JP4793957B2 - Method for producing aluminum electrode foil for electrolytic capacitor - Google Patents

Method for producing aluminum electrode foil for electrolytic capacitor Download PDF

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JP4793957B2
JP4793957B2 JP2007022369A JP2007022369A JP4793957B2 JP 4793957 B2 JP4793957 B2 JP 4793957B2 JP 2007022369 A JP2007022369 A JP 2007022369A JP 2007022369 A JP2007022369 A JP 2007022369A JP 4793957 B2 JP4793957 B2 JP 4793957B2
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聖之 日笠
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Nichicon Capacitor Ltd
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本発明は、電解コンデンサ用アルミニウム電極箔の製造方法に関するものであり、特に、中高圧用電解コンデンサの電極箔のエッチング方法に関するものである。   The present invention relates to a method for producing an aluminum electrode foil for an electrolytic capacitor, and more particularly to a method for etching an electrode foil of a medium-high voltage electrolytic capacitor.

電解コンデンサに用いられるアルミニウム箔は、その有効表面積を拡大し、静電容量を向上させるために、電解エッチングや化学エッチング、またはそれらの両方が行われている。エッチングによるアルミニウム箔の表面積拡大は、アルミニウム資源の有効利用や製品の更なる小形化を進めるために必要であり、その要求がますます大きくなっている。   Aluminum foil used for an electrolytic capacitor is subjected to electrolytic etching, chemical etching, or both in order to increase the effective surface area and improve the capacitance. The expansion of the surface area of aluminum foil by etching is necessary for effective utilization of aluminum resources and further miniaturization of products, and the demand is increasing.

電気化学的エッチングは、反応を電気によって制御し易いという利点から、エッチング箔の生産において現在、主流として行われている方法で、中高圧エッチングの場合、前処理、エッチングピット形成の2工程に大別される(例えば特許文献1〜3、非特許文献1参照)。   Electrochemical etching has the advantage that the reaction can be easily controlled by electricity, and is currently the mainstream method in the production of etching foils. In the case of medium to high pressure etching, it has two major steps: pretreatment and etching pit formation. (For example, refer to Patent Documents 1 to 3 and Non-Patent Document 1).

このうち、エッチングピット形成工程においては、より効率的にピットを形成することを目的として複数段に分割する方法も提案されている。例えば、特許文献1〜3、非特許文献1に示されるように、エッチングピットの形成にあたって、エッチング処理を少なくとも2段階に分ける方法がとられる。すなわち、多数のピットを発生させることを目的とする第1のエッチング処理と、この第1のエッチング処理で発生したピットを所定の大きさに広げることを目的とする第2のエッチング処理に分けられている。
特開平9−180965 特開平7−211593 特開平7−272984 永田伊佐也、「電解液陰極アルミニウム電解コンデンサ」、日本蓄電池工業株式会社、平成9年2月24日、第2版第1刷 P225−241
Among these, in the etching pit formation process, a method of dividing into a plurality of stages has been proposed for the purpose of more efficiently forming pits. For example, as shown in Patent Documents 1 to 3 and Non-Patent Document 1, a method of dividing the etching process into at least two stages is taken when forming the etching pits. That is, it can be divided into a first etching process for generating a large number of pits and a second etching process for expanding the pits generated by the first etching process to a predetermined size. ing.
JP-A-9-180965 JP 7-211153 A JP-A-7-272984 Isaya Nagata, “Electrolyte Cathode Aluminum Electrolytic Capacitor”, Nippon Storage Battery Industry Co., Ltd., February 24, 1997, Second Edition, First Printing P225-241

しかしながら、上記のエッチング方法では、ピット孔径拡大工程を行う第2のエッチング処理が同一の液組成、液温、電流密度にて繰り返し孔径拡大を行う工程であったため、箔表面付近で過度の表面溶解が発生する。このため、エッチング処理後の仕上がり厚さが薄くなるので、トンネルピット長が短く、静電容量が低いという問題点がある。   However, in the above etching method, since the second etching process for performing the pit hole diameter expanding step is a process of repeatedly expanding the hole diameter at the same liquid composition, liquid temperature, and current density, excessive surface dissolution near the foil surface. Will occur. For this reason, since the finished thickness after the etching process is thin, there is a problem that the tunnel pit length is short and the capacitance is low.

以上の問題点に鑑みて、本発明の課題は、孔径拡大を図る際に表面溶解を抑制することにより、静電容量を高めることのできる電解コンデンサ用アルミニウム電極箔の製造方法を提供することにある。   In view of the above problems, an object of the present invention is to provide a method for producing an aluminum electrode foil for an electrolytic capacitor that can increase capacitance by suppressing surface dissolution when attempting to increase the pore size. is there.

上記課題を解決するために、本発明では、主としてエッチングピットを発生させる第1のエッチング処理と、該第1のエッチング処理の後、主として孔径拡大を行う第2のエッチング処理とを有する電解コンデンサ用アルミニウム電極箔の製造方法において、前記第2のエッチング処理では、硫酸、硝酸、リン酸およびシュウ酸のうちの少なくとも1つを添加剤として塩酸水溶液に添加したエッチング液を用いて複数段のエッチング工程を行い、当該複数段のエッチング工程では、前段のエッチング工程に比して後段のエッチング工程における前記添加剤の濃度、および電流密度のいずれもが大なることを特徴とする。   In order to solve the above-described problems, the present invention provides an electrolytic capacitor having a first etching process that mainly generates etching pits and a second etching process that mainly enlarges the hole diameter after the first etching process. In the method for producing an aluminum electrode foil, in the second etching process, a plurality of etching steps are performed using an etching solution in which at least one of sulfuric acid, nitric acid, phosphoric acid and oxalic acid is added as an additive to an aqueous hydrochloric acid solution. In the multi-stage etching process, both the concentration of the additive and the current density in the subsequent etching process are higher than those in the previous etching process.

本発明において、前記塩酸水溶液は、塩酸0.10〜0.60mol/Lの水溶液であり、前記複数段のエッチング工程では、前段のエッチング工程に比して後段のエッチング工程における前記添加剤の濃度が1.2〜1.4倍であり、電流密度の上昇分が5〜20mA/cmであることが好ましい。 In the present invention, the hydrochloric acid aqueous solution is an aqueous solution of hydrochloric acid of 0.10 to 0.60 mol / L, and the concentration of the additive in the subsequent etching step is higher than that in the previous etching step in the multiple etching step. Is 1.2 to 1.4 times, and the increase in current density is preferably 5 to 20 mA / cm 2 .

また、前記第2のエッチング処理において、第1段目のエッチング工程は、前記添加剤の濃度が0.005〜0.05mol/L、かつ、前記エッチング液の液温が70〜80℃、かつ、電流密度が15〜25mA/cmであることが好ましい。 In the second etching process, in the first step, the concentration of the additive is 0.005 to 0.05 mol / L, and the temperature of the etching solution is 70 to 80 ° C. The current density is preferably 15 to 25 mA / cm 2 .

さらに、前記第2のエッチング処理において、最終段のエッチング工程は、電流密度が50mA/cm以下であることが好ましい。 Furthermore, in the second etching process, it is preferable that the current density of the last-stage etching process is 50 mA / cm 2 or less.

2段階で行うアルミニウム箔の中高圧エッチング手法において、第1のエッチング処理にてエッチングピットを発生させた後、孔径拡大のための第2のエッチング処理では、複数段のエッチング工程を行なう。その際、前段に対する次段の添加剤濃度を1.2〜1.4倍、電流密度の上昇分を5〜20mA/cmの範囲に維持し、かつ、最終段エッチングの最大電流密度が50mA/cm以下とし、第2のエッチングの第1段が、0.10〜0.60mol/Lの塩酸を主体に添加剤として硫酸、硝酸、リン酸、シュウ酸のいずれかを0.005〜0.05mol/Lの濃度範囲で1種類以上混合させたエッチング液を用いて、液温70〜80℃、電流密度15〜25mA/cmの範囲でエッチングを行うと、孔径拡大が効率良く行なわれ、エッチング箔表面の無効溶解を抑制することができる。よって、箔厚減少の抑制効果が得られ、結果として化成後に得られる箔静電容量増大が可能となる。 In the medium-high pressure etching method performed in two stages, after generating etching pits in the first etching process, a multi-stage etching process is performed in the second etching process for expanding the hole diameter. At that time, the concentration of the additive in the next stage relative to the previous stage is maintained at 1.2 to 1.4 times, the increase in current density is maintained in the range of 5 to 20 mA / cm 2 , and the maximum current density in the final stage etching is 50 mA. / Cm 2 or less, and the first stage of the second etching is 0.005 to 0.005 to any one of sulfuric acid, nitric acid, phosphoric acid and oxalic acid with 0.10 to 0.60 mol / L hydrochloric acid as the main additive. When etching is performed in the range of a liquid temperature of 70 to 80 ° C. and a current density of 15 to 25 mA / cm 2 using one or more etching liquids mixed in a concentration range of 0.05 mol / L, the pore diameter is efficiently expanded. Thus, ineffective dissolution of the etching foil surface can be suppressed. Therefore, the foil thickness reduction suppressing effect can be obtained, and as a result, the foil capacitance obtained after the chemical conversion can be increased.

