JP4754841B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4754841B2
JP4754841B2 JP2005034425A JP2005034425A JP4754841B2 JP 4754841 B2 JP4754841 B2 JP 4754841B2 JP 2005034425 A JP2005034425 A JP 2005034425A JP 2005034425 A JP2005034425 A JP 2005034425A JP 4754841 B2 JP4754841 B2 JP 4754841B2
Authority
JP
Japan
Prior art keywords
region
semiconductor
mask pattern
layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005034425A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005260216A5 (enrdf_load_stackoverflow
JP2005260216A (ja
Inventor
舜平 山崎
幸恵 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005034425A priority Critical patent/JP4754841B2/ja
Publication of JP2005260216A publication Critical patent/JP2005260216A/ja
Publication of JP2005260216A5 publication Critical patent/JP2005260216A5/ja
Application granted granted Critical
Publication of JP4754841B2 publication Critical patent/JP4754841B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2005034425A 2004-02-13 2005-02-10 半導体装置の作製方法 Expired - Fee Related JP4754841B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005034425A JP4754841B2 (ja) 2004-02-13 2005-02-10 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004037461 2004-02-13
JP2004037461 2004-02-13
JP2005034425A JP4754841B2 (ja) 2004-02-13 2005-02-10 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005260216A JP2005260216A (ja) 2005-09-22
JP2005260216A5 JP2005260216A5 (enrdf_load_stackoverflow) 2008-02-14
JP4754841B2 true JP4754841B2 (ja) 2011-08-24

Family

ID=35085599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005034425A Expired - Fee Related JP4754841B2 (ja) 2004-02-13 2005-02-10 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4754841B2 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101217182B1 (ko) * 2006-07-28 2012-12-31 삼성디스플레이 주식회사 박막 트랜지스터 기판, 이의 제조방법 및 이를 갖는표시패널
US7738050B2 (en) 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
GB2490165A (en) * 2011-04-21 2012-10-24 Cpi Innovation Services Ltd Organic thin film transistor with crystal grain variation compensated by shape of source and drain electrodes
JP5830930B2 (ja) * 2011-05-19 2015-12-09 ソニー株式会社 半導体素子および電子機器
WO2013042562A1 (en) * 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2786404A4 (en) * 2011-12-02 2015-07-15 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
US9490048B2 (en) * 2012-03-29 2016-11-08 Cam Holding Corporation Electrical contacts in layered structures
KR102140302B1 (ko) 2013-09-06 2020-08-03 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 유기 발광 표시 장치 제조용 포토 마스크
JPWO2019102788A1 (ja) * 2017-11-27 2020-10-01 東レ株式会社 半導体素子およびその製造方法、ならびに無線通信装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003318401A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイスの製造方法、デバイス、表示装置、および電子機器
JP4042098B2 (ja) * 2002-04-22 2008-02-06 セイコーエプソン株式会社 デバイスの製造方法

Also Published As

Publication number Publication date
JP2005260216A (ja) 2005-09-22

Similar Documents

Publication Publication Date Title
CN100565307C (zh) 半导体器件及其制备方法，液晶电视系统，和el电视系统
US7462514B2 (en) Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television
US7223641B2 (en) Semiconductor device, method for manufacturing the same, liquid crystal television and EL television
JP5292224B2 (ja) 膜パターンの作製方法
JP5364779B2 (ja) 半導体装置の作製方法
KR101058176B1 (ko) 박막 트랜지스터의 제조 방법
KR101114897B1 (ko) 반도체 장치, 텔레비전 세트 및 상기 제조 방법
JP4536601B2 (ja) 半導体装置の作製方法
JP5093985B2 (ja) 膜パターンの形成方法
US7416977B2 (en) Method for manufacturing display device, liquid crystal television, and EL television
JP4754848B2 (ja) 半導体装置の作製方法
US7531294B2 (en) Method for forming film pattern, method for manufacturing semiconductor device, liquid crystal television, and EL television
JP4939756B2 (ja) 半導体装置の作製方法
JP5025107B2 (ja) 半導体装置の作製方法
JP4754841B2 (ja) 半導体装置の作製方法
JP4932173B2 (ja) 膜パターンの形成方法
JP4877871B2 (ja) 表示装置の作製方法、液晶テレビジョン、及びｅｌテレビジョン
JP4785396B2 (ja) 半導体装置の作製方法
JP4713192B2 (ja) 薄膜トランジスタの作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071225

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071225

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110222

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110224

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110318

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110517

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110526

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140603

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140603

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees