JP4815329B2 - Mask holding device and mask attaching / detaching method - Google Patents

Mask holding device and mask attaching / detaching method Download PDF

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JP4815329B2
JP4815329B2 JP2006311296A JP2006311296A JP4815329B2 JP 4815329 B2 JP4815329 B2 JP 4815329B2 JP 2006311296 A JP2006311296 A JP 2006311296A JP 2006311296 A JP2006311296 A JP 2006311296A JP 4815329 B2 JP4815329 B2 JP 4815329B2
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substrate
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magnetic flux
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JP2008127593A (en
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喜成 近藤
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Canon Tokki Corp
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Description

本発明は、マスク保持装置及びマスク着脱方法に関するものである。   The present invention relates to a mask holding device and a mask attaching / detaching method.

従来から、成膜処理が施される基板の表面にマスクを磁石部により吸着保持するマスク保持装置がある。このマスク保持装置は、一般的には、基板の裏面側に配設されるマグネットにより基板の表面に（磁性体を含む）マスクを吸着保持する構成である。   2. Description of the Related Art Conventionally, there is a mask holding device that holds a mask on a surface of a substrate on which a film forming process is performed by a magnet portion. This mask holding device is generally configured to attract and hold a mask (including a magnetic material) on the surface of a substrate by a magnet disposed on the back side of the substrate.

このようなマスク保持装置を用いてのマスクの着脱は、例えば以下のような手順で行っていた。尚、図１，２中、符号24は基板21を保持する基板保持部、25はマスク22を保持するマスク保持部、26は基板21を押さえ付ける基板押付部、27はマグネット23を支持するシャフトである。   The attachment / detachment of the mask using such a mask holding device is performed by the following procedure, for example. 1 and 2, reference numeral 24 denotes a substrate holding part for holding the substrate 21, 25 denotes a mask holding part for holding the mask 22, 26 denotes a substrate pressing part for pressing the substrate 21, and 27 denotes a shaft for supporting the magnet 23. It is.

先ず、図１に図示したように、基板21を上方から基板押付部26により押さえ付け((ａ)→(ｂ))、マスク保持部25を上昇せしめて、マスク22と基板21のアライメント調整後にマスク22を基板21に重合せしめた後((ｂ)→(ｃ))、マグネット23を基板21の裏面に当接せしめ((ｃ)→(ｄ))、基板押付部26を離脱せしめ((ｄ)→(ｅ))、続いて、基板保持部24を離脱せしめて((ｅ)→(ｆ))、マスク22，基板21及びマグネット23を重合し、マグネット23によりマスク22を基板21表面に密着せしめた状態を作出する。   First, as shown in FIG. 1, the substrate 21 is pressed from above by the substrate pressing portion 26 ((a) → (b)), the mask holding portion 25 is raised, and the alignment of the mask 22 and the substrate 21 is adjusted. After the mask 22 is superposed on the substrate 21 ((b) → (c)), the magnet 23 is brought into contact with the back surface of the substrate 21 ((c) → (d)), and the substrate pressing portion 26 is released (( d) → (e)), then, the substrate holding part 24 is detached ((e) → (f)), the mask 22, the substrate 21 and the magnet 23 are polymerized, and the mask 22 is attached to the surface of the substrate 21 by the magnet 23. Create a state of close contact with.

続いて、例えば上記の状態で成膜処理を行った後、図２に図示したように、基板保持部24により基板21を保持し((ａ)→(ｂ))、基板押付部26で基板21を押さえ付け((ｂ)→(ｃ))、基板21からマグネット23をマスク22との吸引力に抗して引き剥がし((ｃ)→(ｄ))、マスク保持部25を降下せしめてマスク22を基板21表面から離脱させ((ｄ)→(ｅ))、基板押付部26を離脱せしめる((ｅ)→(ｆ))。   Subsequently, for example, after the film forming process is performed in the above-described state, the substrate 21 is held by the substrate holding unit 24 ((a) → (b)) as shown in FIG. 21 is pressed ((b) → (c)), the magnet 23 is peeled off from the substrate 21 against the attractive force with the mask 22 ((c) → (d)), and the mask holding part 25 is lowered. The mask 22 is detached from the surface of the substrate 21 ((d) → (e)), and the substrate pressing portion 26 is detached ((e) → (f)).

ところで、基板が大型化するとマスクも大型となり、このマスクを基板表面に密着するように吸着保持するには、極めて強力なマグネットを用いる必要がある。   By the way, when the substrate is enlarged, the mask is also enlarged. In order to attract and hold the mask so as to be in close contact with the substrate surface, it is necessary to use an extremely strong magnet.

しかしながら、マグネットにより基板表面にマスクを吸着した場合、マスクを離脱させる際には、上述したように、マグネットを、このマグネットとマスクとの吸引力に抗して基板裏面から強い力で引き剥がす必要があり、この引き剥がしの際に基板が微動し、離脱したマスクと基板との相対的な微動により基板表面に形成された素子（成膜層）を傷つけるおそれがあり、特にマグネットが強力なほど強い力で引き剥がす必要があり、成膜層を傷つけるおそれが高くなる。尚、例えば弱いマグネットを用いることで、引き剥がす際に必要な力を小さくすることは可能ではあるが、マグネットによるマスクの吸着保持力が小さいとマスクにたわみが生じ、素子パターンの精度が低下する。   However, when the mask is attracted to the substrate surface with a magnet, when removing the mask, as described above, the magnet must be peeled off from the back of the substrate with a strong force against the attractive force between the magnet and the mask. There is a risk that the substrate may be slightly moved during this peeling, and the element (film formation layer) formed on the substrate surface may be damaged by the relative slight movement of the detached mask and the substrate. It is necessary to peel off with a strong force, and the risk of damaging the film formation layer increases. Although it is possible to reduce the force required for peeling by using a weak magnet, for example, if the mask holding force of the magnet is small, the mask will bend and the accuracy of the element pattern will be reduced. .

そこで、例えば特許文献１〜３には、上記マグネットの基板裏面からの引き剥がしを容易化する技術が開示されている。   Thus, for example, Patent Documents 1 to 3 disclose techniques for facilitating the peeling of the magnet from the back surface of the substrate.

特開平１０−３１７１３９号公報Japanese Patent Laid-Open No. 10-317139 特許第３５９２６９０号公報Japanese Patent No. 3592690 特開２００５−１８７８７５号公報JP 2005-187875 A

しかしながら、上記特許文献１には、「マスク固定用の丸磁石を固定した基板保持体を擁して、その上面にマスクを丸磁石によって固定する。更に、そのマスクの上面に基板を載置する。その基板上面部に、マスクの密着のための磁石枠構造体を載置する。磁石はマスクの周縁部及び桟部に配置するように位置を決定される。この構造により、マスクの着脱は磁石枠構造体を基板上から容易にはがせる。」旨が記載されているが、磁石枠構造体（マグネット）の着脱動作は、上記従来の着脱動作と同様であり、この際の基板表面上の素子への影響は回避できない。更に、基板を保持可能な大きさを有する基板保持体が余分に必要となり、基板保持体の搬送・格納等のための設備が別途必要で設備の大型化を招くことになる。また、近年の基板は大型化が著しく、特許文献１の出願当時の量産サイズ（Ｇ３：５５０ｍｍ×６６０ｍｍ）に比してかなり大きく（Ｇ７：１８７０ｍｍ×２２００ｍｍ）、実用化は困難である。   However, in the above-mentioned Patent Document 1, “a substrate holding body to which a mask fixing round magnet is fixed is held, and the mask is fixed to the upper surface by the round magnet. Further, the substrate is placed on the upper surface of the mask. A magnet frame structure for closely attaching the mask is placed on the upper surface of the substrate, and the positions of the magnets are determined so as to be arranged on the peripheral edge and the crosspiece of the mask. Although the frame structure can be easily peeled off from the substrate, the attachment / detachment operation of the magnet frame structure (magnet) is the same as the conventional attachment / detachment operation, and the element on the substrate surface at this time The impact on the environment cannot be avoided. Furthermore, an extra substrate holder having a size capable of holding the substrate is required, and additional equipment for transporting and storing the substrate holder is required, resulting in an increase in the size of the equipment. In recent years, the substrate has been remarkably increased in size, and is considerably larger (G7: 1870 mm × 2200 mm) than the mass production size (G3: 550 mm × 660 mm) at the time of filing of Patent Document 1, and practical application is difficult.

また、上記特許文献２には、「永久磁石が配置されたシャドーマスクホルダユニットとガラス基板の上面に配置し、永久磁石及び該永久磁石の磁力を増減制御し得るように極性方向が調節可能な電磁石が配置されたシャドーマスク安着テーブルをガラス基板下面に配する。具体的には、シャドーマスクをガラス基板に装着する際は、シャドーマスク安着テーブルの磁力を弱くするように電磁石に流す向きの電流を与え、シャドーマスクをガラス基板から除去する際は、上記と逆の電流を流す事により、ガラスマスク安着テーブルの磁力を強くする。」旨が記載されており、この特許文献２に記載の技術によれば、シャドーマスク安着テーブル（マグネット）の着脱動作に伴う基板表面上の素子への影響を回避することは可能である。しかしながら、永久磁石の磁力の増減を行うために、相対配置した電磁石とその磁力調整用の機構が別途必要となり、装置構成全体が複雑化・大型化し、更に、基板の大型化に際して電磁石のユニットが大型化し、設備コストが大きくなるため、実現性に乏しい。   In addition, the above-mentioned Patent Document 2 states that “the shadow mask holder unit on which the permanent magnet is arranged and the upper surface of the glass substrate are arranged, and the polarity direction can be adjusted so that the permanent magnet and the magnetic force of the permanent magnet can be increased or decreased. Place the shadow mask seating table on which the electromagnet is placed on the bottom surface of the glass substrate.Specifically, when mounting the shadow mask on the glass substrate, the direction that the shadow mask seating table is made to flow through the electromagnet to weaken the magnetic force of the shadow mask seating table When removing the shadow mask from the glass substrate, the magnetic force of the glass mask seating table is strengthened by applying a current opposite to that described above. According to the described technique, it is possible to avoid the influence on the element on the substrate surface due to the attaching / detaching operation of the shadow mask attachment table (magnet). However, in order to increase or decrease the magnetic force of the permanent magnet, a separately disposed electromagnet and a mechanism for adjusting the magnetic force are separately required, and the entire apparatus configuration becomes complicated and large. It is not feasible because it is large and equipment costs increase.

また、上記特許文献３には、「スペーサ内に押し込んだ磁気シールド内にマグネットの磁場を閉じ込め、マスクに作用している吸着力を消滅若しくは減少させることにより、基板に大きな力を作用させること無く、マスクを取り外すことが可能になる。」旨が記載されており、この特許文献３に記載の技術によれば、マグネットの着脱動作に伴う基板表面上の素子への影響を回避することは可能である。しかしながら、基板とマグネットとの間に磁気シールド材を挿入するためのスペーサが必要となり、小型の基板であれば問題は小さくとも、近年の大型基板に対応するのは実際上問題があり、困難である。具体的には、磁気シールド材は、基板サイズに合わせて大面積である必要があり、処理室も磁気シールド材をスペーサへの出し入れを可能とする大きさが必要となる。よって、実現性に乏しい。   Further, the above-mentioned Patent Document 3 states that “a magnetic field of a magnet is confined in a magnetic shield pushed into a spacer, and an attractive force acting on the mask is eliminated or reduced, so that a large force is not applied to the substrate. According to the technique described in Patent Document 3, it is possible to avoid the influence on the element on the substrate surface due to the attaching / detaching operation of the magnet. It is. However, a spacer for inserting a magnetic shielding material is required between the substrate and the magnet, and even if the problem is small if it is a small substrate, it is practically difficult to deal with recent large substrates, and it is difficult. is there. Specifically, the magnetic shield material needs to have a large area in accordance with the substrate size, and the processing chamber also needs to be large enough to allow the magnetic shield material to be taken in and out of the spacer. Therefore, feasibility is poor.

また、マグネットは上述のように強い力で基板裏面から引き剥がす必要があることから、このマグネットには、マグネットを基板裏面に対して接離せしめるシャフトが連結され、このシャフトはチャンバー（処理室）内に上下動自在に設けられており、例えば多数のチャンバーを搬送室を介して連設一体化せしめて成るクラスター型や多数のチャンバーを直線状に連設一体化せしめて成るインライン型の成膜装置においては、マグネットは各チャンバー毎に設けられており、基板を各チャンバーに搬送する度に基板とマスクとのアライメント動作が必要となり、また、搬出する度に上記離脱動作が必要となる。従って、それだけ１枚の基板にかかる総処理時間（タクトタイム）が長時間化してしまうという問題点がある。   In addition, since the magnet needs to be peeled off from the back surface of the substrate with a strong force as described above, a shaft for connecting and separating the magnet to and from the back surface of the substrate is connected to this magnet, and this shaft is a chamber (processing chamber). For example, a cluster type in which a large number of chambers are connected and integrated through a transfer chamber, or an in-line type film in which a number of chambers are linearly connected and integrated. In the apparatus, a magnet is provided for each chamber, and an alignment operation between the substrate and the mask is required every time the substrate is transferred to each chamber, and the above-described detachment operation is required every time the substrate is transferred. Therefore, there is a problem that the total processing time (tact time) required for one substrate is increased.

本発明は、上述のような現状に鑑みなされたもので、極めて簡単な構造で磁石部によるマスクの吸着保持力を増減することを可能とし、基板表面の素子が損傷を受けることなくマスクの着脱を行うことができ、それだけ強力な磁石部により基板表面にマスクをより密着させることが可能で、より精細な素子パターンの成膜が可能となり、更に、磁石部を処理室とは独立して利用可能となる等、極めて実用性に秀れたマスク保持装置及びマスク着脱方法を提供するものである。   The present invention has been made in view of the present situation as described above, and it is possible to increase / decrease the holding force of the mask by the magnet portion with an extremely simple structure, and to attach / detach the mask without damaging the elements on the substrate surface. The mask can be more closely attached to the surface of the substrate by the powerful magnet part, so that a finer element pattern can be formed, and the magnet part is used independently of the processing chamber. The present invention provides a mask holding device and a mask attaching / detaching method that are extremely practical, such as being possible.

添付図面を参照して本発明の要旨を説明する。   The gist of the present invention will be described with reference to the accompanying drawings.

