JP2006294395A - Organic el device, manufacturing method of organic el device, and electronic equipment using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic EL device capable of enhancing contrast in a simple structure, a manufacturing method of the organic EL device and electronic equipment using the same. <P>SOLUTION: The organic EL device is provided with a barrier rib parts 112 formed on a substrate 2 and zoning each pixel area, a light absorption layer 20 with conductivity formed on each of first electrodes 111 inside the barrier ribs, a light absorption layer 20 with conductivity formed on a top face of each barrier rib part 112, and a light-emitting layer 110b formed above the light absorption layer 20 inside the pixel area. The light absorption layer 20 formed on the first electrode 111 and the light absorption layer 20 formed on the top face of the barrier rib part 112 have an identical structure and a second electrode 12 and the light absorption layer 20 formed on the top face of the barrier rib part 112 are electrically connected with each other. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an organic EL device, a method for manufacturing the organic EL device, and an electronic apparatus using the same.

2. Description of the Related Art Conventionally, organic electroluminescence (hereinafter abbreviated as “organic EL”) display devices have been developed as display means for portable devices such as mobile phones and PDAs, and personal computers.
An organic EL display device includes a plurality of light-emitting elements each having an EL layer (light-emitting layer) sandwiched between a pair of electrodes in a substrate surface, and each light-emitting element is independently driven and controlled to display a desired display. Is going. This organic EL display device can be classified into, for example, a bottom emission type in which light is extracted from the element substrate side and a top emission type in which light is extracted from the sealing member side, depending on the difference in the light extraction direction from the light emitting layer. For the reasons such as freedom of material selection, the bottom emission type structure has been mainly studied so far.

  On the other hand, in the field of display devices, there are high needs for enlargement, high definition, and high brightness, and research and development aimed at increasing the size of organic EL display devices are also actively conducted. However, when the above-described bottom emission type organic EL display device is increased in size, it is necessary to increase the wiring for supplying signals to the electrodes, which causes a problem that the aperture ratio of the pixel is lowered. In addition, when the aperture ratio decreases in this way, a problem arises that the product life is shortened as a result of flowing a large current through the light emitting layer in order to secure the luminance of the pixel. For this reason, in recent years, a top emission type structure in which the aperture ratio of a pixel is not affected by the structure of a wiring or the like has attracted attention and has been actively studied.

By the way, when an organic EL device is used for a display or the like, there is a problem that the contrast is lowered by the incidence of external light. In order to solve this problem, an organic EL element has been proposed in which the back electrode is composed of an absorptive electrode layer and a conductive auxiliary electrode layer, and the absorptive electrode layer (light absorption layer) is disposed on the organic light emitting layer side. (For example, Patent Document 1).
In addition, a display device in which a light absorption layer is provided over an insulating film for separating light emitting portions of light emitting elements has been proposed (for example, Patent Document 2). In this display device, external light that enters from between the light emitting portions and is reflected by the first electrode and other wiring material portions under the insulating film is absorbed by the light absorption layer.
JP-A-8-8065 JP 2003-17272 A

  However, in the organic EL element described in Patent Document 1, the absorptive electrode layer must be formed so as to be in contact with one surface of the light emitting layer and also be in contact with the cathode formed on the substrate. Further, in the display device described in Patent Document 2, after the light absorption layer is formed on the insulating film, an opening is formed in the light absorption layer and the insulating film, and the light emitting layer is not formed in the opening. Must not. Therefore, in both cases of Patent Document 1 and Patent Document 2, since there are many steps, it is difficult to form the light absorption layer, and the manufacturing cost is increased.

  The present invention has been made to solve the above problems, and provides an organic EL device capable of improving contrast with a simple configuration, a method for manufacturing the organic EL device, and an electronic apparatus using the organic EL device. The purpose is to do.

In order to achieve the above object, the present invention provides the following means.
The organic EL device of the present invention includes a plurality of pixel regions arranged on a substrate, a first electrode provided for each pixel region inside the pixel region, and the first electrode provided above the first electrode. An organic EL device including a second electrode provided in common over a plurality of pixel regions, and emitting light from a light emitting layer disposed above the first electrode to a side opposite to the substrate, A partition wall formed on the substrate and partitioning each of the pixel regions, a conductive light absorption layer formed on the first electrode inside the pixel region, and an upper surface of the partition wall. A light-absorbing layer having conductivity and a light-emitting layer formed above the light-absorbing layer inside the pixel region, the light-absorbing layer formed on the first electrode, and an upper surface of the partition wall portion. The formed light absorption layer has the same configuration, and the second electrode and the spacer. The light-absorbing layer formed on the part the upper surface, characterized in that it is electrically connected.

  In the organic EL device according to the present invention, the light absorption layer is provided inside the pixel region and on the upper surface of the partition wall, so that external light incident on the light emitting layer is absorbed by these light absorption layers. Therefore, when light generated in the light emitting layer is extracted, reflection of external light inside the light emitting layer and between pixel regions can be suppressed, so that contrast can be improved. Here, since the light absorption layer has conductivity, even if it is provided on the first electrode, it does not affect current injection into the light emitting layer, and light absorption formed on the upper surface of the partition wall portion. When the layer has conductivity, it is possible to increase the conductivity of the second electrode and reduce the resistance. Furthermore, since the light absorption layer formed inside the pixel region and the light absorption layer formed on the upper surface of the partition wall have the same configuration, they can be formed at the same time, and an apparatus with a simple manufacturing process can be provided. It becomes.

