JP4811939B2 - Formation method of electrode foil for electrolytic capacitor - Google Patents

Formation method of electrode foil for electrolytic capacitor Download PDF

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JP4811939B2
JP4811939B2 JP2006280807A JP2006280807A JP4811939B2 JP 4811939 B2 JP4811939 B2 JP 4811939B2 JP 2006280807 A JP2006280807 A JP 2006280807A JP 2006280807 A JP2006280807 A JP 2006280807A JP 4811939 B2 JP4811939 B2 JP 4811939B2
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porous
porous film
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electrolytic capacitor
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知恵子 内山
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Nichicon Capacitor Ltd
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Description

本発明は電解コンデンサ用電極箔の化成方法に関するものである。   The present invention relates to a method for forming an electrode foil for an electrolytic capacitor.

従来、高リプル電流が印加されたり、急速な充放電が行われるような電解コンデンサでは、より一層の漏れ電流低減が要求され、このような電解コンデンサに用いられるアルミニウム電極箔は、表面を粗面化したアルミニウム箔の表面に、ポーラス型皮膜を生成させ得る硫酸、シュウ酸およびリン酸のうちの少なくとも1種を含む化成液中で電流を印加して陽極酸化を行うことによりポーラス型皮膜を生成させ、その後、ホウ酸、アジピン酸、リン酸、またはそれらの塩の単独水溶液またはこれらの混合水溶液を用いて非晶質のバリアー型皮膜を生成させて製造している(例えば、非特許文献1参照)。   Conventionally, in an electrolytic capacitor in which a high ripple current is applied or rapid charge / discharge is performed, a further reduction in leakage current is required. The aluminum electrode foil used in such an electrolytic capacitor has a rough surface. A porous film is formed by applying an electric current to the surface of the converted aluminum foil and applying an electric current in a chemical conversion solution containing at least one of sulfuric acid, oxalic acid and phosphoric acid that can form a porous film. And then producing an amorphous barrier-type film using a single aqueous solution of boric acid, adipic acid, phosphoric acid, or a salt thereof or a mixed aqueous solution thereof (for example, Non-Patent Document 1). reference).

また、上記の低漏れ電流化に対して、バリアー型皮膜生成後の皮膜の全面にわたってポーラス型皮膜が少なくとも30nm以上残存するような皮膜形状を有した化成方法が知られている(例えば、特許文献1参照)。
また、ポーラス型皮膜を生成させ得る化成溶液と同じ溶液中でアルミニウム箔の化学処理を行う化学処理工程を設けた方法もある(例えば、特許文献2参照)。
さらに、100V以下の耐電圧を有する皮膜生成の前に、電極箔表面に薄い酸化皮膜(Pre皮膜)を生成する方法もある(例えば、特許文献3参照)。
特開平8−293441号公報 特開平6−302476号公報 特公平07−082968号公報 永田伊佐也著、「電解液陰極アルミニウム電解コンデンサ」、日本蓄電器工業株式会社、平成9年2月24日、P272−278
Further, a chemical conversion method having a film shape in which a porous film remains at least 30 nm or more over the entire surface of the film after the generation of the barrier film is known (for example, patent document). 1).
In addition, there is a method in which a chemical treatment process is performed in which a chemical treatment of an aluminum foil is performed in the same solution as a chemical conversion solution capable of generating a porous film (see, for example, Patent Document 2).
Furthermore, there is also a method of forming a thin oxide film (Pre film) on the surface of the electrode foil before generating a film having a withstand voltage of 100 V or less (see, for example, Patent Document 3).
JP-A-8-293441 JP-A-6-302476 Japanese Patent Publication No. 07-082968 By Nagata Isaya, “Electrolytic Cathode Aluminum Electrolytic Capacitor”, Nippon Electric Storage Co., Ltd., February 24, 1997, P272-278

