JP4767013B2 - 光センサ - Google Patents
光センサ Download PDFInfo
- Publication number
- JP4767013B2 JP4767013B2 JP2005505182A JP2005505182A JP4767013B2 JP 4767013 B2 JP4767013 B2 JP 4767013B2 JP 2005505182 A JP2005505182 A JP 2005505182A JP 2005505182 A JP2005505182 A JP 2005505182A JP 4767013 B2 JP4767013 B2 JP 4767013B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- detection element
- light
- display
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 238000001514 detection method Methods 0.000 claims description 183
- 239000010408 film Substances 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 52
- 239000004065 semiconductor Substances 0.000 claims description 32
- 238000004891 communication Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 238000010295 mobile communication Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910002064 alloy oxide Inorganic materials 0.000 claims description 2
- 239000012788 optical film Substances 0.000 claims 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims 1
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- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 description 3
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 3
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
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- 150000002894 organic compounds Chemical class 0.000 description 3
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- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 3
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 2
- UOCMXZLNHQBBOS-UHFFFAOYSA-N 2-(1,3-benzoxazol-2-yl)phenol zinc Chemical compound [Zn].Oc1ccccc1-c1nc2ccccc2o1.Oc1ccccc1-c1nc2ccccc2o1 UOCMXZLNHQBBOS-UHFFFAOYSA-N 0.000 description 2
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
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- 238000003825 pressing Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- VFMUXPQZKOKPOF-UHFFFAOYSA-N 2,3,7,8,12,13,17,18-octaethyl-21,23-dihydroporphyrin platinum Chemical compound [Pt].CCc1c(CC)c2cc3[nH]c(cc4nc(cc5[nH]c(cc1n2)c(CC)c5CC)c(CC)c4CC)c(CC)c3CC VFMUXPQZKOKPOF-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- UPSWHSOSMRAWEH-UHFFFAOYSA-N 2-n,3-n,4-n-tris(3-methylphenyl)-1-n,1-n,2-n,3-n,4-n-pentakis-phenylbenzene-1,2,3,4-tetramine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=C(N(C=3C=CC=CC=3)C=3C=C(C)C=CC=3)C(N(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 UPSWHSOSMRAWEH-UHFFFAOYSA-N 0.000 description 1
- FZYKBLSPMPIYKD-UHFFFAOYSA-N 5-(4-phenylphenyl)-1h-1,2,4-triazole Chemical compound C1=NNC(C=2C=CC(=CC=2)C=2C=CC=CC=2)=N1 FZYKBLSPMPIYKD-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- RXIOWEOEQRQRIX-UHFFFAOYSA-N C(C)(C)(C)C1=CC=C(C=C1)N1N=NC=C1C1=CC=C(C=C1)CC Chemical class C(C)(C)(C)C1=CC=C(C=C1)N1N=NC=C1C1=CC=C(C=C1)CC RXIOWEOEQRQRIX-UHFFFAOYSA-N 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical group C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 1
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 1
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- 239000000412 dendrimer Substances 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
- 230000006353 environmental stress Effects 0.000 description 1
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- 239000007850 fluorescent dye Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 150000005041 phenanthrolines Chemical class 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920006375 polyphtalamide Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0204—Compact construction