In the organic EL device of the present invention, the light absorption layer is formed by laminating the first metal layer, the transparent conductive layer, and the second metal layer in this order from the substrate side to the second electrode side. It is preferable that
In the organic EL device according to the present invention, the external light incident on the light emitting layer is partly reflected by the second metal layer, and partly passes through the transparent conductive layer and is reflected by the first metal layer. . And the light reflected in the 1st metal layer and the light reflected in the 2nd metal layer interfere and are absorbed. Therefore, it is possible to absorb light by stacking with a certain thin film thickness, and each layer can be formed with high accuracy, so that reflection of outside light inside the light emitting layer and between pixel areas can be reliably suppressed, and contrast can be improved. It becomes.

In the organic EL device of the present invention, the light absorption layer may be formed of a single layer of conductive material having light absorption.
In the organic EL device according to the present invention, since the light absorption layer is made of a single layer of conductive material having light absorptivity, it is possible to suppress external light reflection inside the light emitting layer and between pixel regions with a simple configuration. Cost reduction can be achieved.

In the organic EL device of the present invention, it is preferable that the partition wall has a portion having a larger cross-sectional area on the distal end side than on the proximal end side close to the substrate.
In the organic EL device according to the present invention, the partition wall portion has a portion having a larger cross-sectional area on the distal end side than the proximal end side close to the substrate. Therefore, for example, by a vapor deposition method, a light absorption layer is formed inside the pixel region and on the upper surface of the partition wall portion. When forming the light absorption layer, the light absorption layer is not formed in the shadowed portion. Therefore, the light absorption layer inside the pixel region and the partition wall upper surface is accurately separated by the partition wall. Therefore, it is possible to reliably suppress external light reflection inside the light emitting layer and between pixel regions.

  In the organic EL device of the present invention, the partition wall is provided with a contact hole, the light absorption layer formed on the top surface of the partition wall, and the second electrode extraction wiring formed below the partition wall Are preferably electrically connected through the contact hole.

  In the organic EL device according to the present invention, since the light absorption layer has conductivity, the light absorption layer formed on the upper surface of the partition wall can function as an auxiliary electrode. Therefore, a sufficient current can be supplied from the second electrode lead-out wiring to the auxiliary electrode through the contact hole, so that luminance unevenness can be reduced.

  In the organic EL device of the present invention, it is preferable that the edge of the light emitting layer has a height substantially equal to the height of the upper surface of the partition wall.

  In the organic EL device according to the present invention, the height of the edge of the light emitting layer is substantially the same as the height of the upper surface of the partition wall, so that the second electrode is stacked over the light emitting layer and the partition wall. It is possible to prevent the second electrode from being broken in the partition wall and reduce pixel defects.

  In addition, the organic EL device of the present invention includes a plurality of pixel regions arranged on a substrate, a first electrode provided for each pixel region in the pixel region, and an upper portion of the first electrode. And an organic EL device that emits light from a light emitting layer disposed above the first electrode to the opposite side of the substrate. A partition wall formed on the substrate and partitioning each of the pixel regions; a light-absorbing layer that has conductivity and is formed inside the pixel region; and functions as the first electrode; and A conductive light absorption layer formed on the upper surface; and a light emitting layer formed above the light absorption layer inside the pixel region; a light absorption layer formed inside the pixel electrode; and It has the same structure as the light absorption layer formed on the upper surface. Characterized in that it is electrically connected to the light-absorbing layer formed on the partition wall upper surface and the second electrode.

  In the organic EL device according to the present invention, the light absorption layer formed inside the pixel region functions as the first electrode. Therefore, when the light generated in the light emitting layer is extracted, external light inside the light emitting layer or between the pixel regions Since reflection can be suppressed, contrast can be improved. In addition, since a layer having an action as the first electrode can be formed at a time while suppressing reflection of external light, an apparatus with a simple manufacturing process can be provided.

  The method of manufacturing the organic EL device of the present invention includes a step of forming the partition wall on the substrate and a deposition method of depositing a conductive light-absorbing material on the substrate on which the partition wall is formed, Forming a light absorption layer made of the conductive light absorption material at the same time inside the pixel region and on the upper surface of the partition wall.

  In the method for manufacturing the organic EL device according to the present invention, after the partition wall is formed on the substrate, the conductive light-absorbing material is evaporated toward the substrate on which the partition wall is formed by a vapor deposition method. At this time, the light absorption layer formed in the pixel region and the light absorption layer formed on the upper surface of the partition wall are separated by the partition wall. Accordingly, a light absorbing layer having the same structure can be simultaneously formed in the pixel region and on the upper surface of the partition wall by a simple method, and light excellent in uniformity and density can be formed in the pixel region and on the upper surface of the partition wall. An absorption layer can be formed.

  In the method for manufacturing an organic EL device of the present invention, it is preferable that the charge injection layer and the light emitting layer are formed on a light absorption layer formed inside the pixel region by a droplet discharge method.

