JP2006114918A - 有機発光素子,有機発光表示装置 - Google Patents
有機発光素子,有機発光表示装置 Download PDFInfo
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- JP2006114918A JP2006114918A JP2005301365A JP2005301365A JP2006114918A JP 2006114918 A JP2006114918 A JP 2006114918A JP 2005301365 A JP2005301365 A JP 2005301365A JP 2005301365 A JP2005301365 A JP 2005301365A JP 2006114918 A JP2006114918 A JP 2006114918A
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- organic light
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- hole injection
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- 238000002347 injection Methods 0.000 claims abstract description 52
- 239000007924 injection Substances 0.000 claims abstract description 52
- 230000005525 hole transport Effects 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 27
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims description 5
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 claims description 4
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 claims description 4
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 claims description 3
- 238000004776 molecular orbital Methods 0.000 claims description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 claims description 3
- 239000000243 solution Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 130
- 239000010408 film Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 21
- 230000000903 blocking effect Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 1
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Inorganic materials [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- JVZRCNQLWOELDU-UHFFFAOYSA-N gamma-Phenylpyridine Natural products C1=CC=CC=C1C1=CC=NC=C1 JVZRCNQLWOELDU-UHFFFAOYSA-N 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】有機発光素子は,第1電極,正孔注入層,正孔輸送層,発光層および第2電極を含み,正孔注入層と正孔輸送層の厚さ比が1:1〜1:10であることを特徴とする。
【選択図】図3
Description
bias)状態における漏れ電流(loff)が大きい場合,ブラックカラーを正しく表現することができず,素子特性のテスト容易性が低下するという問題点があった。
アノードは,コーニング(Corning)15Ω/cm2(1200Å)のITOガラス基板を50mm×50mm×0.7mmのサイズに切ってイソプロピルアルコールと純水中で各5分間超音波洗浄した後,30分間UV,オゾン洗浄して使用した。
正孔注入層と正孔輸送層の厚さ比を1:1とした以外は,実施例1と同様の方法で行って有機発光素子を完成した。
正孔注入層と正孔輸送層の厚さ比を1:10とした以外は,実施例1と同様の方法によって行って有機発光素子を完成した。
正孔注入層と正孔輸送層の厚さ比を8:2とした以外は,実施例1と同様の方法によって行って有機発光素子を完成した。
正孔注入層と正孔輸送層の厚さ比を1:0.5とした以外は,実施例1と同様の方法によって行って有機発光素子を完成した。
正孔注入層と正孔輸送層の厚さ比を1:10.5とした以外は,実施例1と同様の方法によって行って有機発光素子を完成した。
11 バッファ層
21 有機発光素子の第1電極層
22 有機発光層
23 第2電極層
31 半導体活性層
32 ゲート絶縁膜
33 ゲート電極
34 層間絶縁膜
34a コンタクトホール
35 ソース/ドレイン電極
36 平坦化膜
36a ビアホール
37 画素定義膜
37a 開口
Claims (9)
- 第1電極,正孔注入層,正孔輸送層,発光層および第2電極を含み,
前記正孔注入層と前記正孔輸送層の厚さ比が1:1〜1:10であることを特徴とする,有機発光素子。 - 前記正孔注入層と前記正孔輸送層の厚さ比が1:4〜1:8であることを特徴とする,請求項1に記載の有機発光素子。
- 前記正孔注入層の厚さが50〜800Åであり,前記正孔輸送層の厚さが50〜1500Åであることを特徴とする,請求項1に記載の有機発光素子。
- 前記正孔注入層が,移動度1e―3cm2/Vs以上,LUMO(Lowest
Unoccupied Molecular Orbital)エネルギー準位2.7eV以下,HOMO(Highest Occupied Molecular Orbital)エネルギー準位5.0eV以上の正孔注入物質からなることを特徴とする,請求項1に記載の有機発光素子。 - 前記正孔注入物質が銅フタロシアニンまたは下記構造式のm−TDATAであることを特徴とする,請求項4に記載の有機発光素子。
- 前記正孔輸送層が,移動度1e―4cm2/Vs以上,LUMOエネルギー準位3.3eV以下,HOMOエネルギー準位5.0eV以上の正孔輸送物質からなることを特徴とする,請求項1に記載の有機発光素子。
- 前記正孔輸送物質が,N,N’−ビス(3−メチルフェニル)−N,N’−ジフェニル−[1,1−ビフェニル]−4,4’−ジアミン(TPD),またはN,N’−ジ(ナフタレン−1−イル)−N,N’−ジフェニルベンジジン(NPB)であることを特徴とする,請求項5に記載の有機発光素子。
- 前記発光層がリン光材料を含むことを特徴とする,請求項1に記載の有機発光素子。
- 請求項1〜8のいずれか1項に記載の有機発光素子を備えたことを特徴とする,有機発光表示装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040082570A KR100759548B1 (ko) | 2004-10-15 | 2004-10-15 | 유기 전계 발광 소자 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006114918A true JP2006114918A (ja) | 2006-04-27 |
Family
