JP4758000B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP4758000B2 JP4758000B2 JP2000362446A JP2000362446A JP4758000B2 JP 4758000 B2 JP4758000 B2 JP 4758000B2 JP 2000362446 A JP2000362446 A JP 2000362446A JP 2000362446 A JP2000362446 A JP 2000362446A JP 4758000 B2 JP4758000 B2 JP 4758000B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- crystal
- crystal growth
- thin film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 103
- 239000004065 semiconductor Substances 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000013078 crystal Substances 0.000 claims description 168
- 239000010408 film Substances 0.000 claims description 114
- 239000010409 thin film Substances 0.000 claims description 74
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 238000002425 crystallisation Methods 0.000 claims description 22
- 230000008025 crystallization Effects 0.000 claims description 22
- 230000005684 electric field Effects 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 82
- 239000010410 layer Substances 0.000 description 53
- 239000012535 impurity Substances 0.000 description 31
- 239000011159 matrix material Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 239000004973 liquid crystal related substance Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 239000011521 glass Substances 0.000 description 12
- 229910052698 phosphorus Inorganic materials 0.000 description 12
- 239000011574 phosphorus Substances 0.000 description 12
- 230000006911 nucleation Effects 0.000 description 10
- 238000010899 nucleation Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 229910005881 NiSi 2 Inorganic materials 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- 238000005452 bending Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 230000001737 promoting effect Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910005883 NiSi Inorganic materials 0.000 description 4
- 238000001994 activation Methods 0.000 description 4
- 238000005984 hydrogenation reaction Methods 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000001976 improved effect Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000002294 plasma sputter deposition Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000013598 vector Substances 0.000 description 2
- 229910012990 NiSi2 Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000362446A JP4758000B2 (ja) | 1999-11-30 | 2000-11-29 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33892999 | 1999-11-30 | ||
| JP1999338929 | 1999-11-30 | ||
| JP11-338929 | 1999-11-30 | ||
| JP2000362446A JP4758000B2 (ja) | 1999-11-30 | 2000-11-29 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001223166A JP2001223166A (ja) | 2001-08-17 |
| JP2001223166A5 JP2001223166A5 (https=) | 2008-01-24 |
| JP4758000B2 true JP4758000B2 (ja) | 2011-08-24 |
Family
ID=26576262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000362446A Expired - Fee Related JP4758000B2 (ja) | 1999-11-30 | 2000-11-29 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4758000B2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4149168B2 (ja) | 2001-11-09 | 2008-09-10 | 株式会社半導体エネルギー研究所 | 発光装置 |
| KR101050467B1 (ko) * | 2010-04-14 | 2011-07-20 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층, 그 제조방법, 상기 다결정 실리층을 이용한 박막 트랜지스터 및 상기 박막 트랜지스터를 구비한 유기발광표시장치 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02140915A (ja) * | 1988-11-22 | 1990-05-30 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPH03110825A (ja) * | 1989-09-26 | 1991-05-10 | Fujitsu Ltd | 半導体製造方法 |
| JPH05190570A (ja) * | 1992-01-17 | 1993-07-30 | Sanyo Electric Co Ltd | 薄膜トランジスタ及びその製造方法 |
| JP3919838B2 (ja) * | 1994-09-16 | 2007-05-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2000
- 2000-11-29 JP JP2000362446A patent/JP4758000B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001223166A (ja) | 2001-08-17 |
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