  In the method for manufacturing an organic EL device according to the present invention, the charge injection layer and the light emitting layer are formed by a droplet discharge method. This droplet discharge method is a printing technique well known for so-called inkjet printers, which discharge and fix a droplet of material ink obtained by liquefying various materials from an inkjet head onto a substrate. . According to the droplet discharge method, since the droplets of the material ink can be accurately discharged to a fine region, the material ink can be directly fixed to the desired region without performing photolithography. Accordingly, no material is wasted, so that the manufacturing cost can be reduced and the charge injection layer and the light emitting layer can be formed uniformly and accurately.

An electronic apparatus according to the present invention is characterized by using the organic EL device as a display unit.
In the electronic apparatus according to the present invention, as described above, since the organic EL device with improved contrast is used as the display unit, a display with good contrast can be obtained.

  Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. 1 to 8, the scale of each layer and each member is shown to be different from the actual scale so that each layer and each member has a size that can be recognized on the drawings.

FIG. 1 is a schematic plan view showing a wiring structure of an organic EL display device which is an example of the organic EL device of the present embodiment.
As shown in FIG. 1, the organic EL display device 1 of the present embodiment includes a plurality of scanning lines 101, a plurality of signal lines 102 extending in a direction intersecting the scanning lines 101, and the signal lines 102 in parallel. A plurality of power supply lines 103 extending are respectively wired. An area partitioned by the scanning line 101 and the signal line 102 is configured as a pixel area.

  Connected to the signal line 102 is a data side driving circuit 104 including a shift register, a level shifter, a video line, and an analog switch. Further, a scanning side driving circuit 105 including a shift register and a level shifter is connected to the scanning line 101.

  In each pixel region, a switching thin film transistor 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101 and a pixel signal shared from the signal line 102 via the switching thin film transistor 112 are held. A capacitor cap, a driving thin film transistor 123 to which a pixel signal held by the holding capacitor cap is supplied to a gate electrode, and the power supply line when electrically connected to the power supply line 103 via the driving thin film transistor 123 A pixel electrode (first electrode) 111 into which a driving current flows from 103 and a functional layer 110 sandwiched between the pixel electrode 111 and the cathode (second electrode) 12 are provided. The pixel electrode 111, the counter electrode 12, and the functional layer 110 constitute a light emitting unit A, and the organic EL display device 1 includes a plurality of the light emitting units A in a matrix.

  According to the configuration of the organic EL display device 1, when the scanning line 101 is driven and the thin film transistor 112 for switching is turned on, the potential of the signal line 102 at that time is held in the holding capacitor cap, and the state of the holding capacitor cap Accordingly, the on / off state of the driving thin film transistor 123 is determined. Then, a current flows from the power supply line 103 to the pixel electrode 111 through the channel of the driving thin film transistor 123, and further a current flows to the cathode 12 through the functional layer 110. The functional layer 110 emits light according to the amount of current flowing through it.

FIG. 2 is a schematic plan view of the display device, and FIG. 3 is a schematic cross-sectional view of FIG. 2 taken along the line II ′.
As shown in FIG. 3, in the display device 1 of this embodiment, the circuit element unit 14 and the display element unit 10 are sequentially stacked on the substrate 2, and the substrate surface on which the stacked body is formed is sealed by the sealing unit 3. It has a stopped structure. The display element unit 10 includes a light emitting element unit 11 including a light emitting layer 110 b and a cathode 12 formed on the light emitting element unit 11. The cathode 12 and the sealing portion 3 have translucency, and the display device 1 is a so-called top emission type display device in which display light emitted from the light emitting layer is emitted from the sealing portion 3 side. It is configured.

As the substrate 2, either a transparent substrate (or a translucent substrate) or an opaque substrate can be used. Examples of the transparent or translucent substrate include glass, quartz, resin (plastic, plastic film) and the like, and an inexpensive soda glass substrate is particularly preferably used. Examples of the opaque substrate include a thermosetting resin, a thermoplastic resin, and the like in addition to a ceramic sheet such as alumina or a metal sheet such as stainless steel subjected to an insulation treatment such as surface oxidation. As shown in FIG. 2, the substrate 2 is partitioned into a display region 2 a located at the center and a non-display region 2 b surrounding the display region 2 a located at the periphery of the substrate 2.
The display area 2a is an area formed by the light emitting portions A arranged in a matrix, and a non-display area 2b is formed outside the display area. In the non-display area 2b, a dummy display area 2d adjacent to the display area 2a is formed.

As shown in FIG. 3, the circuit element unit 14 includes the above-described scanning line, signal line, storage capacitor, switching thin film transistor, driving thin film transistor 123, and the like, and is arranged in the display region 2a. The light emitting unit A is driven.
One end of the cathode 12 is connected to the cathode wiring 120 formed on the substrate 2 from the light emitting element portion 11, and one end of the wiring is connected to the wiring 5 a on the flexible substrate 5. The wiring 5a is connected to a driving IC 6 (driving circuit) provided on the flexible substrate 5 (see FIG. 2).

Further, the above-described power supply lines 103 (103R, 103G, 103B) are wired in the non-display area 2b of the circuit element unit 14.
Further, the above-described scanning side drive circuits 105 and 105 are arranged on both sides of the display area 2a in FIG. The scanning side drive circuits 105 and 105 are provided in the circuit element portion 14 below the dummy region 2d. Further, in the circuit element section 14, a drive circuit control signal line 105a and a drive circuit power supply line 105b connected to the scanning side drive circuits 105 and 105 are provided.
Further, an inspection circuit 106 is arranged above the display area 2a in FIG. The inspection circuit 106 can inspect the quality and defects of the display device during manufacturing or at the time of shipment.