- G01J1/0209—Monolithic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0233—Handheld
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0247—Details using a charging unit
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0271—Housings; Attachments or accessories for photometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4204—Photometry, e.g. photographic exposure meter using electric radiation detectors with determination of ambient light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13318—Circuits comprising a photodetector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133342—Constructional arrangements; Manufacturing methods for double-sided displays
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/04—Display device controller operating with a plurality of display units
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/0206—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings
- H04M1/0208—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings characterized by the relative motions of the body parts
- H04M1/0214—Foldable telephones, i.e. with body parts pivoting to an open position around an axis parallel to the plane they define in closed position
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/0206—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings
- H04M1/0241—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings using relative motion of the body parts to change the operational status of the telephone set, e.g. switching on/off, answering incoming call
- H04M1/0245—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings using relative motion of the body parts to change the operational status of the telephone set, e.g. switching on/off, answering incoming call using open/close detection
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M2250/00—Details of telephonic subscriber devices
- H04M2250/12—Details of telephonic subscriber devices including a sensor for measuring a physical value, e.g. temperature or motion
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- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Telephone Set Structure (AREA)
- Telephone Function (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Description
図5は、本発明にかかる携帯電話機の概観図であり、図5(A)は、筺体が開いた状態の斜視図、図5(B)は同様のものの閉じた状態の斜視図であって、第2の表示部802が設けられている第1の筐体800a側から見た斜視図である。
本実施の形態では、実施の形態1とは構造の異なる光センサ及びそれを有する携帯通信機器並びにその表示方法について説明する。本実施の形態においても、携帯通信機器の代表例として携帯電話機を用い、実施の形態1と同様の部分は、同じ符号を付して詳細の説明を省略する。
本実施の形態では、光センサの設置場所の異なる折り畳み式携帯通信機器について説明する。本実施の形態においても、携帯通信機器の代表例として携帯電話機を用い、実施の形態1と同様の部分は、同じ符号を付して詳細の説明を省略する。
本実施の形態では、両面に表示することが可能な表示装置を有する携帯通信機器について、図1、図5、図13、図15(A)(B)及び図16(A)(B)を用いて説明する。本実施の形態においても、携帯通信機器の代表例として携帯電話機を用い、実施の形態1と同様の部分は、同じ符号を付して詳細の説明を省略する。
本実施の形態では、図14に示すような両面に表示することが可能な表示装置を有する携帯通信機器について図2、図5及び図14を用いて説明する。本実施の形態においても、携帯通信機器の代表例として携帯電話機を用い、実施の形態2と同様の部分は、同じ符号を付して詳細の説明を省略する。
Claims (9)
- 透光性を有する基板上に、第1の検出素子と第2の検出素子とを有し、
前記第1の検出素子は、前記基板上の第1の電極と、前記第1の電極上の第1の半導体膜と、前記第1の半導体膜の一部の上に設けられ且つ遮光機能を有する第2の電極と、を有し、
前記第2の検出素子は、前記第1の電極と、前記第1の半導体膜及び前記第2の電極上の第2の半導体膜と、前記第2の半導体膜上の第3の電極と、を有し、
前記第2の検出素子は、前記基板の表面側から入射する光を検出し、
前記第1の検出素子は、前記基板の裏面側から入射する光を検出し、
前記基板の裏面側から前記第2の検出素子に入射する光は、前記第2の電極によって遮られ、
前記基板の表面側から前記第1の検出素子に入射する光は、前記第2の電極によって遮られることを特徴とする光センサ。 - 請求項1において、
前記第1の電極及び前記第3の電極はそれぞれ、透光性を有する導電膜を有し、
