JP4015045B2 - WIRING BOARD, ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - Google Patents

Description

【００９７】
上記に示した材料以外に、例えば、ポリ（パラフェニレン）、ポリアルキルフルオレン等が挙げられるが、化学式（３）に示すようなポリアルキルフルオレン（具体的には化学式（４）に示すようなポリアルキルフルオレン系共重合体）が特に好ましい。
【００９８】
【化２】

【００９９】
【化３】

【０１００】
なお、前記高分子発光材料は、ランダム、ブロックまたはグラフト共重合体であってもよいし、それらの中間的な構造を有する高分子、例えばブロック性を帯びたランダム共重合体であってもよい。発光の量子収率の高い高分子発光材料を得る観点からは完全なランダム共重合体よりブロック性を帯びたランダム共重合体やブロックまたはグラフト共重合体が好ましい。また、ここで形成する有機ＥＬ素子は、薄膜からの発光を利用することから、高分子発光材料は固体状態で良好な発光量子収率を有するものが用いられる。
【０１０１】
上記の材料のうち、発光層を形成する際の温度において液状の材料、あるいは所望の溶媒に対して良好な溶解性を示す材料を、インクジェット法などの液体材料を用いた発光層の形成に用いることができる。該溶媒としては、例えば、クロロホルム、塩化メチレン、ジクロロエタン、テトラヒドロフラン、トルエン、キシレンなどが好適に用いられる。高分子発光材料の構造や分子量にもよるが、通常はこれらの溶媒に０．１ｗｔ％以上溶解させることができる。
【０１０２】
また、前記高分子発光材料としては、分子量がポリスチレン換算で１０³〜１０⁷であることが好ましい場合があるが、分子量１０³以下のオリゴマーも使用することができる。
【０１０３】
所望の高分子発光材料に応じた合成法を採用することにより、当該所望の高分子発光材料を得ることができる。例えば、アリーレン基にアルデヒド基が２つ結合したジアルデヒド化合物と、アリーレン基にハロゲン化メチル基が２つ結合した化合物とトリフェニルホスフィンとから得られるジホスホニウム塩からのＷｉｔｔｉｇ反応が例示される。また、他の合成法としては、アリーレン基にハロゲン化メチル基が２つ結合した化合物からの脱ハロゲン化水素法が例示される。さらに、アリーレン基にハロゲン化メチル基が２つ結合した化合物のスルホニウム塩をアルカリで重合して得られる中間体から熱処理により該高分子発光材料を得るスルホニウム塩分解法が例示される。
【０１０４】
さらに具体的に、前記高分子発光材料の１つの例であるアリーレンビニレン系共重合体の合成法を説明する。例えば、Ｗｉｔｔｉｇ反応により高分子発光材料を得る場合には、例えば、まず、ビス（ハロゲン化メチル）化合物、より具体的には、例えば２，５−ジオクチルオキシ−ｐ−キシリレンジブロミドをＮ，Ｎ−ジメチルホルムアミド溶媒中、トリフェニルホスフィンと反応させてホスホニウム塩を合成し、これとジアルデヒド化合物、より具体的には、例えば、テレフタルアルデヒドとを、例えばエチルアルコール中、リチウムエトキシドを用いて縮合させるＷｉｔｔｉｇ反応により、フェニレンビニレン基と２，５−ジオクチルオキシ−ｐ−フェニレンビニレン基を含む高分子発光材料が得られる。このとき、共重合体を得るために２種類以上のジホスホニウム塩および／または２種類以上のジアルデヒド化合物を反応させてもよい。
【０１０５】
【化４】

【０１０６】
これらの高分子発光材料を発光層の形成材料として用いる場合、その純度が発光特性に影響を与えるため、合成後、例えば、再沈精製、クロマトグラフなどによる分別等の精製処理をすることが望ましい。
【０１０７】
高分子材料の溶解性の低い材料の場合など、例えば、対応する前駆体が塗布した後、化学式（５）に示すように加熱硬化されることによって発光層を得ることができるものがある。例えば、ポリフェニレン−ビニレンが発光層を構成する高分子発光材料である場合、対応する前駆体のスルホニウム塩を発光層となる部位に配置した後、加熱処理することによりスルホニウム基が脱離し、発光層として機能するポリフェニレン−ビニレンを得ることができる。
【０１０８】
発光層を形成し得る低分子材料としては、可視域の発光を示す物質ならば、基本的に使用可能である。中でも芳香族系の置換基を有する材料が好適である。例えば、アルミキノリノール錯体（Ａｌｑ₃）やジスチリルビフェニル、さらに化学式（６）に示すＢｅＢｑ₂やＺｎ（ＯＸＺ）₂等の従来より一般的に用いられているものに加え、ピラゾリンダイマー、キノリジンカルボン酸、ベンゾピリリウムパークロレート、ベンゾピラノキノリジン、ルブレン、フェナントロリンユウロピウム錯体等が挙げられる。
【０１０９】
上記に代表される高分子材料及び低分子材料から、青色、緑色、及び赤色の発光を示す材料を適宜選択し、所定の位置に配置すればカラー表示が可能である。所定の位置に配置する際は、マスク蒸着法、印刷法、あるいはインクジェット法などが使用することができる。
【０１１０】
【化５】

【０１１１】
発光層を、媒質として機能するゲストにホストを分散させた、いわゆるホスト／ゲスト型発光層とすることもできる。
ホスト／ゲスト型発光層において、当該発光層の発光色を決定するのは、基本的にはゲスト材料であるので、所望の発光色に応じてゲスト材料を選択することができる。一般には、効率良く蛍光を発する材料が用いられる。ホスト材料は、基本的には、ゲスト材料の発光に関与する励起状態の準位より高いエネルギー準位を有する材料がホスト材料として好適である。キャリアの移動度が高い材料であることも要求される場合があるが、その場合は、上述の高分子発光体の中から選択することもできる。
青色発光を示すゲスト材料としては、例えば、コロネン類、ジスチリルビフェニル類などが挙げられ、緑色発光を示すゲスト材料としては、例えば、キナクリドン類、ルブレン類、などが挙げられ、赤色発光を示すゲスト材料としては、蛍光色素としては、赤色発光を示すゲスト材料としては、例えば、ローダミン類が挙げられる。
ホスト材料は、ゲスト材料に応じて適宜選択することができる。数例を挙げれば、ホスト材料及びゲスト材料を、それぞれ、Ｚｎ（ＯＸＺ）₂及びコロネンとした発光層を形成することにより青色発光を示す発光層が得られる。
ゲスト材料としては燐光材料も使用することができる。例えば、化学式（７）に示すＩｒ（ｐｐｙ）₃ 、Ｐｔ（ｔｈｐｙ）₂、ＰｔＯＥＰなどが好適に用いられる。
【０１１２】
【化６】

【０１１３】
なお、前記の化学式（７）に示した燐光物質をゲスト材料とした場合、ホスト材料としては、例えば、化学式（８）に示すＣＢＰ、ＤＣＴＡ、ＴＣＰＢ、あるいはＡｌｑ₃などが好適に用いられる。
なお、ホスト／ゲスト型発光層は、共蒸着法、あるいはホスト材料とゲスト材料あるいはそれらの前駆体を液状化したものを塗布する方法などにより形成される。
【０１１４】
【化７】

【０１１５】
また、上述した例では、発光層の下層として正孔輸送層を形成し、上層として電子輸送層を形成したが、本発明はこれに限定されることなく、例えば正孔輸送層と電子輸送層とのうちの一方のみを形成するようにしてもよく、また、正孔輸送層に代えて正孔注入層を形成するようにしてもよく、さらに発光層のみを単独で形成するようにしてもよい。
【０１１６】
さらに、正孔注入層、正孔輸送層、発光層、電子輸送層に加えて、ホールブロッキング層を例えば発光層の対向電極側に形成して、発光層の長寿命化を図ってもよい。このようなホールブロッキング層の形成材料としては、例えば化学式（９）に示すＢＣＰや化学式（１０）で示すＢＡｌｑが用いられるが、長寿命化の点ではＢＡｌｑの方が好ましい。
【０１１７】
【化８】