  The sealing unit 3 includes a substrate 2 and a sealing substrate (sealing member) 604 via a sealing resin 603. The gas permeability of the sealing resin 603 is preferably as small as possible.

  FIG. 4 shows an enlarged view of the cross-sectional structure of the display area 2a in the present display device. The display device 1 includes a circuit element portion 14 in which a circuit such as a TFT is formed on a substrate 2, a light emitting element portion 11 in which a functional layer 110 including a pixel electrode 111 and a light emitting layer 110b is formed, a cathode 12 are sequentially laminated.

In the circuit element portion 14, a thin film transistor 123 is configured by the semiconductor film 141, the gate insulating film 142, and the gate electrode 143.
The circuit element unit 14 is also formed with the storage capacitor cap and the switching thin film transistor 142 described above, but these are not shown in FIG.

  The light emitting element portion 11 is mainly configured by a functional layer 110 formed on the light absorption layer 20 formed inside the pixel region and a bank layer 112 formed on the substrate 2 and partitioning each pixel region. ing. A cathode 12 is disposed on the functional layer 110, and the pixel electrode 111, the functional layer 110, and the cathode 12 constitute a light emitting unit A.

  Further, the light absorption layer 20 is formed on the pixel electrode 111 inside the pixel region and on the bank layer 112 (partition wall) upper surface 112a described later. The light absorption layer 20 has conductivity and is formed by patterning on the pixel electrode surface 111a of the pixel electrode 111 inside the pixel region and the upper surface 112a of the bank layer 112. The light absorption layer 20 on the pixel electrode 111 inside the pixel region and the light absorption layer 20 formed on the upper surface 112a of the bank layer 112 have the same configuration. Here, the same configuration means that the light absorption layer 20 on the pixel electrode surface 111a of the pixel electrode 111 inside the pixel region and the light absorption layer 20 on the upper surface 112a of the bank layer 112 each have a three-layer structure. This means that the layer thickness and material are all equal. The cathode 12 and the light absorption layer 20 formed on the upper surface 112 a of the bank layer 112 are electrically connected.

  Specifically, as shown in FIG. 5, the light absorption layer 20 is laminated in the order of the first metal layer 21, the transparent conductive layer 22, and the second metal layer 23 from the substrate 2 side to the cathode 12 side. Yes. The first and second metal layers 21 and 23 are made of Ti, the thickness of the first metal layer 21 is about 200 nm, and the thickness of the second metal layer 23 is about 8 nm. The transparent conductive layer 22 is formed of a transparent conductive material, specifically, ITO is preferably used, and the thickness is about 50 nm.

The bank layer 112 includes an inorganic bank layer 113 formed on the substrate 2 and an organic bank layer 114 formed adjacent to the inorganic bank layer 113.
Inorganic bank layer 113 is, for _example, an inorganic insulating material SiO 2, TiO _2, etc., as shown in FIG. 5, which is patterned to have an opening 113a corresponding to the pixel electrode 111. A region determined by the shape of the opening 113a is a light emitting region, that is, a light emitting pixel. In addition, an opening 114 a corresponding to the pixel electrode 111 is formed in the organic bank layer 114.

  Further, in each region partitioned by the organic bank layer 114, the electrode surface 111a of the pixel electrode 111 is lyophilic by plasma processing using oxygen as a processing gas, and exhibits lyophilicity. On the other hand, the surface 20a of the light absorption layer 20 formed on the wall surface of the opening 114a and the upper surface 112a of the bank layer 112 is fluorinated (liquid repellent) by plasma treatment using tetrafluoromethane as a processing gas. And exhibits liquid repellency.

As shown in FIG. 5, the organic bank layer 114 of the bank layer 112 has a shape having a larger cross-sectional area on the distal end 114 c side than on the proximal end 114 b side near the substrate 2. That is, in the present embodiment, the width of the organic bank 114 in the planar direction in which the pixel regions are arranged has a shape that gradually increases from the base end 114b toward the tip end 114c.
In the opening 113a of the inorganic bank 113, the light absorption layer 20 is formed on the pixel electrode surface 111a up to a plane including the end 114d of the organic bank 114. That is, as shown in FIG. 2, the light absorption layer 20 has a shape that is not formed on the surface 113 b of the inorganic bank 113 that is shaded by the organic bank 114 when the organic EL display device 1 is viewed in plan. Yes.

The functional layer 110 includes a hole injection / transport layer (charge injection layer) 110a stacked on the light absorption layer 20 formed on the pixel electrode surface 111a of the pixel electrode 111, and a hole injection / transport layer 110a. The light emitting layer 110b is formed adjacent to the light emitting layer 110b, and the electron injection layer (charge injection layer) 110c is formed adjacent to the light emitting layer 110b.
The hole injection / transport layer 110a has a function of injecting holes into the light emitting layer 110b and a function of transporting holes inside the hole injection / transport layer 110a. As the hole injection / transport layer forming material, for example, a mixture of a polythiophene derivative such as polyethylenedioxythiophene and polystyrenesulfonic acid can be used. In addition, low molecular hole injection / transport materials such as TPD, α-NPD, m-MTDATA, and copper phthalocyanine can be formed only in the pixel region by vapor deposition using a physical mask. The electron injection layer 110c has a function of injecting electrons into the light emitting layer 110b and a function of transporting electrons inside the electron injection layer 110c. As the electron injection layer 110c, for example, lithium quinolinol (Liq), lithium fluoride (LiF), bathophencesium, Alq3, or the like can be preferably used. A metal having a work function of 4 eV or less, such as Mg, Ca, Ba, Sr, Li, Na, Rb, Cs, Yb, Sm, or the like can also be used.

