KR20210053761A - Apparatus for forming film, and method for forming film - Google Patents

Abstract

According to the present invention, a film formation apparatus includes: a substrate support part supporting a substrate from a lower part; a substrate adsorption means having an adsorption surface adsorbing the substrate supported by the substrate support part from an upper part; and a mask suctioning means suctioning a mask located in the lower part of the substrate toward a film formation surface of the substrate, and installed opposite the mask with the substrate adsorption means laid therebetween. In the substrate adsorption means, a through part vertical to the adsorption surface is formed. In the mask suctioning means, a pressing pin is formed on a position corresponding to the through part. As the mask suctioning means is moved toward the substrate adsorption means, the back side of the substrate supported by the substrate support part can be pressed by the pressing pin penetrating the through part.

Description

Film-forming apparatus and film-forming method {APPARATUS FOR FORMING FILM, AND METHOD FOR FORMING FILM}

The present invention relates to a film forming apparatus and a film forming method.

In the manufacture of an organic EL display device (organic EL display), when forming the organic light emitting device (organic EL device; OLED) constituting the organic EL display device, a vapor deposition material evaporated from an evaporation source of the film forming device is formed into a pixel pattern. By depositing on the substrate through a mask, an organic material layer or a metal layer is formed.

In the depo-up film forming apparatus, an evaporation source is installed under a vacuum vessel of the film forming apparatus, a substrate is disposed above the vacuum vessel, and vapor deposition is performed on a lower surface of the substrate. In the vacuum container of such an upward vapor deposition system, since only the periphery of the lower surface of the substrate is held and supported by the substrate holder, the substrate is sagged by its own weight, which is one factor that degrades the deposition accuracy. Has become. Even in a film forming apparatus of a method other than the upward vapor deposition method, sagging due to the self weight of the substrate may occur.

A technique using an electrostatic chuck is being studied as a method for reducing the deflection of the substrate due to its own weight. That is, by installing the electrostatic chuck on the upper part of the substrate and adsorbing the upper surface of the substrate supported by the support part of the substrate holder to the electrostatic chuck, the central part of the substrate can be pulled by the electrostatic force of the electrostatic chuck, thereby reducing the sagging of the substrate. .

By the way, in the case of a film forming apparatus in which deposition is performed by adsorbing a substrate to an electrostatic chuck as described above, it takes time to separate the substrate from the electrostatic chuck after film formation is completed. That is, even if the adsorption voltage applied to the electrostatic chuck is turned off (or a separation voltage is applied), it takes a predetermined time until the substrate is not immediately separated from the electrostatic chuck and the polarized charge induced during adsorption is completely removed.

In addition, when adsorbing the substrate to the electrostatic chuck, as described above, the substrate holder is raised or the electrostatic chuck is lowered while the substrate holder is supported by the support portion of the substrate, and the substrate is brought close to the electrostatic chuck. An adsorption voltage is applied to the chuck, and there is a possibility that the position of the substrate may be shifted when the substrate is moved. In other words, since the substrate is simply placed on the support portion of the substrate holder and is not fixed, the position of the substrate may be shifted when it is moved close to the electrostatic chuck for adsorption or while the adsorption voltage is applied to the electrostatic chuck. There is a possibility.

An object of the present invention is to reduce the time required for separating a substrate from such a substrate adsorption means (electrostatic chuck), thereby achieving efficient operation of a film forming apparatus.

Further, an object of the present invention is to prevent the substrate from being displaced (warped) when the substrate is adsorbed by the substrate adsorbing means (electrostatic chuck).

In addition, an object of the present invention is to reduce the complexity of the device structure by making it possible to shorten the substrate separation time and prevent the position shift during substrate adsorption without additional installation of a separate driving mechanism.

A film forming apparatus according to an embodiment of the present invention includes a substrate support unit that supports a substrate from below, a substrate adsorption means having an adsorption surface for adsorbing the substrate supported by the substrate support unit from above, and is positioned below the substrate. A film forming apparatus having the mask suction means provided on a side opposite to the mask as a mask suction means for pulling the mask toward the film formation surface of the substrate, the substrate suction means interposed therebetween, wherein the substrate suction means comprises: A through part in a direction perpendicular to the suction surface is formed, a push pin is formed in a position corresponding to the through part in the mask suction unit, and the mask suction unit is moved toward the substrate suction unit to penetrate the through part. It is characterized in that it is possible to press the back surface of the substrate supported by the substrate support by the push pin.

A film formation method according to an embodiment of the present invention includes a substrate support unit supporting a substrate from below, a substrate adsorption means having an adsorption surface for adsorbing the substrate supported by the substrate support unit from above, and the substrate adsorption means. A method of depositing a vapor deposition material on a film-forming surface of the substrate through the mask using a film-forming apparatus having a mask suction means provided on a side opposite to the mask, wherein the substrate is deposited on the adsorption surface of the substrate adsorption means. Adsorbing the back surface opposite to the surface, pulling the mask by the mask suction means to adhere the mask to the film-forming surface of the substrate, and evaporating the deposition material to form the substrate through the mask. And depositing a deposition material on a surface, wherein a through portion in a direction perpendicular to the absorption surface is formed in the substrate adsorption means, and a push pin is formed at a position corresponding to the through portion in the mask suction means, In the step of adsorbing the back surface of the substrate to the adsorption surface of the substrate adsorption means, the mask suction means is moved relative to the substrate adsorption means to a position where the push pin penetrates the penetrating part, In by pressing the back surface of the substrate by the push pin, it characterized in that it assists the adsorption operation of the substrate.

Advantageous Effects of Invention According to the present invention, by shortening the time required to separate the substrate from the substrate adsorption means (electrostatic chuck), efficient operation of the film forming apparatus can be achieved.

Further, according to the present invention, when the substrate is adsorbed by the substrate adsorbing means (electrostatic chuck), it is possible to prevent the substrate from being displaced (warped).