成膜処理が施される基板１の表面側にマスク２を磁石部３により吸着保持するマスク保持装置であって、この磁石部３は、前記基板１の裏面に対し接離自在に設けて、前記基板１の裏面に当接若しくは近接せしめることで前記マスク２を前記基板１の表面側に磁気的に吸着保持し得るように構成し、この磁石部３と当接若しくは近接することでこの磁石部３による前記マスク２の吸着保持力を減少させる磁束誘導体４を前記磁石部３の前記基板１の裏面と対向する一面側とは反対側の他面側に対し接離自在に設けたことを特徴とするマスク保持装置に係るものである。 A mask holding device for attracting and holding the mask 2 by the magnet unit 3 on the surface side of the substrate 1 on which the film forming process is performed. The magnet unit 3 is provided so as to be able to contact with and separate from the back surface of the substrate 1, The mask 2 can be magnetically attracted and held on the front side of the substrate 1 by contacting or approaching the back surface of the substrate 1, and this magnet can be configured by contacting or approaching the magnet unit 3. The magnetic flux derivative 4 that reduces the adsorption holding force of the mask 2 by the portion 3 is provided so as to be able to contact with and separate from the other surface side opposite to the one surface facing the back surface of the substrate 1 of the magnet portion 3. The present invention relates to a featured mask holding device.

また、前記磁束誘導体４が当接若しくは近接せしめられて前記マスク２の吸着保持力が減少せしめられた前記磁石部３を、前記マスク２が重合せしめられる前記基板１の裏面に当接若しくは近接せしめて、前記磁束誘導体４をこの磁石部３から離反せしめることで、この磁石部３による前記マスク２の吸着保持力を増大せしめてこのマスク２を前記基板１の表面側に吸着保持し得るように構成すると共に、この基板１の裏面に当接若しくは近接せしめられこの基板１の表面にマスク２を吸着保持する前記磁石部３に、前記磁束誘導体４を当接若しくは近接せしめてこの磁石部３によるマスク２の吸着保持力を減少させて、このマスク２を前記基板１の表面から離脱せしめ得るように構成したことを特徴とする請求項１記載のマスク保持装置に係るものである。   In addition, the magnet portion 3 whose magnetic holding force of the mask 2 is reduced by the magnetic flux derivative 4 abutting or approaching is brought into contact with or close to the back surface of the substrate 1 on which the mask 2 is superposed. Thus, by separating the magnetic flux derivative 4 from the magnet portion 3, the suction holding force of the mask 2 by the magnet portion 3 can be increased so that the mask 2 can be sucked and held on the surface side of the substrate 1. In addition, the magnetic flux derivative 4 is brought into contact with or close to the magnet portion 3 that is brought into contact with or close to the back surface of the substrate 1 and holds the mask 2 on the surface of the substrate 1. The mask holding device according to claim 1, wherein the suction holding force of the mask (2) is reduced so that the mask (2) can be detached from the surface of the substrate (1). Is shall.

また、前記磁石部３は、前記基板１の裏面に当接若しくは近接する基体５と、この基体５上に複数凸設状態に配設される磁石６とで構成し、前記磁束誘導体４に、この磁石６が嵌合配設される凹部７を設けて、この磁束誘導体４を前記磁石部３に当接若しくは近接せしめた際、この凹部７に前記磁石６が嵌合配設されるように構成したことを特徴とする請求項１，２のいずれか１項に記載のマスク保持装置に係るものである。 The magnet unit 3 includes a base body 5 that is in contact with or close to the back surface of the substrate 1 and magnets 6 that are arranged in a plurality of protruding states on the base body 5. A concave portion 7 in which the magnet 6 is fitted and disposed is provided, and when the magnetic flux derivative 4 is brought into contact with or close to the magnet portion 3, the magnet 6 is fitted and disposed in the concave portion 7. The mask holding device according to claim 1 , wherein the mask holding device is configured.

また、前記磁束誘導体４に、前記磁石部３に対し磁束誘導体４を接離する際にこの磁石部３を基板１の裏面に押さえ付ける押付体８が挿通する挿通部９を設け、この挿通部９を挿通する前記押付体８が前記磁束誘導体４の接離動をガイドし得るように構成したことを特徴とする請求項１〜３のいずれか１項に記載のマスク保持装置に係るものである。 The magnetic flux derivative 4 is provided with an insertion portion 9 through which a pressing body 8 that presses the magnet portion 3 against the back surface of the substrate 1 when the magnetic flux derivative 4 is brought into contact with and separated from the magnet portion 3 is inserted. but the pressing member 8 for inserting the 9 according to the mask holding device according to any one of claims 1 to 3, characterized by being configured so as to guide the contact Hanaredo of the magnetic flux 4 is there.

また、成膜処理が施される基板１の表面側にマスク２を磁石部３により吸着保持するマスク保持装置であって、この磁石部３は、前記基板１の裏面に対し接離自在に設けて、前記基板１の裏面に当接若しくは近接せしめることで前記マスク２を前記基板１の表面側に磁気的に吸着保持し得るように構成し、この磁石部３と当接若しくは近接することでこの磁石部３による前記マスク２の吸着保持力を減少させる磁束誘導体４を前記磁石部３の前記基板１の裏面と対向する一面側とは反対側の他面側に対し接離自在に設けたマスク保持装置を用い、前記磁束誘導体４が当接若しくは近接せしめられた前記磁石部３を前記基板１の裏面に当接若しくは近接せしめると共に前記基板１とマスク２とを重合せしめ、前記磁束誘導体４を前記磁石部３から離反せしめることでこの磁石部３による前記マスク２の吸着保持力を増大せしめて基板１の表面にマスク２を吸着保持した後、この基板１の裏面に当接若しくは近接せしめられこの基板１の表面にマスク２を吸着保持する前記磁石部３に、前記磁束誘導体４を当接若しくは近接せしめてこの磁石部３によるマスク２の吸着保持力を減少させて、このマスク２を前記基板１の表面から離脱せしめることを特徴とするマスク着脱方法に係るものである。 Further, the mask holding device holds the mask 2 on the surface side of the substrate 1 on which the film forming process is performed by the magnet unit 3, and the magnet unit 3 is provided so as to be able to contact with and separate from the back surface of the substrate 1. The mask 2 can be magnetically attracted and held on the front surface side of the substrate 1 by contacting or approaching the back surface of the substrate 1, and by contacting or approaching the magnet portion 3. A magnetic flux derivative 4 that reduces the adsorption holding force of the mask 2 by the magnet unit 3 is provided so as to be able to contact with and separate from the other side of the magnet unit 3 opposite to the one side facing the back surface of the substrate 1. Using a mask holding device, the magnetic part 3 to which the magnetic flux derivative 4 is brought into contact or close to the magnetic part 3 is brought into contact with or close to the back surface of the substrate 1 and the substrate 1 and the mask 2 are superposed to form the magnetic flux derivative 4. The magnet part 3 When the mask 2 is attracted and held on the surface of the substrate 1 by increasing the attracting / holding force of the mask 2 by separating the magnet 2, the surface of the substrate 1 is brought into contact with or brought close to the back surface of the substrate 1. The magnet 2 that attracts and holds the mask 2 is brought into contact with or close to the magnetic flux derivative 4 to reduce the attracting and holding force of the mask 2 by the magnet 3 so that the mask 2 is removed from the surface of the substrate 1. The present invention relates to a mask attaching / detaching method characterized by detaching.