前記第2の電極は、金属膜を有することを特徴とする光センサ。 - 透光性を有する基板上に、第1の検出素子と、第2の検出素子と、第3の検出素子とを有し、
前記第1の検出素子は、前記基板上の第1の電極と、前記第1の電極上の第1の半導体膜と、前記第1の半導体膜の一部の上に設けられ且つ遮光機能を有する第2の電極と、を有し、
前記第2の検出素子は、前記第1の電極と、前記第1の半導体膜及び前記第2の電極上の第2の半導体膜と、前記第2の半導体膜上の第3の電極と、を有し、
前記第3の検出素子は、前記第1の電極と、前記第1の電極上の第3の半導体膜と、前記第3の半導体膜上の第4の電極を有し、
前記第2の検出素子は、前記基板の表面側から入射する光を検出し、
前記第1の検出素子は、前記基板の裏面側から入射する光を検出し、
前記第3の検出素子は、前記基板の端面側から入射する光を検出し、
前記基板の裏面側から前記第2の検出素子に入射する光は、前記第2の電極によって遮られ、
前記基板の表面側から前記第1の検出素子に入射する光は、前記第2の電極によって遮られることを特徴とする光センサ。 - 請求項3において、
前記第1の電極及び前記第3の電極はそれぞれ、透光性を有する導電膜を有し、
前記第2の電極及び前記第4の電極はそれぞれ、金属膜を有することを特徴とする光センサ。 - 請求項2又は請求項4において、
前記透光性を有する導電膜は、酸化インジウム酸化スズ合金、酸化インジウム酸化亜鉛合金、又は酸化亜鉛を含むことを特徴とする光センサ。 - 請求項2、請求項4又は請求項5において、
前記金属膜は、金、銅、ニッケル、白金、又は銀の元素を含む膜を有することを特徴とする光センサ。 - 請求項1乃至請求項6のいずれか一において、
前記第1の半導体膜及び前記第2の半導体膜はそれぞれ、非晶質シリコン膜、PIN接合を有するシリコン膜、又は微結晶シリコン膜を有することを特徴とする光センサ。 - 請求項1乃至請求項7のいずれか一に記載の光センサを用いたことを特徴とする携帯通信機器。
- 請求項8において記載された携帯通信機器とは、携帯電話機、電子手帳、又はモバイルコンピュータであることを特徴とする携帯通信機器。
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Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7161185B2 (en) * | 2003-06-27 | 2007-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
US8681140B2 (en) | 2004-05-21 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus having the same |
US8059109B2 (en) * | 2005-05-20 | 2011-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus |
GB2431276B (en) * | 2005-10-14 | 2008-11-12 | Cambridge Display Tech Ltd | Display monitoring systems |
WO2007058183A1 (en) * | 2005-11-18 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
WO2007125932A1 (en) * | 2006-04-28 | 2007-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion element and manufacturing method of photoelectric conversion element |
US7847790B2 (en) * | 2006-08-30 | 2010-12-07 | Elan Home Systems | Interactive touchpad |
US7791012B2 (en) * | 2006-09-29 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes |
KR101365491B1 (ko) * | 2006-11-17 | 2014-02-24 | 삼성디스플레이 주식회사 | 디스플레이장치 |
DE602008005865D1 (de) * | 2008-05-29 | 2011-05-12 | Lg Electronics Inc | Transparente Anzeige und Betriebsverfahren dafür |
EP2129091A1 (en) * | 2008-05-29 | 2009-12-02 | LG Electronics Inc. | Mobile terminal and transparent display control method thereof |
KR101526970B1 (ko) * | 2008-05-29 | 2015-06-16 | 엘지전자 주식회사 | 단말기 및 그 제어 방법 |
EP2129090B1 (en) * | 2008-05-29 | 2016-06-15 | LG Electronics Inc. | Mobile terminal and display control method thereof |
KR101507797B1 (ko) * | 2008-05-29 | 2015-04-03 | 엘지전자 주식회사 | 단말기 및 그 제어 방법 |
EP2129084B1 (en) * | 2008-05-29 | 2010-11-24 | Lg Electronics Inc. | Transparent display and operation method thereof |
US8314859B2 (en) * | 2008-05-29 | 2012-11-20 | Lg Electronics Inc. | Mobile terminal and image capturing method thereof |
EP2128686B1 (en) * | 2008-05-29 | 2017-07-05 | LG Electronics Inc. | Mobile terminal with a solar cell module integrated under the display and method for controlling the display |
JP2010014827A (ja) * | 2008-07-02 | 2010-01-21 | Nec Saitama Ltd | 端末装置およびそのディスプレイのバックライト点灯方法 |
JP5756752B2 (ja) | 2008-07-03 | 2015-07-29 | セルカコール・ラボラトリーズ・インコーポレイテッドCercacor Laboratories, Inc. | センサ |
EP2159997A1 (en) * | 2008-09-02 | 2010-03-03 | Research In Motion Limited | Dual light sensors on a portable electronic device |
JP2010171617A (ja) | 2009-01-21 | 2010-08-05 | Nec Saitama Ltd | 折り畳み式電子機器の照度検出方法、折り畳み式電子機器及びプログラム |
EP2261996B8 (en) * | 2009-06-10 | 2011-10-19 | Suinno Solar Oy | High power solar cell |