Further, according to the present invention, it is possible to reduce the complexity of the device structure by making it possible to shorten the substrate separation time and prevent the position shift during substrate adsorption without additionally installing a driving mechanism.

1 is a schematic diagram of a part of an electronic device manufacturing apparatus.
2 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention.
Fig. 3 is a schematic diagram showing an arrangement relationship between a substrate adsorption means (electrostatic chuck) and a mask suction means (magnet plate) according to an embodiment of the present invention.
FIG. 4 is a process diagram showing a series of steps of adsorbing a substrate to an electrostatic chuck, adhering a mask to the substrate, and sequentially separating the mask from the substrate after film formation is completed, according to an embodiment of the present invention.
5 is a diagram showing a configuration according to another embodiment of the present invention regarding the arrangement of a push pin and a through hole.
6 is a process chart showing a step of adsorbing a substrate to an electrostatic chuck according to another embodiment of the present invention.
7 is a schematic diagram showing an electronic device.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In addition, in the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, size, material, shape, etc. are intended to limit the scope of the present invention to this, unless specifically stated otherwise. no.

The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to perform film formation, and can be preferably applied to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum evaporation. As the material of the substrate, any material such as glass, a film made of a polymer material, a silicon wafer, or a metal can be selected. For example, the substrate may be a substrate in which a film such as polyimide is laminated on a glass substrate. Further, as the evaporation material, an arbitrary material such as an organic material and a metallic material (metal, metal oxide, etc.) can be selected. In addition to the vacuum vapor deposition apparatus described in the following description, the present invention can also be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus. The technology of the present invention is specifically applicable to manufacturing apparatuses such as organic electronic devices (eg, organic light-emitting elements and thin-film solar cells) and optical members. Among them, an apparatus for manufacturing an organic light-emitting device, which forms an organic light-emitting device by evaporating a vapor deposition material and evaporating it on a substrate through a mask, is one of the preferred application examples of the present invention.

<Electronic device manufacturing apparatus>

1 is a plan view schematically showing a configuration of a part of an electronic device manufacturing apparatus.

The manufacturing apparatus of Fig. 1 is used for manufacturing a display panel of an organic EL display device for a smartphone or an organic EL display device for a VR HMD, for example. In the case of a display panel for a smartphone, for example, a 4.5 generation substrate (about 700 mm × about 900 mm), a 6 generation full size (about 1500 mm × about 1850 mm) or a half cut size (about 1500 mm × about 900 mm) After forming a film for formation of an organic EL element on a substrate of about 925 mm), the substrate is cut out and formed into a plurality of small-sized panels. In the case of a display panel for a VR HMD, for example, after forming a film for formation of an organic EL element on a silicon wafer of a predetermined size (e.g., 300 mm), a region (scribe region) between the element formation regions is formed. Accordingly, the silicon wafer is cut out and manufactured into a plurality of small-sized panels.

The electronic device manufacturing apparatus generally includes a plurality of cluster devices 1 and a relay device that connects the cluster devices 1.

The cluster device 1 includes a plurality of film forming apparatuses 11 that perform a process (e.g., film formation) on a substrate S, a plurality of mask stock apparatuses 12 that accommodate a mask M before and after use, and A transfer chamber 13 disposed in the center is provided. The transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and mask stock apparatuses 12 as shown in FIG. 1.

In the transfer chamber 13, a transfer robot 14 that transfers a substrate and a mask is disposed. The transfer robot 14 transfers the substrate S to the film forming apparatus 11 from the pass chamber 15 of the relay apparatus arranged on the upstream side. Further, the transport robot 14 transports the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 may be, for example, a robot having a structure in which a robot hand that holds a substrate S or a mask M is mounted on an articulated arm.

In the film forming apparatus 11 (also referred to as an evaporation apparatus), the evaporation material stored in the evaporation source is heated by a heater, evaporated, and deposited on a substrate through a mask. Transfer of the substrate S with the transfer robot 14, adjustment (alignment) of the relative position of the substrate S and the mask M, fixation of the substrate S onto the mask M, and film formation (deposition) ) And the like are performed by the film forming apparatus 11.

In the mask stock apparatus 12, a new mask and a used mask to be used in the film forming process in the film forming apparatus 11 are divided into two cassettes and accommodated. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask stock apparatus 12, and transfers a new mask stored in the other cassette of the mask stock apparatus 12 to the film forming apparatus 11 Return to.

In the cluster device 1, a pass chamber 15 for transferring the substrate S from the upstream side in the flow direction of the substrate S to the cluster device 1, and a film forming process in the cluster device 1 are completed. A buffer chamber 16 for transferring the substrate S to another cluster device on the downstream side is connected. The transfer robot 14 of the transfer chamber 13 receives the substrate S from the pass chamber 15 on the upstream side, and one of the film forming apparatuses 11 in the cluster apparatus 1 (e.g., the film forming apparatus 11a) ) To return. In addition, the transfer robot 14 receives the substrate S on which the film formation process in the cluster device 1 has been completed, from one of the plurality of film formation devices 11 (e.g., the film formation device 11b), and is connected to the downstream side. It is conveyed to the buffer chamber 16.

A turning chamber 17 is provided between the buffer chamber 16 and the pass chamber 15 to change the direction of the substrate. A transfer robot 18 is installed in the turning chamber 17 to receive the substrate S from the buffer chamber 16, rotate the substrate S by 180 degrees, and transfer it to the pass chamber 15. In this way, the direction of the substrate S in the upstream cluster device and the downstream cluster device becomes the same, thereby facilitating substrate processing.

The pass chamber 15, the buffer chamber 16, and the turning chamber 17 are so-called relay devices that connect cluster devices, and the relay devices installed on the upstream side and/or downstream side of the cluster device include the pass chamber and the buffer chamber. And at least one of the turning rooms.