本発明を適用した電解コンデンサ用アルミニウム電極箔の製造方法では、まず、主としてエッチングピットを発生させる第1のエッチング処理と、該第1のエッチング処理の後、主として孔径拡大を行う第2のエッチング処理とを有することを特徴とする。   In the method for manufacturing an aluminum electrode foil for electrolytic capacitors to which the present invention is applied, first, a first etching process that mainly generates etching pits, and a second etching process that mainly enlarges the hole diameter after the first etching process. It is characterized by having.

次に、本発明では、前記第2のエッチング処理において、硫酸、硝酸、リン酸およびシュウ酸のうちの少なくとも1つを添加剤として塩酸水溶液に添加したエッチング液中での複数段のエッチング工程を行い、当該複数段のエッチング工程では、前段のエッチング工程に比して後段のエッチング工程における前記添加剤の濃度、および電流密度のいずれもが大なることを特徴とする。   Next, in the present invention, in the second etching process, a plurality of etching steps in an etching solution in which at least one of sulfuric acid, nitric acid, phosphoric acid and oxalic acid is added as an additive to an aqueous hydrochloric acid solution is performed. The multi-stage etching process is characterized in that both the concentration of the additive and the current density in the subsequent etching process are higher than those in the previous etching process.

また、本発明において、塩酸水溶液は、塩酸0.10〜0.60mol/Lの水溶液であり、前記複数段のエッチング工程では、前段のエッチング工程に比して後段のエッチング工程における前記添加剤の濃度が1.2〜1.4倍であり、電流密度の上昇分が5〜20mA/cmであることを特徴とする。また、前記第2のエッチング処理において、第1段目のエッチング工程は、前記添加剤の濃度が0.005〜0.05mol/L、かつ、前記エッチング液の液温が70〜80℃、かつ、電流密度が15〜25mA/cmであることを特徴とする。さらに、前記第2のエッチング処理において、最終段のエッチング工程は、電流密度が50mA/cm以下であることを特徴とする。 Further, in the present invention, the aqueous hydrochloric acid solution is an aqueous solution of 0.10 to 0.60 mol / L hydrochloric acid, and in the multi-stage etching step, the additive in the subsequent etching step is larger than the previous etching step. The concentration is 1.2 to 1.4 times, and the increase in current density is 5 to 20 mA / cm 2 . In the second etching process, in the first step, the concentration of the additive is 0.005 to 0.05 mol / L, and the temperature of the etching solution is 70 to 80 ° C. The current density is 15 to 25 mA / cm 2 . Further, in the second etching process, the last etching step has a current density of 50 mA / cm 2 or less.

[実施例]
以下、本発明の実施例について詳述する。
[Example]
Examples of the present invention will be described in detail below.

まず、純度99.99%、厚さ115μm、(100)表面占有率98%の高純度アルミニウム箔を、30℃の5wt%水酸化ナトリウム水溶液に30秒間浸漬して前処理を行った。   First, a high-purity aluminum foil having a purity of 99.99%, a thickness of 115 μm, and a (100) surface occupancy ratio of 98% was pretreated by being immersed in a 5 wt% sodium hydroxide aqueous solution at 30 ° C. for 30 seconds.

次に、第1のエッチング処理では、液温80℃、硫酸3.5mol/L、塩化アルミニウム0.50mol/Lのエッチング液中で、上記のアルミニウム箔に、電流密度150mA/cm、電気量20C/cmにて、電解エッチングを行った。 Next, in the first etching treatment, a current density of 150 mA / cm 2 , an amount of electricity is applied to the aluminum foil in an etching solution having a liquid temperature of 80 ° C., sulfuric acid of 3.5 mol / L, and aluminum chloride of 0.50 mol / L. Electrolytic etching was performed at 20 C / cm 2 .

次に、第2のエッチング処理では、表1〜6に示すエッチング条件で、塩酸水溶液に添加剤として硫酸、硝酸、リン酸、シュウ酸のうちのいずれかを1種以上加えたエッチング液を使用し、第1段から最終段の総電気量が30C/cmとなる電解条件にて、アルミニウム箔の孔径拡大を行なった。その際、各段で均等の電気量となるよう総電気量を分割し、エッチング箔試料を作製した。 Next, in the second etching process, an etching solution in which one or more of sulfuric acid, nitric acid, phosphoric acid, and oxalic acid is added as an additive to an aqueous hydrochloric acid solution under the etching conditions shown in Tables 1 to 6 is used. Then, the hole diameter of the aluminum foil was expanded under electrolysis conditions in which the total amount of electricity from the first stage to the last stage was 30 C / cm 2 . At that time, the total amount of electricity was divided so that the amount of electricity was equal at each stage, and an etching foil sample was prepared.

次に、作製したエッチング箔試料を60℃の0.75mol/L硝酸アルミニウム水溶液で1分間洗浄した後、50g/Lのホウ酸水溶液で267Vの化成処理を行い、静電容量、およびエッチング後の仕上がり厚さを測定した。ここで、エッチング箔の仕上がり厚さは、マイクロメータを用いて測定した。   Next, the prepared etching foil sample was washed with a 0.75 mol / L aluminum nitrate aqueous solution at 60 ° C. for 1 minute, and then subjected to a chemical conversion treatment of 267 V with a 50 g / L boric acid aqueous solution. The finished thickness was measured. Here, the finished thickness of the etching foil was measured using a micrometer.

以下、条件1〜155、従来例1〜4について、エッチング条件と、化成処理を行った後の箔静電容量、およびエッチング後の仕上がり厚さの測定結果を示す。   Hereinafter, with respect to Conditions 1 to 155 and Conventional Examples 1 to 4, the measurement results of the etching conditions, the foil capacitance after the chemical conversion treatment, and the finished thickness after the etching are shown.

なお、従来例1は、孔径拡大を合計2段で、0.50mol/Lの塩酸水溶液に0.025mol/Lの硫酸を加えたエッチング液を用いて、電流密度20mA/cm、総電気量30C/cm、液温75℃でのエッチング箔試料を作製し、化成処理後の静電容量、およびエッチング後の仕上がり厚さを測定した。その結果も併せて表1〜6に示す。また、添加剤を硫酸以外に硝酸、リン酸、シュウ酸についてもエッチング箔試料を作製し、化成処理後の静電容量、およびエッチング後の仕上がり厚さを測定した。その結果が従来例2〜4であり、この結果を表5に示す。 Conventional Example 1 has a total of two stages of pore size expansion, using an etching solution obtained by adding 0.025 mol / L sulfuric acid to a 0.50 mol / L hydrochloric acid aqueous solution, a current density of 20 mA / cm 2 , and a total electric quantity. An etching foil sample at 30 C / cm 2 and a liquid temperature of 75 ° C. was prepared, and the capacitance after the chemical conversion treatment and the finished thickness after the etching were measured. The results are also shown in Tables 1-6. Etching foil samples were also prepared for nitric acid, phosphoric acid, and oxalic acid in addition to sulfuric acid, and the capacitance after chemical conversion and the finished thickness after etching were measured. The results are Conventional Examples 2 to 4, and the results are shown in Table 5.

[第1段目での添加剤濃度および第2の段目での電流密度の増大の比較]
条件1〜25および従来例1のデータを表1に示す。第1のエッチング処理の後、第2のエッチング処理として、計2段のエッチング工程を行なう。その際、1段目および2段目のエッチング工程で添加剤として加えられる硫酸の濃度を変えるとともに、電流密度を変えた場合の静電容量比較を行なった。なお、添加剤の濃度は第1段目に対して第2段目は1.3倍に設定してある。
[Comparison of additive concentration in the first stage and increase in current density in the second stage]
Table 1 shows data of Conditions 1 to 25 and Conventional Example 1. After the first etching process, a total of two etching steps are performed as the second etching process. At that time, the concentration of sulfuric acid added as an additive in the first-stage and second-stage etching processes was changed, and the capacitance was compared when the current density was changed. The concentration of the additive is set to 1.3 times in the second stage with respect to the first stage.

(第1段目のエッチング条件)
エッチング液(塩酸水溶液):塩酸0.50mol/L
添加剤 :硫酸0.003〜0.060mol/L
エッチング液の液温 :75℃
電流密度 :20mA/cm
電気量 :15C/cm
(First stage etching conditions)
Etching solution (hydrochloric acid aqueous solution): hydrochloric acid 0.50 mol / L
Additive: 0.003-0.060 mol / L sulfuric acid
Etching solution temperature: 75 ° C
Current density: 20 mA / cm 2
Electricity: 15 C / cm 2

(第2段目のエッチング条件)
エッチング液(塩酸水溶液):塩酸0.50mol/L
添加剤 :硫酸0.0039〜0.078mol/L
エッチング液の液温 :75℃
電流密度 :20〜50mA/cm
電気量 :15C/cm
(Second-stage etching conditions)
Etching solution (hydrochloric acid aqueous solution): hydrochloric acid 0.50 mol / L
Additive: Sulfuric acid 0.0039-0.078 mol / L
Etching solution temperature: 75 ° C
Current density: 20 to 50 mA / cm 2
Electricity: 15 C / cm 2

上記条件にて、エッチングを行ってエッチング箔試料を作製し、化成処理後の静電容量、およびエッチング後の仕上がり厚さを測定した。その結果を表1および図1に示す。   Etching was performed under the above conditions to produce an etching foil sample, and the capacitance after the chemical conversion treatment and the finished thickness after the etching were measured. The results are shown in Table 1 and FIG.

Figure 0004793957
Figure 0004793957

図1において、横軸は2段目の電流密度であり、各線L11〜L15は各々、第1段目に用いたエッチング液の添加剤(硫酸)の濃度を示し、
実線L11:硫酸0.003mol/L
実線L12:硫酸0.005mol/L
実線L13:硫酸0.025mol/L
実線L14:硫酸0.050mol/L
実線L15:硫酸0.060mol/L
である。
In FIG. 1, the horizontal axis represents the current density of the second stage, and each line L11 to L15 represents the concentration of the additive (sulfuric acid) of the etching solution used in the first stage,
Solid line L11: Sulfuric acid 0.003 mol / L
Solid line L12: sulfuric acid 0.005 mol / L
Solid line L13: sulfuric acid 0.025 mol / L
Solid line L14: 0.050 mol / L sulfuric acid
Solid line L15: sulfuric acid 0.060 mol / L
It is.

表1および図1からわかるように、前段に対する次段の電流密度の増大値として+5〜20mA/cm(図1に矢印L1で示す範囲)に設定し、かつ、第1段目における添加剤濃度が0.005〜0.05mol/Lに設定した条件7〜9、条件12〜14、および条件17〜19で静電容量アップが確認できた。 As can be seen from Table 1 and FIG. 1, the increase value of the current density of the next stage relative to the previous stage is set to +5 to 20 mA / cm 2 (the range indicated by the arrow L1 in FIG. 1), and the additive in the first stage An increase in capacitance could be confirmed under conditions 7 to 9, conditions 12 to 14, and conditions 17 to 19 where the concentration was set to 0.005 to 0.05 mol / L.

より具体的には、孔径拡大を2段で行なう場合において、第1段目の液温を75℃、電流密度を20mA/cmに固定し、0.50mol/L塩酸水溶液中における硫酸濃度が0.005〜0.05mol/Lの範囲となり、その後に続く2段目の電流密度が1段目に対して、+5〜+20mA/cmの範囲で増大している条件は、エッチング後の仕上がり厚さの減少が抑えられ、化成後の箔静電容量も増大する傾向が得られた(条件7〜9、12〜14、17〜19)。これらの中で、もっとも箔静電容量が増大した条件は条件13であり、従来例1に対し7.5%の静電容量増大効果があり、エッチング終了後の仕上がり厚さに関しても従来100μmに対し、105μmであった。 More specifically, when the pore size is expanded in two stages, the first stage liquid temperature is fixed at 75 ° C., the current density is fixed at 20 mA / cm 2 , and the sulfuric acid concentration in the 0.50 mol / L hydrochloric acid aqueous solution is The condition in which the current density in the second stage after that is in the range of 0.005 to 0.05 mol / L is increased in the range of +5 to +20 mA / cm 2 with respect to the first stage is that after etching. There was a tendency that the decrease in the finished thickness was suppressed and the foil capacitance after the formation was increased (conditions 7-9, 12-14, 17-19). Among these, the condition in which the foil electrostatic capacity increased most was the condition 13, which has an effect of increasing the electrostatic capacity by 7.5% compared to the conventional example 1, and the finished thickness after the etching is also 100 μm conventionally. In contrast, it was 105 μm.

しかしながら、2段目の電流密度が1段目に対して、+5〜+20mA/cmの範囲で増大していても、1段目の0.50mol/Lの塩酸に添加する硫酸の濃度が0.005〜0.05mol/Lの範囲を満たさないエッチング条件は、箔静電容量が低下した(条件1〜5、21〜25)。これから、孔径拡大の初段における添加剤として加える硫酸濃度としては、0.005mol/Lより少なくても、0.050mol/Lより多すぎても好ましくないことが分かる。添加剤が最適な濃度範囲にないと、孔径拡大時に塩酸による溶解が過度に進行、または抑えられると考えられる。 However, even if the current density in the second stage is increased in the range of +5 to +20 mA / cm 2 with respect to the first stage, the concentration of sulfuric acid added to 0.50 mol / L hydrochloric acid in the first stage is In the etching conditions that do not satisfy the range of 0.005 to 0.05 mol / L, the foil capacitance decreased (Conditions 1 to 5, 21 to 25). From this, it can be seen that the concentration of sulfuric acid added as an additive in the first stage of pore diameter expansion is not preferable if it is less than 0.005 mol / L or more than 0.050 mol / L. If the additive is not in the optimum concentration range, it is considered that dissolution by hydrochloric acid proceeds excessively or is suppressed when the pore size is enlarged.

なお、1段目の硫酸添加剤の濃度が0.005〜0.050mol/Lの範囲にある条件であっても、1段目に対する2段目の電流密度の増大値が+5〜+20mA/cmを満たさない条件では、箔静電容量が低下した(条件6、10、11、15、16、20)。これから、第1段目に続く第2段目の電流密度の増大値が少なすぎても多すぎても好ましくないことが分かる。孔径拡大が進み、ピット径の拡大がなされていくにつれ、実質面積が増大するので、これに合わせて電流密度値を増大させることが重要であると考えられる。 Even if the concentration of the sulfuric acid additive in the first stage is in the range of 0.005 to 0.050 mol / L, the increase value of the current density in the second stage with respect to the first stage is +5 to +20 mA / The foil capacitance decreased under conditions that did not satisfy cm 2 (conditions 6, 10, 11, 15, 16, 20). From this, it can be seen that it is not preferable that the increase value of the current density in the second stage following the first stage is too small or too large. As the hole diameter increases and the pit diameter increases, the real area increases. Therefore, it is considered important to increase the current density value accordingly.

[エッチング液温および第1段目での電流密度の比較]
条件26〜50および従来例1のデータを表2に示す。第1のエッチング処理の後、第2のエッチング処理として、計2段のエッチング工程を行なう。その際、1段目から2段目のエッチング工程で添加剤として加えられる硫酸の濃度を変えるとともに、電流密度を変えた場合において、エッチング液温と、第1段目の電流密度値を変化させたときの静電容量比較を行なった。なお、添加剤の濃度は第1段目に対して第2段目は1.3倍に設定し、電流密度は、第1段目に対して第2段目で15mA/cm増大させてある。また、1段目および2段目のエッチング工程での液温を変えて静電容量比較を行なった。
[Comparison of etchant temperature and current density at the first stage]
Table 2 shows the data of Conditions 26 to 50 and Conventional Example 1. After the first etching process, a total of two etching steps are performed as the second etching process. At that time, the concentration of sulfuric acid added as an additive in the etching process from the first stage to the second stage is changed, and when the current density is changed, the etching solution temperature and the current density value in the first stage are changed. Comparison of electrostatic capacity was performed. The concentration of the additive is set to 1.3 times the second stage with respect to the first stage, and the current density is increased by 15 mA / cm 2 at the second stage relative to the first stage. is there. Further, the capacitance comparison was performed by changing the liquid temperature in the first and second etching steps.

(第1段目のエッチング条件)
エッチング液(塩酸水溶液):塩酸0.50mol/L
添加剤 :硫酸0.025mol/L
エッチング液の液温 :65〜85℃
電流密度 :10〜30mA/cm
電気量 :15C/cm
(First stage etching conditions)
Etching solution (hydrochloric acid aqueous solution): hydrochloric acid 0.50 mol / L
Additive: 0.025 mol / L sulfuric acid
Etching liquid temperature: 65 to 85 ° C.
Current density: 10 to 30 mA / cm 2
Electricity: 15 C / cm 2

(第2段目のエッチング条件)
エッチング液(塩酸水溶液):塩酸0.50mol/L
添加剤 :硫酸0.0325mol/L
エッチング液の液温 :65〜85℃
電流密度 :25〜45mA/cm
電気量 :15C/cm
(Second-stage etching conditions)
Etching solution (hydrochloric acid aqueous solution): hydrochloric acid 0.50 mol / L
Additive: Sulfuric acid 0.0325 mol / L
Etching liquid temperature: 65 to 85 ° C.
Current density: 25 to 45 mA / cm 2
Electricity: 15 C / cm 2

上記条件にて、エッチングを行ってエッチング箔試料を作製し、化成処理後の静電容量、およびエッチング後の仕上がり厚さを測定した。その結果を表2および図2に示す。   Etching was performed under the above conditions to produce an etching foil sample, and the capacitance after the chemical conversion treatment and the finished thickness after the etching were measured. The results are shown in Table 2 and FIG.