【０１１８】
【化９】

【０１１９】
なお、以上のように作成された電気光学装置は、アクティブ方式及びパッシブ方式のいずれの方式によっても駆動できることは明らかである。
【０１２０】
図１５〜２０は、本発明の電子機器の実施例を示している。
本例の電子機器は、上述した有機ＥＬ表示装置等の本発明の電気光学装置を表示手段として備えている。
図１５は、テレビ画像やコンピュータ送られる文字や画像を表示する表示装置の一例を示している。図１５において、符号１０００は本発明の電気光学装置を用いた表示装置本体を示している。なお、表示装置本体１０００は、上述した有機ＥＬ表示装置を用いることにより、大画面にも対応できる。
また、図１６は、車載用のナビゲーション装置の一例を示している。図１６において、符号１０１０はナビゲーション装置本体を示し、符号１０１１は本発明の電気光学装置を用いた表示部（表示手段）を示している。
また、図１７は、携帯型の画像記録装置（ビデオカメラ）の一例を示している。図１７において、符号１０２０は記録装置本体を示し、符号１０２１は本発明の電気光学装置を用いた表示部を示している。
また、図１８は、携帯電話の一例を示している。図１８において、符号１０３０は携帯電話本体を示し、符号１０３１は本発明の電気光学装置を用いた表示部（表示手段）を示している。
また、図１９は、ワープロ、パソコンなどの情報処理装置の一例を示している。図１９において、符号１０４０は情報処理装置を示し、符号１０４１は情報処理装置本体、符号１０４２はキーボードなどの入力部、符号１０４３は本発明の電気光学装置を用いた表示部を示している。
また、図２０は、腕時計型電子機器の一例を示している。図２０において、符号１０５０は時計本体を示し、符号１０５１は本発明の電気光学装置を用いた表示部を示している。
図１５〜図２０に示す電子機器は、本発明の電気光学装置を表示手段として備えているので、耐久性及び品質の優れた表示を実現することができる。
【０１２１】
以上、添付図面を参照しながら本発明に係る好適な実施例について説明したが、本発明は係る例に限定されないことは言うまでもない。上述した例において示した各構成部材の諸形状や組み合わせ等は一例であって、本発明の主旨から逸脱しない範囲において設計要求等に基づき種々変更可能である。
【０１２２】
【発明の効果】
本発明の基板及びその製造方法によれば、例えば、導電性部位によって生じる寄生容量を小さくすることができるなど、性能が安定した基板を実現できる。
【０１２３】
また、本発明の電子装置及びその製造方法によれば、機能膜の性能を良好に発揮でき、動作の高速化に適していることから、大画面化が可能でかつ長期にわたって安定に動作する電気光学装置を実現できる。
【０１２４】
また、本発明の電子機器によれば、本発明の電子装置を表示手段として備えることから、追従性の良い安定した表示動作を行うことができる。
【図面の簡単な説明】
【図１】 本発明の電気光学装置及び基板の断面構造を概念的に示す図である。
【図２】 本発明の実施の形態例である有機ＥＬ表示装置の構成を模式的に示す図である。
【図３】 アクティブマトリクス型の有機ＥＬ表示装置の回路の一例を示す回路図である。
【図４】 画素領域（有機ＥＬ装置）の断面構造を模式的に示しており、（ａ）はトップエミッション型、（ｂ）はバックエミッション型を示している。
【図５】 仕切り部材の平面構造の形態例を示している。
【図６】 トップエミッション型の画素領域（有機ＥＬ装置）の断面構造を拡大して示す図である。
【図７】 本発明の電気光学装置の製造方法を有機ＥＬ素子を備える表示装置を製造するプロセスに適用した実施例を説明するための図である。
【図８】 本発明の電気光学装置の製造方法を有機ＥＬ素子を備える表示装置を製造するプロセスに適用した実施例を説明するための図である。
【図９】 本発明の電気光学装置の製造方法を有機ＥＬ素子を備える表示装置を製造するプロセスに適用した実施例を説明するための図である。
【図１０】 本発明の電気光学装置の製造方法を有機ＥＬ素子を備える表示装置を製造するプロセスに適用した実施例を説明するための図である。
【図１１】 本発明の電気光学装置の製造方法を有機ＥＬ素子を備える表示装置を製造するプロセスに適用した実施例を説明するための図である。
【図１２】 有機ＥＬ装置の他の形態例を示す図である。
【図１３】 有機ＥＬ装置の他の形態例を示す図である。
【図１４】 有機ＥＬ表示装置の回路の他の例を示す図である。
【図１５】 本発明の電子機器の実施例を示す図である。
【図１６】 本発明の電子機器の他の実施例を示す図である。
【図１７】 本発明の電子機器の他の実施例を示す図である。
【図１８】 本発明の電子機器の他の実施例を示す図である。
【図１９】 本発明の電子機器の他の実施例を示す図である。
【図２０】 本発明の電子機器の他の実施例を示す図である。
【符号の説明】
１０，１００…有機ＥＬ表示装置（電気光学装置）
１１…配線基板
１５１，１２１…基材
１６，１４２，１４３…ＴＦＴ（能動素子）
１７，１０２…発光領域
１８，２８１…仕切り部材
２０，２７１…バリア層
２１，２７２…保護膜
１４０…有機ＥＬ素子（機能膜）[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electronic device such as an electro-optical device or a semiconductor device, a wiring board suitable for the electronic device, and an electro-optical device suitable for a display device.
[0002]
[Prior art]
Examples of the display device include a liquid crystal element and an electro-optical device such as a liquid crystal display device and an organic EL display device provided with an organic electroluminescence (hereinafter referred to as organic EL) element. In particular, the organic EL display device is excellent in display performance because it is self-luminous with high brightness, can be driven by a DC low voltage, and has a high response speed. In addition, the display device can be reduced in thickness, weight, and power consumption (see, for example, Patent Document 1).
[0003]
[Patent Document 1]
International Publication No. WO98 / 36406 Pamphlet
[0004]
[Problems to be solved by the invention]
By the way, it is known that an electro-optical device has a problem in a data rewrite operation due to a parasitic capacitance generated between wirings. The inter-wiring capacitance depends on the wiring length and becomes larger as the wiring becomes longer. For example, when the electro-optical device is used as a display device, it causes a large screen.
In recent years, in a semiconductor device such as a memory, there is a problem of a capacitance generated between conductive parts such as wiring in the present situation where high integration and a high-speed operation are required at the same time.
[0005]
The present invention has been made in view of the above problems, and includes a wiring board suitable for stabilizing performance, an electro-optical device capable of increasing the screen size and operating stably over a long period of time, and an electronic apparatus using these. The purpose is to provide.
[0006]
[Means for solving the problems]
A wiring board according to the present invention is an electronic device comprising a plurality of functional films provided between a counter electrode and a plurality of pixel electrodes each disposed in one pixel region of a plurality of pixel regions, Each of the plurality of functional films is used for manufacturing an electronic device including an electro-optic material, and each of the plurality of functional films is one functional film of the plurality of functional films via one pixel electrode of the plurality of pixel electrodes. A wiring board including a plurality of active elements that controls the substrate, a plurality of semiconductor films provided above the substrate, each of which is included in the plurality of active elements, and covers the plurality of semiconductor films A gate insulating film included in the plurality of active elements, a first interlayer insulating film, a second interlayer insulating film formed above the first interlayer insulating film, and each of the first interlayer insulating film Through the first contact hole formed in the insulating film A plurality of conductive films connected to one semiconductor layer of the plurality of semiconductor films, and a partition member having a plurality of openings provided corresponding to the arrangement of the plurality of pixel areas, said partition member Top and side A plurality of pixel electrodes disposed corresponding to the plurality of openings, boron, carbon, and carbon disposed between the second interlayer insulating film and the plurality of pixel electrodes; A sealing layer that is an insulating film containing at least one element of nitrogen and at least one element of aluminum, silicon, and phosphorus; A barrier layer disposed between the second interlayer insulating film and the partition member; With The barrier layer covers the bottom surface of the partition member, Each of the plurality of pixel electrodes is connected to one conductive film of the plurality of conductive films through a second contact hole formed in the second interlayer insulating film, and the relative dielectric constant of the partition member Is 4 or less.
Another wiring board according to the present invention is an electronic device including a plurality of functional films provided between a counter electrode and a plurality of pixel electrodes each disposed in one pixel region of the plurality of pixel regions. Each of the plurality of functional films is used for manufacturing an electronic device including an electro-optic material, and each of the plurality of functional films is one of the plurality of functional films via one pixel electrode of the plurality of pixel electrodes. A wiring substrate including a plurality of active elements for controlling a functional film, the substrate, a plurality of semiconductor films provided above the substrate, each included in the plurality of active elements, and the plurality of semiconductor films A gate insulating film included in the plurality of active elements, a first interlayer insulating film, and a second interlayer insulating film formed above the first interlayer insulating film, and 1st contact hole formed in 1 interlayer insulation film A plurality of conductive films connected to one semiconductor layer of the plurality of semiconductor films by a partition member having a plurality of openings provided corresponding to the arrangement of the plurality of pixel areas, said partition member Top and side A protective film covering the plurality of openings, the plurality of pixel electrodes disposed corresponding to the plurality of openings, and silicon, aluminum, and nitrogen disposed between the second interlayer insulating film and the plurality of pixel electrodes. A sealing layer that is an insulating film containing at least one of oxygen and rare earth elements; A barrier layer disposed between the second interlayer insulating film and the partition member; With The barrier layer covers the bottom surface of the partition member, Each of the plurality of pixel electrodes is connected to one conductive film of the plurality of conductive films through a second contact hole formed in the second interlayer insulating film, and the relative dielectric constant of the partition member Is 4 or less.
Another wiring board according to the present invention is an electronic device including a plurality of functional films provided between a counter electrode and a plurality of pixel electrodes each disposed in one pixel region of the plurality of pixel regions. Each of the plurality of functional films is used for manufacturing an electronic device including an electro-optic material, and each of the plurality of functional films is one of the plurality of functional films via one pixel electrode of the plurality of pixel electrodes. A wiring substrate including a plurality of active elements for controlling a functional film, the substrate, a plurality of semiconductor films provided above the substrate, each included in the plurality of active elements, and the plurality of semiconductor films A gate insulating film included in the plurality of active elements, a first interlayer insulating film, and a second interlayer insulating film formed above the first interlayer insulating film, and 1st contact hole formed in 1 interlayer insulation film A plurality of conductive films connected to one semiconductor layer of the plurality of semiconductor films by a partition member having a plurality of openings provided corresponding to the arrangement of the plurality of pixel areas, said partition member Top and side A protective film covering the plurality of openings, the plurality of pixel electrodes disposed corresponding to the plurality of openings, and a ceramic, silicon nitride disposed between the second interlayer insulating film and the plurality of pixel electrodes, And a sealing layer made of any of silicon oxynitride, A barrier layer disposed between the second interlayer insulating film and the partition member; With The barrier layer covers the bottom surface of the partition member, Each of the plurality of pixel electrodes is connected to one conductive film of the plurality of conductive films through a second contact hole formed in the second interlayer insulating film, and the relative dielectric constant of the partition member Is 4 or less.
Another wiring board according to the present invention is an electronic device including a plurality of functional films provided between a counter electrode and a plurality of pixel electrodes each disposed in one pixel region of the plurality of pixel regions. Each of the plurality of functional films is used for manufacturing an electronic device including an electro-optic material, and each of the plurality of functional films is one of the plurality of functional films via one pixel electrode of the plurality of pixel electrodes. A wiring substrate including a plurality of active elements for controlling a functional film, the substrate, a plurality of semiconductor films provided above the substrate, each included in the plurality of active elements, and the plurality of semiconductor films A gate insulating film included in the plurality of active elements, a first interlayer insulating film, and a second interlayer insulating film formed above the first interlayer insulating film, and 1st contact hole formed in 1 interlayer insulation film A plurality of conductive films connected to one semiconductor layer of the plurality of semiconductor films by a partition member having a plurality of openings provided corresponding to the arrangement of the plurality of pixel areas, said partition member Top and side A plurality of pixel electrodes disposed corresponding to the plurality of openings, and silicon oxide disposed between the second interlayer insulating film and the plurality of pixel electrodes. Sealing layer, A barrier layer disposed between the second interlayer insulating film and the partition member; With The barrier layer covers the bottom surface of the partition member, Each of the plurality of pixel electrodes is connected to one conductive film of the plurality of conductive films through a second contact hole formed in the second interlayer insulating film, and a relative dielectric constant of the partition member is 4 or less.
In the above wiring board, the material of the first interlayer insulating film may be different from the material of the second interlayer insulating film.
In the above wiring board, it is preferable that the first contact hole and the second contact hole are formed so as not to overlap each other.
In the above wiring board, the plurality of conductive films may be formed on the first interlayer insulating film.
In the above wiring board, the sealing layer may suppress penetration of gas or metal ions.
In the above wiring board, the relative permittivity of the partition member may be lower than the relative permittivity of the substrate.
In the above wiring board, the partition member may have a relative dielectric constant of 3 or less.
In the above wiring board, a relative dielectric constant of the partition member may be 2.5 or less.
In the above wiring board, the sealing layer may have a thickness of 50 nm to 500 nm.
In the above wiring board, the sealing layer may have a heat dissipation effect.
In the above wiring board, the partition member is made of silica glass, an alkylsiloxane polymer, an alkylsilsesquioxane polymer, a hydrogenated alkylsilsesquioxane polymer, a polyarylether, a spin-on-glass film, a diamond film, And at least one of fluorinated amorphous carbon film.
In the above wiring board, the partition member may be made of a porous material.
In the above wiring board, the partition member is at least one of aerogel, porous silica, gel in which fine particles of magnesium fluoride are dispersed, a fluorine-based polymer, a porous polymer, and a predetermined material containing fine particles. May be included.
In the above wiring board, the surface of the protective film may be subjected to a liquid repellent treatment.
In the above wiring board, the protective film may maintain the relative dielectric constant of the partition member by suppressing permeation of a substance.
An electronic device according to the present invention includes the above wiring board, the plurality of functional films, and the counter electrode, each of the plurality of functional films being one pixel electrode of the plurality of pixel electrodes. It is arranged corresponding to.
An electronic apparatus according to the present invention includes the electronic device described above.
The first wiring board of the present invention includes a base including wiring and a member having a relative dielectric constant of 4 or less disposed on the upper surface of the base, and the upper surface is a region where the member is not formed. Is provided.
[0007]
Since the normal silicon oxide film has a dielectric constant of 4.2, the member has a low dielectric constant. According to the wiring board of the present invention, since a member having a low dielectric constant of 4 or less is disposed, for example, an electro-optic material is disposed in a region where the above-described member is not formed, and an electrode or the like is disposed thereon. When the conductive portion is formed, the parasitic capacitance generated by the conductive portion and the wiring can be reduced.
[0008]
The second wiring board of the present invention includes a base including an insulating substrate and wiring, and a member disposed on the top surface of the base, and a region where the member is not formed is provided on the top surface of the base. The wiring is disposed between the insulating substrate and the upper surface, and the dielectric constant of the member is lower than the dielectric constant of the insulating substrate.
When the insulating substrate is used for a display device or the like, for example, quartz or glass is preferably used as the insulating substrate. In such a case, the dielectric constant of the member is preferably 4 or less.
In the above wiring board, the dielectric constant of the member is preferably 3 or less, and more preferably 2.5 or less. A plurality of the regions may be provided on the base.
[0009]
Further, in the above wiring board, for example, when the base includes an active element, the parasitic element is reduced, so that the active element can be operated by a higher frequency or high speed drive signal. Examples of the active element include a semiconductor element such as a transistor and a two-terminal element such as MIM.
[0010]
In the above substrate, the member may be, for example, a silica glass, an alkylsiloxane polymer, an alkylsilsesquioxane polymer, a hydrogenated alkylsilsesquioxane polymer, or a spin-on-glass film containing a polyarylether, diamond Films, and fluorinated amorphous carbon films.
The member may be made of a porous material.