The film forming apparatus 11, the mask stock apparatus 12, the transfer chamber 13, the buffer chamber 16, the turning chamber 17, and the like are maintained in a high vacuum state during the manufacturing process of the organic light emitting element. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In this embodiment, the configuration of an electronic device manufacturing apparatus has been described with reference to FIG. 1, but the present invention is not limited thereto, and other types of apparatuses or chambers may be provided, and arrangements between these apparatuses or chambers may vary. have. For example, the electronic device manufacturing apparatus according to an embodiment of the present invention may be of an in-line type instead of the cluster type shown in FIG. 1. That is, it may have a configuration in which a substrate and a mask are mounted on a carrier, and film formation is performed while transporting the inside of a plurality of film forming apparatuses arranged in a row. In addition, it may have a structure in which a cluster type and an inline type are combined. For example, the formation of the organic layer may be performed in a cluster-type manufacturing apparatus, and the electrode layer (cathode layer) forming process, a sealing process, a cutting process, and the like may be performed in an in-line type manufacturing apparatus.

Hereinafter, a specific configuration of the film forming apparatus 11 will be described.

<Film-forming device>

2 is a schematic diagram showing the configuration of the film forming apparatus 11. In the following description, an XYZ rectangular coordinate system in which the vertical direction is the Z direction and the horizontal plane is the XY plane is used. In addition, the rotation angle around the Z axis is expressed as θ.

The film forming apparatus 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 installed in the vacuum container 21, a mask support unit 23, and , An electrostatic chuck 24, and an evaporation source 25.

The substrate support unit 22 is a means for receiving and holding the substrate S transferred by the transfer robot 14 installed in the transfer chamber 13, and is also referred to as a substrate holder. The substrate support unit 22 includes a support portion 221 that supports a peripheral portion of a lower surface of the substrate. A fluorine-coated pad (not shown) may be installed on the support to prevent damage to the substrate.

A mask support unit 23 is installed under the substrate support unit 22. The mask holding unit 23 is a means for receiving and holding the mask M carried by the transport robot 14 installed in the transport chamber 13, and is also referred to as a mask holder.

The mask M has an opening pattern corresponding to a thin film pattern to be formed on the substrate S, and is mounted on the mask support unit 23. In particular, a mask used to manufacture an organic EL device for a smartphone is a metal mask in which a fine opening pattern is formed, and is also referred to as a Fine Metal Mask (FMM).

Above the substrate support unit 22, an electrostatic chuck 24 (substrate adsorption means) for adsorbing and fixing the substrate by electrostatic attraction is installed. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (eg, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Rabeck force type electrostatic chuck, or a gradient force type electrostatic chuck.

It is preferable that the electrostatic chuck 24 is a gradient force type electrostatic chuck. By making the electrostatic chuck 24 a gradient type electrostatic chuck, even when the substrate S is an insulating substrate, it can be favorably adsorbed by the electrostatic chuck 24. When the electrostatic chuck 24 is a Coulomb-force type electrostatic chuck, when positive (+) and negative (-) potentials are applied to the metal electrode, the metal electrode and the metal electrode are applied to the adherend such as the substrate S through the dielectric matrix. Polarization charges of opposite polarity are induced, and the substrate S is adsorbed and fixed to the electrostatic chuck 24 by the electrostatic attraction therebetween.

The electrostatic chuck 24 may be formed as a single plate or may be formed to have a plurality of sub-plates. In addition, even when formed as a single plate, a plurality of electric circuits may be included therein, and the electrostatic manpower may be controlled to be different depending on the position within the single plate. In addition, the electrostatic chuck 24 may be controlled so that the front surface of the electrostatic chuck 24 is the same regardless of the position, whether formed of a single plate or a plurality of plates.

On the top of the electrostatic chuck 24, a magnet plate 30 is installed as a mask suction means for preventing sagging of the mask by applying a magnetic force to the metal mask M and bringing the mask M and the substrate S in close contact with each other. The magnet plate 30 may be made of a permanent magnet or an electromagnet, and may be divided into a plurality of modules.

In the present embodiment, as described later, prior to film formation, the substrate S placed on the lower side in the vertical direction of the electrostatic chuck 24 is first adsorbed and held by the electrostatic chuck 24, and in this state, the substrate S and the mask The relative position of (M) is adjusted, and after the relative position of the substrate (S) and the mask (M) is adjusted, the mask suction means installed on the side opposite to the substrate suction surface (substrate support surface) of the electrostatic chuck 24 is used. The magnet plate 30 is lowered toward the electrostatic chuck 24 to pull the mask M over the substrate S, so that the substrate S and the mask M are brought into close contact with each other. In this way, after the substrate S and the mask M are in close contact, the film formation process is started, and after the film formation is performed, the mask is first separated through a substantially opposite process, and then the substrate (S) body) is removed. It is peeled off from the electrostatic chuck 24. Details of adsorption and separation of the substrate S and the mask M will be described later with reference to FIGS. 4 to 6.

Although not shown in FIG. 2, by installing a cooling mechanism (eg, a cooling plate) to suppress the temperature increase of the substrate S on the side opposite to the adsorption surface of the electrostatic chuck 24, the organic material deposited on the substrate S It may be configured to suppress material deterioration or deterioration, and this cooling plate may be formed integrally with the magnet plate 30.

The evaporation source 25 is a crucible (not shown) in which the evaporation material to be deposited on the substrate is accommodated, a heater (not shown) for heating the crucible, and prevents the evaporation material from scattering onto the substrate until the evaporation rate from the evaporation source becomes constant. It includes a shutter (not shown) and the like. The evaporation source 25 may have various configurations depending on a use, such as a point evaporation source or a linear evaporation source.

Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculating unit (not shown) for measuring the film thickness deposited on the substrate.

