc. A circuit board and an electro-optical device capable of stable operation can be realized.

  Further, if the second protective layer is formed so as to cover the cathode, the entry of an external metal component, gas in the atmosphere, moisture and the like into the electro-optical element is prevented, and the electro-optical element is prevented from deteriorating. Thus, an electro-optical device capable of stable display operation over a long period of time can be realized.

FIG. 2 is a diagram illustrating an electro-optical device according to an embodiment of the invention, and is a schematic configuration diagram illustrating an example applied to an organic EL display device. FIG. 2 is an enlarged view showing a planar structure of a pixel portion in the display device of FIG. 1. FIG. 3 is a diagram illustrating an electro-optical device according to an embodiment of the invention, and is a cross-sectional view taken along line AA in FIG. 2. FIG. 6 is a diagram illustrating an example of an electronic apparatus including the electro-optical device according to the invention. FIG. 6 is a diagram illustrating an example of an electronic apparatus including the electro-optical device according to the invention. FIG. 6 is a diagram illustrating an example of an electronic apparatus including the electro-optical device according to the invention.

Explanation of symbols

1 Electro-optical device 2 Substrate 3 Organic electroluminescence element (electro-optical element)
20 Sealing layer (second protective layer)
22 Switching TFT (active element)
23 Pixel electrode (anode)
24 Current TFT (active device)
131 Scanning line (wiring)
132 Signal line (wiring)
133 Light-emitting power supply wiring (wiring)
222 Cathode 283 First interlayer insulating layer (insulating film)
284 Second interlayer insulating layer (insulating film)
285 Barrier layer (protective layer, first protective layer)

Claims (30)

An insulating substrate;
An active element disposed above the substrate;
Wiring for supplying an electric signal for driving the active element or driving power for driving the active element;
A first insulating film;
A second insulating film formed above the first insulating film;
An electrode formed above the second insulating film,
The active element and the electrode are connected via a contact hole provided over at least the first insulating film and the second insulating film,
The dielectric constant of the first insulating film is lower than the dielectric constant of the substrate;
A circuit board characterized by. An insulating substrate;
An active element disposed above the substrate;
Wiring for supplying an electric signal for driving the active element or driving power for driving the active element;
A first insulating film;
A second insulating film formed above the first insulating film;
An electrode formed above the second insulating film,
The active element is a transistor;
The semiconductor film included in the transistor is connected to the electrode through a contact hole provided over at least the first insulating film and the second insulating film,
The dielectric constant of the first insulating film is lower than the dielectric constant of the substrate;
A circuit board characterized by. The circuit board according to claim 1 or 2,
A third insulating film disposed between the substrate and the first insulating film;
A circuit board characterized by. The circuit board according to any one of claims 1 to 3,
The dielectric constant of the first insulating film is 3 or less;
A circuit board characterized by. The circuit board according to claim 1,
The dielectric constant of the first insulating film is 2.5 or less;
A circuit board characterized by. The circuit board according to any one of claims 1 to 5,
A fourth insulating film provided between the second insulating film and the electrode;
A circuit board characterized by. The circuit board according to any one of claims 1 to 6,
The insulating material included in the first insulating film is at least one of a porous body, an airgel, porous silica, magnesium fluoride, a fluorine-based polymer, and a porous polymer;
A circuit board characterized by. The circuit board according to any one of claims 1 to 7,
The insulating material contained in the first insulating film is silica glass, alkyl siloxane polymer, alkyl silsesquioxane polymer, hydrogenated alkyl silsesquioxane polymer, spin-on glass film containing any of polyaryl ethers, diamond At least one of a film and a fluorinated amorphous carbon film,
A circuit board characterized by. The circuit board according to any one of claims 1 to 8,
The first insulating film contains at least one of inorganic fine particles and organic fine particles in a predetermined material;
A circuit board characterized by. The circuit board according to claim 9,
The first insulating film includes a gel in which fine particles of magnesium fluoride are dispersed;
A circuit board characterized by. The circuit board according to any one of claims 1 to 10,
The second insulating film covers the active element;
A circuit board characterized by. The circuit board according to any one of claims 1 to 11,
The second insulating film contains at least one of a desiccant and a chemical adsorbent;
A circuit board characterized by. The circuit board according to any one of claims 1 to 12,
The second insulating film includes at least one of ceramic, silicon nitride, silicon oxynitride, and silicon oxide;
A circuit board characterized by. The circuit board according to any one of claims 1 to 13,
The second insulating film includes boron, carbon, nitrogen, aluminum, phosphorus, silicon, cerium, ytterbium, samarium, erbium, yttrium, lanthanum, gadolinium, dysprosium, neodymium, oxygen, barium oxide, calcium oxide, activated carbon, and zeolite. Including at least one of
A circuit board characterized by. The circuit board according to claim 6,
The dielectric constant of the fourth insulating film is 4 or less;
A circuit board characterized by. The circuit board according to claim 6,
The dielectric constant of the fourth insulating film is 3.5 or less;
A circuit board characterized by. A circuit board according to any one of claims 1 to 16,
An electro-optic element;
An electro-optical device. A substrate,
An electro-optic element provided between a first electrode and a second electrode formed above the substrate;
A first insulating film provided between the first electrode and the substrate;
A second insulating film formed between the first insulating film and the first electrode;
A third insulating film disposed between the first insulating film and the substrate;
The dielectric constant of the first insulating film is 4 or less;
An electro-optical device. A substrate,
An electro-optic element provided between a first electrode and a second electrode formed above the substrate;
A first insulating film provided between the first electrode and the substrate;
A second insulating film formed between the first insulating film and the first electrode;
A third insulating film disposed between the first insulating film and the substrate;
The dielectric constant of the first insulating film is 3 or less;
An electro-optical device. The electro-optical device according to claim 18 or 19,
The electro-optical device further includes an active element that drives the electro-optical element. The electro-optical device according to claim 20,
The second insulating film protects the active element from mobile ions or moisture;
An electro-optical device. The electro-optical device according to any one of claims 18 to 21,
The second insulating film contains at least one of a desiccant and a chemical adsorbent;
An electro-optical device. The electro-optical device according to any one of claims 18 to 22,
The second insulating film is made of at least one of ceramic, silicon nitride, silicon oxynitride, and silicon oxide;
An electro-optical device. 24. The electro-optical device according to claim 18,
The second insulating film includes boron, carbon, nitrogen, aluminum, phosphorus, silicon, cerium, ytterbium, samarium, erbium, yttrium, lanthanum, gadolinium, dysprosium, neodymium, oxygen, barium oxide, calcium oxide, activated carbon, and zeolite. Including at least one of
An electro-optical device. The electro-optic element is an organic electroluminescence element;
The electro-optical device according to any one of claims 18 to 24. The electro-optical device according to any one of claims 18 to 25,
And a sealing layer formed above the second electrode,
The sealing layer is made of at least one of ceramic, silicon nitride, silicon oxynitride, and silicon oxide;
An electro-optical device. The electro-optical device according to any one of claims 18 to 25,
A protective film is provided above the second electrode;
An electro-optical device. The electro-optical device according to claim 27,
The protective film contains at least one of a desiccant and a chemical adsorbent;
An electro-optical device. The electro-optical device according to any one of claims 18 to 28,
The light emitted from the electro-optic element is taken out of the electro-optic device from the substrate side;
An electro-optical device. A circuit board according to any one of claims 1 to 16, or an electro-optical device according to any one of claims 17 to 29,
Electronic equipment characterized by

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