JP4785396B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4785396B2
JP4785396B2 JP2005085195A JP2005085195A JP4785396B2 JP 4785396 B2 JP4785396 B2 JP 4785396B2 JP 2005085195 A JP2005085195 A JP 2005085195A JP 2005085195 A JP2005085195 A JP 2005085195A JP 4785396 B2 JP4785396 B2 JP 4785396B2
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layer
gate
insulating layer
forming
region
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Expired - Fee Related
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JP2005085195A
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Japanese (ja)
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JP2005311341A (ja
JP2005311341A5 (enExample
Inventor
慎志 前川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005085195A priority Critical patent/JP4785396B2/ja
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Publication of JP2005311341A5 publication Critical patent/JP2005311341A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2005085195A 2004-03-26 2005-03-24 半導体装置の作製方法 Expired - Fee Related JP4785396B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005085195A JP4785396B2 (ja) 2004-03-26 2005-03-24 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004091223 2004-03-26
JP2004091223 2004-03-26
JP2005085195A JP4785396B2 (ja) 2004-03-26 2005-03-24 半導体装置の作製方法

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JP2005311341A JP2005311341A (ja) 2005-11-04
JP2005311341A5 JP2005311341A5 (enExample) 2008-05-01
JP4785396B2 true JP4785396B2 (ja) 2011-10-05

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JP2005085195A Expired - Fee Related JP4785396B2 (ja) 2004-03-26 2005-03-24 半導体装置の作製方法

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101243809B1 (ko) 2006-06-30 2013-03-18 엘지디스플레이 주식회사 박막트랜지스터의 제조방법 및 이를 이용한 ｔｆｔ 어레이기판의 제조방법
WO2010058581A1 (ja) * 2008-11-20 2010-05-27 シャープ株式会社 シフトレジスタ
WO2011027723A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011033911A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9466725B2 (en) * 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11674919B2 (en) * 2019-07-17 2023-06-13 Taiwan Semiconductor Manufacturing Company Ltd. Detector, detection device and method of using the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165127A (ja) * 1987-12-22 1989-06-29 Nippon Telegr & Teleph Corp <Ntt> 表面平坦化法
JPH05341321A (ja) * 1992-06-12 1993-12-24 Matsushita Electric Ind Co Ltd アクティブマトリクス基板の製造方法

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JP2005311341A (ja) 2005-11-04

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