On the upper outside (atmospheric side) of the vacuum container 21, a substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a magnet plate Z actuator 31, a positioning mechanism 29, etc. Is installed. These actuators and position adjusting devices are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving means for lifting the substrate support unit 22 (moving in the Z direction). The mask Z actuator 27 is a driving means for raising and lowering the mask support unit 23 (moving in the Z direction). The electrostatic chuck Z actuator 28 is a driving means for lifting the electrostatic chuck 24 (moving in the Z direction). The magnet plate Z actuator 31 is a driving means for lifting the magnet plate 30 (moving in the Z direction).

The position adjusting mechanism 29 is a driving means for aligning the electrostatic chuck 24. The position adjusting mechanism 29 moves the entire electrostatic chuck 24 with respect to the substrate support unit 22 and the mask support unit 23 in the X direction, the Y direction, and the θ rotation. In the present embodiment, alignment of adjusting the relative position of the substrate S and the mask M is performed by adjusting the position of the electrostatic chuck 24 in the XY? direction in a state in which the substrate S is adsorbed.

On the outer upper surface of the vacuum container 21, in addition to the above-described driving mechanism, an alignment camera for photographing alignment marks formed on the substrate S and the mask M through a transparent window installed on the upper surface of the vacuum container 21 ( 20) may be installed.

The alignment camera 20 installed in the film forming apparatus 11 of the present embodiment is a camera for fine alignment used to accurately adjust the relative position of the substrate S and the mask M, and its viewing angle is narrow. It is a high-resolution camera. In addition to the camera 20 for fine alignment, the film forming apparatus 11 may include a camera for rough alignment with a relatively wide viewing angle and low resolution. In this embodiment, the alignment camera 20 is provided at a position corresponding to the alignment mark formed on the substrate S and the mask M. For example, a camera for fine alignment is installed so that four cameras form four rectangular corners, and a camera for rough alignment is installed at the center of two opposite sides of the rectangle. However, the present invention is not limited thereto, and different arrangements may be made according to the positions of the alignment marks of the substrate S and the mask M.

The positioning mechanism 29 adjusts the position by relatively moving the substrate S and the mask M based on the position information of the substrate S and the mask M acquired by the alignment camera 20. Alignment is performed.

The film forming apparatus 11 includes a control unit (not shown). The control unit has functions such as transport and alignment of the substrate S, control of the evaporation source 25, and control of film formation. The control unit can be configured by, for example, a computer having a processor, memory, storage, I/O, and the like. In this case, the function of the control unit is realized by the processor executing a program stored in the memory or storage. As the computer, a general-purpose personal computer may be used, or an embedded type computer or a programmable controller (PLC) may be used. Alternatively, some or all of the functions of the control unit may be configured with a circuit such as an ASIC or an FPGA. Further, a control unit may be provided for each film forming apparatus, or one control unit may be configured to control a plurality of film forming apparatuses.

<Substrate suction means (electrostatic chuck) and mask suction means (magnet plate)>

Referring to FIG. 3, an electrostatic chuck 24 as a substrate adsorption means according to the present embodiment, and a mask suction means disposed above the electrostatic chuck 24 to pull the mask M toward the substrate S using magnetic force. The magnet plate 30 will be described.

The electrostatic chuck 24 includes an electrode part having a plurality of electrodes, which generates an electrostatic adsorption force for adsorbing an adherend (substrate S) on the adsorption surface, and the electrode part comprises a first electrode 241 forming an electrode pair. And a second electrode 242. _{The first electrode 241 refers to an electrode or a set of electrodes to which a} predetermined potential (V a) is applied under the control of a potential controller (not shown), and the second electrode 242 is attached to the first electrode 241. It refers to an electrode or a set of electrodes to which a predetermined potential (V _b ) different from the applied potential (V _{a) is applied.} In addition, the electrostatic chuck 24 may generate an electrostatic attraction force for adsorbing the substrate S by the potentials applied to the first electrode 241 and the second electrode 242, respectively.

In FIG. 3, the first electrode 241 and the second electrode 242 are shown to be alternately arranged one by one, but the present invention is not limited thereto, and the first electrode 241 and the second electrode 242 are different from each other. They may be arranged in a form (for example, alternately of two).

The alternately arranged first electrodes 241 and second electrodes 242 may have various shapes as long as they can generate an electrostatic force between the substrate S, which is an adherend. For example, the first electrode 241 and the second electrode 242 may each have a comb shape. The comb-shaped first electrode 241 and the second electrode 242 each have a plurality of comb teeth and a base to which the plurality of comb teeth are connected. The bases of each of the electrodes 241 and 242 supply electric potential to a plurality of comb teeth, and the plurality of comb teeth generate an electrostatic adsorption force between them and the substrate S. To this end, each of the comb teeth of the first electrode 241 is alternately disposed to face each of the comb teeth of the second electrode 242. In this way, by forming the comb teeth of each electrode 241, 242 facing each other and entangled with each other, the gap between electrodes to which different potentials are applied can be narrowed, a large unequal electric field is formed, and the adsorbed body is adsorbed by the gradient force. can do.

The electrostatic chuck 24 includes at least one at least one through hole 243 vertically penetrating a suction surface for adsorbing the substrate S and an opposite surface at a predetermined position. The through hole 243 is installed corresponding to the position where the push pin 301 of the magnet plate 30 to be described later is formed.

A magnet plate 30 as a mask suction means for pulling the mask M by using magnetic force toward the substrate S adsorbed by the electrostatic chuck 24 is installed on the electrostatic chuck 24. On the side of the magnet plate 30 facing the electrostatic chuck 24 (that is, the side facing the substrate S and the mask M), a position corresponding to the through hole 243 of the electrostatic chuck 24 In the case of adsorption of the substrate S to the electrostatic chuck 24 and/or separation of the substrate S from the electrostatic chuck 24, a push pin 301 is installed to assist the adsorption and/or separation operation do. 3 shows an example in which the push pin 301 and the corresponding through hole 243 are formed on the outer circumferences of the magnet plate 30 and the electrostatic chuck 24, respectively, but the push pin 301 and The formation position and number of the through holes 243 are not limited thereto and may be appropriately set. For example, as described later, when mainly used as a peeling auxiliary function, installing the push pin 301 and the through hole 243 at the center of the magnet plate 30 and the electrostatic chuck 24 makes the separation operation more efficient. There may be cases where you can assist.