上記の低漏れ電流化対応として、特許文献1記載のバリアー型皮膜生成後の皮膜全面にわたってポーラス型皮膜が少なくとも30nm以上残存する皮膜形状を有した化成方法では、ポーラス型皮膜生成に要する電気量が増加する欠点を有している。
また、特許文献2記載のポーラス型皮膜を生成させ得る化成溶液と同じ溶液中でアルミニウム箔の化学処理を行う化学処理工程を設ける方法では、アルミニウムの溶解が著しく、高密度に形成したエッチング孔の構造が崩れてしまい、静電容量が低下してしまうという欠点を有している。
さらに、特許文献3記載の100V以下の耐電圧を有する皮膜生成の前に、電極箔表面に薄い酸化皮膜(Pre皮膜)を生成する方法では、中高圧化成の場合のように皮膜が厚いと効果が小さい。
本発明は、上記課題を解決するもので、エッチング部分の溶解による静電容量の低下を防ぎ、化成電気量を増加させずに、高耐電圧製品に対しても漏れ電流の低減を実現でき、高リプル電流や急速な充放電に耐えうる電解コンデンサ用電極箔の製造方法を提供するものである。
In response to the above-described reduction in leakage current, in the chemical conversion method having a film shape in which at least 30 nm or more of the porous film remains on the entire surface of the film after the generation of the barrier film described in Patent Document 1, the amount of electricity required for generating the porous film is It has increasing drawbacks.
Further, in the method of providing a chemical treatment step of performing chemical treatment of aluminum foil in the same solution as the chemical conversion solution capable of generating a porous film described in Patent Document 2, the dissolution of aluminum is remarkably high, and etching holes formed at high density are formed. The structure is broken and the electrostatic capacity is lowered.
Furthermore, in the method of forming a thin oxide film (Pre film) on the surface of the electrode foil before the generation of a film having a withstand voltage of 100 V or less described in Patent Document 3, it is effective if the film is thick as in the case of medium to high pressure conversion. Is small.
The present invention solves the above problems, prevents a decrease in electrostatic capacity due to dissolution of the etched portion, can reduce the leakage current even for high withstand voltage products without increasing the amount of chemical electricity, The present invention provides a method for producing an electrode foil for electrolytic capacitors that can withstand high ripple current and rapid charge / discharge.

すなわち、本発明は、硫酸、シュウ酸およびリン酸のうち、少なくとも1種を含む化成液を用いてアルミニウム箔の表面にポーラス型皮膜を生成させるポーラス型皮膜生成工程と、バリアー型皮膜を生成させるバリアー型皮膜生成工程とを有し、前記ポーラス型皮膜生成工程の前に、0.02〜0.20g/Lの水酸化ナトリウム水溶液による化学処理工程を設け、ポーラス型皮膜生成工程で生成させる皮膜厚さが、バリアー型皮膜厚さの50〜80%であることを特徴とする電解コンデンサ用電極箔の化成方法である。 That is, the present invention generates a porous film by using a chemical liquid containing at least one of sulfuric acid, oxalic acid, and phosphoric acid to form a porous film on the surface of the aluminum foil, and generates a barrier film. A film that is formed in the porous film forming process by providing a chemical treatment process with 0.02 to 0.20 g / L aqueous sodium hydroxide before the porous film forming process. The method for forming an electrode foil for an electrolytic capacitor, wherein the thickness is 50 to 80% of the thickness of the barrier type film .

本発明により、従来技術と比べて、エッチング部分が溶解して静電容量の低下を招くことがなくなるため、高耐電圧製品に対しても、化成電気量を増加させずに、漏れ電流低減を実現でき、高リプル電流や急速な充放電に耐えうる電解コンデンサ用電極箔の製造方法を提供することができる。   According to the present invention, compared with the prior art, the etched portion is not dissolved and the capacitance is not lowered. Therefore, even for a high voltage product, the leakage current can be reduced without increasing the amount of chemical formation. It is possible to provide an electrolytic capacitor electrode foil manufacturing method that can be realized and can withstand high ripple current and rapid charge / discharge.

以下、本発明の実施例について説明する。   Examples of the present invention will be described below.