Figure 0004793957
Figure 0004793957

図2において、横軸は1段目の電流密度であり、各線L21〜L25は各々、エッチング液の液温を示し、
実線L21:液温65℃
実線L22:液温70℃
実線L23:液温75℃
実線L24:液温80℃
実線L25:液温85℃
である。
In FIG. 2, the horizontal axis is the current density of the first stage, and each of the lines L21 to L25 indicates the temperature of the etchant,
Solid line L21: liquid temperature 65 ° C.
Solid line L22: Liquid temperature 70 ° C
Solid line L23: Liquid temperature 75 ° C
Solid line L24: Liquid temperature 80 ° C
Solid line L25: liquid temperature 85 ° C.
It is.

表2および図2からわかるように、第1段目の電流密度を15〜25mA/cm(図2に矢印L2で示す範囲)に設定し、エッチング液の液温を70〜80℃に設定した条件32〜34、条件37〜39、および条件42〜44で静電容量アップが確認できた。 As can be seen from Table 2 and FIG. 2, the current density of the first stage is set to 15 to 25 mA / cm 2 (the range indicated by the arrow L2 in FIG. 2), and the etching solution temperature is set to 70 to 80 ° C. The increased capacitance was confirmed under the conditions 32-34, conditions 37-39, and conditions 42-44.

より具体的には、孔径拡大を2段で行なう場合において、エッチング液温が70〜80℃の範囲で、かつ、第1段目の電流密度が15〜25mA/cmの範囲を満たし、その後に続く2段目の電流密度が1段目の電流密度に対して+15mA/cm分だけ増大している条件は、エッチング後の仕上がり厚さの減少が抑えられ、化成後の箔静電容量も増大した(条件32〜34、37〜39、42〜44)。 More specifically, when the hole diameter is expanded in two stages, the etching solution temperature is in the range of 70 to 80 ° C. and the current density in the first stage is in the range of 15 to 25 mA / cm 2 , and then The condition in which the current density at the second stage following the step increases by +15 mA / cm 2 with respect to the current density at the first stage suppresses a decrease in the finished thickness after etching, and the foil capacitance after formation Also increased (conditions 32-34, 37-39, 42-44).

これらの中で、箔静電容量が最も増大した条件は、条件38のエッチング液温75℃で第1段目の電流密度が20mA/cmで第2段目の電流密度が35mA/cmとなる条件であることが分かり、従来例1に対し7.5%の静電容量増大効果があり、エッチング終了後の仕上がり厚みに関しても従来100μmに対し、105μmであった。 Among these, the conditions in which the foil capacitance increased most were the etching temperature of condition 38 at 75 ° C., the first stage current density of 20 mA / cm 2 and the second stage current density of 35 mA / cm 2. As a result, the capacitance was increased by 7.5% compared to the conventional example 1, and the finished thickness after the etching was 105 μm compared to the conventional 100 μm.

しかしながら、1、2段目の液温が、65℃と低すぎても85℃と高すぎても箔静電容量が低下する結果となった(条件26〜30、46〜50)。これから、液温は箔静電容量を決定する重要な因子であり、その最適液温が70〜80℃の範囲であることが分かる。液温が65℃と低すぎると孔径拡大が進まず、85℃と高すぎても孔径拡大が急激に進み、結果として表面の崩れとなり静電容量低下を引き起こす。   However, if the liquid temperature in the first and second stages was too low at 65 ° C. or too high at 85 ° C., the foil capacitance was reduced (conditions 26-30, 46-50). From this, it is understood that the liquid temperature is an important factor for determining the foil capacitance, and the optimum liquid temperature is in the range of 70 to 80 ° C. If the liquid temperature is too low at 65 ° C., the pore diameter does not expand, and even if it is too high at 85 ° C., the pore diameter increases rapidly, resulting in surface collapse and a decrease in capacitance.

なお、エッチング液温が70〜80℃の範囲を満たしていても第1段の電流密度が10mA/cmと低すぎる条件(条件31、36、41)や、30mA/cmと高すぎる条件(条件35、40、45)では箔静電容量が低下し、エッチング後の仕上がり厚さも減少してしまうことが分かる。エッチングがされた箔表面積に応じた、電流密度として最適な値を設定する必要がある。 The etching liquid temperature even meet the range of 70 to 80 ° C. The current density of the first stage is 10 mA / cm 2 and too low condition (condition 31,36,41) and, 30 mA / cm 2 and too high condition (Conditions 35, 40, and 45) show that the foil electrostatic capacity is lowered and the finished thickness after etching is also reduced. It is necessary to set an optimum value as the current density according to the etched foil surface area.

[第1段目での添加剤濃度の増大および第2段目での添加剤濃度の増大の比較]
条件51〜85および従来例1のデータを表3に示す。第1のエッチング処理の後、第2のエッチング処理として、計2段のエッチング工程を行なう。その際、1段目から2段目のエッチング工程で添加剤として加えられる硫酸の濃度を変えるとともに、電流密度を変え、第1段目での添加剤濃度(0.003〜0.0075mol/L)に対して第2段目での添加剤濃度の増大量を0.8〜2.0倍に変化させた場合の容量比較を行なった。なお、電流密度は、第1段目に対して第2段目で15mA/cm増大させてある。
[Comparison of increase in additive concentration in the first stage and increase in additive concentration in the second stage]
Table 3 shows data of Conditions 51 to 85 and Conventional Example 1. After the first etching process, a total of two etching steps are performed as the second etching process. At that time, the concentration of sulfuric acid added as an additive in the etching process from the first stage to the second stage is changed, and the current density is changed, so that the additive concentration in the first stage (0.003 to 0.0075 mol / L) is changed. ) Was compared with the volume when the amount of increase in additive concentration in the second stage was changed from 0.8 to 2.0 times. The current density is increased by 15 mA / cm 2 in the second stage relative to the first stage.

(第1段目のエッチング条件)
エッチング液(塩酸水溶液):塩酸0.50mol/L
添加剤 :硫酸0.003〜0.075mol/L
エッチング液の液温 :75℃
電流密度 :20mA/cm
電気量 :15C/cm
(First stage etching conditions)
Etching solution (hydrochloric acid aqueous solution): hydrochloric acid 0.50 mol / L
Additive: 0.003-0.075 mol / L sulfuric acid
Etching solution temperature: 75 ° C
Current density: 20 mA / cm 2
Electricity: 15 C / cm 2

(第2段目のエッチング条件)
エッチング液(塩酸水溶液):塩酸0.50mol/L
添加剤 :第1段目に対して0.8〜2.0倍
エッチング液の液温 :75℃
電流密度 :35mA/cm
電気量 :15C/cm
(Second-stage etching conditions)
Etching solution (hydrochloric acid aqueous solution): hydrochloric acid 0.50 mol / L
Additive: 0.8 to 2.0 times the first stage Etching liquid temperature: 75 ° C
Current density: 35 mA / cm 2
Electricity: 15 C / cm 2

上記条件にて、エッチングを行ってエッチング箔試料を作製し、化成処理後の静電容量、およびエッチング後の仕上がり厚さを測定した。その結果を表3および図3に示す。   Etching was performed under the above conditions to produce an etching foil sample, and the capacitance after the chemical conversion treatment and the finished thickness after the etching were measured. The results are shown in Table 3 and FIG.

Figure 0004793957
Figure 0004793957

図3において、横軸は1段目に対する2段目の添加剤(硫酸)の濃度比であり、各線L31〜L35は各々、第1段目の添加剤(硫酸)濃度を示し、
実線L31:第1段目の添加剤(硫酸)濃度0.003/mol/L
実線L32:第1段目の添加剤(硫酸)濃度0.005/mol/L
実線L33:第1段目の添加剤(硫酸)濃度0.025/mol/L
実線L34:第1段目の添加剤(硫酸)濃度0.050/mol/L
実線L35:第1段目の添加剤(硫酸)濃度0.075/mol/L
である。
In FIG. 3, the horizontal axis is the concentration ratio of the second-stage additive (sulfuric acid) to the first stage, and each line L31 to L35 indicates the first-stage additive (sulfuric acid) concentration,
Solid line L31: first-stage additive (sulfuric acid) concentration 0.003 / mol / L
Solid line L32: first stage additive (sulfuric acid) concentration 0.005 / mol / L
Solid line L33: first stage additive (sulfuric acid) concentration 0.025 / mol / L
Solid line L34: first stage additive (sulfuric acid) concentration 0.050 / mol / L
Solid line L35: first stage additive (sulfuric acid) concentration 0.075 / mol / L
It is.