Specific examples include airgel, porous silica, gel in which fine particles of magnesium fluoride are dispersed, a fluorine-based polymer, a porous polymer, and a material containing fine particles in a predetermined material.
[0011]
The electronic device according to the present invention is characterized in that a functional film is disposed corresponding to the region of the substrate described above.
In the electronic device, the member having a relatively low dielectric constant is disposed between the functional films, so that parasitic capacitance generated between the functional films can be reduced.
In the above electronic device, when a conductive film such as an electrode is disposed above the functional film, the wiring and the electrode are separated from each other by the member. Thus, the parasitic capacitance generated can be reduced. In particular, when the wiring supplies a signal, problems such as signal delay and rounding can be reduced. Here, the conductive film forming material includes, for example, an organic conductive material, an inorganic conductive material (metal or the like), and a mixture thereof.
Here, in the above-described electronic device, the present invention is not limited to the electronic device in which the member is disposed all around the functional film.
[0012]
The first electro-optical device of the present invention includes a base including an insulating substrate and wiring, a plurality of pixel electrodes disposed on an upper surface of the base, a counter electrode disposed above the pixel electrode, and the plurality A functional film including an electro-optic material disposed between each of the pixel electrodes and the counter electrode; and a member provided around the functional film and disposed between the counter electrode and the upper surface; The dielectric constant of the member is lower than the dielectric constant of the insulating substrate.
In the electro-optical device, it is preferable to use quartz, glass, or the like as the insulating substrate. In such a case, the dielectric constant of the member is preferably 4 or less.
[0013]
The second electro-optical device of the present invention includes a base including wiring, a plurality of pixel electrodes disposed on an upper surface of the base, a counter electrode disposed above the pixel electrode, and the plurality of pixel electrodes. A functional film including an electro-optic material disposed between each of the counter electrode and the counter electrode, and a member provided around the functional film and disposed between the counter electrode and the upper surface, The member has a dielectric constant of 4 or less.
In the above electro-optical device, the dielectric constant of the member is more preferably 3 or less, or 2.5 or less.
[0014]
Examples of the electro-optic material include materials used for liquid crystal elements, electrophoretic elements, and electron-emitting elements in addition to organic electroluminescent materials.
In the electro-optical device, the base may further include an active element connected to the pixel electrode, and the wiring may include a signal wiring that supplies a signal to the active element.
Examples of the active element include a semiconductor element such as a transistor and a two-terminal element such as MIM.
[0015]
In the above electro-optical device, the member includes, for example, a spin-on-glass film containing any one of silica glass, alkylsiloxane polymer, alkylsilsesquioxane polymer, hydrogenated alkylsilsesquioxane polymer, and polyarylether. Diamond films, fluorinated amorphous carbon films, and the like.
The member may be made of a porous material.
Specific examples include airgel, porous silica, gel in which fine particles of magnesium fluoride are dispersed, a fluorine-based polymer, a porous polymer, and a material containing fine particles in a predetermined material.
[0016]
In the above electro-optical device, a barrier layer that suppresses permeation of a substance may be provided between the member and the active element.
When a material having a low dielectric constant is used as the member, since the low dielectric constant material is generally a porous material or a low density material, a substance such as metal or oxygen is likely to pass therethrough. As a result, problems such as deterioration of active elements and corrosion of wiring may occur. On the other hand, by providing the barrier layer between the member and the active element, it is possible to suppress permeation of a substance that causes deterioration or corrosion.
[0017]
In the electro-optical device, at least a part of the member may be covered with a protective film that prevents a substance from passing therethrough.
Since the material easily permeates the member, diffusion of the material through the member is suppressed by covering at least a part of the member with the protective film. As a result, the corrosion or deterioration of the wiring inside the electro-optical device or the active element can be reduced. Further, since many low dielectric constant materials are generally mechanically fragile, there is an effect of mechanical reinforcement by providing a protective film on the member.
[0018]
An electronic apparatus according to the present invention includes the electronic device described above as a display unit.
According to the electronic device of the present invention, by reducing the parasitic capacitance, for example, a stable display operation with good followability can be performed with respect to a high frequency or high speed input signal.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
The present invention will be described in detail below.
FIG. 1 conceptually shows a cross-sectional structure of an electro-optical device and a substrate according to the present invention. Reference numeral 10 denotes an electro-optical device, and reference numeral 11 denotes a wiring board. The wiring substrate 11 is of a multilayer wiring type including an active element 16 such as a thin film transistor (TFT) provided on a base material 15 and an insulating layer. In the electro-optical device 10, a plurality of light emitting regions 17 including a light emitting layer as a functional film are provided on a wiring substrate 11, and the light emission state is controlled via an active element 16. A partition member (bank) 18 as an insulating layer is provided at the boundary between the plurality of light emitting regions 17.
[0020]
The electro-optical device 10 according to the present invention is characterized in that the partition member 18 is formed of a low dielectric constant material. By forming the partition member 18 from a low dielectric constant material, parasitic capacitance generated between conductive parts such as wiring is reduced.
The dielectric constant (relative dielectric constant) of the low dielectric constant material is, for example, preferably 4 or less, more preferably 3 or less, and even more preferably 2.5 or less. In particular, when the low dielectric constant material is made of a porous material having a high porosity, the low dielectric constant material having the low dielectric constant described above can be obtained.
[0021]
As a method of forming the partition member 18 with a low dielectric constant material, for example, after forming a layer using various coating methods, CVD methods (chemical vapor deposition methods), etc., patterning is performed by etching, ashing, or the like. The partition member 18 having the shape can be obtained.
[0022]
Low dielectric constant materials include, for example, silica glass, alkyl siloxane polymers, alkyl silsesquioxane polymers, hydrogenated alkyl silsesquioxane polymers, spin-on glass films containing any of polyaryl ethers, diamond films, and fluorine. And amorphous carbon film.
[0023]
Furthermore, as a low dielectric constant material, for example, aerogel, porous silica, a gel in which fine particles of magnesium fluoride are dispersed, a fluorine-based polymer, a porous polymer, and a material containing fine particles in a predetermined material may be used. Good.
[0024]
Examples of the airgel include silica airgel and airgel based on alumina. Silica airgel is a porous body having a uniform ultrafine structure obtained by supercritical drying of a wet gel formed by a sol-gel reaction of silicon alkoxide. Silica aerogel is fine tens of nanometers of tens of nm in which voids occupy 90% or more of the volume, and the rest is agglomerated in dendritic form ₂ A material composed of particles. Further, the dielectric constant can be adjusted by changing the porosity.
Silica airgel is manufactured through a step of producing a wet gel by a sol-gel method, a step of aging a wet gel, and a supercritical drying step of drying the wet gel by a supercritical drying method to obtain an airgel. The supercritical drying method is a method suitable for drying a gel material without contracting the gel by replacing and removing the liquid in the jelly-like gel material consisting of a solid phase and a liquid phase with a supercritical fluid. Thus, an airgel having a high porosity can be obtained.
The supercritical drying method described above may be used when forming the spin-on-glass film. Coverage and film quality can be further improved by using the supercritical drying method.
[0025]
When the partition member 18 is formed of silica aerogel, the wet gel is applied on the substrate by a coating method and then supercritical drying is performed. However, a synthetic resin (organic substance) may be mixed in the wet gel. The synthetic resin in this case is a synthetic resin whose heat denaturation temperature is higher than the critical temperature of the supercritical fluid. For example, when alcohol is used as the supercritical fluid, examples of the synthetic resin whose heat denaturation temperature is higher than the critical temperature of alcohol include hydroxylpropyl cellulose (HPC), polyvinyl butyral (PVB), and ethyl cellulose (EC) ( PVB and EC are soluble in alcohol and insoluble in water). When using ether as the solvent, select chlorinated polyethylene or the like as the resin, ₂ When using as a solvent, it is desirable to select HPC or the like.
[0026]
Porous silica (SiO with porosity) ₂ Film) is formed by plasma CVD (plasma chemical vapor deposition), and SiH is used as a reactive gas. ₄ And N ₂ O is used. Furthermore, this SiO ₂ On the film, porous SiO ₂ A film is formed. This SiO ₂ The film is formed by atmospheric pressure CVD (atmospheric pressure chemical vapor deposition), and TEOS (tetraethoxysilane) and O ₂ (Oxygen) and low concentrations of O _Three A reactive gas containing (ozone) is used. Here, a low concentration of O _Three Is a concentration lower than that required for the oxidation of TEOS. _Three Say.
[0027]
Examples of the fluorine-based polymer or a material containing the same include a perfluoroalkyl-polyether, a perfluoroalkylamine, or a perfluoroalkyl-polyether-perfluoroalkylamine mixed film. Further, a predetermined polymer binder may be mixed with a soluble or dispersible fluorocarbon compound.
As the polymer binder, polyvinyl alcohol, polyacrylic acid, polyvinyl pyrrolidone, polyvinyl sulfonic acid sodium salt, polyvinyl methyl ether, polyethylene glycol, poly α-trifluoromethyl acrylic acid, polyvinyl methyl ether-co-maleic anhydride, polyethylene glycol- Examples include co-propylene glycol and polymethacrylic acid.
Examples of the fluorocarbon compound include perfluorooctanoic acid-ammonium salt, perfluorooctanoic acid-tetramethylammonium salt, perfluoroalkylsulfonic acid ammonium salt of C-7 and C-10, and perfluorooctanoic acid ammonium salt of C-7 and C-10. Examples include tetramethylammonium fluoroalkylsulfonic acid salts, fluorinated alkyl quaternary ammonium iodides, perfluoroadipic acid, and quaternary ammonium salts of perfluoroadipic acid.
[0028]
The low dielectric constant material may use fine particles to form voids between or within the fine particles. As the fine particles, inorganic fine particles or organic fine particles can be used. The inorganic fine particles are preferably amorphous. The inorganic fine particles are preferably made of a metal oxide, nitride, sulfide or halide, more preferably a metal oxide or metal halide, and most preferably a metal oxide or metal fluoride. . As metal atoms, Na, K, Mg, Ca, Ba, Al, Zn, Fe, Cu, Ti, Sn, In, W, Y, Sb, Mn, Ga, V, Nb, Ta, Ag, Si, B Bi, Mo, Ce, Cd, Be, Pb and Ni are preferred, and Mg, Ca, B and Si are more preferred. An inorganic compound containing two kinds of metals may be used. A particularly preferred inorganic compound is silicon dioxide, ie silica.
[0029]
The microvoids in the inorganic fine particles can be formed, for example, by cross-linking silica molecules forming the particles. Crosslinking silica molecules reduces the volume and makes the particles porous. (Porous) inorganic fine particles having microvoids are described in the sol-gel method (described in JP-A Nos. 53-112732 and 57-9051) or the precipitation method (APPLIED OPTICS, 27, page 3356 (1988)). ) Can be directly synthesized as a dispersion. Further, the powder obtained by the drying / precipitation method can be mechanically pulverized to obtain a dispersion. Commercially available porous inorganic fine particles (for example, silicon dioxide sol) may be used. The inorganic fine particles having microvoids are preferably used in a state dispersed in an appropriate medium. As the dispersion medium, water, alcohol (eg, methanol, ethanol, isopropyl alcohol) and ketone (eg, methyl ethyl ketone, methyl isobutyl ketone) are preferable.
[0030]
The organic fine particles are also preferably amorphous. The organic fine particles are preferably polymer fine particles synthesized by polymerization reaction of monomers (for example, emulsion polymerization method). The organic fine particle polymer preferably contains a fluorine atom. Examples of the monomer containing a fluorine atom used for synthesizing the fluorine-containing polymer include fluoroolefins (eg, fluoroethylene, vinylidene fluoride, tetrafluoroethylene, hexafluoropropylene, perfluoro-2,2-dimethyl-1 , 3-dioxole), fluorinated alkyl esters of acrylic acid or methacrylic acid and fluorinated vinyl ethers. A copolymer of a monomer containing a fluorine atom and a monomer not containing a fluorine atom may be used. Examples of monomers that do not contain fluorine atoms include olefins (eg, ethylene, propylene, isoprene, vinyl chloride, vinylidene chloride), acrylic esters (eg, methyl acrylate, ethyl acrylate, 2-ethylhexyl acrylate). , Methacrylates (eg, methyl methacrylate, ethyl methacrylate, butyl methacrylate), styrenes (eg, styrene, vinyl toluene, α-methyl styrene), vinyl ethers (eg, methyl vinyl ether), vinyl esters ( Examples include vinyl acetate, vinyl propionate), acrylamides (eg, N-tert-butylacrylamide, N-cyclohexylacrylamide), methacrylamides and acrylonitriles.
[0031]
The microvoids in the organic fine particles can be formed, for example, by crosslinking a polymer that forms the particles. Crosslinking the polymer reduces the volume and makes the particles porous. In order to crosslink the polymer forming the particles, it is preferable to use 20 mol% or more of the monomer for synthesizing the polymer as a polyfunctional monomer. The ratio of the polyfunctional monomer is more preferably 30 to 80 mol%, and most preferably 35 to 50 mol%. Examples of polyfunctional monomers include dienes (eg, butadiene, pentadiene), esters of polyhydric alcohols and acrylic acid (eg, ethylene glycol diacrylate, 1,4-cyclohexane diacrylate, dipentaerythritol hexaacrylate), Esters of polyhydric alcohol and methacrylic acid (eg, ethylene glycol dimethacrylate, 1,2,4-cyclohexanetetramethacrylate, pentaerythritol tetramethacrylate), divinyl compounds (eg, divinylcyclohexane, 1,4-divinylbenzene), divinyl Sulfones, bisacrylamides (eg, methylene bisacrylamide) and bismethacrylamides are included. Microvoids between particles can be formed by stacking at least two fine particles.
[0032]
As the low dielectric constant material, a material having fine pores and fine inorganic particles may be used. In this case, after forming a layer of the above-mentioned material by coating, an activated gas treatment is performed, and fine vacancies are formed by releasing the gas from the layer.
Also, two or more types of ultrafine particles (for example, MgF ₂ And SiO ₂ ) May be mixed. In this case, the ultrafine particles are SiO 2 generated by the thermal decomposition of ethyl silicate. ₂ It is adhered by. In the thermal decomposition of ethyl silicate, carbon dioxide and water vapor are also generated by combustion of the ethyl portion. As carbon dioxide and water vapor separate from the layer, a gap is formed between the ultrafine particles.
In addition, a layer may be formed by containing an inorganic fine powder made of porous silica and a binder, or a layer in which voids are formed between fine particles by stacking two or more fine particles made of a fluoropolymer. May be.
[0033]
Further, as the low dielectric constant material, a substance capable of improving the porosity at the molecular structure level, for example, a polymer having a branched structure such as a dendrimer may be used.
[0034]