本発明は、上述のように構成したから、極めて簡単な構造で磁石部によるマスクの吸着保持力を増減することを可能とし、基板表面の素子が損傷を受けることなくマスクの着脱を行うことができ、それだけ強力な磁石部により基板表面にマスクをより密着させることが可能で、より精細な素子パターンの成膜が可能となり、更に、磁石部を処理室とは独立して利用可能となる等、極めて実用性に秀れたマスク保持装置及びマスク着脱方法となる。   Since the present invention is configured as described above, it is possible to increase / decrease the attraction / holding force of the mask by the magnet portion with a very simple structure, and to attach / detach the mask without damaging the elements on the substrate surface. It is possible to make the mask more closely attached to the substrate surface with such a powerful magnet part, so that a finer element pattern can be formed, and the magnet part can be used independently of the processing chamber, etc. Thus, the mask holding device and the mask attaching / detaching method are excellent in practicality.

好適と考える本発明の実施形態（発明をどのように実施するか）を、図面に基づいて本発明の作用を示して簡単に説明する。   Embodiments of the present invention that are considered suitable (how to carry out the invention) will be briefly described with reference to the drawings, illustrating the operation of the present invention.

表面側にマスク２が重合された基板１の裏面に磁石部３を当接（若しくは近接）せしめると、磁石部３から生じる磁束は、この基板１（例えばガラス基板）を介してマスク２（例えばメタルマスク）を通過する（そして磁石部３に戻る）ことで、この磁石部３とマスク２との間に吸引力が生じ、マスク２は基板１の表面に吸着保持される。   When the magnet portion 3 is brought into contact (or close proximity) with the back surface of the substrate 1 on which the mask 2 is superposed on the front surface side, the magnetic flux generated from the magnet portion 3 passes through the substrate 1 (for example, a glass substrate) through the mask 2 (for example, glass substrate). By passing through the metal mask (and returning to the magnet unit 3), an attractive force is generated between the magnet unit 3 and the mask 2, and the mask 2 is attracted and held on the surface of the substrate 1.

この際、磁石部３に磁束誘導体４を当接（若しくは近接）せしめると、磁石部３によるマスク２の吸着保持力が減少する。具体的には、例えば磁束誘導体４をマスク２より高透磁率の材料で形成した場合、この磁束誘導体４が磁石部３に当接（若しくは近接）すると、マスク２を通過していた磁石部３から生じる磁束の少なくとも一部が、このマスク２を迂回するように磁束誘導体４内を通過する（そして磁石部３に戻る）ことになり、マスク２を通過する磁束が減少することで、マスク２と磁石部３との間に生じる吸引力が減少する。   At this time, if the magnetic flux derivative 4 is brought into contact with (or close to) the magnet portion 3, the suction holding force of the mask 2 by the magnet portion 3 decreases. Specifically, for example, when the magnetic flux derivative 4 is formed of a material having a higher magnetic permeability than the mask 2, when the magnetic flux derivative 4 abuts (or approaches) the magnet portion 3, the magnet portion 3 that has passed through the mask 2. At least a part of the magnetic flux generated from the magnetic flux passes through the magnetic flux derivative 4 so as to bypass the mask 2 (and returns to the magnet portion 3), and the magnetic flux passing through the mask 2 is reduced. And the magnetic force generated between the magnet portion 3 is reduced.

従って、本発明によれば、磁束誘導体４が当接（若しくは近接）せしめられた磁石部３を基板１の裏面に当接（若しくは近接）せしめると共に基板１とマスク２とを重合せしめ、磁束誘導体４を磁石部３から離反せしめることでこの磁石部３によるマスク２の吸着保持力を増大せしめて基板１の表面にマスク２を吸着保持した後、この磁石部３に、磁束誘導体４を当接若しくは近接せしめてこの磁石部３によるマスク２の吸着保持力を減少させて、このマスク２を基板１の表面から離脱せしめることが可能となる。   Therefore, according to the present invention, the magnetic part 3 with which the magnetic flux derivative 4 is brought into contact (or close) is brought into contact with (or close to) the back surface of the substrate 1 and the substrate 1 and the mask 2 are superposed to form a magnetic flux derivative. 4 is moved away from the magnet portion 3 to increase the suction holding force of the mask 2 by the magnet portion 3 so that the mask 2 is attracted and held on the surface of the substrate 1, and then the magnetic flux derivative 4 is brought into contact with the magnet portion 3. Alternatively, it is possible to remove the mask 2 from the surface of the substrate 1 by reducing the suction holding force of the mask 2 by the magnet unit 3.

即ち、磁束誘導体４を当接（若しくは近接）せしめて磁石部３によるマスク２の吸着保持力を減少させた状態でこの磁石部３を基板１の裏面から離脱させることができるから、それだけ磁石部３を基板１の裏面から引き剥がす力は小さくて済み、磁石部３を基板１の裏面から離脱せしめることでマスク２を基板１の表面から簡単に離脱させることができる（磁束誘導体４の材料や形状を適宜設定することで、この磁束誘導体４を磁石部３に当接若しくは近接させることにより、自重によりマスク２を基板１の表面から離脱させることも可能。）。よって、この引き剥がしの際に基板１が微動することに起因する基板１の表面に形成された素子の損傷等を防止できることになる。   That is, the magnetic part 3 can be detached from the back surface of the substrate 1 in a state where the magnetic flux derivative 4 is brought into contact (or close) and the attracting and holding force of the mask 2 by the magnet part 3 is reduced. The force for peeling 3 from the back surface of the substrate 1 is small, and the mask 2 can be easily detached from the surface of the substrate 1 by detaching the magnet part 3 from the back surface of the substrate 1 (the material of the magnetic flux derivative 4 or the like). By appropriately setting the shape, the mask 2 can be detached from the surface of the substrate 1 by its own weight by bringing the magnetic flux derivative 4 into contact with or close to the magnet portion 3. Therefore, it is possible to prevent damage or the like of elements formed on the surface of the substrate 1 due to the slight movement of the substrate 1 at the time of peeling.

また、磁石部３を基板１の裏面から強い力で引き剥がす必要がないため、処理室毎にシャフトに連結した状態とする必要がなく、磁石部３は処理室とは独立して利用可能となる。従って、例えば、クラスター型やインライン型の成膜装置のアライメント室にて一度基板１にマスク２を磁石部３により吸着保持したら（同一パターンの成膜であれば）、磁石部３を基板１の裏面に設けた状態のまま他の処理室に搬送することができ、各処理室に搬送する度に一々基板１とマスク２とのアライメントを行う必要なく次々に各処理室にて処理を行うことが可能となり、タクトタイムを極めて短縮可能となる。また、各処理室毎にアライメント機構を設ける必要がなく、大幅に装置コストを低減できる。   Moreover, since it is not necessary to peel off the magnet part 3 from the back surface of the board | substrate 1 with strong force, it is not necessary to make it the state connected with the shaft for every process chamber, and the magnet part 3 can be utilized independently of a process chamber. Become. Therefore, for example, once the mask 2 is attracted and held on the substrate 1 by the magnet unit 3 in the alignment chamber of the cluster type or in-line type film forming apparatus (if the film has the same pattern), the magnet unit 3 is attached to the substrate 1. The substrate 1 can be transferred to another processing chamber while being provided on the back surface, and each substrate is processed one after another without having to align the substrate 1 and the mask 2 each time the substrate is transferred to each processing chamber. The tact time can be extremely shortened. Further, it is not necessary to provide an alignment mechanism for each processing chamber, and the apparatus cost can be greatly reduced.