表3および図3からわかるように、第2段目の添加剤(硫酸)濃度を第1段目に対して1.2〜1.4倍(図3に矢印L3で示す範囲)に設定し、第1段目の硫酸濃度を0.005〜0.050mol/Lに設定した条件60〜62、条件67〜69、および条件74〜76で静電容量アップが確認できた。   As can be seen from Table 3 and FIG. 3, the additive (sulfuric acid) concentration in the second stage is set to 1.2 to 1.4 times (range indicated by arrow L3 in FIG. 3) with respect to the first stage. The capacitance increase was confirmed under conditions 60 to 62, conditions 67 to 69, and conditions 74 to 76 in which the sulfuric acid concentration in the first stage was set to 0.005 to 0.050 mol / L.

より具体的には、孔径拡大を2段で行なう場合において、第1段目の液温を75℃、電流密度を20mA/cmに固定し、0.50mol/L塩酸水溶液中における硫酸濃度が0.005〜0.05mol/Lの範囲となり、その後に続く2段目の硫酸濃度が1段目に対して、1.2〜1.4倍で増大し、その値が0.006〜0.05mol/Lの範囲となる条件は、エッチング後の仕上がり厚さの減少が抑えられ、化成後の箔静電容量も増大した(条件60〜62、67〜69)。 More specifically, when the pore size is expanded in two stages, the first stage liquid temperature is fixed at 75 ° C., the current density is fixed at 20 mA / cm 2 , and the sulfuric acid concentration in the 0.50 mol / L hydrochloric acid aqueous solution is The concentration of sulfuric acid in the second stage that follows is increased by 1.2 to 1.4 times that of the first stage, and the value is 0.006 to 0. The conditions in the range of .05 mol / L suppressed the decrease in the finished thickness after etching, and increased the foil capacitance after formation (conditions 60 to 62, 67 to 69).

また、第1段目の液温を75℃、電流密度を20mA/cmに固定し、0.50mol/L塩酸水溶液中における硫酸濃度が0.05mol/Lであり、その後に続く2段目の硫酸濃度が1段目に対して、1.2〜1.4倍で増大し、その値が0.06〜0.07mol/Lの範囲となる条件でも、エッチング後の仕上がり厚さの減少が抑えられ、化成後の箔静電容量も増大した(条件74〜76)。 The first stage liquid temperature is fixed at 75 ° C., the current density is fixed at 20 mA / cm 2 , the sulfuric acid concentration in the 0.50 mol / L hydrochloric acid aqueous solution is 0.05 mol / L, and the subsequent second stage Even if the sulfuric acid concentration increases by 1.2 to 1.4 times that of the first stage and the value is in the range of 0.06 to 0.07 mol / L, the finished thickness after etching is reduced. Was suppressed, and the foil capacitance after the formation was increased (conditions 74 to 76).

これらの中で、最も箔静電容量が増大した条件は条件68であり、従来例1に対し7.5%の箔静電容量増大効果が見られ、エッチング終了後の仕上がり厚さも従来100μmに対し、105μmと増大した。   Among these, the condition in which the foil capacitance increased most was the condition 68, which showed an effect of increasing the foil capacitance of 7.5% compared to the conventional example 1, and the finished thickness after the etching was 100 μm conventionally. On the other hand, it increased to 105 μm.

しかしながら、2段目の硫酸濃度が1段目に対して、1.2〜1.4倍の範囲で増大していても、1段目の0.50mol/Lの塩酸に添加する硫酸濃度が0.005〜0.05mol/Lの範囲を満たさない条件は箔静電容量の低下となった(条件53〜55、81〜83)。これから、孔径拡大の初段における添加剤濃度としては、0.005mol/Lより少なくても、0.050mol/Lより多すぎても好ましくないことが分かる。   However, even if the sulfuric acid concentration in the second stage is increased in the range of 1.2 to 1.4 times that in the first stage, the sulfuric acid concentration added to 0.50 mol / L hydrochloric acid in the first stage is Conditions that did not satisfy the range of 0.005 to 0.05 mol / L resulted in a decrease in foil capacitance (conditions 53 to 55, 81 to 83). From this, it can be seen that the additive concentration in the first stage of pore diameter expansion is not preferable if it is less than 0.005 mol / L or more than 0.050 mol / L.

また、第1段目の添加剤としての硫酸が0.050mol/Lであっても、次の第2段目において添加剤濃度が第1段目に対して1.2〜1.4倍の条件から外れた条件では静電容量の低下を引き起こすことが分かった(条件72、73、77、78)。   Moreover, even if the sulfuric acid as the additive in the first stage is 0.050 mol / L, the additive concentration in the next second stage is 1.2 to 1.4 times that in the first stage. It was found that the capacitance was lowered under conditions other than the conditions (conditions 72, 73, 77, 78).

同様に、1段目の硫酸濃度が0.005〜0.05mol/Lの範囲を満たしていても、2段目の硫酸の濃度が1段目の1.2〜1.4倍の範囲を満たさない条件は、箔静電容量の低下となる(条件58、59、63〜66、70〜73、77、78)。これから、第1段目に続く第2段目の添加剤である硫酸の増大値が0.8倍や1.0倍など少なすぎても、1.5倍や2.0倍と多すぎても箔静電容量の増大に結びつかないことが分かる。箔表面が極力残るように孔径拡大を進行させるには、最適な添加剤濃度範囲があることが分かる。   Similarly, even if the sulfuric acid concentration in the first stage satisfies the range of 0.005 to 0.05 mol / L, the concentration of sulfuric acid in the second stage is 1.2 to 1.4 times that in the first stage. The condition that is not satisfied results in a decrease in foil capacitance (conditions 58, 59, 63 to 66, 70 to 73, 77, and 78). From now on, even if the increase value of sulfuric acid, which is the additive in the second stage following the first stage, is too small, such as 0.8 times or 1.0 times, it is too much as 1.5 times or 2.0 times. It can also be seen that this does not lead to an increase in foil capacitance. It can be seen that there is an optimum additive concentration range in order to advance the pore diameter expansion so that the foil surface remains as much as possible.

第1段の添加剤(硫酸)の濃度が0.005〜0.05mol/Lから外れるエッチング条件は、次段の硫酸濃度がたとえ、前段の1.2〜1.4倍であっても箔静電容量の低下となる(条件51〜57、79〜85)。   The etching conditions for the concentration of the first-stage additive (sulfuric acid) to deviate from 0.005 to 0.05 mol / L are the foil even if the sulfuric acid concentration in the next stage is 1.2 to 1.4 times that in the previous stage. The capacitance is reduced (conditions 51 to 57, 79 to 85).

[塩酸濃度および第1段目での添加剤濃度の比較]
条件86〜110および従来例1のデータを表4に示す。第1のエッチング処理の後、第2のエッチング処理として、計2段のエッチング工程を行なう。その際、1段目から2段目のエッチング工程で添加剤として加えられる硫酸の濃度を変えるとともに、電流密度を変えた場合において、塩酸濃度および第1段目での添加剤濃度を変化させたときの静電容量比較を行なった。なお、添加剤の濃度は第1段目に対して第2段目は1.3倍に設定し、電流密度は、第1段目に対して第2段目で15mA/cm増大させた。
[Comparison of hydrochloric acid concentration and additive concentration in the first stage]
Table 4 shows data for conditions 86 to 110 and Conventional Example 1. After the first etching process, a total of two etching steps are performed as the second etching process. At that time, the concentration of sulfuric acid added as an additive in the etching process from the first stage to the second stage was changed, and when the current density was changed, the hydrochloric acid concentration and the additive concentration in the first stage were changed. Comparison of capacitance was performed. The concentration of the additive was set to 1.3 times the second stage with respect to the first stage, and the current density was increased by 15 mA / cm 2 at the second stage relative to the first stage. .

(第1段目のエッチング条件)
エッチング液(塩酸水溶液):塩酸0.05〜1.0mol/L
添加剤 :硫酸0.003〜0.100mol/L
エッチング液の液温 :75℃
電流密度 :20mA/cm
電気量 :15C/cm
(First stage etching conditions)
Etching solution (hydrochloric acid aqueous solution): hydrochloric acid 0.05 to 1.0 mol / L
Additive: Sulfuric acid 0.003 to 0.100 mol / L
Etching solution temperature: 75 ° C
Current density: 20 mA / cm 2
Electricity: 15 C / cm 2

(第2段目のエッチング条件)
エッチング液(塩酸水溶液):塩酸0.05〜1.0mol/L
添加剤 :硫酸0.0039〜0.1300mol/L
エッチング液の液温 :75℃
電流密度 :35mA/cm
電気量 :15C/cm
(Second-stage etching conditions)
Etching solution (hydrochloric acid aqueous solution): hydrochloric acid 0.05 to 1.0 mol / L
Additive: Sulfuric acid 0.0039-0.1300 mol / L
Etching solution temperature: 75 ° C
Current density: 35 mA / cm 2
Electricity: 15 C / cm 2

上記条件にて、エッチングを行ってエッチング箔試料を作製し、化成処理後の静電容量、およびエッチング後の仕上がり厚さを測定した。その結果を表4および図4に示す。   Etching was performed under the above conditions to produce an etching foil sample, and the capacitance after the chemical conversion treatment and the finished thickness after the etching were measured. The results are shown in Table 4 and FIG.