Hereinafter, detailed operation of assisting the separation of the substrate S from the electrostatic chuck 24 and the adsorption of the substrate S to the electrostatic chuck 24 by the push pin 301 installed on the magnet plate 30 It will be described in turn.

<Auxiliary of substrate separation operation>

4 is a series of sequentially separating the mask and the substrate when the substrate S is adsorbed on the electrostatic chuck 24, and then the mask is in close contact with the substrate, and when the film formation process is completed, according to an embodiment of the present invention. Shows the process of.

4A is a substrate support unit 22 in the vacuum container 21; more specifically, a substrate S is placed on the support portion 221 of the substrate support unit, and a mask M is placed on the mask support unit 23, respectively. It shows the state in which it is set. Referring to FIG. 4A, the substrate S spaced apart from the electrostatic chuck 24 at a predetermined interval is also spaced apart from the mask M at a predetermined interval in a direction opposite to the direction in which the electrostatic chuck 24 is located. . In addition, no potential is applied to the first electrode 241 and the second electrode 242 of the electrostatic chuck 24, and no electrostatic force is induced in the electrostatic chuck 24.

Subsequently, as shown in FIG. 4B, the substrate support unit 22 is raised (or the electrostatic chuck 24 is lowered) to place the substrate S placed on the support portion of the substrate support unit 22 into an electrostatic chuck ( 24), and when the substrate S is sufficiently close to or in contact with the electrostatic chuck 24, a predetermined potential is applied to the first electrode 241 and the second electrode 242 of the electrostatic chuck 24 Thus, the substrate S is adsorbed to the electrostatic chuck 24 by causing an adsorption potential difference ΔV1 to be generated between the first and second electrodes. After the substrate S is adsorbed on the electrostatic chuck 24, the relative position between the substrate S and the mask M is adjusted (alignment). Although detailed illustration is omitted, it is preferable that the relative position adjustment of the substrate S and the mask M is performed in a state where the separation distance between the substrate S and the mask M is narrowed within a range in which the substrate S and the mask M do not contact. To this end, after the substrate is adsorbed, the electrostatic chuck 24 is lowered or the mask support unit 23 is raised to adjust the relative position of the substrate S and the mask M. The step of moving (M) may be additionally performed. Further, the relative position adjustment (alignment) of the substrate S and the mask M may be performed in a state in which the above-described adsorption potential difference ΔV1 is maintained as it is in the electrode portion of the electrostatic chuck 24, and the substrate adsorption is performed. After completion, the size is smaller than the above-mentioned adsorption potential difference at a predetermined time point, but the adsorption state of the substrate may still be lowered to a potential difference that can be maintained.

After adsorption of the substrate S and alignment adjustment with the mask M are finished, as shown in FIG. 4C, the magnetic force exerts the magnetic force on the mask M beyond the substrate S (second position), as shown in FIG. ) To descend. At this time, in the state in which the magnet plate 30 is lowered to the position where the mask M can be sucked, the push pin 301 installed on the magnet plate 30 is a corresponding position of the electrostatic chuck 24. It is inserted into the through hole 243 formed in and does not protrude toward the substrate adsorption surface of the electrostatic chuck 24, that is, the tip of the push pin 301 does not touch the adsorbed substrate S surface. . The length of the push pin 301 and/or the magnetic force applied to the magnet plate 30 so that the positional relationship of the push pin 301 at the lowered position of the magnet plate 30 for suction of the mask M is satisfied. You can adjust the intensity.

In this way, in a state in which the mask M is in close contact with the lower surface of the substrate S adsorbed by the electrostatic chuck 24, the evaporation material evaporated from the evaporation source 25 is deposited on the substrate S through the mask M. The formed film forming process is performed.

After the film forming process is completed, as shown in FIG. 4D, the magnet plate 30 is raised again (third position) to release the state of applying the magnetic force to the mask M, so that the mask M is transferred to the substrate S. ) From the film formation surface.

Subsequently, in a state in which the mask M is separated so that only the substrate S is adsorbed and held by the electrostatic chuck 24, the mask plate 30 is again moved toward the electrostatic chuck 24 as shown in FIG. 4E. While lowering (or raising the electrostatic chuck 24), the potential difference applied to the electrode portion of the electrostatic chuck 24 is set to a potential difference (ΔV2) capable of separating the substrate (substrate separation potential difference ΔV2 is zero (0) or substrate adsorption The polarity is opposite to the potential difference ΔV1).

That is, by applying the substrate separation potential difference ΔV2, the polarization charge induced in the substrate S is removed, and the substrate separation operation in which the substrate S is separated from the electrostatic chuck 24 proceeds. In the embodiment according to, when such a substrate separation operation is performed (after applying a substrate separation potential difference), the push pin 301 installed on the magnet plate 30 penetrates the through hole 243 of the electrostatic chuck 24 Then, by relatively moving the mask plate 30 again until it protrudes out of the substrate adsorption surface of the electrostatic chuck 24 (first position), the push pin 301 pushes the substrate adsorption surface (the opposite side of the film formation surface). It is characterized in that the substrate separation operation can be assisted by the applied force.

At this time, the push pin 301, as shown in Figure 4e, the magnet plate 30 is lowered to a position not in contact with the electrostatic chuck 24, the substrate (S) adsorbed on the opposite side suction surface. It is desirable that the length be adjusted so that it can be pushed.

As described above, in one embodiment of the present invention, a push pin 301 is formed on the magnet plate 30 provided as a mask suction means, and a function of assisting the substrate separation operation is also provided. Specifically, when separating the substrate S from the electrostatic chuck 24 after film formation is completed, the magnet plate 30 is moved toward the electrostatic chuck 24 in accordance with the application of the substrate separation potential difference to the electrostatic chuck 24. The push pins 301 are moved relative to each other to push the adsorption surface of the substrate (the surface opposite to the film-forming surface), thereby assisting the substrate separation operation.