[実施例2、5、8、9、比較例1、10]水酸化ナトリウム処理液濃度比較
実施例2、5、8、9、比較例1、10では、高リプル電流や急速な充放電が負荷される電解コンデンサに用いられるアルミニウム電極箔を製造するにあたって、化学処理工程で、表1に示すように、液温が60℃、濃度が各々0.01、0.02、0.04、0.10、0.20、0.30g/Lの水酸化ナトリウム水溶液中にアルミニウム箔(エッチング箔)を5分間浸漬した後、ポーラス型皮膜生成工程で、液温45℃、濃度20g/Lの硫酸水溶液中で、電流密度50mA/cm2で11分間、直流電流を印加して化成を行い、アルミニウム箔表面に厚さ560nmのポーラス型皮膜を生成させる。
次に、バリアー型皮膜生成工程では、100gのホウ酸と0.04gのホウ酸アンモニウムとを純水に溶解して1Lの水溶液とし、90℃に加温して、該水溶液(化成液)中に、上記ポーラス型皮膜を生成させたアルミニウム箔を浸漬し、電流密度25mA/cmで化成電圧600Vまで化成を行い、上記化成電圧にて30分間保持することにより、ポーラス型皮膜を封口し、さらにポーラス型皮膜上にもバリアー型皮膜を形成して厚さ840nmの非晶質のバリアー型皮膜を生成させた(ポーラス型/バリアー型皮膜の厚さ比率=560/840≒66.7%)。
[ Examples 2 , 5, 8 , 9 and Comparative Examples 1 and 10] Sodium hydroxide treatment solution concentration comparison In Examples 2 , 5 , 8 , 9 and Comparative Examples 1 and 10, high ripple current and rapid charge and discharge were observed. In manufacturing the aluminum electrode foil used for the electrolytic capacitor to be loaded, in the chemical treatment step, as shown in Table 1, the liquid temperature is 60 ° C., and the concentrations are 0.01, 0.02, 0.04, 0, respectively. .10, 0.20, 0.30 g / L Aqueous solution of sodium hydroxide in an aqueous solution of sodium hydroxide (etching foil) for 5 minutes, and then in a porous film forming step, sulfuric acid having a liquid temperature of 45 ° C. and a concentration of 20 g / L In an aqueous solution, a direct current is applied for 11 minutes at a current density of 50 mA / cm 2 to form a porous film having a thickness of 560 nm on the surface of the aluminum foil.
Next, in the barrier type film forming step, 100 g of boric acid and 0.04 g of ammonium borate are dissolved in pure water to form a 1 L aqueous solution, heated to 90 ° C., and the aqueous solution (chemical conversion solution) Then, the aluminum foil on which the porous film is formed is immersed, formed at a current density of 25 mA / cm 2 up to a formation voltage of 600 V, and held at the formation voltage for 30 minutes, thereby sealing the porous film. Further, a barrier-type film was formed on the porous-type film to produce an amorphous barrier-type film having a thickness of 840 nm (thickness ratio of porous-type / barrier-type film = 560 / 840≈66.7%). .

[実施例〜7、比較例3]ポーラス型/バリアー型皮膜の厚さ比率比較
実施例〜7、比較例3では化学処理工程において、表1に示すように、液温が60℃、濃度が0.04g/Lの水酸化ナトリウム水溶液中にエッチング箔を5分間浸漬させ、その後のポーラス型皮膜形成工程は、比較例1と同様の条件で、各々7、8、11、13、14分間、直流電流を印加して化成を行い、表面に各々380、420、560、670、710nmのポーラス型皮膜を生成させ、その後のバリアー型皮膜生成工程も実施例1と同様の条件で化成を行った。
その結果、ポーラス型/バリアー型皮膜の厚さ比率が、380/840(≒45.2%)、420/840(=50.0%)、560/840(≒66.7%)、670/840(≒79.8%)、710/840(≒84.5%)の皮膜が生成した。
[Example 4-7, Comparative Example 3]-porous / barrier type thickness ratio Comparative Examples 4-7 of the film, in the chemical treatment step in Comparative Example 3, as shown in Table 1, the liquid temperature is 60 ° C., The etching foil is immersed in an aqueous sodium hydroxide solution having a concentration of 0.04 g / L for 5 minutes, and the subsequent porous film forming step is performed under the same conditions as in Comparative Example 1, respectively 7, 8, 11, 13, 14 For example, a direct current is applied for a minute to form a porous film of 380, 420, 560, 670, and 710 nm on the surface, and the subsequent barrier film formation process is performed under the same conditions as in Example 1. went.
As a result, the thickness ratio of the porous type / barrier type film was 380/840 (≈45.2%), 420/840 (= 50.0%), 560/840 (≈66.7%), 670 / 840 (≈79.8%) and 710/840 (≈84.5%) films were formed.

(従来例1)
従来例1では、比較例1のような化学処理工程を設けず、ポーラス型皮膜生成工程とバリアー型皮膜生成工程については比較例1と同様とした。
(Conventional example 1)
In Conventional Example 1, the chemical treatment process as in Comparative Example 1 was not provided, and the porous film generation process and the barrier film generation process were the same as in Comparative Example 1.