本発明の具体的な実施例について図３〜６に基づいて説明する。   A specific embodiment of the present invention will be described with reference to FIGS.

本実施例は、成膜処理が施される基板１（ガラス基板）の表面側にマスク２（磁性体たるニッケル等を含むメタルマスク）を磁石部３により吸着保持するマスク保持装置であって、この磁石部３は、前記基板１の裏面に対し接離自在に設けて、前記基板１の裏面に当接せしめることで前記マスク２を前記基板１の表面側に磁気的に吸着保持し得るように構成し、この磁石部３と当接することでこの磁石部３による前記マスク２の吸着保持力を減少させる磁束誘導体４をこの磁石部３の前記基板１の裏面と対向する一面側とは反対側の他面側に対し接離自在に設けたものである。   The present embodiment is a mask holding device that holds and holds a mask 2 (a metal mask containing nickel or the like as a magnetic material) by a magnet unit 3 on the surface side of a substrate 1 (glass substrate) on which a film forming process is performed. The magnet portion 3 is provided so as to be able to contact with and separate from the back surface of the substrate 1 and is brought into contact with the back surface of the substrate 1 so that the mask 2 can be magnetically attracted and held on the front surface side of the substrate 1. The magnetic flux derivative 4 that reduces the adsorption holding force of the mask 2 by the magnet unit 3 by being in contact with the magnet unit 3 is opposite to the one surface side of the magnet unit 3 facing the back surface of the substrate 1. It is provided so as to be able to contact with and separate from the other surface side.

具体的には、本実施例は、図５，６に図示したような原理を用いて磁石部３によるマスク２の吸着保持力を可変するものである。   Specifically, in this embodiment, the suction holding force of the mask 2 by the magnet unit 3 is varied using the principle shown in FIGS.

即ち、基板Ａの表面にマスクＢを重合した状態で、基板Ａの裏面に磁石Ｃを配置すると、磁石Ｃから生じる磁束はマスクＢを通って磁石Ｃに戻り、図５に図示したように、磁石ＣとマスクＢとの間に磁束経路が形成される。従って、磁石ＣによりマスクＢは基板Ａ表面に吸着保持される。   That is, when the magnet C is arranged on the back surface of the substrate A in a state where the mask B is superposed on the surface of the substrate A, the magnetic flux generated from the magnet C returns to the magnet C through the mask B, as shown in FIG. A magnetic flux path is formed between the magnet C and the mask B. Therefore, the mask B is attracted and held on the surface of the substrate A by the magnet C.

ここで、例えば、マスクＢより透磁率が高い物質、例えば鉄Ｅ（軟鉄）を連設して成る磁束誘導体Ｄを磁石Ｃに被嵌すると、磁束はより通り易い磁束誘導体Ｄ側を通過し、図６に図示したように磁石Ｃと磁束誘導体Ｄとの間に磁束経路が形成されることになり、マスクＢと磁石Ｃとの間の吸引力は弱まり、基板Ａの裏面から簡単に引き剥がすことが可能となる。尚、磁束誘導体Ｄの透磁率がマスクＢと同程度であっても磁束が分磁されることで、マスクＢと磁石Ｃとの間の吸引力は弱まるが、より高い効果を得るために磁束誘導体Ｄを構成する物質としてはマスクＢより透磁率が高いものを用いるのが望ましい。図中、符号Ｆは非磁性体から成る介在体である。   Here, for example, when a magnetic flux derivative D formed by connecting a substance having a higher magnetic permeability than the mask B, for example, iron E (soft iron), is fitted to the magnet C, the magnetic flux passes through the magnetic flux derivative D side, which is easier to pass through, As shown in FIG. 6, a magnetic flux path is formed between the magnet C and the magnetic flux derivative D, and the attractive force between the mask B and the magnet C is weakened and easily peeled off from the back surface of the substrate A. It becomes possible. Even if the magnetic permeability of the magnetic flux derivative D is approximately the same as that of the mask B, the magnetic flux is divided so that the attractive force between the mask B and the magnet C is weakened. As the material constituting the derivative D, it is desirable to use a material having a higher magnetic permeability than the mask B. In the figure, symbol F is an intervening body made of a non-magnetic material.

即ち、本実施例は、磁束誘導体４が当接せしめられて前記マスク２の吸着保持力が減少した前記磁石部３を、前記マスク２が重合せしめられる前記基板１の裏面に当接せしめて、前記磁束誘導体４をこの磁石部３から離反せしめることで、この磁石部３による前記マスク２の吸着保持力を増大せしめてこのマスク２を基板１の表面側に吸着保持し得るように構成すると共に、この基板１の裏面に当接状態に設けられ、前記マスク２を基板１の表面に密着せしめている磁石部３に磁束誘導体４を当接せしめることで、前記マスク２の吸着保持力を減少させて、この磁石部３を基板１の裏面から容易に引き剥がせるように構成している。   That is, in this embodiment, the magnetic part 3 whose magnetic holding force is reduced by the magnetic flux derivative 4 being brought into contact with the back surface of the substrate 1 on which the mask 2 is superposed, The magnetic flux derivative 4 is separated from the magnet portion 3 to increase the suction holding force of the mask 2 by the magnet portion 3 so that the mask 2 can be sucked and held on the surface side of the substrate 1. The attracting and holding force of the mask 2 is reduced by bringing the magnetic flux derivative 4 into contact with the magnet portion 3 that is provided in contact with the back surface of the substrate 1 and is in close contact with the surface of the substrate 1. Thus, the magnet portion 3 is configured to be easily peeled off from the back surface of the substrate 1.

磁石部３は、基板１の裏面に当接する薄板状の基体５（ベースプレート）と、この基体５上に複数凸設状態に配設される磁石６とで構成し、前記磁束誘導体４に、この磁石６が嵌合配設される凹部７を設けて、この磁束誘導体４を前記磁石部３に当接せしめた際、この凹部７に前記磁石６が嵌合配設されるように構成している。   The magnet portion 3 is composed of a thin plate-like base 5 (base plate) that comes into contact with the back surface of the substrate 1 and a plurality of magnets 6 arranged on the base 5 in a projecting state. A concave portion 7 in which the magnet 6 is fitted and disposed is provided, and when the magnetic flux derivative 4 is brought into contact with the magnet portion 3, the magnet 6 is fitted and disposed in the concave portion 7. Yes.

具体的には、ベースプレートは非磁性の例えばステンレス製とし、マスク２を吸着保持する際、所望の素子パターンに合わせて開口部が形成されたマスク２の枠部に沿って前記磁石６を配設している。また、磁石６としては、前後方向若しくは左右方向またはその双方に並設する棒状のものが好ましいが、同様の効果をもたらす範囲であれば、円型，丸型，環状型，馬蹄型の磁石あるいは必要部に凸設したボンド磁石などを採用しても良い。   Specifically, the base plate is made of non-magnetic material such as stainless steel, and when the mask 2 is held by suction, the magnet 6 is disposed along the frame portion of the mask 2 in which an opening is formed in accordance with a desired element pattern. is doing. Further, the magnet 6 is preferably a rod-shaped magnet arranged side by side in the front-rear direction, the left-right direction, or both, but a circular, round, annular, horseshoe-shaped magnet or the like as long as it provides the same effect. You may employ | adopt the bond magnet etc. which protruded in the required part.