Thereby, the substrate separation time after the film formation is completed can be shortened. In addition, by arranging the push pin 301 that assists the separation operation on the magnet plate 30 already installed as a mask suction means, there is no need to install a separate driving mechanism for lifting the push pin 301, and the magnet plate The lifting mechanism (magnet plate Z actuator 31) can be used as it is.

The installation position of the push pin 301, as described above, is not limited to the configuration of the above embodiment to be installed at the outer circumferential position of the magnet plate 30, and the center of the magnet plate 30 as shown in FIG. 5A. It may be installed in a position (central part). For example, in the case of forming a film using a silicon wafer having a diameter of 300 mm as a substrate, the wafer may be in a convex upward shape rather than a completely flat state when adsorbed by an electrostatic chuck. Therefore, in this case, as a separation aid, When installing the push pin, installing the push pin in the center of the magnet plate so that the central position of the wafer can be pressed can help the separation operation more efficiently. In addition, as shown in Fig. 5B, the push pins 301 may be provided at both the central portion and the outer circumferential position of the magnet plate 30.

In addition, in order to suppress damage to the substrate, the push pin 301 is preferably made of polyimide or Teflon. Further, a portion in direct contact with the substrate may be formed of a member having elasticity.

In addition, when the push pins 301 are installed at multiple positions of the magnet plate 30 and used as a substrate separation aid as described above, the length of each push pin may be changed, or the elasticity of the contact portion with the substrate may be changed. By setting appropriately for each push pin, for example, the substrate is connected to the push pins in the order from the center of the substrate to the outer circumference, or from the outer circumference to the center, or from one outer circumference position to the opposite outer circumference position. The timing of being pressed can also be controlled for each position of the substrate.

<Auxiliary substrate adsorption operation>

The push pin 301 provided on the magnet plate 30 can also be used in a configuration that assists the suction operation when the substrate S is sucked onto the electrostatic chuck 24.

A typical process of adsorption of a substrate using the electrostatic chuck 24 is as described in Figs. 4A to 4B described above. That is, with the electrostatic chuck 24 interposed therebetween, the substrate S and the mask M are placed on and spaced apart from the substrate support unit 22 and the mask support unit 23, respectively, on one side, and a magnet plate ( 30) is similarly spaced apart from the electrostatic chuck 24, the substrate support unit 22 is raised (or the electrostatic chuck 24 is lowered) to bring the substrate S closer to or in contact with the electrostatic chuck 24 After that, the substrate S is adsorbed to the electrostatic chuck 24 by applying an adsorption potential difference ΔV1 to the electrode portion of the electrostatic chuck 24.

In the configuration according to an embodiment of the present invention, when performing such a substrate adsorption operation, the magnet plate 30, more specifically, a push pin 301 provided on the magnet plate 30 is used as the adsorption auxiliary means.

Hereinafter, with reference to FIG. 6, a detailed operation of assisting the adsorption of the substrate S to the electrostatic chuck 24 by the push pins 301 provided on the magnet plate 30 will be described.

First, the substrate S, the mask M, and the magnet plate 30 are respectively spaced apart from each other with the electrostatic chuck 24 interposed therebetween, and an adsorption potential difference is not applied to the electrode portion of the electrostatic chuck 24. In the state (FIG. 4A), as shown in FIG. 6A, the magnet plate 30 is lowered until the push pin 301 passes through the through hole 243 of the electrostatic chuck 24 and protrudes toward the suction surface. .

Subsequently, as shown in FIG. 6B, the outer peripheral end of the substrate S placed on the support portion of the substrate support unit 22 by raising the substrate support unit 22 protrudes out of the through hole 243. Be clamped by 301.

Subsequently, as shown in FIG. 6C, while maintaining the clamped state by the support portion of the substrate support unit 22 and the push pin 301, the substrate support unit 22 and the magnet plate 30 are simultaneously raised (or The electrostatic chuck 24 is lowered), the substrate S is brought close to the electrostatic chuck 24 (the push pin 301 is retracted into the through hole 243), and the substrate S is applied to the electrostatic chuck 24. When) is sufficiently close to or in contact with the electrostatic chuck 24, an adsorption potential difference ΔV1 is applied to the substrate S to be adsorbed.

In this way, when the substrate S is adsorbed on the electrostatic chuck 24, the substrate S is clamped with the support portion of the push pin 301 and the substrate support unit 22, and the substrate S is held in the electrostatic chuck ( By approaching 24), the positional shift of the substrate S at the time of adsorption can be suppressed. That is, during the substrate adsorption process, the push pins 301 installed on the magnet plate 30 can be used as a means to assist the adsorption operation.

Thereby, the accuracy of adsorption of the substrate S to the electrostatic chuck 24 can be improved, and further, the film formation quality can be improved. In addition, as in the case of assisting the separation operation, a separate driving mechanism for lifting and lowering the push pin 301 by disposing the push pin 301 for assisting the suction operation on the magnet plate 30 previously installed as a mask suction means Without the need to install, the magnet plate lifting mechanism (magnet plate Z actuator 31) can be used as it is.

On the other hand, in the above embodiment, after the push pin 301 is retracted in the through hole 243 and the substrate S substantially contacts the electrostatic chuck 24, a difference in adsorption potential is applied to the electrostatic chuck 24. It has been described, but is not limited thereto, for example, while the push pin 301 is retracted into the through hole 243 while the substrate S is clamped by the push pin 301, and at the same time, the electrostatic chuck 24 It may be assumed that the adsorption potential difference is started to be applied.

In addition, in the case of using as an aid for the substrate adsorption operation (for preventing substrate position shift during adsorption) as described above, the push pin 301 is positioned at a position corresponding to the support portion of the substrate support unit 22, that is, at the outer peripheral end of the substrate. It is preferable to install a plurality of the corresponding magnet plate 30 at the outer circumferential position.

