JP4786541B2 - 表面をイオンビーム加工するための方法及び装置 - Google Patents
表面をイオンビーム加工するための方法及び装置 Download PDFInfo
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- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 112
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000003754 machining Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 238000012545 processing Methods 0.000 claims abstract description 32
- 238000009826 distribution Methods 0.000 claims description 8
- 230000033001 locomotion Effects 0.000 claims description 6
- 230000001133 acceleration Effects 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims 3
- 230000000694 effects Effects 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 16
- 239000010410 layer Substances 0.000 description 16
- 239000011159 matrix material Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000007735 ion beam assisted deposition Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
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- 230000003746 surface roughness Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- B82Y40/00—Manufacture or treatment of nanostructures
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- H01J37/02—Details
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- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
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- H01J2237/317—Processing objects on a microscale
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- Computer Hardware Design (AREA)
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- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
Description
Claims (4)
- イオンビーム源(1)が、イオンビームのイオン加速度、イオンエネルギー分布、イオン流密度及びイオン密度分布に関する所定の幾何学的なビーム特性を持つイオンビームを生成するのに必要な電気部品から構成され、そのイオンビーム源(1)のイオン放出開口部(10)から放出されるイオンビームに対向して基板を配置するとともに、イオンビームにより、基板表面の既知の特性パターンを部分的に加工して、新たな技術的に規定される特性パターンを形成する、基板表面のイオンビーム加工方法において、
これらの既知の特性パターンと新たな技術的に規定される特性パターンに応じて、並びに加工の進捗に応じて、幾何学的なビーム特性を変化させるか、イオンビームをパルス化するか、或いはその両方を実施することによって、その時々の基板(8)の表面(15)上におけるイオンビームの幾何学的な作用パターンを調節することとして、このイオンビームを少なくとも二つの個別のイオンビームから構成して、それらのビーム特性を同期して、又は互いに独立に制御するか、同時に、又は時間をずらしてパルス化するか、或いはその両方を実施することと、
加工が進捗する前と進捗している間の両方又は一方において、その時々の基板(8)の表面(15)上における幾何学的な作用パターンを、基板(8)の加工する表面(15)のレベルに配置したイオンビームセンサーアレイ(9)を用いて測定することと、
を特徴とする方法。 - 基板(8)とイオンビーム源(1)を互いに回転させるか、定形又は非定形の動きとして直線的、円形或いは技術的に所定の方向に動かすか、或いはその両方を実施することを特徴とする請求項1に記載のイオンビーム加工方法。
- 基板の加工する表面の面に対する垂線と表面に当たるイオンビームの軸との間の角度を変化させることを特徴とする請求項1又は2に記載のイオンビーム加工方法。
- 請求項1から3までのいずれか一つに記載の方法による基板表面のイオンビーム加工装置において、
イオンビーム源(1)が、イオンビームのイオン加速度、イオンエネルギー分布、イオン流密度及びイオン密度分布に関する所定の幾何学的なビーム特性を持つイオンビームを生成するのに必要な電気部品から構成されており、このイオンビーム源(1)が、少なくとも二つの個別のイオンビーム源から構成されて、これらの個別のイオンビームが、共同して、基板の表面上において、その時々のイオンビームの幾何学な作用パターンを形成することと、
少なくとも一つの基板(8)を保持するための基板支持体が、真空室内に有って、Y軸(4)とX軸(6)に関して動かすことができることと、
イオンビーム源(1)からのイオンビームの軸が、基板(8)の加工する表面(15)に対して垂直なZ軸(11)内に有るか、或いはZ軸に対して傾いた軸内に配置することができる形で、イオンビーム源(1)が真空室の壁面に保持されており、その場合に、イオンビーム源(1)と基板(8)の加工する表面(15)との間隔を固定とするか、或いは可変とすることが可能であることと、
加工が進捗する前と進捗している間の両方又は一方において、その時々の基板(8)の表面(15)上における幾何学的な作用パターンを測定するためのイオンビームセンサーアレイ(9)が、基板(8)の加工する表面(15)のレベルに配置されていることと、