(従来例2)
従来例2では、比較例1のような化学処理工程を設けず、ポーラス型皮膜生成工程において、印加時間を14分にする以外は比較例1と同様とし、厚さ710nmのポーラス型皮膜を生成させ、次にバリアー型皮膜生成工程を比較例1と同様に設けた。
(Conventional example 2)
In Conventional Example 2, without providing the chemical processing steps such as Comparative Example 1, the porous type film generation process, except that the applied time 14 minutes was the same as Comparative Example 1, produces a porous type coating thickness 710nm Next, a barrier type film generation step was provided in the same manner as in Comparative Example 1.

(従来例3)
従来例3では、化学処理工程において、液温45℃の20g/L硫酸水溶液中にエッチング箔を2分間浸漬させ、その後のポーラス型皮膜生成工程とバリアー型皮膜生成工程は、比較例1と同様とした。
(Conventional example 3)
In Conventional Example 3, in the chemical treatment step, the etching foil was immersed in a 20 g / L sulfuric acid aqueous solution having a liquid temperature of 45 ° C. for 2 minutes, and the subsequent porous type film generation step and barrier type film generation step were the same as in Comparative Example 1. It was.

[実施例11、12]ポーラス型皮膜生成用化成液の比較
実施例11、12では、実施例5のポーラス型皮膜生成工程において、液温45℃、濃度20g/Lの硫酸水溶液中の代わりに、各々、液温45℃、濃度100g/Lのシュウ酸水溶液、濃度50g/Lのリン酸水溶液を使用した以外は実施例1と同様にして、化学処理、バリアー型皮膜形成を行い、ポーラス型/バリアー型皮膜の厚さ比率が、560/840(≒66.7%)の皮膜を生成させた。
[Examples 11 and 12] Comparison of chemical conversion liquids for producing a porous film In Examples 11 and 12, in the porous film production process of Example 5, instead of in a sulfuric acid aqueous solution having a liquid temperature of 45 ° C and a concentration of 20 g / L. In the same manner as in Example 1 except that an oxalic acid aqueous solution having a liquid temperature of 45 ° C., a concentration of 100 g / L, and a phosphoric acid aqueous solution having a concentration of 50 g / L were used, a chemical treatment and a barrier-type film formation were carried out. A film having a / barrier type film thickness ratio of 560/840 (≈66.7%) was produced.

上記した本発明の実施例2、4〜6、8、9、11〜12、比較例1、3、7、10、従来例1〜3により得られた電解コンデンサ用電極箔について、液温90℃、濃度100g/Lのホウ酸水溶液中で漏れ電流を測定し、続いて液温30℃、濃度100g/Lのホウ酸アンモニウム水溶液中で静電容量を測定した。また、上記アルミニウム箔の陽極酸化に用いられた化成電気量も測定した。その結果を表1に示す。 About the electrode foil for electrolytic capacitors obtained by the above-described Examples 2, 4 to 6, 8 , 9 , 11 to 12, Comparative Examples 1, 3, 7, 10 and Conventional Examples 1 to 3, the liquid temperature was 90. The leakage current was measured in a boric acid aqueous solution at 100 ° C. and a concentration of 100 g / L, and then the capacitance was measured in an aqueous ammonium borate solution at a liquid temperature of 30 ° C. and a concentration of 100 g / L. Moreover, the amount of chemical electricity used for the anodic oxidation of the aluminum foil was also measured. The results are shown in Table 1.

Figure 0004811939
Figure 0004811939

[水酸化ナトリウム処理液濃度比較]
表1から明らかなように、実施例2、5、8、9の電解コンデンサ用電極箔は従来例1と比較して漏れ電流が低減し、静電容量は従来例1と同等であることが分かる。
また、実施例2、5、8、9の電解コンデンサ用電極箔は従来例2、3と比較して漏れ電流は同等であり、静電容量は従来例2、3より高くなっている。
また、水酸化ナトリウム水溶液の濃度は、0.02〜0.20g/Lの範囲が好適であることが分かる(実施例2、5、8、9)。0.30g/Lでは溶解が起こり、静電容量の低下を招く(比較例10)。また、水酸化ナトリウム濃度が0.01g/Lでは化学処理の効果がほとんど得られず、漏れ電流低減効果がほとんど得られない(比較例1)。
[Sodium hydroxide treatment solution concentration comparison]
As is clear from Table 1 , the electrolytic capacitor electrode foils of Examples 2 , 5 , 8 , and 9 have reduced leakage current as compared with Conventional Example 1, and the capacitance is equivalent to Conventional Example 1. I understand.
In addition, the electrolytic capacitor electrode foils of Examples 2, 5, 8, and 9 have the same leakage current as that of Conventional Examples 2 and 3, and the capacitance is higher than that of Conventional Examples 2 and 3.
Moreover, it turns out that the range of 0.02-0.20 g / L is suitable for the density | concentration of sodium hydroxide aqueous solution (Example 2, 5, 8, 9). Dissolution occurs at 0.30 g / L, leading to a decrease in capacitance ( Comparative Example 10). Further, when the sodium hydroxide concentration is 0.01 g / L, the chemical treatment effect is hardly obtained and the leakage current reducing effect is hardly obtained ( Comparative Example 1).