By providing such a hole injection / transport layer 110a and an electron injection layer 110c between the pixel electrode 111 and the light emitting layer 110b and between the cathode 12 and the light emitting layer 110b, respectively, the light emission efficiency of the light emitting layer 110b. And device characteristics such as lifetime are improved. The hole injecting / transporting material may be different for each color of the light emitting layer 110b, or the hole injecting / transporting layer 110a may not be provided for the light emitting layer 110b of a specific color. Is possible.
Note that the electron-injecting layer 110c may not be formed depending on the material of the light-emitting layer 110b.

  The light emitting layer 110b has three types, a red light emitting layer 110b1 that emits red (R), a green light emitting layer 110b2 that emits green (G), and a blue light emitting layer 110b3 that emits blue (B). The light emitting layers 110b1 to 110b3 are regularly arranged. As this arrangement, a stripe arrangement, a delta arrangement, or the like can be applied. Examples of the material for the light emitting layer 110b include (poly) paraphenylene vinylene derivatives, polyphenylene derivatives, polyfluorene derivatives, polyvinyl carbazole, polythiophene derivatives, perylene dyes, coumarin dyes, rhodamine dyes, or polymer materials thereof. In addition, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, quinacridone, rubrene and the like can be used. In addition, as a low molecular material, Alq3, DPVBi, or the like is doped with the low molecular material as described above and mask-deposited, whereby desired light emission can be obtained in a predetermined arrangement.

For the cathode 12, a light-transmitting conductive material made of a metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO) is used. Is formed. Then, it plays a role of flowing a current through the functional layer 110 in a pair with the pixel electrode 111.
An anti-oxidation protective layer made of SiO, SiO ₂ , SiN or the like may be provided on the cathode 12 as necessary.

Next, a manufacturing method of the organic EL display device 1 of the present embodiment having the above configuration will be described.
The manufacturing method of the display device 1 of the present embodiment includes, for example, (1) a bank part forming step, (2) a light absorption layer forming step (3) a plasma processing step (4) a hole injection / transport layer forming step (first Including a droplet discharging step), (5) a light emitting layer forming step (including a second droplet discharging step), (6) an electron injection layer forming step, (7) a cathode forming step, and (8) a sealing step. It is comprised. In addition, a manufacturing method is not restricted to this, When other processes are removed as needed, it may be added.

(1) Bank Layer Forming Step The bank layer forming step is a step of forming the bank layer 112 at a predetermined position on the substrate 2. The formation method will be described below.
First, as shown in FIG. 6, an element having a circuit element portion 14 such as a scanning line, a signal line, and a thin film transistor 123 on a substrate 2 and a plurality of pixel electrodes 111 formed on interlayer insulating films 144a and 144b. Prepare the board.
Then, as shown in FIG. 7, an inorganic insulating film made of silicon oxide or the like is formed on the substrate 2, and processing such as development and exposure is performed by a photolithography technique. Thereby, the inorganic bank layer 113 having the opening 113a is formed. Next, a photosensitive material having heat resistance and solvent resistance such as acrylic resin and polyimide resin is applied on the inorganic bank layer 113, and the opening 114a is formed in the region where the pixel electrode 111 is disposed by photolithography. The organic bank layer 114 is formed. The height of the bank layer 112 is preferably about 0.1 to 0.2 μm. The reason for this range is as follows.

  That is, the height of the edge of the light emitting layer 110b is made to substantially coincide with the height of the bank layer 112. With this configuration, when the cathode 12 is stacked over the upper surfaces of the electron injection layer 110c and the bank layer 112, the cathode 12 in the bank layer 112 is prevented from being broken and pixel defects can be reduced.

(2) Light Absorbing Layer Forming Step The light absorbing layer forming step is a step of forming the light absorbing layer 20 inside the pixel region and on the upper surface 112a of the bank layer 112. The formation method will be described below.
First, as shown in FIG. 7, a conductive light-absorbing material is vapor-deposited on the substrate 2 on which the bank layer 112 is formed by vapor deposition. In the conductive light absorbing material 112, the first metal layer 21 made of Ti is deposited by 200 nm on the pixel electrode surface 111 a of the pixel electrode 111 and on the upper surface 112 a of the bank layer 112. On the first metal layer 21, ITO, which is the transparent conductive layer 22, is deposited by 50 nm, and then on the ITO, a second metal layer 23 made of Ti is deposited by 8 nm, and Ti, ITO, Ti in this order 3 A layered structure is obtained. Furthermore, in order to improve the hole injection property to the hole injection layer formed thereon, when a transparent conductive material having a large work function, for example, ITO, is formed on the second metal layer by several nm to 10 nm. good.
As described above, the light absorption layer 20 is simultaneously formed in the pixel region and on the upper surface 112 a of the bank layer 112. The light absorption layer 20 inside the pixel region has a shape that is not formed on the surface 113 b of the inorganic bank layer 113 that is shaded by the organic bank layer 114.