Between the partition member 18 and the active element 16, it is preferable to provide a barrier layer 20 that prevents the passage of metal. Since the partition member 18 formed of a low dielectric constant material is often made of a porous material, a substance such as a metal can easily pass therethrough. When the metal that has passed through the partition member 18 enters the active element 16, a chemical reaction occurs. The active element 16 may be deteriorated. By providing the barrier layer 20 between the partition member 18 and the active element 16, deterioration of the active element 16 is suppressed, and deterioration of element performance is suppressed.
[0035]
As a material for forming the barrier layer 20, for example, in addition to a compound containing silicon such as ceramic, silicon nitride, silicon oxynitride, and silicon oxide, a material having a heat dissipation effect, for example, aluminum nitride, silicon carbide, silicon Nitride, boron nitride, boron phosphide, and the like can be used. Since the barrier layer 20 has a heat dissipation effect in addition to the metal barrier, the influence of the thermal contraction of the partition member 18 made of a low dielectric constant material can be reduced.
In addition, for example, one of rare earth elements (for example, at least one element of cerium, ytterbium, samarium, erbium, yttrium, lanthanum, gadolinium, dysprosium, and neodymium), and nitrogen, silicon, aluminum, and oxygen are included. Materials may be used.
Alternatively, a conductive layer such as titanium nitride or tantalum nitride may be formed. When the conductive barrier layer 20 is formed, the thickness and shape of the barrier layer are determined so that the effective wiring resistance does not increase.
The barrier layer made of such a material is formed using, for example, a CVD method, various coating methods, a sputtering method, a vapor deposition method, or the like. The barrier layer 20 may have a single layer structure or a multilayer structure.
[0036]
It is preferable that at least a part of the partition member 18 is covered with a protective film 21 that prevents passage of a substance such as liquid, gas, or metal. Since the partition member 18 formed of the low dielectric constant material easily intrudes, the low dielectric constant performance of the partition member 18 may be deteriorated due to the intrusion of the material in the manufacturing process or the like. Since at least a part of the partition member 18 is covered with the protective film 21, the low dielectric property of the partition member 18 is maintained, and the capacity of the wiring can be surely reduced. In general, the low dielectric constant material is mechanically fragile, but has the effect of being mechanically reinforced by the protective film 21. Furthermore, since the diffusion of the substance through the partition member 18 is suppressed, it is avoided that the substance that has passed through the partition member 18 affects other regions.
[0037]
Examples of the material for forming the protective film 21 include ceramic, silicon nitride, silicon oxynitride, and silicon oxide. Moreover, when forming a film | membrane in the corner | corner of the partition member 18, a highly flexible inorganic polymer, organic polymer, etc. other than inorganic spin-on-glass type | system | group, organic spin-on glass type | system | group, and PSG (phosphate glass) are used preferably.
Note that when the spin-on-glass film is formed, the above-described supercritical drying method may be used. Coverage and film quality can be further improved by using the supercritical drying method.
The protective film 21 made of such a material can be formed by using various coating methods such as each spin coating method, dip coating method, dispense coating method, and reflow method. The protective film 21 may have a single layer structure or a multilayer structure.
Further, the protective film 21 may be formed in place of the barrier layer 20 described above. That is, the barrier layer 20 may be omitted by covering the partition member 18 with the protective film 21 including the side facing the active element 16. In this case, the protective film 21 may be formed using the above-described material for forming the barrier layer 20.
[0038]
As described above, in the electro-optical device 10 according to the present invention, the partition member 18 is formed of a low dielectric constant material, thereby reducing the parasitic capacitance generated between the conductive portions and increasing the operation speed. In order to increase the operation speed, it is necessary to consider the reduction of the wiring resistance in addition to the parasitic capacitance, and it is necessary to design the entire wiring structure. Note that the wiring board 11 of the present invention includes a case where a low dielectric constant material is used for other parts than the partition member.
[0039]
Next, an embodiment in which the electro-optical device and the wiring board of the present invention are applied to an active matrix display device using an organic EL element will be described. In each of the drawings to be referred to, the scale may be different from the actual one in order to make the layers and members recognizable on the drawing.
[0040]
FIG. 2 is a diagram schematically showing a configuration of an organic EL display device according to an embodiment of the present invention. This organic EL display device 100 employs an active driving method using TFTs as active elements. is doing.
The display device 100 includes an active element portion 146 including a TFT as an active element, an organic EL element 140 as a functional film including a light emitting layer, a hole transport layer, an electron transport layer, and the like on a substrate 121, and a cathode 154. , And the sealing portion 147 and the like are sequentially stacked.
[0041]
As the substrate 121, a glass substrate is used in this example. In addition, various known base materials used for electro-optical devices and wiring boards, such as silicon substrates, quartz substrates, ceramic substrates, metal substrates, plastic substrates, and plastic film substrates, are applied.
On the base material 121, a plurality of pixel regions 102 as light emitting regions are arranged in a matrix, and when performing color display, for example, each color of red (Red), green (Green), and blue (Blue) is used. Corresponding pixel regions 102 are arranged in a predetermined arrangement.
In each pixel region 102, a pixel electrode 141 is disposed, and in the vicinity thereof, a signal line 132, a common power supply line 133, a scanning line 131, scanning lines for other pixel electrodes (not shown), and the like are disposed. The planar shape of the pixel region 102 may be other shapes such as a circle and an oval other than the rectangle shown in the figure. For example, when a charge transport layer such as a light emitting layer or an electron or hole transport layer constituting an organic EL element is formed using a liquid phase process such as an ink jet method, the above layer is uniformly formed above the pixel electrode. In order to achieve this, a shape such as a rounded circle or an oval is preferable.
[0042]
The sealing portion 147 prevents water and oxygen from entering and prevents the cathode 154 or the organic EL element 140 from being oxidized. The sealing portion 147 is a sealing resin applied to the substrate 121 and a seal bonded to the substrate 121. A stop substrate (sealing can) 148 and the like are included. As the material of the sealing resin, for example, a thermosetting resin or an ultraviolet curable resin is used, and in particular, an epoxy resin that is one kind of thermosetting resin is preferably used. The sealing substrate 148 is made of glass, metal, or the like, and the base material 121 and the sealing substrate 148 are bonded to each other with a sealant. A desiccant is disposed inside the base material 121, and there is N in the space formed between them. ₂ N filled with gas ₂ A gas filling layer 149 is formed.
[0043]
FIG. 3 shows a circuit structure of the display device 100.
In FIG. 3, on the substrate 121, a plurality of scanning lines 131, a plurality of signal lines 132 extending in a direction intersecting the scanning lines 131, and a plurality of common power supply lines 133 extending in parallel to the signal lines 132. Is wired. Further, the pixel region 102 is formed corresponding to each intersection of the scanning line 131 and the signal line 132.
For example, the data line driving circuit 103 including a shift register, a level shifter, a video line, and an analog switch is connected to the signal line 132. The scanning line 131 is connected to a scanning side driving circuit 104 including a shift register and a level shifter.
[0044]
In the pixel region 102, a first switching TFT 142 to which a scanning signal is supplied to the gate electrode via the scanning line 131, and a storage capacitor 145 for holding an image signal supplied from the signal line 132 via the TFT 142. And the second TFT 143 for driving in which the image signal held by the holding capacitor 145 is supplied to the gate electrode, and the common feeding line 133 is driven when electrically connected to the common feeding line 133 via the TFT 143. A pixel electrode 141 (anode) through which a current flows and an organic EL element 140 sandwiched between the pixel electrode 141 and the counter electrode 154 (cathode) are provided. The organic EL element 140 is a layer (functional film) containing an organic electroluminescence material as an electro-optic material, and the organic EL device includes a pixel electrode 141, a cathode 154, an organic EL element 140, and the like.
[0045]
In the pixel region 102, when the scanning line 131 is driven and the first TFT 142 is turned on, the potential of the signal line 132 at that time is held in the holding capacitor 145, and the second TFT 143 depends on the state of the holding capacitor 145. The conduction state of is determined. Further, a current amount corresponding to the conduction state of the current TFT is supplied from the common power supply line 133 to the organic EL element 140 via the pixel electrode 141. The light emission intensity of the organic EL element 140 is determined according to the amount of current supplied at this time.
[0046]
4A and 4B schematically show a cross-sectional structure of the pixel region 102 of the organic EL device, where FIG. 4A shows a so-called top emission type, and FIG. 4B shows a so-called back emission type. ing.
In FIG. 4A, the top emission type organic EL device has a configuration in which light emitted from the organic EL element 140 is extracted from the side opposite to the base 121 on which the TFT 143 is provided. Therefore, the substrate 121 may be transparent or opaque. Examples of the opaque base material include a thermosetting resin and a thermoplastic resin in addition to a ceramic sheet such as alumina and a metal sheet such as stainless steel subjected to an insulation treatment such as surface oxidation. Note that the pixel electrode 141 is preferably formed using a reflective film such as a metal film. 4A and 4B, in this example, the pixel electrode 141 is an anode and the counter electrode 154 is a cathode. However, the anode and the cathode may be replaced with each other.
[0047]
4B, the back emission type organic EL device has a configuration in which light emitted from the organic EL element 140 is extracted from the substrate 121 side on which the TFT 143 is provided. Therefore, a transparent or translucent material is used as the substrate 121. Examples of the transparent or anti-transparent substrate include a glass substrate, a quartz substrate, a resin substrate (plastic substrate, plastic film substrate) and the like, and an inexpensive soda glass substrate is preferably used. In addition, when using a soda-glass substrate, while applying a silica coat to this, the soda-glass weak to an acid alkali is protected and the flatness of a base material is improved. In addition, a color filter film, a color conversion film containing a luminescent substance, or a dielectric reflection film may be disposed on the substrate to control the wavelength of the extracted light.
[0048]
Reference numeral 281 denotes a partition member (bank) provided at the boundary of the pixel region 102. The partition member 281 has a role of preventing mixing of materials between adjacent organic EL elements 140 when the organic EL element 140 is formed. In this figure, the partition member 281 has a tapered structure in which the length of the top side is smaller than the length of the bottom side, but conversely, the structure in which the length of the top side is equal to or larger than the length of the bottom side. It may be.
Note that the back emission type organic EL device has a configuration in which the light emitted from the light emitting layer 286 is extracted from the substrate 121 side on which the TFT 143 is provided. It is preferable to avoid disposing the TFT 143 directly below and dispose the TFT 143 below the partition member 281.
[0049]
FIG. 5 shows an example of the planar structure of the partition member 281.
The partition member 281 is located at the boundary between the plurality of pixel regions 102 and has an opening corresponding to the arrangement of the plurality of pixel regions 102.
In FIG. 5A, the partition members 281 are provided in a lattice shape corresponding to the plurality of pixel regions 102 arranged in a matrix shape. In FIG. 5B, the partition member 281 is provided in a stripe shape corresponding to the plurality of pixel regions 102 arranged in a stripe shape. In this example, the partition member 281 has a lattice-like planar structure shown in FIG. Note that the arrangement of the pixel region 102 and the planar shape of the partition member 281 are not limited to this, and for example, a so-called delta arrangement of pixel regions that are shifted for each column and a shape corresponding thereto may be used. Further, the shape of the partition member 281 may be determined in accordance with the shape of the pixel electrode 154 shown in FIG. For example, in the case where the pixel electrode has a rounded or oval shape, the partition member 281 may have a shape with no corners accordingly.
[0050]
FIG. 6 shows an enlarged cross-sectional structure of a top emission type organic EL device.
6, the organic EL device includes a substrate 121, a pixel electrode 141 (anode) made of a transparent electrode material such as indium tin oxide (ITO), and a hole transport layer capable of transporting holes from the pixel electrode 141. 285, a light emitting layer 286 (organic EL layer) containing an organic EL material which is one of electro-optical materials, an electron transport layer 287 provided on the upper surface of the light emitting layer 286, and an upper surface of the electron transport layer 287. A cathode 154 (counter electrode) formed on the substrate 121 and TFTs 142 and 143 formed on the substrate 121. The cathode 154 is formed so as to cover the entire surface of the element, and plays a role of injecting electrons into the organic EL element 140 in a pair with the pixel electrode 141. The cathode 154 may have a single layer structure or a multilayer structure. Further, examples of the material for forming the cathode 154 include lithium fluoride in addition to aluminum (Al), magnesium (Mg), gold (Au), silver (Ag), and calcium (Ca). These materials may be used alone, or may be used as a laminated film or an alloy of these single materials.
[0051]
In this example, the TFTs 142 and 143 are both formed in an n-channel type. Note that the TFTs 142 and 143 are not limited to n-channel TFTs, and p-channel TFTs may be used for both or one of them.
[0052]
The TFTs 142 and 143 are made of, for example, SiO. ₂ Is provided on the surface of the base material 121 through the base protective film 201 mainly composed of the semiconductor film 204 and 205 made of silicon or the like and formed on the base protective film 201 and covers the semiconductor films 204 and 205. As described above, the gate insulating film 220 provided in the upper layer of the base protective film 201, the gate electrodes 229 and 230 provided in the portion facing the semiconductor films 204 and 205 on the upper surface of the gate insulating film 220, and the gate electrode 229 230, the first interlayer insulating film 250 provided on the gate insulating film 220 so as to cover the gate insulating film 220, and the semiconductor films 204, 205 through the contact holes opened over the gate insulating film 220 and the first interlayer insulating film 250. The source electrodes 262 and 263 to be connected are provided at positions facing the source electrodes 262 and 263 with the gate electrodes 229 and 230 interposed therebetween. The drain electrodes 265 and 266 connected to the semiconductor films 204 and 205 through the contact holes opened through the gate insulating film 220 and the first interlayer insulating film 250, the source electrodes 262 and 263, and the drain electrodes 265 and 266 are covered. And a second interlayer insulating film 270 provided on the upper layer of the first interlayer insulating film 250.