を特徴とする装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10351059A DE10351059B4 (de) | 2003-10-31 | 2003-10-31 | Verfahren und Vorrichtung zur Ionenstrahlbearbeitung von Oberflächen |
DE10351059.1 | 2003-10-31 | ||
PCT/DE2004/002436 WO2005042141A2 (de) | 2003-10-31 | 2004-10-29 | Verfahren und vorrichtung zur ionenstrahlbearbeitung von oberflächen |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007513465A JP2007513465A (ja) | 2007-05-24 |
JP4786541B2 true JP4786541B2 (ja) | 2011-10-05 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2006537057A Expired - Fee Related JP4786541B2 (ja) | 2003-10-31 | 2004-10-29 | 表面をイオンビーム加工するための方法及び装置 |
Country Status (9)
Country | Link |
---|---|
US (1) | US8790498B2 (ja) |
EP (1) | EP1680800B1 (ja) |
JP (1) | JP4786541B2 (ja) |
KR (1) | KR101119282B1 (ja) |
CN (1) | CN1886818B (ja) |
AT (1) | ATE450881T1 (ja) |
DE (2) | DE10351059B4 (ja) |
PL (1) | PL1680800T3 (ja) |
WO (1) | WO2005042141A2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007048559B4 (de) * | 2007-10-09 | 2009-10-01 | Ntg Neue Technologien Gmbh & Co Kg | Vorrichtung zur Strahlbearbeitung von Werkstücken, Ionenstrahlbearbeitungsanlage |
CN101551527B (zh) * | 2009-05-07 | 2011-09-14 | 厦门美澜光电科技有限公司 | 光学基片隐形图案的制备方法 |
CN101559627B (zh) * | 2009-05-25 | 2011-12-14 | 天津大学 | 粒子束辅助单晶脆性材料超精密加工方法 |
DE102010040324B3 (de) | 2010-09-07 | 2012-05-10 | Asphericon Gmbh | Ionenstrahlvorrichtung zur Bearbeitung eines Substrats |
DE102011111686B4 (de) | 2011-08-26 | 2017-04-13 | Asphericon Gmbh | Verfahren zur Bearbeitung eines Substrats mittels eines Ionenstrahls und Ionenstrahlvorrichtung zur Bearbeitung eines Substrats |
US8502172B1 (en) * | 2012-06-26 | 2013-08-06 | Fei Company | Three dimensional fiducial |
DE102015214468A1 (de) | 2015-07-30 | 2016-07-28 | Carl Zeiss Smt Gmbh | Verfahren zum Bearbeiten eines Werkstücks bei der Herstellung eines optischen Elements |
KR101900334B1 (ko) | 2015-10-02 | 2018-09-20 | 캐논 아네르바 가부시키가이샤 | 이온 빔 에칭 방법 및 이온 빔 에칭 장치 |
US20170307839A1 (en) * | 2016-04-26 | 2017-10-26 | Ofs Fitel, Llc | Surface Treated Optical Fibers And Cables For Installation At Customer Premises |
DE102016119437B4 (de) * | 2016-10-12 | 2024-05-23 | scia Systems GmbH | Verfahren zum Bearbeiten einer Oberfläche mittels eines Teilchenstrahls |
DE102016119791A1 (de) * | 2016-10-18 | 2018-04-19 | scia Systems GmbH | Verfahren und Vorrichtung zum Bearbeiten einer Oberfläche eines Substrates mittels eines Teilchenstrahls |
DE102017209350A1 (de) | 2017-06-01 | 2017-08-03 | Carl Zeiss Smt Gmbh | Ionenstrahlbearbeitungsverfahren und vorrichtung hierfür |
CN110666596B (zh) * | 2019-09-02 | 2021-08-06 | 中国兵器科学研究院宁波分院 | 一种用于光学元件的定位及姿态调整装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63279552A (ja) * | 1987-05-11 | 1988-11-16 | Nissin Electric Co Ltd | イオンビ−ム照射装置 |
JPH04136857U (ja) * | 1991-06-12 | 1992-12-21 | 日新電機株式会社 | ビームプロフアイルモニタ |
JPH05287531A (ja) * | 1992-04-07 | 1993-11-02 | Toshiba Corp | 成膜方法およびその装置 |
JPH08206866A (ja) * | 1994-09-22 | 1996-08-13 | Ebara Corp | エネルギービーム加工法及びエネルギービーム加工装置 |
JPH08241841A (ja) * | 1995-03-03 | 1996-09-17 | Hitachi Ltd | パターンイオンビーム投射方法およびその装置 |
JP2001077058A (ja) * | 1999-09-08 | 2001-03-23 | Seiko Instruments Inc | 集束イオンビームを用いた加工方法 |