(3) Plasma treatment process
Next, a region showing lyophilicity and a region showing liquid repellency are formed on the surface of the element substrate 2.
In the present embodiment, each region is formed by plasma processing. Specifically, the plasma treatment includes a preheating step, a lyophilic process for making the surface of the organic bank layer 114 and the wall surface of the opening 114a, the electrode surface 111a of the pixel electrode 111, and the surface of the inorganic bank layer 113 lyophilic. The process includes a liquefaction process, a lyophobic process that makes the upper surface 20a of the light absorption layer 20 formed on the upper surface 112a of the bank layer 112 and the wall surface of the opening 114a of the organic bank layer 114 lyophobic, and a cooling process.

  That is, the base material (element substrate 2 including a bank or the like) is heated to a predetermined temperature, for example, about 70 to 80 ° C., and then a plasma treatment (O 2 plasma treatment) using oxygen as a reaction gas at atmospheric pressure as a lyophilic process. Do. Next, a plasma treatment (CF4 plasma treatment) using methane tetrafluoride as a reaction gas under atmospheric pressure is performed as a lyophobic process, and then the base material heated for the plasma treatment is cooled to room temperature. Liquidity and liquid repellency are imparted to a predetermined location.

  In this CF4 plasma treatment, the electrode surface 111a of the pixel electrode 111 and the inorganic bank layer 113 are also somewhat affected, but ITO, which is a material of the pixel electrode 111, and SiO2, which is a constituent material of the inorganic bank layer 113, Since TiO2 or the like has a poor affinity for fluorine, the hydroxyl group imparted in the lyophilic step is not substituted with the fluorine group, and the lyophilic property is maintained.

(4) Hole Injection / Transport Layer Formation Step Next, as shown in FIG. 8, the hole injection / transport layer 110a is formed by the hole transport layer formation step. In this hole transport layer forming step, when a polymer material is used, an inkjet method is particularly preferably employed as a droplet discharge method. That is, by this ink jet method, the hole transport layer forming material is selectively disposed on the electrode surface 111a and applied. Thereafter, drying treatment and heat treatment are performed to form the hole injection / transport layer 110 a on the pixel electrode 111. As a material for forming the hole injection / transport layer 110a, for example, a material in which the PEDOT: PSS is dispersed in a polar solvent such as isopropyl alcohol is used.

  Here, in forming the hole injection / transport layer 110a by the ink jet method, first, a hole transport layer forming material is filled in an ink jet head (not shown), and a discharge nozzle of the ink jet head is formed in the inorganic bank layer 113. The liquid droplets whose liquid amount per droplet is controlled from the discharge nozzles while the ink jet head and the base material (element substrate 2) are relatively moved so as to face the electrode surface 111a located in the opening 113a. Discharge onto the surface 111a. Next, the discharged droplets are dried and the dispersion medium and solvent contained in the hole transport layer material are evaporated, thereby forming the hole injection / transport layer 110a.

At this time, the droplets discharged from the discharge nozzle spread on the electrode surface 111a that has been subjected to the lyophilic treatment, and are filled in the opening 113a of the inorganic bank layer 113 so as to face the opening 113a. Become.
On the other hand, on the upper surface 20a of the light absorption layer 20 formed on the upper surface 112a of the bank layer 112 subjected to the liquid repellent treatment, droplets are repelled and do not adhere. Therefore, even if the droplet is displaced from the predetermined discharge position and a part of the droplet is applied to the upper surface 20a of the light absorption layer 20 on the upper surface 112a of the bank layer 112 and the surface of the opening 114a of the organic bank layer 114, The surface does not get wet with droplets, and the repelled droplets are drawn into the openings 114 a of the organic bank layer 114.
In addition, after this positive hole transport layer formation process, it is preferable to carry out in inert gas atmospheres, such as nitrogen atmosphere and argon atmosphere, in order to prevent oxidation and moisture absorption of various formation materials and the formed element.
In this embodiment, the ink jet method is used. However, a hole injecting and transporting material may be formed by vapor deposition through a physical mask using a low molecular material. In this case, only oxygen plasma treatment or ozone UV treatment may be used as pretreatment, and CF4 plasma treatment is not necessarily required.

(5) Light-Emitting Layer Formation Step Next, as shown in FIG. 8, the light-emitting layer 110b is formed by the light-emitting layer formation step.
In the light emitting layer forming step, when a polymer material is used, an ink jet method which is a droplet discharge method is suitably employed as in the formation of the hole injection / transport layer 110a described above. That is, the light emitting layer forming material is discharged onto the hole injecting / transporting layer 110a by the ink jet method, and then dried and heat-treated to thereby form the inside of the opening 114a formed in the organic bank layer 114, that is, the pixel region. A light emitting layer 110b is formed thereon.
The functional layer 110 in the present invention can be formed by the hole injection / transport layer 110a formation process and the light emitting layer 110b formation process. In this embodiment, an ink jet method is used, but a light emitting material may be deposited by vapor deposition through a physical mask using a low molecular material.

(6) Electron Injection Layer Formation Step In the electron injection layer formation step, an electron injection layer 110c made of LiF or the like is formed on the entire surface of the light emitting layer 110b and the bank layer 112 as shown in FIG.
The electron injection layer 110c is preferably formed by a vapor deposition method, a sputtering method, a CVD method, or the like. In particular, the electron injection layer 110c is preferably formed by a vapor deposition method from the viewpoint of preventing damage to the light emitting layer 110b due to heat, plasma, ultraviolet rays, or the like.