In the case of the top emission type, the second interlayer insulating film 270 is preferably a planarizing film. Thereby, irregular reflection of light can be suppressed.
[0053]
A pixel electrode 141 is disposed on the upper surface of the second interlayer insulating film 270, and the pixel electrode 141 and the drain electrode 266 are connected via a contact hole 275 provided in the second interlayer insulating film 270.
When the materials of the first interlayer insulating film 250 and the second interlayer insulating film 270 are different from each other, as shown in the drawing, the contact holes provided in the first interlayer insulating film 250 and the second interlayer insulating film 270 are provided. The contact hole 275 is preferably formed so as not to overlap.
[0054]
Of the semiconductor films 204 and 205, regions overlapping the gate electrodes 229 and 230 with the gate insulating film 220 interposed therebetween are channel regions 246 and 247, respectively. In addition, in the semiconductor films 204 and 205, source regions 233 and 236 are provided on the source side of the channel regions 246 and 247, and drain regions 234 and 235 are provided on the drain side of the channel regions 246 and 247. Among these, the source regions 233 and 236 are connected to the source electrodes 262 and 263 through contact holes that open through the gate insulating film 220 and the first interlayer insulating film 250. On the other hand, the drain regions 234 and 235 are connected to drain electrodes 265 and 266 that are formed in the same layer as the source electrodes 262 and 263 through contact holes that open through the gate insulating film 220 and the first interlayer insulating film 250. Yes. The pixel electrode 141 is electrically connected to the drain region 235 of the semiconductor film 205 through the drain electrode 266.
[0055]
As a third insulating layer formed of the low dielectric constant material such as silica airgel between the portion of the surface of the second interlayer insulating film 270 other than the portion where the organic EL device is provided and the cathode 154. A partition member 281 is provided. Since the partition member 281 is formed of a low dielectric constant material, the parasitic capacitance is suppressed low.
[0056]
A barrier layer 271 made of silicon nitride, silicon oxynitride, titanium nitride, tantalum nitride, or the like is provided between the partition member 281 and the second interlayer insulating film 270. The barrier layer 271 serves to prevent the metal (for example, alkali metal (movable ions)) that has passed through the partition member 281 from entering the TFTs 142 and 143.
[0057]
Further, the side surface and the upper surface of the partition member 281 are covered with a protective film 272 made of an inorganic polymer or an organic polymer. The protective film 272 prevents liquid or gas, or a substance such as a metal from entering the partition member 281. Further, the protective film 272 suppresses the diffusion of the substance through the partition member 281. Of the partition member 281, the area covered by the protective film 272 is not limited to that shown in the figure, and for example, the entire surface of the partition member 281 may be covered with the protective film 272.
[0058]
Next, referring to FIG. 7 to FIG. 11, an example in which the electro-optical device manufacturing method (including the wiring substrate manufacturing method) of the present invention is applied to a process for manufacturing a display device including the organic EL device described above. I will explain. Here, a process for manufacturing TFTs for N-type and P-type drive circuits simultaneously with the organic EL device including the TFTs 142 and 143 described above will be described.
[0059]
First, as shown in FIG. 7A, from a silicon oxide film having a thickness of about 200 to 500 nm by a plasma CVD method using TEOS (tetraethoxysilane), oxygen gas, or the like as a raw material with respect to the base material 121 as required. A base protective film 201 is formed. In addition to the silicon oxide film, a silicon nitride film or a silicon oxynitride film may be provided as the base protective film.
[0060]
Next, the temperature of the substrate 121 is set to about 350 ° C., and the semiconductor film 200 made of an amorphous silicon film having a thickness of about 30 to 70 nm is formed on the surface of the base protective film by using an ICVD method, a plasma CVD method, or the like. Form. The semiconductor film 200 is not limited to an amorphous silicon film, and may be a semiconductor film including an amorphous structure such as a microcrystalline semiconductor film. Alternatively, a compound semiconductor film including an amorphous structure such as an amorphous silicon germanium film may be used.
Subsequently, a crystallization process such as a laser annealing method or a rapid heating method (such as a lamp annealing method or a thermal annealing method) is performed on the semiconductor film 200 to crystallize the semiconductor film 200 into a polysilicon film. In the laser annealing method, for example, a line beam having a beam length of 400 mm is used with an excimer laser, and the output intensity thereof is, for example, 200 mJ / cm. ² And Note that the second harmonic or the third harmonic of the YAG laser may be used. As for the line beam, it is preferable to scan the line beam so that a portion corresponding to 90% of the peak value of the laser intensity in the short dimension direction overlaps each region.
[0061]
Next, as shown in FIG. 7B, unnecessary portions of the semiconductor film (polysilicon film) 200 are removed by patterning using a photolithography method or the like, and corresponding to each formation region of the TFT, Island-shaped semiconductor films 202, 203, 204, and 205 are formed.
Subsequently, a gate insulating film 220 made of a silicon oxide film or a nitride film (silicon oxynitride film or the like) having a thickness of about 60 to 150 nm is formed so as to cover the semiconductor film 200 by plasma CVD using TEOS or oxygen gas as a raw material. To do. The gate insulating film 220 may have a single layer structure or a stacked structure. In addition, you may use other methods, such as not only a plasma CVD method but a thermal oxidation method. In addition, when the gate insulating film 220 is formed using a thermal oxidation method, the semiconductor film 200 is also crystallized, and these semiconductor films can be formed into a polysilicon film.
[0062]
Next, as shown in FIG. 7C, a gate electrode forming conductive film containing doped silicon, a silicide film, or a metal such as aluminum, tantalum, molybdenum, titanium, or tungsten on the entire surface of the gate insulating film 220. 221 is formed. The thickness of the conductive film 221 is, for example, about 200 nm.
Subsequently, a patterning mask 222 is formed on the surface of the gate electrode forming conductive film 221, and patterning is performed in this state, and as shown in FIG. 7D, a P-type driver circuit transistor is formed. Then, a gate electrode 223 is formed. At this time, since the gate electrode forming conductive film 221 is covered with the patterning mask 222 on the side of the N-type pixel electrode transistor and the N-type driver circuit transistor, the gate electrode forming conductive film 221 is patterned. It will never be done. In addition, the gate electrode may be formed using a single-layer conductive film or a stacked structure.
[0063]
Next, as shown in FIG. 7E, the gate electrode 223 of the P-type driving circuit transistor, the region where the N-type pixel electrode transistor is formed, and the N-type driving circuit transistor are formed. Using the gate electrode forming conductive film 221 left in the region as a mask, a p-type impurity element (boron in this example) is ion-implanted. For example, the dose is about 1 × 1015 cm ^-2 It is. As a result, the impurity concentration is, for example, 1 × 1020 cm. ^-3 High-concentration source / drain regions 224 and 225 are formed in a self-aligned manner with respect to the gate electrode 223. Here, a portion which is covered with the gate electrode 223 and no impurity is introduced becomes a channel region 226.
[0064]
Next, as shown in FIG. 8A, the P-type driving circuit transistor side is completely covered, and the N-type pixel electrode TFT 10 and the N-type driving circuit transistor side gate electrode formation are formed. A patterning mask 227 made of a resist mask or the like covering the region is formed.
[0065]
Next, as shown in FIG. 8B, the gate electrode forming conductive film 221 is patterned using the patterning mask 227 to form gate electrodes of the N-type pixel electrode transistor and the N-type driver circuit transistor. 228, 229, 230 are formed.
Subsequently, an n-type impurity element (phosphorus in this example) is ion-implanted while the patterning mask 227 remains. For example, the dose is 1 × 1015 cm ^-2 It is. As a result, impurities are introduced in a self-aligned manner with respect to the patterning mask 227, and high concentration source / drain regions 231, 232, 233, 234, 235, 236 are formed in the semiconductor films 203, 204, 205. . Here, in the semiconductor films 203, 204, and 205, a region where high concentration phosphorus is not introduced is wider than a region covered with the gate electrodes 228, 229, and 230. That is, in the semiconductor films 203, 204, and 205, high concentration between the high concentration source / drain regions 231, 232, 233, 234, 235, and 236 is on both sides of the region facing the gate electrodes 228, 229, and 230. A region where low phosphorus is not introduced (low concentration source / drain regions described later) is formed.
[0066]
Next, the patterning mask 227 is removed, and an n-type impurity element (phosphorus in this example) is ion-implanted in this state. For example, the dose is 1 × 1013 cm ^-2 It is. As a result, as shown in FIG. 8C, low concentration impurities are introduced into the semiconductor films 203, 204, and 205 in a self-aligned manner with respect to the gate electrodes 228, 229, and 230. 237, 238, 239, 240, 241, 242 are formed. Note that impurities are not introduced into regions overlapping with the gate electrodes 228, 229, and 230, and channel regions 245, 246, and 247 are formed.
[0067]
Next, as shown in FIG. 8D, a first interlayer insulating film 250 is formed on the surface side of the gate electrodes 228, 229, 230, and is patterned by a photolithography method or the like to form predetermined source electrode positions and drain electrodes. A contact hole is formed at the position. As the first interlayer insulating film 250, for example, an insulating film containing silicon such as a silicon oxynitride film or a silicon oxide film may be used. Further, it may be a single layer or a laminated film. Further, heat treatment is performed in an atmosphere containing hydrogen to terminate the dangling bonds of the semiconductor film with hydrogen (hydrogenation). Note that hydrogenation may be performed using hydrogen excited by plasma.
Subsequently, a conductive film 251 to be a source electrode and a drain electrode is formed from above using a metal film such as an aluminum film, a chromium film, or a tantalum film. The thickness of the conductive film 251 is, for example, about 200 nm to 300 nm. The conductive film may be a single layer or a laminated film.
Subsequently, a patterning mask 252 is formed at the positions of the source electrode and the drain electrode, and patterning is performed, so that the source electrodes 260, 261, 262, and 263 and the drain electrodes 264, 265, and 266 shown in FIG. Are formed at the same time.
[0068]
Next, as shown in FIG. 9A, a second interlayer insulating film 270 made of silicon nitride or the like is formed. The thickness of the second interlayer insulating film 270 is, for example, about 1 to 2 μm. As a material for forming the second interlayer insulating film 270, a material capable of transmitting light, such as a silicon oxide film or an organic resin, is used. As the organic resin, acrylic, polyimide, polyamide, BCB (benzocyclobutene), or the like can be used.
[0069]
Next, as shown in FIG. 9B, the second interlayer insulating film 270 is removed by etching, and a contact hole 275 reaching the drain electrode 266 is formed.
[0070]
Next, as shown in FIG. 9C, SnO, for example, doped with ITO or fluorine so as to be embedded in the contact hole 275 as well. ₂ Further, a film made of a transparent electrode material such as ZnO or polyaniline is formed, and the pixel electrode 141 electrically connected to the source / drain regions 235 and 236 is formed. Note that the pixel electrode 141 serves as an anode of the EL element.
[0071]
Next, as shown in FIG. 10A, a barrier layer 271 is formed. The position where the barrier layer 271 is formed is a position where the partition member 281 is formed later, and is a position adjacent to the pixel electrode 141 on the second interlayer insulating film 270. As a material of the barrier layer 271, for example, silicon nitride, silicon oxynitride, titanium nitride, tantalum nitride, or the like can be used. The formation method of the barrier layer 271 is appropriately selected depending on the material, and for example, a CVD method, a coating method, a sputtering method, a vapor deposition method, or the like is used. The barrier layer 271 is formed, for example, by forming a material film on the entire surface of the second interlayer insulating film 270 and the pixel electrode 141 and then patterning the material film by a photolithography method or the like. The opening of the barrier layer 271 is provided corresponding to the formation position of the pixel electrode 141. Note that part of the barrier layer 271 may be formed so as to overlap with the peripheral edge of the pixel electrode 141.
[0072]
Next, as shown in FIG. 9B, a partition member 281 is formed on the barrier layer 271 using a low dielectric constant material such as silica aerogel or porous silica. For example, when silica aerogel is used, as described above, a process for producing a wet gel by a sol-gel method, a process for aging a wet gel, and a supercritical drying that obtains an airgel by drying the wet gel by a supercritical drying method Through the process, a layer of silica airgel is formed on the base material 121, and then patterned by etching, ashing or the like to obtain a partition member 281 having a predetermined shape. Note that patterning is preferably performed so that the bottom surface of the partition member 281 falls within the barrier layer 271.
[0073]
Next, as shown in FIG. 10C, a protective film 272 is formed using a material such as an inorganic polymer or an organic polymer. At this time, the protective film 272 is formed so as to cover the upper surface and side surfaces of the partition member 281 with the protective film 272. The protective film 272 may be formed by partially applying only the partition member 281, or may be formed by forming a film on the entire surface of the element and then patterning it by a photolithography method or the like. The protective film 272 mechanically reinforces the partition member 281 and prevents a substance from entering the partition member 281 in the subsequent steps. If the bottom surface of the partition member 281 is formed to be narrower than the barrier layer 271, all the wall surfaces of the partition member 281 are covered with the protective film 272 and the barrier layer 271, and the intrusion of the substance into the partition member 281 and the partitioning are performed. Diffusion of the substance through the member 281 is effectively prevented. Further, when a liquid material such as a material for forming a hole transport layer described below is disposed at the opening position of the partition member 281, a material having liquid repellency or lyophilicity to the liquid material is protected. It may be used for the film 272. Alternatively, a desired affinity may be imparted to the liquid material by surface treatment such as plasma treatment. By controlling the affinity of the protective film for the liquid material, the liquid material can be easily arranged, and the flatness of the film formed by the material can be improved.
[0074]
Next, as shown in FIG. 11A, a hole transport layer 285 is formed so as to cover the pixel electrode 141. In the step of forming the hole transport layer 285, the forming material is discharged onto the pixel electrode 141 by using, for example, an ink jet apparatus as droplet discharge. After that, drying treatment and heat treatment are performed, and the hole transport layer 285 is formed over the pixel electrode 141. In the formation of the layer using the inkjet method, for example, the discharge nozzle H1 formed in the inkjet head is disposed to face the pixel electrode 141, and the material is discharged from the nozzle H1. A partition member 281 is formed around the pixel electrode 141, and a material whose liquid amount per droplet is controlled is discharged onto the pixel electrode 141 from the nozzle H 1 while the nozzle H 1 and the base material 121 are relatively moved. To do.
