JP2005311341A5 - - Google Patents

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Publication number
JP2005311341A5
JP2005311341A5 JP2005085195A JP2005085195A JP2005311341A5 JP 2005311341 A5 JP2005311341 A5 JP 2005311341A5 JP 2005085195 A JP2005085195 A JP 2005085195A JP 2005085195 A JP2005085195 A JP 2005085195A JP 2005311341 A5 JP2005311341 A5 JP 2005311341A5
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JP
Japan
Prior art keywords
insulating layer
layer
conductive
conductive layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005085195A
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English (en)
Japanese (ja)
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JP2005311341A (ja
JP4785396B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2005085195A priority Critical patent/JP4785396B2/ja
Priority claimed from JP2005085195A external-priority patent/JP4785396B2/ja
Publication of JP2005311341A publication Critical patent/JP2005311341A/ja
Publication of JP2005311341A5 publication Critical patent/JP2005311341A5/ja
Application granted granted Critical
Publication of JP4785396B2 publication Critical patent/JP4785396B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005085195A 2004-03-26 2005-03-24 半導体装置の作製方法 Expired - Fee Related JP4785396B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005085195A JP4785396B2 (ja) 2004-03-26 2005-03-24 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004091223 2004-03-26
JP2004091223 2004-03-26
JP2005085195A JP4785396B2 (ja) 2004-03-26 2005-03-24 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005311341A JP2005311341A (ja) 2005-11-04
JP2005311341A5 true JP2005311341A5 (enExample) 2008-05-01
JP4785396B2 JP4785396B2 (ja) 2011-10-05

Family

ID=35439689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005085195A Expired - Fee Related JP4785396B2 (ja) 2004-03-26 2005-03-24 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4785396B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101243809B1 (ko) 2006-06-30 2013-03-18 엘지디스플레이 주식회사 박막트랜지스터의 제조방법 및 이를 이용한 ｔｆｔ 어레이기판의 제조방법
WO2010058581A1 (ja) * 2008-11-20 2010-05-27 シャープ株式会社 シフトレジスタ
WO2011027723A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011033911A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9466725B2 (en) * 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11674919B2 (en) * 2019-07-17 2023-06-13 Taiwan Semiconductor Manufacturing Company Ltd. Detector, detection device and method of using the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165127A (ja) * 1987-12-22 1989-06-29 Nippon Telegr & Teleph Corp <Ntt> 表面平坦化法
JPH05341321A (ja) * 1992-06-12 1993-12-24 Matsushita Electric Ind Co Ltd アクティブマトリクス基板の製造方法

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