(7) Cathode Formation Step In the cathode formation step, the cathode 12 made of a metal oxide such as ITO is formed on the entire surface of the electron injection layer 110c by ion plating.
For example, an alloy of In and Sn is used as a film forming material, and an inert gas such as neon (Ne), argon (Ar), krypton (Kr), or xenon (Xe) can be used as a carrier gas.

(8) Sealing Step In the sealing step, as shown in FIG. 4, after the sealing layer 25 is formed on the cathode 12, as shown in FIG. 3, sealing is performed on the front surface of the substrate 2 on which the light emitting element is formed. This is a step of disposing the stop substrate 604 and bonding the substrate 2 and the sealing substrate 604 with the sealing resin 603. By this process, the sealing portion 3 is formed on the substrate 2.
The sealing step is preferably performed in an inert gas atmosphere such as nitrogen, argon, or helium. If it is carried out in the air, when a defect such as a pinhole has occurred in the cathode 12, water or oxygen may enter the cathode 12 from the defective portion and the cathode 12 may be oxidized, which is not preferable.

  In the organic EL display device 1 according to this embodiment, part of the external light incident on the inside is reflected and partly transmitted by the second metal layer 23 made of Ti of the light absorption layer 20. And the light which permeate | transmitted the 2nd metal layer 23 permeate | transmits ITO which is the transparent conductive layer 22, and is reflected in the 1st metal layer 21 which consists of Ti. At this time, since the light reflected by the first metal layer 21 and the light reflected by the second metal layer 23 interfere and are absorbed, reflection of external light at the pixel electrode 111 can be suppressed. Accordingly, the display light emitted from the light emitting layer 110b and emitted from the sealing portion 3 side does not include external light, so that the contrast can be improved.

  Further, the light absorption layer 20 formed on the pixel electrode surface 111a of the pixel electrode 111 functions as an anode, and can absorb light when the light emitting layer 110b does not emit light. Further, since the cathode 12 and the light absorption layer 20 formed on the upper surface 112a of the bank layer 112 are electrically connected, the light absorption layer 20 electrically assists the cathode 12 having a generally high resistance. In addition, external light incident on the organic EL display device 1 can be absorbed.

  In this embodiment, the hole injection / transport layer 110a, the light emitting layer 110b, and the electron injection layer 110c are formed by an inkjet method, and these layers can be filled up to the pixel region. Therefore, when the cathode 12 is laminated on the upper surface of the electron injection layer 110c, it is possible to prevent further tearing of the cathode 12. If the thickness of the organic layer is controlled, it can also be applied to a vapor deposition method.

(Second Embodiment of Organic EL Device)
Next, a second embodiment according to the present invention will be described with reference to FIG. In each embodiment described below, portions having the same configuration as those of the organic EL display device 1 according to the first embodiment described above are denoted by the same reference numerals, and description thereof is omitted.
In the organic EL display device 200 according to the present embodiment, the difference from the first embodiment is the configuration of the bank layer (partition wall portion) 201.

In the bank layer 201, the organic bank layer 203 is formed on the inorganic bank layer 202 as in the first embodiment. In addition, contact holes 204 are provided in the inorganic bank layer 202 and the organic bank layer 203.
A lead-out wiring 205 for the cathode 12 is formed below the bank layer 201, that is, in the inorganic bank layer 202 between the pixel electrodes 111. The cathode lead-out wiring 205 and the light absorption layer 20 formed on the upper surface of the bank layer 201 are electrically connected through a conductor filled in the contact hole 204.

  In the organic EL display device 200 according to the present embodiment, the light absorption layer 20 formed on the upper surface of the bank layer 201 functions as an auxiliary electrode, and a sufficient current is supplied to the auxiliary electrode through the contact hole 204 from the lead-out wiring 205 of the cathode 12. Since it can supply uniformly over the whole, it becomes possible to improve contrast more.

[Electronics]
Hereinafter, specific examples of the electronic device including the above-described organic EL device will be described.
FIG. 10 is a perspective view showing an example of a mobile phone. In FIG. 10, reference numeral 1000 denotes a mobile phone body, and reference numeral 1001 denotes a display unit using the organic EL device. As described above, by using the organic EL device of the above embodiment for a display portion of an electronic device, an electronic device including a high-performance display portion can be provided at low cost.

The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, the light absorption layer 20 has a three-layer structure of a first metal layer 21, a transparent conductive layer 22, and a second metal layer 23, but is made of a conductive material such as a single layer of carbon black having light absorption. Also good. Further, as shown in FIG. 11, the light absorption layer 20 formed on the pixel electrode surface 111a of the pixel electrode 111 inside the pixel region has conductivity and is formed inside the pixel region and functions as the pixel electrode 111. The light absorption layer 250 may be used. With this configuration, reflection of external light can be suppressed and a layer having an action as an anode can be formed at a time, so that an apparatus with a simple manufacturing process can be provided.
Further, although the materials for forming the light emitting layer 60 are classified into three colors of RGB, the light emitting layer 60 may be a white light emitting layer and may be decomposed by a color filter of three primary colors.