WO2002005315A2 (en) * | 2000-07-10 | 2002-01-17 | Epion Corporation | System and method for improving thin films by gas cluster ion be am processing |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE39724C (de) | J. RÖMHELD in Mainz | Mahlgang mit schwingendem walzenförmigem Mühlsteine | ||
US3699334A (en) * | 1969-06-16 | 1972-10-17 | Kollsman Instr Corp | Apparatus using a beam of positive ions for controlled erosion of surfaces |
DD298750A5 (de) | 1990-04-09 | 1992-03-12 | Veb Carl Zeiss Jena,De | Verfahren zur steuerung der ionenstrahlbearbeitung von festkoerperoberflaechen |
JP2886649B2 (ja) * | 1990-09-27 | 1999-04-26 | 株式会社日立製作所 | イオンビーム加工方法及びその装置 |
JPH0613013A (ja) * | 1992-06-29 | 1994-01-21 | Sumitomo Electric Ind Ltd | イオンビームを集束して加工を行う装置 |
JPH10321175A (ja) * | 1997-05-20 | 1998-12-04 | Kobe Steel Ltd | イオンビーム発生装置 |
DE19814760A1 (de) * | 1998-04-02 | 1999-10-07 | Inst Oberflaechenmodifizierung | Verfahren zur Ionenstrahlbearbeitung von Festkörperoberflächen bei rechteckförmigem Strahlquerschnitt |
RU2173003C2 (ru) * | 1999-11-25 | 2001-08-27 | Септре Электроникс Лимитед | Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств |
JP4647820B2 (ja) | 2001-04-23 | 2011-03-09 | キヤノン株式会社 | 荷電粒子線描画装置、および、デバイスの製造方法 |
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2003
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2004
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- 2004-10-29 DE DE502004010464T patent/DE502004010464D1/de not_active Expired - Lifetime
- 2004-10-29 KR KR1020067010573A patent/KR101119282B1/ko active IP Right Grant
- 2004-10-29 EP EP04802669A patent/EP1680800B1/de not_active Expired - Lifetime
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- 2004-10-29 PL PL04802669T patent/PL1680800T3/pl unknown
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63279552A (ja) * | 1987-05-11 | 1988-11-16 | Nissin Electric Co Ltd | イオンビ−ム照射装置 |
JPH04136857U (ja) * | 1991-06-12 | 1992-12-21 | 日新電機株式会社 | ビームプロフアイルモニタ |
JPH05287531A (ja) * | 1992-04-07 | 1993-11-02 | Toshiba Corp | 成膜方法およびその装置 |
JPH08206866A (ja) * | 1994-09-22 | 1996-08-13 | Ebara Corp | エネルギービーム加工法及びエネルギービーム加工装置 |
JPH08241841A (ja) * | 1995-03-03 | 1996-09-17 | Hitachi Ltd | パターンイオンビーム投射方法およびその装置 |
JP2001077058A (ja) * | 1999-09-08 | 2001-03-23 | Seiko Instruments Inc | 集束イオンビームを用いた加工方法 |
WO2002005315A2 (en) * | 2000-07-10 | 2002-01-17 | Epion Corporation | System and method for improving thin films by gas cluster ion be am processing |
Also Published As
Publication number | Publication date |
---|---|
WO2005042141A2 (de) | 2005-05-12 |
US8790498B2 (en) | 2014-07-29 |
US20080110745A1 (en) | 2008-05-15 |
WO2005042141A3 (de) | 2005-10-13 |
CN1886818A (zh) | 2006-12-27 |
DE10351059A1 (de) | 2005-06-16 |
EP1680800A2 (de) | 2006-07-19 |
DE502004010464D1 (de) | 2010-01-14 |
CN1886818B (zh) | 2010-10-06 |
JP2007513465A (ja) | 2007-05-24 |
PL1680800T3 (pl) | 2010-07-30 |
EP1680800B1 (de) | 2009-12-02 |
ATE450881T1 (de) | 2009-12-15 |
KR101119282B1 (ko) | 2012-03-15 |
KR20060105011A (ko) | 2006-10-09 |
DE10351059B4 (de) | 2007-03-01 |
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