JP4815734B2 - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP4815734B2
JP4815734B2 JP2003102713A JP2003102713A JP4815734B2 JP 4815734 B2 JP4815734 B2 JP 4815734B2 JP 2003102713 A JP2003102713 A JP 2003102713A JP 2003102713 A JP2003102713 A JP 2003102713A JP 4815734 B2 JP4815734 B2 JP 4815734B2
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Japan
Prior art keywords
layer
nitride semiconductor
light guide
laser device
semiconductor laser
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Expired - Lifetime
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JP2003102713A
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English (en)
Japanese (ja)
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JP2003264343A5 (enrdf_load_stackoverflow
JP2003264343A (ja
Inventor
徳也 小崎
雅彦 佐野
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
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Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2003102713A priority Critical patent/JP4815734B2/ja
Publication of JP2003264343A publication Critical patent/JP2003264343A/ja
Publication of JP2003264343A5 publication Critical patent/JP2003264343A5/ja
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Publication of JP4815734B2 publication Critical patent/JP4815734B2/ja
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Expired - Lifetime legal-status Critical Current

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  • Semiconductor Lasers (AREA)
JP2003102713A 1999-06-10 2003-04-07 窒化物半導体レーザ素子 Expired - Lifetime JP4815734B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003102713A JP4815734B2 (ja) 1999-06-10 2003-04-07 窒化物半導体レーザ素子

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP16349999 1999-06-10
JP11-163499 1999-06-10
JP1999163499 1999-06-10
JP2003102713A JP4815734B2 (ja) 1999-06-10 2003-04-07 窒化物半導体レーザ素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000099796A Division JP3685682B2 (ja) 1999-06-10 2000-03-31 窒化物半導体レーザ素子

Publications (3)

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JP2003264343A JP2003264343A (ja) 2003-09-19
JP2003264343A5 JP2003264343A5 (enrdf_load_stackoverflow) 2007-05-24
JP4815734B2 true JP4815734B2 (ja) 2011-11-16

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ID=29217506

Family Applications (1)

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JP2003102713A Expired - Lifetime JP4815734B2 (ja) 1999-06-10 2003-04-07 窒化物半導体レーザ素子

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JP (1) JP4815734B2 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005277401A (ja) * 2004-02-24 2005-10-06 Showa Denko Kk 窒化ガリウム系化合物半導体積層物およびその製造方法
JP2011018784A (ja) 2009-07-09 2011-01-27 Sony Corp 半導体レーザ素子及びその駆動方法、並びに、半導体レーザ装置
JP2013191895A (ja) * 2013-07-03 2013-09-26 Sony Corp 半導体レーザ素子及びその駆動方法、並びに、半導体レーザ装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3015371B2 (ja) * 1988-01-20 2000-03-06 株式会社東芝 半導体レーザ
JPH0637389A (ja) * 1992-07-16 1994-02-10 Hitachi Ltd 半導体レーザ素子の製造方法
JP2980302B2 (ja) * 1994-03-02 1999-11-22 日本電気株式会社 半導体レーザ
JPH09199798A (ja) * 1996-01-18 1997-07-31 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP3336599B2 (ja) * 1996-03-11 2002-10-21 日亜化学工業株式会社 窒化物半導体レーザ素子
JP3431389B2 (ja) * 1996-03-25 2003-07-28 日亜化学工業株式会社 窒化物半導体レーザ素子
JPH1065271A (ja) * 1996-08-13 1998-03-06 Toshiba Corp 窒化ガリウム系半導体光発光素子
JP3434162B2 (ja) * 1997-02-17 2003-08-04 日亜化学工業株式会社 窒化物半導体素子

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JP2003264343A (ja) 2003-09-19

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