Further, in each of the embodiments described above, the first metal layer of the conductive light absorption layer 20 is laminated by 200 nm or more, so that the conductivity of the light absorption layer 20 can be sufficiently secured, so that it functions sufficiently as an auxiliary electrode of the cathode 12. be able to. Note that the thickness of the first metal layer 21 can be optimized according to the panel size, the light emitting material, and the pixel aperture ratio.
In addition, the work function is 4 on the upper surface 20a of the light absorption layer 20 (the upper surface of the second metal layer 23), that is, on the surface of the light absorption layer 20 in contact with the hole injection / transport layer 110a. A thin film of about 6 to 5.3 eV is preferably formed. Specifically, for example, about 10 nm of ITO is laminated on the light absorption layer (Ti / ITO / Ti) 20. By laminating ITO, the hole injection / transport layer 110a can be easily formed and can function as a protective layer. In addition, as a material used for the interface between the light absorption layer 20 and the hole injection / transport layer 110a, other metals such as gold, copper, iron, Ni, Cr, Co, Mo, Ta, W, Zn, and the like are used. It may be used.

It is a figure which shows the wiring structure of the organic electroluminescent apparatus of the 1st Embodiment of this invention. 1 is a plan view of an organic EL device according to a first embodiment of the present invention. It is II 'sectional drawing of FIG. It is sectional drawing which shows the principal part of the organic EL apparatus of FIG. It is an expanded sectional view which shows the principal part of the organic EL apparatus of FIG. It is process drawing explaining the manufacturing method of the organic electroluminescent apparatus of FIG. It is process drawing explaining the manufacturing method of the organic electroluminescent apparatus of FIG. It is process drawing explaining the manufacturing method of the organic electroluminescent apparatus of FIG. It is a figure which shows the wiring structure of the organic electroluminescent apparatus of the 2nd Embodiment of this invention. It is a schematic block diagram which shows an electronic device. It is a figure which shows the wiring structure of the modification of the organic electroluminescent apparatus of each embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,200 ... Organic EL display device, 2 ... Substrate, 12 ... Cathode (second electrode), 110a ... Hole injection / transport layer (charge injection layer), 110c ... Electron injection layer (charge injection layer), 111 ... Pixel electrode (first electrode), 112... Bank layer (partition wall), 112 a... Upper surface of bank layer, 114 b... Base end of bank layer, 114 c. ... Contact hole, 205 ... Cathode extraction wiring, 1000 ... Electronic equipment

Claims (10)

A plurality of pixel areas arranged on the substrate, a first electrode provided for each of the pixel areas inside the pixel area, and a common area over the plurality of pixel areas above the first electrode An organic EL device that emits light from a light emitting layer disposed above the first electrode to the opposite side of the substrate,
A partition wall formed on the substrate and partitioning each of the pixel regions;
A conductive light absorbing layer formed on the first electrode inside the pixel region;
A conductive light absorption layer formed on the upper surface of the partition;
A light emitting layer formed above the light absorption layer inside the pixel region,
The light absorption layer formed on the first electrode and the light absorption layer formed on the upper surface of the partition wall have the same structure, and the light formed on the second electrode and the upper surface of the partition wall. An organic EL device that is electrically connected to an absorption layer.   The light absorption layer is configured by laminating a first metal layer, a transparent conductive layer, and a second metal layer in this order from the substrate side to the second electrode side. 2. The organic EL device according to 1.   The organic EL device according to claim 1, wherein the light absorption layer is made of a single layer of conductive material having light absorption.   4. The organic EL device according to claim 1, wherein the partition wall portion has a portion having a larger cross-sectional area on a distal end side than a proximal end side close to the substrate. Contact holes are provided in the partition walls,
The light absorption layer formed on the upper surface of the partition wall and the lead-out wiring for the second electrode formed below the partition wall are electrically connected through the contact hole. The organic EL device according to any one of claims 1 to 4.   6. The organic EL device according to claim 1, wherein a height of an edge portion of the light emitting layer substantially coincides with a height of an upper surface of the partition wall portion. A plurality of pixel areas arranged on the substrate, a first electrode provided for each of the pixel areas inside the pixel area, and a common area over the plurality of pixel areas above the first electrode An organic EL device that emits light from a light emitting layer disposed above the first electrode to the opposite side of the substrate,
A partition wall formed on the substrate and partitioning each of the pixel regions;
A light absorption layer that has conductivity and is formed inside the pixel region and functions as the first electrode;
A conductive light absorption layer formed on the upper surface of the partition;
A light emitting layer formed above the light absorption layer inside the pixel region,
The light absorption layer formed inside the pixel electrode and the light absorption layer formed on the upper surface of the partition wall have the same configuration, and the light absorption layer formed on the second electrode and the upper surface of the partition wall Is an organic EL device that is electrically connected. Forming the partition on the substrate;
Forming a conductive light-absorbing material on the substrate on which the partition wall is formed by vapor deposition, and simultaneously forming a light-absorbing layer made of the conductive light-absorbing material in the pixel region and on the top of the partition; The method of manufacturing an organic EL device according to claim 1, wherein   9. The method of manufacturing an organic EL device according to claim 8, wherein a charge injection layer and the light emitting layer are formed on a light absorption layer formed inside the pixel region by a droplet discharge method. An electronic apparatus comprising the organic EL device according to claim 1 as a display unit.

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