磁束誘導体４は、マスク２より高い透磁率を有する例えば軟鉄製であり、磁石部３に当接せしめる際、磁石部３の各磁石６を夫々被嵌し得るこの磁石６の断面形状（上面及び側面の外周形状）に沿った凹部７を多数並設状態に設けている。この凹部７は磁石６に合わせて前後方向若しくは左右方向またはその双方に並設する。   The magnetic flux derivative 4 is made of, for example, soft iron having a magnetic permeability higher than that of the mask 2. When the magnetic flux derivative 4 is brought into contact with the magnet portion 3, the cross-sectional shape (upper surface and A large number of recesses 7 along the outer peripheral shape of the side surface are provided in parallel. The recesses 7 are arranged in parallel in the front-rear direction, the left-right direction, or both according to the magnet 6.

従って、各凹部７により、一層効率的に各磁石６の磁束を磁束誘導体４へと誘導することができ、磁束誘導体４を磁石部３に被嵌当接せしめた際、磁石部３によるマスク２の吸着保持力を極めて小さくすることが可能となる。   Therefore, the magnetic flux of each magnet 6 can be more efficiently guided to the magnetic flux derivative 4 by the respective concave portions 7, and when the magnetic flux derivative 4 is fitted and brought into contact with the magnet portion 3, the mask 2 by the magnet portion 3 is used. It becomes possible to make the adsorption holding power of the extremely small.

また、磁束誘導体４には、磁石部３に対し磁束誘導体４を接離する際にこの磁石部３を基板１の裏面に押さえ付ける押付体８が挿通する挿通部９を設け、この挿通部９を挿通する前記押付体８が前記磁束誘導体４の接離動をガイドし得るように構成している。   Further, the magnetic flux derivative 4 is provided with an insertion portion 9 through which a pressing body 8 that presses the magnet portion 3 against the back surface of the substrate 1 when the magnetic flux derivative 4 is brought into contact with and separated from the magnet portion 3 is inserted. The pressing body 8 through which the magnetic flux derivative 4 is inserted can guide the contact and separation of the magnetic flux derivative 4.

具体的には、磁束誘導体４には、貫通状態にピン孔を一若しくは複数穿設し、このピン孔から磁石部３を押さえ付けて磁束誘導体４を磁石部３から離脱せしめる際の磁石部３の跳ね上げを阻止する押付体８としての押付ピンを挿通し得るように構成している。本実施例においては、ピン孔は一つ設けた構成であるが、複数設けた場合には、磁石部３の跳ね上げを一層良好に阻止できることになる。   Specifically, one or a plurality of pin holes are formed in the magnetic flux derivative 4 in a penetrating state, and the magnet part 3 when the magnetic flux derivative 4 is released from the magnet part 3 by pressing the magnet part 3 from the pin hole. It is comprised so that the pressing pin as the pressing body 8 which blocks | raises up can be inserted. In the present embodiment, one pin hole is provided. However, when a plurality of pin holes are provided, the spring-up of the magnet portion 3 can be more effectively prevented.

また、このピン孔の径は、押付ピンが磁束誘導体４の接離動をガイドし得る径に設定している。従って、このピン孔を挿通する押付ピンに沿って磁束誘導体４を接離動することが可能となり、押付ピンの位置を適正に設定することにより、磁束誘導体４の位置も適正とすることができる。   The diameter of the pin hole is set to a diameter that allows the pressing pin to guide the contact and separation of the magnetic flux derivative 4. Accordingly, the magnetic flux derivative 4 can be moved toward and away from the pressing pin that passes through the pin hole, and the position of the magnetic flux derivative 4 can be made appropriate by appropriately setting the position of the pressing pin. .

また、この押付ピンをより簡易に且つ精密に位置決めするために、磁石部３の磁石６上に、この押付ピンの先端が当接するテーパー状の凹部を設けても良い。   In addition, in order to position the pressing pin more easily and precisely, a tapered concave portion with which the tip of the pressing pin abuts may be provided on the magnet 6 of the magnet portion 3.

本実施例の作動について具体的に説明する。   The operation of this embodiment will be specifically described.

マスク２を吸着保持する際には、図３に図示したように、マスク保持部10（リフターピン）を上昇させてマスクを基板に重合せしめた後((ａ)→(ｂ))、磁束誘導体４が被嵌当接せしめられた磁石部３を基板１の裏面に当接せしめ((ｂ)→(ｃ))、押付ピンにより磁石部３を押さえ付け((ｃ)→(ｄ))、この押付ピンに沿って磁束誘導体４を上昇させて磁石部３から離脱せしめ((ｄ)→(ｅ))、押付ピンを離脱せしめ((ｅ)→(ｆ))、マスク２，基板１及び磁石部３が重合し、マスク２が磁石部３により基板１表面に密着せしめられた状態を作出する。   When the mask 2 is held by suction, as shown in FIG. 3, after the mask holding portion 10 (lifter pin) is raised and the mask is superposed on the substrate ((a) → (b)), the magnetic flux derivative 4 is brought into contact with the back surface of the substrate 1 ((b) → (c)), and the magnet part 3 is pressed by a pressing pin ((c) → (d)), The magnetic flux derivative 4 is raised along the pressing pin and separated from the magnet portion 3 ((d) → (e)), the pressing pin is separated ((e) → (f)), the mask 2, the substrate 1 and The magnet part 3 is superposed, and the mask 2 is made to adhere to the surface of the substrate 1 by the magnet part 3.

一方、マスク２を離脱する際には、図４に図示したように、マスク保持部10を上昇させてマスク２を保持しつつ押付ピンをピン孔に挿通せしめ((ａ)→(ｂ))、この押付ピンに沿って磁束誘導体４を降下させて磁石部３に被嵌当接せしめ((ｂ)→(ｃ))、押付ピンをピン孔から抜き((ｃ)→(ｄ))、この磁石部３と磁束誘導体４とを一体的に上昇させて基板１の裏面から離脱せしめ((ｄ)→(ｅ))、マスク保持部を降下させてマスク２を基板１の表面から離脱せしめる((ｅ)→(ｆ))。尚、図中、符号11は基板保持部（リフターピン）である。   On the other hand, when detaching the mask 2, as shown in FIG. 4, the mask holding part 10 is raised and the pressing pin is inserted into the pin hole while holding the mask 2 ((a) → (b)). Then, the magnetic flux derivative 4 is lowered along the pressing pin so as to be fitted and contacted with the magnet portion 3 ((b) → (c)), and the pressing pin is removed from the pin hole ((c) → (d)), The magnet part 3 and the magnetic flux derivative 4 are integrally raised and separated from the back surface of the substrate 1 ((d) → (e)), and the mask holding part is lowered to remove the mask 2 from the surface of the substrate 1. ((e) → (f)). In the figure, reference numeral 11 denotes a substrate holding part (lifter pin).