Examples of the ink jet type discharge technique include a charge control method, a pressure vibration method, an electromechanical conversion method, an electrothermal conversion method, and an electrostatic suction method. In the charge control method, a charge is applied to a material by a charging electrode, and the flight direction of the material is controlled by a deflection electrode and discharged from a nozzle. Moreover, the pressure vibration system is 30 kg / cm for the material. ² When a control voltage is not applied, the material moves straight and is ejected from the nozzle. When a control voltage is applied, the material is electrostatically discharged between the materials. Repulsion occurs and the material is scattered and not discharged from the nozzle. The electromechanical conversion method utilizes the property that a piezoelectric element (piezoelectric element) is deformed by receiving a pulse-like electric signal. The piezoelectric element is deformed through a flexible substance in a space where material is stored. Pressure is applied, and the material is extruded from this space and discharged from the nozzle. In the electrothermal conversion method, a material is rapidly vaporized by a heater provided in a space in which the material is stored to generate bubbles, and the material in the space is discharged by the pressure of the bubbles. In the electrostatic attraction method, a minute pressure is applied in a space in which the material is stored, a meniscus of the material is formed on the nozzle, and an electrostatic attractive force is applied in this state before the material is drawn out. In addition to this, techniques such as a system that uses a change in the viscosity of a fluid due to an electric field and a system that uses a discharge spark are also applicable.
Note that in the case where a hole transport layer 285, a light emitting layer 286, and an electron transport layer 287, which will be described later, are formed by droplet discharge, lyophilic treatment of the surface of the pixel electrode 141, surface of the partition member 281 (protection) The liquid repellency treatment on the surface of the film 272 is preferably performed in advance.
Further, it is preferable that the subsequent processes including the hole transport layer forming process have an atmosphere free of water and oxygen. For example, it is preferably performed in an inert gas atmosphere such as a nitrogen atmosphere or an argon atmosphere.
[0075]
The material for forming the hole transport layer 285 is not particularly limited, and known materials can be used, and examples thereof include pyrazoline derivatives, arylamine derivatives, stilbene derivatives, and triphenyldiamine derivatives. Specifically, JP-A-63-70257, JP-A-63-175860, JP-A-2-135359, JP-A-2-135361, JP-A-2-209998, JP-A-3-37992, and JP-A-3-152184. Examples described in the publication are exemplified, but a triphenyldiamine derivative is preferable, and 4,4′-bis (N (3-methylphenyl) -N-phenylamino) biphenyl is particularly preferable.
[0076]
Further, a hole injection layer may be formed instead of the hole transport layer, and both the hole injection layer and the hole transport layer may be formed. In this case, as a material for forming the hole injection layer, for example, copper phthalocyanine (CuPc), polytetravinylthiophene polyphenylene vinylene, 1,1-bis- (4-N, N-ditolylaminophenyl) cyclohexane , Tris (8-hydroxyquinolinol) aluminum and the like, and copper phthalocyanine (CuPc) is particularly preferable. When both the hole injection layer and the hole transport layer are formed, for example, the hole injection layer is formed on the pixel electrode side prior to the formation of the hole transport layer, and the hole transport layer is formed thereon. Is preferred. By forming the hole injection layer together with the hole transport layer in this manner, it is possible to control the increase in driving voltage and to increase the driving life (half life).
[0077]
Next, as illustrated in FIG. 11B, a light emitting layer 286 is formed on the hole transport layer 285. In the formation process of the light emitting layer 286, as with the hole transport layer 285, the forming material is discharged onto the pixel electrode 141 by using, for example, an ink jet apparatus as droplet discharge. Thereafter, a drying process and a heat treatment are performed to form a light emitting layer 286 over the pixel electrode 141. In the case of color correspondence, the light emitting layers 286 corresponding to the respective colors of blue (B), red (R), and green (G) are formed in a predetermined arrangement.
[0078]
The material for forming the light emitting layer 286 is not particularly limited, and low molecular organic light emitting dyes and polymer light emitting materials, that is, light emitting materials composed of various fluorescent materials and phosphorescent materials can be used. Among conjugated polymers that serve as luminescent materials, those containing an arylene vinylene structure are particularly preferred. In the low-molecular phosphor, for example, naphthalene derivatives, anthracene derivatives, perylene derivatives, polymethine series, xanthene series, coumarin series, cyanine series pigments, 8-hydroquinoline and its metal complexes, aromatic amines, tetraphenylcyclo Pentadiene derivatives and the like, or known ones described in JP-A-57-51781 and 59-194393 can be used.
[0079]
Next, as illustrated in FIG. 11C, an electron transport layer 287 is formed on the light emitting layer 286. In the formation process of the electron transport layer 287, as with the hole transport layer 285 and the light emitting layer 286, the formation material is discharged onto the pixel electrode 141 by using, for example, an ink jet apparatus as droplet discharge. Thereafter, drying treatment and heat treatment are performed to form the electron transport layer 287 over the pixel electrode 141.
[0080]
The material for forming the electron transport layer 287 is not particularly limited, and is an oxadiazole derivative, anthraquinodimethane and its derivative, benzoquinone and its derivative, naphthoquinone and its derivative, anthraquinone and its derivative, tetracyanoanthraquinodi. Examples include methane and its derivatives, fluorenone derivatives, diphenyldicyanoethylene and its derivatives, diphenoquinone derivatives, metal complexes of 8-hydroxyquinoline and its derivatives, and the like. Specifically, as with the material for forming the hole transport layer, JP-A-63-70257, JP-A-63-175860, JP-A-2-135359, JP-A-2-135361, and JP-A-2-209888 are disclosed. And the like described in JP-A-3-379992 and 3-152184, particularly 2- (4-biphenylyl) -5- (4-t-butylphenyl) -1,3,4. -Oxadiazole, benzoquinone, anthraquinone, tris (8-quinolinol) aluminum are preferred.
[0081]
Note that the formation material of the hole transport layer 285 and the formation material of the electron transport layer 287 may be mixed with the formation material of the light-emitting layer 286 and used as the light-emitting layer formation material. In that case, although the amount of the hole transport layer forming material or electron transport layer forming material used varies depending on the type of compound used, etc., it should be considered within an amount range that does not impair sufficient film formability and light emission characteristics. To be determined as appropriate. Usually, it is 1 to 40 weight% with respect to the light emitting layer forming material, More preferably, it is 2 to 30 weight%.
[0082]
Next, as shown in FIG. 11D, the cathode 154 (counter electrode) is formed on the entire surface of the substrate 121 or in a stripe shape. The cathode 154 may have a single layer structure of a single material such as Al, Mg, Li, or Ca, or may have a laminated structure. Alternatively, a single layer structure of an alloy material such as Mg: Ag (10: 1 alloy) may be used, or a laminated structure including a layer made of an alloy material may be used. Specifically, Li ₂ O (about 0.5 nm) / Al or LiF (about 0.5 nm) / Al, MgF ₂ A laminated film such as / Al. For example, it is preferable to form a material with a small work function on the side close to the light emitting layer, for example, Ca, Ba, etc. can be used, and depending on the material, it is better to form a thin layer of LiF, etc. There is also. In addition, a material having a work function higher than that of the lower side, for example, Al can be used on the upper side (sealing side).
These cathodes 154 are preferably formed by, for example, a vapor deposition method, a sputtering method, a CVD method, or the like, and in particular, the vapor deposition method is preferable because damage to the light emitting layer 286 due to heat can be prevented.
[0083]
In addition, an Al film, an Ag film, or the like formed by vapor deposition, sputtering, CVD, or the like is preferably used on the cathode 154. The thickness is preferably in the range of, for example, 100 to 1000 nm, particularly about 200 to 500 nm. Further, on the cathode 154, SiO is added to prevent oxidation. ₂ A protective layer such as SiN may be provided.
[0084]
Through the above process, an organic EL device and TFTs for N-type and P-type drive circuits are completed.
Thereafter, the base material 121 on which the organic EL device is formed and the sealing substrate 148 (see FIG. 6) are sealed with a sealing resin. The sealing step is preferably performed in an inert gas atmosphere such as nitrogen, argon, or helium. It is not preferable to perform in the air because when there is a defect such as a pinhole in the cathode 154, water or oxygen may enter the cathode 154 from the defective portion and the cathode 154 may be oxidized.
Further, the cathode 154 is connected to the wiring of the substrate 121, and the wiring of the circuit element unit 146 (see FIG. 6) is connected to a driving IC (driving circuit) provided on or outside the substrate 121. The display device 100 of the form is obtained.
[0085]
FIG. 12 shows another example of the organic EL device.
Unlike the example described above, the organic EL device shown in FIG. 12 has a sealing layer that blocks intrusion of gas and metal ions (the first sealing layer 300, the second sealing layer 301, and the third sealing layer 302). At least one of them).
[0086]
The first sealing layer 300 is formed between the first interlayer insulating film 250 and the second interlayer insulating film 270 so as to cover the source electrodes 262 and 263 and the drain electrodes 265 and 266, and has a film thickness of, for example, 50 to 500 nm. As a material constituting the first sealing layer 300, for example, a material such as ceramic, silicon nitride, silicon oxynitride, or silicon oxide is used. The first sealing layer 300 prevents the entry of alkali metal (sodium) from moisture, the light emitting layer 286 (EL layer), or the like to the TFTs 142 and 143.
[0087]
Further, as a material constituting the first sealing layer 300, a material having a heat dissipation effect in addition to the alkali metal sealing effect may be used. As such a material, for example, at least one element of B (boron), C (carbon), and N (nitrogen) and at least one of Al (aluminum), Si (silicon), and P (phosphorus) are used. An insulating film containing an element can be given. For example, aluminum nitride, silicon carbide, silicon nitride, boron nitride, boron phosphide, or the like can be used. Further, an insulating film containing Si, Al, N, O, and M (where M is at least one rare earth element, preferably Ce (cerium), Yb (ytterbium), Sm (samarium), Er (erbium), Y ( Yttrium), La (lanthanum), Gd (gadolinium), Dy (dysprosium), or Nd (neodymium)) can also be used.
[0088]
The second sealing layer 301 is formed between the second interlayer insulating film 270 and the pixel electrode 141, and has a film thickness of 50 to 500 nm, for example. As a material constituting the second sealing layer 301, for example, a material such as ceramic, silicon nitride, silicon oxynitride, or silicon oxide is used. The second sealing layer 301 prevents moisture and the entry of alkali metal (sodium) from the light emitting layer 286 (EL layer) or the like to the TFTs 142 and 143. As a material constituting the second sealing layer 301, the material used for the first sealing layer described above can be used. Further, in addition to the alkali metal sealing effect, a heat dissipation effect may be provided.
Further, the barrier layer 271 described above may be omitted by forming the second sealing layer 301.
[0089]
The third sealing layer 302 is formed so as to cover the cathode 154 and has a film thickness of, for example, 50 to 500 nm. As a material constituting the third sealing layer 302, for example, a material such as ceramic, silicon nitride, silicon oxynitride, or silicon oxide is used. The third sealing layer 302 prevents moisture from entering from the outside. Further, as the material constituting the third sealing layer 302, the material used for the first sealing layer described above can be used. Further, in addition to the alkali metal sealing effect, a heat dissipation effect may be provided. Further, the organic EL device of FIG. 18 is a top emission type, and the third sealing layer 302 is preferably formed of a material and a thickness that can transmit light well.
[0090]
Further, instead of or in addition to such a sealing layer, a low refractive index layer for improving light extraction efficiency may be formed. The low refractive index layer is a layer having a light transmission refractive index lower than that of the substrate 121 and is made of, for example, the above-described silica airgel. Here, the refractive index of glass, which is the material of the substrate 121, is 1.54, and the refractive index of quartz is 1.45. In addition, as a low refractive index layer, porous SiO ₂ Other materials such as membranes and polymers may be used. Further, a desiccant or a chemical adsorbent may be dispersed in the material constituting the low refractive index layer. Thereby, the sealing effect can be provided to the low refractive index layer.
[0091]
FIG. 13 shows another example of the organic EL device.
In each example described above, the switching TFT 142 is shown as a so-called single gate structure, but the present invention is not limited to this. That is, as shown in FIG. 13, a double gate structure in which two gate electrodes 310 and 311 are electrically connected by a gate line (not shown), or a so-called multi-gate structure such as a triple gate structure (connected in series). And a structure including a semiconductor film having two or more channel regions. The multi-gate structure is advantageous in reducing the off-current value and is advantageous in increasing the screen size.
[0092]
FIGS. 14A and 14B show another example of the circuit of the organic EL display device. The circuits shown in FIGS. 14A and 14B are so-called current programming type circuits that control the energization of the EL element by controlling the current. Note that FIG. 14A employs a so-called current mirror circuit. By adopting such a circuit, the EL element can be kept in a constant conductive state and the EL layer can emit light stably. Further, it is advantageous in constructing a large-screen display device.
[0093]
When a polymer light-emitting material is used as the material for forming the light-emitting layer, a polymer having a light-emitting group in the side chain can be used, but preferably includes a conjugated structure in the main chain, and in particular, polythiophene, poly -P-phenylene, polyarylene vinylene, polyfluorene and derivatives thereof are preferred. Of these, polyarylene vinylene and its derivatives are preferred. The polyarylene vinylene and derivatives thereof are preferably polymers containing 50 mol% or more of the repeating units represented by the following chemical formula (1) based on the total repeating units. Although it depends on the structure of the repeating unit, it is more preferable that the repeating unit represented by the chemical formula (1) is 70% or more of the entire repeating unit.
-Ar-CR = CR'- (1)
[Wherein Ar represents an arylene group or heterocyclic compound group, and R and R ′ each independently represent a group selected from the group consisting of hydrogen, an organic group having 1 to 20 carbon atoms, a perfluoroalkyl group, and a cyano group. . ]
[0094]
The polymer light-emitting material includes an aromatic compound group or a derivative thereof, a heterocyclic compound group or a derivative thereof, and a group obtained by combining them as a repeating unit other than the repeating unit represented by the chemical formula (1). May be. In addition, the repeating unit represented by the chemical formula (1) and other repeating units may be linked with, for example, a non-conjugated unit having an ether group, an ester group, an amide group, an imide group, or the like. Those non-conjugated parts may be contained.
[0095]
Examples of polyarylene vinylenes include PPV (poly (para-phenylene vinylene)) and MO-PPV (poly (2,5-dimethoxy-1,4-phenylene vinylene)) as shown in the formula (2). CN-PPV (poly (2,5-bishexyloxy-1,4-phenylene- (1-cyanovinylene))), MEH-PPV (poly [2-methoxy-5- (2′-ethylhexyloxy)]- PPV derivatives such as para-phenylene vinylene).
[0096]
[Chemical 1]

