JP4776773B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP4776773B2 JP4776773B2 JP2000370961A JP2000370961A JP4776773B2 JP 4776773 B2 JP4776773 B2 JP 4776773B2 JP 2000370961 A JP2000370961 A JP 2000370961A JP 2000370961 A JP2000370961 A JP 2000370961A JP 4776773 B2 JP4776773 B2 JP 4776773B2
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- JP
- Japan
- Prior art keywords
- film
- island
- insulating film
- shaped
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000370961A JP4776773B2 (ja) | 1999-12-10 | 2000-12-06 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35106099 | 1999-12-10 | ||
JP1999351060 | 1999-12-10 | ||
JP11-351060 | 1999-12-10 | ||
JP2000370961A JP4776773B2 (ja) | 1999-12-10 | 2000-12-06 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2001230420A JP2001230420A (ja) | 2001-08-24 |
JP2001230420A5 JP2001230420A5 (cs) | 2007-12-20 |
JP4776773B2 true JP4776773B2 (ja) | 2011-09-21 |
Family
ID=26579315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000370961A Expired - Fee Related JP4776773B2 (ja) | 1999-12-10 | 2000-12-06 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
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JP (1) | JP4776773B2 (cs) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3810725B2 (ja) * | 2001-09-21 | 2006-08-16 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
JP4141307B2 (ja) * | 2002-03-15 | 2008-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2004087682A (ja) * | 2002-08-26 | 2004-03-18 | Chi Mei Electronics Corp | 薄膜トランジスタ、画像表示素子および画像表示装置 |
KR100749478B1 (ko) * | 2006-11-21 | 2007-08-14 | 삼성에스디아이 주식회사 | 고상 결정화 장치 및 이를 이용한 박막 트랜지스터의 제조방법 |
JP2008252068A (ja) | 2007-03-08 | 2008-10-16 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP5371144B2 (ja) | 2007-06-29 | 2013-12-18 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法、並びに電子機器 |
US9105749B2 (en) * | 2011-05-13 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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2000
- 2000-12-06 JP JP2000370961A patent/JP4776773B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2001230420A (ja) | 2001-08-24 |
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