Figure 0004793957
Figure 0004793957

図4において、横軸は1段目の硫酸添加濃度であり、各線L41〜L45は各々、塩酸濃度を示し、
実線L41:塩酸濃度0.05mol/L
実線L42:塩酸濃度0.1mol/L
実線L43:塩酸濃度0.5mol/L
実線L44:塩酸濃度0.6mol/L
実線L45:塩酸濃度1.0mol/L
である。
In FIG. 4, the horizontal axis represents the sulfuric acid addition concentration in the first stage, and each of the lines L41 to L45 represents the hydrochloric acid concentration,
Solid line L41: hydrochloric acid concentration 0.05 mol / L
Solid line L42: hydrochloric acid concentration 0.1 mol / L
Solid line L43: hydrochloric acid concentration 0.5 mol / L
Solid line L44: hydrochloric acid concentration 0.6 mol / L
Solid line L45: hydrochloric acid concentration 1.0 mol / L
It is.

表4および図4からわかるように、第1段目の硫酸添加濃度を0.005〜0.050mol/L(図4に矢印L4で示す範囲)に設定し、エッチング液の塩酸濃度を0.1〜0.6mol/Lに設定した条件92〜94、条件97〜99、および条件102〜104で静電容量アップが確認できた。   As can be seen from Table 4 and FIG. 4, the sulfuric acid addition concentration in the first stage is set to 0.005 to 0.050 mol / L (range indicated by the arrow L4 in FIG. 4), and the hydrochloric acid concentration in the etching solution is set to 0.00. An increase in capacitance could be confirmed under conditions 92 to 94, conditions 97 to 99, and conditions 102 to 104 set to 1 to 0.6 mol / L.

より具体的には、孔径拡大を2段で行なう場合において、第1段目の液温を75℃、電流密度を20mA/cmに固定し、ベースとなる塩酸と添加剤として加えられる硫酸の濃度値を変更させた。その結果、塩酸濃度が0.1〜0.6mol/L、硫酸濃度が0.005〜0.050mol/Lの時にエッチング後の仕上がり厚さの減少が抑えられ、化成後の箔静電容量も増大する傾向が得られた(条件92〜94、97〜99、102〜104)。 More specifically, when the pore size is expanded in two stages, the first stage liquid temperature is fixed at 75 ° C., the current density is fixed at 20 mA / cm 2 , and the base hydrochloric acid and sulfuric acid added as an additive are added. The concentration value was changed. As a result, when the hydrochloric acid concentration is 0.1 to 0.6 mol / L and the sulfuric acid concentration is 0.005 to 0.050 mol / L, the decrease in the finished thickness after etching is suppressed, and the foil capacitance after formation is also reduced. A tendency to increase was obtained (conditions 92-94, 97-99, 102-104).

これらの中で、もっとも箔静電容量が増大した条件は条件98であり、従来例1に対し7.5%の静電容量増大効果があり、エッチング終了後の仕上がり厚みに関しても従来100μmに対し、105μmであった。   Among these, the condition in which the foil capacitance increased most was the condition 98, which had an effect of increasing the capacitance by 7.5% with respect to the conventional example 1, and the finished thickness after completion of the etching was also compared with the conventional 100 μm. 105 μm.

しかしながら、塩酸濃度が0.05mol/Lと少ない条件や1.0mol/Lと多い条件では、箔静電容量が低下し(条件86〜90、106〜110)。これから、孔径拡大時の初段における塩酸濃度としては、0.010mol/Lより少なくても、0.60mol/Lより多すぎても静電容量の低下をもたらすことが分かる。   However, when the hydrochloric acid concentration is as low as 0.05 mol / L or as high as 1.0 mol / L, the foil capacitance decreases (conditions 86 to 90, 106 to 110). From this, it can be seen that the hydrochloric acid concentration in the first stage when the pore diameter is enlarged is less than 0.010 mol / L or more than 0.60 mol / L, resulting in a decrease in capacitance.

なお、塩酸濃度が0.10〜0.60mol/Lの範囲を満たしていても、添加剤として加える硫酸が0.005〜0.050mol/Lの範囲にない条件は、箔静電容量の低下となった(条件91、95、96、100、101、105)。   In addition, even if the hydrochloric acid concentration satisfies the range of 0.10 to 0.60 mol / L, the condition that the sulfuric acid added as an additive is not in the range of 0.005 to 0.050 mol / L is a decrease in foil capacitance. (Conditions 91, 95, 96, 100, 101, 105).

これから、ベースとなる塩酸濃度はもちろん、添加剤として加える硫酸の値も少なすぎても多すぎても静電容量の増大に結びつかないことが分かる。   From this, it can be seen that not only the concentration of hydrochloric acid as a base but also the value of sulfuric acid added as an additive is too small or too large, which does not lead to an increase in capacitance.

[添加剤の種類および第1段目での添加剤濃度の比較]
条件111〜130および従来例1のデータを表5に示す。第1のエッチング処理の後、第2のエッチング処理として、計2段のエッチング工程を行なう。その際、添加剤の種類および第1段目での添加剤濃度を変えるとともに、1段目から2段目のエッチング工程で添加剤濃度を変え、さらに電流密度を変えた場合の静電容量比較を行なった。なお、添加剤の濃度は第1段目に対して第2段目は1.3倍に設定し、電流密度は、第1段目に対して第2段目で15mA/cm増大させてある。
[Comparison of additive type and additive concentration in the first stage]
Table 5 shows the data of Conditions 111 to 130 and Conventional Example 1. After the first etching process, a total of two etching steps are performed as the second etching process. At that time, changing the type of additive and the additive concentration in the first stage, changing the additive concentration in the etching process from the first stage to the second stage, and comparing the current density, the capacitance comparison Was done. The concentration of the additive is set to 1.3 times the second stage with respect to the first stage, and the current density is increased by 15 mA / cm 2 at the second stage relative to the first stage. is there.

(第1段目のエッチング条件)
エッチング液(塩酸水溶液):塩酸0.5mol/L
添加剤 :硫酸0.003〜0.100mol/L
:硝酸0.003〜0.100mol/L
:リン酸0.003〜0.100mol/L
:シュウ酸0.003〜0.100mol/L
エッチング液の液温 :75℃
電流密度 :20mA/cm
電気量 :15C/cm
(First stage etching conditions)
Etching solution (hydrochloric acid aqueous solution): hydrochloric acid 0.5 mol / L
Additive: Sulfuric acid 0.003 to 0.100 mol / L
: Nitric acid 0.003-0.100 mol / L
: Phosphoric acid 0.003-0.100 mol / L
: Oxalic acid 0.003 to 0.100 mol / L
Etching solution temperature: 75 ° C
Current density: 20 mA / cm 2
Electricity: 15 C / cm 2

(第2段目のエッチング条件)
エッチング液(塩酸水溶液):塩酸0.5mol/L
添加剤 :硫酸0.0039〜0.130mol/L
:硝酸0.0039〜0.130mol/L
:リン酸0.0039〜0.130mol/L
:シュウ酸0.0039〜0.130mol/L
エッチング液の液温 :75℃
電流密度 :35mA/cm
電気量 :15C/cm
(Second-stage etching conditions)
Etching solution (hydrochloric acid aqueous solution): hydrochloric acid 0.5 mol / L
Additive: Sulfuric acid 0.0039 to 0.130 mol / L
: Nitric acid 0.0039 to 0.130 mol / L
: Phosphoric acid 0.0039-0.130 mol / L
: Oxalic acid 0.0039 to 0.130 mol / L
Etching solution temperature: 75 ° C
Current density: 35 mA / cm 2
Electricity: 15 C / cm 2

上記条件にて、エッチングを行ってエッチング箔試料を作製し、化成処理後の静電容量、およびエッチング後の仕上がり厚さを測定した。その結果を表5および図5に示す。   Etching was performed under the above conditions to produce an etching foil sample, and the capacitance after the chemical conversion treatment and the finished thickness after the etching were measured. The results are shown in Table 5 and FIG.

Figure 0004793957
Figure 0004793957

図5において、横軸は1段目の添加剤濃度であり、各線L51〜L54は各々、添加剤の種類を示し、
実線L51:添加剤:硫酸
実線L52:添加剤:硝酸
実線L53:添加剤:リン酸
実線L54:添加剤:シュウ酸
である。
In FIG. 5, the horizontal axis represents the first-stage additive concentration, and each line L51 to L54 represents the type of additive,
Solid line L51: Additive: Sulfuric acid Solid line L52: Additive: Nitric acid Solid line L53: Additive: Phosphoric acid Solid line L54: Additive: Oxalic acid.

