JP4782550B2 - 有機電界発光素子の製造方法 - Google Patents
有機電界発光素子の製造方法 Download PDFInfo
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- JP4782550B2 JP4782550B2 JP2005339514A JP2005339514A JP4782550B2 JP 4782550 B2 JP4782550 B2 JP 4782550B2 JP 2005339514 A JP2005339514 A JP 2005339514A JP 2005339514 A JP2005339514 A JP 2005339514A JP 4782550 B2 JP4782550 B2 JP 4782550B2
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- 238000000034 method Methods 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims description 22
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 7
- 238000007664 blowing Methods 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims 2
- 239000000463 material Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000011575 calcium Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 2
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 2
- 229910016036 BaF 2 Inorganic materials 0.000 description 2
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 2
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Inorganic materials [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
正極は、コーニング 15Ω/cm2(1600Å)ITOガラス基板を50mmx50mmx0.7mmのサイズに切って、イソプロピルアルコール及び純水の中で5分間超音波洗浄した後、30分間UV、オゾン洗浄して使用した。
HILに対して電子シャワー処理、ブローイング処理、及び焼成処理を行っていない点を除いては、実施例1と同じ方法で従来技術に係る有機EL素子を製造した。
図3に示すように、寿命曲線には、初期に輝度が速く減少する部分と、次いで遅く減少する部分とが観察されるが、初期に輝度が速く減少する部分において、電子シャワーを施した曲線と、電子シャワーを施していない曲線との輝度差が確実であるということが分かる。しかし、輝度が遅く減少する部分では、ほぼ同じ傾斜が観察されるが、これは、電子シャワーによりHILのPEDOTの表面にあった初期の電気的に不安定な部分が除去されたことが原因として作用したと判断される。
12 正極、
13 HIL、
14 HTL、
15 EML、
16 ETL、
17 EIL、
18 負極、
21 電子放出源、
22 電子放出経路、
23 電子放出経路から離れた位置、
24 基板、
25 HIL、
26 変形HIL。
Claims (5)
- 基板上に正極を形成する工程と、
前記正極上に有機物からなる正孔注入層を形成する工程と、
前記正孔注入層に対して電子シャワー処理を行う工程と、
前記正孔注入層上に発光層を形成する工程と、
前記発光層上に負極を形成する工程と、を含み、
前記電子シャワー処理は、側面シャワー方式によって行われたことを特徴とする有機電界発光素子の製造方法。 - 前記電子シャワー処理において、前記電子のエネルギーは、10eVないし100eVであることを特徴とする請求項1に記載の有機電界発光素子の製造方法。
- 前記電子シャワー処理において、処理時間は、前記正孔注入層の表面抵抗の増加が初期値に対して10%以内になるように調節されることを特徴とする請求項1または2に記載の有機電界発光素子の製造方法。
- 前記電子シャワー処理は、窒素雰囲気下でのブローイング処理を含むことを特徴とする請求項1〜3のいずれかに記載の有機電界発光素子の製造方法。
- 前記電子シャワー処理は、真空または窒素雰囲気下での焼成処理を含むことを特徴とする請求項1〜3のいずれかに記載の有機電界発光素子の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0001949 | 2005-01-08 | ||
KR1020050001949A KR101097300B1 (ko) | 2005-01-08 | 2005-01-08 | 전자 샤워 처리된 정공 주입층을 포함하는 유기 전계 발광소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006190654A JP2006190654A (ja) | 2006-07-20 |
JP4782550B2 true JP4782550B2 (ja) | 2011-09-28 |
Family
ID=36652603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005339514A Active JP4782550B2 (ja) | 2005-01-08 | 2005-11-24 | 有機電界発光素子の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7485481B2 (ja) |
JP (1) | JP4782550B2 (ja) |
KR (1) | KR101097300B1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8049408B2 (en) * | 2004-08-10 | 2011-11-01 | Cambridge Display Technology Limited | Light emissive device having electrode comprising a metal and a material which is codepositable with the metal |
JP4629715B2 (ja) * | 2006-12-06 | 2011-02-09 | 韓國電子通信研究院 | Oled素子 |
KR100841369B1 (ko) * | 2006-12-18 | 2008-06-26 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
KR101434358B1 (ko) * | 2007-07-24 | 2014-09-23 | 삼성디스플레이 주식회사 | 백색 유기발광소자 |
JP5402472B2 (ja) * | 2008-09-30 | 2014-01-29 | 三菱化学株式会社 | 有機薄膜パターニング用基板、有機電界発光素子およびその製造方法、並びに有機el表示装置および有機el照明 |
KR20130022986A (ko) * | 2011-08-26 | 2013-03-07 | 엘지디스플레이 주식회사 | 유기전계 발광표시장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3268741B2 (ja) * | 1997-08-26 | 2002-03-25 | 住友重機械工業株式会社 | 電子線照射装置 |
JP4505067B2 (ja) * | 1998-12-16 | 2010-07-14 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
JP2001345182A (ja) | 2000-05-31 | 2001-12-14 | Fuji Xerox Co Ltd | 電界発光素子 |
JP4852224B2 (ja) * | 2002-07-30 | 2012-01-11 | セイコーエプソン株式会社 | 有機el装置の製造装置 |
JP2004071395A (ja) * | 2002-08-07 | 2004-03-04 | Seiko Epson Corp | 電気光学装置及びその製造方法、並びに電子機器 |
JP2004111241A (ja) * | 2002-09-19 | 2004-04-08 | Casio Comput Co Ltd | El素子、el素子を用いた発光パネル及びel素子の製造方法 |
JP2004349224A (ja) * | 2003-03-24 | 2004-12-09 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子、表示装置および照明装置 |
-
2005
- 2005-01-08 KR KR1020050001949A patent/KR101097300B1/ko active IP Right Grant
- 2005-11-24 JP JP2005339514A patent/JP4782550B2/ja active Active
- 2005-12-14 US US11/302,448 patent/US7485481B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7485481B2 (en) | 2009-02-03 |
US20060152152A1 (en) | 2006-07-13 |
KR20060081299A (ko) | 2006-07-12 |
KR101097300B1 (ko) | 2011-12-23 |
JP2006190654A (ja) | 2006-07-20 |
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