JP4772228B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP4772228B2
JP4772228B2 JP2001223863A JP2001223863A JP4772228B2 JP 4772228 B2 JP4772228 B2 JP 4772228B2 JP 2001223863 A JP2001223863 A JP 2001223863A JP 2001223863 A JP2001223863 A JP 2001223863A JP 4772228 B2 JP4772228 B2 JP 4772228B2
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Japan
Prior art keywords
conductive layer
tft
layer
insulating film
semiconductor layer
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Expired - Fee Related
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JP2001223863A
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Japanese (ja)
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JP2002141168A5 (https=
JP2002141168A (ja
Inventor
悦子 藤本
智史 村上
和隆 犬飼
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001223863A priority Critical patent/JP4772228B2/ja
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Publication of JP2002141168A5 publication Critical patent/JP2002141168A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2001223863A 2000-07-31 2001-07-25 発光装置の作製方法 Expired - Fee Related JP4772228B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001223863A JP4772228B2 (ja) 2000-07-31 2001-07-25 発光装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000232431 2000-07-31
JP2000-232431 2000-07-31
JP2000232431 2000-07-31
JP2001223863A JP4772228B2 (ja) 2000-07-31 2001-07-25 発光装置の作製方法

Publications (3)

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JP2002141168A JP2002141168A (ja) 2002-05-17
JP2002141168A5 JP2002141168A5 (https=) 2008-09-11
JP4772228B2 true JP4772228B2 (ja) 2011-09-14

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JP2001223863A Expired - Fee Related JP4772228B2 (ja) 2000-07-31 2001-07-25 発光装置の作製方法

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JP (1) JP4772228B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3778176B2 (ja) 2002-05-28 2006-05-24 セイコーエプソン株式会社 発光装置および電子機器
WO2004086343A1 (ja) * 2003-03-26 2004-10-07 Semiconductor Energy Laboratory Co., Ltd. 素子基板及び発光装置
JP2009010242A (ja) * 2007-06-29 2009-01-15 Mitsubishi Electric Corp 表示装置及びその製造方法
CN112396745B (zh) * 2019-07-30 2023-09-19 中移物联网有限公司 一种闸机控制方法及电子设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6462722B1 (en) * 1997-02-17 2002-10-08 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
US5952789A (en) * 1997-04-14 1999-09-14 Sarnoff Corporation Active matrix organic light emitting diode (amoled) display pixel structure and data load/illuminate circuit therefor
JP3282582B2 (ja) * 1998-04-21 2002-05-13 日本電気株式会社 トップゲート型薄膜トランジスタ及びその製造方法
JP3883706B2 (ja) * 1998-07-31 2007-02-21 シャープ株式会社 エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法
JP4008133B2 (ja) * 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置

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JP2002141168A (ja) 2002-05-17

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