[0097]
In addition to the materials shown above, for example, poly (paraphenylene), polyalkylfluorene, and the like can be mentioned. Polyalkylfluorene as shown in chemical formula (3) (specifically, polyalkylene as shown in chemical formula (4)). Alkyl fluorene copolymers) are particularly preferred.
[0098]
[Chemical 2]

[0099]
[Chemical 3]

[0100]
The polymer light-emitting material may be a random, block or graft copolymer, or may be a polymer having an intermediate structure thereof, for example, a random copolymer having a block property. . From the viewpoint of obtaining a polymer light emitting material having a high quantum yield of light emission, a random copolymer having a block property and a block or graft copolymer are preferable to a complete random copolymer. Moreover, since the organic EL element formed here utilizes light emission from a thin film, a polymer light emitting material having a good light emission quantum yield in a solid state is used.
[0101]
Among the above materials, a material that is liquid at the temperature at which the light emitting layer is formed or a material that exhibits good solubility in a desired solvent is used for forming a light emitting layer using a liquid material such as an inkjet method. be able to. As the solvent, for example, chloroform, methylene chloride, dichloroethane, tetrahydrofuran, toluene, xylene and the like are preferably used. Although depending on the structure and molecular weight of the polymer light-emitting material, it can usually be dissolved in these solvents in an amount of 0.1 wt% or more.
[0102]
The polymer light emitting material has a molecular weight of 10 in terms of polystyrene. ^Three -10 ⁷ It may be preferable that the molecular weight is 10 ^Three The following oligomers can also be used.
[0103]
By employing a synthesis method according to the desired polymer light emitting material, the desired polymer light emitting material can be obtained. For example, a Wittig reaction from a diphosphonium salt obtained from a dialdehyde compound in which two aldehyde groups are bonded to an arylene group, a compound in which two halogenated methyl groups are bonded to an arylene group, and triphenylphosphine is exemplified. As another synthesis method, a dehydrohalogenation method from a compound in which two halogenated methyl groups are bonded to an arylene group is exemplified. Further, a sulfonium salt decomposition method for obtaining the polymer light emitting material by heat treatment from an intermediate obtained by polymerizing a sulfonium salt of a compound in which two halogenated methyl groups are bonded to an arylene group with an alkali is exemplified.
[0104]
More specifically, a method for synthesizing an arylene vinylene copolymer, which is one example of the polymer light emitting material, will be described. For example, when a polymer light-emitting material is obtained by Wittig reaction, for example, first, a bis (halogenated methyl) compound, more specifically, for example, 2,5-dioctyloxy-p-xylylene dibromide is converted to N, N. -A phosphonium salt is synthesized by reacting with triphenylphosphine in a dimethylformamide solvent, and this is condensed with a dialdehyde compound, more specifically, for example, terephthalaldehyde using, for example, lithium ethoxide in ethyl alcohol. By the Wittig reaction, a polymer light emitting material containing a phenylene vinylene group and a 2,5-dioctyloxy-p-phenylene vinylene group is obtained. At this time, in order to obtain a copolymer, two or more kinds of diphosphonium salts and / or two or more kinds of dialdehyde compounds may be reacted.
[0105]
[Formula 4]

[0106]
When these polymer light-emitting materials are used as a material for forming a light-emitting layer, the purity affects the light-emitting properties. Therefore, it is desirable to carry out a purification treatment such as reprecipitation purification, fractionation by chromatography, etc. after synthesis. .
[0107]
In the case of a material having low solubility of the polymer material, for example, there is a material in which a light emitting layer can be obtained by applying a corresponding precursor and then heat-curing as shown in chemical formula (5). For example, when polyphenylene-vinylene is a polymer light-emitting material constituting the light-emitting layer, the sulfonium salt of the corresponding precursor is disposed at the site to be the light-emitting layer, and then the heat treatment is performed, whereby the sulfonium group is eliminated, and the light-emitting layer Can be obtained.
[0108]
As the low molecular weight material capable of forming the light emitting layer, any substance that emits light in the visible range can be basically used. Among them, a material having an aromatic substituent is preferable. For example, an aluminum quinolinol complex (Alq _Three ), Distyrylbiphenyl, and BeBq represented by chemical formula (6) ₂ And Zn (OXZ) ₂ In addition to those generally used conventionally, such as pyrazoline dimer, quinolidinecarboxylic acid, benzopyrylium perchlorate, benzopyranoquinolidine, rubrene, phenanthroline europium complex and the like.
[0109]
Color display is possible by appropriately selecting materials that emit blue, green, and red light from the high-molecular materials and low-molecular materials typified above and arranging them at predetermined positions. When arranging at a predetermined position, a mask vapor deposition method, a printing method, an ink jet method, or the like can be used.
[0110]
[Chemical formula 5]

[0111]
The light emitting layer may be a so-called host / guest type light emitting layer in which a host is dispersed in a guest functioning as a medium.
In the host / guest type light emitting layer, the light emitting color of the light emitting layer is basically determined by the guest material, and therefore the guest material can be selected according to the desired light emitting color. In general, a material that efficiently emits fluorescence is used. As the host material, basically, a material having an energy level higher than an excited state level related to light emission of the guest material is suitable as the host material. In some cases, a material having high carrier mobility may be required. In this case, the material can be selected from the above-described polymer light emitters.
Examples of guest materials that exhibit blue light emission include coronenes and distyrylbiphenyls, and examples of guest materials that exhibit green light emission include quinacridones and rubrenes, and guests that exhibit red light emission. Examples of the material include fluorescent dyes, and guest materials that emit red light include, for example, rhodamines.
The host material can be appropriately selected according to the guest material. To give a few examples, a host material and a guest material are each Zn (OXZ). ₂ In addition, a light emitting layer exhibiting blue light emission can be obtained by forming a light emitting layer made of coronene.
A phosphorescent material can also be used as the guest material. For example, Ir (ppy) shown in chemical formula (7) _Three , Pt (thpy) ₂ , PtOEP and the like are preferably used.
[0112]
[Chemical 6]

[0113]
Note that when the phosphor represented by the chemical formula (7) is used as a guest material, examples of the host material include CBP, DCTA, TCPB, or Alq shown in the chemical formula (8). _Three Etc. are preferably used.
The host / guest type light emitting layer is formed by a co-evaporation method or a method of applying a liquefied host material and a guest material or a precursor thereof.
[0114]
[Chemical 7]

[0115]
In the above-described example, the hole transport layer is formed as the lower layer of the light emitting layer, and the electron transport layer is formed as the upper layer. However, the present invention is not limited to this, for example, the hole transport layer and the electron transport layer. May be formed, or a hole injection layer may be formed instead of the hole transport layer, and only the light emitting layer may be formed alone. Good.
[0116]
Furthermore, in addition to the hole injection layer, the hole transport layer, the light emitting layer, and the electron transport layer, a hole blocking layer may be formed, for example, on the counter electrode side of the light emitting layer to extend the life of the light emitting layer. As a material for forming such a hole blocking layer, for example, BCP represented by the chemical formula (9) and BAlq represented by the chemical formula (10) are used, but BAlq is preferable in terms of extending the life.
[0117]
[Chemical 8]

[0118]
[Chemical 9]