表5および図5からわかるように、いずれの添加剤においても、第1段目の添加剤濃度を0.005〜0.050mol/L(図5に矢印L5で示す範囲)に設定した条件112〜114、条件117〜119、条件122〜124および条件127〜129で静電容量アップが確認できた。   As can be seen from Table 5 and FIG. 5, in any additive, the condition 112 in which the additive concentration in the first stage was set to 0.005 to 0.050 mol / L (range indicated by arrow L5 in FIG. 5). Up to 114, conditions 117 to 119, conditions 122 to 124, and conditions 127 to 129 were confirmed to have increased capacitance.

より具体的には、孔径拡大を2段で行なう場合において、第1段目の液温を75℃、電流密度を20.0mA/cmに固定し、0.05mol/L塩酸水溶液中における添加剤の種類をこれまでの硫酸から他の硝酸、リン酸、シュウ酸に変更させた。それぞれの従来例として、硫酸の場合が従来例1、硝酸の場合は従来例2、リン酸の場合は従来例3、シュウ酸の場合は従来例4とした。硫酸以外の添加剤においても、加えられる濃度が0.005〜0.050mol/Lの範囲にある条件では、エッチング後の仕上がり厚さの減少が抑えられ、化成後の静電容量も増大し(条件112〜114、117〜119、122〜124、127〜129)。箔静電容量の増大のためには、どの添加剤を用いても効果があるが、箔静電容量がもっとも大きくなる条件は、条件129のシュウ酸を用いた条件であった。 More specifically, when the pore size is expanded in two stages, the liquid temperature in the first stage is fixed at 75 ° C., the current density is fixed at 20.0 mA / cm 2, and added in a 0.05 mol / L hydrochloric acid aqueous solution. The type of agent was changed from conventional sulfuric acid to other nitric acid, phosphoric acid, and oxalic acid. As the respective conventional examples, the conventional example 1 is used for sulfuric acid, the conventional example 2 is used for nitric acid, the conventional example 3 is used for phosphoric acid, and the conventional example 4 is used for oxalic acid. Even in the case of additives other than sulfuric acid, when the concentration to be added is in the range of 0.005 to 0.050 mol / L, the decrease in the finished thickness after etching is suppressed, and the capacitance after formation is increased ( Conditions 112-114, 117-119, 122-124, 127-129). Any additive can be used to increase the foil capacitance, but the condition that maximizes the foil capacitance was the condition 129 using oxalic acid.

しかしながら、1段目の添加剤濃度が0.005〜0.05mol/Lの範囲を満たさない条件は箔静電容量が低下し(条件111、115、116、120、121、125、126、130)。これから、孔径拡大の初段における添加剤濃度としては、0.005mol/Lより少なくても、0.050mol/Lより多すぎても箔静電容量の増大に結びつかないことが分かる。   However, the foil capacitance decreases under conditions where the first-stage additive concentration does not satisfy the range of 0.005 to 0.05 mol / L (conditions 111, 115, 116, 120, 121, 125, 126, 130). ). From this, it can be seen that the additive concentration in the first stage of pore size expansion is less than 0.005 mol / L or more than 0.050 mol / L, which does not lead to an increase in foil capacitance.

[第1段目での添加剤濃度および最終段での電流密度の比較]
条件131〜155および従来例1のデータを表6に示す。第1のエッチング処理の後、第2のエッチング処理として、計3段のエッチング工程を行なう。その際、1段目から3段目までのエッチング工程で添加剤濃度を変え、さらに電流密度を変えた場合の静電容量比較を行なった。なお、添加剤の濃度は後段では前段に対して1.3倍に設定し、第1段目の電流密度は20mA/cmに設定してある。
[Comparison of additive concentration in the first stage and current density in the last stage]
Table 6 shows the data of Conditions 131 to 155 and Conventional Example 1. After the first etching process, a total of three etching steps are performed as the second etching process. At that time, capacitance comparison was performed when the additive concentration was changed in the etching process from the first stage to the third stage and the current density was further changed. Note that the concentration of the additive is set to 1.3 times that of the former stage in the latter stage, and the current density in the first stage is set to 20 mA / cm 2 .

(第1段目のエッチング条件)
エッチング液(塩酸水溶液):塩酸0.5mol/L
添加剤 :硫酸0.003〜0.060mol/L
エッチング液の液温 :75℃
電流密度 :20mA/cm
電気量 :15C/cm
(First stage etching conditions)
Etching solution (hydrochloric acid aqueous solution): hydrochloric acid 0.5 mol / L
Additive: 0.003-0.060 mol / L sulfuric acid
Etching solution temperature: 75 ° C
Current density: 20 mA / cm 2
Electricity: 15 C / cm 2

(第2段目のエッチング条件)
エッチング液(塩酸水溶液):塩酸0.5mol/L
添加剤 :硫酸0.0039〜0.0780mol/L
エッチング液の液温 :75℃
電流密度 :20〜50mA/cm
電気量 :15C/cm
(Second-stage etching conditions)
Etching solution (hydrochloric acid aqueous solution): hydrochloric acid 0.5 mol / L
Additive: Sulfuric acid 0.0039-0.0780 mol / L
Etching solution temperature: 75 ° C
Current density: 20 to 50 mA / cm 2
Electricity: 15 C / cm 2

(第3段目のエッチング条件)
エッチング液(塩酸水溶液):塩酸0.5mol/L
添加剤 :硫酸0.0051〜0.1014mol/L
エッチング液の液温 :75℃
電流密度 :20〜60mA/cm
電気量 :15C/cm
(Third stage etching conditions)
Etching solution (hydrochloric acid aqueous solution): hydrochloric acid 0.5 mol / L
Additive: Sulfuric acid 0.0051 to 0.1014 mol / L
Etching solution temperature: 75 ° C
Current density: 20 to 60 mA / cm 2
Electricity: 15 C / cm 2

上記条件にて、エッチングを行ってエッチング箔試料を作製し、化成処理後の静電容量、およびエッチング後の仕上がり厚さを測定した。その結果を表6および図6に示す。   Etching was performed under the above conditions to produce an etching foil sample, and the capacitance after the chemical conversion treatment and the finished thickness after the etching were measured. The results are shown in Table 6 and FIG.

Figure 0004793957
Figure 0004793957

図6において、横軸は第3段目(最終段)の電流密度であり、各線L61〜L65は各々、第1段目の添加剤(硫酸)濃度を示し、
実線L61:第1段目の添加剤(硫酸)濃度0.003/mol/L
実線L62:第1段目の添加剤(硫酸)濃度0.005/mol/L
実線L63:第1段目の添加剤(硫酸)濃度0.025/mol/L
実線L64:第1段目の添加剤(硫酸)濃度0.050/mol/L
実線L65:第1段目の添加剤(硫酸)濃度0.060/mol/L
である。
In FIG. 6, the horizontal axis represents the current density of the third stage (final stage), and each line L61 to L65 represents the concentration of the additive (sulfuric acid) in the first stage,
Solid line L61: First stage additive (sulfuric acid) concentration 0.003 / mol / L
Solid line L62: first-stage additive (sulfuric acid) concentration 0.005 / mol / L
Solid line L63: first-stage additive (sulfuric acid) concentration 0.025 / mol / L
Solid line L64: concentration of the first stage additive (sulfuric acid) 0.050 / mol / L
Solid line L65: first stage additive (sulfuric acid) concentration 0.060 / mol / L
It is.

表6および図6からわかるように、第3段目の電流密度を50mA/cm以下、好ましくは第3段目の電流密度を30〜50mA/cm(図6に矢印L6で示す範囲)に設定し、第1段目の添加剤濃度を0.005〜0.050mol/Lに設定した条件137、138、条件142、143、および条件147、148で静電容量アップが確認できた。 As can be seen from Table 6 and FIG. 6, the current density of the third stage is 50 mA / cm 2 or less, preferably the current density of the third stage is 30 to 50 mA / cm 2 (the range indicated by the arrow L6 in FIG. 6). In the conditions 137 and 138, the conditions 142 and 143, and the conditions 147 and 148 in which the additive concentration in the first stage was set to 0.005 to 0.050 mol / L, it was confirmed that the capacitance was increased.

より具体的には、孔径拡大を3段で行なう場合において、第1段目の液温を75℃、電流密度を20mA/cm、0.05mol/L塩酸水溶液中における硫酸の濃度を0.003〜0.060mol/Lの範囲で変更させ、次に続く段の電流密度を+5〜+20mA/cmの範囲で増大させ、硫酸濃度に関しても前段に対して1.2〜1.4倍の範囲にある1.3倍になる様に調整させる手法で続けて合計3段で孔径拡大を行なった条件では、エッチング後の仕上がり厚さの減少が抑えられ、化成後の箔静電容量も増大する傾向がみられた(条件137、138、142、143、147、148)。 More specifically, when the pore size is expanded in three stages, the first stage liquid temperature is 75 ° C., the current density is 20 mA / cm 2 , and the sulfuric acid concentration in the 0.05 mol / L hydrochloric acid aqueous solution is 0.00. In the range of 003 to 0.060 mol / L, the current density of the subsequent stage is increased in the range of +5 to +20 mA / cm 2 , and the sulfuric acid concentration is also 1.2 to 1.4 times that of the previous stage. Under the condition that the hole diameter was expanded in total of 3 steps by the method of adjusting to 1.3 times within the range of the above, the reduction of the finished thickness after etching was suppressed, and the foil capacitance after formation was also reduced There was a tendency to increase (conditions 137, 138, 142, 143, 147, 148).