[ポーラス型/バリアー型皮膜の厚さ比率比較]
さらに、表1から明らかなように、ポーラス型/バリアー型皮膜の厚さ比率は、50〜80%の範囲が好適であることが分かる(実施例4〜6)。ポーラス型皮膜が薄く、上記比率が45%では、漏れ電流が高くなり(比較例3)、ポーラス型皮膜が厚く、上記比率が85%では、化成電気量が多くなる(比較例7)。
[Comparison of thickness ratio of porous type / barrier type film]
Furthermore, as is clear from Table 1, it can be seen that the thickness ratio of the porous type / barrier type coating is preferably in the range of 50 to 80% (Examples 4 to 6). When the porous film is thin and the ratio is 45%, the leakage current is high ( Comparative Example 3), and when the porous film is thick and the ratio is 85%, the amount of chemical electricity is increased ( Comparative Example 7).

[ポーラス型皮膜生成用化成液の比較]
さらに、表1から明らかなように、上記のポーラス型皮膜生成工程で用いる化成液は、硫酸以外に、シュウ酸、リン酸を用いた場合にも、上記と同様の効果を得ることができる(実施例11、12)。
[Comparison of chemical liquids for porous film formation]
Furthermore, as apparent from Table 1, the chemical conversion liquid used in the porous film forming step can obtain the same effect as described above even when oxalic acid or phosphoric acid is used in addition to sulfuric acid ( Examples 11 and 12).

上記実施例では、ポーラス型皮膜生成工程で用いる化成液として、硫酸、シュウ酸、リン酸を用いたが、これらを2種以上混合して用いることもできる。
また、上記実施例では、ポーラス型皮膜を生成した後のバリアー型皮膜生成工程において、ホウ酸とホウ酸アンモニウムを溶解した水溶液を用いたが、リン酸やリン酸塩の水溶液、アジピン酸やアジピン酸塩の水溶液を単独または混合して用いてもよい。
また、バリアー型皮膜生成工程において、所定の化成電圧まで到達した後、加熱処理や酸浸漬処理等のいわゆるデポラリゼーション処理と、修復化成とを繰り返して行ってもよい。
In the said Example, although the sulfuric acid, the oxalic acid, and phosphoric acid were used as a chemical conversion liquid used at a porous type | mold film | membrane production | generation process, these can also be used in mixture of 2 or more types.
In the above examples, an aqueous solution in which boric acid and ammonium borate were dissolved was used in the barrier type film forming step after the porous type film was formed. However, an aqueous solution of phosphoric acid or phosphate, adipic acid or adipine You may use the aqueous solution of an acid salt individually or in mixture.
Further, in the barrier-type film generation step, after reaching a predetermined formation voltage, so-called depolarization treatment such as heat treatment or acid immersion treatment and repair formation may be repeated.

Claims (1)

硫酸、シュウ酸およびリン酸のうち、少なくとも1種を含む化成液を用いてアルミニウム箔の表面にポーラス型皮膜を生成させるポーラス型皮膜生成工程と、
バリアー型皮膜を生成させるバリアー型皮膜生成工程と
を有し、
前記ポーラス型皮膜生成工程の前に、0.02〜0.20g/Lの水酸化ナトリウム水溶液による化学処理工程を設け
ポーラス型皮膜生成工程で生成させる皮膜厚さが、バリアー型皮膜厚さの50〜80%であることを特徴とする電解コンデンサ用電極箔の化成方法。
A porous film forming step of generating a porous film on the surface of the aluminum foil using a chemical conversion solution containing at least one of sulfuric acid, oxalic acid and phosphoric acid ;
A barrier type film generation step for generating a barrier type film,
Before the porous film production step, a chemical treatment step with 0.02 to 0.20 g / L sodium hydroxide aqueous solution is provided ,
A method for forming an electrode foil for an electrolytic capacitor , wherein the film thickness generated in the porous film forming step is 50 to 80% of the barrier film thickness .
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