[0119]
It is obvious that the electro-optical device created as described above can be driven by either an active method or a passive method.
[0120]
15 to 20 show an embodiment of the electronic apparatus of the present invention.
The electronic apparatus of this example includes the electro-optical device of the present invention such as the organic EL display device described above as a display unit.
FIG. 15 shows an example of a display device that displays television images and characters and images sent to a computer. In FIG. 15, reference numeral 1000 denotes a display device body using the electro-optical device of the present invention. In addition, the display apparatus main body 1000 can respond also to a large screen by using the organic EL display apparatus mentioned above.
FIG. 16 shows an example of a vehicle-mounted navigation device. In FIG. 16, reference numeral 1010 denotes a navigation apparatus body, and reference numeral 1011 denotes a display unit (display means) using the electro-optical device of the present invention.
FIG. 17 shows an example of a portable image recording apparatus (video camera). In FIG. 17, reference numeral 1020 indicates a recording apparatus main body, and reference numeral 1021 indicates a display unit using the electro-optical device of the present invention.
FIG. 18 illustrates an example of a mobile phone. In FIG. 18, reference numeral 1030 indicates a mobile phone body, and reference numeral 1031 indicates a display unit (display means) using the electro-optical device of the present invention.
FIG. 19 shows an example of an information processing apparatus such as a word processor or a personal computer. In FIG. 19, reference numeral 1040 denotes an information processing apparatus, reference numeral 1041 denotes an information processing apparatus body, reference numeral 1042 denotes an input unit such as a keyboard, and reference numeral 1043 denotes a display unit using the electro-optical device of the present invention.
FIG. 20 shows an example of a wristwatch type electronic device. In FIG. 20, reference numeral 1050 denotes a watch body, and reference numeral 1051 denotes a display unit using the electro-optical device of the present invention.
Since the electronic apparatus shown in FIGS. 15 to 20 includes the electro-optical device of the present invention as a display unit, display with excellent durability and quality can be realized.
[0121]
As mentioned above, although the suitable Example concerning this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the spirit of the present invention.
[0122]
【The invention's effect】
According to the substrate and the manufacturing method thereof of the present invention, a substrate with stable performance can be realized, for example, the parasitic capacitance generated by the conductive portion can be reduced.
[0123]
In addition, according to the electronic device and the manufacturing method thereof of the present invention, the performance of the functional film can be satisfactorily exhibited and it is suitable for speeding up the operation, so that the screen can be enlarged and operates stably over a long period of time. An optical device can be realized.
[0124]
Further, according to the electronic apparatus of the present invention, since the electronic device of the present invention is provided as a display unit, a stable display operation with good followability can be performed.
[Brief description of the drawings]
FIG. 1 is a diagram conceptually showing a cross-sectional structure of an electro-optical device and a substrate of the present invention.
FIG. 2 is a diagram schematically showing a configuration of an organic EL display device according to an embodiment of the present invention.
FIG. 3 is a circuit diagram illustrating an example of a circuit of an active matrix organic EL display device.
4A and 4B schematically show a cross-sectional structure of a pixel region (organic EL device), where FIG. 4A shows a top emission type and FIG. 4B shows a back emission type.
FIG. 5 shows an example of a planar structure of a partition member.
FIG. 6 is an enlarged view showing a cross-sectional structure of a top emission type pixel region (organic EL device).
FIG. 7 is a diagram for explaining an example in which the method for manufacturing an electro-optical device according to the invention is applied to a process for manufacturing a display device including an organic EL element.
FIG. 8 is a diagram for explaining an example in which the method for manufacturing an electro-optical device according to the invention is applied to a process for manufacturing a display device including an organic EL element.
FIG. 9 is a diagram for explaining an example in which the method for manufacturing an electro-optical device according to the invention is applied to a process for manufacturing a display device including an organic EL element.
FIG. 10 is a diagram for explaining an example in which the method for manufacturing an electro-optical device according to the invention is applied to a process for manufacturing a display device including an organic EL element.
FIG. 11 is a diagram for explaining an example in which the method for manufacturing an electro-optical device according to the invention is applied to a process for manufacturing a display device including an organic EL element.
FIG. 12 is a diagram showing another example of an organic EL device.
FIG. 13 is a diagram showing another example of an organic EL device.
FIG. 14 is a diagram showing another example of the circuit of the organic EL display device.
FIG. 15 is a diagram showing an example of an electronic apparatus according to the invention.
FIG. 16 is a diagram showing another embodiment of the electronic apparatus of the invention.
FIG. 17 is a diagram showing another embodiment of the electronic apparatus of the invention.
FIG. 18 is a diagram showing another embodiment of the electronic apparatus of the invention.
FIG. 19 is a diagram showing another embodiment of the electronic apparatus of the invention.
FIG. 20 is a diagram showing another embodiment of the electronic apparatus of the invention.
[Explanation of symbols]
10, 100 ... Organic EL display device (electro-optical device)
11 ... Wiring board
151, 121 ... Base material
16, 142, 143 ... TFT (active element)
17, 102 ... Light emitting area
18, 281 ... partition member
20, 271 ... barrier layer
21,272 ... Protective film
140 ... Organic EL element (functional film)

Claims (20)

An electronic device comprising a plurality of functional films provided between a counter electrode and a plurality of pixel electrodes each disposed in one pixel area of the plurality of pixel areas, wherein each of the plurality of functional films is A plurality of active elements used for manufacturing an electronic device including an electro-optic material, each controlling one functional film of the plurality of functional films via one pixel electrode of the plurality of pixel electrodes A wiring board including:
A substrate,
A plurality of semiconductor films provided above the substrate and each included in the plurality of active elements;
A gate insulating film provided to cover the plurality of semiconductor films and included in the plurality of active elements;
A first interlayer insulating film;
A second interlayer insulating film formed above the first interlayer insulating film;
A plurality of conductive films each connected to one of the plurality of semiconductor films via a first contact hole formed in the first interlayer insulating film;
A partition member provided with a plurality of openings corresponding to the arrangement of the plurality of pixel regions;
A protective film covering an upper surface and a side surface of the partition member;
The plurality of pixel electrodes arranged corresponding to the plurality of openings;
At least one element of boron, carbon, and nitrogen and at least one element of aluminum, silicon, and phosphorus disposed between the second interlayer insulating film and the plurality of pixel electrodes; A sealing layer which is an insulating film containing,
A barrier layer disposed between the second interlayer insulating film and the partition member ,
The barrier layer covers the bottom surface of the partition member,
Each of the plurality of pixel electrodes is connected to one conductive film of the plurality of conductive films through a second contact hole formed in the second interlayer insulating film,
The relative permittivity of the partition member is 4 or less,
A wiring board characterized by. An electronic device comprising a plurality of functional films provided between a counter electrode and a plurality of pixel electrodes each disposed in one pixel area of the plurality of pixel areas, wherein each of the plurality of functional films is A plurality of active elements used for manufacturing an electronic device including an electro-optic material, each controlling one functional film of the plurality of functional films via one pixel electrode of the plurality of pixel electrodes A wiring board including:
A substrate,
A plurality of semiconductor films provided above the substrate and each included in the plurality of active elements;
A gate insulating film provided to cover the plurality of semiconductor films and included in the plurality of active elements;
A first interlayer insulating film;
A second interlayer insulating film formed above the first interlayer insulating film;
A plurality of conductive films each connected to one of the plurality of semiconductor films via a first contact hole formed in the first interlayer insulating film;
A partition member provided with a plurality of openings corresponding to the arrangement of the plurality of pixel regions;
A protective film covering an upper surface and a side surface of the partition member;
The plurality of pixel electrodes arranged corresponding to the plurality of openings;
A sealing layer, which is an insulating film including at least one of silicon, aluminum, nitrogen, oxygen, and a rare earth element, disposed between the second interlayer insulating film and the plurality of pixel electrodes;
A barrier layer disposed between the second interlayer insulating film and the partition member ,
The barrier layer covers the bottom surface of the partition member,
Each of the plurality of pixel electrodes is connected to one conductive film of the plurality of conductive films through a second contact hole formed in the second interlayer insulating film,
The relative permittivity of the partition member is 4 or less,
A wiring board characterized by. An electronic device comprising a plurality of functional films provided between a counter electrode and a plurality of pixel electrodes each disposed in one pixel area of the plurality of pixel areas, wherein each of the plurality of functional films is A plurality of active elements used for manufacturing an electronic device including an electro-optic material, each controlling one functional film of the plurality of functional films via one pixel electrode of the plurality of pixel electrodes A wiring board including:
A substrate,
A plurality of semiconductor films provided above the substrate and each included in the plurality of active elements;
A gate insulating film provided to cover the plurality of semiconductor films and included in the plurality of active elements;
A first interlayer insulating film;
A second interlayer insulating film formed above the first interlayer insulating film;
A plurality of conductive films each connected to one of the plurality of semiconductor films via a first contact hole formed in the first interlayer insulating film;
A partition member provided with a plurality of openings corresponding to the arrangement of the plurality of pixel regions;
A protective film covering an upper surface and a side surface of the partition member;
The plurality of pixel electrodes arranged corresponding to the plurality of openings;
A sealing layer made of any one of ceramic, silicon nitride, and silicon oxynitride, disposed between the second interlayer insulating film and the plurality of pixel electrodes;
A barrier layer disposed between the second interlayer insulating film and the partition member ,
The barrier layer covers the bottom surface of the partition member,
Each of the plurality of pixel electrodes is connected to one conductive film of the plurality of conductive films through a second contact hole formed in the second interlayer insulating film,
The relative permittivity of the partition member is 4 or less,
A wiring board characterized by. An electronic device comprising a plurality of functional films provided between a counter electrode and a plurality of pixel electrodes each disposed in one pixel area of the plurality of pixel areas, wherein each of the plurality of functional films is A plurality of active elements used for manufacturing an electronic device including an electro-optic material, each controlling one functional film of the plurality of functional films via one pixel electrode of the plurality of pixel electrodes A wiring board including:
A substrate,
A plurality of semiconductor films provided above the substrate and each included in the plurality of active elements;
A gate insulating film provided to cover the plurality of semiconductor films and included in the plurality of active elements;
A first interlayer insulating film;
A second interlayer insulating film formed above the first interlayer insulating film;
A plurality of conductive films each connected to one of the plurality of semiconductor films via a first contact hole formed in the first interlayer insulating film;
A partition member provided with a plurality of openings corresponding to the arrangement of the plurality of pixel regions;
A protective film covering an upper surface and a side surface of the partition member;
The plurality of pixel electrodes arranged corresponding to the plurality of openings;
A sealing layer made of silicon oxide and disposed between the second interlayer insulating film and the plurality of pixel electrodes;
A barrier layer disposed between the second interlayer insulating film and the partition member ,
The barrier layer covers the bottom surface of the partition member,
Each of the plurality of pixel electrodes is connected to one conductive film of the plurality of conductive films through a second contact hole formed in the second interlayer insulating film,
The relative permittivity of the partition member is 4 or less,
A wiring board characterized by. The wiring board according to any one of claims 1 to 4,
The material of the first interlayer insulating film is different from the material of the second interlayer insulating film;
A wiring board characterized by. The wiring board according to any one of claims 1 to 5,
The first contact hole and the second contact hole are formed so as not to overlap each other;
A wiring board characterized by. The wiring board according to any one of claims 1 to 6,
The plurality of conductive films are formed on the first interlayer insulating film;
A wiring board characterized by. The wiring board according to any one of claims 1 to 7,
The sealing layer suppresses permeation of gas or metal ions;
A wiring board characterized by. The wiring board according to any one of claims 1 to 8,
The relative permittivity of the partition member is lower than the relative permittivity of the substrate;
A wiring board characterized by. The wiring board according to claim 1,
The relative permittivity of the partition member is 3 or less,
A wiring board characterized by. The wiring board according to any one of claims 1 to 10,
The relative permittivity of the partition member is 2.5 or less;
A wiring board characterized by. The wiring board according to any one of claims 1 to 11,
The sealing layer has a thickness of 50 nm to 500 nm.
A wiring board characterized by. The wiring board according to any one of claims 1 to 12,
The sealing layer has a heat dissipation effect;
A wiring board characterized by. The wiring board according to any one of claims 1 to 13,
The partition member is made of silica glass, an alkylsiloxane polymer, an alkyl silsesquioxane polymer, a hydrogenated alkyl silsesquioxane polymer, or a polyaryl ether, a spin-on-glass film, a diamond film, and a fluorinated amorphous carbon film. Including at least one of
A wiring board characterized by. The wiring board according to any one of claims 1 to 13,
The partition member is made of a porous material;
A wiring board characterized by. The wiring board according to any one of claims 1 to 13,
The partition member includes at least one of aerogel, porous silica, gel in which fine particles of magnesium fluoride are dispersed, a fluorine-based polymer, a porous polymer, and a material containing fine particles in a predetermined material,
A wiring board characterized by. The wiring board according to any one of claims 1 to 16,
That the surface of the protective film is liquid-repellent;
A wiring board characterized by. The wiring board according to claim 1,
Maintaining the relative dielectric constant of the partition member by suppressing the permeation of a substance by the protective film,
A wiring board characterized by. A wiring board according to any one of claims 1 to 18,
The plurality of functional films;
The counter electrode,
Each of the plurality of functional films is disposed corresponding to one pixel electrode of the plurality of pixel electrodes;
An electronic device characterized by the above.   An electronic device comprising the electronic device according to claim 19.

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