JP4776773B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4776773B2
JP4776773B2 JP2000370961A JP2000370961A JP4776773B2 JP 4776773 B2 JP4776773 B2 JP 4776773B2 JP 2000370961 A JP2000370961 A JP 2000370961A JP 2000370961 A JP2000370961 A JP 2000370961A JP 4776773 B2 JP4776773 B2 JP 4776773B2
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Japan
Prior art keywords
film
island
insulating film
shaped
semiconductor film
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Expired - Fee Related
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JP2000370961A
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English (en)
Japanese (ja)
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JP2001230420A (ja
JP2001230420A5 (da
Inventor
律子 河崎
健司 笠原
久 大谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000370961A priority Critical patent/JP4776773B2/ja
Publication of JP2001230420A publication Critical patent/JP2001230420A/ja
Publication of JP2001230420A5 publication Critical patent/JP2001230420A5/ja
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Publication of JP4776773B2 publication Critical patent/JP4776773B2/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000370961A 1999-12-10 2000-12-06 半導体装置の作製方法 Expired - Fee Related JP4776773B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000370961A JP4776773B2 (ja) 1999-12-10 2000-12-06 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP11-351060 1999-12-10
JP1999351060 1999-12-10
JP35106099 1999-12-10
JP2000370961A JP4776773B2 (ja) 1999-12-10 2000-12-06 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001230420A JP2001230420A (ja) 2001-08-24
JP2001230420A5 JP2001230420A5 (da) 2007-12-20
JP4776773B2 true JP4776773B2 (ja) 2011-09-21

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JP2000370961A Expired - Fee Related JP4776773B2 (ja) 1999-12-10 2000-12-06 半導体装置の作製方法

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JP (1) JP4776773B2 (da)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3810725B2 (ja) * 2001-09-21 2006-08-16 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP4141307B2 (ja) * 2002-03-15 2008-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004087682A (ja) * 2002-08-26 2004-03-18 Chi Mei Electronics Corp 薄膜トランジスタ、画像表示素子および画像表示装置
KR100749478B1 (ko) * 2006-11-21 2007-08-14 삼성에스디아이 주식회사 고상 결정화 장치 및 이를 이용한 박막 트랜지스터의 제조방법
JP2008252068A (ja) * 2007-03-08 2008-10-16 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP5371144B2 (ja) 2007-06-29 2013-12-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法、並びに電子機器
US9105749B2 (en) * 2011-05-13 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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JP2001230420A (ja) 2001-08-24

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