JP4804930B2 - 窒化物半導体素子の製造方法 - Google Patents

窒化物半導体素子の製造方法 Download PDF

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Publication number
JP4804930B2
JP4804930B2 JP2006014216A JP2006014216A JP4804930B2 JP 4804930 B2 JP4804930 B2 JP 4804930B2 JP 2006014216 A JP2006014216 A JP 2006014216A JP 2006014216 A JP2006014216 A JP 2006014216A JP 4804930 B2 JP4804930 B2 JP 4804930B2
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layer
nitride semiconductor
semiconductor device
ingan
semiconductor layer
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JP2007200932A (ja
JP2007200932A5 (enExample
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健 中原
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Rohm Co Ltd
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Rohm Co Ltd
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  • Electrodes Of Semiconductors (AREA)
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  • Semiconductor Lasers (AREA)
JP2006014216A 2006-01-23 2006-01-23 窒化物半導体素子の製造方法 Expired - Fee Related JP4804930B2 (ja)

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JP2006014216A JP4804930B2 (ja) 2006-01-23 2006-01-23 窒化物半導体素子の製造方法

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JP2006014216A JP4804930B2 (ja) 2006-01-23 2006-01-23 窒化物半導体素子の製造方法

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JP2007200932A JP2007200932A (ja) 2007-08-09
JP2007200932A5 JP2007200932A5 (enExample) 2009-03-05
JP4804930B2 true JP4804930B2 (ja) 2011-11-02

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8588293B2 (en) 2007-08-01 2013-11-19 Nec Corporation Moving image data distribution system, its method, and its program
JP5182189B2 (ja) * 2009-03-27 2013-04-10 富士通株式会社 半導体装置の製造方法
EP2416387A4 (en) 2009-04-02 2012-12-12 Panasonic Corp NITRID SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
JP5397042B2 (ja) * 2009-06-26 2014-01-22 富士通株式会社 半導体装置の製造方法
JP4909448B2 (ja) * 2010-04-01 2012-04-04 パナソニック株式会社 窒化物系半導体素子およびその製造方法
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
US9520697B2 (en) * 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US12191626B1 (en) 2020-07-31 2025-01-07 Kyocera Sld Laser, Inc. Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3498577B2 (ja) * 1998-07-07 2004-02-16 日亜化学工業株式会社 窒化物半導体レーザ素子
US6455340B1 (en) * 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff

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