JP2003264343A5 - - Google Patents

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Publication number
JP2003264343A5
JP2003264343A5 JP2003102713A JP2003102713A JP2003264343A5 JP 2003264343 A5 JP2003264343 A5 JP 2003264343A5 JP 2003102713 A JP2003102713 A JP 2003102713A JP 2003102713 A JP2003102713 A JP 2003102713A JP 2003264343 A5 JP2003264343 A5 JP 2003264343A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2003102713A
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Japanese (ja)
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JP4815734B2 (ja
JP2003264343A (ja
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Priority to JP2003102713A priority Critical patent/JP4815734B2/ja
Priority claimed from JP2003102713A external-priority patent/JP4815734B2/ja
Publication of JP2003264343A publication Critical patent/JP2003264343A/ja
Publication of JP2003264343A5 publication Critical patent/JP2003264343A5/ja
Application granted granted Critical
Publication of JP4815734B2 publication Critical patent/JP4815734B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2003102713A 1999-06-10 2003-04-07 窒化物半導体レーザ素子 Expired - Lifetime JP4815734B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003102713A JP4815734B2 (ja) 1999-06-10 2003-04-07 窒化物半導体レーザ素子

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP16349999 1999-06-10
JP11-163499 1999-06-10
JP1999163499 1999-06-10
JP2003102713A JP4815734B2 (ja) 1999-06-10 2003-04-07 窒化物半導体レーザ素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000099796A Division JP3685682B2 (ja) 1999-06-10 2000-03-31 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2003264343A JP2003264343A (ja) 2003-09-19
JP2003264343A5 true JP2003264343A5 (enrdf_load_stackoverflow) 2007-05-24
JP4815734B2 JP4815734B2 (ja) 2011-11-16

Family

ID=29217506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003102713A Expired - Lifetime JP4815734B2 (ja) 1999-06-10 2003-04-07 窒化物半導体レーザ素子

Country Status (1)

Country Link
JP (1) JP4815734B2 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005277401A (ja) * 2004-02-24 2005-10-06 Showa Denko Kk 窒化ガリウム系化合物半導体積層物およびその製造方法
JP2011018784A (ja) 2009-07-09 2011-01-27 Sony Corp 半導体レーザ素子及びその駆動方法、並びに、半導体レーザ装置
JP2013191895A (ja) * 2013-07-03 2013-09-26 Sony Corp 半導体レーザ素子及びその駆動方法、並びに、半導体レーザ装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3015371B2 (ja) * 1988-01-20 2000-03-06 株式会社東芝 半導体レーザ
JPH0637389A (ja) * 1992-07-16 1994-02-10 Hitachi Ltd 半導体レーザ素子の製造方法
JP2980302B2 (ja) * 1994-03-02 1999-11-22 日本電気株式会社 半導体レーザ
JPH09199798A (ja) * 1996-01-18 1997-07-31 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP3336599B2 (ja) * 1996-03-11 2002-10-21 日亜化学工業株式会社 窒化物半導体レーザ素子
JP3431389B2 (ja) * 1996-03-25 2003-07-28 日亜化学工業株式会社 窒化物半導体レーザ素子
JPH1065271A (ja) * 1996-08-13 1998-03-06 Toshiba Corp 窒化ガリウム系半導体光発光素子
JP3434162B2 (ja) * 1997-02-17 2003-08-04 日亜化学工業株式会社 窒化物半導体素子

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