JP4813854B2 - 基板処理装置及び半導体の製造方法 - Google Patents

基板処理装置及び半導体の製造方法 Download PDF

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Publication number
JP4813854B2
JP4813854B2 JP2005262122A JP2005262122A JP4813854B2 JP 4813854 B2 JP4813854 B2 JP 4813854B2 JP 2005262122 A JP2005262122 A JP 2005262122A JP 2005262122 A JP2005262122 A JP 2005262122A JP 4813854 B2 JP4813854 B2 JP 4813854B2
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pressure
processing
processing chamber
gas
line
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Japanese (ja)
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JP2007073880A (ja
JP2007073880A5 (https=
Inventor
有紀彦 武隈
直也 宮下
弘樹 岡宮
晴夫 森川
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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Priority to JP2005262122A priority Critical patent/JP4813854B2/ja
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JP2005262122A 2005-09-09 2005-09-09 基板処理装置及び半導体の製造方法 Expired - Lifetime JP4813854B2 (ja)

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JP2005262122A JP4813854B2 (ja) 2005-09-09 2005-09-09 基板処理装置及び半導体の製造方法

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JP2005262122A JP4813854B2 (ja) 2005-09-09 2005-09-09 基板処理装置及び半導体の製造方法

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JP2007073880A JP2007073880A (ja) 2007-03-22
JP2007073880A5 JP2007073880A5 (https=) 2008-10-16
JP4813854B2 true JP4813854B2 (ja) 2011-11-09

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100883768B1 (ko) * 2008-08-22 2009-02-18 주식회사 미래보 반도체 공정에서 액상 포집기로의 반응성 가스 역류방지장치
JP6342370B2 (ja) * 2015-09-07 2018-06-13 株式会社東芝 半導体製造装置及び半導体製造装置用除去装置
JP7175782B2 (ja) * 2019-01-25 2022-11-21 株式会社東芝 ケイ素含有物質形成装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3592923B2 (ja) * 1998-02-13 2004-11-24 東京エレクトロン株式会社 排気装置
JP3396431B2 (ja) * 1998-08-10 2003-04-14 東京エレクトロン株式会社 酸化処理方法および酸化処理装置
JP3543949B2 (ja) * 1999-11-09 2004-07-21 東京エレクトロン株式会社 熱処理装置
JP3554847B2 (ja) * 2001-07-30 2004-08-18 東京エレクトロン株式会社 熱処理装置
JP2003318172A (ja) * 2002-04-19 2003-11-07 Tokyo Electron Ltd 成膜方法、成膜処理時間補正式の導出方法、成膜装置、およびプログラム

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