ID=36181130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005301365A Pending JP2006114918A (ja) | 2004-10-15 | 2005-10-17 | 有機発光素子,有機発光表示装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20060083946A1 (ja) |
JP (1) | JP2006114918A (ja) |
KR (1) | KR100759548B1 (ja) |
CN (1) | CN1783531A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007145129A1 (ja) * | 2006-06-13 | 2007-12-21 | Konica Minolta Holdings, Inc. | 有機エレクトロルミネッセンス素子、照明装置及び表示装置 |
JPWO2007132678A1 (ja) * | 2006-05-11 | 2009-09-24 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2075860A3 (en) * | 2007-12-28 | 2013-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device and electronic device |
KR101520285B1 (ko) | 2008-05-16 | 2015-05-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광소자 및 전자기기 |
KR101582938B1 (ko) * | 2008-11-20 | 2016-01-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US8841152B2 (en) * | 2011-05-19 | 2014-09-23 | Massachusetts Institute Of Technology | Method of lift-off patterning thin films in situ employing phase change resists |
KR102083434B1 (ko) * | 2013-09-04 | 2020-03-03 | 삼성디스플레이 주식회사 | 유기 발광 장치 및 그 제조 방법 |
KR102620085B1 (ko) * | 2016-07-29 | 2024-01-02 | 엘지디스플레이 주식회사 | 유기 발광 소자 및 이를 이용한 유기 발광 표시 장치 |
KR102639784B1 (ko) * | 2016-10-25 | 2024-02-26 | 삼성디스플레이 주식회사 | 모노아민 화합물 및 이를 포함하는 유기 전계 발광 소자 |
CN115039247A (zh) * | 2021-01-04 | 2022-09-09 | 京东方科技集团股份有限公司 | 有机发光器件、发光基板和发光装置 |
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KR20010060821A (ko) * | 1999-12-28 | 2001-07-07 | 박종섭 | 유기전계발광표시소자의 구조 |
JP2001313177A (ja) * | 2000-04-28 | 2001-11-09 | Pioneer Electronic Corp | 有機エレクトロルミネッセンス素子 |
US6864628B2 (en) * | 2000-08-28 | 2005-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device comprising light-emitting layer having triplet compound and light-emitting layer having singlet compound |
SG2009086778A (en) * | 2000-12-28 | 2016-11-29 | Semiconductor Energy Lab Co Ltd | Luminescent device |
US6949878B2 (en) * | 2001-08-28 | 2005-09-27 | Konica Corporation | Multicolor light emission apparatus with multiple different wavelength organic elements |
US20040132228A1 (en) * | 2002-12-17 | 2004-07-08 | Honeywell International Inc. | Method and system for fabricating an OLED |
KR100560785B1 (ko) | 2003-02-03 | 2006-03-13 | 삼성에스디아이 주식회사 | 저전압에서 구동되는 유기 전계 발광 소자 |
US7029765B2 (en) * | 2003-04-22 | 2006-04-18 | Universal Display Corporation | Organic light emitting devices having reduced pixel shrinkage |
KR100495594B1 (ko) * | 2003-05-23 | 2005-06-14 | 주식회사 비스톰 | 3원색광을 이용한 백색 유기 전계 발광 소자 |
KR20040066781A (ko) * | 2004-07-08 | 2004-07-27 | 우경순 | 유기발광소자의 제조방법 |
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- 2005-10-14 CN CNA2005101315067A patent/CN1783531A/zh active Pending
- 2005-10-17 JP JP2005301365A patent/JP2006114918A/ja active Pending
Cited By (4)
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JPWO2007132678A1 (ja) * | 2006-05-11 | 2009-09-24 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
JP5432523B2 (ja) * | 2006-05-11 | 2014-03-05 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
WO2007145129A1 (ja) * | 2006-06-13 | 2007-12-21 | Konica Minolta Holdings, Inc. | 有機エレクトロルミネッセンス素子、照明装置及び表示装置 |
JPWO2007145129A1 (ja) * | 2006-06-13 | 2009-10-29 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子、照明装置及び表示装置 |
Also Published As
Publication number | Publication date |
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CN1783531A (zh) | 2006-06-07 |
KR100759548B1 (ko) | 2007-09-18 |
KR20060033448A (ko) | 2006-04-19 |
US20060083946A1 (en) | 2006-04-20 |
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