従って、磁石部３を基板１の裏面から離脱させる際には、磁石部３から生じる磁束はほとんどが磁束誘導体４を通過してマスク２との間の吸引力は極めて小さく、よって、容易に基板１の裏面から磁石部３を離脱させることが可能となる。   Therefore, when the magnet unit 3 is separated from the back surface of the substrate 1, most of the magnetic flux generated from the magnet unit 3 passes through the magnetic flux derivative 4 and the attractive force between the mask 2 and the mask 2 is very small. It becomes possible to detach the magnet part 3 from the back surface of 1.

本実施例は上述のように構成したから、表面側にマスク２が重合された基板１の裏面に磁石部３を当接せしめると、磁石部３から生じる磁束は、この基板１（ガラス基板）を介してマスク２（メタルマスク）を通過する（そして磁石部３に戻る）ことで、この磁石部３とマスク２との間に吸引力が生じ、マスク２は基板１の表面に吸着保持される。   Since the present embodiment is configured as described above, when the magnet portion 3 is brought into contact with the back surface of the substrate 1 on which the mask 2 is superposed on the front surface side, the magnetic flux generated from the magnet portion 3 is the substrate 1 (glass substrate). By passing through the mask 2 (metal mask) via the back (and returning to the magnet portion 3), an attractive force is generated between the magnet portion 3 and the mask 2, and the mask 2 is attracted and held on the surface of the substrate 1. The

この際、磁石部３にマスク２より高透磁率の材料で形成した磁束誘導体４を当接せしめると、マスク２を通過していた磁石部３から生じる磁束の少なくとも一部が、このマスク２を迂回するように磁束誘導体４内を通過する（そして磁石部３に戻る）ことになり、マスク２を通過する磁束が減少することで、マスク２と磁石部３との間に生じる吸引力が減少し、磁石部３によるマスク２の吸着保持力が減少する。   At this time, when a magnetic flux derivative 4 made of a material having a higher magnetic permeability than the mask 2 is brought into contact with the magnet portion 3, at least a part of the magnetic flux generated from the magnet portion 3 that has passed through the mask 2 causes the mask 2 to pass. Passing through the magnetic flux derivative 4 so as to bypass (and returning to the magnet unit 3), and the magnetic flux passing through the mask 2 is reduced, so that the attractive force generated between the mask 2 and the magnet unit 3 is reduced. As a result, the holding force of the mask 2 by the magnet unit 3 is reduced.

従って、本実施例によれば、磁束誘導体４が当接せしめられた磁石部３を基板１の裏面に当接せしめると共に基板１とマスク２とを重合せしめ、磁束誘導体４を磁石部３から離反せしめることでこの磁石部３によるマスク２の吸着保持力を増大せしめて基板１の表面にマスク２を吸着保持した後、この磁石部３に、磁束誘導体４を当接せしめてこの磁石部３によるマスク２の吸着保持力を減少させて、このマスク２を基板１の表面から離脱せしめることが可能となる。   Therefore, according to the present embodiment, the magnet part 3 against which the magnetic flux derivative 4 is brought into contact is brought into contact with the back surface of the substrate 1 and the substrate 1 and the mask 2 are superposed to separate the magnetic flux derivative 4 from the magnet part 3. By increasing the suction force of the mask 2 by the magnet unit 3 and holding the mask 2 on the surface of the substrate 1, the magnetic flux derivative 4 is brought into contact with the magnet unit 3 and the magnet unit 3 By reducing the suction holding force of the mask 2, the mask 2 can be detached from the surface of the substrate 1.

即ち、磁束誘導体４を当接せしめて磁石部３によるマスク２の吸着保持力を減少させた状態でこの磁石部３を基板１の裏面から離脱させることができるから、それだけ磁石部３を基板１の裏面から引き剥がす力は小さくて済み、磁石部３を基板１の裏面から離脱せしめることでマスク２を基板１の表面から簡単に離脱させることができる。よって、この引き剥がしの際に基板１が微動することに起因する基板１の表面に形成された素子の損傷等を防止できることになる。   That is, the magnet part 3 can be detached from the back surface of the substrate 1 in a state where the magnetic flux derivative 4 is brought into contact with the magnet part 3 to reduce the holding force of the mask 2, so that the magnet part 3 is attached to the substrate 1 as much as possible. The force to be peeled off from the back surface of the substrate 1 is small, and the mask 2 can be easily detached from the surface of the substrate 1 by separating the magnet portion 3 from the back surface of the substrate 1. Therefore, it is possible to prevent damage or the like of elements formed on the surface of the substrate 1 due to the slight movement of the substrate 1 at the time of peeling.

また、磁石部３を基板１の裏面から強い力で引き剥がす必要がないため、処理室毎にシャフトで固定した状態とする必要がなく、磁石部３は処理室とは独立して利用可能となる。従って、例えば、クラスター型やインライン型の成膜装置のアライメント室にて一度基板１にマスク２を磁石部３により吸着保持したら（同一パターンの成膜であれば）、磁石部３を基板１の裏面に設けた状態のまま他の処理室に搬送することができ、各処理室に搬送する度に一々基板１とマスク２とのアライメントを行う必要なく次々に各処理室にて処理を行うことが可能となり、タクトタイムを極めて短縮可能となる。また、各処理室毎にアライメント機構を設ける必要がなく、大幅に装置コストを低減できる。   Moreover, since it is not necessary to peel off the magnet part 3 from the back surface of the board | substrate 1 with strong force, it is not necessary to make it the state fixed with the shaft for every process chamber, and the magnet part 3 can be utilized independently of a process chamber. Become. Therefore, for example, once the mask 2 is attracted and held on the substrate 1 by the magnet unit 3 in the alignment chamber of the cluster type or in-line type film forming apparatus (if the film has the same pattern), the magnet unit 3 is attached to the substrate 1. The substrate 1 can be transferred to another processing chamber while being provided on the back surface, and each substrate is processed one after another without having to align the substrate 1 and the mask 2 each time the substrate is transferred to each processing chamber. The tact time can be extremely shortened. Further, it is not necessary to provide an alignment mechanism for each processing chamber, and the apparatus cost can be greatly reduced.

従って、本実施例は、極めて簡単な構造で磁石部によるマスクの吸着保持力を増減することを可能とし、基板表面の素子が損傷を受けることなくマスクの着脱を行うことができ、それだけ強力な磁石部により基板表面にマスクをより密着させることが可能で、より精細な素子パターンの成膜が可能となり、更に、磁石部を処理室とは独立して利用可能となる等、極めて実用性に秀れたものとなる。   Therefore, this embodiment makes it possible to increase / decrease the attraction / holding force of the mask by the magnet portion with an extremely simple structure, and to attach / detach the mask without damaging the elements on the surface of the substrate. It is possible to make the mask closer to the substrate surface by the magnet part, it is possible to form a finer element pattern, and the magnet part can be used independently of the processing chamber. It will be excellent.

本発明は、本実施例に限られるものではなく、各構成要件の具体的構成は適宜設計し得るものである。   The present invention is not limited to this embodiment, and the specific configuration of each component can be designed as appropriate.