<Subsidiary of substrate adsorption operation and separation operation>

The push pins 301 provided on the magnet plate 30 can also be used as both the means for assisting the substrate adsorption operation described above and the means for assisting the substrate separation operation.

That is, by installing the push pin 301 at the outer peripheral position of the magnet plate 30, when the substrate S is adsorbed to the electrostatic chuck 24, as described with reference to Figs. 6A to 6C, the substrate position is prevented from shifting. It can be used as an adsorption assisting means and can also be used as a separation aiding means capable of shortening the substrate separation time as described with reference to FIG. 4E when the substrate is separated after film formation is completed. Accordingly, it is possible to obtain both the effects of the adsorption operation and the separation operation assistance.

<Method of manufacturing electronic device>

Next, an example of a method of manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, a configuration and a manufacturing method of an organic EL display device will be exemplified as an example of an electronic device.

First, an organic EL display device to be manufactured will be described. Fig. 7(a) is an overall view of the organic EL display device 60, and Fig. 7(b) shows a cross-sectional structure of one pixel.

As shown in Fig. 7A, in the display area 61 of the organic EL display device 60, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix form. Details will be described later, but each of the light emitting devices has a structure including an organic layer sandwiched between a pair of electrodes. In addition, the pixel referred to herein refers to a minimum unit capable of displaying a desired color in the display area 61. In the case of the organic EL display device according to the present embodiment, the pixel 62 is constituted by a combination of the first light-emitting element 62R, the second light-emitting element 62G, and the third light-emitting element 62B that exhibit different light emission. Has been. The pixel 62 is often composed of a combination of a red light-emitting device, a green light-emitting device, and a blue light-emitting device, but may be a combination of a yellow light-emitting device, a cyan light-emitting device, and a white light-emitting device. no.

Fig. 7(b) is a schematic partial cross-sectional view taken along line A-B in Fig. 7(a). The pixel 62 has an organic EL element including an anode 64, a hole transport layer 65, an emission layer 66R, 66G, 66B, an electron transport layer 67, and a cathode 68 on the substrate 63. . Among these, the hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to the organic layer. In the present embodiment, the light emitting layer 66R is an organic EL layer emitting red, the light emitting layer 66G is an organic EL layer emitting green, and the light emitting layer 66B is an organic EL layer emitting blue. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements emitting red, green, and blue colors (sometimes referred to as organic EL elements), respectively. In addition, the anode 64 is formed separately for each light emitting device. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, 62B, or may be formed for each light emitting element.

Further, in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign substances, an insulating layer 69 is provided between the anode 64. Further, since the organic EL layer is deteriorated by moisture or oxygen, a protective layer 70 for protecting the organic EL element from moisture or oxygen is provided.

In FIG. 7(b), the hole transport layer 65 or the electron transport layer 67 is illustrated as one layer, but depending on the structure of the organic EL display device, a plurality of layers including a hole block layer or an electron block layer may be formed. May be. In addition, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 may be formed between the anode 64 and the hole transport layer 65. . Likewise, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67.

Next, an example of a method of manufacturing an organic EL display device will be described in detail.

First, a substrate 63 on which a circuit (not shown) for driving an organic EL display device and an anode 64 are formed is prepared.

On the substrate 63 on which the anode 64 is formed, an acrylic resin is formed by spin coating, and the acrylic resin is patterned to form an opening in the portion where the anode 64 is formed by a lithography method to form the insulating layer 69. This opening corresponds to a light-emitting region in which the light-emitting element actually emits light.

The substrate 63 on which the insulating layer 69 is patterned is carried into the first organic material film forming apparatus, the substrate is held by an electrostatic chuck, and the hole transport layer 65 is formed as a common layer on the anode 64 in the display area. . The hole transport layer 65 is formed by vacuum evaporation. Actually, since the hole transport layer 65 is formed to have a size larger than that of the display area 61, a high-precision mask is not required.

Next, the substrate 63 formed up to the hole transport layer 65 is carried into the second organic material film forming apparatus, and is held by an electrostatic chuck. After the substrate and the mask are aligned, the mask is sucked with a magnet plate and adhered to the substrate, a light emitting layer 66R emitting red is formed on a portion of the substrate 63 in which an element emitting red is disposed.

Similar to the film formation of the light-emitting layer 66R, the light-emitting layer 66G emitting green is formed by the third organic material film-forming device, and further, the light-emitting layer 66B emitting blue color is formed by the fourth organic material film-forming device. After the formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed over the entire display region 61 by the fifth organic material film forming apparatus. The electron transport layer 67 is formed as a layer common to the three-color light emitting layers 66R, 66G, and 66B.

The substrate formed up to the electron transport layer 67 is transferred to a metal vapor deposition material film forming apparatus to form a cathode 68.

According to the present invention, when adsorbing a substrate to an electrostatic chuck in each of the above film forming apparatuses, and/or when separating a film-formed substrate by an electrostatic chuck to transfer to a film forming apparatus of the next step, a magnet plate (mask suction means) The push pin 301 installed in the device can be used as a means to assist in the adsorption and/or separation operation.

After that, it is transferred to a plasma CVD device to form a protective layer 70 to complete the organic EL display device 60.

From the time when the substrate 63 on which the insulating layer 69 is patterned is carried into the film forming apparatus until the film formation of the protective layer 70 is completed, when exposed to an atmosphere containing moisture or oxygen, the light-emitting layer made of an organic EL material is formed. There is a risk of deterioration due to moisture or oxygen. Therefore, in this example, the carrying in and carrying out of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.