KR101754382B1 (ko) * | 2010-03-11 | 2017-07-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP5635305B2 (ja) * | 2010-05-26 | 2014-12-03 | 任天堂株式会社 | 携帯型の情報処理装置、情報処理プログラムおよび情報処理方法 |
JP5436406B2 (ja) * | 2010-12-27 | 2014-03-05 | シャープ株式会社 | 画像形成装置、プログラムおよび記録媒体 |
EP2492905A1 (en) * | 2011-02-25 | 2012-08-29 | Research In Motion Limited | Display brightness adjustment |
CN103890947B (zh) | 2011-10-28 | 2017-04-12 | 株式会社半导体能源研究所 | 成像装置 |
CN104424912A (zh) * | 2013-08-22 | 2015-03-18 | 鸿富锦精密工业(武汉)有限公司 | 亮度调节电路 |
US20150132008A1 (en) * | 2013-11-11 | 2015-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via-less multi-layer integrated circuit with inter-layer interconnection |
WO2015125645A1 (ja) * | 2014-02-18 | 2015-08-27 | シャープ株式会社 | 携帯端末装置 |
JP2015223463A (ja) * | 2014-05-30 | 2015-12-14 | ソニー株式会社 | 照明装置、照明方法及び内視鏡 |
JP6394071B2 (ja) * | 2014-05-30 | 2018-09-26 | ソニー株式会社 | 照明装置、照明方法及び内視鏡 |
US10842367B2 (en) | 2014-05-30 | 2020-11-24 | Sony Corporation | Illumination apparatus, method and medical imaging system |
CN106486087B (zh) * | 2015-09-02 | 2020-04-24 | 深迪半导体(上海)有限公司 | 移动终端及其显示亮度的调节方法和调节装置 |
CN106657726B (zh) * | 2016-10-21 | 2019-10-18 | 维沃移动通信有限公司 | 一种摄像头模组的图像处理方法和移动终端 |
CN106657725B (zh) * | 2016-10-21 | 2019-10-18 | 维沃移动通信有限公司 | 一种摄像头模组的图像处理方法和移动终端 |
CN109872670B (zh) * | 2017-12-05 | 2021-11-05 | 京东方科技集团股份有限公司 | 显示屏、显示装置、显示电路及其亮度补偿方法 |
CN108833615B (zh) * | 2018-03-29 | 2020-08-21 | Oppo广东移动通信有限公司 | 电子装置 |
CN108962942B (zh) * | 2018-06-12 | 2021-01-26 | 信利半导体有限公司 | 一种自动调节亮度的pm-oled显示器及其制作方法 |
CN109961694B (zh) | 2019-02-28 | 2023-02-28 | 重庆京东方显示技术有限公司 | 一种柔性显示装置 |
EP3835890B1 (fr) | 2019-12-13 | 2022-06-15 | The Swatch Group Research and Development Ltd | Dispositif d'affichage digital comprenant deux cellules d'affichage superposees |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0348250A (ja) * | 1989-04-19 | 1991-03-01 | Nippon Zeon Co Ltd | ポジ型レジスト組成物 |
JPH05129646A (ja) * | 1991-11-07 | 1993-05-25 | Fujitsu Ltd | 赤外線検知素子及びその製造方法 |
JP2002502120A (ja) * | 1998-02-02 | 2002-01-22 | ユニアックス コーポレイション | 有機半導体製画像センサ |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4598305A (en) | 1984-06-18 | 1986-07-01 | Xerox Corporation | Depletion mode thin film semiconductor photodetectors |
JPS6175568A (ja) | 1985-09-06 | 1986-04-17 | Matsushita Electric Ind Co Ltd | 半導体素子の製造方法 |
JPH0348250U (ja) * | 1989-09-19 | 1991-05-08 | ||
JPH0690015A (ja) | 1992-09-08 | 1994-03-29 | Fuji Xerox Co Ltd | フォトダイオード及びその製造方法 |
WO1994011980A1 (en) | 1992-11-09 | 1994-05-26 | Patoroma Research Yugenkaisha | Portable communicator |
JP2752309B2 (ja) | 1993-01-19 | 1998-05-18 | 松下電器産業株式会社 | 表示装置 |
JPH06348952A (ja) * | 1993-06-11 | 1994-12-22 | Sanyo Electric Co Ltd | 位置決め装置 |
JPH0774691A (ja) | 1993-08-31 | 1995-03-17 | Sanyo Electric Co Ltd | 折畳機構付携帯電話機 |
US5703436A (en) * | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
US5760760A (en) * | 1995-07-17 | 1998-06-02 | Dell Usa, L.P. | Intelligent LCD brightness control system |
WO1997046000A1 (de) * | 1996-05-29 | 1997-12-04 | Deutsche Telekom Ag | Einrichtung zur eingabe von informationen |
JP2944582B2 (ja) * | 1997-06-25 | 1999-09-06 | 埼玉日本電気株式会社 | 折り畳み型携帯電話機 |
US6167110A (en) * | 1997-11-03 | 2000-12-26 | General Electric Company | High voltage x-ray and conventional radiography imaging apparatus and method |
US6352777B1 (en) * | 1998-08-19 | 2002-03-05 | The Trustees Of Princeton University | Organic photosensitive optoelectronic devices with transparent electrodes |