しかしながら、孔径拡大の最終段で電流密度が50mA/cmを超えてしまう条件(条件139、144、149)では箔静電容量が低下した。また、前段に対する次段の電流密度の増大値が+5〜+20mA/cmの範囲を外れ、増大しないもの(条件136、141、146)や、高すぎるもの(条件140、145、150)も同様に箔静電容量が低下した。 However, the foil capacitance decreased under the conditions (conditions 139, 144, 149) in which the current density exceeded 50 mA / cm 2 at the final stage of the hole diameter expansion. In addition, there are those in which the increase value of the current density of the next stage with respect to the previous stage is out of the range of +5 to +20 mA / cm 2 and does not increase (conditions 136, 141, 146) or too high (conditions 140, 145, 150). Similarly, the foil capacitance decreased.

これらから、最終段の電流密度が50mA/cmを超えないことが重要であることが分かった。 From these, it was found that it is important that the current density of the final stage does not exceed 50 mA / cm 2 .

(まとめ)
上記の結果より、エッチング処理を2段階で行なう電解コンデンサ用電極箔の製造方法において、エッチングピットを発生させる第1のエッチング工程と、孔径拡大を行う第2のエッチング工程で行う際、第2のエッチング工程における液温が70〜80℃で、エッチング液が0.10〜0.60mol/Lの範囲の塩酸を主体とし、それに添加剤(硫酸、硝酸、リン酸、シュウ酸)を0.005〜0.05mol/L添加させた混合液を用い、前段に対する次段の添加剤濃度が1.2〜1.4倍、電流密度の上昇分が5〜20mA/cmの範囲に設定して、エッチングを複数段で行ない、最初の孔径拡大における電流密度が15〜25mA/cmの範囲で行なえば、孔径拡大を効率良く行うとともに、エッチング箔表面の溶解を抑制することができる。よって、箔厚減少の抑制効果が得られ、さらなる容量増大が可能となる。
(Summary)
From the above results, in the method for manufacturing an electrolytic capacitor electrode foil in which the etching process is performed in two stages, the second etching process is performed when the first etching process for generating etching pits and the second etching process for expanding the hole diameter are performed. The liquid temperature in the etching process is 70 to 80 ° C., the etching liquid is mainly hydrochloric acid in the range of 0.10 to 0.60 mol / L, and additives (sulfuric acid, nitric acid, phosphoric acid, oxalic acid) are added to 0.005. Using a mixed solution to which ~ 0.05 mol / L was added, the concentration of the additive in the next stage relative to the previous stage was set to 1.2 to 1.4 times, and the increase in current density was set to the range of 5 to 20 mA / cm 2. , etching is performed in multiple stages, it is carried out in a range current density of 15~25mA / cm 2 in the first hole diameter enlargement, with the hole diameter enlargement efficiently, suppressing the dissolution of the etching foil surface Rukoto can. Therefore, the effect of suppressing the foil thickness reduction is obtained, and the capacity can be further increased.

なお、上記条件では、孔径拡大時のエッチング液として、塩酸水溶液に硫酸を添加した液を主に用いたが、これ以外に硝酸、リン酸、シュウ酸を使用してもよく、塩酸、硫酸、硝酸、リン酸、シュウ酸の2種以上を混合して使用してもよい。   In addition, in the above conditions, a liquid obtained by adding sulfuric acid to an aqueous hydrochloric acid solution was mainly used as an etching liquid at the time of pore size enlargement, but nitric acid, phosphoric acid, oxalic acid may be used in addition to this, hydrochloric acid, sulfuric acid, A mixture of two or more of nitric acid, phosphoric acid and oxalic acid may be used.

第2のエッチング処理において、第1段目での添加剤濃度および第2段目での電流密度の増大量を変化させた場合の静電容量変化を示すグラフである。In a 2nd etching process, it is a graph which shows an electrostatic capacitance change at the time of changing the increase amount of the additive density in the 1st step, and the current density in the 2nd step. 第2のエッチング処理において、エッチング液温および第1段目での電流密度を変化させた場合の静電容量変化を示すグラフである。It is a graph which shows an electrostatic capacitance change at the time of changing etching liquid temperature and the current density in the 1st step in the 2nd etching process. 第2のエッチング処理において、第1段目での添加剤濃度および第2段目での添加剤濃度の増大量を変化させた場合の静電容量変化を示すグラフである。In a 2nd etching process, it is a graph which shows an electrostatic capacitance change at the time of changing the increase amount of the additive concentration in the 1st step, and the additive concentration in the 2nd step. 第2のエッチング処理において、塩酸濃度および第1段目での添加剤濃度を変化させた場合の静電容量変化を示すグラフである。It is a graph which shows an electrostatic capacitance change at the time of changing hydrochloric acid concentration and additive concentration in the 1st step in the 2nd etching treatment. 第2のエッチング処理において、添加剤の種類および第1段目での添加剤濃度を変化させた場合の静電容量変化を示すグラフである。In a 2nd etching process, it is a graph which shows the electrostatic capacitance change at the time of changing the kind of additive and the additive density | concentration in the 1st step. 第2のエッチング処理において、第1段目での添加剤濃度および最終段での電流密度を変化させた場合の静電容量変化を示すグラフである。In a 2nd etching process, it is a graph which shows an electrostatic capacitance change at the time of changing the additive density | concentration in the 1st step | paragraph, and the current density in the last step | paragraph.

Claims (4)

主としてエッチングピットを発生させる第1のエッチング処理と、該第1のエッチング処理の後、主として孔径拡大を行う第2のエッチング処理とを有する電解コンデンサ用アルミニウム電極箔の製造方法において、
前記第2のエッチング処理では、硫酸、硝酸、リン酸およびシュウ酸のうちの少なくとも1つを添加剤として塩酸水溶液に添加したエッチング液を用いて複数段のエッチング工程を行い、
当該複数段のエッチング工程では、前段のエッチング工程に比して後段のエッチング工程における前記添加剤の濃度、および電流密度のいずれもが大なることを特徴とする電解コンデンサ用アルミニウム電極箔の製造方法。
In the manufacturing method of an aluminum electrode foil for an electrolytic capacitor, which mainly includes a first etching process that generates etching pits and a second etching process that mainly enlarges the hole diameter after the first etching process.
In the second etching process, a multi-stage etching process is performed using an etching solution in which at least one of sulfuric acid, nitric acid, phosphoric acid, and oxalic acid is added to an aqueous hydrochloric acid solution as an additive,
In the multi-stage etching process, both the concentration of the additive and the current density in the subsequent etching process are higher than those in the previous etching process. .
前記塩酸水溶液は、塩酸0.10〜0.60mol/Lの水溶液であり、
前記複数段のエッチング工程では、前段のエッチング工程に比して後段のエッチング工程における前記添加剤の濃度が1.2〜1.4倍であり、電流密度の上昇分が5〜20mA/cmであることを特徴とする請求項1に記載の電解コンデンサ用アルミニウム電極箔の製造方法。
The hydrochloric acid aqueous solution is an aqueous solution of hydrochloric acid 0.10 to 0.60 mol / L,
In the multiple-stage etching process, the concentration of the additive in the subsequent etching process is 1.2 to 1.4 times that in the previous etching process, and the increase in current density is 5 to 20 mA / cm 2. The manufacturing method of the aluminum electrode foil for electrolytic capacitors of Claim 1 characterized by the above-mentioned.
前記第2のエッチング処理において、第1段目のエッチング工程は、前記添加剤の濃度が0.005〜0.05mol/L、かつ、前記エッチング液の液温が70〜80℃、かつ、電流密度が15〜25mA/cmであることを特徴とする請求項2に記載の電解コンデンサ用アルミニウム電極箔の製造方法。 In the second etching process, in the first etching step, the concentration of the additive is 0.005 to 0.05 mol / L, the temperature of the etching solution is 70 to 80 ° C., and the current is The method for producing an aluminum electrode foil for electrolytic capacitors according to claim 2 , wherein the density is 15 to 25 mA / cm2. 前記第2のエッチング処理において、最終段のエッチング工程は、電流密度が50mA/cm以下であることを特徴とする請求項1乃至3の何れか1項に記載の電解コンデンサ用アルミニウム電極箔の製造方法。 4. The aluminum electrode foil for an electrolytic capacitor according to claim 1, wherein in the second etching process, a current density of the final etching process is 50 mA / cm 2 or less. 5. Production method.
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