The above embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

11: tabernacle device
22: substrate support unit
23: mask support unit
24: electrostatic chuck
243: through hole
30: magnet plate
301: push pin
31: magnet plate Z actuator

Claims (18)

A substrate support that supports the substrate from below,
A substrate adsorption means having an adsorption surface for adsorbing the substrate supported on the substrate support from above,
A film forming apparatus having a mask suction means for pulling a mask positioned under the substrate toward a film formation surface of the substrate, the mask suction means provided on a side opposite to the mask with the substrate suction means interposed therebetween,
In the substrate adsorption means, a through part in a direction perpendicular to the adsorption surface is formed,
In the mask suction means, a push pin is formed at a position corresponding to the through part, and a substrate supported on the substrate support part by the push pin passing through the through part by moving the mask suction means toward the substrate adsorption means A film forming apparatus, characterized in that it is possible to press the back surface of.
The method of claim 1,
The film forming apparatus, wherein the through part is a through hole.
The method of claim 2,
When the mask suction means relatively moves the substrate support toward the substrate suction means to adsorb the substrate supported on the substrate support to the adsorption surface of the substrate adsorption means, the push pin is moved toward the substrate adsorption means. A film forming apparatus, wherein the substrate is relatively moved to a position penetrating through the through hole, and the back surface of the substrate is pressed by the push pin between the substrate support part, thereby assisting the adsorption operation of the substrate.
The method of claim 3,
The substrate adsorption means is an electrostatic chuck for adsorbing or separating the substrate by selectively applying a substrate adsorption potential difference or a substrate separation potential difference, respectively.
The method of claim 4,
A position where the push pin passes through the through hole is a position in which the mask suction means is not in contact with the substrate suction means, and the back surface of the substrate can be pressed by the push pin. .
The method of claim 4,
The film forming apparatus, wherein the mask suction means is a magnet plate that pulls the mask by magnetic force.
The method of claim 4,
Wherein the push pin and the through hole are respectively installed at an outer circumferential position of the mask suction means and an outer circumferential position of the substrate suction means corresponding to an outer circumferential end of the substrate supported by the substrate support. .
The method of claim 7,
When the substrate is adsorbed by the substrate adsorption means, both surfaces of the outer peripheral end of the substrate are pressed by the push pin of the mask suction means and the substrate support, and the rear surface of the substrate is the adsorption surface of the substrate adsorption means. The film forming apparatus, wherein the mask suction means and the substrate support move synchronously until contacting with.
The method of claim 8,
After the back surface of the substrate is brought into contact with the suction surface of the substrate suction means due to the synchronous movement of the mask suction means and the substrate support, or simultaneously with the synchronous movement of the mask suction means and the substrate support, the substrate suction means is applied to the substrate. The film forming apparatus, wherein the substrate adsorption potential difference is applied.
Substrate adsorption means having a substrate support for supporting the substrate from below, an adsorption surface for adsorbing the substrate supported on the substrate support from above, and a mask suction means provided on the opposite side of the mask with the substrate adsorption means interposed therebetween A method of depositing a vapor deposition material on a film forming surface of the substrate through the mask using a film forming apparatus having
Adsorbing the back surface of the substrate opposite to the film-forming surface of the substrate to the adsorption surface of the substrate adsorption means;
Pulling the mask by the mask suction means to bring the mask into close contact with the film-forming surface of the substrate;
Evaporating the deposition material and depositing a deposition material on the deposition surface of the substrate through the mask,
In the substrate adsorption means, a through part in a direction perpendicular to the adsorption surface is formed,
In the mask suction means, a push pin is formed at a position corresponding to the through part,
In the step of adsorbing the rear surface of the substrate to the adsorption surface of the substrate adsorption means, the mask suction means is moved relative to the substrate adsorption means to a position where the push pin penetrates the through part, and between the substrate support part The film forming method, characterized in that by pressing the rear surface of the substrate by the push pin, the adsorption operation of the substrate is assisted.
The method of claim 10,
The film forming apparatus, wherein the through part is a through hole.
The method of claim 11,
The substrate adsorption means is an electrostatic chuck for adsorbing or separating the substrate by selectively applying a substrate adsorption potential difference or a substrate separation potential difference, respectively.
The method of claim 12,
The film forming method, characterized in that the position where the push pin penetrates the through hole is a position in which the mask suction means does not contact the substrate suction means, and the back surface of the substrate can be pressed by the push pin.
The method of claim 12,
The film forming method, wherein the mask suction means is a magnet plate that pulls the mask by magnetic force.
The method of claim 12,
Wherein the push pin and the through hole are respectively installed at an outer circumferential position of the mask suction means and an outer circumferential position of the substrate suction means corresponding to an outer circumferential end of the substrate supported by the substrate support. .
The method of claim 15,
The step of adsorbing the back surface of the substrate to the adsorption surface of the substrate adsorption means,
Relatively moving the mask suction means toward the substrate suction means to a position where the push pin penetrates the through hole,
Relatively moving the substrate support portion toward the substrate adsorption means until both surfaces of the outer circumferential end of the substrate are pressed by the push pin and the substrate support portion passing through the through hole; and
In a state in which both surfaces of the outer circumferential end of the substrate are pressed by the push pin and the substrate support, the mask suction means and the substrate support are synchronized until the rear surface of the substrate contacts the suction surface of the substrate suction means. A film forming method comprising the step of moving.
The method of claim 16,
The step of adsorbing the back surface of the substrate to the adsorption surface of the substrate adsorption means,
And applying the substrate adsorption potential difference to the substrate adsorption means, wherein the applying of the substrate adsorption potential difference comprises: the rear surface of the substrate is adsorbed by the substrate adsorption means by synchronous movement of the mask suction means and the substrate support. A film forming method, characterized in that after contacting the surface or simultaneously with the synchronous movement of the mask suction means and the substrate support.
The method of claim 11,
The step of bringing the mask into close contact with the film-forming surface of the substrate includes moving the mask suction means relative to the substrate suction means to a position where the mask suction is possible,
In the position where mask suction is possible, the push pin is located inside the through hole and does not contact the rear surface of the substrate.

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