JP2000156522A (ja) | 1998-11-19 | 2000-06-06 | Canon Inc | 光電変換装置 |
JP4082547B2 (ja) | 1999-02-26 | 2008-04-30 | 矢崎総業株式会社 | 発光素子の電源供給制御装置 |
JP2001035652A (ja) * | 1999-07-21 | 2001-02-09 | Matsushita Electric Ind Co Ltd | エレクトロルミネッセンス素子及びこれを用いた照光ユニット |
US6392617B1 (en) | 1999-10-27 | 2002-05-21 | Agilent Technologies, Inc. | Active matrix light emitting diode display |
JP3337018B2 (ja) * | 1999-11-19 | 2002-10-21 | 株式会社村田製作所 | 積層コンデンサ、配線基板、デカップリング回路および高周波回路 |
TW480727B (en) | 2000-01-11 | 2002-03-21 | Semiconductor Energy Laboratro | Semiconductor display device |
DE10001955A1 (de) * | 2000-01-18 | 2001-07-19 | Gerd Reime | Opto-elektronischer Schalter |
JP2002072963A (ja) | 2000-06-12 | 2002-03-12 | Semiconductor Energy Lab Co Ltd | 発光モジュールおよびその駆動方法並びに光センサ |
US7030551B2 (en) | 2000-08-10 | 2006-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Area sensor and display apparatus provided with an area sensor |
JP3609698B2 (ja) | 2000-08-11 | 2005-01-12 | 三洋電機株式会社 | 折り畳み式通信端末機 |
JP3530475B2 (ja) | 2000-09-25 | 2004-05-24 | 三洋電機株式会社 | 折畳式通信端末装置および情報表示方法 |
JP2002111864A (ja) | 2000-10-03 | 2002-04-12 | Pioneer Electronic Corp | 照明制御機能を有する携帯情報端末装置 |
JP3392831B2 (ja) * | 2001-04-03 | 2003-03-31 | 三洋電機株式会社 | 折畳式通信端末装置および撮影制御方法 |
JP2002320012A (ja) | 2001-04-20 | 2002-10-31 | Nec Access Technica Ltd | 液晶ディスプレイ付き電子機器 |
DE10131608B4 (de) * | 2001-06-29 | 2004-02-05 | Forschungszentrum Jülich GmbH | Photosensor für ein Durchlichtverfahren zur Detektion der Bewegungsrichtung von Intensitätsmaxima und Intensitätsminima einer optischen stehenden Welle |
JP2003018267A (ja) | 2001-07-03 | 2003-01-17 | Mitsubishi Electric Corp | 携帯電話機 |
JP4304288B2 (ja) | 2001-07-17 | 2009-07-29 | 日本電気株式会社 | 移動電話機 |
JP3781652B2 (ja) | 2001-10-12 | 2006-05-31 | 埼玉日本電気株式会社 | 折り畳み式携帯電話機並びに折り畳み式携帯電話機のディスプレイ輝度調整方法及びプログラム |
JP3883854B2 (ja) | 2001-11-29 | 2007-02-21 | 株式会社半導体エネルギー研究所 | 表示装置、コンピュータ、ナビゲーションシステム、ゲーム機器、及び携帯情報端末 |
JP2003258975A (ja) * | 2002-02-27 | 2003-09-12 | Rohm Co Ltd | 携帯機器及び発光駆動ic並びに調整方法 |
JP4094386B2 (ja) | 2002-09-02 | 2008-06-04 | 株式会社半導体エネルギー研究所 | 電子回路装置 |
JP2004140472A (ja) | 2002-10-15 | 2004-05-13 | Nec Access Technica Ltd | 携帯端末装置 |
JP4283087B2 (ja) | 2002-10-30 | 2009-06-24 | 株式会社半導体エネルギー研究所 | 光電変換素子 |
-
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- 2004-03-17 CN CNB2004800081338A patent/CN100480649C/zh not_active Expired - Fee Related
- 2004-03-17 EP EP04721304A patent/EP1612526A4/en not_active Withdrawn
- 2004-03-17 WO PCT/JP2004/003544 patent/WO2004090487A1/ja active Application Filing
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0348250A (ja) * | 1989-04-19 | 1991-03-01 | Nippon Zeon Co Ltd | ポジ型レジスト組成物 |
JPH05129646A (ja) * | 1991-11-07 | 1993-05-25 | Fujitsu Ltd | 赤外線検知素子及びその製造方法 |
JP2002502120A (ja) * | 1998-02-02 | 2002-01-22 | ユニアックス コーポレイション | 有機半導体製画像センサ |
Also Published As
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JPWO2004090487A1 (ja) | 2006-07-06 |
CN100480649C (zh) | 2009-04-22 |
EP1612526A1 (en) | 2006-01-04 |
WO2004090487A1 (ja) | 2004-10-21 |
KR20050121218A (ko) | 2005-12-26 |
US20050030518A1 (en) | 2005-02-10 |
CN1764829A (zh) | 2006-04-26 |
EP1612526A4 (en) | 2012-11-21 |
KR101102370B1 (ko) | 2012-01-05 |
JP2010175549A (ja) | 2010-08-12 |
US20090309859A1 (en) | 2009-12-17 |
JP5137987B2 (ja) | 2013-02-06 |
US7652658B2 (en) | 2010-01-26 |
US9772221B2 (en) | 2017-09-26 |
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