従来例のマスク装着時の概略説明図である。It is a schematic explanatory drawing at the time of mask mounting of the conventional example. 従来例のマスク離脱時の概略説明図である。It is a schematic explanatory drawing at the time of mask removal of a conventional example. 本実施例のマスク装着時の概略説明図である。It is a schematic explanatory drawing at the time of mask wearing of a present Example. 本実施例のマスク離脱時の概略説明図である。It is a schematic explanatory drawing at the time of mask removal of a present Example. 本実施例の概略説明図である。It is a schematic explanatory drawing of a present Example. 本実施例の概略説明図である。It is a schematic explanatory drawing of a present Example.

１ 基板
２ マスク
３ 磁石部
４ 磁束誘導体
５ 基体
６ 磁石
７ 凹部
８ 押付体
９ 挿通部 DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Mask 3 Magnet part 4 Magnetic flux derivative 5 Base | substrate 6 Magnet 7 Recessed part 8 Pushing body 9 Insertion part

Claims (5)

成膜処理が施される基板の表面側にマスクを磁石部により吸着保持するマスク保持装置であって、この磁石部は、前記基板の裏面に対し接離自在に設けて、前記基板の裏面に当接若しくは近接せしめることで前記マスクを前記基板の表面側に磁気的に吸着保持し得るように構成し、この磁石部と当接若しくは近接することでこの磁石部による前記マスクの吸着保持力を減少させる磁束誘導体を前記磁石部の前記基板の裏面と対向する一面側とは反対側の他面側に対し接離自在に設けたことを特徴とするマスク保持装置。 A mask holding device for attracting and holding a mask by a magnet unit on the surface side of a substrate on which a film forming process is performed, the magnet unit being provided so as to be able to contact and separate from the back surface of the substrate, The mask is configured to be magnetically attracted and held on the surface side of the substrate by abutting or approaching the mask, and the attracting / holding force of the mask by the magnet is achieved by abutting or approaching the magnet. A mask holding device, wherein a magnetic flux derivative to be reduced is provided so as to be freely contacted and separated with respect to the other surface side opposite to the one surface facing the back surface of the substrate of the magnet portion . 前記磁束誘導体が当接若しくは近接せしめられて前記マスクの吸着保持力が減少せしめられた前記磁石部を、前記マスクが重合せしめられる前記基板の裏面に当接若しくは近接せしめて、前記磁束誘導体をこの磁石部から離反せしめることで、この磁石部による前記マスクの吸着保持力を増大せしめてこのマスクを前記基板の表面側に吸着保持し得るように構成すると共に、この基板の裏面に当接若しくは近接せしめられこの基板の表面にマスクを吸着保持する前記磁石部に、前記磁束誘導体を当接若しくは近接せしめてこの磁石部によるマスクの吸着保持力を減少させて、このマスクを前記基板の表面から離脱せしめ得るように構成したことを特徴とする請求項１記載のマスク保持装置。   The magnetic flux derivative is brought into contact with or in close proximity to reduce the suction holding force of the mask, and the magnet portion is brought into contact with or in close proximity to the back surface of the substrate on which the mask is superposed. By separating the magnet from the magnet portion, the suction holding force of the mask by the magnet portion is increased so that the mask can be sucked and held on the front surface side of the substrate, and the back surface of the substrate is brought into contact with or close to the back surface. The magnetic force derivative is brought into contact with or brought close to the magnet portion that holds the mask onto the surface of the substrate that has been damped to reduce the holding force of the mask by the magnet portion, and the mask is detached from the surface of the substrate. 2. The mask holding device according to claim 1, wherein the mask holding device is configured to be capable of being squeezed. 前記磁石部は、前記基板の裏面に当接若しくは近接する基体と、この基体上に複数凸設状態に配設される磁石とで構成し、前記磁束誘導体に、この磁石が嵌合配設される凹部を設けて、この磁束誘導体を前記磁石部に当接若しくは近接せしめた際、この凹部に前記磁石が嵌合配設されるように構成したことを特徴とする請求項１，２のいずれか１項に記載のマスク保持装置。 The magnet portion is composed of a base that is in contact with or close to the back surface of the substrate, and a plurality of magnets arranged in a protruding manner on the base, and the magnet is fitted and disposed on the magnetic flux derivative. 3. The structure according to claim 1 , wherein when the magnetic flux derivative is brought into contact with or close to the magnet portion, the magnet is fitted and disposed in the recess. The mask holding device according to claim 1. 前記磁束誘導体に、前記磁石部に対し磁束誘導体を接離する際にこの磁石部を基板の裏面に押さえ付ける押付体が挿通する挿通部を設け、この挿通部を挿通する前記押付体が前記磁束誘導体の接離動をガイドし得るように構成したことを特徴とする請求項１〜３のいずれか１項に記載のマスク保持装置。 The magnetic flux derivative is provided with an insertion portion through which a pressing body that presses the magnet portion against the back surface of the substrate when the magnetic flux derivative is brought into and out of contact with the magnet portion, and the pressing body that passes through the insertion portion is the magnetic flux. The mask holding device according to any one of claims 1 to 3 , wherein the mask holding device is configured to guide contact and separation of the derivative. 成膜処理が施される基板の表面側にマスクを磁石部により吸着保持するマスク保持装置であって、この磁石部は、前記基板の裏面に対し接離自在に設けて、前記基板の裏面に当接若しくは近接せしめることで前記マスクを前記基板の表面側に磁気的に吸着保持し得るように構成し、この磁石部と当接若しくは近接することでこの磁石部による前記マスクの吸着保持力を減少させる磁束誘導体を前記磁石部の前記基板の裏面と対向する一面側とは反対側の他面側に対し接離自在に設けたマスク保持装置を用い、前記磁束誘導体が当接若しくは近接せしめられた前記磁石部を前記基板の裏面に当接若しくは近接せしめると共に前記基板とマスクとを重合せしめ、前記磁束誘導体を前記磁石部から離反せしめることでこの磁石部による前記マスクの吸着保持力を増大せしめて基板の表面にマスクを吸着保持した後、この基板の裏面に当接若しくは近接せしめられこの基板の表面にマスクを吸着保持する前記磁石部に、前記磁束誘導体を当接若しくは近接せしめてこの磁石部によるマスクの吸着保持力を減少させて、このマスクを前記基板の表面から離脱せしめることを特徴とするマスク着脱方法。 A mask holding device for attracting and holding a mask by a magnet unit on the surface side of a substrate on which a film forming process is performed, the magnet unit being provided so as to be able to contact and separate from the back surface of the substrate, The mask is configured to be magnetically attracted and held on the surface side of the substrate by abutting or approaching the mask, and the attracting / holding force of the mask by the magnet is achieved by abutting or approaching the magnet. Using a mask holding device in which the magnetic flux derivative to be reduced is provided so as to be able to come into contact with and separate from the other surface side opposite to the one surface facing the back surface of the substrate of the magnet unit , the magnetic flux derivative is brought into contact with or brought close to Further, the magnet portion is brought into contact with or close to the back surface of the substrate, the substrate and the mask are superposed, and the magnetic flux derivative is separated from the magnet portion, whereby the mask portion is formed by the magnet portion. After the mask is attracted and held on the surface of the substrate by increasing the adhesion holding force, the magnetic flux derivative is brought into contact with the magnet portion that is in contact with or close to the back surface of the substrate and holds the mask on the surface of the substrate. Alternatively, the mask attaching / detaching method is characterized in that the mask is held away from the surface of the substrate by reducing the suction and holding force of the mask by the magnet portion.
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